CN207800632U - Dual-colored LED chip based on GaN material - Google Patents
Dual-colored LED chip based on GaN material Download PDFInfo
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- CN207800632U CN207800632U CN201721790917.1U CN201721790917U CN207800632U CN 207800632 U CN207800632 U CN 207800632U CN 201721790917 U CN201721790917 U CN 201721790917U CN 207800632 U CN207800632 U CN 207800632U
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Abstract
The utility model is related to a kind of dual-colored LED chip 10 based on GaN material, including：Substrate 11, GaN blue lights epitaxial layer 12, GaN purple lights epitaxial layer 13, separation layer 14, electrode 15, passivation layer 16 and reflective layer 17；Wherein, the GaN blue lights epitaxial layer 12, the GaN purple lights epitaxial layer 13 and the separation layer 14 may be contained within 11 upper surface of the substrate and the separation layer 14 is between the GaN blue lights epitaxial layer 12 and the GaN purple lights epitaxial layer 13；The electrode 15 is respectively arranged on the GaN blue lights epitaxial layer 12 and the GaN purple lights epitaxial layer 13；The passivation layer 16 is set to the GaN blue lights epitaxial layer 12,14 upper surface of the GaN purple lights epitaxial layer 13 and the separation layer；The reflective layer 17 is set to 11 lower surface of the substrate.The preparation method of dual-colored LED chip provided by the utility model based on GaN material, can generate the light of multiple color in single-chip, and the dosage of fluorescent powder is less；In addition, the preparation process is relatively easy, feasibility is high.
Description
Technical field
The utility model is related to semiconductor device design and manufacturing fields, more particularly to a kind of based on the double-colored of GaN material
LED chip.
Background technology
Due to having the characteristics that luminous efficiency is high, power consumption is small, service life is long and operating temperature is low, LED is more and more general
It is used in lighting area everywhere.LED is the light of a variety of colors that user's needs are sent out by luminescence chip cooperation fluorescent powder.
In the prior art, each individually luminescence chip can only send out monochromatic light, just be needed if the light of other colors need to be synthesized
The luminescence chip of different colours is mixed, and fills a large amount of fluorescent powder, thus there is poor reliability, encapsulation hardly possible
Spend big problem.Further, since there is the fluorescent powder grain of a large amount of discrete distributions in fluorescent powder glue-line, light is incident on fluorescent powder
It will appear strong scattering phenomenon in glue-line.On the one hand this scattering enhances absorption of the fluorescent powder glue-line to light, separately
On the one hand also cause a large amount of light to be reflected, i.e., can be substantially reduced transmitted through the light of phosphor powder layer.
Therefore, how to design a kind of novel LED chip just becomes of crucial importance.
Utility model content
To solve technological deficiency and deficiency of the existing technology, it is double based on GaN material that the utility model proposes a kind of
Color LED chip.The dual-colored LED chip 10 based on GaN material includes：Substrate 11, GaN blue lights epitaxial layer 12, GaN purple light extensions
Layer 13, separation layer 14, electrode 15, passivation layer 16 and reflective layer 17；Wherein,
The GaN blue lights epitaxial layer 12, the GaN purple lights epitaxial layer 13 and the separation layer 14 may be contained within the substrate
The 11 upper surfaces and separation layer 14 is between the GaN blue lights epitaxial layer 12 and the GaN purple lights epitaxial layer 13；
The electrode 15 is respectively arranged on the GaN blue lights epitaxial layer 12 and the GaN purple lights epitaxial layer 13；
The passivation layer 16 be set to the GaN blue lights epitaxial layer 12, the GaN purple lights epitaxial layer 13 and it is described every
14 upper surface of absciss layer；
The reflective layer 17 is set to 11 lower surface of the substrate.
In one embodiment of the utility model, the substrate 11 is Sapphire Substrate.
