CN109979969A - The method of miniscope and manufacture miniscope - Google Patents
The method of miniscope and manufacture miniscope Download PDFInfo
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- CN109979969A CN109979969A CN201811555186.1A CN201811555186A CN109979969A CN 109979969 A CN109979969 A CN 109979969A CN 201811555186 A CN201811555186 A CN 201811555186A CN 109979969 A CN109979969 A CN 109979969A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/50—OLEDs integrated with light modulating elements, e.g. with electrochromic elements, photochromic elements or liquid crystal elements
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- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The method of miniscope and manufacture miniscope.This disclosure relates to the high aperture ratio miniscope with micro-cavity structure.Micro- phenotype shows that device includes substrate, unit pixel, driving element and Organic Light Emitting Diode.Organic Light Emitting Diode respectively includes anode, organic luminous layer and cathode.Reflecting electrode, the first dielectric layer, the second dielectric layer and transparent electrode are stacked by sequence to form anode.Organic luminous layer is stacked on anode.Cathode stack is on organic luminous layer.First dielectric layer and the second dielectric layer have contact portion, which makes at least one corner openings of reflecting electrode.Anode is connected to reflecting electrode by contact portion.
Description
Technical field
This disclosure relates to a kind of high aperture ratio miniscope with micro-cavity structure, and more specifically, the disclosure
It is related to a kind of miniature organic light emitting diode display of the high aperture ratio with micro-cavity structure, for realizing virtual reality
High brightness is provided in personal immersion equipment.
Background technique
Virtual reality refer to user by using stereoscopic imaging technology feel they really specific environment there and/
Or situation.Virtual reality is being developed, to provide the sense of hearing, tactile and visual cues by all human sensories, so that user feels
Feel that they are in the environment of real world.The virtual reality device of Integrated Virtual reality technology for military, building, tourism,
Film, multimedia, game etc..
A type of augmented reality as virtual reality is such a computer graphics techniques: by real world ring
Border is combined with virtual objects or information, them is made to look like the object of real world.For augmented reality, user wears saturating
Bright glasses, and see by the glasses environment of virtual objects and video and real world.
Personal immersion equipment is to enhance sinking for the individual consumer for experiencing reality environment using virtual reality technology
Soak the equipment of sense.Specifically, for this purpose, the display for maximizing visual immersion is considered most important.It is heavy in individual
The example of typical displays used in immersion equipment may include HMD (head-mounted display), FMD (face installation display
Device), EGD (glasses type displayer) etc..The display of personal immersion equipment can referred to as " personal immersion display ".
Because user must be worn as glasses it, it is desirable to personal immersion display sizes are small and light-weight.
That is, in order to realize personal immersion display, it is very small and there is high-resolution and high aperture to develop a kind of size
The miniscope of ratio is critically important.
Summary of the invention
The disclosure is directed to overcome the above problem and complete, and an aspect of this disclosure is to provide a kind of realization
The personal immersion miniscope of the highest possible sense of reality.Another aspect of the present disclosure is to provide one kind due to its high-resolution
Rate and high brightness characteristic realize highest possible sense of reality individual's immersion miniscope.The another aspect of the disclosure is to provide
Such a individual's immersion miniscope, the miniscope is by including micro-cavity structure and maximizing light emitting region come really
Protect high-resolution and high brightness characteristic.
The illustrative embodiments of the disclosure provide a kind of miniscope, and the miniscope includes: multiple lists
Position pixel, is arranged on substrate in the matrix form；Driving element is placed in the unit pixel；And organic hair
Optical diode is disposed respectively in the unit pixel and is connected to the driving element；Wherein, the organic light emission
Diode respectively includes: anode, stacked gradually in the anode reflecting electrode, the first dielectric layer, the second dielectric layer and thoroughly
Prescribed electrode；The dyke at the edge of the anode is covered, the dyke is located on second dielectric layer；Organic luminous layer, heap
It is stacked in above the anode；And cathode, it is stacked on above the organic luminous layer, wherein first dielectric layer and institute
Stating the second dielectric layer has the contact portion so that at least one corner openings in the reflecting electrode, and is connect by described
The anode is connected to the reflecting electrode by contact portion point.
In this embodiment, the miniscope further includes the dyke for covering the edge of the anode, the dyke
On second dielectric layer, wherein each of described unit pixel includes the first sub-pixel, the second sub-pixel and the
Three sub-pixels, and wherein, in first sub-pixel, first dielectric layer and second dielectric layer stack are described
In the whole surface of reflecting electrode, and the contact portion is placed below the dyke.
In this embodiment, in second sub-pixel, first dielectric layer stack is in the reflecting electrode
In whole surface, second dielectric layer is only stacked on the edge of first dielectric layer, and the contact portion and institute
The second dielectric layer is stated to be placed below the dyke.
In this embodiment, in second sub-pixel, only first dielectric layer stack is in the reflecting electrode
Whole surface on, and the contact portion is placed below the dyke.
In this embodiment, in the third sub-pixel, first dielectric layer and second dielectric layer only by
It is placed below the dyke corresponding with the edge of the reflecting electrode, and the reflecting electrode is surrounded by the dyke
Interior zone directly carry out surface with the transparent electrode and contact.
In this embodiment, in the third sub-pixel, first dielectric layer and second dielectric is not present
Layer, and the transparent electrode is stacked on above the whole surface of the reflecting electrode.
In this embodiment, the cathode of first sub-pixel and reflecting electrode first distance spaced apart, described first
Distance is corresponding with the sum of the thickness of the organic luminous layer, first dielectric layer and second dielectric layer, second son
The cathode and reflecting electrode of pixel are spaced apart second distance, the second distance and the organic luminous layer and first dielectric
The sum of thickness of layer is corresponding, and the cathode of the third sub-pixel and reflecting electrode are spaced apart third distance, the third away from
From corresponding with the thickness of the organic luminous layer.
In this embodiment, each of described unit pixel includes multiple sub-pixels, and the miniature display
Device further includes groove, and the groove is formed with continuous net-shaped pattern between the multiple sub-pixel and makes the sub-pixel point
From.
In this embodiment, the miniscope further include: cover the first planarization film of the driving element, institute
The first planarization film is stated to be located above the substrate；And second planarization film, second planarization film are stacked on described
Above one planarization film, wherein the groove includes: the first groove being formed in first planarization film；And it is described
Second groove in second planarization film, the second groove and first planarization film are overlapping and size is less than the first ditch
The size of slot.
In this embodiment, the reflecting electrode is formed by following manner: is being formed with the first groove and institute
The whole surface disposed thereon reflecting electrode material for stating second groove, according to the shape of the first groove and the second groove
The reflecting electrode material is divided into each section for each sub-pixel by shape.
