CN111864016B - Manufacturing method of micro light-emitting diode - Google Patents
Manufacturing method of micro light-emitting diode Download PDFInfo
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- CN111864016B CN111864016B CN202010614937.3A CN202010614937A CN111864016B CN 111864016 B CN111864016 B CN 111864016B CN 202010614937 A CN202010614937 A CN 202010614937A CN 111864016 B CN111864016 B CN 111864016B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000010410 layer Substances 0.000 claims description 171
- 229920002120 photoresistant polymer Polymers 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 31
- 238000005530 etching Methods 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 19
- 238000001312 dry etching Methods 0.000 claims description 12
- 239000012790 adhesive layer Substances 0.000 claims description 9
- 239000003292 glue Substances 0.000 claims description 9
- 238000001039 wet etching Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 3
- 230000001052 transient effect Effects 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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Abstract
The invention provides a manufacturing method of a Micro light-emitting diode, which relates to the field of Micro light-emitting diodes.
Description
Technical Field
The invention belongs to the field of miniature light-emitting diodes, and particularly relates to a manufacturing method of a miniature light-emitting diode.
Background
The Micro light emitting diode (Micro LED) has rapid development in recent years, and the advantages of self luminescence, high brightness, long service life, capability of realizing transparent and flexible display, free splicing size and shape and the like determine that the Micro LED has huge development space and application potential in the future display industry.
The existing Micro LED manufacturing mainly has two directions: firstly, an epitaxial layer is directly bonded on a back plate and then LED etching is carried out, the technical difficulty of huge transfer of Micro LEDs can be avoided by the method, but the display module obtained by the method can only be a monochrome module, the usage rate of the epitaxial wafer is extremely low, and the manufacturing cost is high; the other method is to etch the epitaxial layer by the Micro LED on the epitaxial wafer or after the epitaxial layer is transferred to the transient substrate, the method can improve the utilization rate of epitaxial materials and realize full-color display by a transfer technology, but in the process of manufacturing the Micro LED by the method, photoresist is required to be removed after etching is finished, and because the area of the bottom of the LED is small, the photoresist removing process is likely to cause the position of the small-size LED to shift, and further subsequent processes such as mass transfer and the like are influenced.
Disclosure of Invention
The invention provides a method for manufacturing a micro light-emitting diode, which is a method for forming the micro light-emitting diode by partially etching an epitaxial layer, removing light resistance on the epitaxial layer and continuously etching the epitaxial layer, so that the position accuracy of the manufactured micro light-emitting diode is improved.
The technical scheme of the invention is as follows:
the invention discloses a manufacturing method of a miniature light-emitting diode, which comprises the following steps:
s1: providing an epitaxial wafer comprising a growth substrate, a buffer layer and an epitaxial layer;
s2: firstly, sequentially depositing a metal layer and a bonding layer on an epitaxial layer of an epitaxial wafer, and then attaching a transient substrate to the bonding layer, wherein the epitaxial wafer sequentially comprises a growth substrate, a buffer layer and the epitaxial layer from bottom to top;
s3: stripping the growth substrate, and separating the growth substrate from the buffer layer;
s4: coating a layer of light resistance on the buffer layer, exposing and developing to form a light resistance coverage area and a non-light resistance coverage area which are arranged at intervals, and dry-etching the buffer layer and the epitaxial layer without the light resistance coverage area until the epitaxial layer has the residual thickness d;
s5: removing the photoresist with the photoresist covering area, etching the buffer layer with the photoresist covering area, the epitaxial layer without the photoresist covering area and the metal layer to form a plurality of micro light-emitting diodes arranged in an array manner and a first metal positioned at the bottoms of the micro light-emitting diodes;
s6: and (4) debonding the bonding layer to allow the micro light-emitting diode to be transferred.
Preferably, the remaining thickness d of the epitaxial layer is less than or equal to the thickness of the buffer layer.
Preferably, when the remaining thickness d of the epitaxial layer is less than the thickness of the buffer layer, the etching of the buffer layer, the epitaxial layer and the metal layer in step S5 is performed by dry etching.
Preferably, when the remaining thickness d of the epitaxial layer is equal to the thickness of the buffer layer, the etching of the buffer layer and the epitaxial layer in step S5 is performed by dry etching, and the etching of the metal layer is performed by wet etching.
