CN110459558A - A kind of display panel and preparation method thereof - Google Patents
A kind of display panel and preparation method thereof Download PDFInfo
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- CN110459558A CN110459558A CN201910770677.6A CN201910770677A CN110459558A CN 110459558 A CN110459558 A CN 110459558A CN 201910770677 A CN201910770677 A CN 201910770677A CN 110459558 A CN110459558 A CN 110459558A
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- 238000005516 engineering process Methods 0.000 abstract description 17
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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Abstract
The embodiment of the invention discloses a kind of display panels and preparation method thereof.Display panel includes: backboard and multiple first luminescent devices, multiple second luminescent devices and multiple third luminescent devices on the backboard, and first luminescent device, second luminescent device are different with the luminescent color of the third luminescent device；Along the direction perpendicular to the display panel, second luminescent device and first luminescent device are overlapping.According to the technical solution of the present invention, it in the case where display panel luminescent device size is minimum, is shown with lower technology difficulty, less processing step and higher production yield, the colorization for realizing display panel.
Description
Technical field
The present embodiments relate to field of display technology more particularly to a kind of display panel and preparation method thereof.
Background technique
The micro- aobvious technology of silicon substrate uses the display panel of the micro- aobvious technology of silicon substrate i.e. by display in conjunction with monocrystalline silicon integrated circuit
Having many advantages, such as display resolution, big, fast response time, brightness are high and low in energy consumption compared with high, visual angle, this makes the micro- aobvious skill of silicon substrate
Art is increasing picture display size and clarity, reduces System on Chip/SoC quantity to reduce the cost of system and the spatial volume of product
Aspect has broad application prospects, and the micro- aobvious technology of silicon substrate can be applied to military affairs, medicine, aerospace and E-consumer at present
Etc. every field.
However, the existing colorization for realizing silicon substrate micro display panel has that difficulty is larger and yield is lower, because
This mass production difficult to realize.
Summary of the invention
The embodiment of the present invention provides a kind of display panel and preparation method thereof, to realize the system for reducing display panel colorization
Make difficulty, promotes the yield of display panel.
To realize the above-mentioned technical purpose, the embodiment of the invention provides following technical solutions:
In a first aspect, the embodiment of the invention provides a kind of display panels, comprising:
Backboard and multiple first luminescent devices, multiple second luminescent devices and multiple thirds hair on the backboard
Optical device, first luminescent device, second luminescent device are different with the luminescent color of the third luminescent device；
Along the direction perpendicular to the display panel, second luminescent device and first luminescent device are overlapping.
Further, first luminescent device is blue luminescent device, and second luminescent device is green emitting device
Part, the third luminescent device are emitting red light device；
Alternatively, first luminescent device is green light emitting device, second luminescent device is blue luminescent device, institute
Stating third luminescent device is emitting red light device.
Realize the colorization of display panel.
Further, first luminescent device, second luminescent device and the third luminescent device include stacking
Cathode, epitaxial layer and the anode of setting.
Luminescent device uses vertical structure, so that the number of electrodes on the unit area of display panel greatly reduces, in turn
The size that luminescent device can be further decreased realizes high PPI.
Further, the anode of first luminescent device, the anode of second luminescent device and the third shine
The anode of device is respectively positioned on the light emitting functional layer adjacent to the side of the backboard, and the backboard includes multiple pixel driver electricity
Road, the anode of the anode of first luminescent device, the anode of second luminescent device and the third luminescent device with it is right
The pixel-driving circuit electrical connection answered；
First luminescent device, second luminescent device and the third luminescent device common cathode.
Cathode layer is set as common layer structure, can in side Direct precipitation cathode layer of the n type semiconductor layer far from backboard,
To simplify the manufacture craft of cathode, advantageously reduces cost of manufacture and improve the yield of display panel.
Further, the backboard includes multiple pixel-driving circuits, and the pixel-driving circuit is digital driver circuitry.
It avoids using analog signal existing for analog drive circuit is vulnerable to interference and grayscale value degree of regulation is low asks
Topic is conducive to reduce pixel-driving circuit occupied area, especially for silicon substrate micro display panel, is conducive to improve display panel
Resolution ratio.
Further, the cathode of second luminescent device is located at the epitaxial layer of second luminescent device far from the back
The side of plate, corresponding second luminescent device region, the cathode of second luminescent device and second photophore
The epitaxial layer of first luminescent device, the N-type in the epitaxial layer of second luminescent device are provided between the epitaxial layer of part
Semiconductor layer is electrically connected by the via hole of the epitaxial layer through first luminescent device with the cathode of second luminescent device.
The epitaxial layer of first luminescent device is by cathode layer short circuit, during display panel is normally shown, the first photophore
The epitaxial layer of the corresponding second luminescent device region of part does not shine, thus will not influence the second luminescent device luminescent color and
Light emission luminance.
Further, the cathode of the third luminescent device is located at the epitaxial layer of the third luminescent device far from the back
The side of plate, corresponding third luminescent device region, the cathode of the third luminescent device and the third photophore
Auxiliary bonded layer is provided between the epitaxial layer of part, the n type semiconductor layer in the epitaxial layer of the third luminescent device is by passing through
The via hole for wearing the auxiliary bonded layer is electrically connected with the cathode of the third luminescent device.
