CN110429097A - A kind of preparation method of display panel, display device and display panel - Google Patents
A kind of preparation method of display panel, display device and display panel Download PDFInfo
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- CN110429097A CN110429097A CN201910704256.3A CN201910704256A CN110429097A CN 110429097 A CN110429097 A CN 110429097A CN 201910704256 A CN201910704256 A CN 201910704256A CN 110429097 A CN110429097 A CN 110429097A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Abstract
The invention discloses the preparation methods of a kind of display panel, display device and display panel.Display panel includes: backboard；Multiple micro- luminescence units of LED, each micro- luminescence unit of LED includes LED epitaxial structure, and the LED epitaxial structure is located at the side of the backboard；Bonded layer, between the backboard and the LED epitaxial structure, the bonded layer includes the sub- bonded layer of multiple mutually insulateds, and the LED epitaxial structure is by the sub- bonded layer bonding on the backboard；Pad level is located between the arbitrary neighborhood two micro- luminescence units of LED.The present invention can be avoided the contact conductor fracture of subsequent preparation, to avoid display panel display failure, improve display effect.
Description
Technical field
The present embodiments relate to display technology more particularly to the systems of a kind of display panel, display device and display panel
Preparation Method.
Background technique
Micro- LED (Light Emitting Diode, light emitting diode) is with brightness is high, low in energy consumption, colour gamut is wide, the service life is long
Etc. advantages, in display technology using more and more extensive.
However, the contact conductor of existing micro- LED display panel is easily broken off, to seriously affect micro- LED display panel
Display effect.
Summary of the invention
The present invention provides the preparation method of a kind of display panel, display device and display panel, to avoid display panel
Contact conductor fracture, improves yield, promotes display effect.
In a first aspect, the embodiment of the invention provides a kind of display panels, comprising: backboard；Multiple micro- luminescence units of LED,
Each micro- luminescence unit of the LED includes LED epitaxial structure, and the LED epitaxial structure is located at the side of the backboard；Bonding
Layer, between the backboard and the LED epitaxial structure, the bonded layer includes the sub- bonded layer of multiple mutually insulateds, institute
LED epitaxial structure is stated by the sub- bonded layer bonding on the backboard；Pad level is located at two LED of arbitrary neighborhood
Between micro- luminescence unit.It can be avoided phenomenon of rupture hair due to subsequent electrode lead needs to climb higher slope with biggish angle
It is raw, the yield of display panel is promoted, display effect is promoted.
Optionally, the drop between the pad level and the LED epitaxial structure is 3 microns~4 microns.It can be improved aobvious
Show the stability of panel.
Optionally, the height of the pad level is less than the height of the LED epitaxial structure.It can reduce technology difficulty, save
About cost.
Optionally, the material of the pad level be can photoetching polyimides.Polyimides thermal expansion coefficient is smaller, and chemistry is steady
It is qualitative higher, pad level expansion or shrinkage will not be caused in display panel use process due to temperature, further increased
The stability of display panel, prolongs the service life.
Optionally, the thickness of the bonded layer is less than 4 microns.Further decrease surface of the LED epitaxial structure far from backboard
At a distance from back plate surface, namely further decrease subsequent electrode lead and need the height climbed, avoid contact conductor be broken and
Reduce the display quality of display panel.
Second aspect, the embodiment of the invention also provides a kind of display devices, including display provided in an embodiment of the present invention
Panel.
The third aspect, the embodiment of the invention also provides a kind of preparation methods of display panel, comprising: providing has LED
The backboard of epitaxial layer, wherein the LED epitaxial layer is by bonded layer bonding on the backboard；Pattern the LED extension
Layer, forms multiple LED epitaxial structures；Etch away the bonded layer between the LED epitaxial structure；In arbitrary neighborhood two
Pad level is formed between a LED epitaxial structure.
Optionally, the drop between the pad level and the LED epitaxial structure is 3 microns~4 microns.
It is optionally, described that the backboard with LED epitaxial layer is provided, comprising:
Backboard and the substrate with LED epitaxial layer are provided；
The first bonded layer is formed in the back plate surface, and on the surface of the LED epitaxial layer far from the one side of substrate
Form the second bonded layer；
The concaveconvex structure to match is formed on first bonded layer and second bonded layer respectively；
It aligns the concaveconvex structure and is bonded first bonded layer and second bonded layer.
