CN113745259A - Light emitting diode display panel and preparation method thereof - Google Patents
Light emitting diode display panel and preparation method thereof Download PDFInfo
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- CN113745259A CN113745259A CN202010477915.7A CN202010477915A CN113745259A CN 113745259 A CN113745259 A CN 113745259A CN 202010477915 A CN202010477915 A CN 202010477915A CN 113745259 A CN113745259 A CN 113745259A
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- 238000004519 manufacturing process Methods 0.000 claims description 41
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- 229910002601 GaN Inorganic materials 0.000 description 9
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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Abstract
The invention provides a light emitting diode display panel and a preparation method thereof, wherein the light emitting diode display panel comprises: the first light-emitting epitaxial layer and the second light-emitting epitaxial layer are arranged on the driving back plate at intervals, and share a P-type electrode or an N-type electrode. The method and the device solve the problems that in the prior art, the preparation process of the three-primary-color display panel is complicated, and the product yield is low.
Description
Technical Field
The invention relates to the technical field of light-emitting diode display panels, in particular to a light-emitting diode display panel and a preparation method thereof.
Background
In the prior art, the preparation of the three-primary-color display panel is complex, the process is complicated, and the product yield is low.
Disclosure of Invention
In view of this, embodiments of the present invention provide a light emitting diode display panel and a method for manufacturing the same, so as to solve the problems of the prior art that the manufacturing process of the three-primary-color display panel is complicated and the product yield is low.
A first aspect of the present invention provides a light emitting diode display panel, comprising: the first light-emitting epitaxial layer and the second light-emitting epitaxial layer are arranged on the driving back plate at intervals, and share a P-type electrode or an N-type electrode. According to the light emitting diode display panel provided by the embodiment, the first light emitting epitaxial layer and the second light emitting epitaxial layer share the P-type electrode or the N-type electrode, that is, one electrode of each of the first light emitting epitaxial layer and the second light emitting epitaxial layer can be simultaneously obtained through the process of opening and depositing the metal layer once, so that the preparation process is simplified.
In one embodiment, a light emitting diode display panel includes: the second semiconductor layer is positioned on the driving back plate and comprises first semiconductor units and second semiconductor units which are arranged at intervals; a first light emitting layer and a second light emitting layer on the first semiconductor unit and the second semiconductor unit, respectively; and a first semiconductor layer covering the first light emitting layer and the second light emitting layer; the first semiconductor unit, the first light-emitting layer and the first semiconductor layer form a first light-emitting epitaxial layer; the second semiconductor unit, the second light emitting layer and the first semiconductor layer form a second light emitting epitaxial layer; the first semiconductor layer is shared by the first light emitting epitaxial layer and the second light emitting epitaxial layer to form a P-type electrode or an N-type electrode.
In one embodiment, the light emitting device further comprises a black glue layer positioned between the driving back plate and the first light emitting epitaxial layer and between the driving back plate and the second light emitting epitaxial layer. According to the light emitting diode display panel provided by the embodiment, the black glue layer is manufactured between the driving back plate and the first light emitting epitaxial layer and between the driving back plate and the second light emitting epitaxial layer, compared with the prior art that the black glue layer is manufactured on the cover plate, the black glue layer with the preset thickness can be obtained only by single spin coating and single patterning opening instead of twice spin coating and twice patterning opening which are limited by the technology, so that the preparation process is further simplified.
