CN114256400B - Micro light-emitting chip assembly, manufacturing method thereof and micro light-emitting chip transferring method - Google Patents
Micro light-emitting chip assembly, manufacturing method thereof and micro light-emitting chip transferring method Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 79
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 239000010410 layer Substances 0.000 claims abstract description 242
- 239000012790 adhesive layer Substances 0.000 claims abstract description 106
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 47
- 238000010521 absorption reaction Methods 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims description 206
- 239000010408 film Substances 0.000 claims description 114
- 239000010409 thin film Substances 0.000 claims description 85
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical group [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 238000003825 pressing Methods 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims description 2
- 239000011368 organic material Substances 0.000 claims description 2
- 230000003313 weakening effect Effects 0.000 abstract description 7
- 239000000463 material Substances 0.000 description 15
- 239000003292 glue Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 230000008961 swelling Effects 0.000 description 7
- 238000000926 separation method Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
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Abstract
The invention relates to a micro light emitting chip assembly, a manufacturing method thereof and a micro light emitting chip transferring method. The water-swelling film layer and the supporting body for improving the epitaxial height of each electrode are sequentially formed on the electrodes of each micro light-emitting chip, so that the electrodes of each micro light-emitting chip can be reliably connected with the adhesive layer by the film layer and the supporting body in the chip transferring process, and the reliability and the success rate of chip transferring are improved; the contact area between each film layer after water absorption and expansion and the electrode becomes smaller to form a weakening structure, so that the electrode of the picked micro light-emitting chip can be directly separated from the film layer, the step of debonding the adhesive layer in a light or heat mode can be omitted, the micro light-emitting chip transferring process is simplified, the convenience and the transferring efficiency of micro light-emitting chip transferring are improved, the manufacturing period of the display backboard can be shortened, and the manufacturing cost is reduced.
Description
Technical Field
The present invention relates to the field of semiconductor devices, and in particular, to a micro light emitting chip assembly, a manufacturing method thereof, and a micro light emitting chip transfer method.
Background
Currently, one key technology faced by micro-LEDs (micro-Light Emitting Diode, micro light emitting diodes) is to transfer micro-LED chips to a display back plate by mass transfer. In the related art, a debondable adhesive layer is generally disposed on a first temporary substrate, and micro-LED chips are transferred from a growth substrate to the first temporary substrate through the debondable adhesive layer by adhesion, and then transferred from the first temporary substrate to a display back plate by using a second temporary substrate. In this process, the glue layer provided on the first temporary substrate often has uneven thickness, resulting in that when the growth substrate is attached to the first temporary substrate, the attaching degrees of the electrodes of the micro-LED chips at different positions on the growth substrate and the first temporary substrate are different, for example, there may be cases that the glue material is thinner at certain positions, and meanwhile, the height of the electrodes of the micro-LED chips is limited, so that the micro-LED chips fail to form reliable adhesion and transfer failure with the glue layer, and the transfer success rate of the chips is low.
In addition, as the adhesive layer on the first temporary substrate has strong adhesion to the micro-LED chip, the micro-LED chip can be transferred to the second temporary substrate only by debonding the adhesive layer on the first temporary substrate in a light or heat mode, and the LED chip transfer method has complex process and low transfer efficiency.
Therefore, how to improve the success rate of transferring the LED chip and how to realize more convenient and efficient transferring of the LED chip are the problems to be solved.
Disclosure of Invention
In view of the shortcomings of the related art, the present application aims to provide a micro light emitting chip assembly, a manufacturing method thereof and a micro light emitting chip transferring method, which aims to solve the problems of low transferring success rate, complex transferring process and low efficiency of the transfer of an LED chip in the related art.
A miniature light emitting chip assembly comprising:
a first substrate;
a plurality of micro light emitting chips formed on a front surface of the first substrate, electrodes of the plurality of micro light emitting chips being away from the front surface of the first substrate;
mutually independent thin film layers formed on the electrodes of the micro light emitting chips, wherein the thin film layers have water absorption expansion characteristics;
and a support body formed on each of the film layers and independent of each other.
According to the miniature luminous chip assembly, in the chip transferring process, after one surfaces of the first substrate and the second substrate, on which the adhesive layers are formed, are pressed, the supporting bodies are embedded into the adhesive layers, so that the electrodes of the miniature luminous chips can be reliably connected with the adhesive layers by the aid of the film layers and the supporting bodies, the situation that the transfer failure is caused because the electrodes of the miniature luminous chips cannot be reliably connected with the adhesive layers is avoided, and the reliability and the success rate of the chip transferring are improved; in addition, the first substrate and the micro light-emitting chip can be placed in a water absorption environment after being separated, each film layer absorbs water and expands, the contact area between the film layer and the electrode is reduced in the expansion process, so that the bonding force between the film layer and the electrode is reduced to form a weakening structure, when the micro light-emitting chip is picked up from the second substrate, the electrode of the micro light-emitting chip picked up on the second substrate can be directly separated from the film layer, the step of debonding treatment of the adhesive layer on the second substrate in a light or heat mode can be omitted, the micro light-emitting chip transferring process can be simplified, and the convenience and the transferring efficiency of micro light-emitting chip transferring are improved.
The manufacturing method of the miniature light-emitting chip assembly comprises the following steps:
forming mutually independent film layers on the electrodes of each micro light-emitting chip on the first substrate respectively, wherein the film layers have water absorption expansion characteristics;
forming a mutually independent support on the film layers of each electrode.
The manufacturing method of the miniature light-emitting chip component is simple in process, easy to realize, low in cost and high in manufacturing efficiency. When the prepared miniature luminous chip assembly is applied to chip transfer, the reliability and success rate of the chip transfer can be improved; the micro light emitting chip transferring process is simplified, the convenience and the transferring efficiency of micro light emitting chip transferring are improved, meanwhile, the manufacturing period of the display backboard can be shortened, and the manufacturing cost is reduced.
A micro light emitting chip transfer method comprising:
providing the miniature light-emitting chip assembly, and pressing the first substrate and one surface of the second substrate, on which the adhesive layer is formed, so that each support body is embedded into the adhesive layer, and the support bodies support the miniature light-emitting chip on the second substrate;
separating the micro light emitting chip from the first substrate;
Placing the second substrate in a water absorption environment to enable the film layer to absorb water and expand, and reducing the binding force between the film layer and the electrode in the expansion process;
applying a pulling force to the micro light emitting chip far away from the film layer so as to separate the micro light emitting chip from the film layer to finish picking up the micro light emitting chip;
and transferring the picked micro light emitting chip to a target area.
