JPH1092880A - Particle arranger and particle transfer method using this - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent the omission in transfer in the case of performing the bump formation in TAB(tape automatic bonding) or flip chip bonding, by transfer method. SOLUTION: A stage 1 consisting of porous material is arranged close to a mask plate 7 fixed horizontally, and the bumps Bp housed one by one in the openings 7a of the mask board 7 are arranged on the particle arrangement face on the stage 1. At this time, exhaust performed from the rear of the stage 1 and the minute projection 2a made at the particle arrangement face limit the shifting of the bumps Bp. After collecting superfluous bumps, using a squeeze 9, the stage 1 is lowered and separated from the mask board 7. When the stage 1 is lowered by inclining the stage 1, the dislocation of the bump Bp due to air flow turbulence is prevented. Subsequently, the stage 1 is shifted to other place, and the arranged bumps Bp are transferred onto the leads on a TAB tape or the pad electrodes of the LSI chip.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a particle arranging apparatus capable of accurately and efficiently transferring solder bumps to an electrode pad of a semiconductor chip or an end of a lead of a TAB (tape automatic bonding) tape, and a particle arranging apparatus. And a particle transfer method using

[0002]

2. Description of the Related Art As an electrical connection method between an electrode pad of a semiconductor chip and an external lead, wire bonding, T
AB and flip chip bonding are typical. Among them, the TAB method and the flip chip bonding method require solder bumps (hereinafter, referred to as bumps) as a medium for electrical connection. That is, in the TAB method, the electrode pads of the semiconductor chip and the TAB
A bump is interposed between a film-shaped lead formed on a tape and a bump is interposed between an electrode pad of a semiconductor chip and a lead formed on a mounting substrate in the flip-chip bonding method.

As a method of forming the solder bump, an exposed portion of an electrode pad of a semiconductor chip is once covered with a barrier metal, a pattern of a solder film is formed so as to cover the barrier metal, and reflow annealing is performed. Conventionally, a method of self-aligning shrinkage on a barrier metal using its own surface tension, or a method of forming bumps one by one on an electrode pad using a wire bonder has been widely used.

[0004] In recent years, a transfer bump method has been proposed instead of a direct forming method that requires man-hours and cost as described above. In this method, bumps are formed on a dedicated transfer substrate by electrolytic plating. In the TAB method, the bumps are aligned with the leads of the TAB tape. In the flip chip bonding method, the bumps are aligned with the electrode pads of the semiconductor chip. In this method, the bumps are transferred onto the leads or electrode pads by performing thermocompression bonding in the aligned state. In particular, it is no exaggeration to say that the TAB method has been generalized by the proposal of the transfer bump method.

[0005] However, the bumps formed by the electrolytic plating method have a problem in that transfer unevenness occurs if the heights of the individual bumps are not exactly uniform because the surfaces thereof are flat. As a technique for solving this problem, Japanese Patent Publication No. 7-27929 discloses an arrangement apparatus for fine metal spheres on the premise that spherical bumps are arranged on a transfer substrate. However, in the electrolytic plating method, a position where a bump is to be formed can be specified in advance, whereas a spherical bump is manufactured in a state of being separated. Therefore, how efficiently the spherical bumps are arranged at predetermined positions determines the success or failure of the above method.

Therefore, in the above apparatus, as shown in FIG. 20, a through hole 53 is provided in the transfer substrate 50, and the opening diameter of the through hole 53 is smaller than the spherical diameter of the bump bp on the back side.
By making the upper surface slightly larger, the transfer substrate 50 itself has the function of a positioning jig, and the lower surface of the transfer substrate 50 is evacuated to reduce the bump b.
p is sucked and fixed in the through hole 53. The decompression operation at this time is performed by exhausting a back space 57 formed between the transfer substrate 50 and the holder 56 holding the transfer substrate 50 through an exhaust pipe 58.