Be conducive to for third luminescent device being bonded on the first substrate.
Further, display panel further include: cover board, the cover board are located at first luminescent device, second hair
Optical device and the side of the third luminescent device far from the backboard, the cover board include multiple bulge-structures, the protrusion
Direction protrusion of the structure to the cover board far from the backboard.
It is larger to be conducive to the light angle for avoiding the first luminescent device, the second luminescent device and third luminescent device from issuing
When, total reflection occurs and cannot project, therefore, light out is increased the phenomenon that being totally reflected to avoid light using bulge-structure
Rate；And bulge-structure can by light project angle adjustment it is bigger, visual angle colour cast can be reduced, be conducive to user from
Multiple angle viewing display panels are without will affect display effect.
Second aspect, the embodiment of the invention also provides a kind of production method of display panel, the production method includes:
The first substrate is provided, the first luminescent device described in epitaxial growth and second photophore on first substrate
Part；
The second substrate is provided, the third luminescent device described in epitaxial growth on second substrate；
The third luminescent device is bonded on first substrate；
Second substrate is removed, and first luminescent device, second luminescent device and the third are shone
Device is bonded on the backboard；Wherein, along the direction perpendicular to the display panel, second luminescent device and described the
One luminescent device is overlapping.
Further, it is bonded by first luminescent device, second luminescent device and the third luminescent device
After on the backboard, further includes:
Remove first substrate；
Cover board is set to first luminescent device, second luminescent device and the third luminescent device far from institute
State the side of backboard；Wherein, the cover board includes multiple bulge-structures, and the bulge-structure is to the cover board far from the backboard
Direction protrusion.
The embodiment of the invention provides a kind of display panels and preparation method thereof, and it includes backboard and position that display panel, which is arranged,
In multiple first luminescent devices, multiple second luminescent devices and multiple third luminescent devices on backboard, and along perpendicular to display
The direction of panel, the second luminescent device and the first luminescent device are overlapping, and the embodiment of the present invention can be in display panel luminescent device
In the case that size is minimum, with lower technology difficulty, less processing step and higher production yield, display panel is realized
Colorization show.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of display panel provided in an embodiment of the present invention；
Fig. 2 is the structural schematic diagram of another display panel provided in an embodiment of the present invention；
Fig. 3 is the structural schematic diagram of another display panel provided in an embodiment of the present invention；
Fig. 4 is a kind of flow diagram of the production method of display panel provided in an embodiment of the present invention；
Fig. 5 to Figure 11 is the schematic diagram of the section structure of each step in corresponding diagram 4；
Figure 12 is the flow diagram of the production method of another display panel provided in an embodiment of the present invention；
Figure 13 is the schematic diagram of the section structure of S260 in corresponding diagram 12.
Specific embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining the present invention rather than limiting the invention.It also should be noted that in order to just
Only the parts related to the present invention are shown in description, attached drawing rather than entire infrastructure.
Fig. 1 is a kind of structural schematic diagram of display panel provided in an embodiment of the present invention.Referring to Fig. 1, the display panel packet
Include backboard 10 and multiple first luminescent devices 1, multiple second luminescent devices 2 and multiple third photophores on backboard 10
Part 3, the first luminescent device 1, the second luminescent device 2 are different with the luminescent color of third luminescent device 3.And along perpendicular to display surface
The direction of plate, the second luminescent device 2 and the first luminescent device 1 are overlapping.
Illustratively, it is blue luminescent device that the first luminescent device 1, which can be set, and the second luminescent device 2 is green emitting
Device, third luminescent device 3 are emitting red light device.Specifically, epitaxial growth it can go out the first photophore on the first substrate
Part 1, i.e. blue luminescent device, then in side epitaxial growth second luminescent device 2 of first luminescent device 1 far from the first substrate,
That is green light emitting device.Wherein, epitaxial growth goes out the first luminescent device 1 and refers on the first substrate, on the first substrate extension
Grow n type semiconductor layer (N-GaN), light emitting functional layer (InGaN blue light multiple quantum well layer) and p type semiconductor layer (P-GaN)；
Can epitaxial growth buffer on the first substrate, the material for constituting buffer layer for example can be AlN (aluminium nitride) or GaN (nitrogen
Change gallium), then epitaxial growth n type semiconductor layer (N-GaN), light emitting functional layer (InGaN blue light multiple quantum well layer) and P-type semiconductor
Layer (P-GaN).Epitaxial growth goes out the second luminescent device 2 and refers on the first luminescent device 1, and extension is raw on p type semiconductor layer
Long n type semiconductor layer (N-GaN), light emitting functional layer (InGaN green light multiple quantum well layer) and p type semiconductor layer (P-GaN).
