CN112968106A - Chip transfer method and display device - Google Patents
Chip transfer method and display device Download PDFInfo
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- CN112968106A CN112968106A CN202010809987.7A CN202010809987A CN112968106A CN 112968106 A CN112968106 A CN 112968106A CN 202010809987 A CN202010809987 A CN 202010809987A CN 112968106 A CN112968106 A CN 112968106A
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- 238000000034 method Methods 0.000 title claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 134
- 239000010410 layer Substances 0.000 claims abstract description 115
- 239000000463 material Substances 0.000 claims abstract description 68
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 55
- 230000001052 transient effect Effects 0.000 claims abstract description 49
- 239000003292 glue Substances 0.000 claims abstract description 46
- 239000012790 adhesive layer Substances 0.000 claims abstract description 24
- 229920000642 polymer Polymers 0.000 claims description 23
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000000354 decomposition reaction Methods 0.000 claims description 5
- 239000004640 Melamine resin Substances 0.000 claims description 4
- 229920000877 Melamine resin Polymers 0.000 claims description 4
- 229920001807 Urea-formaldehyde Polymers 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 4
- 239000005011 phenolic resin Substances 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 229920002635 polyurethane Polymers 0.000 claims description 4
- 239000004814 polyurethane Substances 0.000 claims description 4
- 229920002050 silicone resin Polymers 0.000 claims description 4
- 229920006337 unsaturated polyester resin Polymers 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 description 11
- 230000001070 adhesive effect Effects 0.000 description 11
- 238000000197 pyrolysis Methods 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
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- 239000012044 organic layer Substances 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000015843 photosynthesis, light reaction Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
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Abstract
The invention relates to a chip transfer method and a display device. The chip transfer method comprises the following steps: providing a growth substrate, wherein a chip is formed on the surface of the growth substrate, and a first adhesive layer covers the surface of one side, far away from the growth substrate, of the chip; providing a first transient substrate with an uncured first thermosetting material layer covered on the surface, and attaching a first adhesive layer to the first thermosetting material layer; and curing the first thermosetting material layer to enable the concave-convex surface on the first glue layer to be matched with the concave-convex surface of the first thermosetting material layer to generate a leveling layer so as to transfer the chip. The chip transfer method avoids incomplete bonding or falling into a glue material on the surface of another temporary substrate caused by insufficient height of some chips in the pressure bonding and transfer process with another substrate, and ensures successful transfer of the chips.
Description
Technical Field
The invention relates to the technical field of display, in particular to a chip transfer method and a display device.
Background
At present, a key technology faced by the chip transfer technology is to transfer the chip onto the display backplane through a bulk transfer process, and in the prior art, the chip is usually transferred to the first temporary substrate by adhering through a debondable adhesive material, and then the chip is transferred from the first temporary substrate to the second temporary substrate by a similar method, and then the chip is transferred from the second temporary substrate and bound to the backplane.
However, in the process of transferring chips in the prior art, because the adhesive material coated on the temporary substrate is in a flowing state before curing, the thickness after curing often has differences everywhere, so that in the process of pressure bonding and transferring with another substrate, due to the difference of the height of the adhesive material, some chips are normally pressure-adhered, some chips are incompletely adhered due to insufficient height, and some chips are sunk into the adhesive material on the surface of another temporary substrate due to too high height, thereby causing transfer failure.
Disclosure of Invention
In view of the above disadvantages of the prior art, the present application aims to provide a chip transfer method and a display device, and aims to solve the problem that the chip transfer method in the prior art is prone to cause partial chip transfer failure.
A chip transfer method, comprising the steps of:
providing a growth substrate, wherein a chip is formed on the surface of the growth substrate, and a first adhesive layer covers the surface of one side, far away from the growth substrate, of the chip;
providing a first transient substrate with an uncured first thermosetting material layer covered on the surface, and attaching a first adhesive layer and the first thermosetting material layer;
and curing the first thermosetting material layer to enable the concave-convex surface on the first glue layer to be matched with the concave-convex surface of the first thermosetting material layer to generate a leveling layer so as to transfer the chip.