The through-hole 53 is a flat plate 5 having an opening 54 having a diameter d ₁ smaller than the particle diameter of the bump.
1 and an opening 5 having a diameter d ₂ larger than the bump particle size
5 is formed by laminating the flat plate 52 on which 5 is formed. The depth of the through hole 53 is set so that when the bump bp is captured, the bump bp is projected at a height within 1/2 of the particle size.
The thicknesses t ₁ , t _{2 of} 1,52 have been optimized. The bumps bp arranged in this manner are transferred onto, for example, leads on a TAB tape, and the TAB tape is pressed against the semiconductor chip, thereby completing the mounting of the semiconductor chip.

[0008]

By the way, the number of bumps is one.
Only one electrode pad or one lead is formed for each lead. Therefore, if the transfer of bumps occurs even in tens to hundreds of dozens of electrodes or leads, the semiconductor chip becomes defective. In the above-described apparatus, the transfer is performed while the bumps bp are captured in the through holes 53. Therefore, in order to secure the protrusion amount of the bumps bp necessary for the transfer, the particle size of the bumps bp is controlled strictly. A need arises. However, if the pitch between adjacent electrode pads or leads between adjacent electrode pads becomes narrower, the bump bp becomes finer accordingly, so that uniform control of the particle size itself becomes more and more difficult. In addition, the required flatness of the TAB tape leads, the flatness of the bonding tool, and the parallelism between the transfer substrate and the TAB tape have been increased, and these adjustments will be made in the future as high-density mounting progresses. It is expected that it will be extremely difficult.

Accordingly, the present invention provides a particle arrangement apparatus capable of transferring bumps, generally particles, more easily and reliably without performing such difficult control or significantly increasing the precision of the apparatus. It is an object of the present invention to provide a particle transfer method using the method.

[0010]

According to the present invention, there is provided a particle arrangement device having a particle supply means and a surface having irregularities on one main surface of a porous flat plate, which is a particle arrangement surface, for restricting movement of particles. A stage, a mask plate having an opening formed according to a predetermined pattern to define the arrangement of particles on this stage, and from the other main surface side of the stage to hold particles on the particle arrangement surface. By adopting a configuration including a suction means for sucking particles and a driving means connected to at least one of the stage and the mask plate so that the main surfaces of the stage and the mask plate can be freely approached / separated from each other. The above-mentioned object is to be achieved.

To transfer particles using such an apparatus,
First, particles are supplied from above the mask plate while holding the stage and the mask plate close to each other and parallel or substantially parallel to each other so that the particles are caught in the openings of the mask plate. Are removed, the mask plate and the stage are separated, and the particles arranged on the stage are transferred to another plane.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The basic concept of the present invention is that the placement of particles and the definition of particle arrangement are performed by independent members, respectively. By separating, the particles can be transferred in a state where the whole particles are exposed. Therefore, when the above particles are used as bumps, according to the present invention, the bump height, the flatness of the TAB tape leads, and the flatness of the bonding tool need not be so precisely adjusted as in the prior art. In addition, bumps can be transferred with high throughput.

As a particle arrangement apparatus embodying this concept, in addition to a stage on which particles are placed, a mask plate for defining the particle arrangement, and a drive connected to at least one of the stage and the mask plate Means are needed. The simplest configuration and control is when the driving means is connected only to the stage and the stage is moved up and down with respect to the fixed mask plate. Further, the fixation of the particles on the stage can be achieved to some extent by forming the stage from a porous flat plate and performing suction from the back side thereof. Is provided, the displacement of the particles when the stage and the mask plate are separated from each other is prevented.

Here, the above-mentioned surface irregularities can be provided by forming fine projections on the particle arrangement surface or by placing a mesh having a mesh smaller than the particle diameter of the particles. The minute projections may be formed in a random pattern or may be formed according to a regular pattern. As a simple method for random formation, a solution of a thermosetting resin or an ultraviolet curable resin is sprayed on a particle array surface, and the obtained fine droplets are cured by heating or ultraviolet irradiation. . On the other hand, the most convenient method for forming a pattern is patterning a photoresist material. According to the resist patterning method, the magnitude relationship between the arrangement pitch of the fine protrusions and the particle arrangement pitch can be set freely. If the arrangement pitch of the microprojections is larger than the arrangement pitch of the particles, the particles are trapped between adjacent microprojections, and if smaller, one particle is supported by the plurality of microprojections.