Along the direction perpendicular to the first substrate, the second luminescent device 2 and the first luminescent device 1 are overlapping, refer to that first shines
Include the epitaxial layer 11 of n type semiconductor layer, light emitting functional layer and p type semiconductor layer in device 1, and is wrapped in the second luminescent device 2
The epitaxial layer 21 for including n type semiconductor layer, light emitting functional layer and p type semiconductor layer is overlapping.It shines to the first luminescent device 1 and second
Device 2 uses an etching technics, performs etching, can be formed to n type semiconductor layer, light emitting functional layer and p type semiconductor layer
The epitaxial layer 21 of the epitaxial layer 11 of first luminescent device 1 and the second luminescent device 2, and 11 He of epitaxial layer of the first luminescent device 1
The epitaxial layer 21 of second luminescent device 2 is overlapping, such as in 2 region of the second luminescent device, the epitaxial layer of the first luminescent device 1
11 and second luminescent device 2 epitaxial layer 21 it is overlapping.Epitaxial growth goes out third luminescent device 3 on the second substrate, i.e., red hair
Optical device, then using wafer bond techniques by third luminescent device 3, being bonded in epitaxial growth has the first luminescent device 1 and second
On first substrate of luminescent device 2.
Illustratively, display panel can be silicon substrate micro display panel, and luminescent device can be Micro LED, exist at present
When making silicon substrate micro display panel, if silicon substrate micro display panel includes the luminescent device of three kinds of colors, primary batch is needed
The luminescent device for shifting same color is just able to achieve the colorization of display panel using substrate desquamation three times and bonding techniques,
But the process of the welding of substrate desquamation and luminescent device and backboard to luminescent device can damage luminescent device, greatly drop
The low production yield of display panel.In addition, being directed to silicon substrate micro display panel, the size of luminescent device is minimum, so that photophore
Part realizes that the difficulty of the flip chip technologies of high alignment precision is very big, i.e. the contraposition difficulty of luminescent device is very big, further decreases
The production yield of display panel.
The embodiment of the present invention by be arranged display panel include backboard 10 and on backboard 10 multiple first shine
Device 1, multiple second luminescent devices 2 and multiple third luminescent devices 3, along the direction perpendicular to the first substrate, the second photophore
Part 2 and the first luminescent device 1 are overlapping, include at least it is following the utility model has the advantages that
In a first aspect, the embodiment of the present invention is without the biggish batch transfer techniques of technical difficulty, and without adopting respectively
With substrate desquamation three times and bonding techniques, it is only necessary to which three kinds of face of formation on the same substrate can be realized in a wafer bond techniques
The luminescent device of color.Therefore, the embodiment of the present invention reduces the probability of substrate desquamation technique and bonding technology damage luminescent device,
Improve the production yield of display panel.
Second aspect, relative to using aligning three times to the bonding of very small dimensions luminescent device, the embodiment of the present invention is only needed
Wafer bonding is carried out when shifting third luminescent device 3, can be carried out again after third luminescent device 3 is bonded to the first substrate
Make the processing steps such as electrode, the contraposition of wafer bond techniques require it is lower, it is easy to accomplish, especially for high-resolution display
Panel, such as silicon substrate micro display panel greatly reduce bonding contraposition difficulty when flood tide transfer, further improve display surface
The production yield of plate.
The third aspect, by being arranged along the direction perpendicular to the first substrate, the second luminescent device 2 and the first luminescent device 1
It is overlapping, can after one luminescent device 1 of growth regulation and the second luminescent device 2 again on the first substrate the first photophore 1 and
Second luminescent device 2 carries out the Patternized technique of full wafer, to advantageously reduce processing step.
Fourth aspect, the Manufacturing Techniques of display panel can be based on existing comparative maturity in the embodiment of the present invention
Processing technology complete, therefore the technical support and equipment guarantee of semiconductor technology can be obtained, to be conducive to improve yield,
Reduce the cost of manufacture of display panel.
5th aspect, the traditional technology that display panel realizes that colorization is shown is quantum dot color switch technology, i.e., in film layer
In doped with different colours quantum dot, and then realize colored display, but be directed to high-resolution display panel, such as silicon substrate
The size of micro display panel, luminescent device is minimum, is difficult with traditional quantum dot color switch technology and realizes that colorization is shown.This
Inventive embodiments can epitaxial growth the first luminescent device 1 and the second luminescent device 2 on the first substrate, it is outer on the second substrate
Prolong three luminescent device 3 of growth regulation, therefore the multiple quantum well layer that can use different colours makes different luminescent devices issue difference
The light of color, and then realize that display panel, such as the colorization of silicon substrate micro display panel are shown.
To sum up, the embodiment of the present invention can be in the case where display panel luminescent device size be minimum, with lower technique
Difficulty, less processing step and higher production yield realize that the colorization of display panel is shown.
Fig. 2 is the structural schematic diagram of another display panel provided in an embodiment of the present invention.Referring to fig. 2, in above-mentioned implementation
On the basis of example, optionally, the first luminescent device 1, the second luminescent device 2 and third luminescent device 3 include be stacked
Cathode, epitaxial layer and anode.
