CN113782554A - Micro-LED display panel, preparation method thereof and display device - Google Patents
Micro-LED display panel, preparation method thereof and display device Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 136
- 239000004065 semiconductor Substances 0.000 claims abstract description 55
- 238000000034 method Methods 0.000 claims abstract description 32
- 238000005530 etching Methods 0.000 claims abstract description 31
- 239000010410 layer Substances 0.000 claims description 142
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 28
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 24
- 238000004519 manufacturing process Methods 0.000 claims description 20
- 230000003287 optical effect Effects 0.000 claims description 5
- 239000012790 adhesive layer Substances 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 7
- 229910002601 GaN Inorganic materials 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 206010063385 Intellectualisation Diseases 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920000333 poly(propyleneimine) Polymers 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 208000012886 Vertigo Diseases 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000008447 perception Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 231100000889 vertigo Toxicity 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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Abstract
The invention discloses a Micro-LED display panel, a preparation method thereof and a display device, wherein the method comprises the following steps: providing a substrate, wherein the substrate comprises a first surface and a second surface which are oppositely arranged, and growing an LED epitaxial structure on the first surface of the substrate; the LED epitaxial structure is sequentially provided with a first semiconductor layer, a light-emitting active layer and a second semiconductor layer in a laminated mode along the direction of the second surface to the first surface; etching the LED epitaxial structure to form a plurality of LED columns; the included angle between each LED column and the substrate is equal to or larger than 0 degree and smaller than 90 degrees; the LED column and the substrate are inverted and are arranged on the driving substrate; applying a force to the substrate in a direction perpendicular to the first surface along the second surface, peeling the substrate, and transferring the LED posts onto the driving substrate; and forming a first electrode corresponding to the second semiconductor layer and a second electrode corresponding to the first semiconductor layer to form the Micro-LED display panel so as to realize mass transfer of the Micro-LEDs.
Description
Technical Field
The embodiment of the invention relates to the technical field of display panels, in particular to a Micro-LED display panel, a preparation method thereof and a display device.
Background
Modern society has entered informatization and developed towards intellectualization, and display is a key link for realizing information exchange and intellectualization. Among the current display technologies, the Micro-LED display technology is considered as a subversive next generation display technology, and has the advantages of high efficiency, low power consumption, high integration, high stability and the like. One of the most important applications of the Micro-LED is AR & VR application, and the strong field immersion feeling makes the Micro-LED have wide market prospect. In AR & VR applications, it is desirable to increase PPIs to reduce the perception of vertigo over long periods of viewing. The PPI requirements increase linearly with decreasing viewing distance, thus reducing the Micro-LED device size to below 5 microns. For such small size Micro-LEDs, achieving efficient mass transfer is still a technical bottleneck at present.
Disclosure of Invention
The invention provides a Micro-LED display panel, a preparation method thereof and a display device, which aim to realize effective mass transfer of Micro-LEDs.
In order to achieve the above object, an embodiment of a first aspect of the present invention provides a method for manufacturing a Micro-LED display panel, including the following steps:
providing a substrate, wherein the substrate comprises a first surface and a second surface which are oppositely arranged, and growing an LED epitaxial structure on the first surface of the substrate; the LED epitaxial structure is sequentially provided with a first semiconductor layer, a light-emitting active layer and a second semiconductor layer in a stacking mode along the direction of the second surface to the first surface;
etching the LED epitaxial structure to form a plurality of LED columns; the included angle between each LED column and the substrate is the same and is larger than 0 degree and smaller than 90 degrees;
inverting the LED column and the substrate, and placing the LED column and the substrate on a driving base plate; applying a force to the substrate in a direction perpendicular to the first surface along the second surface, peeling the substrate, and transferring the LED column onto the driving substrate;
and forming a first electrode corresponding to the second semiconductor layer and a second electrode corresponding to the first semiconductor layer to form the Micro-LED display panel.