In one embodiment of the utility model, the GaN blue lights epitaxial layer 12 includes：First GaN buffer layers 121,
First GaN stabilized zones 122, the first n-type GaN layer 123, the first active layer 124, the first barrier layers 125 p-type AlGaN and the first p-type
GaN contact layers 126；Wherein,
The first GaN buffer layers 121, the first GaN stabilized zones 122, first n-type GaN layer 123, described
One active layer 124, the barrier layers the first p-type AlGaN 125 and the first p-type GaN contact layers 126 are stacked gradually in described
Specify region in 11 upper surface of substrate first.
In one embodiment of the utility model, first active layer 124 is InGaN Quantum Well 1241/GaN potential barriers
1242 multiplets.
Compared with prior art, the utility model has the advantages that：
1. can generate the light of multiple color in single-chip, the dosage of fluorescent powder is less；
2. by the way that blue light and ultraviolet light is integrated on the same chip, integrated level improves, and LED costs can decline；
3. due to being integrated with blue light and ultraviolet light on same chip, color temperature adjustment is more flexible.
Description of the drawings
Below in conjunction with attached drawing, specific embodiment of the present utility model is described in detail.
Fig. 1 is a kind of structural schematic diagram for dual-colored LED chip based on GaN material that the utility model embodiment provides；
Fig. 2 is a kind of structural schematic diagram for GaN blue lights epitaxial layer that the utility model embodiment provides；
Fig. 3 is a kind of structural schematic diagram for first active layer that the utility model embodiment provides；
Fig. 4 is a kind of structural schematic diagram for GaN purple lights epitaxial layer that the utility model embodiment provides；
Fig. 5 is a kind of structural schematic diagram for second active layer that the utility model embodiment provides；
Fig. 6 is a kind of structural schematic diagram for electrode that the utility model embodiment provides；
Fig. 7 a~Fig. 7 f are a kind of preparation method of dual-colored LED chip based on GaN material of the utility model embodiment
Schematic diagram；
Fig. 8 is the structural representation for another dual-colored LED chip based on GaN material that the utility model embodiment provides
Figure.
Specific implementation mode
Further detailed description, but the embodiment party of the utility model are done to the utility model with reference to specific embodiment
Formula is without being limited thereto.
Embodiment one
Fig. 1 is referred to, Fig. 1 is a kind of knot for dual-colored LED chip based on GaN material that the utility model embodiment provides
Structure schematic diagram, being somebody's turn to do the dual-colored LED chip 10 based on GaN material includes：Substrate 11, GaN blue lights epitaxial layer 12, GaN purple light extensions
Layer 13, separation layer 14, electrode 15, passivation layer 16 and reflective layer 17；Wherein,
The GaN blue lights epitaxial layer 12, the GaN purple lights epitaxial layer 13 and the separation layer 14 may be contained within the substrate
The 11 upper surfaces and separation layer 14 is between the GaN blue lights epitaxial layer 12 and the GaN purple lights epitaxial layer 13；
The electrode 15 is respectively arranged on the GaN blue lights epitaxial layer 12 and the GaN purple lights epitaxial layer 13；
The passivation layer 16 be set to the GaN blue lights epitaxial layer 12, the GaN purple lights epitaxial layer 13 and it is described every
14 upper surface of absciss layer；
The reflective layer 17 is set to 11 lower surface of the substrate.
Further, the substrate 11 is Sapphire Substrate.The crystal face of the Sapphire Substrate is (0001), and thickness is less than
150μm。
Further, on the basis of the above embodiments, Fig. 2 is referred to, Fig. 2 is one that the utility model embodiment provides
The structural schematic diagram of kind GaN blue light epitaxial layers, the GaN blue light epitaxial layers form blue light LED structure；Specifically, outside the GaN blue lights
Prolonging layer 12 includes：First GaN buffer layers 121, the first GaN stabilized zones 122, the first n-type GaN layer 123, the first active layer 124,
One barrier layers 125 p-type AlGaN and the first p-type GaN contact layers 126；
The first GaN buffer layers 121, the first GaN stabilized zones 122, first n-type GaN layer 123, described
One active layer 124, the barrier layers the first p-type AlGaN 125 and the first p-type GaN contact layers 126 are stacked gradually in described
Specify region in 11 upper surface of substrate first.