According to the micro light-emitting chip transferring method, the water-swelling film layer and the supporting body with the hardness and the supporting strength meeting the requirements are sequentially formed on the electrodes of each micro light-emitting chip of the first substrate, the formed film layer and the supporting body serve as the epitaxial height of each electrode, and in the chip transferring process, one surface of the first substrate and one surface of the second substrate, on which the adhesive layer is formed, are pressed to enable each supporting body to be embedded into the adhesive layer, so that the electrodes of each micro light-emitting chip can be reliably connected with the adhesive layer through the film layer and the supporting body, the situation that the electrodes of the micro light-emitting chips cannot be reliably connected with the adhesive layer to cause transfer failure is avoided, and the reliability and success rate of chip transferring are improved; in addition, the first substrate and the micro light-emitting chip are separated and then placed in a water absorption environment, the thin film layers absorb water and expand, the contact area between the thin film layers and the electrodes is reduced in the expansion process, so that the bonding force between the thin film layers and the electrodes is reduced to form a weakening structure, and when the micro light-emitting chip is picked up from the second substrate, the electrodes of the micro light-emitting chip picked up on the second substrate can be directly separated from the thin film layers, so that the step of debonding treatment of an adhesive layer on the second substrate in a light or heat mode can be omitted, the micro light-emitting chip transferring process is simplified, and the convenience and the transferring efficiency of micro light-emitting chip transferring are improved.
Based on the same inventive concept, the application also provides a display backboard, wherein a plurality of die bonding areas are arranged on the display backboard; the display backboard further comprises a plurality of micro light emitting chips, and the micro light emitting chips are transferred to the die bonding area to finish bonding through the micro light emitting chip transfer method.
The manufacturing of the display backboard is more convenient and efficient due to the adoption of the miniature light-emitting chip transferring method with higher transferring success probability and more convenient and efficient transferring process, so that the manufacturing of the display backboard is more convenient and efficient, the system period of the display version is shortened to a certain extent, and the manufacturing cost of the display backboard is reduced.
Drawings
FIG. 1 is a schematic view of a support formed according to an embodiment of the present invention;
FIG. 2 is a schematic diagram II of a support formed according to an embodiment of the present invention;
FIG. 3 is a schematic view of a support formed according to an embodiment of the present invention;
FIG. 4 is a schematic flow chart of a method for manufacturing a micro light emitting chip assembly according to an embodiment of the present invention;
FIG. 5-1 is a schematic diagram of forming a thin film layer according to an embodiment of the present invention;
FIG. 5-2 is a schematic diagram II of forming a thin film layer according to an embodiment of the present invention;
FIG. 6 is a schematic flow chart of forming a supporting body according to an embodiment of the present invention;
FIG. 7 is a schematic flow chart of a micro light emitting chip transfer method according to an embodiment of the present invention;
FIG. 8-1 is a schematic diagram illustrating a first substrate and a second substrate pressed together according to an embodiment of the present invention;
fig. 8-2 is a second schematic diagram of lamination of a first substrate and a second substrate according to an embodiment of the present invention;
FIG. 9-1 is a schematic illustration of expansion of a film layer according to an embodiment of the present invention;
FIG. 9-2 is a schematic diagram showing expansion of a film layer according to an embodiment of the present invention;
FIG. 10-1 is a schematic flow chart of a micro light emitting chip transfer method according to an application example of another alternative embodiment of the present invention;
FIG. 10-2 is a schematic diagram illustrating a transferring process of a micro light emitting chip according to an application example of another alternative embodiment of the present invention;
FIG. 11-1 is a schematic flow chart of a micro light emitting chip transfer method according to an application example II of another alternative embodiment of the present invention;
FIG. 11-2 is a schematic diagram illustrating a transferring process of a micro light emitting chip according to a second embodiment of the present invention;
reference numerals illustrate:
1-first long substrate, 21-epitaxial layer, 22-electrode, 3-thin film layer, 4-support, 5-second substrate, 6-adhesive layer, 7-pick-up substrate, 8-pick-up bump, 9-back plate substrate, 10-back plate film layer.
Detailed Description
In order to facilitate an understanding of the present application, a more complete description of the present application will now be provided with reference to the relevant figures. Preferred embodiments of the present application are shown in the accompanying drawings. This application may, however, be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
In the related art, when transferring micro-LED chips from a growth substrate to a first temporary substrate, the glue layer provided on the first temporary substrate often has uneven thickness, which results in that when the growth substrate is attached to the first temporary substrate, the attaching degrees of the electrodes of the micro-LED chips at different positions on the growth substrate are different from those on the first temporary substrate, for example, the glue layers may be thinner at certain positions, and meanwhile, the height of the electrodes of the micro-LED chips is limited, which results in failure in reliable adhesion and transfer between the micro-LED chips and the glue layer, and thus, the transfer success rate of the chips is low.
In addition, as the adhesive layer on the first temporary substrate has strong adhesion to the micro-LED chip, the micro-LED chip can be transferred to the second substrate only by debonding the adhesive layer on the first temporary substrate in a light or heat mode, and the LED chip transfer method has complex process and low transfer efficiency.
Based on this, the present application intends to provide a solution to the above technical problem, the details of which will be explained in the following embodiments.
The present embodiment provides a micro light emitting chip assembly, including: a first substrate, a plurality of micro light emitting chips formed on a front surface of the first substrate, electrodes of the plurality of micro light emitting chips being away from the front surface of the first substrate; and mutually independent film layers formed on the electrodes of the miniature light emitting chips, wherein the film layers have water absorption expansion characteristics, and mutually independent supports are formed on the film layers. The water-swelling film layer and the supporting body with the hardness and the supporting strength meeting the requirements are sequentially formed on the electrodes of each micro light-emitting chip of the first substrate, the formed film layer and the supporting body are used as the epitaxial height of each electrode, one surface of the first substrate and one surface of the second substrate, which are provided with the adhesive layer, can be pressed to enable each supporting body to be embedded into the adhesive layer in the chip transferring process, so that the electrodes of each micro light-emitting chip can be reliably connected with the adhesive layer by virtue of the film layer and the supporting body, the situation that the electrodes of the micro light-emitting chip cannot be reliably connected with the adhesive layer to cause transfer failure is avoided, and the reliability and success rate of chip transferring are improved; in addition, the first substrate and the micro light-emitting chip are separated and then placed in a water absorption environment, each film layer absorbs water and expands, the contact area between the film layer and the electrode is reduced in the expansion process, so that the bonding force between the film layer and the electrode is reduced to form a weakening structure, when the micro light-emitting chip is picked up from the second substrate, the electrode of the micro light-emitting chip picked up on the second substrate can be directly separated from the film layer, the step of debonding the adhesive layer on the second substrate in a light or heat mode can be omitted, the micro light-emitting chip transfer process is simplified, and the convenience and transfer efficiency of micro light-emitting chip transfer can be improved.