According to an embodiment of the present invention, the LED epitaxial structure further includes a transparent conductive layer, wherein a first semiconductor layer, a light emitting active layer, a second semiconductor layer, and the transparent conductive layer are sequentially stacked in a direction from the second surface toward the first surface.
According to one embodiment of the invention, the LED epitaxial structure is etched to form a plurality of LED columns; every the LED post with the contained angle between the substrate is the same and is greater than 0 degree and be less than 90 degrees and include:
forming a silicon oxide hard mask layer on the surface of one side, away from the substrate, of the LED epitaxial structure;
forming a pixilated graph on the surface of one side, away from the LED epitaxial structure, of the silicon oxide hard mask layer by adopting a micro-nano process;
etching the silicon oxide hard mask layer to transfer the pixilated graph to the silicon oxide hard mask layer;
and etching the LED epitaxial structure based on the silicon oxide hard mask layer to form a plurality of LED columns, wherein the included angle between each LED column and the substrate is greater than 0 degree and less than 90 degrees.
According to an embodiment of the invention, after the etching of the LED epitaxial structure to form a plurality of LED pillars, the plurality of LED pillars are arranged on the substrate in an array along a first direction and a second direction, and extend along a third direction; wherein an included angle between the third direction and a plane formed by the first direction and the second direction is greater than 0 degree and less than 90 degrees, and the first direction and the second direction are perpendicular to each other;
the direction of the vertical projection of the LED columns on the substrate is along the first direction, and the distance between the adjacent LED columns along the first direction is greater than or equal to the length of the LED columns along the third direction; or the vertical projection direction of the LED columns on the substrate is along the second direction, and the distance between the adjacent LED columns along the second direction is greater than or equal to the length of the LED columns along the third direction.
According to one embodiment of the invention, the direction of the vertical projection of the LED pillar on the substrate is between the first direction and the second direction, and the distance between adjacent LED pillars along the first direction is greater than or equal to the length component of the LED pillar in the first direction when the LED pillar is laid flat along the vertical projection direction; and/or the distance between the adjacent LED columns along the second direction is larger than or equal to the length component of the LED columns in the second direction when the LED columns are flatly placed along the vertical projection direction.
According to an embodiment of the present invention, before the LED pillar and the substrate are inverted and placed on the driving substrate, the method further includes:
and forming an optical adhesive layer on the driving substrate.
According to an embodiment of the present invention, after the LED pillar is transferred onto the driving substrate, the method includes:
forming a first insulating layer to cover the LED column and the driving substrate;
etching the first insulating layer to expose the second semiconductor layer and form a first electrode corresponding to the second semiconductor layer;
forming a second insulating layer covering the first electrode and the first insulating layer;
and etching the second insulating layer and the first insulating layer to expose the first semiconductor layer and form a second electrode corresponding to the first semiconductor layer.
According to an embodiment of the present invention, after the LED pillar is transferred onto the driving substrate, the method includes:
forming a first insulating layer to cover the LED column and the driving substrate;
etching the first insulating layer to expose the transparent conductive layer and form a first electrode corresponding to the transparent conductive layer;
forming a second insulating layer covering the first electrode and the first insulating layer;
and etching the second insulating layer and the first insulating layer to expose the first semiconductor layer and form a second electrode corresponding to the first semiconductor layer.
In order to achieve the above purpose, the embodiment of the second aspect of the present invention provides a Micro-LED display panel, which is prepared based on the preparation method of the Micro-LED display panel as described above.
To achieve the above object, a third embodiment of the present invention provides a Micro-LED display device, including the Micro-LED display panel as described above.