Wherein, the thickness of the first GaN buffer layers 121 is 3000~5000nm, preferably 4000nm；
The thickness of first GaN stabilized zones 122 is 500~1500nm, preferably 1000nm；
The thickness of first n-type GaN layer 123 is 200~1000nm, and preferably 400nm, doping concentration is 1 × 1018~5 ×
1019cm-3, preferably 1 × 1019cm-3；
Fig. 3 is referred to, Fig. 3 is a kind of structural schematic diagram for first active layer that the utility model embodiment provides；This
One active layer 124 is 1242 multiplet of InGaN Quantum Well 1241/GaN potential barriers, and the period of the multiplet is 8~30, preferably
It is 20；Wherein, the thickness of InGaN Quantum Well 1241 is 1.5~3.5nm, preferably 2.8nm；The thickness of GaN potential barriers 1242 is 5
~10nm, preferably 5nm；The content of InGaN Quantum Well 1241 and In in GaN potential barriers 1242 is fixed according to optical wavelength, and content is higher
Optical wavelength is longer, and usually 10~20%；
The thickness on the first barrier layers p-type AlGaN 125 is 10~40nm, preferably 20nm；
The thickness of first p-type GaN contact layers 126 is 100~300nm, preferably 200nm.
Further, on the basis of the above embodiments, Fig. 4 is referred to, Fig. 4 is one that the utility model embodiment provides
The structural schematic diagram of kind GaN purple light epitaxial layers, the GaN purple light epitaxial layers form purple LED structure；Specifically, outside the GaN purple lights
Prolonging layer 13 includes：2nd GaN buffer layers 131, the 2nd GaN stabilized zones 132, the second n-type GaN layer 133, the second active layer 134,
Two barrier layers 135 p-type AlGaN and the second p-type GaN contact layers 136；
The 2nd GaN buffer layers 131, the 2nd GaN stabilized zones 132, second n-type GaN layer 133, described
Two active layers 134, the barrier layers the second p-type AlGaN 135 and the second p-type GaN contact layers 136 are stacked gradually in described
Specify region in 11 upper surface of substrate second.
Wherein, the thickness of the 2nd GaN buffer layers 131 is 3000~5000nm, preferably 4000nm；
The thickness of 2nd GaN stabilized zones 132 is 500~1500nm, preferably 1000nm；
The thickness of second n-type GaN layer 133 is 200~1000nm, and preferably 400nm, doping concentration is 1 × 1018~5 ×
1019cm-3, preferably 1 × 1019cm-3；
Fig. 5 is referred to, Fig. 5 is a kind of structural schematic diagram for second active layer that the utility model embodiment provides；This
Two active layers 134 are Al1-xGaxN Quantum Well 1341/Al1-yGay1342 multiplet of N potential barriers, period of the multiplet is 8~
30, preferably 20；Wherein, Al1-xGaxThe thickness of N Quantum Well 1341 is 1.5~3.5nm, preferably 2.8nm；Al1-yGayN potential barriers
1342 5~10nm, preferably 5nm；Al1-xGaxN Quantum Well 1341 and Al1-yGayThe content of Al is according to light wave in N potential barriers 1342
Long fixed, content is higher, and optical wavelength is shorter, and usually 40~80%；
The thickness on the second barrier layers p-type AlGaN 135 is 10~40nm, preferably 20nm, and the wherein component ratio of Al is more than
70%；
The thickness of second p-type GaN contact layers 136 is 100~300nm, preferably 200nm.
