CN112967980B - Chip transfer assembly, manufacturing method thereof and chip transfer method - Google Patents
Chip transfer assembly, manufacturing method thereof and chip transfer method Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
The invention relates to a chip transfer assembly, a manufacturing method thereof and a chip transfer method. The chip transfer assembly transfers the substrate; a porous adhesive layer formed on the transfer substrate, wherein first pores are distributed in the porous adhesive layer; colloid bulges are formed on the porous adhesive layer, the colloid bulges have light transmission, and second pores for accommodating the luminescence conversion particles are distributed in the colloid bulges; in the chip transfer process, the light-emitting conversion particles are contained in the second pores, the LED chip adsorbed by the colloid bulges is transferred to a chip welding area, and in the welding process of the LED chip completed by heating, the contact surface between the colloid bulges and the porous adhesive layer forms a separation surface under the action of a thermal effect, so that the colloid bulges are separated from the porous adhesive layer and are kept on the light-emitting surface of the LED chip as a light-emitting conversion layer, and the light-emitting conversion layer does not need to be prepared independently, so that the manufacturing process of the display panel can be simplified, the manufacturing efficiency is improved, and the manufacturing cost is reduced.
Description
Technical Field
The invention relates to the field of semiconductor devices, in particular to a chip transfer assembly, a manufacturing method thereof and a chip transfer method.
Background
Micro-LEDs (Micro-Light Emitting diodes) are a new generation of display technology. Compared with the existing liquid crystal display, the flexible display panel has higher photoelectric efficiency, higher brightness, higher contrast ratio and lower power consumption, and can be combined with a flexible panel to realize flexible display.
The Micro-LED display panel comprises a plurality of pixel areas, and each pixel area comprises a red LED chip, a blue LED chip and a green LED chip. In the manufacturing process of the display panel, the blue LED chip needs to be transferred from the growth substrate to the display back plate of the display panel, and then a red light Quantum Dot (QD) film and a green light Quantum dot film are separately manufactured on the blue LED chip on which red light and green light need to be formed on the display back plate, so as to convert the light emitted by the corresponding blue LED chip into corresponding red light and green light. The blue light LED chips are firstly transferred to the display back plate, and then the thin film mode for light emitting conversion is independently made on the corresponding blue light LED chips, so that the process flow is more complicated, the efficiency is low, and the manufacturing cost of the display panel is high.
Therefore, how to simplify the manufacturing process of the display panel, increase the manufacturing efficiency and reduce the cost is a problem that needs to be solved urgently.
Disclosure of Invention
In view of the above-mentioned deficiencies of the related art, an object of the present invention is to provide a chip transfer assembly, a method for manufacturing the same, and a chip transfer method, which are used to solve the problems of complicated manufacturing process, low manufacturing efficiency, and high cost of a display panel in the related art.
A chip transfer assembly comprising:
transferring the substrate;
the transfer substrate comprises a porous adhesive layer formed on the transfer substrate, wherein first pores are distributed in the porous adhesive layer;
colloid bulges are formed on the porous adhesive layer, the colloid bulges have light transmission, second pores are distributed in the colloid bulges, and the sizes of the second pores are matched with the sizes of the luminescence conversion particles and are smaller than the sizes of the first pores;
the second hole is used for accommodating the light-emitting conversion particles in the light-emitting diode chip transfer process, and the colloid bulge is used for completing the adsorption of the light-emitting diode chip under the action of temperature reduction after being heated after being attached to the light-emitting surface of the light-emitting diode chip to be transferred in the light-emitting diode chip transfer process; and the separation surface is formed on the contact surface between the porous adhesive layer and the chip bonding area under the action of thermal effect in the process of heating and completing the welding of the light-emitting diode chip after the absorbed light-emitting diode chip is transferred to the chip bonding area, so that the light-emitting diode chip is separated from the porous adhesive layer and is kept on the light-emitting surface of the light-emitting diode chip.
When the LED chip is transferred to the chip welding area on the display back plate by utilizing the chip transfer assembly, the LED chip to be transferred needing luminescence conversion can be directly accommodated with luminescence conversion particles through the second pore of the transfer bulge, and after the LED chip is transferred to the chip welding area through the transfer bulge and welding is completed, the transfer bulge with the luminescence conversion particles is separated from the porous adhesive layer on the transfer substrate and is reserved on the light-emitting surface of the LED chip to form the luminescence conversion layer.
Based on the same inventive concept, the present application further provides a method for manufacturing a chip transfer assembly, which is characterized by comprising:
providing a transfer substrate;
forming a porous adhesive layer on the transfer substrate, wherein first pores are distributed in the porous adhesive layer;
form the colloid arch on the porous glue film, the colloid arch has the light transmissivity, just it has the second pore to distribute in the colloid arch, the size in second pore and the size phase-match of luminous conversion granule, and be less than the size in first pore.
The manufacturing method of the chip transfer assembly is simple and convenient in manufacturing process, high in manufacturing efficiency and low in cost.