The second aspect of the present invention provides a method for manufacturing a light emitting diode display panel, including: growing a first semiconductor layer on a first predetermined region on a first substrate; growing a first light-emitting layer and a second light-emitting layer which are arranged at intervals on the first semiconductor layer; growing a second semiconductor layer on the first light emitting layer and the second light emitting layer to form a first light emitting epitaxial layer and a second light emitting epitaxial layer, respectively; bonding a third prepared light-emitting epitaxial layer on a second preset area on the first substrate; preparing metal electrodes on the first light-emitting epitaxial layer, the second light-emitting epitaxial layer and the third light-emitting epitaxial layer respectively to form a first light-emitting unit, a second light-emitting unit and a third light-emitting unit correspondingly; and synchronously transferring the first light-emitting unit, the second light-emitting unit and the third light-emitting unit to a driving backboard to obtain the light-emitting diode display panel. According to the method for manufacturing the light emitting diode display panel, the three-color light emitting units can be manufactured on the same substrate, so that the three-color light emitting units can be transferred to the driving back plate only by single mass transfer, the manufacturing process is simplified, and the yield of the screen body is improved.
In one embodiment, preparing metal electrodes on the first light emitting epitaxial layer, the second light emitting epitaxial layer, and the third light emitting epitaxial layer, respectively, to form the first light emitting unit, the second light emitting unit, and the third light emitting unit correspondingly includes: preparing an insulating layer covering the first light-emitting epitaxial layer, the second light-emitting epitaxial layer and the third light-emitting epitaxial layer on the first substrate; forming holes at the positions, corresponding to the second semiconductor layer, the first semiconductor layer and the third light-emitting epitaxial layer, between the first light-emitting epitaxial layer and the second light-emitting epitaxial layer, of the insulating layer; and evaporating a metal layer in the opening to form a metal electrode. According to the preparation method of the light emitting diode display panel provided by the embodiment, the metal electrodes of the three-color light emitting units are synchronously prepared, so that the preparation process is greatly simplified. Meanwhile, the first light-emitting unit and the second light-emitting unit share the same electrode, which is beneficial to product miniaturization.
In one embodiment, bonding the third light-emitting epitaxial layer prepared in advance to the second predetermined region on the first substrate base plate includes: and adhering the prepared third light-emitting epitaxial layer on a second preset area on the first substrate through glue. According to the method for manufacturing the light emitting diode display panel provided by the embodiment, a bonding mode of the third light emitting epitaxial layer and the first substrate is provided.
In one embodiment, bonding the third light-emitting epitaxial layer prepared in advance to the second predetermined region on the first substrate base plate includes: inverting the second substrate prepared with the third light-emitting epitaxial layer in advance; bonding the third light-emitting epitaxial layer with a second preset region of the first substrate base plate; and removing the second substrate base plate. According to the method for manufacturing the light emitting diode display panel provided by the embodiment, a specific bonding step of the third light emitting epitaxial layer and the first substrate is provided.
In one embodiment, before synchronously transferring the first light emitting unit, the second light emitting unit, and the third light emitting unit to the driving backplane, the method further comprises: preparing a black glue layer covering the first light-emitting unit, the second light-emitting unit and the third light-emitting unit on the first substrate; and removing part of the black glue layer until the metal electrode is exposed. According to the method for manufacturing the led display panel provided in this embodiment, the black adhesive layer is manufactured on the three-color led die before the bulk transfer, and compared with the prior art in which the black adhesive layer is manufactured on the cover plate after the bulk transfer, the method for manufacturing the led display panel provided in this embodiment does not require two times of spin coating and two times of patterning of the opening due to the technical limitations to obtain the black adhesive layer with the predetermined thickness, but only requires one time of spin coating and one time of patterning of the opening to obtain the black adhesive layer with the predetermined thickness, thereby simplifying the manufacturing process.
In one embodiment, preparing the black glue layer covering the first, second, and third light emitting cells on the first substrate base includes: and preparing a black glue layer which covers the first light-emitting unit, the second light-emitting unit and the third light-emitting unit and has a flat surface on the first substrate. According to the preparation method of the light emitting diode display panel provided by the embodiment, the black glue layer with the flat surface is prepared, so that the surface of the subsequent black glue layer can be matched with the surface of the driving back plate more tightly when being contacted with the surface of the driving back plate, and the stability of a device is improved.
