CN110838503A - Manufacturing method of micro LED chip, manufacturing method of micro LED display device and micro LED display device - Google Patents
Manufacturing method of micro LED chip, manufacturing method of micro LED display device and micro LED display device Download PDFInfo
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- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
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Abstract
The embodiment of the application provides a manufacturing method of a micro LED chip, a manufacturing method of a micro LED display device and the micro LED display device. And then attaching one side of the epitaxial layer, which is far away from the first transfer substrate, to the second transfer substrate, and stripping the first transfer substrate from the epitaxial layer to expose one side of the epitaxial layer for chip manufacturing. And finally, manufacturing the micro LED chip on one side of the epitaxial layer far away from the second transfer substrate to form a micro LED chip array. Therefore, the problems of chip displacement and loss risk caused by transferring after the chip is manufactured in the traditional mode are solved, and the transfer yield and accuracy are improved.
Description
Technical Field
The application relates to the technical field of semiconductor manufacturing, in particular to a manufacturing method of a micro LED chip, a manufacturing method of a micro LED display device and the micro LED display device.
Background
Micro-LEDs (Micro-LEDs) have the advantages of being light, thin, long-lived, low power consumption, etc., and are a new generation of display technology devices. However, due to the very small size of the Micro-LED device, the bonding and full-color process of the Micro-LED device with the driving circuit faces a great amount of technical difficulties in transferring a large amount of Micro-LED devices onto the receiving substrate accurately without displacement, and the problem of keeping the loss rate of the Micro-LED devices low is solved.
Currently, a common method is to prepare a finished Micro-LED device, peel it from an original epitaxial substrate, and transfer it to a receiving substrate. In the stripping process, the adopted modes are a laser stripping method and a wet etching method. The high energy accumulation of laser easily causes the damage of the device, and the wet etching method has the problem that the Micro-LED device is lost due to the difficulty in controlling the etching rate, so that the transfer yield of the device is lost.
Disclosure of Invention
In order to overcome at least the above disadvantages in the prior art, embodiments of the present application provide a method for manufacturing a micro LED chip, a method for manufacturing a micro LED display device, and a micro LED display device.
In a first aspect, an embodiment of the present application provides a method for manufacturing a micro LED chip, where the method includes:
providing a first transfer substrate, and attaching an epitaxial layer on the surface of the substrate to the first transfer substrate;
stripping the substrate from the epitaxial layer;
providing a second transfer substrate, and attaching one side, far away from the first transfer substrate, of the epitaxial layer to the second transfer substrate;
peeling the first transfer substrate from the epitaxial layer to expose one side of the epitaxial layer for chip manufacturing;
and manufacturing a micro LED chip on one side of the epitaxial layer, which is far away from the second transfer substrate, so as to form a micro LED chip array.
In an alternative embodiment, the method further comprises:
providing a target substrate provided with a plurality of bonding metals, wherein each bonding metal corresponds to one of the micro LED chips in the array of micro LED chips;
attaching the side, provided with the micro LED chip array, of the epitaxial layer to the side, provided with the bonding metal, of the target substrate so as to bond the corresponding micro LED chip and the bonding metal;
and stripping the second transfer substrate from the epitaxial layer.
In an optional embodiment, the epitaxial layer includes an N-type conductive layer, a quantum well layer, and a P-type conductive layer, which are stacked, the N-type conductive layer is attached to the second transfer substrate, and the step of fabricating the micro LED chip on a side of the epitaxial layer away from the second transfer substrate includes:
etching the P-type conducting layer and the quantum well layer to expose part of the N-type conducting layer;
forming a P-type electrode pattern on the P-type conducting layer by photoetching, and forming an N-type electrode pattern on the exposed N-type conducting layer by photoetching;
and manufacturing and forming a P-type electrode based on the P-type electrode pattern on the P-type conducting layer, and manufacturing and forming an N-type electrode based on the N-type electrode pattern on the N-type conducting layer to form the micro LED chip.
In an alternative embodiment, the step of forming a P-type electrode pattern on the P-type conductive layer and forming an N-type electrode pattern on the exposed N-type conductive layer by photolithography includes:
coating a photoresist layer on the P-type conducting layer and the exposed N-type conducting layer;
exposing and developing the photoresist layer on the P-type conducting layer to expose part of the P-type conducting layer to form a P-type electrode pattern;
and exposing and developing the photoresist layer on the N-type conducting layer to expose part of the N-type conducting layer so as to form an N-type electrode pattern.