It should be understood that the first substrate in this embodiment may be, but not limited to, a growth substrate, and the material of the growth substrate is various semiconductor materials that can grow the micro light emitting chip on the growth substrate, for example, the material of the growth substrate may be, but not limited to, sapphire, silicon carbide, silicon, gallium arsenide, or other semiconductor materials, which is not limited herein. And it should be understood that the first substrate is not limited to a growth substrate, but may be various substrates for carrying the micro light emitting chips.
The micro light emitting chip formed on the growth substrate in this embodiment includes an epitaxial layer and an electrode, and the embodiment is not limited to a specific structure of the epitaxial layer of the micro light emitting chip, and in one example, the epitaxial layer of the micro light emitting chip may include an N-type semiconductor, a P-type semiconductor, and an active layer located between the N-type semiconductor and the P-type semiconductor, and the active layer may include a quantum well layer, and may further include other structures. In other examples, the epitaxial layer may optionally further include at least one of a reflective layer, a passivation layer. The material and shape of the electrode in this embodiment are not limited, and for example, the material of the electrode may include at least one of Cr, ni, al, ti, au, pt, W, pb, rh, sn, cu, and Ag.
It should be understood that the micro light emitting chip in the present embodiment may include, but is not limited to, at least one of a micro-LED chip and a mini-LED chip, and in one example, the micro light emitting chip may be a micro-LED chip; in yet another example, the micro light emitting chip may be a mini-LED chip.
It should be understood that the micro light emitting chip in this embodiment may include, but is not limited to, at least one of a flip-chip LED chip, a front-mounted LED chip, for example, in one example, the micro light emitting chip may be a flip-chip LED chip; in yet another example, the micro light emitting chip may be a front-mounted LED chip.
In this embodiment, the shape of each micro light emitting chip on the first substrate is that the electrode of each micro light emitting chip is exposed upwards (i.e. the electrode of each micro light emitting chip is far away from the front surface of the first substrate), and the thin film layer formed on the electrode of each micro light emitting chip has the characteristic of water absorption expansion, i.e. the thin film layer expands after absorbing water, so that the contact surface of the surface contacted with the thin film layer becomes smaller. It should be understood that the thin film layer in this embodiment may be made of various materials that have water swelling and are not harmful to the electrodes of the micro light emitting chip or to the electrodes and epitaxial layers of the micro light emitting chip. For example, in some applications, the thin film layer may be, but is not limited to, a lithium fluoride LiF layer, or a porous organic material layer.
It should be understood that the strength and hardness of the support body formed in this embodiment only need to meet the above requirements, and the specific material used can be flexibly selected, for example, in some application examples, silicon oxide or silicon nitride may be used to form the support body.
In some examples of this embodiment, in order to ensure that each micro light emitting chip can form reliable adhesion with the adhesive layer on the second substrate through the thin film layer and the support (the thin film layer can be regarded as an epitaxial structure of the electrode, so that the epitaxial height of the electrode can be raised), the heights of the formed thin film layer and epitaxial layer can be set according to any one of the following principles:
the height of the support body is larger than or equal to the thickness of the adhesive layer on the second substrate, and when the miniature light-emitting chip is reliably adhered to the adhesive layer on the second substrate through the film layer and the support body, only the adhesive layer on the second substrate is embedded into the support body, and the film layer and the electrode are positioned outside the adhesive layer.
The sum of the heights of the film layer and the support body is larger than the thickness of the adhesive layer. At this time, when the micro light emitting chip forms reliable adhesion with the adhesive layer on the second substrate through the film layer and the support body, at least part of the support body and the film layer are embedded into the adhesive layer on the second substrate, and the electrodes are positioned outside the adhesive layer.
An example of the arrangement of the support is shown in fig. 1, in which the support 4 arranged on the film layer 3 has a height equal to or greater than the thickness of the adhesive layer on the second substrate.
Another example of the arrangement of the support is shown in fig. 2, in which the support 4 is arranged on the film layer 3, and the sum of the heights of the film layer 3 and the support 4 is equal to or greater than the thickness of the adhesive layer on the second substrate.
Alternatively, in some examples of the present embodiment, in order to facilitate separation between the subsequent thin film layer and the electrode, an area where the thin film layer is bonded to the electrode may be set smaller than an area where the thin film layer is bonded to the support, so that a bonding force between the electrode and the thin film layer may be ensured, smaller than a bonding force between the thin film layer and the support, thereby facilitating analysis of the electrode and the thin film layer, and allowing the thin film layer to remain on the support. For example, an example of the arrangement of the support is shown in fig. 3, in which the area of the bonding of the thin film layer 3 to the electrode 22 is smaller than the area of the bonding of the thin film layer 3 to the support 4. The longitudinal section of the film layer 3 in this example is a trapezoidal shape, but it should be understood that the shape is not limited to this shape, and may be any other shape that satisfies the above-described arrangement requirements.
It should be appreciated that the micro light emitting chip assembly of the present embodiment may be manufactured through various manufacturing processes. For easy understanding, the following description will take a manufacturing method of the micro light emitting chip assembly shown in fig. 4 as an example:
referring to fig. 4, the method for manufacturing the micro light emitting chip assembly includes, but is not limited to:
s401: thin film layers independent of each other are respectively formed on the electrodes of each micro light emitting chip on the first substrate.