Preferably, the metal layer includes an ohmic contact layer, an electrode layer, and a bonding layer.
Preferably, the epitaxial layer sequentially comprises an N-type doped layer, a light emitting layer and a P-type doped layer from bottom to top.
Preferably, the adhesive layer is made of a UV glue or a heat-sensitive glue or a cold-melt glue.
Preferably, step S2 peels the growth substrate by a laser lift-off process or a chemical lift-off technique.
Preferably, the etch rate of the buffer layer is equal to the etch rate of the epitaxial layer.
The invention can bring at least one of the following beneficial effects:
the Micro LED has small size (generally less than 100 mu m) and large transfer quantity, and partial LED deviation possibly exists in the manufacturing process of the Micro LED, so that the huge transfer difficulty is increased.
Drawings
The present invention will be further described in the following detailed description of preferred embodiments, which is to be read in connection with the accompanying drawings.
FIG. 1 is a schematic diagram of steps S1 and S2 of a method for manufacturing a micro light-emitting diode according to the present invention;
FIG. 2 is a schematic diagram of step S3 of the method for manufacturing a micro light-emitting diode according to the present invention;
FIG. 3 is a schematic diagram of step S4 of the method for manufacturing a micro light-emitting diode according to the present invention;
fig. 4 is a schematic diagram of step S5 of the method for manufacturing a micro light emitting diode according to the present invention.
Detailed Description
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following description will be made with reference to the accompanying drawings. It is obvious that the drawings in the following description are only some examples of the invention, and that for a person skilled in the art, other drawings and embodiments can be derived from them without inventive effort.
For the sake of simplicity, the drawings only schematically show the parts relevant to the present invention, and they do not represent the actual structure as a product. In addition, in order to make the drawings concise and understandable, components having the same structure or function in some of the drawings are only schematically illustrated or only labeled. In this document, "one" means not only "only one" but also a case of "more than one".
The technical solution of the present invention is described in detail with specific examples below.
The invention provides a manufacturing method of a micro light-emitting diode, which comprises the following steps:
s1: as shown in fig. 1, an epitaxial wafer 10 is provided that includes a growth substrate 11, a buffer layer, and an epitaxial layer 12. In fig. 1, the buffer layer is in the same layer as the epitaxial layer 12.
S2: as shown in fig. 1, first, a metal layer 02 and an adhesive layer 03 are deposited in this order on the epitaxial layer 12, and then a temporary substrate 04 is attached to the adhesive layer 03.
The epitaxial layer 12 sequentially includes an N-type doped layer, a light emitting layer, and a P-type doped layer from bottom to top, and in step S2, a metal layer 02 is deposited on the P-type doped layer, and then an adhesive layer 03 is deposited. The metal layer 02 includes an ohmic contact layer, an electrode layer, and a bonding layer (the ohmic contact layer, the electrode layer, and the bonding layer are not shown), and the metal layer 02 is used for being transferred to the display backplane along with the micro light emitting diode 20 after being etched and formed. The adhesive layer 03 may be made of UV glue or other debondable materials, such as heat sensitive glue or cold release glue, and the adhesive layer 03 is used to bond the temporary substrate 04 and the epitaxial wafer 10.
S3: as shown in fig. 2, the growth substrate 11 is peeled off, and the growth substrate 11 and the buffer layer are separated.
In this step, the growth substrate 11 and the buffer layer may be separated using a laser lift-off process or a chemical lift-off technique, followed by a subsequent barrier etch of the epitaxial layer 12.
S4: as shown in fig. 3, a layer of photoresist 30 is coated on the buffer layer, and after exposure and development, a photoresist covered area 31 and a non-photoresist covered area 32 are formed at intervals, and dry etching is performed on the buffer layer without the photoresist covered area 32 and the epitaxial layer 12 until the epitaxial layer 12 has a residual thickness d.
The coated photoresist 30 is exposed and developed according to the size and shape of the micro light emitting diode 20, the patterned photoresist 30 includes a photoresist covered area 31 and a non-photoresist covered area 32 which are arranged at intervals, and the buffer layer and the epitaxial layer 12 in the area are not etched because the photoresist 30 covers the photoresist covered area 31.