Based on the same inventive concept, the application also provides a chip transfer method, which comprises the following steps:
infiltrating the colloid bumps of the chip transfer assembly into the luminescence conversion particles so that the luminescence conversion particles enter the second pores;
attaching the colloid bumps to the light-emitting surface of the LED chip to be transferred, heating the colloid bumps to a first preset temperature, and cooling to enable the colloid bumps to complete adsorption of the LED chip and complete pickup of the LED chip;
and transferring the LED chip picked up by the colloid projection to a chip welding area preset with solder, and melting the solder to realize the welding of the LED chip by heating to a second preset temperature.
According to the chip transfer method, in the process of transferring the LED chip to the chip welding area, the chip transfer and the manufacture of the light-emitting conversion layer are completed simultaneously, so that the light-emitting conversion layer does not need to be prepared independently after the LED chip is transferred to the repair welding area of the display back plate, the manufacturing process of the display panel can be simplified, the manufacturing efficiency is improved, and the manufacturing cost is reduced.
Based on the same inventive concept, the application also provides a display panel, which comprises a display back plate and a plurality of LED chips, wherein the display back plate is provided with a plurality of chip welding areas, and the LED chips are respectively transferred to the chip welding areas by the chip transfer method to complete bonding.
According to the display panel, the simplified and efficient LED chip transfer and light conversion film preparation method is adopted, so that the display panel is more convenient and efficient to manufacture, the system period of the display panel is shortened to a certain extent, and the manufacturing cost of the display panel is reduced.
Drawings
Fig. 1 is a first schematic structural diagram of a chip transfer assembly according to an embodiment of the present invention;
FIG. 2-1 is a schematic view of the chip transfer assembly of FIG. 1 with luminescent conversion particles impregnated therein;
FIG. 2-2 is a schematic view of the chip transfer assembly of FIG. 1 after being impregnated with luminescence conversion particles;
FIG. 3 is a second schematic structural diagram of a chip transfer assembly according to an embodiment of the present invention;
FIG. 4 is a schematic view of the chip transfer assembly of FIG. 3 after being impregnated with luminescence conversion particles;
FIG. 5 is a schematic view of a manufacturing process of a chip transfer assembly according to another alternative embodiment of the present invention;
FIG. 6-1 is a schematic view of a process for forming a porous adhesive layer according to another alternative embodiment of the present invention;
FIG. 6-2 is a schematic view of a porous adhesive layer formed according to another alternative embodiment of the present invention;
FIG. 7-1 is a schematic view of a process for forming colloid bumps according to another alternative embodiment of the present invention;
fig. 7-2 is a schematic diagram of colloid bumps on a temporary transfer substrate according to another alternative embodiment of the present invention;
fig. 7-3 is a schematic diagram illustrating a bonding of a colloid projection and a porous adhesive layer on a temporary transfer substrate according to another alternative embodiment of the present invention;
fig. 7-4 are schematic diagrams illustrating the temporary transfer substrate separated from the colloid bumps according to another alternative embodiment of the present invention;
FIG. 8 is a schematic cross-sectional view of a porous adhesive layer and a colloid projection according to another alternative embodiment of the present invention;
FIG. 9 is a flowchart illustrating a chip transfer method according to yet another alternative embodiment of the present invention;
FIG. 10-1 is a schematic view of an LED chip on a growth substrate according to yet another alternative embodiment of the present invention;
FIG. 10-2 is a top view of the LED chip on the growth substrate of FIG. 10-1;
FIG. 10-3 is a schematic view of the bonding of the LED chip on the growth substrate of FIG. 10-1 to the adhesive layer on the temporary transfer substrate;
fig. 10-4 are schematic diagrams illustrating an LED chip transferred onto a temporary transfer substrate according to yet another alternative embodiment of the present invention;
FIG. 10-5 is a top view of the LED chip of FIG. 10-4 after transfer to a temporary transfer substrate;
FIG. 11 is a first schematic diagram illustrating a chip transfer process according to yet another alternative embodiment of the present invention;
FIG. 12 is a second schematic diagram illustrating a chip transfer process according to yet another alternative embodiment of the present invention;
description of reference numerals:
1-transfer substrate, 2-porous glue layer, 21-first pore, 3-colloid bump, 31-second pore, 32-contact surface between colloid bump and LED chip, 33-contact surface between colloid bump and porous glue layer, 4-luminescence conversion particle, 5-temporary transfer substrate, 6-temporary substrate, 7-LED chip, 8-display back plate, 9-solder, 10-substrate, 101-temporary substrate covering area, 11-adhesion layer.
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present application are given in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
In the prior art, when the display panel is manufactured, the blue light LED chip is firstly transferred to the display back plate, and then the film for light emitting conversion is independently manufactured on the corresponding blue light LED chip, so that the process flow is more complicated, the efficiency is low, and the manufacturing cost of the display panel is high. .
Based on this, the present application intends to provide a solution to the above technical problem, the details of which will be explained in the following embodiments.
The chip transfer assembly exemplified in the present embodiment includes: the transfer substrate is provided with a porous adhesive layer, and first pores are distributed in the porous adhesive layer; and the colloid projection is formed on the porous adhesive layer, has light transmittance, is distributed with second pores, and has a size matched with that of the luminescence conversion particles so as to contain the luminescence conversion particles and keep the luminescence conversion particles in the second pores. Wherein the size of the second pores is smaller than the size of the first pores in the porous glue layer.