According to the embodiment of the invention, the Micro-LED display panel, the preparation method thereof and the display device are provided, wherein the preparation method of the Micro-LED display panel comprises the following steps: providing a substrate, wherein the substrate comprises a first surface and a second surface which are oppositely arranged, and growing an LED epitaxial structure on the first surface of the substrate; the LED epitaxial structure is sequentially provided with a first semiconductor layer, a light-emitting active layer and a second semiconductor layer in a stacking mode along the direction of the second surface to the first surface; etching the LED epitaxial structure to form a plurality of LED columns; the included angle between each LED column and the substrate is the same and is larger than 0 degree and smaller than 90 degrees; inverting the LED column and the substrate, and placing the LED column and the substrate on a driving base plate; applying a force to the substrate in a direction perpendicular to the first surface along the second surface, peeling the substrate, and transferring the LED column onto the driving substrate; and forming a first electrode corresponding to the second semiconductor layer and a second electrode corresponding to the first semiconductor layer to form the Micro-LED display panel so as to realize the mass transfer of the Micro-LED, even the mass transfer of the nano-scale LED, and solve the problem that the Micro-LED device cannot be effectively picked up and put down to cause the mass transfer in the prior art.
Drawings
FIG. 1 is a flow chart of a method for manufacturing a Micro-LED display panel according to an embodiment of the present invention;
FIG. 2 is a process diagram of a method for fabricating a Micro-LED display panel according to one embodiment of the present invention;
FIG. 3 is a process diagram of a method for fabricating a Micro-LED display panel according to another embodiment of the present invention;
FIG. 4 is a process diagram of a method of fabricating a Micro-LED display panel according to yet another embodiment of the present invention;
FIG. 5 is a process diagram of a method of fabricating a Micro-LED display panel according to yet another embodiment of the present invention;
FIG. 6 is a process diagram of a method for fabricating a Micro-LED display panel according to another embodiment of the present invention;
FIG. 7 is a process diagram of a method of fabricating a Micro-LED display panel according to yet another embodiment of the present invention;
FIG. 8 is a schematic structural view of an LED pillar and a substrate in a method for manufacturing a Micro-LED display panel according to still another embodiment of the present invention;
FIG. 9 is a top view of an LED pillar and a substrate in a method of fabricating a Micro-LED display panel according to another embodiment of the present invention;
FIG. 10 is a top view of an LED pillar and a substrate in a method of fabricating a Micro-LED display panel according to yet another embodiment of the present invention;
FIG. 11 is a top view of an LED pillar and a substrate in a method of fabricating a Micro-LED display panel according to yet another embodiment of the present invention;
FIG. 12 is a top view of an LED column and a driving substrate in a method for fabricating a Micro-LED display panel according to another embodiment of the present invention;
FIG. 13 is a cross-sectional view taken along line AA' of FIG. 12;
FIG. 14 is a top view of an LED column and a driving substrate in a method for fabricating a Micro-LED display panel according to another embodiment of the present invention;
FIG. 15 is a schematic structural view of a middle epitaxial structure of a method of fabricating a Micro-LED display panel according to still another embodiment of the present invention;
fig. 16 is a schematic structural diagram of a Micro-LED display device according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
FIG. 1 is a flow chart of a method for manufacturing a Micro-LED display panel according to an embodiment of the present invention. As shown in fig. 1, the method for manufacturing the Micro-LED display panel includes the following steps:
s101, as shown in fig. 2, providing a substrate 001, where the substrate 001 includes a first surface 001A and a second surface 001B disposed opposite to each other, and growing an LED epitaxial structure 002 on the first surface 001A of the substrate 001; the LED epitaxial structure 002 is sequentially stacked with a first semiconductor layer 0021, a light-emitting active layer 0022 and a second semiconductor layer 0023 along the direction from the second surface 001B to the first surface 001A;
it should be noted that the substrate 001 is a substrate on which the LED epitaxial structure 002 grows, and plays a role in supporting and fixing in the Micro-LED display panel preparation process. The substrate 001 mainly includes a sapphire substrate, a silicon substrate, a gallium nitride substrate, a silicon carbide substrate, a zinc oxide substrate, an aluminum nitride substrate, and the like. A sapphire substrate is preferred in this embodiment.