When the non-photoresist covering region 32 is etched, the buffer layer is etched first, then the epitaxial layer 12 is continuously etched, and when the epitaxial layer 12 is etched to the remaining thickness d, the etching is stopped. Because the epitaxial layer 12 of the photoresist-free covered region 32 is not completely etched away, the bottom of the epitaxial layer 12 has a large contact area, and the photoresist 30 is removed without causing a shift of the epitaxial layer 12 due to the small contact area at the bottom of the epitaxial layer 12, as compared to the prior art.
S5: as shown in fig. 4, the photoresist 30 with the photoresist covering region 31 is removed, and the buffer layer with the photoresist covering region 31, the epitaxial layer 12 without the photoresist covering region 32 and the metal layer 02 are etched away to form a plurality of micro light emitting diodes 20 arranged in an array and a first metal 021 at the bottom of the micro light emitting diodes 20.
After the photoresist 30 is removed, in order to form the transferable micro light emitting diode 20, the buffer layer, the epitaxial layer 12 and the metal layer 02 are further etched, wherein the buffer layer comprises the photoresist covering region 31, and the epitaxial layer 12 comprises the photoresist covering region 32 and the metal layer 02.
In the invention, the epitaxial layer 12 is made of GaN material, and the buffer layer is also made of GaN material, so that the etching rate of the buffer layer is equal to that of the epitaxial layer 12, and in order to ensure that the buffer layer with the light resistance coverage area 31 finishes etching the epitaxial layer 12 without the light resistance coverage area 32 and the metal layer 02 before the buffer layer with the light resistance coverage area 31 finishes etching, the residual thickness d of the epitaxial layer 12 and the etching method of the metal layer 02 can be adjusted.
When the remaining thickness d of the epitaxial layer 12 is smaller than the thickness of the buffer layer, the etching of the buffer layer, the epitaxial layer 12 and the metal layer 02 in step S4 may be performed by dry etching. Because the remaining thickness d of the epitaxial layer 12 is less than the thickness of the buffer layer, the buffer layer of the photoresist covered region 31 is not etched after the dry etching of the epitaxial layer 12 of the photoresist-free covered region 32 is finished, and it should be noted that the dry etching technique also has an etching effect on the metal layer 02, so that the dry etching of the metal layer 02 of the photoresist-free covered region 32 can be continued until the metal layer 02 of the photoresist-free covered region 32 and the buffer layer of the photoresist-free covered region 31 are etched. When the remaining thickness d of the epitaxial layer 12 is equal to the thickness of the buffer layer, the etching of the buffer layer and the epitaxial layer 12 in step S4 is performed by dry etching, and the etching of the metal layer 02 is performed by wet etching. Because the remaining thickness d of the epitaxial layer 12 is equal to the thickness of the buffer layer, the buffer layer with the photoresist covering region 31 is etched at the same time after the epitaxial layer 12 with the photoresist-free covering region 32 is dry etched, and in order to etch the metal layer 02 with the photoresist-free covering region 32, wet etching can be adopted for the metal layer 02, and the wet etching does not etch the epitaxial layer 12.
S6: the adhesive layer 03 is debonded and the micro leds 20 are ready for transfer.
After the adhesive layer 03 is debonded, the micro light emitting diodes 20 and the first metal 021 at the bottom of the micro light emitting diodes 20 are in a movable state, and after the mass transfer, the micro light emitting diodes 20 can be directly bonded to the display backplane through the first metal 021 at the bottom.
According to the method, the epitaxial layer is partially etched, then the photoresist on the epitaxial layer is removed, and then the epitaxial layer is continuously etched to form the Micro light-emitting diode, so that the problem that the Micro light-emitting diode is easy to shift in position in the manufacturing process is solved, and the position accuracy of the Micro LED after being manufactured is improved.
It should be noted that the above mentioned embodiments are only preferred embodiments of the present invention, but the present invention is not limited to the details of the above embodiments, and it should be noted that, for those skilled in the art, it is possible to make various modifications and amendments within the technical concept of the present invention without departing from the principle of the present invention, and various modifications, amendments and equivalents of the technical solution of the present invention should be regarded as the protection scope of the present invention.