At least a part of the fine projections and the mesh may have adhesion to particles. As a method of this application, first, the minute projection itself is formed of an adhesive substance, or an adhesive substance is applied to a mesh. Such sticky substances include:
Silicon resin or acrylic resin can be used.
In addition, unnecessary adhesion of the mask plate can be prevented by selectively applying this adhesiveness in a region corresponding to the vicinity of the opening of the mask plate in the mesh and not applying the adhesive around the stage. be able to.

In the particle arrangement device of the present invention, the driving means may be provided with an inclination mechanism for inclining the main surfaces of the stage and the mask plate by a small angle from a positional relationship parallel to each other. This mechanism is extremely effective in suppressing abrupt inflow of air when separating the stage and the mask plate after the arrangement of the particles is completed, and preventing disorder and scattering of the arrangement of the particles. In addition, the opening of the mask plate has a size capable of capturing one particle, and the particles
When it comes to handle conductive particles for bump formation,
An extremely practical bump arrangement apparatus is provided.

When transferring particles to another plane using the apparatus of the present invention having the above-described tilting mechanism, two types of particle arrangement methods are possible depending on the operation timing of the tilting mechanism. The first is a method of slightly reducing the parallelism between the stage and the mask plate during the arrangement of the particles. Second,
Arrangement of particles is performed with both the stage and the mask plate kept parallel, and at the initial stage when separating them, the parallelism is reduced slightly, and when the danger of sudden air inflow is reduced, both are aligned. This is a method of returning to a parallel positional relationship again. In any case, when the driving means is provided on the stage side, the mask plate is kept horizontal and the stage side is inclined.

The other plane on which the particles arranged by the particle arrangement method of the present invention are transferred is a TAB tape having leads formed thereon, a semiconductor chip having pad electrodes exposed, or a TAB tape or semiconductor chip having these pads exposed. This is an intermediate transfer member that mediates the transfer of the bump to the middle. Hereinafter, preferred embodiments of the present invention will be described.

First Embodiment Here, a description will be given of a particle arrangement apparatus in which fine projections obtained by curing spray droplets of an ultraviolet (UV) curable resin are formed on a particle arrangement surface of a stage with reference to FIG. FIG.
FIG. 1 is a schematic cross-sectional view of a particle arrangement device of the present invention including a fixed mask plate and a movable stage. This device includes a guide rail 1 for defining a moving direction of the stage 1.
One end (right side) is a bump arrangement portion and the other end (left side) is a bump transfer portion, and the stage 1 is reciprocated in the direction of arrow C between the two by driving means (not shown). The arrangement of the bumps Bp to the transfer head 16 and the transfer of the bumps to the transfer head 16 are performed alternately.

The bump arrangement portion is surrounded by a frame 12 having one end opened as a gate 12a for loading and unloading the stage, and a ceiling supported by a mask holder 8 is provided on the ceiling side of the frame 12. The plate 7, a bump supply tube 13 for supplying the bumps Bp from above the mask plate 7, a squeegee 9 for scraping excess bumps Bp not arranged on the mask plate 7, and the operation of the squeegee 9 by arrows. A
A guide rail 11 for defining the direction and a driving means (not shown) for driving the squeegee 9 are incorporated. The mask plate 7 is made of a nickel plate having a thickness of about 40 μm, and has an opening 7a large enough to receive exactly one bump Bp. Here, the average particle diameter of the bump Bp is set to about 40 μm, and the opening diameter of the opening 7a is set to about 50 μm.
m. Here, the mask plate 7 is fixed horizontally. In addition, the gap between the squeegee 9 and the mask plate 7 is 以下 or less of the particle size of the bump Bp, that is, 20 μm in this case, so that the surplus bump can be raked out without leakage.
m or less.