In this embodiment, the transparent electrode is formed by following manner: is being formed with first dielectric layer, institute
It states and deposits transparent electrode material in the whole surface of the second dielectric layer and the first groove and the second groove, with described
The transparent electrode material is divided into for each of each sub-pixel according to the shape of first groove and the second groove
In section.
In this embodiment, the miniscope further includes pixel contact hole, and the pixel contact hole is formed in institute
It states in the first planarization film and second planarization film and there is the positive cone for exposing the part of the driving element
Shape, wherein the reflecting electrode is contacted via the pixel contact hole with the driving element.
Present disclose provides it is a kind of manufacture include Organic Light Emitting Diode miniscope method, the method includes
Following steps: driving element is formed on substrate；It is applied above the whole surface for the substrate for being formed with the driving element
Cover the first planarization film；The second planarization film is coated above first planarization film；Being formed has from the top at its edge
The groove of protrusion outstanding, to limit sub-pixel between first planarization film and second planarization film；It is logical
It crosses and is forming fluted whole surface disposed thereon metal material formation reflecting electrode, so that the reflecting electrode has by institute
State the shape of the sub-pixel of groove division；The first dielectric layer and the second dielectric layer are formed with the turning of the exposure reflecting electrode
Part, first dielectric layer and second dielectric layer are sequentially stacked on the surface of the reflecting electrode；And by
The whole surface disposed thereon transparent conductive material for being formed with first dielectric layer and second dielectric layer forms transparent electricity
Pole, so that the transparent electrode has the shape of the sub-pixel divided by the groove.
Present disclose provides a kind of personal immersion display with micro-cavity structure.Specifically, present disclose provides one
Kind ensures the personal immersion miniscope of high-resolution and high brightness characteristic.According to the miniscope of the disclosure pass through by
Micro-cavity structure is applied to each sub-pixel to maximize the light quantity in particular range of wavelengths, to realize high brightness.In addition, according to
The miniscope of the disclosure can maximize light emitting region, because the transparent electrode of anode and reflecting electrode are in subpixel area
Corner be in contact with each other.In addition, dyke is formed as covering area as small as possible on the edge of anode for including contact portion
Domain, to maximize light emitting region.Miniscope region can realize high aperture ratio and high brightness characteristic with ultrahigh resolution.
Detailed description of the invention
Attached drawing is included to provide a further understanding of the present invention, and is incorporated into and constitutes part of this application,
Attached drawing instantiates embodiment of the present disclosure, and together with specification for explaining the principles of this disclosure.
In the accompanying drawings:
Fig. 1 be according to the disclosure include miniscope and imaging len augmented reality equipment schematic diagram；
Fig. 2 is the enlarged plan for showing the structure of miniscope of the first illustrative embodiments according to the disclosure
Figure；
Fig. 3 is to show the structure of the miniscope of the first illustrative embodiments according to the disclosure along the line of Fig. 2
The sectional view of I-I' interception；
Fig. 4 A is the amplification view for showing the first sub-pixel structure of the miniscope according to the disclosure；
Fig. 4 B is to show the first sub-pixel structure of miniscope according to the present invention to cut along the line II-II' of Fig. 4 A
The amplification sectional view taken；
Fig. 5 A is the amplification view for showing the second sub-pixel structure of the miniscope according to the disclosure；
Fig. 5 B is the line III-III' shown according to the second sub-pixel structure of the miniscope of the disclosure along Fig. 5 A
The amplification sectional view of interception；
Fig. 6 A is the amplification view for showing the third sub-pixel structure according to the miniscope of the disclosure；
Fig. 6 B is to show to be cut according to the third sub-pixel structure of the miniscope of the disclosure along the line IV-IV' of Fig. 6 A
The amplification sectional view taken；
Fig. 7 is the enlarged plan for showing the structure of miniscope of the second illustrative embodiments according to the disclosure
Figure；
Fig. 8 A to Fig. 8 G is to show manufacture according to the method for the miniscope of the second illustrative embodiments of the disclosure
Amplification sectional view；With
Fig. 9 A and Fig. 9 B are the systems of the groove in the miniscope shown according to the second illustrative embodiments of the disclosure
Make the amplification sectional view of method.
Specific embodiment
By referring to the features as discussed above of illustrative embodiments, each of the disclosure can be more easily to understand
A aspect and feature and the method for realizing them.However, the disclosure can be embodied in many different forms, and should not
It is construed as limited to the illustrative embodiments illustrated here.On the contrary, providing these illustrative embodiments is to make this public affairs
It will be thorough and complete for opening, and the concept of the disclosure is fully conveyed to those skilled in the art, and the disclosure is by appended power
Benefit requires to limit.
Shape, size, ratio, the angle, number for the illustrative embodiments for describing the disclosure being shown in the accompanying drawings
Amount etc. be only example, however it is not limited to it is shown in the drawings those.Identical appended drawing reference indicates identical throughout the specification
Element.
When describing the disclosure, omission is unnecessarily made into the disclosure not to the detailed description of related known techniques
It is clear.Whens using term " includes ", " having ", " consist of " etc., as long as not using term " only ", so that it may add it
His part.Unless expressly stated, otherwise singular can be interpreted plural form.
Even if not clearly stating, element can also be interpreted as including error margin.When use " ... on ", " ...
Top ", when " in ... lower section ", " on ... side " etc. are to describe the positional relationship between two parts, as long as " tight without using term
Neighbour " or " direct ", one or more parts can be between described two parts.
It will be appreciated that though term " first ", " second " etc. may be used herein to describe various elements, but these yuan
Part should not be limited by these terms.These terms are for distinguishing an element and another element.The art of element used herein
Language and title are to select for ease of description, and can be different from title of part used in actual product.
The feature of the various illustrative embodiments of the disclosure can partly or wholly be coupled to each other or combine, and
It can technically interact or work together in various ways.Illustrative embodiments can be held independently or related to each other
Row.
Hereinafter, the various illustrative embodiments of the disclosure be will be described in detail with reference to the accompanying drawings.Following exemplary
In embodiment, the description of electroluminescent display be will focus in the organic light emitting display comprising luminous organic material.So
And, it should be noted that the technical concept of the disclosure is not limited to organic light emitting display, can also be applied to include phosphor
Inorganic light emitting displays.
Firstly, referring to Fig.1, description to be applied to showing for the personal immersion equipment of the miniscope according to the disclosure
Example.Fig. 1 be according to the disclosure include miniscope and imaging len augmented reality equipment schematic diagram.According to this public affairs
The miniscope opened also can be applied to virtual reality device.