It is optionally, described to form pad level between any two neighboring LED epitaxial structure, comprising:
Whole face coating can photoetching polyimides；
To described in being located in the LED epitaxial structure can photoetching polyimides be exposed and removal of developing；
It can photoetching polyimides described in solidification residue.
The technical solution of the present embodiment, the display panel provided include backboard, multiple micro- luminescence units of LED, and each LED is micro-
Luminescence unit includes LED epitaxial structure, and LED epitaxial structure is located at the side of backboard；Bonded layer is located at backboard and LED epitaxy junction
Between structure, bonded layer includes the sub- bonded layer of multiple mutually insulateds, and LED epitaxial structure is by sub- bonded layer bonding on backboard；
Pad level, between two micro- luminescence units of LED of arbitrary neighborhood.Pass through two micro- luminescence units of LED in arbitrary neighborhood
Between pad level is set, during subsequent production contact conductor, contact conductor, which need to only extend lesser drop, to be led to outside LED
Prolong surface of the structure far from backboard, avoid contact conductor fracture and cause electric signal can not be delivered to the micro- luminescence unit of LED into
And the micro- luminescence unit of LED is caused to show second-rate problem, improve the yield and display effect of display panel.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of display panel of the prior art；
Fig. 2 is a kind of structural schematic diagram of display panel provided in an embodiment of the present invention；
Fig. 3 is the structural schematic diagram of another display panel provided in an embodiment of the present invention；
Fig. 4 is the structural schematic diagram of another display panel provided in an embodiment of the present invention；
Fig. 5 is a kind of structural schematic diagram of display device provided in an embodiment of the present invention；
Fig. 6 is a kind of flow chart of the preparation method of display panel provided in an embodiment of the present invention；
Fig. 7-Figure 14 is aobvious corresponding to the main flow in the preparation method of display panel provided in an embodiment of the present invention
Show the structural schematic diagram of panel.
Specific embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining the present invention rather than limiting the invention.It also should be noted that in order to just
Only the parts related to the present invention are shown in description, attached drawing rather than entire infrastructure.
Just LED micro- in the prior art has that contact conductor is easily broken off as described in the background art, invents
People has found that the reason of generating this technical problem is after study: micro- LED display panel is according to Flip Chip Bond Technique to equipment essence
The dependence of degree is higher, and yield is lower, therefore more and more uses wafer bonding (wafer bonding) technique；And it uses
Wafer bonding process requirement prepares thicker bonding metal layer, if bonding metal layer needs 4 microns to 10 microns, to avoid bonding
Metal layer out-of-flatness and the phenomenon for causing bonding effect bad；As shown in FIG. 1, FIG. 1 is a kind of display panels of the prior art
Structural schematic diagram, since bonding metal layer is thicker, after the completion of micro- LED preparation, there is biggish depth-to-width ratio in display panel, i.e.,
The ratio d2/d1 of micro- upper surface LED to the distance between the distance d2 and two neighboring micro- LED of backboard d1 are larger, as d1
It is 1 micron to 3 microns, and d2 reaches 10 microns；The distance between two neighboring micro- LED d1 be insufficient to allow contact conductor with compared with
Small angle extends to micro- LED surface by back plate surface, and subsequent when micro- LED surface makes contact conductor, contact conductor needs
It is influenced micro- with the surface that biggish angle extends to micro- LED with higher drop so that contact conductor is easily broken off
The illumination effect of LED, and then influence the display effect of display panel.
Based on above-mentioned technical problem, the present invention proposes following solution:
Fig. 2 is a kind of structural schematic diagram of display panel provided in an embodiment of the present invention, and Fig. 3 provides for the embodiment of the present invention
Another display panel structural schematic diagram, referring to figs. 2 and 3；Display panel includes backboard 101；Multiple micro- luminous lists of LED
Member, each micro- luminescence unit of LED include LED epitaxial structure 103, and LED epitaxial structure 103 is located at the side of backboard 101；Bonded layer
102, between backboard 101 and LED epitaxial structure 103, bonded layer 102 includes the sub- bonded layer 1021 of multiple mutually insulateds,
LED epitaxial structure 103 is by sub- 1021 bonding of bonded layer on backboard 101；Pad level 104, positioned at two LED of arbitrary neighborhood
Between micro- luminescence unit.
