CN113764557A - LED chip, display panel and transfer method of LED chip - Google Patents

LED chip, display panel and transfer method of LED chip Download PDF

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Publication number
CN113764557A
CN113764557A CN202111009056.XA CN202111009056A CN113764557A CN 113764557 A CN113764557 A CN 113764557A CN 202111009056 A CN202111009056 A CN 202111009056A CN 113764557 A CN113764557 A CN 113764557A
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Prior art keywords
chip
led chip
step structure
protective layer
main body
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Chinese (zh)
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蒲洋
洪文进
许哲豪
康报虹
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HKC Co Ltd
Beihai HKC Optoelectronics Technology Co Ltd
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HKC Co Ltd
Beihai HKC Optoelectronics Technology Co Ltd
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Priority to CN202111009056.XA priority Critical patent/CN113764557A/en
Publication of CN113764557A publication Critical patent/CN113764557A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0083—Processes for devices with an active region comprising only II-VI compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

The application is suitable for the technical field of display, and provides an LED chip, a display panel and a transfer method of the LED chip. The LED chip comprises a chip main body with a first surface, wherein the first surface is one surface used for emitting light in the upper surface and the lower surface of the chip main body; the step structure and the chip main body are integrally formed. The display panel comprises a driving substrate and an LED chip, and the chip main body is electrically connected with the driving substrate through an electrode. The application also provides a transfer method of the LED chip. The application also provides the LED chip, the display panel and the transfer method of the LED chip, and the technical problem that the LED chip is not easy to peel off when the surface of the LED chip is coated with the inorganic protective layer is solved.

Description

LED chip, display panel and transfer method of LED chip
Technical Field
The application belongs to the technical field of display, and particularly relates to an LED chip, a display panel and a transfer method of the LED chip.
Background
With the development of the electro-optical display technology and the semiconductor manufacturing technology, the display technology has been developed from the liquid crystal display technology to the organic light emitting diode display technology, even the micro light emitting diode chip display technology. The micro light emitting diode chip has the characteristics of small size, high integration level, self-luminescence and the like, and has greater advantages in the aspects of brightness, resolution, contrast, energy consumption, service life, response speed, thermal stability and the like compared with a liquid crystal display technology and an organic light emitting diode display technology in the aspect of display.
In the process of manufacturing the micro LED display device, a Light-Emitting Diode (LED) chip formed on a growth substrate needs to be transferred to a driving backplane. In the meantime, in order to protect the LED chip during the transfer process, a protective layer is generally formed on the surface of the LED chip, and when the protective layer is made of an inorganic material such as SiOx (silicon oxide), the protective layer cannot be separated from the growth substrate by laser lift-off, which may result in the transfer failure of the LED chip.
Disclosure of Invention
The application aims to provide an LED chip, a display panel and a transfer method of the LED chip, which include but are not limited to solving the technical problem that the LED chip is not easy to peel off when the surface of the LED chip is coated with an inorganic protective layer.
The LED chip comprises a chip main body with a first surface, wherein the first surface is the surface of the chip main body used for emitting light, the LED chip further comprises a step structure, the step structure is arranged along the circumferential direction of the chip main body, the circumferential direction of the chip main body is arranged on the side surface of the chip main body, and the step structure is located on the side surface close to one side of the first surface.
In an alternative embodiment, the step structure is integrally formed with the chip body.
In an alternative embodiment, the height of the step structure is less than 1/2 the height of the chip body.
In an alternative embodiment, the height of the step structure is 10-100 nm.
In an alternative embodiment, the step structure has a width of 1.5-2.5 μm.
In a second aspect, a display panel is provided, which includes a driving substrate and the LED chip, the chip main body further has a second surface disposed opposite to the first surface, the LED chip further includes an electrode fixedly mounted on the second surface, and the chip main body is electrically connected to the driving substrate through the electrode;
the surface of the chip main body is provided with a protective layer, and the protective layer covering area is all areas except the first surface, the electrode covering area and the step structure covering area in the surface of the chip main body.