In step S101, an LED epitaxial structure 002 is grown on the substrate 001 by MOCVD (Metal-organic Chemical Vapor Deposition), wherein the first semiconductor layer 0021 may be an N-type GaN layer, the second semiconductor layer 0023 may be a P-type GaN layer, and the light emitting active layer 0022 may include a stacked quantum well composite structure for converting electrical energy into optical energy.
S102, etching the LED epitaxial structure 002 to form a plurality of LED columns 010; the included angle between each LED post 010 and the substrate 001 is the same and is more than 0 degree and less than 90 degrees;
according to an embodiment of the present invention, the etching the LED epitaxial structure 002 forms a plurality of LED pillars 010; each the same contained angle that is greater than 0 degree and be less than 90 degrees between LED post 010 with the substrate 001 includes:
s1021, as shown in fig. 3, forming a hard mask layer 003 of silicon oxide on a surface of the LED epitaxial structure 002 away from the substrate 001;
wherein, the silicon oxide hard mask layer 003 can be formed on the surface of the LED epitaxial structure 002, which is far away from the substrate 001, by means of chemical vapor deposition.
S1022, as shown in fig. 4, forming a pixelated pattern on a surface of the silicon oxide hard mask layer 003 on a side away from the LED epitaxial structure 002 by using a micro-nano process;
wherein, the micron-scale pixel can adopt an ultraviolet photoetching process, and the nanometer-scale pixel can adopt a nanometer impressing process. The pixelized pattern is formed on the surface of one side, away from the LED epitaxial structure 002, of the silicon oxide hard mask layer 003 by adopting a micro-nano process, namely the imprinting glue 004 with the pattern is formed on the surface of one side, away from the LED epitaxial structure 002, of the silicon oxide hard mask layer 003.
S1023, as shown in fig. 5, etching the silicon oxide hard mask layer 003 to transfer the pixelized pattern to the silicon oxide hard mask layer 003;
the hard silicon oxide mask layer 003 is etched by using the imprint resist 004 as a mask and using ICP or RIE equipment, and the pixelated pattern is transferred onto the hard silicon oxide mask layer 003.
S1024, as shown in fig. 6, etching the LED epitaxial structure 002 based on the silicon oxide hard mask layer 003 to form a plurality of LED pillars 010, where the included angle between each LED pillar 010 and the substrate 001 is equal to or greater than 0 degree and less than 90 degrees.
Wherein, when the LED epitaxial structure 002 is etched, ICP equipment is utilized to etch, and during etching, the substrate 001 and the grown LED epitaxial structure 002 need to be obliquely placed in an ICP cavity, and the LED epitaxial structure 002 is deeply etched to the surface of the substrate 001. It should be noted that, finally, the size of the included angle between the LED pillar 010 and the substrate 001 is related to the tilt angle of the LED epitaxial structure 002 during etching.
It can be understood that, in order to etch through the LED epitaxial structure 002, the hard silicon oxide mask layer 003 is etched first, and then the LED epitaxial structure 002 is etched according to the hard silicon oxide mask layer 003 as a mask, so as to implement the etching through of the LED epitaxial structure 002. In other embodiments, other etching methods may be used to etch through the LED epitaxial structure 002, which is not limited in the present invention.
S103, as shown in fig. 7, inverting the LED pillar 010 and the substrate 001, and placing on the driving substrate 005; applying a force to the substrate 001 in a direction perpendicular to the first surface 001A along the second surface 001B, peeling the substrate 001, and transferring the LED post 010 to the driving substrate 005;
after the LED post 010 is obtained through the step S102, the substrate 001 with the LED post 010 is placed upside down on the driving substrate 005, and pressure is applied along the direction in which the second surface 001B is vertically directed to the first surface 001A, since the LED belongs to heteroepitaxy during epitaxial growth, a large number of misfit dislocations exist at the interface between the LED epitaxial structure 002 and the substrate 001, and are very easily broken at the interface, and therefore, the interface between the substrate 001 and the LED post 010 is preferentially broken by applying pressure, so that the LED post 010 is transferred to the driving substrate 005, and a huge transfer of Micro-LEDs is realized.