Specifically, backboard 101 can be made of silica-base material, may be provided with driving circuit inside backboard 101, and driving circuit is logical
Excessive sub- bonded layer 1021 provides driving signal to LED epitaxial structure 103, corresponding to drive LED epitaxial structure 103 to issue
Light；Multiple micro- luminescence units of LED can be uniformly distributed on backboard 101, so that the display of display panel is more uniform；Its
In, each micro- luminescence unit of LED includes LED epitaxial structure 103, and LED epitaxial structure may include the p-type GaN layer stacked gradually
1031, multiple quantum well layer 1032 and n-type GaN layer 1033, multiple quantum well layer 1032 can be the material of blue light-emitting, and can be micro- in LED
The upper surface production red light quantum point material or green light quantum point material of luminescence unit change the light face out of the micro- luminescence unit of LED
Color, so that display panel completes the function of colored display.It needs to make on the electrode (n-type GaN layer 1033) of the micro- luminescence unit of LED
Make contact conductor to be provided between the micro- luminescence unit of LED of arbitrary neighborhood padded to the micro- luminescence unit conveying electric signal of LED
Layer 104, so that surface distance pad level 104 of the LED epitaxial structure 103 far from backboard 101 is closer far from the surface of backboard 101,
When subsequent production contact conductor, it is only necessary to along the table of surface and LED epitaxial structure 103 far from backboard 101 of pad level 104
Face extends；Contact conductor need to only climb lesser drop, so as to avoid display panel caused by contact conductor fracture
The problem of yield is lower, and the micro- luminescence unit illumination effect of LED is bad, influences display effect.
The technical solution of the present embodiment, the display panel provided include backboard, multiple micro- luminescence units of LED, and each LED is micro-
Luminescence unit includes LED epitaxial structure, and LED epitaxial structure is located at the side of backboard；Bonded layer is located at backboard and LED epitaxy junction
Between structure, bonded layer includes the sub- bonded layer of multiple mutually insulateds, and LED epitaxial structure is by sub- bonded layer bonding on backboard；
Pad level, between two micro- luminescence units of LED of arbitrary neighborhood.Pass through two micro- luminescence units of LED in arbitrary neighborhood
Between pad level is set, during subsequent production contact conductor, contact conductor, which need to only extend lesser drop, to be led to outside LED
Prolong surface of the structure far from backboard, avoid contact conductor fracture and cause electric signal can not be delivered to the micro- luminescence unit of LED into
And the micro- luminescence unit of LED is caused to show second-rate problem, improve the yield and display effect of display panel.
Optionally, Fig. 3 is the structural schematic diagram of another display panel provided in an embodiment of the present invention, with reference to Fig. 2 and figure
3, the drop between pad level 104 and LED epitaxial structure 103 is 3 microns~4 microns.
Illustratively, as shown in Figure 2, the height of pad level 104 is lower than the height of LED epitaxial structure 103；Alternatively, such as
Shown in Fig. 3, the height of pad level 104 is higher than the height of LED epitaxial structure 103；Alternatively, outside the height and LED of pad level 104
The height for prolonging structure 103 is identical；Drop between pad level 104 and LED epitaxial structure 103 is 3 microns~4 microns, Ke Yibao
When demonstrate,proving subsequent production contact conductor, contact conductor, which need to only extend lesser drop, can lead to the surface of n-type GaN layer 1033, from
And it prevents contact conductor to be broken and influences the yield and display effect of display panel；Preferably, the height of pad level 104 is lower than
The height of LED epitaxial structure 103, except the drop enabled between pad level 104 and LED epitaxial structure 103 is 3 microns~4
Micron is outer, also less material that can be used can prepare pad level 104, is conducive to save the cost；Meanwhile such as production encapsulated layer
In the process, the thickness of the encapsulated layer of 103 corresponding region of LED epitaxial structure is less than the thickness of the encapsulated layer of 104 corresponding region of pad level
Degree can be improved the light extraction efficiency of display panel in the case where encapsulated layer needs certain thickness, improve display effect.