Specifically, the epitaxial layer 11 of the first luminescent device 1 includes p type semiconductor layer 111 combined with Figure 1 and Figure 2, shine function
Ergosphere 112 and n type semiconductor layer 113, the epitaxial layer 21 of the second luminescent device 2 include p type semiconductor layer 211, light emitting functional layer
212 and n type semiconductor layer 213, the epitaxial layer 31 of third luminescent device 3 includes p type semiconductor layer 311,312 and of light emitting functional layer
N type semiconductor layer 313.The cathode 15 and anode 12 of first luminescent device 1 are located at the two sides of light emitting functional layer 112, i.e., and
One luminescent device 1 is vertical structure, and the cathode 25 and anode 22 of the second luminescent device 2 are located at the two of light emitting functional layer 212
Side, i.e. the second luminescent device 2 are vertical structure, and the cathode 35 and anode 32 of third luminescent device 3 are located at light emitting functional layer
312 two sides, i.e. third luminescent device 3 are vertical structure.In this way, the same of light emitting functional layer is arranged in compared to cathode and anode
Side is conducive to avoid the cathode of each luminescent device and the electric pole short circuit of anode, and then can further decrease the ruler of luminescent device
It is very little, realize high PPI.
With continued reference to Fig. 2, on the basis of the above embodiments, optionally, backboard 10 includes multiple pixel-driving circuits 4,
Pixel-driving circuit 4 is digital driver circuitry.Digital driver circuitry is shone using digital signal driving luminescent device, passes through control
The fluorescent lifetime of luminescent device adjusts the light emission luminance of luminescent device, avoids using simulating letter existing for analog drive circuit
Number vulnerable to interference and the low problem of grayscale value degree of regulation, and digital driver circuitry does not include capacitance structure, is conducive to reduce
Pixel-driving circuit occupied area is conducive to the resolution ratio for improving display panel especially for silicon substrate micro display panel, and number is driven
Dynamic circuit for example can using SRAM (Static Random Access Memory, static random access memory) circuit with
Realize the active matrix driving of display panel.
With continued reference to Fig. 2, on the basis of the above embodiments, optionally, the cathode 25 of the second luminescent device 2 is located at second
The epitaxial layer 21 of luminescent device 2 corresponds to 2 region of the second luminescent device far from the side of backboard 10, the second luminescent device 2
The epitaxial layer 11 of the first luminescent device 1 is provided between cathode 25 and the epitaxial layer 21 of the second luminescent device 2；Second luminescent device
N type semiconductor layer 213 in 2 epitaxial layer 21 is shone by the via hole of the epitaxial layer 11 through the first luminescent device 1 and second
The cathode 25 of device 2 is electrically connected.
The epitaxial layer 11 that the first luminescent device 1 is arranged in the embodiment of the present invention is located at the cathode 25 and the of the second luminescent device 2
The reason of between the n type semiconductor layer 213 of two luminescent devices 2, is that epitaxial growth goes out the first luminescent device on the first substrate
1, then in side epitaxial growth second luminescent device 2 of first luminescent device 1 far from the first substrate, and along perpendicular to the first substrate
Direction, the second luminescent device 2 and the first luminescent device 1 are overlapping, then adopt to the first luminescent device 1 and the second luminescent device 2
With an etching technics, to reduce processing step.So form the epitaxial layer 11 and the second luminescent device 2 of the first luminescent device 1
Epitaxial layer 21, due to the epitaxial layer 11 of the first luminescent device 1 be located at the second luminescent device 2 epitaxial layer 21 and the first substrate it
Between, therefore the epitaxial layer 11 of the first luminescent device 1 is not etched away, and forms the epitaxial layer 11 and second of the first luminescent device 1
The overlapping situation of the epitaxial layer 21 of luminescent device 2.
The n type semiconductor layer 213 of second luminescent device 2 by through the first luminescent device 1 epitaxial layer 11 via hole with
The epitaxial layer 11 that the electrical connection of cathode 25, i.e. cathode 25 run through the first luminescent device 1, therefore, the epitaxial layer 11 of the first luminescent device 1
In n type semiconductor layer and p type semiconductor layer by the short circuit of cathode 25, during display panel is normally shown, the first photophore
The epitaxial layer 11 of corresponding second luminescent device, 2 region of part 1 does not shine, to will not influence shining for the second luminescent device 2
Color and light emission luminance.
With continued reference to Fig. 2, on the basis of the above embodiments, optionally, the cathode 5 of third luminescent device 3 is located at third
The epitaxial layer 31 of luminescent device 3 corresponds to 3 region of third luminescent device far from the side of backboard 10, third luminescent device 3
Auxiliary bonded layer 6 is provided between cathode 35 and the epitaxial layer 31 of third luminescent device 3；The epitaxial layer 31 of third luminescent device 3
In n type semiconductor layer 313 pass through through auxiliary bonded layer 6 via hole be electrically connected with the cathode 35 of third luminescent device 3.
Illustratively, auxiliary bonded layer 6 for example can be bonding dielectric, such as barium titanate, and auxiliary bonded layer 6 is conducive to
Third luminescent device 3 is bonded on the first substrate using wafer binding technology.N in the epitaxial layer 31 of third luminescent device 3
Type semiconductor layer 313 receives cathode signal by the cathode 35 of third luminescent device 3, and pixel-driving circuit 4 shines to third
Device 3 provides anode signal, is advantageously implemented the active matrix driving to third luminescent device 3.