In one embodiment, the synchronized transfer of the first, second, and third light emitting units to the driving backplane comprises: the metal electrode is matched and bonded with an electrode contact on a pre-prepared driving back plate; removing the first substrate to expose the first light emitting unit, the second light emitting unit and the third light emitting unit; and covering cover plates on the first light-emitting unit, the second light-emitting unit and the third light-emitting unit, and attaching the cover plates to the driving back plate.
According to the light emitting diode display panel and the method for manufacturing the same provided by the present invention, the light emitting diode display panel includes: the first light-emitting epitaxial layer and the second light-emitting epitaxial layer are arranged on the driving back plate at intervals, and share a P-type electrode or an N-type electrode. Since the first light-emitting epitaxial layer and the second light-emitting epitaxial layer share the P-type electrode or the N-type electrode, namely, one electrode of each of the first light-emitting epitaxial layer and the second light-emitting epitaxial layer can be simultaneously obtained through the process of opening and depositing the metal layer once.
Drawings
Fig. 1 is a flowchart of a method for manufacturing an led display panel according to an embodiment of the present invention.
Fig. 2-7 are schematic process diagrams of the preparation method shown in fig. 1.
Fig. 8 is a flowchart of a method for manufacturing an led display panel according to a second embodiment of the invention.
Fig. 9-12 are schematic process diagrams of the manufacturing method shown in fig. 8.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The inventor researches for a long time to find that a three-primary-color display panel in the prior art generally needs to prepare red, green and blue light emitting diode unit arrays on three substrate substrates respectively, and then transfers the red, green and blue light emitting diode unit arrays to a driving backboard through three times of mass transfer to form the three-primary-color display panel; meanwhile, the preparation process of the P-type electrode and the N-type electrode in the red, green and blue light emitting diode units is complex. The whole preparation process of the three-primary-color display panel is complicated, and the product yield is low. Therefore, the application provides a novel method for manufacturing the light-emitting diode display panel so as to simplify the process and improve the product yield.
Fig. 1 is a flowchart of a method for manufacturing an led display panel according to an embodiment of the present invention. Fig. 2-7 are schematic process diagrams of the preparation method shown in fig. 1. The following describes the fabrication process of the led display panel with reference to fig. 1, 2-7.
As shown in fig. 1, a process 100 for manufacturing an led display panel includes:
step S110 is to grow a first semiconductor layer on a first predetermined region on the first substrate.
Referring to fig. 2, a first substrate 11, such as a 4 inch or 8 inch sapphire wafer, is provided. The first mask 21 is used to select a first predetermined region on the sapphire wafer, i.e. the first predetermined region is exposed by the opening of the first mask 21. And corroding the first preset area of the sapphire wafer by adopting a wet corrosion process to obtain the required crystal orientation. After obtaining the desired crystal, the first mask 21 is used again to grow the first semiconductor layer 12, such as an N-type gallium nitride layer, in the first predetermined region.
In one embodiment, before step S110, the method further includes: the buffer layer 101 is grown on a first predetermined region on the first substrate 11. In this case, step S110 is specifically executed as: the first semiconductor layer 12 is prepared on the buffer layer 101.
In the present embodiment, the buffer layer 101 includes at least one of an aluminum nitride layer and a gallium nitride layer. When the buffer layer 101 includes an aluminum nitride layer and a gallium nitride layer, the aluminum nitride layer is prepared on the first substrate base plate 11, the gallium nitride layer is prepared on the aluminum nitride layer, and the first semiconductor layer 12 is prepared on the gallium nitride layer.
Step S120 of growing a first light emitting layer and a second light emitting layer on the first semiconductor layer at intervals.