The embodiment of the application provides an LED chip and display panel, set up the outer peripheral face that encircles the chip main part and connect in the stair structure of this outer peripheral face, when making at the surperficial preparation protective layer of LED chip, can only prepare in the region above the stair structure, and then avoided protective layer and growth substrate contact, thereby when making to adopt the laser mode of peeling off to peel off the LED chip, can not receive the influence of protective layer, guarantee going on smoothly that the LED chip peeled off, and avoided the LED chip to peel off the production of foreign matter in the operation, and then improved the product yield in the LED chip shifts the operation. The LED chip provided by the embodiment of the application is not only suitable for the situation that the protective layer is an inorganic layer, but also suitable for the situation that the protective layer is an organic layer, and has a wide application range.
In a third aspect, a method for transferring LED chips is provided, which includes the following steps:
providing a growth substrate;
preparing an epitaxial layer on the growth substrate;
preparing the LED chip, wherein the LED chip also comprises an electrode fixedly arranged on the chip main body;
preparing a protective layer, wherein the protective layer is used for coating an exposed area of the chip main body, which is positioned on one side of the step structure away from the first surface, and the exposed area is an area except the electrode covering area;
and peeling and transferring the assembly consisting of the LED chip and the protective layer.
In an alternative embodiment, the width of the step structure is greater than or equal to the thickness of the protective layer.
According to the LED chip transfer method provided by the embodiment of the application, the LED chips provided by the above embodiments are utilized, so that when the protective layer is prepared on the surface of the LED chip, the protective layer can be prepared only in the area above the step structure of the LED chip, and further the contact between the protective layer and the growth substrate is avoided, so that when the LED chip is stripped by adopting a laser stripping mode, the influence of the protective layer is avoided, the smooth stripping of the LED chip is ensured, the generation of foreign matters in the stripping operation of the LED chip is avoided, and further the product yield in the LED chip transfer operation is improved. The LED chip transfer method provided by the embodiment of the application is not only suitable for the case that the protective layer is an inorganic layer, but also suitable for the case that the protective layer is an organic layer, and has a wide application range.
In a fourth aspect, a method for transferring LED chips is provided, which includes the following steps:
providing a growth substrate;
preparing an epitaxial layer on the growth substrate;
preparing an LED chip, wherein the LED chip comprises a chip main body and an electrode fixedly arranged on the chip main body;
preparing a step structure connected to a side surface of the chip body along a circumferential direction of the chip body on the growth substrate;
preparing a protective layer, and enabling the protective layer to cover the exposed area of the chip main body; the exposed area is all areas except the first surface of the chip main body, the electrode covering area and the step structure covering area;
peeling and transferring an assembly composed of the LED chip, the protective layer and the step structure;
and removing the step structure.
In an alternative embodiment, when the step structure and the protective layer are both organic layers, the method for transferring the LED chip further comprises the following steps between the step of preparing the step structure and the step of preparing the protective layer:
preparing an isolation layer on the step structure; the isolation layer is an inorganic layer.
According to the LED chip transfer method, before the protective layer is prepared, the step structure is prepared on the periphery of the LED chip, so that when the protective layer is prepared on the surface of the LED chip, the LED chip can be prepared only in the exposed area above the step structure, and the contact between the protective layer and the growth substrate is avoided, so that when the LED chip is stripped in a laser stripping mode, the influence of the protective layer is avoided, the smooth stripping of the LED chip is ensured, the generation of foreign matters in the stripping operation of the LED chip is avoided, and the product yield in the LED chip transfer operation is improved. The LED chip transfer method provided by the embodiment of the application is not only suitable for the case that the protective layer is an inorganic layer, but also suitable for the case that the protective layer is an organic layer, and has a wide application range. By adopting the transfer method of the LED chip provided in this embodiment, compared with the transfer method of the LED chip shown in the first embodiment, the chip main body can adopt the original shape and pattern.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed to be used in the description of the embodiments of the present application will be briefly described below, and it is obvious that the drawings described below are only some embodiments of the present application, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic perspective view of an LED chip provided in an embodiment of the present application at a first viewing angle;
fig. 2 is a schematic perspective view of an LED chip provided in an embodiment of the present application at a second viewing angle;