On the other hand, a transfer head 16 is provided in the bump transfer section. The transfer head 16 includes the exposure optical system 1
5 is provided, and a quartz window 14 having a surface coated with an adhesive paint is provided on the surface facing the stage. Exposure optical system 15
Is provided for fixing the bumps Bp on the electrode pads of the LSI chip via a UV-curable adhesive as described later, and is used to supply light energy for an adhesive curing reaction. It is composed of a light source and an optical fiber for uniformly guiding exposure light from the light source to the quartz window 14. The transfer head 16 is moved up and down in the direction of arrow D, so that the bumps B arranged on the stage 1 are moved.
The p is adsorbed on the quartz window 14 and moved to another place to transfer the bump Bp onto an LSI chip (not shown).

The stage 1 is made of a porous material typified by ceramics, and has a surface on which countless minute projections 2a having a height of about 10 μm are formed. The fine protrusions 2a regulate the movement of the bumps Bp on the particle arrangement surface of the stage 1 and also serve to prevent the close contact between the particle arrangement surface and the mask plate 7. The height of the minute projections 2a is set so that two or more bumps Bp are not accumulated in the same place. Various methods are conceivable as a method for forming the microprojections 2a. Here, a solution in which a UV-curable resin is dissolved in an appropriate solvent is sprayed on the stage 1 using a sprayer, and droplets of the formed solution are irradiated by UV irradiation. It was formed by curing.

The stage 1 is supported by a stage holder 3 at a peripheral portion thereof. The back space formed between the back of the stage 1 and the stage holder 3 is a decompression chamber 4 that is evacuated by the exhaust unit 6. According to such an apparatus configuration, the movement of the bumps Bp captured one by one in the openings 7a of the mask plate 7 is restricted on or between the minute projections 2a, and the movement of the bumps Bp is also caused by the suction force acting from the back of the stage. Will be limited. The stage holder 3 is fixed on the elevating pedestal 5 engaged with the guide rail 10 described above. That is, the stage 1 is moved by moving the elevating pedestal 5 along the arrow C direction.

Further, the elevating pedestal 5 is extendable and contractible in the direction of arrow B, so that the distance between the stage 1 and the mask plate 7 when carried into the particle array portion can be adjusted. However, the amount of expansion and contraction in the direction of the arrow B is the stage 1
It need not be uniform over the entire surface. For example, by using an actuator to increase and decrease the amount of expansion and contraction at one end of the stage 1 and to reduce the amount of expansion and contraction at the other end, the particle arrangement surface of the stage 1 can be used when arranging particles or when separating from the mask plate 7 after arranging particles. Can be slightly inclined from the horizontal plane. That is, the tilt operation is in the direction of arrow E.

When the particle arrangement apparatus of the present invention having such a configuration is used, the transfer of the bumps Bp is performed while being separated from the mask plate 7, so that the height of the bumps from the surface of the transfer substrate as in the prior art is reduced. It is possible to transfer the bumps to other planes without leakage without performing advanced control of the bump particle size.

Second Embodiment Here, bumps Bp are actually formed on the pad electrodes of an LSI chip by using the above-described particle arrangement device in the first embodiment.
Was transcribed. This process will be described with reference to FIGS. FIG. 2 shows a state in which the bumps Bp are accommodated one by one in the openings 7a while keeping the mask plate 7 and the stage 1 close to each other and horizontally. The bumps Bp used here were made of Ni and Au on the surface of the resin beads.
Is subjected to multi-layer plating. Excessive bumps Bp not accommodated in the openings 7a are raked and collected by the squeegee 9 reciprocating in the direction of arrow A.