Further, on the basis of the above embodiments, Fig. 6 is referred to, Fig. 6 is one that the utility model embodiment provides
The structural schematic diagram of kind electrode；The electrode 15 includes metal silicide 151 and metal 152；Wherein,
The metal silicide 151 is set to the GaN blue lights epitaxial layer 12 and 13 upper table of GaN purple lights epitaxial layer
Face；Specifically, metal silicide 151 is set to the first p-type GaN contact layers 126, the second p-type GaN contact layers 136, the first N-shaped
133 upper surface of GaN layer 123 and the second n-type GaN layer；
The metal 152 is set to 151 upper surface of the metal silicide；
Electrode structure, wherein metal silicide 151 and semi-conducting material is collectively formed with metal 152 in metal silicide 151
Contact berrier is small, forms Ohmic contact；
First p-type GaN contact layers 126 and 136 upper surface of the second p-type GaN contact layers are respectively blue-ray LED and purple LED
Anode；First n-type GaN layer 123 and the metal silicide 151 of 133 upper surface of the second n-type GaN layer are respectively formed with metal 152
The cathode of blue-ray LED and purple LED.
Further, on the basis of the above embodiments, 16 material of the passivation layer is silica.
Further, on the basis of the above embodiments, 17 material of the reflective layer is Al, Ti or Ni.
In practical applications, the quantity of blue-ray LED and purple LED can be decided according to the actual requirements.
Blue light provided in this embodiment and purple LED chip, by forming blue light and purple light on a single chip, it is possible to reduce
The dosage of fluorescent powder when later stage encapsulates；In addition, blue light and ultraviolet light is integrated on the same chip, integrated level improves, LED costs
It can decline, and color temperature adjustment is more flexible.
Embodiment two
It is a kind of based on the double-colored of GaN material of the utility model embodiment to please refer to Fig. 7 a~Fig. 7 f, Fig. 7 a~Fig. 7 f
The preparation method schematic diagram of LED chip.Specifically, which includes the following steps：
1st step chooses the Sapphire Substrate 700 that thickness is 4000nm, as shown in Figure 7a.
2nd step, at a temperature of 400~600 DEG C, 700 upper surface growth thickness of the Sapphire Substrate be 3000~
The first GaN buffer layers 701 of 5000nm；At a temperature of 900~1050 DEG C, grown in 701 upper surface of the first GaN buffer layers
Thickness is the first GaN stabilized zones 702 of 500~1500nm；At a temperature of 900~1050 DEG C, in the first GaN stabilized zones
702 upper surface growth thickness are 200~1000nm, doping concentration is 1 × 1018~5 × 1019cm-3The first n-type GaN layer 703；
In 703 upper surface of the first n-type GaN layer, growth InGaN Quantum Well/GaN potential barriers multiplet is as the first active layer 704；
Wherein, the growth temperature of the InGaN Quantum Well is 650~750 DEG C, and thickness is 1.5~3.5nm, the content of In is 10~
20%；The growth temperature of the GaN potential barriers is 750~850 DEG C, thickness is 5~10nm；InGaN Quantum Well/GaN the potential barriers
The period of multiplet is 20；At a temperature of 850~950 DEG C, first active layer, 104 upper surface growth thickness be 10~
The first barrier layers p-type AlGaN 705 of 40nm；At a temperature of 850~950 DEG C, on the barrier layers the first p-type AlGaN 705
Surface growth thickness is the first p-type GaN contact layers 706 of 100~300nm, as shown in Figure 7b.
3rd step, the 706 upper surface deposition thickness of the first p-type GaN contact layers be 300~800nm the first SiO2
Layer；Using wet-etching technology, selecting property etches the first SiO2Layer, in the first SiO2The first area to be etched is formed on floor
Domain；Using dry etch process, first p-type GaN contact layers 706, the first p described in the described first region etch to be etched
The barrier layers type AlGaN 705, first active layer 704, first n-type GaN layer 703, the first GaN stabilized zones 702 and
The first GaN buffer layers 101 form the first groove；Remove the first SiO2Layer, and deposit in first groove the
Two SiO2Layer；2nd SiO described in selective etch2Layer, to form SiO in the first groove surrounding2Separation layer 900, it is described
SiO2Separation layer interior zone is as the ultraviolet light wick slot, as shown in Figure 7 c.