FIG. 3 is a schematic cross-sectional view of an LED chip when the step structure in FIG. 1 adopts a first implementation manner;
FIG. 4 is a schematic cross-sectional view of the LED chip shown in FIG. 3 with an electrode and a protective layer formed thereon;
FIG. 5 is a schematic cross-sectional view of an LED chip when a second implementation is adopted for the step structure in FIG. 1;
FIG. 6 is a schematic cross-sectional view of the LED chip shown in FIG. 5 with an electrode and a protective layer formed thereon;
fig. 7 is a schematic cross-sectional structural diagram of a display panel provided in the second embodiment of the present application;
fig. 8 is a schematic flowchart of a transfer method of an LED chip according to a third embodiment of the present application;
fig. 9(a) is a schematic structural view of the structure prepared in step S2 in fig. 8;
fig. 9(b) is a schematic structural view of the structure prepared in step S3 in fig. 8;
fig. 9(c) is a schematic structural view of the structure prepared in step S4 in fig. 8;
fig. 9(d) is a schematic structural view of the structure prepared in step S5 in fig. 8;
fig. 10 is a schematic flowchart of a transfer method of an LED chip according to a fourth embodiment of the present application;
fig. 11(a) is a schematic structural view of the structure prepared in step S2 in fig. 10;
fig. 11(b) is a schematic structural view of the structure prepared in step S3 in fig. 10;
fig. 11(c) is a schematic structural view of the structure prepared in step S4 in fig. 10;
fig. 11(d) is a schematic structural view of the structure prepared in step S5 in fig. 10;
fig. 11(e) is a schematic structural view of the structure prepared in step S6 in fig. 10;
fig. 11(f) is a schematic structural view of the structure prepared in step S7 in fig. 10;
fig. 12 is a schematic flowchart of a transfer method of an LED chip provided in the fifth embodiment of the present application;
fig. 13(a) is a schematic structural view of the structure prepared in step S4' in fig. 12;
fig. 13(b) is a schematic structural view of the structure prepared in step S5 in fig. 12;
fig. 13(c) is a schematic structural view of the structure prepared in step S6 in fig. 12;
fig. 13(d) is a schematic structural view of the structure prepared in step S7 in fig. 12.
Description of reference numerals:
100. a chip body; 110. a second face; 120. a first side; 200. an electrode; 300. a step structure; 400. a protective layer; 500. a drive substrate; 600. a growth substrate; 700. an epitaxial layer; 800. an isolation layer.
Detailed Description
Reference will now be made in detail to embodiments of the present application, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary and intended to be used for explaining the present application and should not be construed as limiting the present application.
In the description of the present application, it is to be understood that the terms "length," "width," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like, as used herein, refer to an orientation or positional relationship indicated in the drawings, which is for convenience and simplicity of description, and does not indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and thus, is not to be considered as limiting.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.
In this application, unless expressly stated or limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can include, for example, fixed connections, removable connections, or integral parts; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is described in further detail below with reference to the accompanying drawings and embodiments.
Example one
Referring to fig. 1 and 2, in the present embodiment, an LED chip is provided, which includes a chip main body 100 having a first surface 120. Specifically, the first surface 120 is one of the upper surface and the lower surface of the chip body 100 for emitting light.
The LED chip further includes a step structure 300. The step structure 300 is disposed on a side surface of the chip body 100 along a circumferential direction of the chip body 100, and is located on a side surface close to the first face 120.
There are various ways of disposing the step structure 300. For ease of understanding, reference will now be made to:
in a first implementation, as shown in fig. 3, the step structure 300 may be prepared after the chip body 100 is molded, and the material used may be the same as or different from the material used for the chip body 100. At this time, when the protection layer 400 is prepared, the electrode 200 may be firstly mounted on the chip body 100, and then the protection layer may be prepared on the exposed region of the chip body 100 on the side of the step structure 300 far away from the first surface 120, so as to form the structure shown in fig. 4. The exposed region referred to herein is a region other than the region covered by the electrode 200.
In a second implementation manner, as shown in fig. 5, the step structure 300 is integrally formed with the chip main body 100, that is, a convex edge which protrudes outward and has a contour matched with a contour of an outer peripheral surface of the chip main body 100 is formed on a side of the chip main body 100 close to the first surface 120, and the convex edge forms the step structure 300. By adopting the mode, the processing is convenient, and the production speed of the product is further improved. At this time, when the protection layer 400 is prepared, the electrode 200 may be firstly mounted on the chip main body 100, and then the protection layer may be prepared on the exposed region of the chip main body located on the side of the step structure far from the first surface, so as to form the structure shown in fig. 6. The exposed region referred to herein is a region other than the region covered by the electrode 200.