It illustratively, is the structural schematic diagram of another display panel provided in an embodiment of the present invention with reference to Fig. 4, Fig. 4,
It, can be first in pad level 104 and the surface system of LED epitaxial structure 103 after LED epitaxial structure 103 and pad level 104 make
Standby one layer of passivation layer 105, wherein passivation layer 105 can expose surface of the part LED epitaxial structure 103 far from backboard；Then exist
Contact conductor 106 is prepared on passivation layer 105, it can also be netted structure that contact conductor 106 can be prepared for flood covering,
As long as electric signal can be sent to the n-type GaN layer 1033 in LED epitaxial structure 103.At this point, due to LED epitaxial structure
Drop between 103 and pad level 104 is smaller, and contact conductor 106 need to extend lesser drop and can lead to n-type GaN layer
1033 surface so as to avoid the fracture of contact conductor 106, and then avoids asking for the micro- luminescence unit luminous mass difference of LED
Topic, improves display effect.
Optionally, the material of pad level 104 be can photoetching polyimides.The material of pad level 104 may be titanium dioxide
Silicon, specifically, the method that chemical mechanical grinding can be used make silica form pad level.
In this way, cost is relatively low for polyimides, the overall cost of display panel is advantageously reduced；Polyimides simultaneously
Thermal expansion coefficient it is small, chemical stability is high, will not be because of the temperature of display panel in the use process of subsequent display panel
Change and pad level 104 is caused to generate serious expansion or contraction, if can be squeezed outside LED as the expansion of pad level 104 is serious
Prolong structure 103, so that LED epitaxial structure 103 be made to damage；If pad level 104 is shunk seriously, LED epitaxial structure 103 may cause
There are gaps between pad level 104, and then lead to other structures (such as LED epitaxial structure and contact conductor inside display panel
Deng) damage, avoid display panel and show bad problem, improve display effect, extend service life.
Optionally, the thickness of bonded layer 102 is less than 2 microns.In this way, display panel on the one hand can be further decreased
Drop between middle LED epitaxial structure 103 and pad level 104 draws to further avoid subsequent electrode when preparing contact conductor
The problem of thread breakage, improves yield and display effect；On the other hand, additionally it is possible to reduce the integral thickness of display panel, thus more
Good adapts to the lightening growth requirement of display panel.Meanwhile gold may be selected in the material of bonded layer 102, fitting has good lead
Electrically, so that the driving signal of driving circuit generation can be relatively stable in backboard 101 is transmitted in LED epitaxial structure 103；
It is understood that the material of bonded layer 102 can also be other conductive materials.
It should be noted that the thickness of bonded layer in the prior art is typically greater than or equal to 4 microns, technology of the invention
The thickness of bonded layer 102 can be reduced 2 microns by scheme, and specific method will be described in detail in the following embodiments.
Fig. 5 is a kind of structural schematic diagram of display device provided in an embodiment of the present invention, and with reference to Fig. 5, display device 20 is wrapped
Include display panel 19 provided by the present invention.
The structure of display device provided in this embodiment can refer to display panel embodiment provided by the invention, herein no longer
It repeats；Display device 20 includes the display panel 19 that any embodiment of that present invention provides, display dress provided in an embodiment of the present invention
Setting to be the display equipment having a display function such as mobile phone, computer and intelligent wearable device, and the embodiment of the present invention is to this
It is not construed as limiting.
Fig. 6 is a kind of flow chart of the preparation method of display panel provided in an embodiment of the present invention, with reference to Fig. 6, display surface
The preparation method of plate includes:
Step S201 provides the backboard with LED epitaxial layer.
Illustratively, Fig. 7-Figure 14 is the main flow institute in the preparation method of display panel provided in an embodiment of the present invention
The structural schematic diagram of corresponding display panel；With reference to Fig. 7, backboard 101 can be silicon substrate backboard, may be provided with drive inside silicon substrate backboard
Dynamic circuit layer, so that the normal display for display panel provides driving signal；LED epitaxial layer 113 may include stacking gradually in key
Close p-type GaN structure 1131, multi-quantum pit structure 1132 and the N-shaped GaN structure 1133 on layer 102；LED epitaxial layer 113 passes through key
It closes layer 102 to be bonded on backboard 101, the material of bonded layer 102 can be gold, to improve the stability of bonding.