When the chip transfer assembly of this embodiment is used for chip transfer, when the LED chip to be transferred is a chip that needs to be subjected to light emitting conversion processing, the light emitting conversion particles may be disposed in the second pores of the colloid projection, and then the colloid projection is attached to the light emitting surface of the LED chip to be transferred, wherein the colloid projection completes the adsorption of the LED chip under the action of cooling after being heated, so as to transfer the LED chip to be transferred to the corresponding chip bonding region by adsorption and pickup, and then the soldering of the LED chip is completed by, but not limited to, heating, in this process, the contact surface between the colloid projection and the porous adhesive layer forms a separation surface under the action of thermal effect, so that the subsequent colloid projection is separated from the porous adhesive layer and remains on the light emitting surface of the LED chip, and the light emitting conversion particles are distributed in the second pores of the colloid projection, so that the colloid projection is formed into a luminescence conversion layer (also called as luminescence conversion film) arranged on the light-emitting surface of the LED chip. That is, the chip transfer assembly in the embodiment can be used as a transfer head in the transfer process of the LED chip, and after the LED chip is transferred to the chip bonding area and is welded, the colloid projection and the porous adhesive layer are separated and remain on the light emitting surface of the LED chip to be used as a light emitting conversion layer of the LED chip. The LED display panel has the advantages that the chip transfer and the light-emitting conversion layer manufacturing are simultaneously completed in the process of transferring the LED chip to the chip welding area, so that the light-emitting conversion layer does not need to be separately prepared after the LED chip is transferred to the repair welding area of the display back panel, the manufacturing process of the display panel can be simplified, the manufacturing efficiency is improved, and meanwhile the manufacturing cost is reduced.
It should be understood that, for the LED chip to be transferred, which is an LED chip that does not need to undergo a light emitting conversion process, the light emitting conversion particles may not be disposed in the second apertures of the colloid bumps, the corresponding colloid bumps are directly attached to the light emitting surface of the LED chip to be transferred, and the LED chip is transferred to the chip bonding area through the above-mentioned similar transfer process to complete the bonding. Of course, it should also be understood that various other LED chip transfer methods may be adopted for LED chips that do not need to be subjected to the luminescence conversion process, and are not described herein again.
It should be understood that the LED chip in this embodiment may be a general-size LED chip, and may also be a micro LED chip, where the micro LED chip may include but is not limited to at least one of a micro-LED chip and a mini-LED chip, for example, in one example, the micro LED chip may be a micro-LED chip; in yet another example, the micro LED chip may be a mini-LED chip.
It should be understood that the LED chip in the present embodiment may include, but is not limited to, at least one of a flip LED chip and a front-mounted LED chip, for example, in one example, the LED chip may be a flip LED chip; in yet another example, the LED chip may be a front-mounted LED chip.
In an example of the present embodiment, the LED chip may include, but is not limited to, an epitaxial layer and an electrode, and the present embodiment does not limit a specific structure of the epitaxial layer of the LED chip, and in an example, the epitaxial layer of the LED chip may include an N-type semiconductor, a P-type semiconductor, and an active layer located between the N-type semiconductor and the P-type semiconductor, and the active layer may include a quantum well layer, and may also include other structures. In other examples, the epitaxial layer may further optionally include at least one of a reflective layer and a passivation layer. The material and shape of the electrodes in this embodiment are not limited, and for example, the material of the electrodes may include, but is not limited to, at least one of Cr, Ni, Al, Ti, Au, Pt, W, Pb, Rh, Sn, Cu, and Ag.
It should be understood that, in the present embodiment, the specific distribution number of the first pores distributed in the porous adhesive layer (i.e. the porosity of the porous adhesive layer (and the ratio of the volume occupied by the pores to the total volume of the porous adhesive layer)) may be flexibly set according to a specific application scenario, for example, the porosity may be set to be but not 25%, 30%, 40%, and the like. The size of the first aperture can also be flexibly set according to the specific application requirements. For example, in some application examples, the size of the first pore may be set to, but is not limited to, 50 nm to 1000 nm, and in a specific application, the size of the first pore may be set to 50 nm, 100 nm, 200 nm, 300 nm, 500 nm, 600 nm, 750 nm, 800 nm, 900 nm, 1000 nm according to requirements. In addition, it should be understood that the size of the first pores distributed in the porous subbing layer may be the same or different.
Similarly, it should be understood that, in the embodiment, the specific distribution number of the second pores distributed in the colloid projection (that is, the porosity of the colloid projection) may be flexibly set according to a specific application scenario, for example, the porosity of the colloid projection may be set to be but not 25%, 35%, 40%, and the like, and the porosity of the colloid projection may be the same as or different from the porosity of the porous adhesive layer. The size of the second aperture can also be flexibly set according to the specific application requirements, for example, the size of the specifically adopted luminescence conversion particle can be flexibly set, and the luminescence conversion particle can be a quantum dot particle or a phosphor particle or other particles capable of playing a luminescence conversion role. For example, in some application examples, the size of the second pore may be set to be, but not limited to, 6 nm to 30 nm, and in a specific application, the size of the first pore may be set to be 6 nm, 8 nm, 10 nm, 11 nm, 15 nm, 18 nm, 20 nm, 25 nm, 28 nm, 30 nm, according to requirements. In addition, it should be understood that the size of the plurality of second pores distributed in the colloid projection may be the same or different.