And S104, forming a first electrode corresponding to the second semiconductor layer 0023 and a second electrode corresponding to the first semiconductor layer 0021 to form the Micro-LED display panel.
After the transfer, an N-type electrode corresponding to the first semiconductor layer 0021, i.e., N-type GaN, and a P-type electrode corresponding to the second semiconductor layer 0023, i.e., P-type GaN, are formed on the driving substrate 005. Finally, the N-type electrode and the P-type electrode are connected to corresponding electrodes on the driving substrate 005 to drive the Micro-LED to emit light.
According to an embodiment of the present invention, as shown in fig. 8, after the etching of the LED epitaxial structure 002 to form a plurality of LED pillars 010, the plurality of LED pillars 010 are arranged on the substrate 001 in an array along the first direction X and the second direction Y, and extend along the third direction Z; an included angle theta between the third direction Z and a plane formed by the first direction X and the second direction Y is larger than 0 degree and smaller than 90 degrees, and the first direction X and the second direction Y are perpendicular to each other;
the direction of the vertical projection of the LED posts 010 on the substrate 001 is along the first direction X, and the distance between adjacent LED posts 010 along the first direction X is greater than or equal to the length of the LED posts 010 along the third direction Z; alternatively, the direction of the vertical projection of the LED posts 010 on the substrate 001 is along the second direction Y, and the distance between adjacent LED posts 010 along the second direction Y is greater than or equal to the length of the LED posts 010 along the third direction Z.
It can be understood that in order to make the LED posts 010 not overlap after being transferred onto the driving substrate 005, the distance between the LED posts 010 needs to be controlled when etching the LED epitaxial structure 002. When the LED posts 010 are transferred on the driving substrate 005 by inversion, the LED posts 010 are substantially transferred to the driving substrate along the vertical projection direction, and when the vertical projection direction of the LED posts 010 on the substrate 001 is along the first direction X, the distance between the adjacent LED posts 010 along the first direction X is greater than or equal to the length of the LED posts 010 along the third direction Z, and the distance between the adjacent LED posts 010 along the second direction Y is not limited; when the direction of the perpendicular projection of the LED posts 010 on the substrate 001 is along the second direction Y, then the spacing between the adjacent LED posts 010 along the second direction Y is greater than or equal to the length of the LED posts 010 along the third direction Z, and the spacing between the adjacent LED posts 010 along the first direction X is not limited. Thereby preventing the LED posts 010 from overlapping after being transferred to the driving substrate 005. The pitch of the etched LED epitaxial structure 002 may be set when the silicon oxide hard mask layer 003 is patterned in step S102.
According to an embodiment of the present invention, a direction of a vertical projection of the LED post 010 on the substrate 001 is between the first direction X and the second direction Y, a distance between adjacent LED posts 010 in the first direction X is greater than or equal to a length component in the first direction X when the LED post 010 is laid flat in the vertical projection direction; and/or, the distance between the adjacent LED posts 010 along the second direction Y is greater than or equal to the length component of the LED posts 010 along the second direction Y when the LED posts 010 lie along the vertical projection direction.
That is, when the LED posts 010 are transferred on the driving substrate 005 in an inverted manner, the LED posts 010 are substantially transferred to the driving substrate 005 along the vertical projection direction, and when the vertical projection direction of the LED posts 010 on the substrate 001 is between the first direction X and the second direction Y, it is only necessary to control the distance between the adjacent LED posts 010 along the first direction X to be greater than or equal to the length component in the first direction X when the LED posts 010 are laid flat along the vertical projection direction, and/or the distance between the adjacent LED posts 010 along the second direction Y to be greater than or equal to the length component in the second direction Y when the LED posts 010 are laid flat along the vertical projection direction.
