CN102569331B - Negative feedback longitudinal integration white light-emitting diode without phosphor powder - Google Patents
Negative feedback longitudinal integration white light-emitting diode without phosphor powder Download PDFInfo
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- CN102569331B CN102569331B CN201110409964.8A CN201110409964A CN102569331B CN 102569331 B CN102569331 B CN 102569331B CN 201110409964 A CN201110409964 A CN 201110409964A CN 102569331 B CN102569331 B CN 102569331B
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Abstract
The invention provides a negative feedback longitudinal integration white light-emitting diode without phosphor powder, belonging to the technical field of semiconductor opto-electronics. The negative feedback longitudinal integration white light-emitting diode without the phosphor powder comprises a substrate 101, a metal bonded layer 102, a red light-emitting diode 103, a first transparent positive-temperature coefficient resistor 104, a green light-emitting diode 105, a second transparent positive-temperature coefficient resistor 106 and a blue light-emitting diode 107 which are longitudinally laminated in sequence. The negative feedback longitudinal integration white light-emitting diode without the phosphor powder can effectively reduce the complexity of a control circuit and ensure the service life of the diode.
Description
Technical field
The present invention relates to field of semiconductor photoelectron technique, relate in particular to a kind of negative feedback longitudinal integration white light-emitting diode without phosphor powder.
Background technology
At present in field of semiconductor photoelectron technique, the implementation that adopts semiconductor light-emitting-diode to realize white-light emitting mainly contains two kinds: a kind of is mode at semiconductor chip surface coating fluorescent powder, and a kind of is the mode that RGB mixed light is made into white-light emitting.First method is simple, cost is low, but owing to having Conversion of Energy and fluorescent material scattering, white light emitting diode energy loss prepared by common this mode reaches 10～30%, and be subject to the restriction in fluorescent material life-span, the life-span of semiconductor light-emitting-diode was reduced to less than 50,000 hours from 100,000 hours.Second method is owing to being all semi-conducting material, so efficiency is high, and the life-span is long, but LED prepared by this method is less because spectrum covers, and makes the color rendering index of device relatively low, and color changes with the variation of space angle.In order to obtain high color rendering index, need to apply again layer of fluorescent powder on RGB luminescent device surface, increase the coverage rate of spectrum, to improve color rendering index.Simultaneously, because red, green, blue color chip is respectively to adopt AlGaInP material system and AlGaInN material based material, the temperature coefficient of various materials is different, the chip color that makes three kinds of colors changes along with the variation of temperature or the variation of Injection Current size and time length, the color that the white chip that causes this kind of method to be prepared presents changes along with temperature or Injection Current size and time length, therefore control circuit is complicated, and cost is very high.
Therefore, instantly need the urgent technical problem solving to be exactly: how can propose a kind of effective measures, to solve problems of the prior art.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of negative feedback longitudinal integration white light-emitting diode without phosphor powder, when effectively reducing control circuit complexity, guarantees the useful life of diode.
In order to solve the problems of the technologies described above, the invention provides a kind of negative feedback longitudinal integration white light-emitting diode without phosphor powder, comprise successively longitudinally stacked substrate 101, metal bonding layer 102, the positive temperature coefficient resistor 104 that red light-emitting diode 103, first is transparent, the positive temperature coefficient resistor 106 that green light LED 105, second is transparent and blue light-emitting diode 107.
Further, positive temperature coefficient resistor 106 structures that described the first transparent positive temperature coefficient resistor 104 is transparent with second are identical, include positive temperature coefficient resistor and transparency conducting layer, tunnel cascade, Tunnel Regeneration or anti-tunnel cascade.
Further, the material forms of described positive temperature coefficient resistor is solid or liquid.
Further, described positive temperature coefficient resistor apply above transparency conducting layer, below or be blended in transparency conducting layer uniformly.
Further, transparency conducting layer is ITO slurry, PDOT or BCB.
Further, described red light-emitting diode, green light LED and blue light-emitting diode are one or more.
Further, the dominant wavelength of described red light-emitting diode, green light LED and blue light-emitting diode is output as one or more.
Further, described substrate is silicon or metal material.
Further, described green light LED is vertical stratification, adopts the mode of laser lift-off to obtain.
Further, described blue light-emitting diode is vertical stratification or mesa structure, and the vertical stratification of blue light emitting diode adopts the mode of laser lift-off to obtain, described blue light emitting diode.
To sum up, a kind of negative feedback longitudinal integration white light-emitting diode without phosphor powder provided by the invention, white light emitting diode internal series-connection positive temperature coefficient resistor, when any one light-emitting diode heating of RGB causes electric current to increase, the positive temperature coefficient resistor temperature simultaneously causing raises and causes resistance to increase, resistance increases and causes that dividing potential drop increases, make to drop to the current reduction on three kinds of light-emitting diodes of RGB, heating also reduces, device can return to normal operating conditions, has guaranteed the normal work of white light emitting diode by simple structure.