In the present embodiment, the first light emitting layer 13 and the second light emitting layer 14 are sequentially grown on the first semiconductor layer 12 at intervals. Specifically, referring to fig. 3, the second mask 22 is used to select a first sub-region on the first semiconductor layer 12, i.e., the opening of the second mask 22 exposes the first sub-region. A first light emitting layer 13, for example a blue multiple quantum well layer, is grown in the first sub-region. Referring to fig. 4, a second sub-region of the first semiconductor layer 12 spaced from the first sub-region is selected by using the third mask 23, i.e., the second sub-region is exposed by the opening of the third mask 23. A second light emitting layer 14, for example a green multiple quantum well layer, is grown in the second sub-region.
Step S130 of growing a second semiconductor layer on the first light emitting layer and the second light emitting layer to form a first light emitting epitaxial layer and a second light emitting epitaxial layer, respectively.
Referring to fig. 5, a second semiconductor layer 15 is simultaneously grown on the first light-emitting layer 13 and the second light-emitting layer 14 using a fourth mask 24. In this case, the first semiconductor layer 12, the first light emitting layer 13, and the second semiconductor layer 15 on the first light emitting layer 13 of the first sub-region collectively constitute the first light emitting epitaxial layer 110. The first semiconductor layer 12, the second light emitting layer 14 and the second semiconductor layer 15 on the second light emitting layer 14 in the second sub-region together constitute a second light emitting epitaxial layer 120.
The first light-emitting epitaxial layer and the second light-emitting epitaxial layer have different light-emitting wavelengths. In one embodiment, the first and second light emitting epitaxial layers 110 and 120 emit blue and green light, respectively. In this case, each of the first and second light emitting epitaxial layers 110 and 120 includes an N-type gallium nitride layer (first semiconductor layer), an indium gallium nitride light emitting layer (light emitting layer), and a P-type gallium nitride layer (second semiconductor layer) sequentially stacked on the sapphire substrate, and the difference therebetween is only in the content of indium element in the indium gallium nitride light emitting layer.
In one embodiment, after the second semiconductor layer 15 is completed in step S130, a current spreading layer 16, such as an ito layer, may be further formed on the second semiconductor layer 15 to spread the current and reduce current crowding.
Step S140, bonding a third light-emitting epitaxial layer prepared in advance to a second predetermined region on the first substrate.
Specifically, referring to fig. 6, first, the second substrate prepared in advance with the third light emitting epitaxial layer 130 is inverted. The third light emitting epitaxial layer 130 includes an N-type semiconductor layer 131, a third light emitting layer 132, and a P-type semiconductor layer 133, which are sequentially stacked on the second substrate.
In this embodiment, the light emitting wavelength of the third light emitting epitaxial layer 130 is different from that of the first light emitting epitaxial layer 110 and the second light emitting epitaxial layer 130. For example, the third light emitting epitaxial layer 130 emits red light. At this time, the third light emitting epitaxial layer 130 includes an N-type gallium arsenide layer, a gallium arsenide phosphide emitting layer, and a P-type gallium arsenide layer, which are sequentially stacked on the gallium arsenide substrate.
Next, the third light emitting epitaxial layer 130 is bonded to a second predetermined region of the first substrate base plate 11.
In one embodiment, the third light emitting epitaxial layer 130 is bonded to the second predetermined region of the first substrate base plate 11 by a glue layer 17 to achieve bonding. Benzocyclobutene (BCB) glue may be used here.
Then, the second substrate is removed. The second substrate is removed, for example, using a laser lift-off technique.
Step S150, metal electrodes are respectively prepared on the first light emitting epitaxial layer, the second light emitting epitaxial layer, and the third light emitting epitaxial layer to correspondingly form a first light emitting unit, a second light emitting unit, and a third light emitting unit.
Specifically, referring to fig. 7, first, the insulating layer 19 is prepared on the first light emitting epitaxial layer 110, the second light emitting epitaxial layer 120, and the third light emitting epitaxial layer 130. The insulating layer 19 may be, for example, a silicon oxide layer.