Illustratively, with reference to Fig. 8 and Fig. 9, providing the backboard with LED epitaxial layer may include providing backboard 101 and having
The substrate 112 of LED epitaxial layer 113；The first bonded layer 12 is formed on the surface of backboard 101, and in LED epitaxial layer 113 far from lining
The surface at bottom 112 forms the second bonded layer 11；First bonded layer 12 is bonded with the second bonded layer 11 and is shelled substrate 112
From to obtain the backboard with LED epitaxial layer.Wherein, substrate 101 can be silicon substrate or Sapphire Substrate, by substrate
Extension is on 101 to form N-shaped GaN structure 1133, multi-quantum pit structure 1132 and p-type GaN structure 1131.Due to the first bonded layer
12 is more smooth with the bonding surface of the second bonded layer 11, and manufacture craft is relatively simple, is conducive to save the cost.
Alternatively, illustratively, with reference to Figure 10 and Figure 11, the backboard for providing LED epitaxial layer may include providing backboard 101 He
Substrate 112 with Led epitaxial layer 113；The first bonded layer 12 is formed on the surface of backboard 101, and remote in LED epitaxial layer 113
Surface from substrate 112 forms the second bonded layer 11；First bonded layer 12 is bonded with the second bonded layer 11 and by substrate
112 remove to obtain having the backboard of LED epitaxial layer.Wherein, substrate 101 can be silicon substrate or Sapphire Substrate, by
Extension is on substrate 101 to form N-shaped GaN structure 1133, multi-quantum pit structure 1132 and p-type GaN structure 1131.Also, it can divide
The concaveconvex structure to match is not formed on the first bonded layer 12 and the second bonded layer 11, is such as set on the first bonded layer 12
The second concaveconvex structure 1121 on first concaveconvex structure 1221 and the second bonded layer 11, the first concaveconvex structure 1221 and second are concave-convex
Structure 1121 matches, and can align the first concaveconvex structure 1221 and the second concaveconvex structure 1121 makes the first bonded layer 12 and
Two bonded layers 11 are bonded.It illustratively, can be by being coated with photoetching in the first bonded layer 12 or 11 surface of the second bonded layer
Glue, then exposure development, and finally removed photoresist with obtaining concaveconvex structure using ibl etching bonded layer；
Mask plate is made while photoresist removal, is aligned using mask plate, the first bonded layer 12 is bonded with the second bonded layer 11.
By the way that the first bonded layer 12 and the second bonded layer 11 are etched the concaveconvex structure to match, when the first bonded layer 12 and second
The bonded layer that bonded layer 11 is formed after being bonded is relatively thin, further decreases the drop that subsequent electrode lead needs to extend, and reduces electrode
The risk of wire breaking promotes display effect.
It should be noted that the first concaveconvex structure 1221 can also be set on the second bonded layer 11, and it is concave-convex by second
Structure 1121 is set on the first bonded layer 12；In addition, position of first concaveconvex structure 1221 on the first bonded layer 12 is not yet
It is confined to position shown in Figure 11, as long as being capable of forming after enabling to the first bonded layer 12 and the second bonded layer 11 to be bonded
Bonded layer 102.
The thickness of the technical solution of the present embodiment, 1221 protrusions of the first concaveconvex structure can reach 1 micron to 2 microns, phase
It answers, the depth being recessed in the second concaveconvex structure 1121 can reach 1 micron to 2 microns, the first bonded layer 12 and the second bonded layer
The thickness of bonded layer 102 after 11 bondings can reach 2 microns, to be greatly reduced bonded layer 102 compared with the prior art
Thickness, on the one hand can further decrease the drop in display panel between LED epitaxial structure 103 and pad level 104, thus
The problem of subsequent contact conductor when preparing contact conductor is broken is further avoided, yield and display effect are improved；On the other hand, also
The integral thickness of display panel can be reduced, to preferably adapt to the lightening growth requirement of display panel.