Augmented reality equipment according to the disclosure includes: display panel DP, imaging len LE, total reflection mirror FM, light guide LG
With semitransparent mirror HM.In particular, it is desirable to which display panel DP is the two-d display panel of such as organic LED display panel.
Imaging len LE is placed on before display panel DP.The central axis of imaging len LE and the center overlapping of axles of display panel DP.
Total reflection mirror FM is placed on before imaging len LE.Total reflection mirror FM comes from display to by imaging len LE
The entire video 1000 of panel DP is reflected, and is sent it in light guide LG.Light guide LG will be reflected by total reflection mirror FM
Video 1000 lossless be delivered to semitransparent mirror HM.
Semitransparent mirror HM video 1000 of the reflection from the display panel DP delivered by light guide LG simultaneously sends out video 1000
Give the eyes of user.In addition, real world videos 2000 and video that semitransparent mirror HM will enter below from semitransparent mirror HM
1000 provide the eyes for arriving user together.Here, real world videos 2000 are user's direct viewings in real world environments
Video.It can watch together by the display panel DP video 1000 provided and real world videos 2000.That is, making
It can be the covering video being covered on real world videos 2000 for the useful information of the video 1000 of virtual video
(overlaid video), and provided as single video.
The size of augmented reality equipment shown in Fig. 1 is very small and in conjunction with glasses, which can be worn by user
It wears.In order to which augmented reality equipment to be designed to wear on user's body, the size of display panel DP can be made very small, example
Such as, catercorner length is 1 inch or smaller.
In order to provide video information, video simultaneously with external environment by using the flat-panel screens with small display area
Information needs high brightness.Augmented reality equipment should be all available in day and night.That is, augmented reality equipment usually exists
It is used under sunlight or under bright outdoor lighting.Therefore, unless augmented reality equipment has high brightness, otherwise possibly can not be correct
Ground perceives the virtual information and video for being supplied to user.
<the first illustrative embodiments>
Hereinafter, the miniature display of the first illustrative embodiments according to the disclosure will be described referring to Fig. 2 and Fig. 3
Device.Fig. 2 is the amplification view for showing the structure of miniscope of the first illustrative embodiments according to the disclosure.Fig. 3
It is section for showing the structure of the miniscope of the first illustrative embodiments according to the disclosure and being intercepted along the line I-I' of Fig. 2
Face figure.
Referring to Fig. 2, the miniature organic light emitting diode display applied to personal immersion display has with rectangular
Formula is arranged in the unit pixel UP on substrate SUB.Each unit pixel UP includes three sub-pixel SP- for example, red sub-pixel
SPR, green sub-pixels SPG and blue subpixels SPB.
Each sub-pixel SP includes switching thin-film transistor ST, the driving film crystal for being connected to switching thin-film transistor ST
The pipe DT and Organic Light Emitting Diode OLE for being connected to driving thin film transistor (TFT) DT.Scan line SL, data line DL and driving electricity
Streamline VDD is arranged on substrate SUB to limit pixel region.Organic Light Emitting Diode OLE is formed in pixel region to limit
Light emitting region.
Switching thin-film transistor ST is formed as adjacent with the crosspoint of scan line SL and data line DL.Switching thin-film transistor
ST is for selecting pixel.Switching thin-film transistor ST include the grid SG for being connected to scan line SL, semiconductor layer SA, source S S and
Drain SD.Driving thin film transistor (TFT) DT is for driving by the Organic Light Emitting Diode of the switching thin-film transistor ST pixel selected
OLE。
Driving thin film transistor (TFT) DT includes grid DG, the semiconductor layer for being connected to the drain electrode SD of switching thin-film transistor ST
DA, the source electrode DS and drain D D for being connected to driving current line VDD.The drain D D of driving thin film transistor (TFT) DT is connected to organic
The anode A NO of light emitting diode OLE.Organic luminous layer OL is between anode A NO and cathode CAT.Cathode CAT is connected to ground electricity
Pressure.
Referring to Fig. 3, the miniature organic light-emitting diode display for being applied to personal immersion display will be described in further detail
Device.Switching thin-film transistor ST and driving thin film transistor (TFT) DT are formed on substrate SUB.For ease of description, as sectional view
Fig. 3 illustrate only driving thin film transistor (TFT) TR, TG and TB.For example, red driving thin film transistor (TFT) TR setting is in red sub- picture
In plain SPR, green driving thin film transistor (TFT) TG is arranged in green sub-pixels SPG, and blue driving thin film transistor (TFT) TB setting exists
SPB in blue subpixels.The detail section structure of thin film transistor (TFT) is not important problem in the disclosure, therefore will omit it
Detailed description.If it is necessary, the appended drawing reference of thin film transistor (TFT) can be found in Fig. 3.
The surface for foring thin film transistor (TFT) TR, TG and TB of substrate SUB is not flat, and due to being formed on
Many elements and there are many stepped portions.Organic luminous layer OL is needed to form with uniformity to be sent out on flat surfaces
Light.Therefore, planarization film OC (external coating) is coated in the whole surface of substrate SUB so that surface planarisation on substrate.
The anode A NO of Organic Light Emitting Diode OLE is placed on planarization film OC.Here, anode A NO is through the formation of flat
Pixel contact hole PH in smoothization film OC and the drain D D for being connected to driving thin film transistor (TFT) TR, TG and TB.
Each anode A NO includes the reflecting electrode REF that downside is arranged in and the transparent electrode ITO that upside is arranged in.In addition,
Anode A NO includes the first dielectric layer D1 and the second dielectric layer D2 being stacked between reflecting electrode REF and transparent electrode ITO.Thoroughly
Prescribed electrode ITO passes through the contact for being formed in the corner of the first dielectric layer D1 and the second dielectric layer D2 of covering reflecting electrode REF
Part CNT and be connected to reflecting electrode REF.For each sub-pixel SPR, RPG and SPB, the structure of anode A NO is slightly different.
In the anode A NO of blue subpixels SPB, both the first dielectric layer D1 and the second dielectric layer D2 are stacked on transparent
Between electrode ITO and reflecting electrode REF.
In the anode A NO of green sub-pixels SPG, the first dielectric layer D1 is stacked on transparent electrode ITO with uniform thickness
Between reflecting electrode REF.On the other hand, the second dielectric layer D2 can only be stacked on the area Ji Zhai at the edge of the first dielectric layer D1
On domain.Although being not shown, the first dielectric layer D1 is not present in green sub-pixels SPG, and only the second dielectric layer D2 can
To be inserted between transparent electrode ITO and reflecting electrode REF.That is, in green sub-pixels SPG, only the first dielectric layer
One in D1 and the second dielectric layer D2 is inserted between transparent electrode ITO and reflecting electrode REF.