Next, openings are formed in the insulating layer 19 at positions corresponding to the first semiconductor layer 12 and the third light emitting epitaxial layer 130 between the second semiconductor layer 15 and the first and second light emitting epitaxial layers 110 and 120, respectively. That is, corresponding regions on the first, second and third light emitting epitaxial layers 110, 120 and 130, respectively, are opened to expose the respective N-type and P-type semiconductor layers.
When the insulating layer 19 is opened in a corresponding region of the third light emitting epitaxial layer 130, two holes exposing the N-type semiconductor layer 131 and the P-type semiconductor layer 133 are specifically opened on the third light emitting epitaxial layer 130, and the two holes may be manufactured in the same step so that the two holes are located on the same side of the third light emitting layer 132, or one hole may be first manufactured for preparing one metal electrode, and another hole may be manufactured in a subsequent step for preparing another metal electrode, so that the two holes (two electrodes) are located on two opposite sides of the third light emitting layer 132, respectively.
Then, a metal layer is evaporated in the opening to form the metal electrode 18. The metal electrode 18 includes a P-type electrode and an N-type electrode corresponding to the first light emitting epitaxial layer 110, the second light emitting epitaxial layer 120, and the third light emitting epitaxial layer 130, respectively. Thus, the first light emitting epitaxial layer 110, the second light emitting epitaxial layer 120 and the third light emitting epitaxial layer 130 respectively form a first light emitting unit, a second light emitting unit and a third light emitting unit. When the light emitting wavelength of the third light emitting epitaxial layer 130 is different from that of the first light emitting epitaxial layer 110 and the second light emitting epitaxial layer 130, a three-color light emitting diode chip can be obtained. According to the preparation process of the metal electrode 18, the metal electrodes 18 of the three-color light-emitting unit are synchronously prepared, so that the preparation process is greatly simplified. Meanwhile, the first light-emitting unit and the second light-emitting unit share the same N-type electrode, so that the miniaturization of the product is facilitated.
Step S160, synchronously transferring the first light emitting unit, the second light emitting unit, and the third light emitting unit to the driving backplane to obtain the light emitting diode display panel.
Synchronous transfer refers to a single transfer. And after the first substrate base plate and the driving backboard are aligned by adopting alignment equipment, the first light-emitting unit, the second light-emitting unit and the third light-emitting unit are respectively in one-to-one pairing bonding with the driving unit on the driving backboard, so that the first light-emitting unit, the second light-emitting unit and the third light-emitting unit are transferred to the driving backboard at one time. According to the method for manufacturing the light emitting diode display panel, the three-color light emitting units can be manufactured on the same substrate, so that the three-color light emitting units can be synchronously transferred to the driving back plate only by single massive transfer and single laser lift-off, the manufacturing process is simplified, and the yield of the screen body is improved.
It should be noted that the above method 100 for manufacturing a light emitting diode display panel is also applicable to a process for manufacturing a Micro light emitting diode (Micro LED) display panel, and can achieve corresponding technical effects, which are not described herein again.
Fig. 8 is a flowchart of a method for manufacturing an led display panel according to a second embodiment of the invention. As shown in fig. 8, the process 200 for manufacturing the led display panel further includes a process for manufacturing a black glue layer on the basis of the process 100 shown in fig. 1.
The following describes a manufacturing process 200 of the led display panel provided in this embodiment with reference to schematic process diagrams of the manufacturing method shown in fig. 8 and shown in fig. 9 to 12.
As shown in fig. 8, the process 200 for manufacturing the led display panel further includes, before step S160:
step S170 is to prepare a black matrix layer covering the first light emitting unit, the second light emitting unit, and the third light emitting unit on the first substrate 11.
Referring to fig. 9, a layer of black glue is coated on the upper surfaces of the devices obtained in the previous steps, that is, the upper surfaces of the first substrate 11, the first light emitting unit, the second light emitting unit, and the third light emitting unit, to form a black glue layer 100. The black matrix layer 100 forms a black matrix surrounding the three-color light emitting cells from the periphery. The black adhesive layer 100 comprises carbon powder particles, so that the anti-interference capability of the display panel to external light can be improved, namely, the phenomenon of chip crosstalk is avoided, the contrast of images is obviously improved, and the image color looks brighter.