Of course, in addition to the above two implementation manners, the step structure 300 may be disposed on the side surface of the chip main body in other manners, which is not limited herein. However, no matter which embodiment of the above-mentioned method is used for preparing the step structure 300, the step structure 300 can be used as a supporting platform at the bottom end of the protection layer 400, so that when the protection layer 400 is prepared on the surface of the LED chip provided by the present application, the step structure 300 can be prepared only on the upper surface of the step structure 300 and the surface of the chip main body 100 above the step structure 300, and does not need to contact the growth substrate 600.
The embodiment of the application provides an LED chip, set up the outer peripheral face that encircles chip main part 100 and connect in the stair structure 300 of this outer peripheral face, when making preparation protective layer 400 on the surface of LED chip, can only prepare in the region above stair structure 300, and then avoided protective layer 400 and growth substrate 600 contact, thereby when making to adopt the laser mode of peeling off to peel off the LED chip, can not receive protective layer 400's influence, guarantee going on smoothly that the LED chip peeled off, and avoided the LED chip to peel off the production of foreign matter in the operation, and then improved the product yield in the LED chip transfer operation. The LED chip provided in the embodiment of the present application is suitable for the case where the protection layer 400 is an inorganic layer, and is also suitable for the case where the protection layer 400 is an organic layer, and the application range is wide.
Height h of the step structure 3001The protection area of the LED chip, i.e. the area covered by the protection layer 400, is requiredThe size of the domain. Referring to fig. 3 and 5, in an alternative embodiment, the height h of the step structure 3001Is smaller than the height h of the chip body 10021/2 of (1). In this way, the protective layer 400 can still cover most of the outer peripheral surface of the chip main body 100, and the protective effect of the chip main body 100 is ensured to be good.
To further reduce the adverse effect of the step structure 300 arrangement on the protective layer 400 arrangement, in an alternative embodiment, the height h of the step structure 3001Is 10-100 nm.
In order to prevent the protective layer 400 formed on the chip body 100 from contacting the growth substrate 600, as shown in fig. 3 to 6, the width a of the step structure 300 needs to be greater than or equal to the thickness h of the protective layer 4003In an alternative embodiment, the width of the step structure 300 is 1.5-2.5 μm, typically around 2 μm.
Example two
Referring to fig. 7, in the present embodiment, a display panel is provided, which includes a driving substrate 500 and LED chips. The chip body 100 also has a second face 110 disposed opposite the first face 120. The LED chip further includes an electrode 200 fixedly mounted on the second face 110. The chip body 100 is electrically connected to the driving substrate 500 through the electrodes 200. Specifically, a conductive layer is formed on the second surface 110 of the chip body 100, and the electrode 200 is generally electrically connected and fixed to the conductive layer on the second surface 110 by soldering.
Specifically, after the LED chip is peeled off from the growth substrate 600, the electrode 200 of the LED chip is electrically connected to the driving substrate 500 by soldering, so as to electrically connect the LED chip and the driving substrate 500. A plurality of LED chips may be disposed on one driving substrate 500, and the light emitting colors of the LED chips may be the same or different, which is not limited herein.
Wherein a protection layer 400 is formed on the surface of the chip body 100. The protective layer 400 covers all regions of the surface of the chip body 100 except the first face 120, the electrode 200 and the step structure 300. Therefore, the chip main body 100 can be conveniently stripped from the growth substrate 600, the patterns on the chip main body 100 are protected, and the stability of the LED chip structure is ensured.
The display panel provided by the embodiment of the application comprises the LED chips provided by the above embodiments. The LED chip has the same structural features as the LED chips in the above embodiments, and the functions thereof are the same, which are not described herein again.
EXAMPLE III
Referring to fig. 8, in the present embodiment, a method for transferring an LED chip is provided, which includes the following steps:
and S1, providing the growth substrate 600.
Specifically, the material of the growth substrate 600 may be sapphire (Al)2O3) Any one or more of silicon (Si), silicon carbide (SiC), gallium arsenide (GaAs), aluminum nitride (AlN), zinc oxide (ZnO), etc., may be selected according to the requirements of the device and the LED chip, and is not limited herein.
S2, an epitaxial layer 700 is prepared on the growth substrate 600, as shown in fig. 9 (a).