4th step, at a temperature of 400~600 DEG C, the ultraviolet light wick trench bottom growth thickness be 3000~5000nm
The 2nd GaN buffer layers 801；At a temperature of 900~1050 DEG C, it is in 801 upper surface growth thickness of the 2nd GaN buffer layers
The 2nd GaN stabilized zones 802 of 500~1500nm；At a temperature of 900~1050 DEG C, in 802 upper table of the 2nd GaN stabilized zones
Face growth thickness is 200~1000nm, doping concentration is 1 × 1018~5 × 1019cm-3The second n-type GaN layer 803；Described
Second n-type GaN layer, 803 upper surface grows Al1-xGaxN Quantum Well/Al1-yGayN potential barriers multiplet as the second active layer 804,
X, y indicates the component ratio of tie substance；Wherein, Al1-xGaxThe growth temperature of N Quantum Well is 850~950 DEG C, and thickness is
The content of 1.5~3.5nm, Al are 10~50%；Al1-yGayThe growth temperature of N potential barriers be 750~900 DEG C, thickness be 5~
The content of 10nm, Al are 40~80%；The Al1-xGaxN Quantum Well/Al1-yGayThe period of N potential barrier multiplets is 20；
At a temperature of 850~950 DEG C, in the second p-type AlGaN resistances that second active layer, 804 upper surface growth thickness is 10~40nm
Barrier 805；At a temperature of 850~950 DEG C, the 805 upper surface growth thickness of the barrier layers the second p-type AlGaN be 100~
The second p-type GaN contact layers 806 of 300nm, as shown in figure 7d.
5th step, using pecvd process, in the first p-type GaN contact layers 706 and the second p-type GaN contact layers
806 upper surfaces deposit the 3rd SiO2Layer；Using wet-etching technology, the 3rd SiO described in selective etch2Layer, in the first p
Type GaN contact layers 706 are respectively formed the second region to be etched with 806 upper surface of the second p-type GaN contact layers and third is to be etched
Lose region；It is sequentially etched the first p-type GaN contact layers 706, the first p-type AlGaN resistances in the described second region to be etched
Barrier 705 and second active layer 704 are sequentially etched the second p-type GaN contact layers in third region to be etched
806, the barrier layers the second p-type AlGaN 805 and the Al1-xGaxN/Al1-yGayN active layers 804, with respectively described first
703 upper surface of n-type GaN layer forms the second groove, forms third groove in 803 upper surface of the second n-type GaN layer；Removal institute
State the 3rd SiO2Layer, in 706 upper surface of the first p-type GaN contact layers, 806 upper surface of the second p-type GaN contact layers, institute
The second bottom portion of groove and the third bottom portion of groove deposition thickness are stated as the 4th SiO of 300~800nm2Layer；Selective etch institute
State the 4th SiO2Layer, in 706 upper surface of the first p-type GaN contact layers, 806 upper surface of the second p-type GaN contact layers, institute
It states 703 upper surface of the first n-type GaN layer and 803 upper surface of the second n-type GaN layer and is respectively formed the first top electrode fairlead,
Two top electrode fairleads, first time electrode lead hole and second time electrode lead hole；In the first top electrode fairlead, described
Second top electrode fairlead, first time electrode lead hole and second time electrode lead hole bottom deposit Cr/Pt/Au materials
Material；Wherein, the thickness of Cr is 20~40nm, and the thickness of Pt is 20~40nm, and the thickness of Au is 800~1500nm；300~
To include the Cr/Pt/Au materials, the first p-type GaN contact layers 706, the second p-type GaN contacts at a temperature of 500 DEG C
The entire material of layer 806, first n-type GaN layer 703 and second n-type GaN layer 803 is made annealing treatment, with described
First p-type GaN contact layers 706, the second p-type GaN contact layers 806, first n-type GaN layer 703 and second N-shaped
GaN layer 803 forms metal silicide with Cr/Pt/Au materials interface；Remove the Cr/Pt/Au materials；Institute
State metallic compound surface deposition metal；Metal described in photoetching is to form the anode 31 and cathode 32, purple light chip of blue chip
Anode 31' and cathode 32', as shown in figure 7e.