In one embodiment, step S170 is specifically performed as: and preparing a black glue layer which covers the first light-emitting unit, the second light-emitting unit and the third light-emitting unit and has a flat surface on the first substrate. Specifically, the thickness of the formed film is controlled by controlling the rotation speed of the spin coating device, the concentration and viscosity of the solution, and the like during the spin coating process, so that the black glue layer with a flat surface is obtained. Therefore, when the surface of the subsequent black glue layer is contacted with the surface of the driving back plate, the matching can be tighter, and the stability of the device is improved.
And step S180, removing part of the black adhesive layer until the metal electrode is exposed.
Continuing to refer to fig. 9, after the black glue layer 100 is prepared, the surface of the black glue layer 100 is bombarded by plasma until the metal electrode 18 is exposed.
In this case, step S160 is specifically executed as step S161 to step S163.
Step S161, the metal electrode 18 is bonded to the electrode contact on the pre-prepared driving back plate.
Referring to fig. 10, the driving back plate 20 includes driving circuits corresponding to the first light emitting unit, the second light emitting unit, and the third light emitting unit one to one. And matching the N-type electrode and the P-type electrode of the first light-emitting unit, the second light-emitting unit and the third light-emitting unit with the N-type electrode contact and the P-type electrode contact on the driving circuit, and performing position correction on the alignment points and then performing mutual pairing connection in a transfer mode to realize the control of the driving circuit on the light-emitting units.
Step S162, removing the first substrate to expose the first light emitting unit, the second light emitting unit and the third light emitting unit.
Referring to fig. 10, after the metal electrode 18 and the electrode contact 21 on the driving backplane are bonded in a matching manner, the first substrate 11 is removed by using a laser lift-off technique to expose the first light emitting unit, the second light emitting unit and the third light emitting unit, as shown in fig. 11.
Step S163, covering the first light emitting unit, the second light emitting unit, and the third light emitting unit with a cover plate, and attaching the cover plate to the driving back plate.
Referring to fig. 12, the cover plate 30 covers the first light emitting unit, the second light emitting unit, and the third light emitting unit, and the cover plate 30 is attached to the driving back plate 20, thereby forming the led display panel.
According to the method for manufacturing the light emitting diode display panel provided by the embodiment, the black adhesive layer is manufactured on the three-color light emitting diode chip before the mass transfer, compared with the process of manufacturing the black adhesive layer on the cover plate after the mass transfer in the prior art, the method for manufacturing the light emitting diode display panel provided by the embodiment does not need two times of spin coating and two times of patterning openings to obtain the black adhesive layer with the preset thickness due to the technical limitation, and only needs one time of spin coating and one time of patterning openings to obtain the black adhesive layer with the preset thickness, so that the manufacturing process is simplified.
The present invention further provides a light emitting diode display panel, specifically as shown in fig. 12, the light emitting diode display panel includes a first light emitting epitaxial layer 110 and a second light emitting epitaxial layer 120 that are arranged on the driving back plate 20 at intervals, and the first light emitting epitaxial layer 110 and the second light emitting epitaxial layer 120 share a P-type electrode or an N-type electrode. According to the led display panel provided in this embodiment, the first light-emitting epitaxial layer 110 and the second light-emitting epitaxial layer 120 share a P-type electrode or an N-type electrode, that is, one electrode of each of the first light-emitting epitaxial layer 110 and the second light-emitting epitaxial layer 120 can be obtained simultaneously through a process of opening and depositing a metal layer once, thereby simplifying the preparation process.