It should be understood that the thickness of the thin film layer formed in this embodiment may be flexibly set, and the thin film layer may cover only the electrode, and may cover only the cross section of the electrode, and the coverage of the cross section of the electrode may be full coverage or half coverage, for the convenience of subsequent separation from the electrode. For example, as shown in fig. 5-1, a plurality of micro light emitting chips are provided on a first substrate 1, the micro light emitting chips include an epitaxial layer 21 and electrodes 22, a thin film layer 3 is formed on each electrode 22, and the thin film layer 3 entirely covers a cross section of the electrode 2. Another example of application is shown in fig. 5-2, which differs from that shown in fig. 5-1 mainly in that the thin film layer 3 is formed without covering the cross section of the electrode 2 entirely.
In addition, it should be understood that the process of forming the thin film layer on each electrode is not limited in this embodiment, and any process capable of achieving this object may be used, for example, but not limited to, evaporation, deposition, coating, molding, injection molding, and the like.
S402: a support is formed on the thin film layer of each electrode.
In this embodiment, the process of forming the support body on each thin film layer is not limited, and the formed support body is mainly used for being conveniently embedded into the corresponding adhesive layer in the subsequent transfer process, and forming support for the thin film layer and the electrode. Therefore, the strength and hardness of the support body formed in the present embodiment only need to meet the above requirements, and the specific material used can be flexibly selected, for example, in some application examples, silicon oxide or silicon nitride may be used to form the support body.
For ease of understanding, an example support body forming process is described below, with reference to fig. 6, which includes but is not limited to:
s601: a support layer is formed on the first substrate to cover each of the micro light emitting chips and the thin film layer.
For example, in one example, a silicon oxide layer or a silicon nitride layer covering each micro light emitting chip and the thin film layer may be formed on the first substrate by, but not limited to, chemical vapor deposition CVD.
S602: and (3) reserving the supporting layer positioned above each film layer, removing the supporting layer in other areas, and forming a supporting body by the supporting layer reserved above each film layer.
For example, in one example, the support layer located above each thin film layer may be retained by, but not limited to, photolithography, etching, etc., the support layer in other areas is removed, and the shape of the support body formed by the support layer retained above each thin film layer may be bar-shaped or stripe-shaped, etc.
The present embodiment provides a method for transferring the micro light emitting chip assembly exemplified above to a chip transfer, and please refer to fig. 7, which includes but is not limited to:
s701: and pressing the surface of the first substrate, which is provided with the micro light-emitting chip, with the surface of the second substrate, which is provided with the adhesive layer, so that each support body is embedded into the adhesive layer.
In this embodiment, the material of the second substrate is not limited, and for example, in one example, the material of the second substrate may be any one of glass, sapphire, quartz and silicon.
In this embodiment, the configuration, thickness and material of the adhesive layer disposed on the second substrate may be flexibly set, so long as it can reliably adhere the corresponding support body or the support body and the thin film layer when the first substrate is bonded to the surface on which the plurality of micro light emitting chips grow.
In this embodiment, after the surface of the first substrate having the micro light emitting chip and the surface of the second substrate having the adhesive layer are pressed together, each support is embedded into the adhesive layer to form adhesion. As shown by the above analysis, in some examples, the support may be merely embedded in the adhesive layer, and in other examples, the support and the film layer may be embedded in the adhesive layer, which is not described herein.
For example, referring to fig. 8-1, an adhesive layer 6 is disposed on the second substrate 5, and after the first substrate 1 and the second substrate 5 are pressed together, the support 4 is embedded in the adhesive layer 6, and the thin film layer 3 and the electrode 22 are located outside the adhesive layer 6.
For another example, as shown in fig. 8-2, an adhesive layer 6 is disposed on the second substrate 5, and after the first substrate 1 and the second substrate 5 are pressed together, a portion of the support 4 and the film layer 3 are embedded in the adhesive layer 6, and the electrode 22 is located outside the adhesive layer 6.
S702: the micro light emitting chip is separated from the first substrate.
And after the surface of the first substrate, on which the micro light emitting chip grows, is attached to the surface of the second substrate, on which the adhesive layer is arranged, each support body is adhered to the adhesive layer on the second substrate.
In this step, when the micro light emitting chip is separated from the first substrate, alternatively, but not limited to LLO (Laser Lift Off) may be used to ensure that the micro light emitting chip is smoothly peeled from the first substrate.
S703: and placing the second substrate in a water absorption environment to enable the film layer to absorb water and expand, and reducing the binding force between the film layer and the electrode in the expansion process.
It should be understood that the water absorption environment in this embodiment may be flexibly set, so long as the requirement that the film layer absorbs water and expands is satisfied, and then the contact area between the film layer and the electrode in the expansion process becomes gradually smaller, so that the binding force between the film layer and the electrode becomes smaller to form a weakening structure for weakening the binding force between the film layer and the electrode.
For example, in some examples, the water absorbing environment may be set to have an air humidity of 50% to 100% and an ambient temperature of normal temperature.
Alternatively, in some examples of the present embodiment, in order to enhance the efficiency of the water swelling of the film layer, the ambient temperature and the air pressure may be appropriately raised, thereby enhancing the transfer efficiency. For example, in one example, the water absorbing environment may include, but is not limited to:
the air humidity is 50% to 100%; for example, the air humidity may be, but is not limited to, 50%, 60%, 70%, 80%, 90%, 100%;
The ambient temperature is 60 ℃ to 85 ℃; for example, the ambient temperature may be set at, but is not limited to 60 ℃, 65 ℃, 70 ℃, 75 ℃, 80 ℃, 85 ℃;
the air pressure is 1.5 standard atmospheres to 2 standard atmospheres, and may be set to, for example, but not limited to, 1.5 standard atmospheres, 1.6 standard atmospheres, 1.7 standard atmospheres, 1.8 standard atmospheres, 2 standard atmospheres, and the like.
In the step, the film layer is in a water absorption environment, so that the film layer can fully absorb water and expand, and the contact area between the film layer and the electrode is gradually reduced in the expansion process, so that the binding force between the film layer and the electrode is gradually reduced, and the extraction of the micro light-emitting chip can be realized under the condition that the adhesive layer is not subjected to glue decomposition treatment.
For example, as shown in fig. 9-1, an adhesive layer 6 is disposed on the second substrate 5, after the first substrate 1 and the second substrate 5 are pressed together, the support body 4 is embedded into the adhesive layer 6, the thin film layer 3 and the electrode 22 are located outside the adhesive layer 6, and after the thin film layer 3 absorbs water and expands, the bonding area between the electrode 22 and the thin film layer 33 is reduced, and the bonding force between the two is reduced. In this example, the entire film layer 3 is located outside the adhesive layer 6, so that the bonding area between the film layer 3 and the support 4 after expansion is gradually reduced, and the bonding force therebetween is also reduced.