In the anode A NO of red sub-pixel SPR, the major part of transparent electrode ITO and reflecting electrode REF connect directly with one another
Touching.First dielectric layer D1 and the second dielectric layer D2 is only stacked on the extremely narrow region at the edge of reflecting electrode REF.Although not showing
Out, but the first dielectric layer D1 and the second dielectric layer D2 are not present in red sub-pixel SPR, and transparent electrode ITO and anti-
Radio pole REF is directly contacted completely each other.
On the substrate SUB for foring anode A NO, it is being formed with switching thin-film transistor ST, driving thin film transistor (TFT) DT
The dyke BN for limiting light emitting region is formed on the region of various wiring DL, SL and VDD.Anode A NO by dyke BN
Exposed part is used as light emitting region.Organic luminous layer OL is formed on the part of anode A NO exposed by dyke BN.One layer
Cathode CAT is stacked on above organic luminous layer OL.
Organic luminous layer OL can be made of the organic material of generation white light.Because organic luminous layer OL does not emit certain wave
Long light, so organic luminous layer OL can be coated in the whole surface of substrate.In this case, although it is not shown, but
It is that can be stacked on colour filter on cathode CAT to generate red light, green light and blue light.
In the miniature organic light emitting diode display according to the disclosure, due to the architectural difference between anode A NO, instead
The distance between radio pole REF and cathode CAT are different for each sub-pixel SP.For example, in blue subpixels SPB
Reflecting electrode REF and cathode CAT be spaced apart first distance DB, reflecting electrode REF and cathode in blue subpixels SPB
Transparent electrode ITO, the first dielectric layer D1, the second dielectric layer D2 and organic luminous layer OL are stacked between CAT.Green sub-pixels
Reflecting electrode REF and the interval cathode CAT second distance DG in SPG, reflecting electrode REF in green sub-pixels SPG and
Transparent electrode ITO, the first dielectric layer D1 and organic luminous layer OL are stacked between cathode CAT.Reflection in red sub-pixel SPR
Electrode REF and cathode CAT is spaced apart third distance DR, the reflecting electrode REF in red sub-pixel SPR and cathode CAT it
Between be stacked with transparent electrode ITO and organic luminous layer OL.
The light generated from organic luminous layer OL is reflected by reflecting electrode REF and projects (project) upwards.In such case
Under, it can amplify or offset light quantity by the relationship between the wavelength of the light of the space length and reflection of light reflection.If light
Amount is cancelled, then light output is reduced, and brightness is caused to reduce.On the other hand, if light quantity is amplified, it is defeated to realize maximum light
Out, so as to cause high brightness.In order to amplify light quantity, transmitting and projection should from the space length of the organic luminous layer OL light generated
It is the multiple of the wavelength of the light of reflection.That is, the wavelength shift reflecting electrode REF and cathode according to transmitting light can be passed through
The distance between CAT amplifies required light, and realizes high brightness.
This phenomenon is referred to as microcavity effect.As previously described, because red sub-pixel SPR, green sub-pixels SPG and blue
The distance between cathode CAT and reflecting electrode REF in sub-pixel SPB difference and form micro-cavity structure.That is, according to
The presence or absence of first dielectric layer D1 and the second dielectric layer D2 can change micro-cavity structure for each color sub-pixel.Under
Description is used to form the detailed construction of the micro-cavity structure for each color sub-pixel by face.In view of system disclosed in applicant
It makes technique and gives being described below for illustrative embodiments, and can be different from the structure of Fig. 3.It is expected that according to manufacturing environment
Suitable structure is selected with process conditions.
The detailed construction for being used to form the micro-cavity structure for each sub-pixel is described below.Present disclose provides first
With the second illustrative embodiments.However, other than the difference for the method for forming anode, the first and second exemplary embodiment party
Formula provides identical structure for each sub-pixel.Therefore, the description below for the micro-cavity structure of each sub-pixel is suitable for
Both first and second illustrative embodiments.
Firstly, by describing referring to Fig. 4 A to Fig. 4 B according to the blue in the miniature organic light emitting diode display of the disclosure
The structure of sub-pixel SPB, blue subpixels SPB are the examples of the first sub-pixel.Fig. 4 A is the miniature display according to the disclosure
The amplification view of first sub-pixel structure of device.Fig. 4 B is the first sub-pixel structure edge of miniscope according to the present invention
Fig. 4 line II-II' interception amplification sectional view.
The anode A NO of blue subpixels SPB in miniscope of the invention includes reflecting electrode REF, the first dielectric
Layer D1, the second dielectric layer D2 and transparent electrode ITO.Reflecting electrode REF is preferably by (such as silver-colored with high optical reflectance
(Ag), aluminium (Al), molybdenum (Mo) and/or titanium (Ti)) metal material be made.First dielectric layer D1 and the second dielectric layer D2 can be by
Organic material or inorganic material are made.First dielectric layer D1 and the second dielectric layer D2 can be by different materials or identical material system
At.Transparent electrode ITO can be made of the transparent conductive material of such as indium tin oxide or indium-zinc oxide.
It is initially formed reflecting electrode REF.For example, reflecting electrode REF can have rectangular shape.However, reflecting electrode REF
It is not limited to this shape, and can have the other shapes such as octagon or ellipse.First dielectric layer D1 and the second dielectric layer
D2 is sequentially stacked on reflecting electrode REF.Contact portion CNT is formed in the first dielectric layer D1 and the second dielectric layer D2, this connects
Four corner openings that contact portion divides CNT to make reflecting electrode REF.
Transparent electrode ITO is stacked on above the second dielectric layer D2.Transparent electrode ITO passes through contact portion CNT and reflection electricity
Pole REF carries out physical and electrical contact and connect with reflecting electrode REF.In the anode A NO of the first sub-pixel, reflecting electrode
REF and transparent electrode ITO is spaced apart the sum of the thickness of the first dielectric layer D1 and the second dielectric layer D2 T1+T2.
Dyke BN is formed on transparent electrode ITO.Dyke BN have opening, the opening so that transparent electrode ITO big portion
Branch center region openings (open).For example, dyke BN can be shaped as all four sides of covering transparent electrode ITO and four are turned
Angle.The aperture ratio of pixel and brightness are determined by the opening area of dyke BN.Opening area is bigger (i.e. aperture ratio is higher), and brightness is got over
It is high.Therefore, it is desirable to which dyke BN is configured as covering anode A NO as few as possible.For example, dyke BN may include contact portion
CNT, and the surface area as small as possible that can be preferably shaped on the edge of covering anode A NO.
Fig. 4 A shows element and is separated from each other sizable distance.However, this is attached drawing in order to better understand, and
The boundary of element may actually overlap.If it is necessary, element can be spaced farther.