It is understood that the material and shape of the transfer substrate are not limited in this embodiment, and for example, the transfer substrate may be any one of, but not limited to, glass, sapphire, quartz and silicon. In this embodiment, the material of the porous adhesive layer can also be flexibly selected, for example, in an application scenario, the porous adhesive layer can be but is not limited to a Polydimethylsiloxane (PDMS) system adhesive layer. Similarly, the material of the colloid projection in this embodiment can also be flexibly selected, for example, in some application scenarios, the material of the colloid projection can be, but is not limited to, silicone system colloid or acrylic resin.
It can be understood that the number of colloid protrusions formed on the porous adhesive layer in the embodiment can be flexibly set according to specific application scenarios. For example, for an application scenario of single LED chip transfer, a single colloid projection may be formed on the porous adhesive layer, or a plurality of colloid projections may be formed but used one by one during the transfer process. For an application scenario of single transfer of multiple LED chips, multiple colloid protrusions may be formed on the porous adhesive layer, and the position distribution of the multiple colloid protrusions on the multilayer adhesive layer corresponds to the position distribution of the multiple LED chips to be transferred, that is, the multiple colloid protrusions are formed according to the multiple LED chips to be transferred in a graphical manner.
It should be understood that the shape of the colloid projection in the present embodiment can be flexibly configured, for example, it can be configured as a regular shape (such as a cylinder, a rectangular parallelepiped, etc.), or can be configured as an irregular shape. In other application examples of the embodiment, in order to further facilitate the separation between the colloid protrusion and the porous adhesive layer, an area of a contact surface between the colloid protrusion and the porous adhesive layer may be set smaller than an area of a contact surface between the colloid protrusion and the LED chip. In the present application example, the cross-sectional shape of the colloid projection in the height direction may be, but is not limited to, a trapezoid, and may be any other shape satisfying the above condition.
For the convenience of understanding, the present embodiment will be described below with reference to the accompanying drawings.
Referring to the example shown in fig. 1, the chip transfer assembly in this example includes a transfer substrate 1, a porous adhesive layer 2 disposed on the transfer substrate 1, and first pores 21 distributed in the porous adhesive layer 2; the chip transfer assembly further comprises a plurality of (or single) colloid bumps 3 arranged on the porous adhesive layer 2, wherein second pores 31 are distributed in the colloid bumps 3, and the size of the second pores 31 is smaller than that of the first pores 21. And the colloid projection 3 has light transmittance. The shape of the interface in the height direction of the colloid projection 3 shown in fig. 1 is rectangular, and may be set to other shapes as required, which is not described herein again.
In some application scenarios, when the LED chip to be transferred needs to be subjected to light emission conversion processing, for example, when the blue LED chip needs to be converted into an application scenario such as red light or green light, before the blue LED chip is transferred by using the chip transfer assembly shown in fig. 1, corresponding light emission conversion particles (for example, light emission conversion particles for converting blue light into red light, or light emission conversion particles for converting blue light into green light) may be disposed in the second apertures 31 of the corresponding colloid bumps 3. As shown in fig. 2-1, the colloid bumps 3 of the chip transfer assembly can be immersed in the luminescence conversion particles 4, so that the luminescence conversion particles 4 enter the second pores 31, and the chip transfer assembly shown in fig. 2-2 is finally obtained; then, the chip transfer assembly shown in fig. 2-2 can be used to complete the transfer of the corresponding blue LED chip in the above exemplary manner, and the colloid projection 3 with the internal distribution of the luminescence conversion particles finally remains on the light emitting surface of the blue LED chip, and serves as the luminescence conversion layer of the blue LED chip to convert the blue light emitted therefrom into the desired red light or green light or other colors of light.
Referring to the example shown in fig. 3, the chip transfer assembly in this example also includes a transfer substrate 1, a porous adhesive layer 2 disposed on the transfer substrate 1, and first pores 21 distributed in the porous adhesive layer 2; the chip transfer assembly also comprises a plurality of colloid bulges 3 (which can also be arranged as a single body according to requirements) arranged on the porous adhesive layer 2, wherein second pores 31 are distributed in the colloid bulges 3, and the size of the second pores 31 is smaller than that of the first pores 21. And the colloid projection 3 has light transmittance. The interface shape of the colloid projection 3 in the height direction shown in fig. 2 is trapezoidal, and the area of the contact surface 33 between the colloid projection 3 and the porous adhesive layer 2 is smaller than the area of the contact surface 32 between the colloid projection 3 and the LED chip, so that the subsequent colloid projection 3 can be separated from the porous adhesive layer 2 and is retained on the light-emitting surface of the LED chip as a light-emitting conversion layer. The form of the luminescent conversion particles disposed in the porous adhesive layer 2 according to requirements is shown in fig. 4.