Next, the stage 1 is separated from the mask plate 7 by operating the elevating pedestal 5 as shown in FIG. If a tilting operation is performed along the direction of arrow E in the figure at the beginning of the separation, rapid inflow of air between the mask plate 7 and the stage 1 can be prevented, and the correct arrangement of the bumps Bp can be maintained. . Thereafter, the stage 1 is lowered along the direction of the arrow B to a height at which the stage 1 can be carried out of the particle array portion, but the posture of the stage 1 may be returned to a horizontal position when the influence of the turbulence of the air flow becomes negligible.

FIG. 4 shows a state where the separation of the mask plate 7 is completed and the bumps Bp are arranged on the stage 1. Here, since the arrangement of the microprojections 2a on the particle arrangement surface of the stage 1 is irregular, some of the bumps Bp are caught between adjacent microprojections 2a, and some of the bumps Bp are adjacent to the plurality of adjacent microprojections. 2a. Therefore, the height of each bump Bp from the stage surface slightly varies, but the difference is within 10 μm. Thereafter, the stage 1 is carried out to the particle transfer section by moving the elevating pedestal 5 along the arrow C direction.

Next, as shown in FIG. 5, the transfer head 16 was lowered in the direction of arrow D, and the bumps Bp were adsorbed on the surface of the quartz window 14 on which the adhesive material was applied in advance.
In the present invention, each bump Bp is present on the stage 1 in an exposed state, and the coating film of the adhesive material absorbs the difference in height of each bump Bp and sufficiently contacts any bump Bp. As a result, the bump Bp moved to the transfer head 16 without leakage.

Next, the transfer head 16 is connected to the LSI chip 20
To the electrode pad 21 of the LSI chip 20.
After the alignment of the transfer head with each bump Bp, the transfer head was lowered along the arrow F direction as shown in FIG. At this time, the surface of the electrode pad 21
The cured adhesive layer 22 is applied and formed, and the bump Bp is brought into contact with this layer. In this state, UV light hν was irradiated from the exposure optical system 15. This UV light transmitted through the quartz window 14 to cure the UV curing adhesive layer 22, thereby fixing the bump Bp on the electrode pad 21. After this, FIG.
Then, the transfer head 16 was raised to complete the transfer of the bump onto the LSI chip as shown in FIG.

Third Embodiment In this embodiment , the stage 1 is slightly inclined from the horizontal plane at the time of bump arrangement to prevent the bump arrangement from being disturbed due to the air flow at the time of mask separation. That is, the bumps Bp were arranged in a state where the stage 1 was inclined by an angle θ from the horizontal plane as shown in FIG.
The inclination angle at this time can be set within a range in which the bump Bp does not deviate from the opening 7a of the mask plate 7. Separation of the stage 1 and the mask plate 7 after the bump arrangement can be performed according to the method described in the second embodiment.

Fourth Embodiment Here, referring to FIG. 9 and FIG. 10, a particle arrangement apparatus in which minute projections on the stage 1 are regularly formed through photolithography instead of random as described above. I will explain it. Small protrusion 2b in the present embodiment
Is performed on the photoresist film applied and formed on the stage 1 through selective exposure and development processing, and is composed of a resist pattern formed by this. Here, the arrangement pitch P _2b of the minute projections 2b is equal to the arrangement pitch P _{B of the} bumps Bp.
If it is sufficiently smaller than that, as shown in FIG. 9, the bump Bp does not come into contact with the particle arrangement surface of the stage 1 but is supported on the minute projections 2b. On the other hand, the minute protrusion 2
When the arrangement pitch P _{2b of the b} is sufficiently larger than the arrangement pitch P _B of the bumps Bp, as shown in FIG. 10, the bumps Bp are in contact with the particle arrangement surface of the stage 1 between the adjacent micro projections 2b. Is held.

Fifth Embodiment Here, a description will be given of a particle arraying apparatus in which minute projections on the stage 1 are provided with adhesiveness, and a method of forming the minute projections. In the present embodiment, as shown in FIG.
What constitutes the minute projections is the adhesive resin embedded layer 18a. This adhesive resin embedded layer 18a can be formed using, for example, a silicone resin. Hereinafter, this forming method will be described with reference to FIGS.