Specifically, the epitaxial layer 700 may be prepared by Metal Organic Chemical Vapor Deposition (MOCVD), and the material of the epitaxial layer 700 may be any one or more of GaP, GaN, ZnO, and the like.
S3, preparing an LED chip, wherein the LED chip further comprises an electrode 200 fixedly mounted on the chip body 100, as shown in fig. 9 (b).
Specifically, a pattern is formed by coating photoresist, exposing, developing, etching, and removing the photoresist, so as to divide the entire epitaxial layer 700 into at least one LED epitaxial wafer. The bottom of the LED epitaxial wafer is retained with a step structure 300 with a certain height. The electrode 200 is then mounted on the second surface 110 of the chip body 100.
S4, preparing the protection layer 400, so that the protection layer 400 covers the exposed region of the chip main body 100 on the side of the step structure 300 away from the first surface 120, as shown in fig. 9 (c). The upper side here is a region located above the first surface 120 of the chip main body 100 in the perspective shown in fig. 9 (c). The exposed area is an area other than the area covered by the electrode 200.
In particular toThe material of the protection layer 400 may be organic material, such as Polyimide (PI), polymethyl methacrylate (PMMA), etc.; or inorganic materials such as alumina (Al)2O3) Silicon nitride (SiN)x) Silicon oxide (SiO)x) And the like. When the material of the protection layer 400 is an organic material, the protection layer 400 may be formed by coating. When the material of the protection layer 400 is silicon nitride (SiN)x) Or silicon oxide (SiO)x) In this case, the protection layer 400 can be formed by Vapor phase reaction (CVD) film formation, photolithography, etching, or the like. When the material of the passivation layer 400 is alumina (Al)2O3) In this case, the passivation layer 400 can be formed by using an Atomic Layer Deposition (ALD) technique.
S5, peeling off and transferring the assembly of the LED chip and the protective layer 400, as shown in fig. 9 (d).
Specifically, the assembly of the LED chip and the protection layer 400 may be peeled off from the growth substrate 600 by laser lift-off, and then the assembly of the LED chip and the protection layer 400 may be transferred to a target substrate.
According to the LED chip transfer method provided by the embodiment of the application, the LED chips provided by the above embodiments are utilized, so that when the protective layer 400 is prepared on the surface of the LED chip, the protective layer 400 can be prepared only in the area above the step structure 300 of the LED chip, and further the contact between the protective layer 400 and the growth substrate 600 is avoided, so that when the LED chip is stripped by adopting a laser stripping mode, the influence of the protective layer 400 is avoided, the smooth stripping of the LED chip is ensured, the generation of foreign matters in the stripping operation of the LED chip is avoided, and further the product yield in the LED chip transfer operation is improved. The method for transferring the LED chip provided by the embodiment of the application is not only suitable for the case that the protection layer 400 is an inorganic layer, but also suitable for the case that the protection layer 400 is an organic layer, and has a wide application range.
In order to prevent the protective layer 400 formed on the chip body 100 from contacting the growth substrate 600, in an alternative embodiment, the width of the step structure 300 is greater than or equal to the height of the protective layer 400.
Example four
Referring to fig. 10, in the present embodiment, a method for transferring an LED chip is provided, which includes the following steps:
and S1, providing the growth substrate 600.
Specifically, the material of the growth substrate 600 may be sapphire (Al)2O3) Any one or more of silicon (Si), silicon carbide (SiC), gallium arsenide (GaAs), aluminum nitride (AlN), zinc oxide (ZnO), etc., may be selected according to the requirements of the device and the LED chip, and is not limited herein.
S2, an epitaxial layer 700 is prepared on the growth substrate 600, as shown in fig. 11 (a).
Specifically, the epitaxial layer 700 may be prepared by Metal Organic Chemical Vapor Deposition (MOCVD), and the material of the epitaxial layer 700 may be any one or more of GaP, GaN, ZnO, and the like.
S3, preparing an LED chip, as shown in fig. 11 (b). The LED chip includes a chip body 100 and an electrode 200 fixedly mounted on the chip body 100.
Specifically, a pattern is formed by coating, exposing, developing, etching, and removing a photoresist, so as to divide the entire epitaxial layer 700 into at least one LED epitaxial wafer, i.e., the chip body 100. The electrodes 200 are then mounted on the chip body 100.