It should be understood that the forming process of the porous adhesive layer and the colloid projection in the above examples in this embodiment can be flexibly selected, and this embodiment does not limit the formation process.
Another alternative embodiment of the invention:
for ease of understanding, the present embodiment provides an exemplary method for manufacturing a chip transfer module, please refer to fig. 5, which includes but is not limited to:
s501: a transfer substrate is provided. In this embodiment, the material and shape of the transfer substrate are not limited, for example, the transfer substrate may be any one of, but not limited to, glass, sapphire, quartz, and silicon.
S502: forming a porous adhesive layer on the transfer substrate, wherein first pores are distributed in the porous adhesive layer; the material and the forming process of the porous adhesive layer can be flexibly selected. For example, in one example, the porous adhesive layer is a polydimethylsiloxane system adhesive layer, and an example formation process is shown in fig. 6-1, including but not limited to:
s601: dilute the polydimethylsiloxane system colloid. For example, but not limited to, xylene may be used to dilute the polydimethylsiloxane system colloid to facilitate dispersion of the first soluble particles and to avoid agglomeration as much as possible.
S602: adding the first soluble particles into the diluted polydimethylsiloxane system colloid and uniformly stirring.
The first soluble particles are selected to have a property of being soluble at a certain temperature, and may include, but are not limited to, at least one of sugar particles (e.g., glucose particles or sucrose particles), salt particles (e.g., sodium chloride particles), and the like, and the size of the selected first soluble particles may be flexibly selected according to the requirement of the first pores to be formed, for example, the size of the selected first soluble particles may be correspondingly selected from 50 nm to 1000 nm.
S603: and arranging the polydimethylsiloxane system colloid mixed with the first soluble particles on a transfer substrate, and curing to form a polydimethylsiloxane system adhesive layer.
In some examples, the polydimethylsiloxane system colloid mixed with the first soluble particles can be coated on the transfer substrate by, but not limited to, a coating method (e.g., a spinning method), and the coating thickness can be flexibly set according to requirements. Thermal curing (e.g., 30 minutes at 80 ℃) may be used, but is not limited to, after coating.
S604: and removing the first soluble particles in the glue layer of the cured polydimethylsiloxane system through water bath (water bath), wherein the space occupied by the first soluble particles forms a first pore.
The water bath in this example is a heating method in a chemical laboratory with water as a heat transfer medium. The method is suitable for heating temperature below 100 deg.C, and can dissolve the mixed first soluble particles (such as saccharide particles or salts) at a certain temperature, so that the first pores are formed by the space occupied by the first soluble particles. As shown in fig. 6-2, first pores are distributed in the porous adhesive layer 2 formed on the transfer substrate 1, and the porosity of the first pores in the porous adhesive layer 2 obtained in this example is about 30%.
S503: colloid bulges are formed on the porous adhesive layer, the colloid bulges have light transmission, second pores are distributed in the colloid bulges, and the sizes of the second pores are matched with the sizes of the luminescence conversion particles and are smaller than the sizes of the first pores.
The material and forming process of the colloid projection can also be flexibly selected, and an exemplary forming process is shown in fig. 7, which includes but is not limited to:
s701: and (4) diluting the target colloid.
The target colloid can be organic silicon system colloid or acrylic resin, for example, xylene can be adopted for diluting the target colloid, and the target colloid is convenient for dispersing the second soluble particles after dilution, so that the agglomeration is avoided as far as possible.
S702: and adding the second soluble particles into the diluted target colloid and uniformly stirring.
The second soluble particles are selected to have a property of being soluble at a certain temperature, and may include, but are not limited to, at least one of sugar particles (e.g., glucose particles or sucrose particles), salt particles (e.g., sodium chloride particles), and the like, and the size of the second soluble particles may be flexibly selected according to the requirement of the second pores to be formed, for example, the size of the second soluble particles may be selected to be 6 nm to 30 nm, and the size of the second soluble particles is smaller than that of the first soluble particles.
S703: and setting the target colloid mixed with the second soluble particles on the temporary transfer substrate for solidification to form colloid bulges.
In some examples, the target colloid mixed with the second soluble particles may be coated on the temporary transfer substrate by, but not limited to, a coating manner (e.g., a spinning spin coating manner), and the coating thickness may be flexibly set according to requirements; after coating, the coating can be cured by, but not limited to, thermal curing (e.g., 30 minutes at 80 ℃) or ultraviolet curing, and then the corresponding colloid projection is formed by cutting, or time-of-day curing.
S704: and removing the second soluble particles in the solidified colloid protrusions through water bath, wherein the space originally occupied by the second soluble particles forms second pores. Referring to fig. 7-2, colloid projection 3 is formed on temporary transfer substrate 5, and second pores 31 are distributed in colloid projection 3.
S704: and the colloid bumps on the temporary transfer substrate are attached to the porous adhesive layer on the transfer substrate, and the temporary transfer substrate is separated from the colloid bumps, so that the colloid bumps are formed on the porous adhesive layer.