For another example, as shown in fig. 9-2, an adhesive layer 6 is disposed on the second substrate 5, and after the first substrate 1 and the second substrate 5 are pressed together, a portion of the support 4 and the film layer 3 are embedded in the adhesive layer 6, and the electrode 22 is located outside the adhesive layer 6. After the film layer 3 swells by absorbing water, the bonding area between the electrode 22 and the film layer 33 is reduced, and the bonding force therebetween is reduced. In this example, the bonding portion between the thin film layer 3 and the support 4 is also located in the adhesive layer 6, so that the bonding area between the thin film layer 3 and the support 4 is reduced by an amount smaller than that between the electrode 22 and the thin film layer 33, which is more beneficial to the peeling of the electrode and the thin film layer of the subsequent micro light-emitting chip.
It should be understood that, in some examples, step S703 may be performed first and then step S702 may be performed.
S704: and applying a pulling force away from the film layer to the micro light emitting chip so as to separate the micro light emitting chip from the film layer to finish the pickup of the micro light emitting chip.
In this embodiment, when the micro light emitting chip is picked up from the second substrate, a single pick-up mode may be adopted, a multiple batch pick-up mode may be adopted, and when the multiple batch pick-up mode is adopted, the micro light emitting chip may be selectively picked up according to specific application requirements. And it should be understood that when the micro light emitting chip is picked up from the second substrate in this embodiment, the micro light emitting chip may be picked up by a pick-up substrate, or may be picked up by an adsorption head or other modes, which may be specifically and flexibly selected according to the specific application requirement.
In this embodiment, when a tensile force far from the thin film layer is applied to the micro light emitting chip, the tensile force is greater than a binding force between the electrode of the micro light emitting chip and the thin film layer, the micro light emitting chip can be separated from the support. Therefore, when the micro light-emitting chip is picked up from the second substrate, the electrode of the micro light-emitting chip picked up on the second substrate can be directly separated from the film layer, so that the step of debonding the adhesive layer on the second substrate in a light or heat mode can be omitted, the micro light-emitting chip transferring process is simplified, and the convenience and the transferring efficiency of micro light-emitting chip transferring are improved.
S705: and transferring the picked micro light emitting chip to a target area.
The target area in this embodiment may be a die bonding area on a display back plane (the display back plane in this embodiment may be a display back plane of various electronic devices that need to use a micro light emitting chip to display or illuminate, for example, but not limited to, a display back plane of various display devices, or may be a die bonding area on another circuit board, or a corresponding area on another substrate, which may be specifically and flexibly set according to an application scenario, and will not be described herein.
Therefore, by adopting the transferring method of the micro light emitting chips provided by the embodiment, the water-swelling film layer and the supporting body for improving the epitaxial height of each electrode are sequentially formed on the electrodes of each micro light emitting chip, so that the electrodes of each micro light emitting chip can be reliably connected with the adhesive layer by the film layer and the supporting body in the chip transferring process, and the reliability and the success rate of chip transferring are improved; the contact area between each film layer after water absorption and expansion and the electrode becomes smaller to form a weakening structure, so that the electrode of the picked micro light-emitting chip can be directly separated from the film layer, the step of debonding the adhesive layer in a light or heat mode can be omitted, the micro light-emitting chip transferring process is simplified, the convenience and the transferring efficiency of micro light-emitting chip transferring are improved, the manufacturing period of the display backboard can be shortened, and the manufacturing cost is reduced.
Another alternative embodiment of the invention:
the embodiment provides a display backboard and a manufacturing method thereof, wherein a plurality of die bonding areas are arranged on the display backboard; in the method for manufacturing the display backboard, the micro light emitting chip on the growth substrate is transferred to the die bonding area to complete bonding, and the micro light emitting chip transferring method in the embodiment can be adopted but is not limited to the above.
The present embodiment also provides a display device, which may be an electronic device for displaying by using a display back panel made of a micro light emitting chip, for example, but not limited to, various intelligent mobile terminals, PCs, displays, electronic advertisement boards, etc., wherein the display back panel of the display device may be, but not limited to, made by using the above-mentioned method for making a display back panel.
In order to facilitate understanding, the present embodiment will be described below in terms of a micro light emitting chip transfer process in several application examples on the basis of the micro light emitting chip transfer method shown in the above embodiment.
Application example one:
the process of transferring the micro light emitting chip from the growth substrate (i.e., the first substrate) to the display back plate (other substrates or circuit boards are also possible) is shown in fig. 10-1 to 10-2, including but not limited to:
S1001: a first substrate 1 with micro light emitting chips grown thereon is provided.
In this application example, the electrode 22 may be formed on the first substrate 1 by epitaxially growing the epitaxial layer 21 on the first substrate.
S1002: film layers 3 independent of each other are formed on the electrodes of the respective micro light emitting chips on the first substrate 1.
In this embodiment, each micro light emitting chip is formed on the first substrate 1 in such a manner that the electrode of each micro light emitting chip is exposed upward, and a lithium fluoride thin film layer 3 is formed on the electrode 22 of each micro light emitting chip by vapor deposition, which has the characteristic of swelling due to water absorption, that is, the thin film expands after water absorption, so that the contact surface of the surface contacting with the thin film becomes smaller.
Referring to fig. 10-2, a plurality of micro light emitting chips including an epitaxial layer 21 and electrodes 22 are provided on a first substrate 1, and a thin film layer 3 is formed on each electrode 22, the thin film layer 3 entirely covering the cross section of the electrode 2.
Referring to fig. 10-2, the overall height of the support body 4 in this example is greater than the thickness of the adhesive layer 6.
S1003: a support is formed on the thin film layer 3 of each electrode 22.
For example, a strip-shaped silicon oxide support 4 may be formed on each thin film layer 3 by CVD.
S1004: the surface of the first substrate 1 with the micro light emitting chip is pressed with the surface of the second substrate 5 with the adhesive layer 6, so that each support 4 is embedded into the adhesive layer 6.