S4, preparing a step structure 300 on the growth substrate 600 connected to the side of the chip body 100 along the circumference of the chip body 100, as shown in fig. 11 (c).
Specifically, the step structure 300 is formed by coating, photolithography, and development. The material of the step structure 300 may be any material capable of peeling the growth substrate 600 by laser lift-off, such as Polyimide (PI), poly (methyl methacrylate), PMMA, etc., which is not limited herein.
S5, preparing the protection layer 400 such that the protection layer 400 covers the exposed region of the chip main body 100, as shown in fig. 11 (d). The bare region is all regions except for the first face 120 of the chip body 100, the electrode 200 covering region, and the step structure 300 covering region.
Specifically, the material of the protection layer 400 may be an organic material, such as Polyimide (PI), polymethyl methacrylate (PMMA), etc.; or inorganic materials such as alumina (Al)2O3) Silicon nitride (SiN)x) Silicon oxide (SiO)x) And the like.
S6, peeling off and transferring the assembly consisting of the LED chip, the protective layer 400 and the step structure 300, as shown in fig. 11 (e).
Specifically, the combination of the LED chip, the protective layer 400, and the step structure 300 may be peeled off from the growth substrate 600 by laser lift-off, and then the combination of the LED chip, the protective layer 400, and the step structure 300 may be transferred to a target substrate.
S7, removing the step structure 300, as shown in fig. 11 (f).
Specifically, the step structure 300 may be removed by chemical dissolution, mechanical cutting, or the like.
According to the LED chip transfer method provided by the embodiment of the application, before the protective layer 400 is prepared, the step structure 300 is prepared on the periphery of the LED chip, so that when the protective layer 400 is prepared on the surface of the LED chip, the LED chip can be prepared only in the exposed area above the step structure 300, and the protective layer 400 is prevented from contacting with the growth substrate 600, so that the LED chip can be peeled off in a laser peeling mode without being influenced by the protective layer 400, the LED chip can be smoothly peeled off, the generation of foreign matters in the peeling operation of the LED chip is avoided, and the product yield in the LED chip transfer operation is improved. The method for transferring the LED chip provided by the embodiment of the application is not only suitable for the case that the protection layer 400 is an inorganic layer, but also suitable for the case that the protection layer 400 is an organic layer, and has a wide application range. By adopting the transfer method of the LED chip provided in this embodiment, compared with the transfer method of the LED chip shown in the first embodiment, the chip main body 100 can adopt the original shape and pattern.
In an alternative embodiment, the step structure 300 is made of Polyimide (PI) or polymethyl methacrylate (PMMA). When peeling off, the organic molecular chains in the step structure 300 are decomposed by laser irradiation, thereby peeling off the step structure 300 from the growth substrate 600. The step structure 300 removing step at this time includes the following steps:
the step structure 300 is removed by an organic solution.
Specifically, the organic solution is N-methyl-2-pyrrolidone (NMP) or the like.
EXAMPLE five
When the step structure 300 and the protection layer 400 are both organic layers, the protection layer 400 is easily lost when the step structure 300 is removed in the above manner, and in order to avoid this phenomenon, please refer to fig. 12, in this embodiment, on the basis of the fourth embodiment, the transfer method of the LED chip further includes the following steps between the step of preparing the step structure 300 and the step of preparing the protection layer 400:
s4', preparing an isolation layer 800 on the step structure 300, as shown in fig. 13 (a). The isolation layer 800 is an inorganic layer.
Specifically, the isolation layer 800 may be aluminum oxide (Al)2O3) Silicon nitride (SiN)x) Silicon oxide (SiO)x) The inorganic layer, thereby separating the protective layer 400 and the step structure 300. Since step S4' is added between step S4 and step S5 in the present embodiment, the structures of the structural bodies prepared in steps S5, S6, and S7 are also changed accordingly, as shown in fig. 13(b), 13(c), and 13 (d).
The foregoing is considered as illustrative only of the preferred embodiments of the invention, and is presented merely for purposes of illustration and description of the principles of the invention and is not intended to limit the scope of the invention in any way. Any modifications, equivalents and improvements made within the spirit and principles of the present application and other embodiments of the present application without the exercise of inventive faculty will occur to those skilled in the art and are intended to be included within the scope of the present application.