First, as shown in FIG. 11, a normal resist patterning was performed on the stage 1 to form a resist pattern 17a. Next, as shown in FIG. 12, an adhesive resin embedding layer 18a was formed so as to fill the inter-pattern space of the resist pattern 17a with silicon resin, and was cured. Thereafter, the resist pattern 17a is removed using a stripper, and only the adhesive resin embedded layer 18a is placed on the stage 1 as shown in FIG.
Left above.

The microprojections formed in this manner have adhesiveness themselves and are excellent in holding force of the bumps Bp, unlike the microprojections formed using a UV-curable resin as described above. . Therefore, even if turbulence in the air flow occurs when the stage 1 and the mask plate 7 are separated, turbulence in the bump arrangement can be minimized. Further, in order to prevent the turbulence of the air flow, it is possible to set a large inclination angle of the stage 1 at the time of separation.

Sixth Embodiment In this embodiment, there is provided a particle arranging apparatus in which adhesive microprojections are formed not in the entire surface of the particle array surface but in a region corresponding to the vicinity of the opening 7a of the mask plate 7, The method for forming the film will be described. In this embodiment, as shown in FIG.
8a and a resist pattern 17c. The former is selectively formed in the corresponding region M near the opening of the mask plate, and its constituent material is, for example, a silicon resin. On the other hand, the latter is formed around the above-mentioned region M, and its constituent material is a general positive type photoresist material. By limiting the formation range of the adhesive microprojections, contamination of the mask plate 7 when the stage 1 is in contact with the mask plate 7 can be avoided.

Hereinafter, a method of forming these minute projections through two photolithography steps will be described with reference to FIGS. First, as shown in FIG. 14, the first selective exposure was performed on the positive photoresist film 20 applied and formed on the stage 1 via the photomask 30. This photomask 30 is formed by forming a light-shielding film pattern 32 made of, for example, a Cr film on a photomask 31 substrate that is transparent to exposure light. This defines the formation position of the resin embedded layer (reference numeral 18b in FIG. 16). In FIG. 14, the type of exposure is expressed as proximity exposure, but this may be contact exposure or projection exposure.

Next, a first development process was performed to dissolve and remove the exposed area of the positive type photoresist film 20, thereby forming a resist pattern 17b as shown in FIG.
Subsequently, as shown in FIG. 16, an adhesive resin buried layer 18a was formed so as to fill the inter-pattern space of the resist pattern 17b with a silicon resin, and was cured.

Next, as shown in FIG. 17, the resist pattern 17b formed on the stage 1 was subjected to a second selective exposure through a photomask 40. The photomask 40 is formed by forming a light-shielding film pattern 42 made of, for example, a Cr film on a photomask 41 substrate that is transparent to exposure light. A new resist pattern (reference numeral 17c in FIG. 18) is formed in the portion, and an exposure region is defined so as to decompose and remove the resist pattern 17b already formed in the corresponding region M near the opening of the mask plate. It is. After performing such selective exposure, development processing was performed, and as shown in FIG. 18 described above, the stage 1 in which the formation regions of the two types of minute projections were respectively limited was able to be manufactured.

Seventh Embodiment In this embodiment, instead of the minute projections described above,
A particle arrangement device that holds the bumps Bp with the mesh placed on the stage 1 will be described with reference to FIG. FIG. 19 shows a state in which the mesh 22 is placed on the stage 1 and the bumps Bp captured by the openings 7a of the mask plate 7 are arranged thereon. Here, the mesh 22 is made of, for example, stainless steel, and the size of the mesh is selected to be sufficiently smaller than the particle size of the bump Bp and to be able to reliably hold the mesh. Here, the opening diameter of the mesh was about 20 μm.