Referring to fig. 10-2, an adhesive layer 6 is disposed on the second substrate 5, and after the first substrate 1 and the second substrate 5 are pressed together, the support 4 is embedded into the adhesive layer 6, and the thin film layer 3 and the electrode 22 are located outside the adhesive layer 6. The electrodes of each micro light-emitting chip are reliably connected with the adhesive layer by the film layer and the supporting body, so that the reliability and success rate of chip transfer are improved.
S1005: the micro light emitting chip is separated from the first substrate 1.
In this step, when the micro light emitting chip is separated from the first substrate 1, LLO may be used, but is not limited to, to ensure that the micro light emitting chip is smoothly peeled off from the first substrate 1.
S1006: the second substrate 5 is placed in a water-absorbing environment, so that the film layer 3 absorbs water and swells, and the binding force between the film layer 3 and the electrode 22 becomes smaller during the swelling process.
In this application example, in order to improve the efficiency of the water expansion of the film layer, the ambient temperature and the air pressure may be properly improved, thereby improving the transfer efficiency. For example, the water absorbing environment may include, but is not limited to:
The air humidity is 50% to 100%; for example, the air humidity may be, but is not limited to, 50%, 60%, 70%, 80%, 90%, 100%;
the ambient temperature is 60 ℃ to 85 ℃; for example, the ambient temperature may be set at, but is not limited to 60 ℃, 65 ℃, 70 ℃, 75 ℃, 80 ℃, 85 ℃;
the air pressure is 1.5 standard atmospheres to 2 standard atmospheres, and may be set to, for example, but not limited to, 1.5 standard atmospheres, 1.6 standard atmospheres, 1.7 standard atmospheres, 1.8 standard atmospheres, 2 standard atmospheres, etc.;
the second substrate 5 may be placed in the water-absorbing environment for 4 hours to 16 hours. In this step, the film layer 3 is in a water-absorbing environment, and can absorb water and expand sufficiently, and the contact area between the film layer 3 and the electrode 22 becomes smaller gradually in the expansion process, so that the binding force between the film layer 3 and the electrode 22 becomes smaller gradually, and extraction of the micro light-emitting chip can be realized without performing the de-glue treatment on the adhesive layer 6.
For example, as shown in fig. 10-2, an adhesive layer 6 is disposed on the second substrate 5, after the first substrate 1 and the second substrate 5 are pressed together, the support body 4 is embedded into the adhesive layer 6, the thin film layer 3 and the electrode 22 are located outside the adhesive layer 6, and after the thin film layer 3 absorbs water and expands, the bonding area between the electrode 22 and the thin film layer 33 is reduced, and the bonding force between the two is reduced. In this example, the entire film layer 3 is located outside the adhesive layer 6, so that the bonding area between the film layer 3 and the support 4 after expansion is gradually reduced, and the bonding force therebetween is also reduced.
For another example, as shown in fig. 5-2, an adhesive layer 6 is disposed on the second substrate 5, and after the first substrate 1 and the second substrate 5 are pressed together, a portion of the support 4 and the film layer 3 are embedded in the adhesive layer 6, and the electrode 22 is located outside the adhesive layer 6. After the film layer 3 swells by absorbing water, the bonding area between the electrode 22 and the film layer 33 is reduced, and the bonding force therebetween is reduced. In this example, the bonding portion between the thin film layer 3 and the support 4 is also located in the adhesive layer 6, so that the bonding area between the thin film layer 3 and the support 4 is reduced by an amount smaller than that between the electrode 22 and the thin film layer 33, which is more beneficial to the peeling of the electrode and the thin film layer of the subsequent micro light-emitting chip.
S1007: the surface of the pick-up substrate 7 (which may be replaced by another type of transfer head, and is not described here), on which the pick-up bump 8 is disposed, is attached to the surface of the second substrate 5 on which the micro light emitting chip is mounted.
Referring to fig. 10-2, the pick-up substrate 7 is provided with a plurality of patterned pick-up bumps 8, the pick-up bumps 8 have a selective weak-adhesion adhesive layer, after the pick-up bumps 8 are attached to the second substrate 5, the adhesion force between the adhesive layer on the pick-up bumps 8 and the micro light emitting chips is greater than the adhesion force between the film layer 3 and the micro light emitting chips, so that the micro light emitting chips can be directly adhered and transferred without debonding the adhesive layer 6 on the second substrate 5, and the spacing between the pick-up bumps 8 can correspond to the pixel spacing on the display back panel (for example, in order to reduce the cost, the micro light emitting chips are manufactured more densely, and the spacing between the micro light emitting chips needs to be adjusted to be consistent with the pixel spacing of the display back panel).
S1008: the micro light emitting chips are picked up from the second substrate 5. In the picking process, the adhesion force between the adhesive layer on the picking up protrusion 8 and the micro light emitting chip is greater than the bonding force between the film layer 3 and the micro light emitting chip, so that the picked up micro light emitting chip on the second substrate 5 can be directly and smoothly separated from the supporting body 4.
S1009: the picked micro light emitting chip is transferred to the back plate film layer 10 on the back plate substrate 9, and specifically transferred to the die bonding area on the back plate film layer 10.
S1010: the bonding of the micro light emitting chip is completed, and the micro light emitting chip is separated from the pick-up bump 8.
Referring to fig. 10-2, in this application example, a metal Bump material (for example, but not limited to, tin Sn or indium In) required for bonding and welding may be prepared In advance In the die bonding area on the back plate film layer 10, and the electrode of the micro light emitting chip is butted with the Bump by pressure bonding, and then the Bump is melted by heating, so as to weld the electrode of the micro light emitting chip; after that, the pick-up substrate 7 is removed, and since the pick-up protrusion 8 of the pick-up substrate 7 has weak adhesion to the micro light emitting chip, the fixing force of the micro light emitting chip to the LED after the electrode binding is greater than the adhesion force of the pick-up protrusion 8 to the micro light emitting chip, the pick-up substrate 7 can be not de-adhered, and the separation from the pick-up substrate 7 can be completed, thereby completing the transfer of the micro light emitting chip to the die bonding area to complete the bonding. The whole process does not need to carry out complex debonding process treatment, and the second pause substrate is omitted, so that the chip transfer process is simplified, and the convenience and efficiency of chip transfer are improved. Meanwhile, the manufacturing period of the display backboard can be shortened, and the manufacturing cost is reduced.