Claims (10)

1. The utility model provides a LED chip, is including the chip main part that has first face, first face does be arranged in the one side of light-emitting in the upper surface of chip main part and the lower surface, its characterized in that, the LED chip still includes the stair structure, the stair structure is followed the circumference of chip main part set up in on the side of chip main part, and be located the side is close to one side of first face.
2. The LED chip of claim 1, wherein said step structure is integrally formed with said chip body.
3. The LED chip of claim 1 or 2, wherein the height of said step structure is less than 1/2 the height of said chip body.
4. The LED chip of claim 1 or 2, wherein the height of the step structure is 10-100 nm.
5. The LED chip of claim 1 or 2, wherein the step structure has a width of 1.5-2.5 μ ι η.
6. A display panel comprising a driving substrate and the LED chip of any one of claims 1 to 5, wherein the chip body further has a second surface disposed opposite to the first surface, the LED chip further comprises an electrode fixedly mounted on the second surface, and the chip body is electrically connected to the driving substrate through the electrode;
the surface of the chip main body is provided with a protective layer, and the protective layer covering area is all areas except the first surface, the electrode covering area and the step structure covering area in the surface of the chip main body.
7. A method for transferring LED chips is characterized by comprising the following steps:
providing a growth substrate;
preparing an epitaxial layer on the growth substrate;
preparing the LED chip of any one of claims 1-5; the LED chip also comprises an electrode fixedly arranged on the chip main body;
preparing a protective layer, wherein the protective layer is used for coating an exposed area of the chip main body, which is positioned on one side of the step structure away from the first surface, and the exposed area is an area except the electrode covering area;
and peeling and transferring the assembly consisting of the LED chip and the protective layer.
8. The method for transferring an LED chip according to claim 7, wherein the width of the step structure is greater than or equal to the thickness of the protective layer.
9. A method for transferring LED chips is characterized by comprising the following steps:
providing a growth substrate;
preparing an epitaxial layer on the growth substrate;
preparing an LED chip, wherein the LED chip comprises a chip main body and an electrode fixedly arranged on the chip main body;
preparing a step structure connected to a side surface of the chip body along a circumferential direction of the chip body on the growth substrate;
preparing a protective layer, and enabling the protective layer to cover the exposed area of the chip main body; the exposed area is all areas except the first surface of the chip main body, the electrode covering area and the step structure covering area;
peeling and transferring an assembly composed of the LED chip, the protective layer and the step structure;
and removing the step structure.
10. The method for transferring an LED chip according to claim 9, wherein when the step structure and the protective layer are both organic layers, the method for transferring an LED chip further comprises the following steps between the step of preparing a step structure and the step of preparing a protective layer:
preparing an isolation layer on the step structure; the isolation layer is an inorganic layer.
CN202111009056.XA 2021-08-31 2021-08-31 LED chip, display panel and transfer method of LED chip Pending CN113764557A (en)

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JPH0738149A (en) * 1993-07-20 1995-02-07 Sharp Corp Semiconductor light emitting element and manufacture thereof
CN105428471A (en) * 2015-11-12 2016-03-23 晶能光电（江西）有限公司 Thin film flip LED chip and preparation method thereof and white light LED chip
CN109585488A (en) * 2019-01-02 2019-04-05 京东方科技集团股份有限公司 LED display base plate and preparation method thereof, display device
CN111788691A (en) * 2018-02-07 2020-10-16 艾利迪公司 Radiation emitter, emitting device, manufacturing method thereof and related display screen
CN112968106A (en) * 2020-08-12 2021-06-15 重庆康佳光电技术研究院有限公司 Chip transfer method and display device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0738149A (en) * 1993-07-20 1995-02-07 Sharp Corp Semiconductor light emitting element and manufacture thereof
CN105428471A (en) * 2015-11-12 2016-03-23 晶能光电（江西）有限公司 Thin film flip LED chip and preparation method thereof and white light LED chip
CN111788691A (en) * 2018-02-07 2020-10-16 艾利迪公司 Radiation emitter, emitting device, manufacturing method thereof and related display screen
CN109585488A (en) * 2019-01-02 2019-04-05 京东方科技集团股份有限公司 LED display base plate and preparation method thereof, display device
CN112968106A (en) * 2020-08-12 2021-06-15 重庆康佳光电技术研究院有限公司 Chip transfer method and display device

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