The arrangement of the bumps Bp on the stage 1 and the transfer thereof can be performed in the same manner as described above. In FIG. 19, the stage 1 and the mask plate 7 at the time of bump arrangement are both held horizontally. However, as in the third embodiment, the stage 1 is slightly moved from a horizontal plane by the operation of the lifting pedestal 5. It may be tilted. further,
When the stage 1 and the mask plate 7 are separated from each other, it is effective to lower the stage 1 while tilting the stage 1 as described above in the first embodiment.

As described above, the seven embodiments of the present invention have been described, but the present invention is not limited to these embodiments. For example, after the bumps arranged on the stage 1 are carried out to the particle transfer section, the bumps are directly heat-pressed to the TAB tape leads using a normal bonding tool without using the above-described transfer head. May be. In addition, the types and particle diameters of the bumps, the opening diameters of the mask plate and the mesh, the dimensions of the minute projections, and the detailed configuration of the particle arrangement device can be appropriately changed or selected. Further, the present invention can be widely applied to arrangement and transfer of fine particles other than bumps.

[0043]

As is clear from the above description, according to the particle arrangement apparatus of the present invention and the particle arrangement method using the same, the particle diameter of the bump, the flatness of the lead of the TAB tape,
Flatness of bonding tool, TAB tape and LSI
The bump spheres can be simply and reliably arranged and transferred without very strictly controlling the parallelism of the transfer substrate (stage) with respect to the chip. Thereby, the yield of bonding by the TAB method and the flip chip bonding method can be improved, and the productivity of the semiconductor device can be improved.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view showing one configuration example of a particle arrangement device of the present invention.

FIG. 2 is a schematic cross-sectional view showing a state in which bumps are arranged while keeping a stage having fine projections and a mask plate horizontal in an example of the particle transfer method of the present invention.

FIG. 3 is a schematic cross-sectional view showing a state where a stage is separated from a mask plate while being inclined.

FIG. 4 is a schematic sectional view showing a state where bumps are arranged on a stage.

FIG. 5 is a schematic cross-sectional view showing a state where the bumps of FIG. 4 are being transferred to a transfer head.

FIG. 6 is a schematic cross-sectional view showing a step of transferring the bump of FIG. 5 onto a pad electrode of an LSI chip to which a UV curing adhesive has been applied in advance.

FIG. 7 is a schematic cross-sectional view showing a state where the bumps of FIG. 6 have been transferred onto an LSI chip.

FIG. 8 is a schematic cross-sectional view showing a state in which particles are arranged while slightly tilting a stage having fine projections with respect to a horizontal mask plate in another example of the particle transfer method of the present invention.

FIG. 9 is a schematic cross-sectional view showing an arrangement state of bumps on a stage when an arrangement pitch of minute projections is smaller than an arrangement pitch of bumps.

FIG. 10 is a schematic cross-sectional view showing an arrangement state of bumps on a stage when an arrangement pitch of minute projections is equal to or greater than an arrangement pitch of bumps.

FIG. 11 is a schematic cross-sectional view showing a state in which resist patterning has been performed on a stage in a process of forming a microprojection having adhesiveness.

12 is a schematic cross-sectional view showing a state in which an adhesive resin buried layer is formed in a space between patterns of the resist pattern of FIG. 11;

FIG. 13 is a schematic cross-sectional view showing a state in which the resist pattern of FIG. 12 is peeled off to leave an adhesive resin buried layer, which is made into a fine projection.

FIG. 14 is a schematic cross-sectional view showing a state in which a first selective exposure is performed on a positive photoresist film on a stage in a process of forming minute projections having adhesiveness only in a region corresponding to the vicinity of an opening of a mask plate; It is.

FIG. 15 is a schematic cross-sectional view showing a state where a resist pattern is formed by performing first development.

16 is a schematic cross-sectional view showing a state in which an adhesive resin buried layer is formed in a space between patterns of the resist pattern of FIG.

FIG. 17 is a view showing a structure of the positive photoresist film of FIG.
FIG. 9 is a schematic cross-sectional view showing a state where the first selective exposure is being performed.