According to the invention, the first glue layer covers the surface of one side of the chip far away from the growth substrate, and the first glue layer is attached to the first thermosetting material layer covered on the first transient substrate, because the first thermosetting material layer is uncured and easy to deform, the shape of the first glue layer corresponds to the height protrusion of the first glue layer after attachment to form a complementary pattern, so that a leveling layer is obtained, the chip arranged on the leveling layer can be positioned on the same horizontal plane, effective attachment and adhesion can be realized under proper attachment pressure, then the first thermosetting material layer is cured after attachment, the situation that some chips are incompletely attached or sink into a glue material on the surface of another temporary substrate due to insufficient height in the pressure attachment and transfer process of the other substrate is avoided, and the successful transfer of the chips is ensured.
Moreover, by adopting the chip transfer method, due to the complementary correspondence of the height and the undulation between the first thermosetting material layer and the first adhesive layer, the chips can be positioned on the same horizontal plane, so that when the chip is bonded with the display back plate, the bonding pressure difference corresponding to the electrode surfaces with different heights, which is caused by the fact that the electrodes of the chips are positioned on different horizontal planes, can be avoided, and the bonding failure caused by the different bonding pressure difference is avoided.
Optionally, the first glue layer is formed by pyrolysis glue, and the decomposition temperature of the pyrolysis glue is higher than the curing temperature of the first thermosetting material layer. The decomposition temperature of the pyrolytic gel is higher than the curing temperature of the first thermosetting material layer, so that the pyrolytic gel is prevented from decomposing when the first thermosetting material layer is cured at high temperature subsequently, and the adhesion to a chip is ensured.
Optionally, the material of the first thermosetting material layer is selected from any one or more of phenol resin, urea resin, melamine resin, unsaturated polyester resin, epoxy resin, silicone resin and polyurethane.
Optionally, the chip is a plurality of chips arranged at intervals, and the step of covering the surface of one side of the chip away from the growth substrate with the first glue layer includes: a retaining wall is arranged between every two adjacent chips, wherein a gap is formed between each chip and each retaining wall; forming a soluble polymer layer on the growth substrate corresponding to the gap; and coating a first adhesive layer on the growth substrate, wherein the first adhesive layer is used for covering the surface of one side of the chip far away from the growth substrate. The retaining wall is formed between the adjacent chips, so that each chip can be separated, mutual influence is avoided, for example, when the chip A is stripped, but the chip B is not stripped, the influence on the chip B when the chip A is irradiated by laser can be avoided by arranging the retaining wall, and the chip B is not influenced when the chip A is stripped; and, through setting up the barricade and can also form light-shielding structure in the position that is got rid of after the barricade is got rid of to prevent the colour mixture between the adjacent chip.
Optionally, the height of the retaining wall is the same as the height of the chip in a direction perpendicular to the growth substrate. Through making the height of barricade the same with the height of chip, not only can make the shading structure of follow-up formation have enough height and prevent the colour mixture between the adjacent chip, can also avoid the barricade too high to cause and fall into the difficulty of peeling off that leads to in first glue film.
Optionally, the height of the soluble polymer layer is less than the height of the retaining wall in a direction perpendicular to the growth substrate. By enabling the height of the soluble polymer layer to be smaller than that of the retaining wall, the situation that the soluble polymer crosses the retaining wall to be connected pairwise can be avoided, and when the soluble polymer layer is selectively stripped, the adjacent chips are affected, and the soluble polymer layer is too high to be trapped in the first glue layer, so that stripping difficulty is caused.
Optionally, after the step of generating the planarization layer, the chip transfer method further includes: peeling the chip from the growth substrate to transfer the chip to the first transient substrate; attaching the side, provided with the chip, of the first transient substrate to the second transient substrate through a second adhesive layer so as to transfer the chip to the second transient substrate; bonding the chip on the second transient substrate with the display backplane to transfer the chip to the display backplane.
Optionally, the step of attaching the side of the first transient substrate having the chip to the second transient substrate through the second adhesive layer includes: coating a second glue layer on the exposed side of the chip on the first transient state substrate; providing a second transient substrate with an uncured second thermosetting material layer covered on the surface, attaching the second thermosetting material layer to the second adhesive layer, and curing the second thermosetting material layer; and peeling off the chip on the first transient substrate to transfer the chip to the second transient substrate. By adopting the second glue layer and the second thermosetting material layer, the shape of the second thermosetting material layer after being attached corresponds to the height protrusion of the second glue layer due to the fact that the second thermosetting material layer is not cured and is easy to deform, complementary patterns are formed, and the chips can be further guaranteed to be located on the same horizontal plane.