As shown in fig. 9, it is only necessary to control the distance D2 between the adjacent LED posts 010 along the first direction X to be greater than or equal to the length component of the LED posts 010 along the vertical projection direction X, and the distance D1 between the adjacent LED posts 010 along the second direction Y is not limited. When the electrodes are formed, the P-type electrodes may be formed along the second direction Y. Alternatively, as shown in fig. 10, it is only necessary to control the distance D1 between the adjacent LED posts 010 along the second direction Y to be greater than or equal to the length component of the LED posts 010 along the perpendicular projection direction in the second direction Y, and the distance D2 between the adjacent LED posts 010 along the first direction Y is not limited. When the electrodes are formed, the P-type electrodes may be formed along the first direction X. Alternatively, as shown in fig. 11, the distance D2 between the adjacent LED posts 010 in the first direction X is controlled to be greater than or equal to the length component of the LED posts 010 in the first direction X when the LED posts 010 are placed flat in the vertical projection direction, and the distance D1 between the adjacent LED posts 010 in the second direction Y is controlled to be greater than or equal to the length component of the LED posts 010 in the second direction Y when the LED posts 010 are placed flat in the vertical projection direction, and the fabrication of the P-type electrode may not be limited in the first direction X or the second direction Y.
In the foregoing embodiment, the pitch of the etched LED epitaxial structure 002 may be set when the silicon oxide hard mask layer 003 is patterned in step S102.
According to an embodiment of the present invention, before the LED post 010 and the substrate 001 are inverted and placed on the driving substrate 005, the method further includes:
an optical adhesive layer is formed on the driving substrate 005. So as to increase the friction between the LED post 010 and the driving substrate 005, and the optical glue has a certain elasticity, so that the LED post 010 is not easily broken.
According to an embodiment of the present invention, as shown in fig. 12 to 14, after the LED post 010 is transferred onto the driving substrate 005, it includes:
s1041, forming a first insulating layer 006 covering the LED post 010 and the driving substrate 005; etching the first insulating layer 006 to expose the second semiconductor layer 0023, and forming a first electrode (i.e., P-type electrode) 007 corresponding to the second semiconductor layer 0023;
s1042, forming a second insulating layer 008 covering the first electrode 007 and the first insulating layer 006; the second insulating layer 008 and the first insulating layer 006 are etched to expose the first semiconductor layer 0021, and a second electrode (i.e., an N-type electrode) 009 corresponding to the first semiconductor layer 0021 is formed.
For example, the LED posts 010 are arranged along the first direction X and extend along the second direction Y, the distance between two adjacent LED posts 010 along the second direction Y is greater than or equal to the length of the LED posts 010 along the second direction, and the distance between two adjacent LED posts 010 along the first direction X is not particularly limited. After the LED posts 010 are all transferred onto the driving substrate 005, the first insulating layer 006 is formed by PECVD or ALD deposition, then an electrode window is opened by photolithography, and then wet etching or dry etching is performed thereon to remove the first insulating layer 006 on the surface of the second semiconductor layer 0023, and then the P-type electrode 007 is deposited and prepared. Next, the second insulating layer 008 is deposited continuously to insulate the P-type electrode 007 from the N-type electrode 009, the N-type region is opened by photolithography, the first insulating layer 006 and the second insulating layer 008 on the surface of the first semiconductor layer 0021 are removed by wet etching or dry etching, and then the N-type electrode 009 is deposited to form the structure shown in fig. 14. After the P-type electrode and the N-type electrode are prepared, the alignment and the deposition of the metal electrode can be performed, the N-type electrode on the driving substrate 005 is LED out of the array through the interconnection line, and finally, the single lighting of the LEDs in the array is realized through the P-type electrode and the N-type electrode on the array outer side.