Next, by describing referring to Fig. 5 A to Fig. 5 B according to green in the miniature organic light emitting diode display of the disclosure
The structure of sub-pixels SPG, green sub-pixels SPG are the examples of the second sub-pixel.Fig. 5 A is shown according to the micro- of the disclosure
The amplification view of second sub-pixel structure of escope.Fig. 5 B is the second son for showing the miniscope according to the disclosure
The amplification sectional view that dot structure is intercepted along the line III-III' of Fig. 5 A；
The anode A NO of green sub-pixels SPG in miniscope of the invention includes reflecting electrode REF, the first dielectric
Layer D1, the second dielectric layer D2 and transparent electrode ITO.Reflecting electrode REF is preferably by the metal material system with high optical reflectance
At such as silver-colored (Ag), aluminium (Al), molybdenum (Mo) and/or titanium (Ti).First dielectric layer D1 and the second dielectric layer D2 can be by organic materials
Material or inorganic material are made.Transparent electrode ITO can be by the transparent conductive material system of such as indium tin oxide or indium-zinc oxide
At.
It is initially formed reflecting electrode REF.For example, reflecting electrode REF can have rectangular shape.First dielectric layer D1 and
Two dielectric layer D2 are sequentially stacked on reflecting electrode REF.Specifically, the second dielectric layer D2 is stacked selectively to cover first Jie
Surface area as small as possible on the edge of electric layer D1.Contact portion CNT is formed in the first dielectric layer D1 and the second dielectric layer D2,
It makes four corner openings of reflecting electrode REF.Although being not shown, the second dielectric layer D2 can not be formed.?
In this case, contact portion CNT is formed in four corners of the first dielectric layer D1.
Transparent electrode ITO is stacked on above the first dielectric layer D1 and the second dielectric layer D2.Transparent electrode ITO passes through contact portion
Divide CNT to carry out physical and electrical contact with reflecting electrode REF and is connect with reflecting electrode REF.In the anode A NO of the second sub-pixel
In, the thickness T1 of reflecting electrode REF and transparent electrode ITO the first dielectric layer D1 spaced apart.
Dyke BN is formed on transparent electrode ITO.Dyke BN have opening, the opening so that transparent electrode ITO big portion
Branch center region openings.For example, dyke BN can be shaped as all four sides and four turnings of covering transparent electrode ITO.Picture
The aperture ratio and brightness of element are determined by the opening area of dyke BN.Opening area is bigger (i.e. aperture ratio is higher), and brightness is higher.Cause
This, it is expected that dyke BN is configured as covering anode A NO as few as possible.For example, it is desirable to which it is including contact that dyke BN, which is shaped as,
Surface area as small as possible is covered on the edge of the anode A NO of part CNT and the second dielectric layer D2.That is, by dyke
In the part of BN exposure, only the first dielectric layer D1 is inserted between reflecting electrode REF and transparent electrode ITO.
Finally, by describing referring to Fig. 6 A to Fig. 6 B according to the red in the miniature organic light emitting diode display of the disclosure
The structure of sub-pixel SPR, red sub-pixel SPR are the examples of red sub-pixel.Fig. 6 A is shown according to the miniature of the disclosure
The amplification view of the third sub-pixel structure of display.Fig. 6 B is the third sub- picture shown according to the miniscope of the disclosure
The amplification sectional view that plain structure is intercepted along the line IV-IV' of Fig. 6 A.
The anode A NO of red sub-pixel SPR in miniscope of the invention includes reflecting electrode REF, the first dielectric
Layer D1, the second dielectric layer D2 and transparent electrode ITO.Reflecting electrode REF is preferably by the metal material system with high optical reflectance
At such as silver-colored (Ag), aluminium (Al), molybdenum (Mo) and/or titanium (Ti).First dielectric layer D1 and the second dielectric layer D2 can be by organic materials
Material or inorganic material are made.Transparent electrode ITO can be by the transparent conductive material system of such as indium tin oxide or indium-zinc oxide
At.
It is initially formed reflecting electrode REF.For example, reflecting electrode REF can have rectangular shape.First dielectric layer D1 and
Two dielectric layer D2 are sequentially stacked on reflecting electrode REF.Specifically, the first dielectric layer D1 and the second dielectric layer are selectively stacked
D2, surface area as small as possible on the edge to cover reflecting electrode REF.The shape in the first dielectric layer D1 and the second dielectric layer D2
At contact portion CNT, make four corner openings of reflecting electrode REF.Although being not shown, can not be formed
One dielectric layer D1 and the second dielectric layer D2.In this case, there is no contact portion CNT, and transparent electrode ITO with
The contact of reflecting electrode REF direct surface.
Transparent electrode ITO is stacked on the first dielectric layer D1 and the second dielectric layer D2.Transparent electrode ITO passes through contact portion
CNT carries out physical and electrical contact with reflecting electrode REF and connect with reflecting electrode REF.Moreover, transparent electrode ITO by with
Most of central area direct surface of reflecting electrode REF contacts and is physically and electrically connected to reflecting electrode REF.In third sub- picture
In the anode A NO of element, reflecting electrode REF and transparent electrode ITO are not spaced apart each other.
Dyke BN is formed on transparent electrode ITO.Dyke BN have opening, the opening so that transparent electrode ITO big portion
Branch center region openings.For example, dyke BN can be shaped as all four sides and four turnings of covering transparent electrode ITO.Picture
The aperture ratio and brightness of element are determined by the opening area of dyke BN.Opening area is bigger (i.e. aperture ratio is higher), and brightness is higher.Cause
This, it is expected that dyke BN is configured as covering anode A NO as few as possible.For example, it is desirable to which it is including contact that dyke BN, which is shaped as,
Surface area as small as possible is covered on the edge of the anode A NO of part CNT, the first dielectric layer D1 and the second dielectric layer D2.Also
To say, reflecting electrode REF and transparent electrode ITO in the open internal regions of the reflecting electrode REF surrounded by dyke BN each other
Direct surface contact.
It is 5 inches or smaller miniscope that personal immersion display, which can be catercorner length,.Specifically, diagonally
Line length is 1 inch or smaller miniscope is used as augmented reality equipment.It is expected that personal immersion equipment provides high-resolution
Rate, high brightness and high aperture ratio, because it must provide the sense of reality.It is micro- in order to realize 500PPI or higher ultrahigh resolution
Escope needs smaller Pixel Dimensions.For example, in the case where resolution ratio is the miniscope of 500PPI, unit pixel
At least side there is 50 μm of length.In the case where resolution ratio is the miniscope of 5 000PPI, unit pixel is extremely
Few side has 5 μm of length.