Specifically, as shown in fig. 12, the light emitting diode display panel includes: a second semiconductor layer on the driving back plate 20, the second semiconductor layer including first and second semiconductor units 151 and 152 arranged at intervals; a first light-emitting layer 13 and a second light-emitting layer 14 on the first semiconductor unit 151 and the second semiconductor unit 152, respectively; and a first semiconductor layer 12 covering the first light emitting layer 13 and the second light emitting layer 14. Wherein the first semiconductor unit 151, the first light emitting layer 13, and the first semiconductor layer 12 constitute a first light emitting epitaxial layer 110; the second semiconductor unit 152, the second light emitting layer 14 and the first semiconductor layer 12 constitute the second light emitting epitaxial layer 120. The first semiconductor layer 12 is shared by the first light emitting epitaxial layer 110 and the second light emitting epitaxial layer 120 to form a P-type electrode or an N-type electrode.
In one embodiment, the light emitting diode display panel as shown in fig. 12 further includes a black glue layer 100 between the driving back plate 20 and the first light emitting epitaxial layer 110 and between the driving back plate 20 and the second light emitting epitaxial layer 120. According to the led display panel provided in this embodiment, the black glue layer 100 is fabricated between the driving back plate 20 and the first light-emitting epitaxial layer 110 and between the driving back plate 20 and the second light-emitting epitaxial layer 120, compared to the prior art, when the black glue layer 100 is fabricated on the cover plate 30, the black glue layer 100 with a predetermined thickness is obtained without two spin-coating and two patterning openings limited by the technology, and the black glue layer 100 with a predetermined thickness can be obtained only by one spin-coating and one patterning opening, thereby further simplifying the preparation process.
According to the led display panel provided in this embodiment, the led display panel can be obtained by using the method for manufacturing an led display panel provided in any of the above embodiments, and the specific structure not described in the embodiment of the led display panel can refer to the embodiment of the method for manufacturing an led display panel, and can obtain corresponding technical effects.
The foregoing describes the general principles of the present application in conjunction with specific embodiments, however, it is noted that the advantages, effects, etc. mentioned in the present application are merely examples and are not limiting, and they should not be considered essential to the various embodiments of the present application. Furthermore, the foregoing disclosure of specific details is for the purpose of illustration and description and is not intended to be limiting, since the foregoing disclosure is not intended to be exhaustive or to limit the disclosure to the precise details disclosed.
The words such as "including," "comprising," "having," and the like, referred to in this application are open-ended words that mean "including, but not limited to," and are used interchangeably herein. The words "or" and "as used herein mean, and are used interchangeably with, the word" and/or, "unless the context clearly dictates otherwise. The word "such as" is used herein to mean, and is used interchangeably with, the phrase "such as but not limited to".
It should be understood that the terms "first", "second", "third", and "fourth" used in the description of the embodiments of the present invention are only used for clearly illustrating the technical solutions, and are not used for limiting the protection scope of the present invention.
The foregoing description has been presented for purposes of illustration and description. Furthermore, the description is not intended to limit embodiments of the application to the form disclosed herein. While a number of example aspects and embodiments have been discussed above, those of skill in the art will recognize certain variations, modifications, alterations, additions and sub-combinations thereof.
Claims (10)
1. A light emitting diode display panel, comprising:
the first light-emitting epitaxial layer and the second light-emitting epitaxial layer are arranged on the driving back plate at intervals, and share a P-type electrode or an N-type electrode.
2. The light-emitting diode display panel according to claim 1, comprising:
the second semiconductor layer is positioned on the driving back plate and comprises first semiconductor units and second semiconductor units which are arranged at intervals;
a first light emitting layer and a second light emitting layer on the first semiconductor unit and the second semiconductor unit, respectively; and
a first semiconductor layer covering the first light emitting layer and the second light emitting layer;
wherein the first semiconductor unit, the first light emitting layer and the first semiconductor layer constitute the first light emitting epitaxial layer; the second semiconductor unit, the second light emitting layer and the first semiconductor layer form the second light emitting epitaxial layer; the first semiconductor layer is shared by the first light emitting epitaxial layer and the second light emitting epitaxial layer to form the P-type electrode or the N-type electrode.