According to an embodiment of the present invention, as shown in fig. 15, the LED epitaxial structure 002 further includes a transparent conductive layer 0024, wherein a first semiconductor layer 0021, a light emitting active layer 0022, a second semiconductor layer 0023 and a transparent conductive layer 0024 are sequentially stacked along the direction in which the second surface 001B points to the first surface 001A. The transparent conductive layer 0024 may be indium tin oxide, and may be deposited on the second semiconductor layer 0023 by magnetron sputtering, so as to implement P-type ohmic contact of the LED, and facilitate contact between the final P-type electrode and the LED pillar.
According to an embodiment of the present invention, after the LED pillar is transferred onto the driving substrate, the method includes:
forming a first insulating layer 006 covering the LED post 010 and the driving substrate 005;
etching the first insulating layer 006 to expose the transparent conductive layer 0024, and forming a first electrode 007 (i.e., a P-type electrode) corresponding to the transparent conductive layer 0024;
forming a second insulating layer 008 covering the first electrode 007 and the first insulating layer 006;
the second insulating layer 008 and the first insulating layer 006 are etched to expose the first semiconductor layer 0021, and a second electrode 009 (i.e., an N-type electrode) corresponding to the first semiconductor layer 0021 is formed.
The remaining steps in this embodiment are the same as those in the previous embodiment, except that when the LED epitaxial structure 002 is formed, a transparent conductive layer 0024 is formed, and the finally fabricated P-type electrode is connected to the transparent conductive layer 0024.
In addition, the embodiment of the second aspect of the invention provides a Micro-LED display panel, which is prepared based on the preparation method of the Micro-LED display panel.
The embodiment of the third aspect of the invention also provides a Micro-LED display device, which comprises the Micro-LED display panel. As shown in fig. 16, the Micro-LED display device 200 includes a Micro-LED display panel 100, and the display device 200 may be a mobile phone, a tablet computer, or other devices for displaying.
In summary, according to the Micro-LED display panel, the preparation method thereof and the display device provided by the embodiment of the invention, the preparation method of the Micro-LED display panel includes the following steps: providing a substrate, wherein the substrate comprises a first surface and a second surface which are oppositely arranged, and growing an LED epitaxial structure on the first surface of the substrate; the LED epitaxial structure is sequentially provided with a first semiconductor layer, a light-emitting active layer and a second semiconductor layer in a stacking mode along the direction of the second surface to the first surface; etching the LED epitaxial structure to form a plurality of LED columns; the included angle between each LED column and the substrate is the same and is larger than 0 degree and smaller than 90 degrees; inverting the LED column and the substrate, and placing the LED column and the substrate on a driving base plate; applying a force to the substrate in a direction perpendicular to the first surface along the second surface, peeling the substrate, and transferring the LED column onto the driving substrate; and forming a first electrode corresponding to the second semiconductor layer and a second electrode corresponding to the first semiconductor layer to form the Micro-LED display panel so as to realize the mass transfer of the Micro-LED, even the mass transfer of the nano-scale LED, and solve the problem that the Micro-LED device cannot be effectively picked up and put down to cause the mass transfer in the prior art.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (10)
1. A preparation method of a Micro-LED display panel is characterized by comprising the following steps:
providing a substrate, wherein the substrate comprises a first surface and a second surface which are oppositely arranged, and growing an LED epitaxial structure on the first surface of the substrate; the LED epitaxial structure is sequentially provided with a first semiconductor layer, a light-emitting active layer and a second semiconductor layer in a stacking mode along the direction of the second surface to the first surface;
etching the LED epitaxial structure to form a plurality of LED columns; the included angle between each LED column and the substrate is the same and is larger than 0 degree and smaller than 90 degrees;
inverting the LED column and the substrate, and placing the LED column and the substrate on a driving base plate; applying a force to the substrate in a direction perpendicular to the first surface along the second surface, peeling the substrate, and transferring the LED column onto the driving substrate;
and forming a first electrode corresponding to the second semiconductor layer and a second electrode corresponding to the first semiconductor layer to form the Micro-LED display panel.