Referring to fig. 7-3 and 7-4, an exemplary process is shown, in which the colloid projection 3 formed on the temporary transfer substrate 5 is attached to the porous adhesive layer 2 on the transfer substrate 1, and then the temporary transfer substrate 5 is separated from the colloid projection 3, and the colloid projection 3 is remained on the porous adhesive layer 2.
In this example, the enlarged sectional view of the obtained physical product with the porous adhesive layer and the colloid projection is shown in fig. 8, and pores are distributed in the product with a sponge-like shape.
It should be understood that the above-mentioned manufacturing method of the chip transfer assembly is only an exemplary method for manufacturing the chip transfer assembly in the present embodiment, and the manufacturing of the chip transfer assembly in the present embodiment is not limited to the above-mentioned exemplary method. However, it can be seen from the above exemplary method that the chip transfer module in this embodiment has a simple and convenient manufacturing process, high manufacturing efficiency, and low cost.
Yet another alternative embodiment of the invention:
for ease of understanding, the present embodiment is exemplified below by a method of performing chip transfer using the above-described chip transfer assembly. Please refer to fig. 9, which includes:
s901: and infiltrating the colloid bumps of the chip transfer assembly with the luminescence conversion particles so that the luminescence conversion particles enter the second pores.
It should be understood that when the LED chip to be transferred is a chip that does not require a luminescence conversion process, the next step may be directly proceeded; of course, other chip transfer methods may be adopted to transfer the chip, and are not described herein again.
S902: the colloid bulges are attached to the light-emitting surface of the LED chip to be transferred, and the colloid bulges are cooled after being heated to the first preset temperature, so that the colloid bulges complete the adsorption of the LED chip, and the LED chip is picked up.
In this embodiment, before the colloid projection is attached to the light emitting surface of the LED chip to be transferred (or after the colloid projection is attached), the chip transfer assembly (which is used as a transfer head at this time) is heated to a first preset temperature, so that the porous adhesive layer and the porous material of the colloid projection are in a state of low gas density and large volume. Then the colloid projection is attached to the light-emitting surface of the LED chip to be transferred, under the thermal condition, the colloid projection is contacted with the LED chip, and the temperature is reduced after the contact, so that the gas in the pores in the porous adhesive layer and the porous material of the colloid projection is cooled, and the volume of the gas is shrunk, so that on one hand, the colloid of the colloid projection is bonded to the LED chip through hydrogen bonds or Van der Waals force, and on the other hand, the adhesive force of the colloid projection to the LED chip is increased through the change of air pressure generated by the gas after the volume shrinkage; and then stripping the LED chip from the temporary substrate or the growth substrate on which the LED chip is positioned, and finishing the pickup of the LED chip. The first preset temperature in the present embodiment may be, but is not limited to, 60 ℃ to 80 ℃, and may be set to, for example, 60 ℃, 65 ℃, 75 ℃, 80 ℃, or the like.
S903: and transferring the LED chip picked up by the colloid projection to a chip welding area preset with solder, melting the solder to realize the welding of the LED chip by heating to a second preset temperature, and simultaneously forming a separation surface on a contact surface between the colloid projection and the porous adhesive layer under the action of a heat effect so as to facilitate the separation of the subsequent colloid projection and the porous adhesive layer and retain the separation surface on the light-emitting surface of the LED chip.
In this embodiment, the LED chip picked up by the colloid projection is transferred to the chip bonding area preset with solder, and then heated again to raise the overall temperature, so that the solder melts to realize the bonding between the LED chip and the backplane circuit pad, but in this process, the temperature rises, because the first pore of the porous adhesive layer is larger than the second pore of the colloid projection, and the porous materials of the porous adhesive layer and the colloid projection are in a state of lower gas density and larger volume, and the volume increase between the two will generate a repulsive force, when the thermal effect is separated, the separation surface is formed on the contact surface part of the porous adhesive layer and the colloid projection, so that the bonding force between the porous adhesive layer and the colloid projection is smaller than the bonding force between the colloid projection and the LED chip, and the colloid projection can be smoothly separated from the porous adhesive layer, so that the colloid projection immersed with the light-emitting conversion particles will remain on the LED chip by means of van der waals force, the LED chip is used as a luminescence conversion layer of the LED chip for realizing color conversion.
In the present embodiment, in consideration of the temperature resistance of the luminescence conversion particles (e.g., quantum dot material), the solder with a higher bismuth-containing component can be used for the soldering, but not limited thereto, and the corresponding second preset temperature can be set to 90 ℃ to 100 ℃. For example, the temperature may be set to 90 ℃, 92 ℃, 95 ℃, 100 ℃ or the like.
For the convenience of understanding, the present embodiment will be described below with reference to the accompanying drawings, which illustrate an application example of the transfer process of the flip LED chip.