In an alternative embodiment, the step of etching the P-type conductive layer and the quantum well layer to expose a part of the N-type conductive layer includes:
etching the P-type conducting layer and the quantum well layer and cutting off the surface of the N-type conducting layer to expose part of the N-type conducting layer; or
And etching the P-type conducting layer and the quantum well layer and forming a groove on the N-type conducting layer to expose part of the N-type conducting layer.
In an alternative embodiment, one side of the first transfer substrate is provided with a first adhesive layer;
the step of attaching the epitaxial layer on the surface of the substrate to the first transfer substrate includes:
and attaching the epitaxial layer on the surface of the substrate to the first transfer substrate through the first bonding layer.
In an alternative embodiment, one side of the second transfer substrate is provided with a second adhesive layer;
the step of attaching the side of the epitaxial layer remote from the first transfer substrate to the second transfer substrate includes:
and attaching one side of the epitaxial layer far away from the first transfer substrate to the second transfer substrate through the second bonding layer.
In an alternative embodiment, the step of peeling the first transfer substrate from the epitaxial layer includes:
and heating or irradiating light to the first adhesive layer on the first transfer substrate, and removing the viscosity of the first adhesive layer and keeping the viscosity of the second adhesive layer to peel the first transfer substrate from the epitaxial layer.
In a second aspect, an embodiment of the present application provides a method for manufacturing a micro LED display device, where the method for manufacturing a micro LED chip described in any of the above embodiments is used to transfer and manufacture a chip.
In a third aspect, an embodiment of the present application provides a micro LED display device, which is manufactured by the above-mentioned manufacturing method of the micro LED display device.
Compared with the prior art, the method has the following beneficial effects:
the embodiment of the application provides a manufacturing method of a micro LED chip, a manufacturing method of a micro LED display device and the micro LED display device. And then attaching one side of the epitaxial layer, which is far away from the first transfer substrate, to the second transfer substrate, and stripping the first transfer substrate from the epitaxial layer to expose one side of the epitaxial layer for chip manufacturing. And finally, manufacturing the micro LED chip on one side of the epitaxial layer far away from the second transfer substrate to form a micro LED chip array. Therefore, the problems of chip displacement and loss risk caused by transferring after the chip is manufactured in the traditional mode are solved, and the transfer yield and accuracy are improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained from the drawings without inventive effort.
Fig. 1 is a flowchart of a method for manufacturing a micro LED chip according to an embodiment of the present disclosure;
fig. 2-8 are schematic diagrams of devices formed in steps of a method for manufacturing a micro LED chip according to an embodiment of the present disclosure;
FIG. 9 is a flowchart of sub-steps of step S150 in FIG. 1;
fig. 10 is a schematic diagram of a device formed by a step in a method for manufacturing a micro LED chip according to an embodiment of the present application;
fig. 11 is another flowchart of a method for manufacturing a micro LED chip according to an embodiment of the present disclosure;
fig. 12-13 are another schematic diagrams of devices formed in steps of a method for manufacturing a micro LED chip according to an embodiment of the present disclosure.
Icon: 10-a substrate; 20-an epitaxial layer; a 21-N type conductive layer; 22-quantum well layer; 23-P type conductive layer; 30-a first transfer substrate; 31-a first adhesive layer; 40-a second transfer substrate; 41-a second adhesive layer; a 51-P type electrode; a 52-N type electrode; 60-a target substrate; a 61-bond metal.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present application, presented in the accompanying drawings, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The embodiment of the application provides a manufacturing method of a micro LED chip, which can be used for solving the problems of displacement, transfer yield loss and the like in the process of transferring a large amount of micro LED chips. Referring to fig. 1, the specific steps of the method for manufacturing a micro LED chip according to the embodiment of the present application are described in detail below.
Step S110, as shown in fig. 2 and fig. 3, provides a first transfer substrate 30, and attaches the epitaxial layer 20 on the surface of the substrate 10 to the first transfer substrate 30.
In this embodiment, an epitaxial layer 20 is formed on a substrate 10 in advance, wherein the substrate 10 may be a silicon substrate 10, a SiC substrate 10, a sapphire substrate 10, a homoepitaxial gallium nitride substrate 10, or the like. Or any other substrate 10 suitable for epitaxial growth of GaN material known to those skilled in the art, and is not particularly limited in this application.