2. A method of fabricating a Micro-LED display panel according to claim 1, wherein the LED epitaxial structure further comprises a transparent conductive layer, wherein a first semiconductor layer, a light emitting active layer, a second semiconductor layer and the transparent conductive layer are sequentially stacked along the second surface in a direction towards the first surface.
3. The method for manufacturing a Micro-LED display panel according to claim 1 or 2, wherein the LED epitaxial structure is etched to form a plurality of LED pillars; every the LED post with the contained angle between the substrate is the same and is greater than 0 degree and be less than 90 degrees and include:
forming a silicon oxide hard mask layer on the surface of one side, away from the substrate, of the LED epitaxial structure;
forming a pixilated graph on the surface of one side, away from the LED epitaxial structure, of the silicon oxide hard mask layer by adopting a micro-nano process;
etching the silicon oxide hard mask layer to transfer the pixilated graph to the silicon oxide hard mask layer;
and etching the LED epitaxial structure based on the silicon oxide hard mask layer to form a plurality of LED columns, wherein the included angle between each LED column and the substrate is greater than 0 degree and less than 90 degrees.
4. The method for manufacturing a Micro-LED display panel according to claim 1, wherein after the etching of the LED epitaxial structure to form a plurality of LED pillars, the plurality of LED pillars are arrayed on the substrate in a first direction and a second direction and extend in a third direction; wherein an included angle between the third direction and a plane formed by the first direction and the second direction is greater than 0 degree and less than 90 degrees, and the first direction and the second direction are perpendicular to each other;
the direction of the vertical projection of the LED columns on the substrate is along the first direction, and the distance between the adjacent LED columns along the first direction is greater than or equal to the length of the LED columns along the third direction; or the vertical projection direction of the LED columns on the substrate is along the second direction, and the distance between the adjacent LED columns along the second direction is greater than or equal to the length of the LED columns along the third direction.
5. A method of making a Micro-LED display panel according to claim 4, wherein the direction of the perpendicular projection of the LED posts on the substrate is between the first direction and the second direction, and the spacing between adjacent LED posts along the first direction is greater than or equal to the length component of the LED posts in the first direction when laid flat along the perpendicular projection direction; and/or the distance between the adjacent LED columns along the second direction is larger than or equal to the length component of the LED columns in the second direction when the LED columns are flatly placed along the vertical projection direction.
6. A method of fabricating a Micro-LED display panel according to claim 1, further comprising, before inverting the LED column and the substrate to place them on a driving substrate:
and forming an optical adhesive layer on the driving substrate.
7. A method of making a Micro-LED display panel according to claim 1, comprising, after the transfer of the LED pillars onto the driving substrate:
forming a first insulating layer to cover the LED column and the driving substrate;
etching the first insulating layer to expose the second semiconductor layer and form a first electrode corresponding to the second semiconductor layer;
forming a second insulating layer covering the first electrode and the first insulating layer;
and etching the second insulating layer and the first insulating layer to expose the first semiconductor layer and form a second electrode corresponding to the first semiconductor layer.
8. A method of making a Micro-LED display panel according to claim 2, comprising, after the transfer of the LED pillars onto the driving substrate:
forming a first insulating layer to cover the LED column and the driving substrate;
etching the first insulating layer to expose the transparent conductive layer and form a first electrode corresponding to the transparent conductive layer;
forming a second insulating layer covering the first electrode and the first insulating layer;
and etching the second insulating layer and the first insulating layer to expose the first semiconductor layer and form a second electrode corresponding to the first semiconductor layer.
9. A Micro-LED display panel, characterized in that it is prepared on the basis of the method for preparing a Micro-LED display panel according to any one of claims 1 to 8.
10. A Micro-LED display device, comprising the Micro-LED display panel according to claim 9.
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