Combined with Figure 1 and Figure 2, on the basis of the above embodiments, optionally, the anode 12, second of the first luminescent device 1 is sent out
The anode 22 of optical device 2 and the anode 32 of third luminescent device 3 are respectively positioned on light emitting functional layer adjacent to the side of backboard 10.Backboard 10
Including multiple pixel-driving circuits 4, the anode and third luminescent device 3 of the anode of the first luminescent device 1, the second luminescent device 2
Anode is electrically connected with corresponding pixel-driving circuit 4.First luminescent device 1, the second luminescent device 2 and third luminescent device 3 are total
With cathode 5.
Specifically, the anode 12 of the first luminescent device 1 is located at light emitting functional layer 112 adjacent to backboard 10 combined with Figure 1 and Figure 2,
Side, the anode 22 of the second luminescent device 2 is located at light emitting functional layer 212 adjacent to the side of backboard 10, third luminescent device 3
Anode 32 is located at light emitting functional layer 312 adjacent to the side of backboard 10.The anode 12 of first luminescent device 1, second luminescent device 2
The anode 32 of anode 22 and third luminescent device 3 is electrically connected with corresponding pixel-driving circuit 4 respectively.Pixel-driving circuit 4 to
First luminescent device 1, the second luminescent device 2 and third luminescent device 3 provide anode signal, are advantageously implemented to the first photophore
The active matrix driving of part 1, the second luminescent device 2 and third luminescent device 3.
The n type semiconductor layer 113 of first luminescent device 1, the n type semiconductor layer 213 of the second luminescent device 2 and third shine
313 common cathode 5 of n type semiconductor layer of device 3, the N of the first luminescent device 1, the second luminescent device 2 and third luminescent device 3
Type semiconductor layer receives common cathode signal by common cathode 5.The embodiment of the present invention is by setting common cathode 5 to altogether
Logical layer structure, and be located at side of the n type semiconductor layer far from backboard 10, so as in n type semiconductor layer far from backboard 10
Side Direct precipitation common cathode 5, to simplify the manufacture craft of common cathode, advantageously reduces cost of manufacture.Therefore, originally
Inventive embodiments realize the active matrix driving of luminescent device on the basis of ensuring low cost of manufacture and high yield.
It should be noted that schematically illustrating the first luminescent device 1 in the above embodiments is blue-light-emitting device
Part, the second luminescent device 2 are green light emitting device, and third luminescent device 3 is emitting red light device, not to limit of the invention
It is fixed.In other embodiments, it is green light emitting device that the first luminescent device 1, which can also be arranged, and the second luminescent device 2 is blue hair
Optical device, third luminescent device 3 are emitting red light device or other situations, can according to need progress in practical applications
Setting.Specifically, the luminescent device that can be grown on the same substrate be with the matched luminescent device of the substrate lattice, and with this
The luminescent device selection wafer bonding technique of substrate mismatch is formed over the substrate.The blue as provided by the embodiment of the present invention
Luminescent device and green light emitting device, can the epitaxial growth in the silicon-based substrate or Sapphire Substrate of crystal orientation (111),
And the epitaxial growth on GaAs (GaAs) substrate is needed for emitting red light device, therefore, select blue luminescent device and green
The epitaxial growth on the first substrate of color luminescent device, emitting red light device are formed on the first substrate using wafer bonding technique.
Fig. 3 is the structural schematic diagram of another display panel provided in an embodiment of the present invention.Referring to Fig. 3, in above-mentioned implementation
On the basis of example, optionally, display panel further includes cover board 7.Cover board 7 is located at the first luminescent device 1,2 and of the second luminescent device
Side of the third luminescent device 3 far from backboard 10；Cover board 7 includes multiple bulge-structures 71, and bulge-structure 71 is to far from backboard 10
Direction protrusion.Wherein, cover board 7 for example can be lens cover plate, and bulge-structure 71 is convex lens.Setting lid of the embodiment of the present invention
Plate 7 includes bulge-structure 71, is conducive to avoid the first luminescent device 1, the second luminescent device 2 and the sending of third luminescent device 3
When light angle is larger, total reflection occurs and cannot project, therefore, using bulge-structure 71, can be totally reflected to avoid light
Phenomenon increases light emission rate；And the bigger of the angle adjustment of light injection can be reduced visual angle color by bulge-structure 71
Partially, be conducive to user from multiple angles viewing display panel without will affect display effect.
The embodiment of the invention also provides a kind of production method of display panel, Fig. 4 is provided in an embodiment of the present invention one
The flow diagram of the production method of kind display panel, the production method are used to make the display panel of above-described embodiment, such as Fig. 4
Shown, the production method of display panel includes:
S110, the first substrate is provided, on the first substrate the first luminescent device of epitaxial growth and the second luminescent device；Its
In, along the direction perpendicular to the first substrate, the second luminescent device and the first luminescent device are overlapping.