An epitaxial layer 20 formed on the substrate 10 includes an N-type conductive layer 21, a quantum well layer 22, and a P-type conductive layer 23, which are stacked. Alternatively, N-type conductive layer 21 may be formed in advance on the side of substrate 10, and quantum well layer 22 may be formed on the side of N-type conductive layer 21 away from substrate 10. A P-type conductive layer 23 is formed on the quantum well layer 22 on the side away from the N-type conductive layer 21. In this embodiment, the material of N-type conductive layer 21 and P-type conductive layer 23 is not limited, and may be GaAs, GaP, GaN, SiC, AlGaN, or the like.
In this embodiment, a first transfer substrate 30 may be provided, and the first transfer substrate 30 may be a substrate such as glass or a high temperature resistant plastic film. One side of the epitaxial layer 20 may be attached to the first transfer substrate 30, and specifically, the P-type conductive layer 23 may be attached to the first transfer substrate 30.
In this embodiment, a first adhesive layer 31 is provided on one side of the first transfer substrate 30, and the epitaxial layer 20 on the surface of the substrate 10 can be bonded to the first transfer substrate 30 through the first adhesive layer 31.
The first adhesive layer 31 is not limited to a material, and may be a material that can perform an adhesive function and can be detackified or easily removed at a later stage. The first adhesive layer 31 may be formed of uv-adhesive, thermal release adhesive, or the like. The uv-adhesive is a material sensitive to ultraviolet wavelength illumination, that is, the first adhesive layer 31 is irradiated by ultraviolet light, so that the adhesiveness of the first adhesive layer 31 can be reduced. The heat release glue is a material sensitive to temperature, and the viscosity of the first adhesive layer 31 can be reduced by heating the first adhesive layer 31.
In step S120, please refer to fig. 4, the substrate 10 is stripped from the epitaxial layer 20.
In this embodiment, the substrate 10 may be stripped from the epitaxial layer 20 by dry etching, wet etching, or the like. In practice, in order to reduce the difficulty of etching and improve the etching efficiency, the substrate 10 may be polished to be thin, and then the substrate 10 may be stripped from the epitaxial layer 20 by etching.
In this embodiment, the side of the substrate 10 away from the epitaxial layer 20 may be ground by a grinder or the like to reduce the thickness of the substrate 10. When the ground thickness reaches a predetermined thickness value, the substrate 10 may be peeled off from the epitaxial layer 20 by the above-described etching.
In step S130, please refer to fig. 5 and fig. 6, a second transfer substrate 40 is provided, and a side of the epitaxial layer 20 away from the first transfer substrate 30 is attached to the second transfer substrate 40.
In this embodiment, the second transfer substrate 40 may be a substrate such as glass or a high-temperature-resistant plastic film. It should be noted that, when selecting the second transfer substrate 40, a substrate of a material compatible with the Micro-LED processing process and the metal bonding process needs to be selected. The second transfer substrate 40 may be a transparent substrate since metal bonding is subsequently required.
After the substrate 10 is peeled off from the epitaxial layer 20 by the above steps, the side of the epitaxial layer 20 originally bonded to the substrate 10 is exposed, and the side of the epitaxial layer 20 originally distant from the substrate 10 is bonded to the first transfer substrate 30. On the basis of providing the second transfer substrate 40, the side of the epitaxial layer 20 remote from the first transfer substrate 30 may be bonded to the second transfer substrate 40. Specifically, the side of the N-type conductive layer 21 included in the epitaxial layer 20, which is away from the first transfer substrate 30, is bonded to the second transfer substrate 40.
In this embodiment, a second adhesive layer 41 is provided on one side of the second transfer substrate 40, and the side of the epitaxial layer 20 away from the first transfer substrate 30 is bonded to the second transfer substrate 40 by the second adhesive layer 41.
The second adhesive layer 41 is not limited to a material, as long as it can perform an adhesive function and is not affected by the Micro-LED processing process, and the material can be removed at a later stage. The second adhesive layer 41 may also be uv-adhesive. It should be understood that when selecting the materials of the first adhesive layer 31 and the second adhesive layer 41, the materials may be selected to be sensitive to different conditions, respectively, or to different degrees to the same condition. In this way, the first adhesive layer 31 and the second adhesive layer 41 can be prevented from affecting each other during processing.