In the present example, as shown in fig. 10-1 to 10-2, the LED chip 7 is grown on the growth substrate 10. The area shown by the black box 101 in fig. 10-2 is the area covered (i.e., selected) by the temporary substrate. Referring to fig. 10-3 to 10-5, in the present embodiment, the temporary substrate 6 is provided with the adhesion layer 11, wherein the arrangement form of the adhesion layer 11 can be flexibly set as long as it can reliably adhere the corresponding LED chip when the surface of the growth substrate on which the plurality of micro LED chips are grown is attached. Referring to fig. 10-3, the adhesion layer 11 on the temporary substrate 6 is attached to the LED chip 7 to be transferred to realize the adhesion of the LED chip, and the LED chip 7 is peeled off from the growth substrate 10 and transferred onto the temporary substrate 11, referring to fig. 10-4 and fig. 10-5, wherein fig. 10-5 is a top view of the temporary substrate 11. In this process, but not limited to LLO (Laser Lift Off) can also be used to ensure that the LED chip is smoothly peeled Off from the growth substrate.
It should be understood that the material of the growth substrate in this embodiment is a semiconductor material that can grow the epitaxial layer of the micro LED chip on the growth substrate, for example, the material of the growth substrate may be, but is not limited to, sapphire, silicon carbide, silicon, gallium arsenide, and may also be other semiconductor materials, and is not limited herein.
The material of the temporary substrate is not limited in this embodiment, for example, the material of the temporary substrate may be any one of, but not limited to, glass, sapphire, quartz and silicon.
In this application example, the LED chip is a blue LED chip, and the luminescence conversion particle is a red quantum dot particle or a green quantum dot particle. For example, assuming that a part of blue LED chips needs to be converted into red light on the display backplane, the conversion process can be seen in fig. 11, which includes:
s1101: and infiltrating the colloid bulges 3 of the chip transfer assembly with red quantum dot particles to obtain the colloid bulges 3 in which the red quantum dot particles are distributed in the second pores 3.
S1102: after the colloid bumps 3 of the chip transfer assembly are heated to a first preset temperature, they are attached to corresponding LED chips (blue LED chips in this example) 7 on the temporary substrate 6.
S1103: then, the colloid projection 3 is cooled, so that the colloid projection 3 can complete the adsorption of the LED chip 7, and the LED chip 7 can be picked up.
S1104: the LED chip 7 picked up by the colloid bump 3 is transferred to a corresponding chip pad on the display backplane 8, and the pad of the chip pad is provided with solder 9.
S1105: the welding of the LED chip is realized by heating to a second preset temperature to melt the solder 9, and meanwhile, the contact surface between the colloid projection and the porous adhesive layer forms a separation surface under the action of a thermal effect, so that the colloid projection is separated from the porous adhesive layer and is kept on the light-emitting surface of the LED chip. In one example, after cooling, since the LED chip is already soldered on the pad of the bonding pad, the substrate may be transferred by pulling upward, and since the separation surface has been formed between the colloid protrusion and the porous adhesive layer, the adhesive force between the colloid protrusion and the porous adhesive layer is smaller than the adhesive force between the LED chip and the colloid protrusion, so that the colloid protrusion is separated from the porous adhesive layer and remains on the light emitting surface of the LED chip.
S1106: and finally obtaining the LED emitting red light on the display back plate.
In some application examples, when the blue LED chip does not need to perform the light extraction conversion process, an exemplary transition process is shown in fig. 12, which includes:
s1201: after the colloid projection 3 (without the luminescence conversion particles in the second pore inside the colloid projection) of the chip transfer assembly is directly heated to the first preset temperature, the colloid projection is attached to the corresponding LED chip (in this example, blue LED chip) 7 on the temporary substrate 6.
S1202: then, the colloid projection 3 is cooled, so that the colloid projection 3 can complete the adsorption of the LED chip 7, and the LED chip 7 can be picked up.
S1203: the LED chip 7 picked up by the colloid bump 3 is transferred to a corresponding chip pad on the display backplane 8, and the pad of the chip pad is provided with solder 9.
S1204: the welding of the LED chip is realized by heating to a second preset temperature to melt the solder 9, and meanwhile, the contact surface between the colloid projection and the porous adhesive layer forms a separation surface under the action of a thermal effect, so that the colloid projection is separated from the porous adhesive layer and is retained on the light-emitting surface of the LED chip.
S1205: and finally obtaining the LED emitting blue light on the display back plate.
Of course, when the blue LED chip does not need to be subjected to the light extraction conversion process, the blue LED chip may be transferred in various manners, and is not limited to the transfer manner shown in fig. 12.
After the LED chip is transferred to the blue light chip for three times in the transfer mode, different colors can be displayed, the complicated process of independently preparing the QD film in the later period is avoided, and the process of preparing the color display panel is simplified.