In this miniature organic light emitting diode display with micro-pixels size, it is important that make light emitting region most
Bigization is to ensure high brightness and high aperture ratio.Miniature organic light emitting diode display according to the present invention is by by micro-cavity structure
The light quantity in particular range of wavelengths is maximized applied to each sub-pixel, to realize high brightness.
In addition, the light emitting region of the anode in subpixel area can maximize, because of the reflecting electrode of anode and transparent
Electrode is in contact with each other in the corner of reflecting electrode.In addition, the dyke for limiting light emitting region is formed, to include contact portion
Region as small as possible is covered on the edge of the anode divided, so that light emitting region be made to maximize.
<the second illustrative embodiments>
Hereinafter, reference is realized into highest in the miniscope with micro-cavity structure and very small Pixel Dimensions
The manufacturing process of aperture ratio and the second illustrative embodiments are described by structure that manufacturing process is formed.Fig. 7 is to show root
According to the amplification view of the structure of the miniscope of the second illustrative embodiments of the disclosure.
Firstly, referring to Fig. 7, applied to according to the micro- of the personal immersion displays of the second illustrative embodiments of the disclosure
Type organic light emitting diode display has the unit pixel UP on substrate SUB in a matrix.Each unit pixel UP packet
Three sub-pixel SP- are included for example, red sub-pixel SPR, green sub-pixels SPG and blue subpixels SPB.
Each sub-pixel SP includes switching thin-film transistor ST, the driving film crystal for being connected to switching thin-film transistor ST
The pipe DT and Organic Light Emitting Diode OLE for being connected to driving thin film transistor (TFT) DT.Due to retouching for the second illustrative embodiments
The structures and methods for concentrating on being used to form the Organic Light Emitting Diode OLED of the very small size with highest aperture ratio are stated, because
This will be omitted to the detailed description of thin film transistor (TFT) and wiring, this is because thin film transistor (TFT) and wiring and the first and second examples
Property embodiment is identical.
Groove T is formed, between sub-pixel SPR, SPG and SPB to separate sub-pixel SPR, SPG and SPB.Each sub-pixel
With anode A NO.The shape of anode A NO is limited by groove T.For example, groove T is formed on substrate SUB with mesh pattern.Knot
Fruit, sub-pixel SPR, SPG and SPB are with by the groove T rectangular shape limited and in a matrix.
The anode A NO of each sub-pixel SPR, SPG and SPB include reflecting electrode REF and transparent electrode ITO.First dielectric
Layer D1 and the second dielectric layer D2 is stacked between reflecting electrode REF and transparent electrode ITO.Reflecting electrode REF and transparent electrode ITO
Contact portion CNT by being formed in the corner of the first dielectric layer D1 and the second dielectric layer D2 is in contact with each other.The knot of anode A NO
Structure is slightly different in each sub-pixel SP.
In the anode A NO of blue subpixels SPB, the first dielectric layer D1 and the second dielectric layer D2 are all stacked on transparent electricity
Between pole ITO and reflecting electrode REF.In the anode A NO of green sub-pixels SPG, the first dielectric layer D1 is with uniform thickness heap
It is stacked between transparent electrode ITO and reflecting electrode REF.On the other hand, the second dielectric layer D2 can only be stacked on the first dielectric layer
On the small part at the edge of D1.In the anode A NO of red sub-pixel SPR, transparent electrode ITO and reflecting electrode REF's is big
Part is directly in contact with each other.In red sub-pixel SPR, the major part of transparent electrode ITO and reflecting electrode REF connect directly with one another
Touching, and the first dielectric layer D1 and the second dielectric layer D2 are only stacked on REF on the small part at reflecting electrode edge.
Hereinafter, it will be described referring to Fig. 8 A to Fig. 8 G miniature according to the manufacture of the second illustrative embodiments of the disclosure
The method of organic light emitting diode display.Fig. 8 A to Fig. 8 G is to show manufacture according to the second illustrative embodiments of the disclosure
Miniscope method amplification sectional view.
Thin film transistor (TFT) is formed on substrate SUB.In the case where organic light emitting diode display, it is thin to form switch
Film transistor and driving thin film transistor (TFT).For the ease of explaining, illustrating only driving thin film transistor (TFT) here.For example, red drive
Dynamic thin film transistor (TFT) TR is placed in red sub-pixel SPR, and green driving thin film transistor (TFT) TG is placed on green sub-pixels SPG
In, blue driving thin film transistor (TFT) TB is placed on SPB in blue subpixels.The detailed manufacturing process of thin film transistor (TFT) is in the disclosure
In be not important problem, therefore its detailed description will be omitted (Fig. 8 A).
The first planarization is sequentially formed above the whole surface for the substrate SUB for being formed with thin film transistor (TFT) TR, TG and TB
Film OC1 and the second planarization film OC2.Pixel contact hole PH and groove T is formed in the first planarization film OC1 and the second planarization film
In OC2.Pixel contact hole PH expose portion thin film transistor (TFT) TR, TG and TB.Groove T between sub-pixel SPR, SPG and SPB with
Continuous mesh pattern is formed.Although Fig. 8 B shows the surface by groove T exposure substrate SUB, it can also expose and cover
The insulating film of cover thin film transistor (TFT) or the surface of buffer layer.Specifically, the cross section of pixel contact hole PH has positive cone
Shape.On the contrary, groove T has from the top edge of positive cone shape protrusion outstanding.
In the second planarization film OC2 disposed thereon reflective metal material for being formed with pixel contact hole PH and groove T.Reflection
Metal material preferably has high optical reflectance and low-resistance material, such as silver-colored (Ag) or aluminium (Al).As a result, sub-pixel SPR,
Reflecting electrode REF is respectively formed in SPG and SPB.That is, being once coated with reflective metal material, reflective metal material is just
It is limited certainly by groove T and is divided into the reflecting electrode REF for sub-pixel SPR, SPG and SPB.Refer to from restriction along existing
The shape of structure forms pattern, without the Patternized technique of such as photoetching.Meanwhile it being formed in sub-pixel SPR, SPG and SPB
Reflecting electrode REF thin film transistor (TFT) TR, TG and TB can be separately connected to via pixel contact hole PH.In addition, reflection electricity
The residue of pole REF can stay in groove T (Fig. 8 C).