For example, if the first adhesive layer 31 is selected to be a thermal release glue, the second adhesive layer 41 may be selected to be a uv-decreasing glue. Whereas the first adhesive layer 31 is chosen as uv detackifying glue, the second adhesive layer 41 may be chosen as uv detackifying glue that is thicker than the first adhesive layer 31. As such, when the first adhesive layer 31 is detackified, the second adhesive layer 41 is much less detackified than the first adhesive layer 31.
In step S140, referring to fig. 7, the first transfer substrate 30 is peeled off from the epitaxial layer 20 to expose one side of the epitaxial layer 20 for chip fabrication.
After the side of the epitaxial layer 20 remote from the first transfer substrate 30 is attached to the second transfer substrate 40, the first transfer substrate 30 may be peeled off from the epitaxial layer 20. When peeling the first transfer substrate 30, the first adhesive layer 31 on the first transfer substrate 30 may be deactivated by heating, light irradiation, or the like. As can be seen from the above, the sensitive conditions of the second transfer substrate 40 and the first transfer substrate 30 are generally different, so that when the first transfer substrate 30 is peeled off by removing the adhesiveness of the first adhesive layer 31, the adhesiveness of the second adhesive layer 41 can be maintained without causing the peeling-off of the second transfer substrate 40.
In step S150, referring to fig. 8, a micro LED chip is fabricated on a side of the epitaxial layer 20 away from the second transfer substrate 40 to form a micro LED chip array.
After the first transfer substrate 30 is peeled off from the epitaxial layer 20, a side of the epitaxial layer 20 for chip fabrication, i.e., a side of the epitaxial layer 20 away from the second transfer substrate 40, may be exposed.
As described above, the epitaxial layer 20 includes the N-type conductive layer 21, the quantum well layer 22, and the P-type conductive layer 23, which are stacked. And the N-type conductive layer 21 is attached to the second transfer substrate 40. Referring to fig. 9, when the micro LED chip is fabricated and formed based on the epitaxial layer 20, the fabrication can be achieved by the following steps:
in step S151, the P-type conductive layer 23 and the quantum well layer 22 are etched to expose a portion of the N-type conductive layer 21.
In step S152, a P-type electrode pattern is formed on the P-type conductive layer 23 by photolithography, and an N-type electrode pattern is formed on the exposed N-type conductive layer 21 by photolithography.
In this embodiment, the P-type conductive layer 23 and the quantum well layer 22 may be etched and cut off on the surface of the N-type conductive layer 21, thereby exposing a portion of the N-type conductive layer 21. As another embodiment, the P-type conductive layer 23 and the quantum well layer 22 may be etched and a groove may be formed on the N-type conductive layer 21 to expose a portion of the N-type conductive layer 21. That is, after etching through the P-type conductive layer 23 and the quantum well layer 22, a portion of the N-type conductive layer 21 is continuously etched, thereby forming a groove on the N-type conductive layer 21. In specific implementation, the corresponding etching operation may be performed according to actual requirements, and the embodiment is not particularly limited.
Next, a P-type electrode pattern and an N-type electrode pattern are formed on the P-type conductive layer 23 and the exposed N-type conductive layer 21, respectively, by a photolithography development technique. Alternatively, a photoresist layer may be coated on the P-type conductive layer 23 and the exposed N-type conductive layer 21, wherein the photoresist used may be the inversion adhesive AE5214 or the inversion adhesive SPR220, and the thickness of the coated photoresist may be about 1 μm, so that the edge of the formed photoresist layer has a good shape and is easy to strip later.
The photoresist layer on the P-type conductive layer 23 is exposed and developed to expose a portion of the P-type conductive layer 23 to form a P-type electrode pattern, and the photoresist layer on the N-type conductive layer 21 is exposed and developed to expose a portion of the N-type conductive layer 21 to form an N-type electrode pattern.
In step S153, a P-type electrode 51 is patterned and formed on the basis of the P-type electrode 51 on the P-type conductive layer 23, and an N-type electrode 52 is patterned and formed on the basis of the N-type electrode 52 on the N-type conductive layer 21, so as to form a micro LED chip.
In this embodiment, the P-type electrode 51 is formed on the P-type conductive layer 23, and the N-type electrode 52 is formed on the N-type conductive layer 21 for driving the diode to emit light. After the P-type electrode 51 and the N-type electrode 52 are formed, the photoresist on the device may be removed using an organic solvent, for example, the photoresist may be removed using N-methylpyrrolidone or acetone. And then, filtering the removed device again by using oxygen plasma to ensure that the photoresist is completely removed.