Accompanying drawing explanation
Fig. 1 is the structural representation of a kind of negative feedback longitudinal integration white light-emitting diode without phosphor powder described in the specific embodiment of the invention;
Fig. 2 (a) is red light-emitting diode epitaxial structure schematic diagram of the present invention;
Fig. 2 (b) is green light LED epitaxial structure schematic diagram of the present invention;
Fig. 2 (c) is blue light-emitting diode epitaxial structure schematic diagram of the present invention;
Fig. 2 (b) is upside-down mounting red light-emitting diode structural representation of the present invention;
Fig. 2 (e) is the upside-down mounting red light-emitting diode structural representation after the GaAs of removing substrate of the present invention and AlAs etch stop layer.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation.
With reference to Figure 1 shows that a kind of negative feedback longitudinal integration white light-emitting diode without phosphor powder, comprise successively longitudinally stacked substrate 101, metal bonding layer 102, the positive temperature coefficient resistor 104 that red light-emitting diode 103, first is transparent, the positive temperature coefficient resistor 106 that green light LED 105, second is transparent and blue light-emitting diode 107.
Positive temperature coefficient resistor 106 structures that concrete described the first transparent positive temperature coefficient resistor 104 is transparent with second are identical, include transparency conducting layer and positive temperature coefficient resistor.
Further, the material forms of described positive temperature coefficient resistor is solid or liquid, positive temperature coefficient resistor apply above transparency conducting layer, below or be blended in transparency conducting layer uniformly.Transparency conducting layer is ITO slurry, PDOT or BCB.
In concrete realization, described red light-emitting diode, green light LED and blue light-emitting diode are one or more, and dominant wavelength is output as one or more.In white light emitting diode, the wavelength of red light-emitting diode, green light LED and blue light-emitting diode reduces from bottom to top successively, and shortwave is upper, long wave under.
Substrate is silicon or metal material.Green light LED adopts the mode of laser lift-off to obtain, and it is vertical stratification.Blue light-emitting diode adopts the mode of laser lift-off to obtain, and it is vertical stratification or mesa structure.
When electric current is injected in (RGB) three light-emitting diodes, white light is sent in redgreenblue mixing.Because redgreenblue light-emitting diode is integrated in the vertical, three kinds of colors are inner directly mixes, so this structure devices is directly white light from the light of the outgoing of semiconductor surface, and color and angle have nothing to do.
Because the temperature characterisitic of three kinds of materials is inconsistent, the material of red light-emitting diode is more responsive to temperature, and because the radiator structure of three light-emitting diodes is different, best apart from the red light-emitting LED heat radiating condition that silicon substrate is near, radiating condition apart from silicon substrate blue light-emitting diode is farthest the poorest, when device heating, the wavelength of light-emitting diode, operating voltage etc. all can change.Wavelength shift, the parameters such as the colour temperature of whole device, color rendering index all change, and even become and be not white, device heating, operating voltage can reduce, and operating current can be increased, and electric current increase causes device heating more serious, forms vicious circle.
In scheme described in the present embodiment, white light emitting diode internal series-connection positive temperature coefficient resistor, any one the light-emitting diode heating of RGB in the present invention causes electric current to increase, the positive temperature coefficient resistor temperature simultaneously causing raises and causes resistance to increase, resistance increases and causes that dividing potential drop increases, make to drop to the current reduction on three kinds of light-emitting diodes of RGB, heating also reduces, and device can return to normal operating conditions.
Below in conjunction with concrete example, the negative feedback longitudinal integration white light-emitting diode without phosphor powder described in the present invention is described further, as shown in Figure 2, its preparation process and method are as follows:
By common MOVCD method at n
+epitaxial growth AlAs etch stop layer 32 successively on-GaAs substrate, N-shaped AlInP current-limiting layer 33, i type AlGaInP ruddiness active area 34, p-type AlInP current-limiting layer 35, and p-type GaP current extending 36, as shown in Fig. 2 (a).
Growing GaN resilient coating 62 successively in Sapphire Substrate 61, n-GaN current-limiting layer 63, InGaN green luminescence district 64, p-GaN current-limiting layer 65, as shown in Fig. 2 (b).
Growing GaN resilient coating 72 successively in Sapphire Substrate 61, n-GaN current-limiting layer 73, InGaN blue light emitting district 74, p-GaN current-limiting layer 75, as shown in Fig. 2 (c).