Step S202 patterns LED epitaxial layer, forms multiple LED epitaxial structures.
Illustratively, with reference to Figure 12, according to preset pixel arrangement rule, such as according to evenly arranged regular patterned
LED epitaxial layer forms multiple LED epitaxial structures 103, and each LED epitaxial structure 103 can independently shine, and may each comprise according to
P-type GaN layer 1031, multiple quantum well layer 1032 and the n-type GaN layer 1033 of secondary stacking.
Step S203 etches away the bonded layer between LED epitaxial structure.
Illustratively, with reference to Figure 13, the bonded layer between LED epitaxial structure 103 is etched away, is closed with forming multiple sub-keys
Layer 1021, so that mutually insulated between adjacent sub- bonded layer 1021, each LED epitaxial structure 103 both corresponds to a sub-key
Layer 1021 is closed, so that the driving circuit in backboard 101 can send corresponding driving signal to each LED epitaxial structure,
And then display panel is driven to be shown.
Step S204 forms pad level between any two adjacent LEDs epitaxial structure.
Illustratively, the height of settable pad level is lower than the height of LED epitaxial structure；Alternatively, the height of pad level is high
In the height of LED epitaxial structure；Alternatively, the height of pad level is identical as the height of LED epitaxial structure；Pad level and LED extension
Drop between structure is 3 microns to 4 microns, it is ensured that when subsequent production contact conductor, contact conductor need to only extend smaller
Drop can lead to the surface of n-type GaN layer 1033, to prevent contact conductor to be broken and influence the yield of display panel and aobvious
Show effect；Preferably, the height of pad level is lower than the height of LED epitaxial structure, except enabling to pad level and LED epitaxial structure
Between drop it is outer between 3 microns to 4 microns, also less material that can be used can prepare pad level, be conducive to save
About cost；Meanwhile as during production encapsulated layer, the thickness of the encapsulated layer of LED epitaxial structure corresponding region is less than pad level pair
The thickness for answering the encapsulated layer in region can be improved the light extraction efficiency of display panel in the case where encapsulated layer needs certain thickness,
Improve display effect.
Illustratively, pad level is formed between any two adjacent LEDs epitaxial structure can include:
As shown in figure 14, whole face coating can photoetching polyimides 1041, coating can photoetching polyimides 1041 thickness
It can be 6 microns to 7 microns；To be located in LED epitaxial structure 103 can photoetching polyimides 1041 be exposed and develop
Remove, specifically, by be located at LED epitaxial structure 103 on can photoetching polyimides 1041 expose, can photoetching in this region to change
The property of polyimides 1041；Then to after exposure can photoetching polyimides developed with tetramethylammonium hydroxide developer solution
Removal；Finally, under conditions of 100 DEG C to 210 DEG C heat 5min to 2h solidification it is remaining can photoetching polyimides to be padded
High level finally obtains display panel as shown in Figure 2.
The technical solution of the present embodiment, prepared display panel, during subsequent production contact conductor, contact conductor is not
Need to climb with biggish angle compared with Gao Po again, avoid contact conductor fracture and cause electric signal can not be delivered to LED it is micro- shine
Unit causes the micro- luminescence unit of LED to show second-rate problem in turn, improves the yield and display effect of display panel.
Note that the above is only a better embodiment of the present invention and the applied technical principle.It will be appreciated by those skilled in the art that
The invention is not limited to the specific embodiments described herein, be able to carry out for a person skilled in the art it is various it is apparent variation,
It readjusts and substitutes without departing from protection scope of the present invention.Therefore, although being carried out by above embodiments to the present invention
It is described in further detail, but the present invention is not limited to the above embodiments only, without departing from the inventive concept, also
It may include more other equivalent embodiments, and the scope of the invention is determined by the scope of the appended claims.
Claims (10)
1. a kind of display panel characterized by comprising
Backboard；
Multiple micro- luminescence units of LED, each micro- luminescence unit of LED includes LED epitaxial structure, the LED epitaxial structure position
In the side of the backboard；
Bonded layer, between the backboard and the LED epitaxial structure, the bonded layer includes the sub-key of multiple mutually insulateds
Layer is closed, the LED epitaxial structure is by the sub- bonded layer bonding on the backboard；
Pad level is located between the arbitrary neighborhood two micro- luminescence units of LED.