Optionally, after the step of peeling the chip on the first transient substrate, the step of transferring the chip on the second transient substrate onto the display backplane comprises: forming an electrode on the exposed surface of the chip; providing a display back plate with a contact pad on one side surface, and bonding the electrode of the chip on the second transient substrate with the contact pad; and stripping the second transient substrate to transfer the chip to the display back plate.
Based on the same inventive concept, the invention also provides a display device, which comprises a display backboard and a chip positioned on the display backboard, wherein the chip is transferred to the display backboard by adopting the chip transfer method.
In the invention, the chips are transferred to the display back plate by adopting the chip transfer method, so that the chips arranged on the display back plate can be positioned on the same horizontal plane, the phenomenon that some chips are incompletely bonded or sink into a glue material on the surface of another temporary substrate due to insufficient height in the pressure bonding and transferring process with another substrate is avoided, the successful transfer of the chips is ensured, and the luminous efficiency of the display device is ensured.
Drawings
FIG. 1 is a flow chart illustrating a chip transfer method according to an embodiment of the invention;
fig. 2 is a schematic structural diagram illustrating a growth substrate with a chip formed on a surface thereof according to a chip transfer method provided in an embodiment of the invention;
fig. 3 is a schematic structural view of the chip shown in fig. 2 after a first adhesive layer is covered on a surface of a side of the chip away from the growth substrate;
fig. 4 is a schematic structural diagram of a first transient substrate with a first thermosetting material layer covered on the surface, and the first thermosetting material layer is cured after the first adhesive layer shown in fig. 3 is attached to the first thermosetting material layer;
fig. 5 and fig. 6 are schematic structural diagrams of the growth substrate shown in fig. 4 after the chip is peeled off by using a laser peeling process;
fig. 7 is a schematic structural view of a second transient substrate covered with a second thermosetting material layer on the surface, and after the second adhesive layer shown in fig. 5 is attached to the second transient substrate, the second thermosetting material is cured;
FIG. 8 is a schematic view of the structure of the chip shown in FIG. 7 after being peeled off from the first adhesive layer;
fig. 9 is a schematic view of the structure of fig. 8 after electrodes are formed on the exposed surface of the chip.
Description of reference numerals:
10-a growth substrate; 20-chip; 30-retaining wall; a 40-soluble polymer layer; 50-a first glue layer; 60-a first layer of thermosetting material; 70-a first transient substrate; 80-a second glue layer; 90-a second layer of thermosetting material; 100-a second transient substrate; 110-electrodes.
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present application are given in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
As described in the background section, in the prior art, since the adhesive material coated on the temporary substrate flows before curing, the thickness after curing often varies everywhere, so that some chips may not adhere completely due to insufficient height during the pressure bonding transfer process with another substrate, and some chips may sink into the adhesive material on the surface of another temporary substrate due to too high height, thereby causing transfer failure.
Based on this, the present application intends to provide a solution to the above technical problem, the details of which will be explained in the following embodiments.
The inventors of the present application have studied in view of the above problems and have proposed a chip transfer method, as shown in fig. 1.
Exemplary embodiments of a chip transfer method provided according to the present application will be described in more detail below with reference to the accompanying drawings. These exemplary embodiments may, however, be embodied in many different forms and should not be construed as limited to only the embodiments set forth herein. It should be understood that these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of these exemplary embodiments to those skilled in the art.
First, step S201 is performed: providing a growth substrate, forming a chip on the surface of the growth substrate as shown in fig. 2, and covering a first glue layer 50 on the surface of the chip 20 away from the growth substrate 10 as shown in fig. 3. The growth substrate 10 may be a rigid substrate such as a glass plate, a quartz plate, a sapphire substrate, and the like.
In the above steps, a photoresist or a pyrolytic glue may be coated on the growth substrate 10 to form the first glue layer 50 covering the chip 20.
In some embodiments, the first glue layer 50 covering the chip 20 is formed by using pyrolytic glue, and the decomposition temperature of the pyrolytic glue is higher than the curing temperature of the first thermosetting material layer 60, so as to ensure that the pyrolytic glue is not decomposed when the first thermosetting material layer 60 is subsequently cured at high temperature, thereby ensuring the adhesion to the chip 20.