Claims (9)
1. A manufacturing method of a micro light-emitting diode is characterized by comprising the following steps:
s1: providing an epitaxial wafer comprising a growth substrate, a buffer layer and an epitaxial layer;
s2: firstly, sequentially depositing a metal layer and a bonding layer on an epitaxial layer of an epitaxial wafer, and then attaching a transient substrate to the bonding layer, wherein the epitaxial wafer sequentially comprises a growth substrate, a buffer layer and the epitaxial layer from bottom to top;
s3: stripping the growth substrate, and separating the growth substrate from the buffer layer;
s4: coating a layer of light resistance on the buffer layer, exposing and developing to form a light resistance coverage area and a non-light resistance coverage area which are arranged at intervals, and dry-etching the buffer layer and the epitaxial layer without the light resistance coverage area until the epitaxial layer has the residual thickness d;
s5: removing the photoresist with the photoresist covering area, etching the buffer layer with the photoresist covering area, the epitaxial layer without the photoresist covering area and the metal layer to form a plurality of micro light-emitting diodes arranged in an array manner and a first metal positioned at the bottoms of the micro light-emitting diodes;
s6: and (4) debonding the bonding layer to allow the micro light-emitting diode to be transferred.
2. The method of claim 1, wherein the remaining thickness d of the epitaxial layer is less than or equal to the thickness of the buffer layer.
3. The method of claim 2, wherein the etching of the buffer layer, the epitaxial layer and the metal layer in step S5 is performed by dry etching when the remaining thickness d of the epitaxial layer is less than the thickness of the buffer layer.
4. The method of claim 2, wherein the etching of the buffer layer and the epitaxial layer in step S5 is performed by dry etching and the etching of the metal layer is performed by wet etching when the remaining thickness d of the epitaxial layer is equal to the thickness of the buffer layer.
5. The method of claim 1, wherein the metal layer comprises an ohmic contact layer, an electrode layer, and a bonding layer.
6. The method as claimed in claim 1, wherein the epitaxial layer comprises an N-type doped layer, a light emitting layer and a P-type doped layer from bottom to top.
7. The method of claim 1, wherein the adhesive layer is made of a UV glue, a thermal glue or a cold-melt glue.
8. The method of claim 1, wherein the step S2 is performed by stripping the growth substrate by a laser stripping process or a chemical stripping technique.
9. The method of claim 1, wherein the buffer layer has an etch rate equal to an etch rate of the epitaxial layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010614937.3A CN111864016B (en) | 2020-06-30 | 2020-06-30 | Manufacturing method of micro light-emitting diode |
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| CN202010614937.3A CN111864016B (en) | 2020-06-30 | 2020-06-30 | Manufacturing method of micro light-emitting diode |
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| CN111864016B true CN111864016B (en) | 2021-07-13 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103296155A (en) * | 2013-06-06 | 2013-09-11 | 刘凤全 | Thin-film LED epitaxial chip manufacturing method |
| CN104319323A (en) * | 2014-10-29 | 2015-01-28 | 华灿光电股份有限公司 | Light-emitting diode chip preparation method |
| CN109802019A (en) * | 2019-04-17 | 2019-05-24 | 南京中电熊猫平板显示科技有限公司 | A kind of transfer method of miniature LED |
| CN109841710A (en) * | 2019-04-12 | 2019-06-04 | 南京大学 | GaN Micro-LED array device and preparation method thereof for transparence display |
| CN111326613A (en) * | 2018-12-13 | 2020-06-23 | 原子能和替代能源委员会 | Method for producing a component having a light-emitting and/or light-receiving diode |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4200892B2 (en) * | 2003-12-18 | 2008-12-24 | ソニー株式会社 | Manufacturing method of semiconductor light emitting device |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103296155A (en) * | 2013-06-06 | 2013-09-11 | 刘凤全 | Thin-film LED epitaxial chip manufacturing method |
| CN104319323A (en) * | 2014-10-29 | 2015-01-28 | 华灿光电股份有限公司 | Light-emitting diode chip preparation method |
| CN111326613A (en) * | 2018-12-13 | 2020-06-23 | 原子能和替代能源委员会 | Method for producing a component having a light-emitting and/or light-receiving diode |
| CN109841710A (en) * | 2019-04-12 | 2019-06-04 | 南京大学 | GaN Micro-LED array device and preparation method thereof for transparence display |
| CN109802019A (en) * | 2019-04-17 | 2019-05-24 | 南京中电熊猫平板显示科技有限公司 | A kind of transfer method of miniature LED |
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