The embodiment also provides a display panel, which is characterized by comprising a display back panel and a plurality of LED chips, wherein the display back panel is provided with a plurality of chip welding areas, and the plurality of LED chips are respectively transferred to the chip welding areas by the chip transfer method to complete bonding. The complicated process of independently preparing the luminescence conversion layer in the later period is avoided, and the process of preparing the display panel is simplified, so that the preparation efficiency of the display panel can be improved, and the cost of the display panel can be reduced.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (10)
1. A chip transfer assembly, comprising:
transferring the substrate;
the transfer substrate comprises a porous adhesive layer formed on the transfer substrate, wherein first pores are distributed in the porous adhesive layer;
colloid bulges are formed on the porous adhesive layer, the colloid bulges have light transmission, second pores are distributed in the colloid bulges, and the sizes of the second pores are matched with the sizes of the luminescence conversion particles and are smaller than the sizes of the first pores;
the second hole is used for accommodating the light-emitting conversion particles in the light-emitting diode chip transfer process, and the colloid bulge is used for completing the adsorption of the light-emitting diode chip under the action of temperature reduction after being heated after being attached to the light-emitting surface of the light-emitting diode chip to be transferred in the light-emitting diode chip transfer process; and the separation surface is formed on the contact surface between the porous adhesive layer and the chip bonding area under the action of thermal effect in the process of heating and completing the welding of the light-emitting diode chip after the absorbed light-emitting diode chip is transferred to the chip bonding area, so that the light-emitting diode chip is separated from the porous adhesive layer and is kept on the light-emitting surface of the light-emitting diode chip.
2. The chip transfer assembly of claim 1, wherein the first aperture has a size of 50 nm to 1000 nm and the second aperture has a size of 6 nm to 30 nm.
3. The chip transfer assembly of claim 1, wherein the area of the contact surface between the adhesive bumps and the porous adhesive layer is smaller than the area of the contact surface between the adhesive bumps and the LED chips.
4. The chip transfer assembly according to any one of claims 1-3, wherein the porous adhesive layer is a polydimethylsiloxane system adhesive layer, and the colloidal protrusions are silicone system colloids or acrylic resin.
5. A method of manufacturing a chip transfer assembly according to any one of claims 1 to 4, comprising:
providing a transfer substrate;
forming a porous adhesive layer on the transfer substrate, wherein first pores are distributed in the porous adhesive layer;
form the colloid arch on the porous glue film, the colloid arch has the light transmissivity, just it has the second pore to distribute in the colloid arch, the size in second pore and the size phase-match of luminous conversion granule, and be less than the size in first pore.
6. The method of making a chip transfer assembly according to claim 5, wherein said porous adhesive layer is a polydimethylsiloxane system adhesive layer;
the forming of the porous adhesive layer on the transfer substrate includes:
diluting the polydimethylsiloxane system colloid;
adding first soluble particles into the diluted polydimethylsiloxane system colloid and uniformly stirring;
arranging the polydimethylsiloxane system colloid mixed with the first soluble particles on the transfer substrate, and curing to form a polydimethylsiloxane system adhesive layer;
and removing the first soluble particles in the solidified polydimethylsiloxane system adhesive layer through water bath, wherein the space occupied by the first soluble particles forms the first pore.
7. The method of claim 6, wherein the forming the adhesive bumps on the porous adhesive layer comprises:
diluting a target colloid, wherein the target colloid is an organic silicon system colloid or acrylic resin;
adding second soluble particles into the diluted target colloid and uniformly stirring;
setting the target colloid mixed with the second soluble particles on a temporary transfer substrate, and curing to form colloid bulges;
removing second soluble particles in the solidified colloid protrusions through water bath, wherein the second pores are formed by spaces occupied by the second soluble particles;
and adhering the colloid bulges on the temporary transfer substrate to the porous adhesive layer on the transfer substrate, and separating the temporary transfer substrate from the colloid bulges.
8. The method of making a chip transfer assembly according to claim 7, wherein the diameter of the first dissolvable particle is larger than the diameter of the second dissolvable particle;
the first and second soluble particles comprise: at least one of a saccharide particle and a salt particle.
9. A method of chip transfer, comprising:
infiltrating the colloidal protrusions of the chip transfer assembly of any one of claims 1-4 with luminescence conversion particles such that the luminescence conversion particles enter the second apertures;
attaching the colloid bumps to the light-emitting surface of the LED chip to be transferred, heating the colloid bumps to a first preset temperature, and cooling to enable the colloid bumps to complete adsorption of the LED chip and complete pickup of the LED chip;
and transferring the LED chip picked up by the colloid projection to a chip welding area preset with solder, and melting the solder to realize the welding of the LED chip by heating to a second preset temperature.
10. The chip transfer method according to claim 9, wherein the first predetermined temperature is 60 ℃ to 80 ℃ and the second predetermined temperature is 90 ℃ to 100 ℃.
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| CN114023777B (en) * | 2021-07-22 | 2022-12-16 | 重庆康佳光电技术研究院有限公司 | Circuit board assembly, light-emitting assembly and manufacturing method thereof |
| CN114335260A (en) * | 2021-12-27 | 2022-04-12 | 深圳市思坦科技有限公司 | LED chip transfer method, transfer substrate preparation method and display device |
| WO2023220917A1 (en) * | 2022-05-17 | 2023-11-23 | 厦门市芯颖显示科技有限公司 | Micro light-emitting device, method for manufacturing same, and display panel |
| TWI796230B (en) * | 2022-05-31 | 2023-03-11 | 友達光電股份有限公司 | Light emitting device substrate and method of fabricating the same |
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