In some embodiments, the manner of forming the above-described chip 20 includes: an LED epitaxial film is completed on the growth substrate 10, and is cut to form a plurality of individual LED chips 20.
In some embodiments, the step of covering the first adhesive layer 50 on the surface of the chip 20 away from the growth substrate 10 includes disposing a retaining wall 30 between adjacent chips 20, wherein a gap is formed between each chip 20 and the retaining wall 30; forming a soluble polymer layer 40 on the growth substrate 10 corresponding to the voids, as shown in fig. 2; the first glue layer 50 is coated on the growth substrate 10, and the first glue layer 50 also covers the surface of the retaining wall 30 away from the growth substrate 10 and the surface of the soluble polymer layer 40 away from the growth substrate 10, as shown in fig. 3.
In the above embodiment, the unevenness of the surface of the first adhesive layer 50 can be reduced by planarizing the soluble polymer layer 40 in the gap between the chip 20 and the retaining wall 30, so that the first adhesive layer 50 coated on the growth substrate 10 has better levelness.
In the above embodiment, the soluble polymer layer 40 may be a polyimide layer. But not limited to the above-mentioned optional species, the skilled person can reasonably select the species of the above-mentioned soluble polymer layer 40 according to the prior art, and the above-mentioned soluble polymer layer 40 can also be an acrylic organic layer.
In the above embodiment, in order to avoid the peeling difficulty caused by the dam 30 being too high to be trapped in the first glue layer 50, it is preferable that the height of the dam 30 is the same as the height of the chip 20 in the direction perpendicular to the growth substrate 10.
In the above embodiment, in order to avoid the peeling difficulty caused by the soluble polymer layer 40 being too high to be trapped in the first glue layer 50, it is preferable that the height of the soluble polymer layer 40 is smaller than the height of the retaining wall 30 in the direction perpendicular to the growth substrate 10.
Then, step S203 is performed: a first temporary substrate with an uncured first thermosetting material layer covered on the surface is provided, and a first glue layer is attached to the first thermosetting material layer, as shown in fig. 4.
The first transient substrate 70 may be a rigid substrate, such as a glass plate, a quartz plate, a sapphire substrate, and the like.
In the above step S203, the material forming the first thermosetting material layer 60 may be selected from any one or more of phenol resin, urea resin, melamine resin, unsaturated polyester resin, epoxy resin, silicone resin, and polyurethane. But not limited to the above-mentioned alternative categories, and those skilled in the art can reasonably select the category of the first thermosetting material layer 60 according to the prior art.
Then, step S205 is performed: and curing the first thermosetting material layer to enable the concave-convex surface on the first glue layer to be matched with the concave-convex surface of the first thermosetting material layer to generate a leveling layer so as to transfer the chip.
In the above step S205, by performing the heat treatment on the uncured first thermosetting material layer 60 to cure it, the curing temperature of the first thermosetting material layer 60 can be set appropriately according to the specific material type thereof.
After step S205 is completed, the chip 20 may be peeled off from the growth substrate 10 to transfer the chip 20 onto the first transient substrate 70, as shown in fig. 5 and 6.
In some embodiments, the chips 20 on the growth substrate 10 are peeled off using a laser lift-off process (LLO), as shown in fig. 5.
In the above embodiments, the lift-off chip 20 may use lasers with wavelengths of 266nm, 355nm, 532nm, etc., and in order to correspond to the pixels of the bonded display backplane, a selective lift-off process may be used to lift off the chip 20 corresponding to the pixels of the display backplane.
In the above embodiment, when the retaining walls 30 and the soluble polymer layer 40 are disposed between the adjacent chips 20, the soluble polymer layer 40 is peeled off from the growth substrate 10, so that the chips 20 and the soluble polymer layer 40 are simultaneously transferred onto the first temporary substrate 70, the soluble polymer layer 40 may be polyimide, the polyimide may be peeled off by using a 308nm wavelength laser, and the retaining walls 30 cannot be peeled off in the laser peeling process, so that the polyimide may remain on the growth substrate 10, and a gap may be formed between the adjacent chips 20.