Through the above processes, a plurality of micro LED chips can be prepared and formed on the epitaxial layer 20 attached to the second transfer substrate 40, thereby forming a micro LED chip array.
In this embodiment, isolation between chips is required to avoid crosstalk between chips. Alternatively, referring to fig. 10, through holes penetrating through the epitaxial layer 20 may be formed by etching between two adjacent micro LED devices, where the number of the through holes between each two adjacent micro LED chips is at least two. Therefore, the isolation between two adjacent micro LED chips can be realized.
In this embodiment, the step of preparing the through holes penetrating through the epitaxial layer 20 may be performed after the micro LED chip array is prepared, or may be performed before the micro LED chip array is prepared, which is not limited specifically.
Referring to fig. 11, fig. 12 and fig. 13, based on the above, the method for manufacturing a micro LED chip according to the embodiment of the present application further includes the following steps:
step S160, providing a target substrate 60 provided with a plurality of bonding metals 61, wherein each bonding metal 61 corresponds to one of the micro LED chips in the micro LED chip array.
Step S170, attaching the side of the epitaxial layer 20 provided with the micro LED chip array to the side of the target substrate 60 provided with the bonding metal 61, so as to bond the corresponding micro LED chip and the bonding metal 61.
Step S180, peeling the second transfer substrate 40 from the epitaxial layer 20.
In this embodiment, the arrangement of the bonding metal 61 on the target substrate 60 is the same as the arrangement of the micro LED chip array formed on the epitaxial layer 20, and the plurality of bonding metals 61 correspond to the plurality of micro LED chips one to one. The target substrate 60 may be a driving circuit substrate, and the array of the micro LED chips prepared on the epitaxial layer 20 may be attached to the target substrate 60 downward, and the corresponding micro LED chips are bonded to the bonding metal 61.
In this embodiment, the second transfer substrate 40 on the epitaxial layer 20 can be peeled off by heating, light irradiation, or the like. The specific manner of performing the peeling operation can be determined according to the material of the second adhesive layer 41 on the second transfer substrate 40, which can be referred to above and will not be described herein.
When the second transfer substrate 40 is peeled off from the epitaxial layer 20, since the bonding force between the micro LED chips and the bonding metal 61 is strong, a portion of the epitaxial layer 20 where the micro LED chips are not prepared will remain on the second transfer substrate 40, and a portion where the micro LED chips are prepared will be bonded to the bonding metal 61 on the target substrate 60, as shown in fig. 13.
Through the steps, the manufacturing of the micro LED chips is completed, and the mass transfer of the micro LED chip array is completed. According to the method, the epitaxial layer 20 is transferred to the second transfer substrate 40, then the micro LED chip array is manufactured based on the epitaxial layer 20 on the second transfer substrate 40, and finally the micro LED chip array is bonded with the bonding metal 61 on the target substrate 60. Therefore, the problems of displacement and yield in the traditional mode that the chip array is transferred after being prepared are solved. The transfer yield is obviously improved, and the displacement risk is reduced.
Another embodiment of the present application further provides a method for manufacturing a micro LED display device, wherein the processes of manufacturing the micro LED chips and transferring the large amount of the micro LED chips are implemented by the method for manufacturing the micro LED chips described in the above embodiments, so that the chips with higher yield are obtained, and the display effect of the micro LED display device is improved.
Another embodiment of the present application further provides a micro LED display device, which includes a display panel, and the display panel can be manufactured by the method for manufacturing a micro LED chip according to any of the above embodiments. The display panel may be a display panel in a setting such as a mobile phone, a computer, a television, an intelligent wearable display device, and the like, which is not particularly limited in this embodiment.
The micro LED display device provided by the embodiment is manufactured by adopting the manufacturing method of the micro LED chip, so that the micro LED display device has the advantages of high yield and good display effect.
In summary, the embodiment of the present application provides a method for manufacturing a micro LED chip, a method for manufacturing a micro LED display device, and a micro LED display device, by providing a first transfer substrate 30 and a second transfer substrate 40, first attaching the epitaxial layer 20 on the surface of the substrate 10 to the first transfer substrate 30, and peeling the substrate 10 from the epitaxial layer 20. And then, attaching the side of the epitaxial layer 20, which is far away from the first transfer substrate 30, to the second transfer substrate 40, and peeling the first transfer substrate 30 from the epitaxial layer 20 to expose the side of the epitaxial layer 20 for chip manufacturing. Finally, manufacturing micro LED chips on one side of the epitaxial layer 20 far away from the second transfer substrate 40 to form a micro LED chip array. Therefore, the problems of chip displacement and loss risk caused by transferring after the chip is manufactured in the traditional mode are solved, and the transfer yield and the transfer accuracy are improved.