3. The led display panel of claim 1, further comprising a black glue layer between the driving backplane and the first light emitting epitaxial layer and between the driving backplane and the second light emitting epitaxial layer.
4. A preparation method of a light-emitting diode display panel is characterized by comprising the following steps:
growing a first semiconductor layer on a first predetermined region on a first substrate;
growing a first light-emitting layer and a second light-emitting layer which are arranged at intervals on the first semiconductor layer;
growing a second semiconductor layer on the first light emitting layer and the second light emitting layer to form a first light emitting epitaxial layer and a second light emitting epitaxial layer, respectively;
bonding a third prepared light-emitting epitaxial layer on a second preset area on the first substrate;
preparing metal electrodes on the first light-emitting epitaxial layer, the second light-emitting epitaxial layer and the third light-emitting epitaxial layer respectively to form a first light-emitting unit, a second light-emitting unit and a third light-emitting unit correspondingly;
and synchronously transferring the first light-emitting unit, the second light-emitting unit and the third light-emitting unit to a driving backboard to obtain the light-emitting diode display panel.
5. The method for manufacturing the light emitting diode display panel according to claim 4, wherein the manufacturing of the metal electrodes on the first light emitting epitaxial layer, the second light emitting epitaxial layer and the third light emitting epitaxial layer respectively to form the first light emitting unit, the second light emitting unit and the third light emitting unit correspondingly comprises:
preparing an insulating layer covering the first light-emitting epitaxial layer, the second light-emitting epitaxial layer and the third light-emitting epitaxial layer on the first substrate;
holes are respectively formed in the positions, corresponding to the second semiconductor layer, the first light-emitting epitaxial layer and the third light-emitting epitaxial layer, of the insulating layer, between the first light-emitting epitaxial layer and the second light-emitting epitaxial layer;
and evaporating a metal layer in the opening hole to form the metal electrode.
6. The method for manufacturing the light emitting diode display panel according to claim 4, wherein the step of bonding the third light emitting epitaxial layer prepared in advance to the second predetermined region on the first substrate comprises the steps of:
and adhering the third light-emitting epitaxial layer prepared in advance to the second preset area on the first substrate through glue.
7. The method for manufacturing the light emitting diode display panel according to claim 4, wherein the step of bonding the third light emitting epitaxial layer prepared in advance to the second predetermined region on the first substrate comprises the steps of:
inverting the second substrate prepared with the third light-emitting epitaxial layer in advance;
bonding the third light emitting epitaxial layer with the second predetermined region of the first substrate base plate;
and removing the second substrate base plate.
8. The method for manufacturing the light emitting diode display panel according to claim 4, further comprising, before the synchronously transferring the first light emitting unit, the second light emitting unit and the third light emitting unit to a driving backplane:
preparing a black glue layer covering the first light-emitting unit, the second light-emitting unit and the third light-emitting unit on the first substrate;
and removing part of the black adhesive layer until the metal electrode is exposed.
9. The method of manufacturing a light emitting diode display panel according to claim 8, wherein the manufacturing of the black glue layer covering the first light emitting unit, the second light emitting unit, and the third light emitting unit on the first substrate includes:
preparing a black glue layer which covers the first light emitting unit, the second light emitting unit and the third light emitting unit and has a flat surface on the first substrate.
10. The method of claim 8, wherein the synchronously transferring the first light emitting unit, the second light emitting unit, and the third light emitting unit to a driving backplane comprises:
the metal electrode is in matched bonding with an electrode contact on a pre-prepared driving back plate;
removing the first substrate to expose the first light emitting unit, the second light emitting unit and the third light emitting unit;
covering a cover plate on the first light-emitting unit, the second light-emitting unit and the third light-emitting unit, and attaching the cover plate to the driving back plate.
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