Application example two:
the process of transferring the micro light emitting chip from the growth substrate (i.e., the first substrate) to the display back plate (other substrates or circuit boards are also possible) is shown in fig. 11-1 to 11-2, including but not limited to:
s1101: a first substrate 1 with micro light emitting chips grown thereon is provided.
In this application example, the electrode 22 may be formed on the first substrate 1 by epitaxially growing the epitaxial layer 21 on the first substrate.
S1102: film layers 3 independent of each other are formed on the electrodes of the respective micro light emitting chips on the first substrate 1.
In this embodiment, each micro light emitting chip is formed on the first substrate 1 in such a manner that the electrode of each micro light emitting chip is exposed upward, and a thin film layer 3 of an organic porous material is formed on the electrode 22 of each micro light emitting chip by vapor deposition, which has the characteristic of swelling due to water absorption, that is, swelling of the thin film layer after water absorption, so that the contact surface of the surface contacting with the thin film layer becomes small.
Referring to fig. 11-2, a plurality of micro light emitting chips including an epitaxial layer 21 and electrodes 22 are provided on a first substrate 1, and a thin film layer 3 is formed on each electrode 22, the thin film layer 3 entirely covering the cross section of the electrode 2.
S1103: a support is formed on the thin film layer 3 of each electrode 22.
For example, a strip-shaped silicon oxide support 4 may be formed on each thin film layer 3 by CVD.
Referring to fig. 11-2, the total height of the film layer 3 and the support 4 in this example is greater than the thickness of the adhesive layer 6.
S1104: the surface of the first substrate 1 with the micro light emitting chip is pressed with the surface of the second substrate 5 with the adhesive layer 6, so that each support 4 is embedded into the adhesive layer 6.
Referring to fig. 11-2, an adhesive layer 6 is disposed on the second substrate 5, and after the first substrate 1 and the second substrate 5 are pressed together, the film layer 3 and the support body 4 are embedded into the adhesive layer 6, and the electrode 22 is located outside the adhesive layer 6. The electrodes of each micro light-emitting chip are reliably connected with the adhesive layer by the film layer and the supporting body, so that the reliability and success rate of chip transfer are improved.
S1105: the micro light emitting chip is separated from the first substrate 1.
In this step, when the micro light emitting chip is separated from the first substrate 1, LLO may be used, but is not limited to, to ensure that the micro light emitting chip is smoothly peeled off from the first substrate 1.
S1106: the second substrate 5 is placed in a water-absorbing environment, so that the film layer 3 absorbs water and swells, and the binding force between the film layer 3 and the electrode 22 becomes smaller during the swelling process.
In this application example, in order to improve the efficiency of the water expansion of the film layer, the ambient temperature and the air pressure may be properly improved, thereby improving the transfer efficiency. For example, the water absorbing environment may include, but is not limited to:
the air humidity is 50% to 100%; for example, the air humidity may be, but is not limited to, 50%, 60%, 70%, 80%, 90%, 100%;
the ambient temperature is 60 ℃ to 85 ℃; for example, the ambient temperature may be set at, but is not limited to 60 ℃, 65 ℃, 70 ℃, 75 ℃, 80 ℃, 85 ℃;
the air pressure is 1.5 standard atmospheres to 2 standard atmospheres, and may be set to, for example, but not limited to, 1.5 standard atmospheres, 1.6 standard atmospheres, 1.7 standard atmospheres, 1.8 standard atmospheres, 2 standard atmospheres, etc.;
the second substrate 5 may be placed in the water-absorbing atmosphere for 6 hours to 14 hours. In this step, the film layer 3 is in a water-absorbing environment, and can absorb water and expand sufficiently, and the contact area between the film layer 3 and the electrode 22 becomes smaller gradually in the expansion process, so that the binding force between the film layer 3 and the electrode 22 becomes smaller gradually, and extraction of the micro light-emitting chip can be realized without performing the de-glue treatment on the adhesive layer 6.
For example, referring to fig. 11-2, an adhesive layer 6 is disposed on the second substrate 5, and after the first substrate 1 and the second substrate 5 are pressed together, a portion of the support 4 and the film layer 3 is embedded in the adhesive layer 6, and the electrode 22 is located outside the adhesive layer 6. After the film layer 3 swells by absorbing water, the bonding area between the electrode 22 and the film layer 33 is reduced, and the bonding force therebetween is reduced. In this example, the bonding portion between the thin film layer 3 and the support 4 is also located in the adhesive layer 6, so that the bonding area between the thin film layer 3 and the support 4 is reduced by an amount smaller than that between the electrode 22 and the thin film layer 33, which is more beneficial to the peeling of the electrode and the thin film layer of the subsequent micro light-emitting chip.
S1107: the surface of the pick-up substrate 7 (which may be replaced by another type of transfer head, and is not described here), on which the pick-up bump 8 is disposed, is attached to the surface of the second substrate 5 on which the micro light emitting chip is mounted.
Referring to fig. 11-2, the pick-up substrate 7 is provided with a plurality of patterned pick-up bumps 8, the pick-up bumps 8 have a selective weak-adhesion adhesive layer, after the pick-up bumps 8 are attached to the second substrate 5, the adhesion force between the adhesive layer on the pick-up bumps 8 and the micro light emitting chips is greater than the adhesion force between the film layer 3 and the micro light emitting chips, so that the micro light emitting chips can be directly adhered and transferred without debonding the adhesive layer 6 on the second substrate 5, and the spacing between the pick-up bumps 8 can correspond to the pixel spacing on the display back panel (for example, in order to reduce the cost, the micro light emitting chips are manufactured more densely, and the spacing between the micro light emitting chips needs to be adjusted to be consistent with the pixel spacing of the display back panel).
S1108: the micro light emitting chips are picked up from the second substrate 5. In the picking process, the adhesion force between the adhesive layer on the picking up protrusion 8 and the micro light emitting chip is greater than the bonding force between the film layer 3 and the micro light emitting chip, so that the picked up micro light emitting chip on the second substrate 5 can be directly and smoothly separated from the supporting body 4.
S1109: the picked micro light emitting chip is transferred to the back plate film layer 10 on the back plate substrate 9, and specifically transferred to the die bonding area on the back plate film layer 10.
S1110: the bonding of the micro light emitting chip is completed, and the micro light emitting chip is separated from the pick-up bump 8.