In conjunction with Fig. 1-Fig. 3, Fig. 5, provide the first substrate 20, the first substrate 20 can with the silicon-based substrate of silicon substrate crystal orientation (111),
It is also possible to Sapphire Substrate.Illustratively, epitaxial growth the first luminescent device 1 and the second luminescent device on the first substrate 20
2 include, and using metallo-organic compound chemical gaseous phase deposition (MOCVD) technique, epitaxial growth first shines on the first substrate 20
Device 1 can reserve the bonding position of third luminescent device 1 in MOCVD using mask plate；Existed using same mask plate
The second luminescent device of epitaxial growth 2 on first luminescent device 1.
Wherein, the first luminescent device of epitaxial growth 1 specifically can be, successively the epitaxial growth buffer on the first substrate 20
(AlN or GaN), n type semiconductor layer (N-GaN), light emitting functional layer (InGaN blue light multiple quantum well layer) and p type semiconductor layer (P-
GaN).The second luminescent device of epitaxial growth 2 specifically can be, successively the epitaxial growth n type semiconductor layer on the first luminescent device 1
(N-GaN), light emitting functional layer (InGaN green light multiple quantum well layer) and p type semiconductor layer (P-GaN).Buffer layer can improve N-type
The lattice mismatch of semiconductor layer and the first substrate 20, and the P of the n type semiconductor layer of the second luminescent device 2 and the first luminescent device 1
Type semiconductor layer Lattice Matching, it is therefore not necessary in the n type semiconductor layer of the second luminescent device 2 and the p-type of the first luminescent device 1
Buffer layer is set between semiconductor layer.
S120, the second substrate, the epitaxial growth third luminescent device on the second substrate are provided.
In conjunction with Fig. 1-Fig. 3, Fig. 6, the second substrate 30 is provided, the second substrate 30 can be GaAs (GaAs).Illustratively,
Using metallo-organic compound chemical gaseous phase deposition (MOCVD) technique on the second substrate 30 epitaxial growth third luminescent device 3,
In MOCVD, the position of the first luminescent device 1 and the second luminescent device 2 can be reserved using mask plate.It can also be second
Whole face deposits third luminescent device 3 on substrate 30, then adds reserved first luminescent device 1 of etch process and the second hair using photoetching
The position of optical device 2.Epitaxial growth third luminescent device 3 specifically can be, and successively epitaxial growth buffers on the second substrate 30
Layer (GaLi), n type semiconductor layer (N-GaLi), light emitting functional layer (feux rouges multiple quantum well layer) and p type semiconductor layer (P-GaLi).
S130, third luminescent device is bonded on the first substrate.
In conjunction with Fig. 1-Fig. 3, Fig. 7, third luminescent device 3 is bonded on the first substrate 20.Illustratively, using wafer key
Closing (Wafer Bonding) technique has the second substrate 30 of third luminescent device 3 to be bonded with the first substrate 20 epitaxial growth.It can
Third luminescent device 3 can be bonded by selection of land using auxiliary bonded layer 6 with the first substrate 20 stabilization.Optionally, bonded layer is assisted
6 for example can be bonding dielectric, such as barium titanate.Then the second substrate 30 is gone using wet corrosion technique.
In conjunction with Fig. 1-Fig. 3, Fig. 7 and Fig. 8, the second luminescent device 2 and third luminescent device 3 far from the first substrate 20 one
Side coats photoresist；Photoresist is patterned using photoetching process；Using dry etch process or wet-etching technology patterning the
One luminescent device 1, the second luminescent device 2 and third luminescent device 3.
Specifically, the first luminescent device 1 includes the part film layer 14 in the region of corresponding second luminescent device 2, and corresponding
The part film layer 15 in the region of the first luminescent device 1, is etched between film layer 14 and film layer 15, and etching stopping is in the first substrate
20, to disconnect the electrical connection of the first luminescent device 1 and the second luminescent device 2.The embodiment of the present invention is by 3 key of third luminescent device
It is bonded to the processing step performed etching again after the first substrate, it is therefore possible to use contraposition requires low wafer bonding technique by the
One substrate 20 and the bonding of the second substrate 30, so that the technique requirement of the embodiment of the present invention is low, it is easy to accomplish.
In conjunction with Fig. 1-Fig. 3 Fig. 9, sun is deposited on the first luminescent device 1, the second luminescent device 2 and third luminescent device 3
Pole forms anode 12, the anode 22 of the second luminescent device 2 and the anode 32 of third luminescent device 3 of the first luminescent device 1.Tool
Body, the technique of deposition anode can be the techniques such as physical vapour deposition (PVD), thermal evaporation or magnetron sputtering.The material of anode is for example
It can be the metal materials such as chromium platinum.
Optionally, insulating layer can also be made before product anode.Referring to Figure 10, illustratively, in the first luminescent device
1, depositing insulating layer 8 on the second luminescent device 2 and third luminescent device 3, the technique of depositing insulating layer 8 for example can be MOCVD.
The material of insulating layer 8 for example can be silica.The setting of insulating layer 8, which can be played, protects luminescent device not corroded by water oxygen
Effect, and facilitate reduce luminescent device leakage current.
S140, backboard is provided；Wherein, backboard includes multiple pixel-driving circuits.
In conjunction with Fig. 1-Fig. 3, Figure 11, backboard 10 is provided, backboard 10 includes multiple pixel-driving circuits 4.Pixel-driving circuit 4
It can be non-capacitive digital driver circuitry, such as SRAM driving circuit, pixel-driving circuit 4 can be limited in silicon substrate backboard
Spatially complete.