2. display panel according to claim 1, which is characterized in that between the pad level and the LED epitaxial structure
Drop be 3 microns~4 microns.
3. display panel according to claim 2, which is characterized in that the height of the pad level is less than the LED extension
The height of structure.
4. display panel according to claim 1, which is characterized in that the material of the pad level is can photoetching polyamides Asia
Amine.
5. display panel according to claim 1, which is characterized in that the thickness of the bonded layer is less than 4 microns.
6. a kind of display device, which is characterized in that including the described in any item display panels of claim 1-5.
7. a kind of preparation method of display panel characterized by comprising
There is provided the backboard with LED epitaxial layer, wherein the LED epitaxial layer is by bonded layer bonding on the backboard；
The LED epitaxial layer is patterned, multiple LED epitaxial structures are formed；
Etch away the bonded layer between the LED epitaxial structure；
Pad level is formed between any two neighboring LED epitaxial structure.
8. the preparation method of display panel according to claim 7, which is characterized in that outside the pad level and the LED
Prolonging the drop between structure is 3 microns~4 microns.
9. the preparation method of display panel according to claim 7, which is characterized in that described provide has LED epitaxial layer
Backboard, comprising:
Backboard and the substrate with LED epitaxial layer are provided；
The first bonded layer is formed in the back plate surface, and is formed in the LED epitaxial layer far from the surface of the one side of substrate
Second bonded layer；
The concaveconvex structure to match is formed on first bonded layer and second bonded layer respectively；
It aligns the concaveconvex structure and is bonded first bonded layer and second bonded layer.
10. the preparation method of display panel according to claim 7, which is characterized in that described in any two neighboring institute
It states and forms pad level between LED epitaxial structure, comprising:
Whole face coating can photoetching polyimides；
To described in being located in the LED epitaxial structure can photoetching polyimides be exposed and removal of developing；
It can photoetching polyimides described in solidification residue.
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| CN201910704256.3A CN110429097B (en) | 2019-07-31 | 2019-07-31 | Display panel, display device and preparation method of display panel |
| PCT/CN2020/080936 WO2021017498A1 (en) | 2019-07-31 | 2020-03-24 | Display panel, display device, and method for preparing display panel |
| KR1020227001268A KR20220020936A (en) | 2019-07-31 | 2020-03-24 | Display panel, display device and manufacturing method of display panel |
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| KR (1) | KR20220020936A (en) |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2021017498A1 (en) * | 2019-07-31 | 2021-02-04 | 成都辰显光电有限公司 | Display panel, display device, and method for preparing display panel |
| CN113808937A (en) * | 2020-06-16 | 2021-12-17 | 重庆康佳光电技术研究院有限公司 | Preparation method of display back plate, display back plate and display device |
| CN114497333A (en) * | 2021-12-21 | 2022-05-13 | 镭昱光电科技(苏州)有限公司 | Micro-LED Micro display chip and manufacturing method thereof |
| WO2024016180A1 (en) * | 2022-07-19 | 2024-01-25 | 京东方科技集团股份有限公司 | Light-emitting substrate and manufacturing method therefor, and display panel |
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| TWI787890B (en) * | 2021-06-30 | 2022-12-21 | 錼創顯示科技股份有限公司 | Micro light-emitting diode display device |
| CN113782554A (en) * | 2021-09-06 | 2021-12-10 | 南方科技大学 | Micro-LED display panel, preparation method thereof and display device |
| CN114497112B (en) * | 2022-03-30 | 2022-07-15 | 季华实验室 | Manufacturing method of micro LED display panel and display panel |
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- 2020-03-24 KR KR1020227001268A patent/KR20220020936A/en not_active Application Discontinuation
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Also Published As
| Publication number | Publication date |
|---|---|
| WO2021017498A1 (en) | 2021-02-04 |
| KR20220020936A (en) | 2022-02-21 |
| CN110429097B (en) | 2022-07-12 |
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