The above description is only for various embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily conceive of changes or substitutions within the technical scope of the present application, and all such changes or substitutions are included in the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (10)
1. A manufacturing method of a micro LED chip is characterized by comprising the following steps:
providing a first transfer substrate, and attaching an epitaxial layer on the surface of the substrate to the first transfer substrate;
stripping the substrate from the epitaxial layer;
providing a second transfer substrate, and attaching one side, far away from the first transfer substrate, of the epitaxial layer to the second transfer substrate;
peeling the first transfer substrate from the epitaxial layer to expose one side of the epitaxial layer for chip manufacturing;
and manufacturing a micro LED chip on one side of the epitaxial layer, which is far away from the second transfer substrate, so as to form a micro LED chip array.
2. The method of fabricating a micro LED chip according to claim 1, further comprising:
providing a target substrate provided with a plurality of bonding metals, wherein each bonding metal corresponds to one of the micro LED chips in the array of micro LED chips;
attaching the side, provided with the micro LED chip array, of the epitaxial layer to the side, provided with the bonding metal, of the target substrate so as to bond the corresponding micro LED chip and the bonding metal;
and stripping the second transfer substrate from the epitaxial layer.
3. The method according to claim 1, wherein the epitaxial layer comprises an N-type conductive layer, a quantum well layer and a P-type conductive layer, the N-type conductive layer is laminated on the second transfer substrate, and the step of fabricating the micro LED chip on the side of the epitaxial layer away from the second transfer substrate comprises:
etching the P-type conducting layer and the quantum well layer to expose part of the N-type conducting layer;
forming a P-type electrode pattern on the P-type conducting layer by photoetching, and forming an N-type electrode pattern on the exposed N-type conducting layer by photoetching;
and manufacturing and forming a P-type electrode based on the P-type electrode pattern on the P-type conducting layer, and manufacturing and forming an N-type electrode based on the N-type electrode pattern on the N-type conducting layer to form the micro LED chip.
4. The method of claim 3, wherein the step of forming a P-type electrode pattern on the P-type conductive layer and forming an N-type electrode pattern on the exposed N-type conductive layer comprises:
coating a photoresist layer on the P-type conducting layer and the exposed N-type conducting layer;
exposing and developing the photoresist layer on the P-type conducting layer to expose part of the P-type conducting layer to form a P-type electrode pattern;
and exposing and developing the photoresist layer on the N-type conducting layer to expose part of the N-type conducting layer so as to form an N-type electrode pattern.
5. The method of claim 3, wherein the step of etching the P-type conductive layer and the quantum well layer to expose a portion of the N-type conductive layer comprises:
etching the P-type conducting layer and the quantum well layer and cutting off the surface of the N-type conducting layer to expose part of the N-type conducting layer; or
And etching the P-type conducting layer and the quantum well layer and forming a groove on the N-type conducting layer to expose part of the N-type conducting layer.
6. The method of manufacturing a micro LED chip according to claim 1, wherein a first adhesive layer is disposed on one side of the first transfer substrate;
the step of attaching the epitaxial layer on the surface of the substrate to the first transfer substrate includes:
and attaching the epitaxial layer on the surface of the substrate to the first transfer substrate through the first bonding layer.
7. The method of manufacturing a micro LED chip according to claim 6, wherein a second adhesive layer is disposed on one side of the second transfer substrate;
the step of attaching the side of the epitaxial layer remote from the first transfer substrate to the second transfer substrate includes:
and attaching one side of the epitaxial layer far away from the first transfer substrate to the second transfer substrate through the second bonding layer.
8. The method of claim 7, wherein the step of peeling the first transfer substrate from the epitaxial layer comprises:
and heating or irradiating light to the first adhesive layer on the first transfer substrate, and removing the viscosity of the first adhesive layer and keeping the viscosity of the second adhesive layer to peel the first transfer substrate from the epitaxial layer.
9. A method for manufacturing a micro LED display device, wherein the method for manufacturing a micro LED chip according to any one of claims 1 to 8 is used to transfer and manufacture the chip.
10. A micro LED display device, characterized by being manufactured by the method of claim 9.
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Application publication date: 20200225 |