After the step of transferring the chip 20 onto the first temporary substrate 70, a surface of the chip 20 on a side away from the first temporary substrate 70 is exposed, as shown in fig. 6, and the side of the first temporary substrate 70 having the chip 20 is attached to the second temporary substrate 100 through the second glue layer 80, so as to transfer the chip 20 onto the second temporary substrate 100, as shown in fig. 7 and 8.
In some embodiments, the step of attaching the side of the first temporary substrate 70 having the chip 20 to the second temporary substrate 100 through the second adhesive layer 80 includes: coating a second glue layer 80 on the exposed side of the chip 20 on the first transient substrate 70; providing a second temporary substrate 100 covered with an uncured second thermosetting material layer 90, attaching the second thermosetting material layer 90 to the second glue layer 80, and curing the second thermosetting material layer 90, as shown in fig. 7; the chip 20 on the first transient substrate 70 is peeled off to transfer the chip 20 onto the second transient substrate 100, as shown in fig. 8.
In the above embodiment, when the retaining walls 30 are formed between the adjacent chips 20 in the previous step, after the chips 20 are transferred onto the first temporary substrate 70, the retaining walls 30 will remain on the growth substrate 10, so that a gap is formed between the adjacent chips 20, and at this time, a portion of the second glue layer 80 will fill in the gap to form a light shielding structure, as shown in fig. 7 and 8, for preventing color mixing between the adjacent chips.
In the above embodiment, a photolysis adhesive or a pyrolysis adhesive may be coated on the growth substrate 10 to form the second adhesive layer 80 covering the chip 20, and when the pyrolysis adhesive is used to form the first adhesive layer 50 covering the chip 20, the decomposition temperature of the pyrolysis adhesive is higher than the curing temperature of the second thermosetting material, so as to ensure that the pyrolysis adhesive is not decomposed when the second thermosetting material is subsequently cured at a high temperature, thereby ensuring the adhesion to the chip 20.
In the above embodiments, the second thermosetting material used may also be selected from any one or more of phenol resin, urea resin, melamine resin, unsaturated polyester resin, epoxy resin, silicone resin, and polyurethane. But not limited to the above-mentioned alternative classes, the skilled person can make a reasonable choice of the class of the second thermosetting material according to the prior art.
After the step of transferring the chip 20 onto the second transient substrate 100, a side surface of the chip 20 remote from the second transient substrate 100 is exposed, and the chip 20 on the second transient substrate 100 may be bonded with a display backplane to transfer the chip 20 onto the display backplane.
In some embodiments, the step of transferring the chip 20 on the second transient substrate 100 onto the display backplane after the step of peeling off the chip 20 on the first transient substrate 70 comprises: forming an electrode 110 on the exposed surface of the chip 20, as shown in fig. 9; providing a display back plate with a contact pad on one side surface, and bonding the electrode of the chip 20 on the second transient substrate 100 with the contact pad; the second transient substrate 100 is peeled off to transfer the chip 20 onto the display backplane.
In the above embodiment, when the retaining wall 30 and the soluble polymer layer 40 are disposed between the adjacent chips 20, after the step of forming the electrode 110 on the exposed surface of the chip 20, the soluble polymer layer 40 is removed, and then the electrode 110 is connected to the display backplane.
In some embodiments, the growth substrate 10 is in plurality, the chips 20 on the plurality of growth substrates 10 are transferred onto the first temporary substrate 70, the chips 20 are transferred onto the second temporary substrate 100, and then the electrodes 110 are formed on the exposed surfaces of the chips 20.
Based on the same inventive concept, the invention also provides a display device which comprises a display backboard and a chip transferred onto the display backboard by adopting the chip transfer method.
It should be noted that the chip in the present application is a Micro LED (Micro light emitting diode), and may also be a nano-scale LED.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (10)
1. A method of chip transfer, comprising:
providing a growth substrate, wherein a chip is formed on the surface of the growth substrate, and a first glue layer covers the surface of one side, far away from the growth substrate, of the chip;
providing a first transient substrate with an uncured first thermosetting material layer covered on the surface, and attaching the first glue layer and the first thermosetting material layer;
and curing the first thermosetting material layer to enable the concave-convex surface on the first glue layer to be matched with the concave-convex surface of the first thermosetting material layer to generate a leveling layer so as to transfer the chip.