S150, the second substrate of removal, and the first luminescent device, the second luminescent device and third luminescent device are bonded to back
On plate；Wherein, along the direction perpendicular to display panel, the second luminescent device and the first luminescent device are overlapping.
In conjunction with Fig. 1-Fig. 3, Figure 11, the first luminescent device 1,2 and of the second luminescent device on the first substrate 20 will be formed in
Third luminescent device 3 is bonded on backboard 10.The anode of first luminescent device 1, the second luminescent device 2 and third luminescent device 3
Light emitting functional layer is respectively positioned on adjacent to the side of backboard 10, anode is electrically connected with corresponding pixel-driving circuit 4.Illustratively, key
It closes technique and uses back bonding welding procedure, by the first luminescent device 1, the anode of the second luminescent device 2 and third luminescent device 3
With corresponding 4 para-linkage of pixel-driving circuit.Then the first substrate 20 is removed.If the first substrate 20 is Sapphire Substrate,
Sapphire Substrate can be removed using laser lift-off.If the first substrate 20 is silicon-based substrate, it can use wet etching will
Silicon-based substrate removal.Optionally, before removing the first substrate 20, bottom filler 9 can also be filled and solidify, to reinforce bonding
Intensity.
Manufacturing Techniques employed in the embodiment of the present invention can be based on the processing technology of existing comparative maturity
It completes, therefore the technical support and equipment guarantee of semiconductor technology can be obtained, to be conducive to improve yield, reduce cost.
Figure 12 is the flow diagram of the production method of another display panel provided in an embodiment of the present invention, referring to figure
12, on the basis of the above embodiments, optionally, the production method of display panel includes:
S210, the first substrate is provided, on the first substrate the first luminescent device of epitaxial growth and the second luminescent device.
S220, the second substrate, the epitaxial growth third luminescent device on the second substrate are provided.
S230, third luminescent device is bonded on the first substrate.
S240, backboard is provided, backboard includes multiple pixel-driving circuits.
S250, the second substrate of removal, and the first luminescent device, the second luminescent device and third luminescent device are bonded to back
On plate；Wherein, along the direction perpendicular to display panel, the second luminescent device and the first luminescent device are overlapping.
S260, the first substrate of removal.
Referring to Figure 13, the first substrate 20 is removed.
S270, cover board is set to one of the first luminescent device, the second luminescent device and third luminescent device far from backboard
Side；Wherein, cover board includes multiple bulge-structures, direction protrusion of the bulge-structure to cover board far from backboard.
Referring to Fig. 3, cover board 7 is set to the first luminescent device 1, the second luminescent device 2 and third luminescent device 3 far from back
The side of plate 10；Cover board 7 includes multiple bulge-structures 71, and bulge-structure 71 is raised to the direction far from backboard 10.Wherein, cover board
7 for example can be lens cover plate, and bulge-structure 71 is convex lens.
It includes bulge-structure 71 that cover board 7, which is arranged, in the embodiment of the present invention, is conducive to that the first luminescent device 1, second is avoided to shine
When the light angle that device 2 and third luminescent device 3 issue is larger, total reflection occurs and cannot project, therefore, is tied using protrusion
Structure 71 increases light emission rate the phenomenon that being totally reflected to avoid light；And the angle tune that bulge-structure 71 can project light
Whole is bigger, can reduce visual angle colour cast, is conducive to user from multiple angles and watches display panel without will affect display effect
Fruit.
On the basis of the various embodiments described above, optionally, in conjunction with Fig. 1-Fig. 3, in the first luminescent device 1, the second photophore
The n type semiconductor layer of part 2 and third luminescent device 3 forms common cathode 5 far from the side of backboard, and n type semiconductor layer is all connected with
To common cathode 5.
Illustratively, the etching vias on the first luminescent device 1, the second luminescent device 2 and third luminescent device 3, etching
Stop to n type semiconductor layer, then deposits common cathode 5, common cathode far from the side whole face of substrate 10 in n type semiconductor layer
5 material can be metal.
Luminescent device in the embodiment of the present invention is vertical structure, and light emitting functional layer is arranged in compared to cathode and anode
Ipsilateral, luminescent device is set as vertical structure, to be conducive to avoid the electric pole short circuit of cathode and anode, and then can be further
The size for reducing luminescent device, realizes high PPI.And the embodiment of the present invention is by setting common layer knot for common cathode 5
Structure, and it is located at side of the n type semiconductor layer far from backboard 10, so as to straight in side of the n type semiconductor layer far from backboard 10
It connects deposition common cathode 5 and advantageously reduces cost of manufacture to simplify the manufacture craft of cathode.
Note that the above is only a better embodiment of the present invention and the applied technical principle.It will be appreciated by those skilled in the art that
The invention is not limited to the specific embodiments described herein, be able to carry out for a person skilled in the art it is various it is apparent variation,
It readjusts and substitutes without departing from protection scope of the present invention.Therefore, although being carried out by above embodiments to the present invention
It is described in further detail, but the present invention is not limited to the above embodiments only, without departing from the inventive concept, also
It may include more other equivalent embodiments, and the scope of the invention is determined by the scope of the appended claims.