Referring to fig. 11-2, in this application example, a metal Bump material (for example, but not limited to, tin Sn or indium In) required for bonding and welding may be prepared In advance In the die bonding area on the back plate film layer 10, and the electrode of the micro light emitting chip is butted with the Bump by pressure bonding, and then the Bump is melted by heating, so as to weld the electrode of the micro light emitting chip; after that, the pick-up substrate 7 is removed, and since the pick-up protrusion 8 of the pick-up substrate 7 has weak adhesion to the micro light emitting chip, the fixing force of the micro light emitting chip to the LED after the electrode binding is greater than the adhesion force of the pick-up protrusion 8 to the micro light emitting chip, the pick-up substrate 7 can be not de-adhered, and the separation from the pick-up substrate 7 can be completed, thereby completing the transfer of the micro light emitting chip to the die bonding area to complete the bonding. The whole process does not need to carry out complex debonding process treatment, and the second pause substrate is omitted, so that the chip transfer process is simplified, and the convenience and efficiency of chip transfer are improved. Meanwhile, the manufacturing period of the display backboard can be shortened, and the manufacturing cost is reduced.
Therefore, according to the transfer method of the micro light-emitting chips, the electrodes of the micro light-emitting chips are reliably connected with the adhesive layer by the aid of the film layer and the support body, so that the reliability and success rate of chip transfer are improved;
according to the transfer method of the miniature light-emitting chip, complex debonding process treatment is not needed in the whole process, and the setting treatment of the second pause substrate can be omitted, so that the chip transfer process is simplified, and the convenience and efficiency of chip transfer are improved.
It should be noted that the transferring method of the micro light emitting chip provided by the application is not only applicable to micro-LEDs, but also applicable to LEDs with common sizes.
It is to be understood that the invention is not limited in its application to the examples described above, but is capable of modification and variation in light of the above teachings by those skilled in the art, and that all such modifications and variations are intended to be included within the scope of the appended claims.
Claims (10)
1. A miniature light emitting chip assembly, comprising:
a first substrate;
a plurality of micro light emitting chips formed on a front surface of the first substrate, electrodes of the plurality of micro light emitting chips being away from the front surface of the first substrate;
Mutually independent thin film layers formed on the electrodes of the micro light emitting chips, wherein the thin film layers have water absorption expansion characteristics;
and a support body formed on each of the film layers and independent of each other.
2. The miniature light emitting chip assembly of claim 1, wherein said thin film layer is a lithium fluoride layer, or a porous organic material layer.
3. The miniature light emitting chip assembly of claim 1 or 2, wherein said support is a silicon oxide layer or a silicon nitride layer.
4. The miniature light emitting chip assembly according to claim 1 or 2, wherein an area of the thin film layer bonded to the electrode is smaller than an area of the thin film layer bonded to the support.
5. A method of fabricating a micro-light emitting chip assembly according to any one of claims 1-4, comprising:
forming mutually independent film layers on the electrodes of each micro light-emitting chip on the first substrate respectively, wherein the film layers have water absorption expansion characteristics;
forming a mutually independent support on the film layers of each electrode.
6. The method of manufacturing a micro light emitting chip assembly according to claim 5, wherein forming the mutually independent thin film layers on the electrodes of the micro light emitting chips on the first substrate comprises:
And forming the film layers on the electrodes respectively through evaporation.
7. The method of manufacturing a micro light emitting chip assembly as set forth in claim 5 or 6, wherein the forming a mutually independent support on the thin film layer of each of the electrodes includes:
forming a support layer covering each of the micro light emitting chips and the thin film layer on the first substrate;
and (3) reserving the supporting layers on the film layers, removing the supporting layers in other areas, and reserving the supporting layers on the film layers to form the supporting body.
8. A micro light emitting chip transfer method, comprising:
providing the miniature light emitting chip assembly according to any one of claims 1-4, and pressing the first substrate and the surface of the second substrate on which the adhesive layer is formed, so that each supporting body is embedded into the adhesive layer, and the supporting body supports the miniature light emitting chip on the second substrate;
separating the micro light emitting chip from the first substrate;
placing the second substrate in a water absorption environment to enable the film layer to absorb water and expand, and reducing the binding force between the film layer and the electrode in the expansion process;
Applying a pulling force to the micro light emitting chip far away from the film layer so as to separate the micro light emitting chip from the film layer to finish picking up the micro light emitting chip;
and transferring the picked micro light emitting chip to a target area.
9. The micro light emitting chip transfer method of claim 8, wherein the water absorbing environment comprises:
the air humidity is 50% to 100%;
the ambient temperature is 60 ℃ to 85 ℃;
the air pressure is 1.5 standard atmospheres to 2 standard atmospheres.
10. The method of transferring a micro light emitting chip as set forth in claim 9, wherein a height of the support is equal to or greater than a thickness of the adhesive layer;
or the sum of the heights of the film layer and the support body is larger than the thickness of the adhesive layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202011013961.8A CN114256400B (en) | 2020-09-24 | 2020-09-24 | Micro light-emitting chip assembly, manufacturing method thereof and micro light-emitting chip transferring method |
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| CN202011013961.8A CN114256400B (en) | 2020-09-24 | 2020-09-24 | Micro light-emitting chip assembly, manufacturing method thereof and micro light-emitting chip transferring method |
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| Publication Number | Publication Date |
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| CN109728164A (en) * | 2019-01-03 | 2019-05-07 | 京东方科技集团股份有限公司 | A kind of display panel and preparation method thereof, OLED display |
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| CN114284420A (en) * | 2021-12-27 | 2022-04-05 | 深圳市聚飞光电股份有限公司 | Light emitting unit, manufacturing method thereof and light emitting assembly |
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| WO2020039293A1 (en) * | 2018-08-24 | 2020-02-27 | 株式会社半導体エネルギー研究所 | Light emitting apparatus, light emitting module, electronic device, and manufacturing method for light emitting apparatus |
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| CN102992629A (en) * | 2012-12-12 | 2013-03-27 | 中国科学院福建物质结构研究所 | Glass ceramic for white LED excited by near UV and preparation method thereof |
| CN106935732A (en) * | 2017-05-18 | 2017-07-07 | 京东方科技集团股份有限公司 | A kind of thin-film packing structure and its method for packing, OLED device |
| CN109728164A (en) * | 2019-01-03 | 2019-05-07 | 京东方科技集团股份有限公司 | A kind of display panel and preparation method thereof, OLED display |
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