FIG. 18 is a schematic cross-sectional view showing a state in which a second development is performed to form a resist pattern outside a region corresponding to the vicinity of the opening of the mask plate.

FIG. 19 is a schematic cross-sectional view showing a state in which particles are arranged while keeping a stage on which a mesh is placed and a mask plate horizontal in an example of still another particle transfer method of the present invention.

FIG. 20 is a schematic cross-sectional view showing one configuration example of a conventional arrangement device for fine metal spheres.

[Explanation of symbols]

 Reference Signs List 1 Stage 2a, 2b Micro projection 3 Stage holder 4 Decompression chamber 5 Elevating pedestal 6 Exhaust unit 7 Mask plate 7a Opening 8 Mask holder 9 Squeegee 13 Particle supply port 16 Transfer head 17c Resist pattern 18a, 18b Adhesive resin embedded layer Reference Signs List 20 LSI chip 21 Pad electrode 30, 40 Photomask Bp Bump

Claims (15)

[Claims] 1. A fine particle for restricting the movement of particles on one main surface comprising a particle supply means and a porous flat plate and serving as a particle arrangement surface for arranging particles supplied from the supply means. A stage having an irregular surface, a mask plate having an opening formed according to a predetermined pattern to define the arrangement of particles on the stage, and a stage for holding particles on the particle arrangement surface. Suction means for sucking particles from the other main surface side; and driving means connected to at least one of the stage and the mask plate so that the main surfaces of the stage and the mask plate can be freely moved toward and away from each other. The particle arrangement device provided with. 2. The particle arrangement device according to claim 1, wherein the surface irregularities are provided by minute projections arranged on the particle arrangement surface. 3. The particle arrangement device according to claim 2, wherein said fine projections are arranged at a pitch smaller than an arrangement pitch of the particles. 4. The particle arrangement device according to claim 2, wherein the fine projections are arranged at a pitch equal to or greater than an arrangement pitch of the particles. 5. The particle arrangement device according to claim 2, wherein at least a part of the fine projections is provided with tackiness to particles. 6. The particle arrangement device according to claim 5, wherein said adhesiveness is provided in a region corresponding to a vicinity of an opening of said mask plate in said particle arrangement surface. 7. The particle arrangement device according to claim 1, wherein the surface irregularities are provided by a mesh which is superimposed on the particle arrangement surface and has a mesh smaller than the particle diameter of the particles. 8. The particle arrangement device according to claim 7, wherein at least a part of the mesh is provided with tackiness to particles. 9. The particle arrangement device according to claim 8, wherein the adhesiveness is provided in a region of the mesh corresponding to the vicinity of the opening of the mask plate. 10. The particle arrangement device according to claim 1, wherein said driving means includes a tilt mechanism for tilting the main surfaces of said stage and said mask plate by a small angle from a positional relationship parallel to each other. 11. The particle arrangement device according to claim 1, wherein the driving means is connected only to the stage, and moves the stage up and down with respect to the fixed mask plate. 12. The particle arrangement device according to claim 1, wherein the opening of the mask plate has a size capable of capturing one particle, and the conductive particle for forming a solder bump is handled as the particle. 13. A stage made of a porous flat plate having fine surface irregularities for restricting the movement of particles on one main surface serving as a particle arrangement surface, and a predetermined stage for defining the arrangement of particles on the stage. A first step of supplying particles from above the mask plate while holding the mask plate having openings formed according to the pattern close to each other and in parallel or substantially parallel, and capturing the particles in the openings; A second step of removing excess particles other than the particles trapped in the openings from above the mask plate, a third step of separating the mask plate and the stage, and particles arranged on the stage. A fourth step of transferring to another plane. 14. The particle transfer method according to claim 13, wherein in the first step and the second step, the parallelism between the stage and the mask plate is slightly reduced. 15. The particle transfer method according to claim 13, wherein in the third step, the parallelism between the mask plate and the stage is slightly reduced at least at an initial stage of the separation.