By coat and pattern above the whole surface for the substrate SUB for being formed with reflecting electrode REF insulating materials come
Form the first dielectric layer D1 and the second dielectric layer D2.Specifically, in red sub-pixel SPR, the first dielectric layer D1 and second is situated between
Electric layer D2 is only stacked on the small part at the edge of reflecting electrode REF.In green sub-pixels SPG, the first dielectric layer D1 with
Uniform thickness stacks, but the second dielectric layer D2 is only stacked on the small part at the edge of the first dielectric layer D1.In blue
In the anode A NO of sub-pixel SPB, the first dielectric layer D1 and the second dielectric layer D2 are stacked on transparent electrode ITO and reflecting electrode
Between REF.In addition, the contact portion CNT of expose portion reflecting electrode REF is formed in the first dielectric layer D1 and the second dielectric layer D2
Four corners (Fig. 8 D).
Transparent conductive material is deposited on the whole surface for being formed with the substrate SUB of the first dielectric layer D1 and the second dielectric layer D2
Top.Transparent conductive material may include the material of such as indium tin oxide or indium-zinc oxide.Transparent conductive material passes through groove T
Shape from limit, with have shape identical with reflecting electrode REF, to form transparent electrode ITO.In addition, transparent electrode
The residue of ITO can be stacked on the top of the residue of the reflecting electrode REF in groove T.Each anode A NO is by reflection electricity
Pole REF and transparent electrode ITO composition, stacks gradually the first dielectric layer D1 and the second dielectric layer layer D2 therebetween.Specifically,
Due to the difference of the stacked structure of the first dielectric layer D1 and the second dielectric layer D2, red sub-pixel SPR, green sub-pixels SPG and
Blue subpixels SPB has micro-cavity structure (Fig. 8 E).
Dike is formed by coating above the whole surface of substrate SUB for forming anode A NO and patterning insulating materials
Portion BN.Minimum dimension needed for dyke BN preferably has at least covering contact portion CN.Light emitting region is limited by dyke BN.Cause
This, in red sub-pixel SPR, dyke BN can be the first dielectric layer D1 that covering is stacked on the edge of reflecting electrode REF
With the size of the second dielectric layer D2.In some cases, if the first dielectric layer D1 and the second dielectric layer D2 can be in certain journeys
It is used as dyke BN on degree, then can be omitted dyke BN.However, the transparent electrode ITO of anode A NO with the shape at the top of it accurately
Cover the first dielectric layer D1 and the second dielectric layer D2.Therefore, if dyke BN does not cover the first dielectric layer D1 and the second dielectric layer
D2, then they can diagonally extend outwardly and be included in light emitting region.In this case, it is possible in adjacent subpixels
Between color mixing occurs.In order to prevent this situation, it is most desired that dyke BN covers the first dielectric layer D1 and the second dielectric
The edge (Fig. 8 F) of layer D2.
Organic luminous layer OL and cathode CAT is sequentially stacked on the surface to form the substrate SUB of dyke BN.Cathode CAT
Including indium tin oxide or indium-zinc oxide.As a result, being formd in each sub-pixel by stacking gradually anode A NO, organic
Luminescent layer OL and cathode CAT and the Organic Light Emitting Diode OLE (Fig. 8 G) formed.
In the second illustrative embodiments of the disclosure, up to the present have been described with ultrahigh resolution
The technique of micro-dimension pixel is formed in organic light emitting diode display.In the case where personal immersion display, need from
The ultrahigh resolution of 1,000PPI to 5,000PPI carrys out augmented reality sense.If personal immersion display is with 5,000PPI's
Resolution ratio, then unit pixel can be the size of 5.10 μm of 5.10 μ m, and sub-pixel can be 5.10 μm of 1.70 μ m
Size.Specifically, if reflecting electrode REF is made of the silver (Ag) with high optical reflectance, it is difficult through photoetching process essence
Really form the pattern with several μm of line width.In order to be formed accurately micro- sub-pixel, the exemplary embodiment party of the second of the disclosure
Formula is used from restriction technique.
In order to use from technique is limited, being formed when forming anode A NO, there is the groove T of inverted cone-shaped structure to be important.
Groove T must be formed together with the pixel contact hole PH on the planarization film OC1 and OC2 of covering thin film transistor (TFT) T.Pixel contact
Hole PH is needed with positive cone shape to allow thin film transistor (TFT) T and anode A NO to contact with each other.Since their shape is different,
Pixel contact hole PH and groove T is formed on same film to be not easy to.
Referring to Fig. 9 A and Fig. 9 B, it is described below and is used for according to the formation of the second illustrative embodiments of the disclosure from limit
The example of the method for the groove of technique calmly (self-defining)).Fig. 9 A and Fig. 9 B be show it is exemplary according to the disclosure second
The amplification sectional view of the manufacturing method of groove in the miniscope of embodiment.
Red driving thin film transistor (TFT) TR is formed on substrate SUB.The is coated above red driving thin film transistor (TFT) TR
One planarization film OC1.First groove T1 and the first pixel contact hole H1 is formed in the first planarization film OC1.First groove T1
Limit the boundary of sub-pixel.A part of the red driving thin film transistor (TFT) TR of first pixel contact hole H1 exposure.
The second planarization film OC2 is coated above the whole surface of substrate SUB for being formed with the first planarization film OC1.?
Second groove T2 and the second pixel aperture H2 is formed in second planarization film OC2.In this case, second groove T2 be formed in
The identical position first groove T1, and it is identical as the size of first groove T1.On the other hand, the second pixel contact hole H2 is formed
In position identical with the second pixel contact hole H1, and size is greater than the first pixel contact hole H1 (Fig. 9 A).
Later, by using the erosion to the first planarization film OC1 with high etching reaction but to the second planarization film OC2
The low etching solution of reactivity is carved to etch the first planarization film OC1.Then, first below the second planarization film OC2
Planarization film OC1 is at first groove T1 and the first pixel contact hole H1 by selectively overetch.As a result, first groove T1 shape
It is greater than the extension groove T1' of second groove T2 as size.On the other hand, the first pixel contact hole H1 is formed as size and second
The identical positive cone contact hole H1'(Fig. 9 B of pixel contact hole H2).
As set forth above, it is possible to be formed simultaneously the groove T1 with reverse tapered shapes using the difference of etching reaction and have
The pixel contact hole PH of positive cone shape.For this reason, it may be desirable to which the first planarization film OC1 and the second planarization film OC2 includes having not
With the different materials of etching reaction characteristic.However, the present disclosure is not limited to this method, and such as half-tone mask skill can be used
The other methods of art and undercutting technology.
Although embodiment of the present disclosure has been described in detail with reference to the accompanying drawings, it will be appreciated, however, by one skilled in the art that
In the case where not changing technical spirit of the invention or essential characteristic, the present invention can realize in other specific forms.Invention.
It should be noted, therefore, that aforementioned embodiments are merely illustrative in all respects, it is not necessarily to be construed as the limitation present invention.This
The range of invention is defined by the following claims, rather than is limited by detailed description of the invention.Claim meaning and
What is carried out in range all is altered or modified or its equivalent should be interpreted to fall within the scope of the present invention.