On the current extending 36 of structure p-type GaP shown in Fig. 2 (a) and Si substrate 11 respectively by the Au of 1 micron of evaporation or the method deposit of sputter, then two Au metal coverings are affixed to merge and compress, be put in the oxidation furnace that is connected with nitrogen, furnace body temperature is between 200 to 300 degrees Celsius, after about 30 to 60 minutes, from oxidation furnace, take out, two Au metal coverings are fused to one and become Au bonded layer 21, and form upside-down mounting red light-emitting diode structure shown in Fig. 2 (d);
By the method for mechanical lapping and wet etching, remove GaAs substrate 31 and AlAs etch stop layer 32, obtain the upside-down mounting red light-emitting diode structure shown in Fig. 2 (e);
On N-shaped AlInP current-limiting layer, revolve respectively way transparency conducting layer and positive temperature coefficient resistor, obtain (f);
Metal In in deposit on silicon substrate, and green light LED p-type GaN current-limiting layer 65 is bonded in metal In, by the mode of laser lift-off, GaN substrate is removed, obtain the green light LED structure that (g) removes Sapphire Substrate; Adopt in the same way, obtain the blue light-emitting diode structure that (h) removes Sapphire Substrate;
The surface of (f) of above-mentioned acquisition is scribbled to the upside-down mounting red light-emitting diode structure of transparency conducting layer and positive temperature coefficient resistor and the green light LED structural plane opposite bonding that removes Sapphire Substrate (g), put into baking oven 1 hour, then put into hydrochloric acid, In is eroded, silicon substrate 11 above In peels off thereupon simultaneously, the structure after acquisition (i) red light-emitting diode and green light LED are integrated; Same method, obtains (j) redgreenblue negative feedback Top-down design white light LED structure;
Respectively at sample upper and lower surface deposit Ti/Al/Ni/Au 108 and Al 109 as upper and lower metal electrode, scribing, pressure welding, obtains negative feedback longitudinal integration white light-emitting diode without phosphor powder structure of the present invention.
Above a kind of negative feedback longitudinal integration white light-emitting diode without phosphor powder provided by the present invention is described in detail, applied specific case herein principle of the present invention and execution mode are set forth, the explanation of above embodiment is just for helping to understand method of the present invention and core concept thereof; , for one of ordinary skill in the art, according to thought of the present invention, all will change in specific embodiments and applications, in sum, this description should not be construed as limitation of the present invention meanwhile.
Claims (9)
1. a negative feedback longitudinal integration white light-emitting diode without phosphor powder, it is characterized in that, comprise successively longitudinally stacked substrate (101), metal bonding layer (102), red light-emitting diode (103), the first transparent positive temperature coefficient resistor (104), green light LED (105), the second transparent positive temperature coefficient resistor (106) and blue light-emitting diode (107);
Positive temperature coefficient resistor (106) structure that described the first transparent positive temperature coefficient resistor (104) is transparent with second is identical, includes positive temperature coefficient resistor and transparency conducting layer.
2. white light emitting diode according to claim 1, is characterized in that, the material forms of described positive temperature coefficient resistor is solid or liquid.
3. white light emitting diode according to claim 1, is characterized in that, described positive temperature coefficient resistor is coated in top, the below of transparency conducting layer or is blended in transparency conducting layer uniformly.
4. white light emitting diode according to claim 1, is characterized in that, transparency conducting layer is ITO slurry.
5. white light emitting diode according to claim 1, is characterized in that, described red light-emitting diode, green light LED and blue light-emitting diode are one or more.
6. white light emitting diode according to claim 1, is characterized in that, the dominant wavelength of described red light-emitting diode, green light LED and blue light-emitting diode is output as one or more.
7. white light emitting diode according to claim 1, is characterized in that, described substrate is silicon or metal material.
8. white light emitting diode according to claim 1, is characterized in that, described green light LED is vertical stratification, adopts the mode of laser lift-off to obtain.
9. white light emitting diode according to claim 8, it is characterized in that, described blue light-emitting diode is vertical stratification or mesa structure, the vertical stratification of blue light emitting diode adopts the mode of laser lift-off to obtain, and the mesa structure of described blue light emitting diode adopts the mode of laser lift-off to obtain.
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| CN201110409964.8A CN102569331B (en) | 2011-12-09 | 2011-12-09 | Negative feedback longitudinal integration white light-emitting diode without phosphor powder |
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| CN102569331B true CN102569331B (en) | 2014-04-16 |
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| CN107219680A (en) * | 2017-05-22 | 2017-09-29 | 深圳市英唐光显技术有限公司 | Backlight module for LED liquid crystal display |
| TWI703722B (en) * | 2018-08-06 | 2020-09-01 | 友達光電股份有限公司 | Light emitting device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1490888A (en) * | 2003-09-17 | 2004-04-21 | �Ͼ���ҵ��ѧ | High-efficiency high-brightness multiple active district tunnel reclaimed white light light emitting diodes |
| CN201499349U (en) * | 2009-08-18 | 2010-06-02 | 重庆师范大学 | Mixing light control circuit of three-primary color LED |
| CN101964385A (en) * | 2010-10-28 | 2011-02-02 | 映瑞光电科技(上海)有限公司 | Light emitting diode and making method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2006054336A (en) * | 2004-08-12 | 2006-02-23 | Sanyo Electric Co Ltd | Light emitting element |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1490888A (en) * | 2003-09-17 | 2004-04-21 | �Ͼ���ҵ��ѧ | High-efficiency high-brightness multiple active district tunnel reclaimed white light light emitting diodes |
| CN201499349U (en) * | 2009-08-18 | 2010-06-02 | 重庆师范大学 | Mixing light control circuit of three-primary color LED |
| CN101964385A (en) * | 2010-10-28 | 2011-02-02 | 映瑞光电科技(上海)有限公司 | Light emitting diode and making method thereof |
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| JP特开2006-54336A 2006.02.23 |
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