2. The chip transfer method according to claim 1, wherein the first glue layer is formed by a pyrolytic glue, and the decomposition temperature of the pyrolytic glue is higher than the curing temperature of the first thermosetting material layer.
3. The chip transfer method according to claim 1, wherein the material of the first thermosetting material layer is selected from any one or more of phenol resin, urea resin, melamine resin, unsaturated polyester resin, epoxy resin, silicone resin, and polyurethane.
4. The chip transfer method according to any one of claims 1 to 3, wherein the chips are arranged at intervals, and the step of covering the first glue layer on the surface of one side of the chip away from the growth substrate comprises:
a retaining wall is arranged between every two adjacent chips, wherein a gap is formed between each chip and each retaining wall;
forming a soluble polymer layer on the growth substrate corresponding to the gap;
and coating the first adhesive layer on the growth substrate, wherein the first adhesive layer is used for covering the surface of one side of the chip, which is far away from the growth substrate.
5. The chip transfer method according to claim 4, wherein the height of the dam is the same as the height of the chip in a direction perpendicular to the growth substrate.
6. The chip transfer method according to claim 4, wherein the height of the soluble polymer layer is smaller than the height of the dam in a direction perpendicular to the growth substrate.
7. The chip transfer method according to any one of claims 1 to 3, wherein after the step of generating the planarizing layer, the chip transfer method further comprises:
peeling the chip from the growth substrate to transfer the chip to the first transient substrate;
attaching the side, provided with the chip, of the first transient substrate to a second transient substrate through a second adhesive layer so as to transfer the chip to the second transient substrate;
bonding a chip on the second transient substrate with a display backplane to transfer the chip to the display backplane.
8. The chip transfer method according to claim 7, wherein the step of attaching the side of the first temporary substrate having the chip to the second temporary substrate through a second adhesive layer comprises:
coating a second glue layer on the exposed side of the chip on the first transient state substrate;
providing a second transient substrate with an uncured second thermosetting material layer covered on the surface, attaching the second thermosetting material layer to the second glue layer, and curing the second thermosetting material layer;
peeling the chip on the first transient substrate to transfer the chip onto the second transient substrate.
9. The chip transfer method of claim 7, wherein the step of transferring the chips on the second transient substrate onto the display backplane after the step of peeling the chips on the first transient substrate comprises:
forming an electrode on an exposed surface of the chip;
providing a display back plate with a contact pad on one side surface, and bonding the electrode of the chip on the second transient substrate with the contact pad;
peeling the second transient substrate to transfer the chip to the display backplane.
10. A display device comprising a display backplane and a chip disposed on the display backplane, wherein the chip is transferred onto the display backplane using the chip transfer method of any of claims 1-9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010809987.7A CN112968106B (en) | 2020-08-12 | 2020-08-12 | Chip transfer method and display device |
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| CN113611786A (en) * | 2021-08-02 | 2021-11-05 | 东莞市中麒光电技术有限公司 | LED chip bulk transfer method with high peeling yield and convenient film pouring |
| CN113764557A (en) * | 2021-08-31 | 2021-12-07 | 北海惠科光电技术有限公司 | LED chip, display panel and transfer method of LED chip |
| CN114023849A (en) * | 2021-07-27 | 2022-02-08 | 重庆康佳光电技术研究院有限公司 | Chip transfer method and display device |
| CN114613894A (en) * | 2022-03-15 | 2022-06-10 | 韦尔通(厦门)科技股份有限公司 | Encapsulation transfer method for Mini LED or Micro LED |
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| CN113764557B (en) * | 2021-08-31 | 2024-08-06 | 北海惠科光电技术有限公司 | LED chip, display panel and transfer method of LED chip |
| WO2023087921A1 (en) * | 2021-11-16 | 2023-05-25 | 重庆康佳光电技术研究院有限公司 | Chip transfer method |
| CN114613894A (en) * | 2022-03-15 | 2022-06-10 | 韦尔通(厦门)科技股份有限公司 | Encapsulation transfer method for Mini LED or Micro LED |
| CN114613894B (en) * | 2022-03-15 | 2023-06-27 | 韦尔通科技股份有限公司 | Encapsulation transfer method for Mini LED or Micro LED |
| CN115469481A (en) * | 2022-09-15 | 2022-12-13 | 惠科股份有限公司 | Backlight module, preparation method thereof, display module and electronic equipment |
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