Claims (10)
1. a kind of display panel characterized by comprising
Backboard and multiple first luminescent devices, multiple second luminescent devices and multiple third photophores on the backboard
Part, first luminescent device, second luminescent device are different with the luminescent color of the third luminescent device；
Along the direction perpendicular to the display panel, second luminescent device and first luminescent device are overlapping.
2. display panel according to claim 1, which is characterized in that first luminescent device is blue luminescent device,
Second luminescent device is green light emitting device, and the third luminescent device is emitting red light device；
Alternatively, first luminescent device is green light emitting device, second luminescent device is blue luminescent device, described the
Three luminescent devices are emitting red light device.
3. display panel according to claim 1, which is characterized in that first luminescent device, second photophore
Part and the third luminescent device include the cathode, epitaxial layer and anode being stacked.
4. display panel according to claim 3, which is characterized in that the anode of first luminescent device, described second
The anode of the anode of luminescent device and the third luminescent device is respectively positioned on the light emitting functional layer of the epitaxial layer adjacent to the back
The side of plate, the backboard include multiple pixel-driving circuits, the anode of first luminescent device, second luminescent device
Anode and the anode of the third luminescent device be electrically connected with the corresponding pixel-driving circuit；
First luminescent device, second luminescent device and the third luminescent device common cathode.
5. display panel according to claim 1-4, which is characterized in that the backboard includes multiple pixel drivers
Circuit, the pixel-driving circuit are digital driver circuitry.
6. display panel according to claim 3, which is characterized in that the cathode of second luminescent device is located at described the
Side of the epitaxial layer of two luminescent devices far from the backboard, corresponding second luminescent device region, second hair
The epitaxial layer of first luminescent device is provided between the cathode of optical device and the epitaxial layer of second luminescent device, it is described
Via hole and institute of the n type semiconductor layer by the epitaxial layer through first luminescent device in the epitaxial layer of second luminescent device
State the cathode electrical connection of the second luminescent device.
7. display panel according to claim 3, which is characterized in that the cathode of the third luminescent device is located at described the
Side of the epitaxial layer of three luminescent devices far from the backboard, corresponding third luminescent device region, the third hair
Auxiliary bonded layer is provided between the cathode of optical device and the epitaxial layer of the third luminescent device, the third luminescent device
N type semiconductor layer in epitaxial layer is electrically connected by the cathode of via hole and the third luminescent device through the auxiliary bonded layer
It connects.
8. -4, the described in any item display panels of 6-7 according to claim 1, which is characterized in that further include:
Cover board, it is separate that the cover board is located at first luminescent device, second luminescent device and the third luminescent device
The side of the backboard, the cover board include multiple bulge-structures, and the bulge-structure is to the cover board far from the backboard
Direction protrusion.
9. a kind of production method of display panel characterized by comprising
The first substrate is provided, the first luminescent device of epitaxial growth and the second luminescent device on first substrate；
The second substrate is provided, the epitaxial growth third luminescent device on second substrate；
The third luminescent device is bonded on first substrate；
Backboard is provided；Wherein, the backboard includes multiple pixel-driving circuits；
Remove second substrate, and by first luminescent device, second luminescent device and the third luminescent device
It is bonded on the backboard；Wherein, along the direction perpendicular to the display panel, second luminescent device and first hair
Optical device is overlapping.
10. the production method of display panel according to claim 9, which is characterized in that by first luminescent device,
After second luminescent device and the third luminescent device are bonded on the backboard, further includes:
Remove first substrate；
Cover board is set to first luminescent device, second luminescent device and the third luminescent device far from the back
The side of plate；Wherein, the cover board includes multiple bulge-structures, side of the bulge-structure to the cover board far from the backboard
To protrusion.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
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| CN201910770677.6A CN110459558B (en) | 2019-08-20 | 2019-08-20 | Display panel and manufacturing method thereof |
| KR1020227001266A KR20220020375A (en) | 2019-08-20 | 2020-04-22 | Display panel and manufacturing method thereof |
| PCT/CN2020/086009 WO2021031595A1 (en) | 2019-08-20 | 2020-04-22 | Display panel and manufacturing method thereof |
| TW109114067A TWI726699B (en) | 2019-08-20 | 2020-04-27 | Display panel and manufacturing method thereof |
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| CN201910770677.6A CN110459558B (en) | 2019-08-20 | 2019-08-20 | Display panel and manufacturing method thereof |
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| CN110459558B CN110459558B (en) | 2021-01-15 |
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| KR (1) | KR20220020375A (en) |
| CN (1) | CN110459558B (en) |
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| CN115863497A (en) * | 2023-02-20 | 2023-03-28 | 镭昱光电科技(苏州)有限公司 | MicroLED display device and preparation method thereof |
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| TWI726699B (en) | 2021-05-01 |
| TW202034297A (en) | 2020-09-16 |
| CN110459558B (en) | 2021-01-15 |
| KR20220020375A (en) | 2022-02-18 |
| WO2021031595A1 (en) | 2021-02-25 |
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