Claims (15)
1. a kind of miniscope, the miniscope include:
Multiple unit pixels, are arranged on substrate in the matrix form；
Driving element is placed in the unit pixel；And
Organic Light Emitting Diode is disposed respectively in the unit pixel and is connected to the driving element；
Wherein, the Organic Light Emitting Diode respectively includes:
Anode has stacked gradually reflecting electrode, the first dielectric layer, the second dielectric layer and transparent electrode in the anode；
The dyke at the edge of the anode is covered, the dyke is located at second dielectric layer；
Organic luminous layer is stacked on above the anode exposed by the dyke；And
Cathode is stacked on above the organic luminous layer,
Wherein, first dielectric layer and second dielectric layer have so that at least one turning in the reflecting electrode is opened
The contact portion of mouth, and the transparent electrode is connected to by the reflecting electrode by the contact portion.
2. miniscope according to claim 1, wherein each of described unit pixel includes the first sub- picture
Element, the second sub-pixel and third sub-pixel, and
Wherein, in first sub-pixel, first dielectric layer and second dielectric layer stack are in the reflecting electrode
Whole surface above, and the contact portion is placed below the dyke.
3. miniscope according to claim 2, wherein in second sub-pixel, the first dielectric layer heap
It being stacked in above the whole surface of the reflecting electrode, second dielectric layer is only stacked on the edge of first dielectric layer,
And the contact portion and second dielectric layer are placed below the dyke.
4. miniscope according to claim 2, wherein in second sub-pixel, only first dielectric layer
It is stacked on above the whole surface of the reflecting electrode, and the contact portion is placed below the dyke.
5. miniscope according to claim 2, wherein in the third sub-pixel, first dielectric layer and
Second dielectric layer is only placed below the dyke corresponding with the edge of the reflecting electrode, and reflection electricity
The interior zone of pole surrounded by the dyke directly carries out surface with the transparent electrode and contacts.
6. miniscope according to claim 2, wherein in the third sub-pixel, there is no described first to be situated between
Electric layer and second dielectric layer, and the transparent electrode is stacked on above the whole surface of the reflecting electrode.
7. miniscope according to claim 2, wherein the cathode and reflecting electrode of first sub-pixel are spaced apart
First distance, the thickness of the first distance and the organic luminous layer, first dielectric layer and second dielectric layer it
And correspondence,
The cathode and reflecting electrode of second sub-pixel are spaced apart second distance, the second distance and the organic luminous layer
It is corresponding with the sum of the thickness of first dielectric layer, and
The cathode and reflecting electrode of the third sub-pixel are spaced apart third distance, the third distance and the organic luminous layer
Thickness it is corresponding.
8. miniscope according to claim 1, wherein each of described unit pixel includes multiple sub- pictures
Element, and the miniscope further includes groove, and the groove is between the multiple sub-pixel with continuous net-shaped pattern shape
At and separate the multiple sub-pixel.
9. miniscope according to claim 8, the miniscope further include:
The first planarization film of the driving element is covered, first planarization film is located above the substrate；And
Second planarization film, second planarization film are stacked on above first planarization film,
Wherein, the groove includes:
The first groove being formed in first planarization film；And
Second groove in second planarization film, the second groove is overlapping with first planarization film and size is small
In the size of first groove.
10. miniscope according to claim 9, wherein form the reflecting electrode by following manner: being formed
There is the whole surface disposed thereon reflecting electrode material of the first groove and the second groove, according to the first groove
The reflecting electrode material is divided into each section for each sub-pixel with the shape of the second groove.
11. miniscope according to claim 9, wherein form the transparent electrode by following manner:
It is being formed with the entire of first dielectric layer, second dielectric layer and the first groove and the second groove
Surface deposits transparent electrode material, with it is described according to the shape of first groove and the second groove by the transparent electrode
Material is divided into each section for each sub-pixel.
12. miniscope according to claim 9, the miniscope further includes pixel contact hole, the pixel
Contact hole is formed in first planarization film and second planarization film and has for driving described in expose portion
The positive cone shape of element,
Wherein, the reflecting electrode is contacted via the pixel contact hole with the driving element.
13. a kind of manufacture includes the method for the miniscope of Organic Light Emitting Diode, the described method comprises the following steps:
Driving element is formed on substrate；
The first planarization film is coated above the whole surface for the substrate for being formed with the driving element；
The second planarization film is coated above first planarization film；
Being formed has from the groove of the top of slot wedge protrusion outstanding, in first planarization film and described the
Sub-pixel is limited between two planarization films；
By forming fluted whole surface disposed thereon metal material formation reflecting electrode, so that the reflecting electrode has
There is the shape of the sub-pixel divided by the groove；
The first dielectric layer and the second dielectric layer are formed with the section corner of the exposure reflecting electrode, first dielectric layer and institute
The second dielectric layer is stated to be sequentially stacked on the surface of the reflecting electrode；And
By in the whole surface disposed thereon transparent conductive material for being formed with first dielectric layer and second dielectric layer
Transparent electrode is formed, so that the transparent electrode has the shape of the sub-pixel divided by the groove.
14. according to the method for claim 13, the method also includes following steps:
By coating and patterning above the whole surface for the substrate for being formed with the anode of the Organic Light Emitting Diode
Insulating materials forms dyke.
15. according to the method for claim 14, the method also includes following steps:
Organic luminous layer and cathode are stacked gradually in the surface for the substrate for being formed with the dyke to described in formation
Organic Light Emitting Diode.
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| KR10-2017-0181352 | 2017-12-27 | ||
| KR1020170181352A KR102468318B1 (en) | 2017-12-27 | 2017-12-27 | High Aperture Ratio Micro Display Having Micro Cavity Structure |
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| CN109979969B CN109979969B (en) | 2023-06-06 |
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| JP (1) | JP6781241B2 (en) |
| KR (1) | KR102468318B1 (en) |
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| TWI758934B (en) * | 2020-05-27 | 2022-03-21 | 台灣積體電路製造股份有限公司 | Display device and method of forming the same |
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Also Published As
| Publication number | Publication date |
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| GB201821228D0 (en) | 2019-02-13 |
| JP6781241B2 (en) | 2020-11-04 |
| GB2570580A (en) | 2019-07-31 |
| KR102468318B1 (en) | 2022-11-16 |
| CN109979969B (en) | 2023-06-06 |
| KR20190079268A (en) | 2019-07-05 |
| DE102018130137A1 (en) | 2019-06-27 |
| GB2570580B (en) | 2020-04-29 |
| JP2019121604A (en) | 2019-07-22 |
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