6th step, the removal Sapphire Substrate base portion material so that the thickness of the saphire substrate material of remainder
Degree should be at 150 μm or less；The metallized reflective layer 920 in the Sapphire Substrate bottom, as depicted in fig. 7f.
Embodiment three
It is another dual-colored LED chip based on GaN material that the utility model embodiment provides to refer to figure Fig. 8, Fig. 8
Structural schematic diagram.The difference for the blue light and purple light chip that blue light provided in this embodiment is provided with purple light chip with embodiment two
It is that the first GaN buffer layers 101 do not etch away completely when preparing purple light wick slot, other techniques are identical.The advantages of structure
It is altogether to connect the cathode of blue-ray LED and purple LED, in follow-up be packaged, wiring is simpler.
It, cannot the above content is specific preferred embodiment further detailed description of the utility model is combined
Assert that the specific implementation of the utility model is confined to these explanations.For the ordinary skill of the utility model technical field
For personnel, without departing from the concept of the premise utility, a number of simple deductions or replacements can also be made, should all regard
To belong to the scope of protection of the utility model.
Claims (4)
1. a kind of dual-colored LED chip (10) based on GaN material, which is characterized in that including：Substrate (11), GaN blue light epitaxial layers
(12), GaN purple lights epitaxial layer (13), separation layer (14), electrode (15), passivation layer (16) and reflective layer (17)；Wherein,
The GaN blue lights epitaxial layer (12), the GaN purple lights epitaxial layer (13) and the separation layer (14) may be contained within the lining
Bottom (11) the upper surface and separation layer (14) is located at the GaN blue lights epitaxial layer (12) and the GaN purple lights epitaxial layer (13)
Between；
The electrode (15) is respectively arranged on the GaN blue lights epitaxial layer (12) and the GaN purple lights epitaxial layer (13)；
The passivation layer (16) is set to the GaN blue lights epitaxial layer (12), the GaN purple lights epitaxial layer (13) and the isolation
Layer (14) upper surface；
The reflective layer (17) is set to the substrate (11) lower surface.
2. LED chip (10) according to claim 1, which is characterized in that the substrate (11) is Sapphire Substrate.
3. LED chip (10) according to claim 1, which is characterized in that the GaN blue lights epitaxial layer (12) includes：The
One GaN buffer layers (121), the first GaN stabilized zones (122), the first n-type GaN layer (123), the first active layer (124), the first p-type
The barrier layers AlGaN (125) and the first p-type GaN contact layers (126)；Wherein,
It is the first GaN buffer layers (121), the first GaN stabilized zones (122), first n-type GaN layer (123), described
First active layer (124), the barrier layers the first p-type AlGaN (125) and the first p-type GaN contact layers (126) layer successively
It is laminated on the substrate (11) upper surface first and specifies region.
4. LED chip (10) according to claim 3, which is characterized in that first active layer (124) is InGaN amounts
Sub- trap (1241)/GaN potential barriers (1242) multiplet.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2021019075A (en) * | 2019-07-19 | 2021-02-15 | 日亜化学工業株式会社 | Manufacturing method of light-emitting device and the light-emitting device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2021019075A (en) * | 2019-07-19 | 2021-02-15 | 日亜化学工業株式会社 | Manufacturing method of light-emitting device and the light-emitting device |
| JP7323783B2 (en) | 2019-07-19 | 2023-08-09 | 日亜化学工業株式会社 | Light-emitting device manufacturing method and light-emitting device |
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