JPH10308412A - Particle arraying device and particle arraying method using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent a transfer omission when bump formation for TAB (tape automatic bonding) and flip chip bonding is performed on a transfer basis. SOLUTION: At a solder ball array part I, a 1st mask plate 5 having a 1st opening 5a with a larger opening diameter than the diameter of a solder ball SB and a 2nd mask plate 6 having a 2nd opening 6a with a small opening diameter are held closely to each other while having their openings aligned with each other, and a solder ball SB is caught in the 1st opening 5a, one by one. The 2nd mask plate 6 holds the solder ball SB by making use of a suction force generated on the surface by evacuation through a porous flat plate 2 on the back side. Then the 1st mask plate 5 is separated from on the 2nd mask plate 6 and the array part stage 1 is conveyed to a solder ball transfer part II, where the solder ball SB is transferred onto the electrode pad 3 of a device chip 31 finally by using a transfer head 21.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a particle arranging apparatus capable of accurately and efficiently transferring a solder ball to an electrode pad of a semiconductor chip or an end of a lead of a TAB (tape automatic bonding) tape, and a particle arranging apparatus. And a particle arrangement method using

[0002]

2. Description of the Related Art As electrical connection methods between electrode pads of a semiconductor device chip and external leads, there are three typical methods: wire bonding, TAB, and flip chip bonding. Among them, the TAB method and the flip chip bonding method require bumps (solder balls) as a medium for electrical connection. That is, T
In the AB method, solder balls are interposed between the electrode pads of the device chip and the film-like leads formed on the TAB tape. In the flip-chip bonding method, the solder balls are formed on the electrode pads of the device chip and the mounting substrate. A solder ball is interposed between the lead and the lead.

As a method of forming the solder ball, an exposed portion of an electrode pad of a device chip is temporarily covered with a barrier metal, a pattern of a solder film covering the barrier metal is formed, and reflow annealing is performed. Conventionally, a method of shrinking a film in a self-aligning manner on a barrier metal using its own surface tension, or a method of forming bumps one by one on an electrode pad using a wire bonder has been widely used.

[0004] In recent years, a transfer bump method has been proposed instead of a direct forming method that requires man-hours and cost as described above. In this method, solder balls are formed on a dedicated transfer substrate by electrolytic plating, the solder balls are aligned with the leads of a TAB tape in the TAB method, and the solder balls are placed in the device in the flip chip bonding method. A method in which solder balls are transferred onto leads and electrode pads by performing thermocompression bonding in a state where they are aligned with the electrode pads of the chip. In particular, it is no exaggeration to say that the TAB method has been generalized by the proposal of the transfer bump method.

However, since solder balls formed by the electrolytic plating method have a flat surface, transfer unevenness occurs if the heights of the individual balls are not exactly uniform. As a technique for solving this problem, Japanese Patent Publication No. 7-27929 discloses an arrangement apparatus for fine metal spheres on the premise that spherical solder balls are arranged on a transfer substrate. However, in the electrolytic plating method, a position where a solder ball is to be formed can be specified in advance, whereas a spherical solder ball is manufactured in a state of being separated. Therefore, how efficiently the spherical solder balls are arranged at predetermined positions determines the success or failure of the above method.

Therefore, in the above-described apparatus, as shown in FIG. 14, a through hole 43 is provided in the transfer substrate 40, and the opening diameter of the through hole 43 is smaller than the diameter of the solder ball bp on the rear surface side, and the upper surface of the through hole 43 By making the transfer substrate 40 itself slightly larger on the side, the transfer substrate 40 itself has the function of a positioning jig,
The pressure of the back surface of the transfer substrate 40 is reduced, so that the solder balls bp are suction-fixed in the through holes 43. The decompression operation at this time is performed by exhausting a back space 47 formed between the transfer substrate 50 and the holder 46 holding the transfer substrate 50 through an exhaust pipe 48.

The through hole 43 is formed by a flat plate 41 having an opening 44 having a diameter d ₁ smaller than the particle diameter of the solder ball, and a diameter d larger than the particle diameter of the solder ball.
_It is formed by laminating a flat plate 42 having an opening 45 having _two . The depth of the through hole 43 is
When the solder ball bp is caught, the solder ball b
p is set to protrude at a height within 1/2 of the particle size, and in practice, the thicknesses t ₁ ,
t ₂ has been optimized. The solder balls bp arranged in this manner are transferred onto, for example, leads on a TAB tape, and the TAB tape is pressed against the device chip, thereby completing the mounting of the device chip.

[0008]

By the way, only one solder ball is arranged for one electrode pad or one lead. Therefore, if solder ball transfer leakage occurs even in a single place of several tens to hundreds of electrodes or leads, the device chip becomes defective. In the above-described device, the solder balls b
Since the transfer is performed while capturing p, the particle size of the solder ball bp needs to be controlled quite strictly in order to secure the amount of protrusion of the solder ball bp required for the transfer. However, when the pitch between adjacent electrode pads or between leads is narrowed, the solder balls bp are miniaturized in accordance with the pitch, so that it is increasingly difficult to uniformly control the particle size itself. In addition, the required flatness of the TAB tape leads, the flatness of the bonding tool, and the parallelism between the transfer substrate and the TAB tape have been increased, and these adjustments will be made in the future as high-density mounting progresses. It is expected that it will be extremely difficult.

Therefore, the present invention provides a particle arrangement apparatus which can transfer particles, typically solder balls, more easily and reliably without performing such difficult control or significantly increasing the precision of the apparatus. And a particle transfer method using the same.

[0010]

According to the particle arrangement apparatus of the present invention, the placement of particles and the definition of the particle arrangement are performed by independent members, respectively. The above-described object is achieved by providing a separating mechanism. The particle arrangement device, as a component for that, a supply means of particles, one main surface is a porous flat plate which is an arrangement surface of particles supplied from the supply means, and supports the porous flat plate, and A stage for forming a closed space together with the other main surface of the porous flat plate, and an exhaust means connected to the closed space and for generating an attractive force on the array surface of the porous flat plates by exhausting the inside thereof; A second mask plate that is held on the arrangement surface of the porous flat plate and has a second opening having a diameter smaller than the diameter of the particles and that is opened according to a predetermined arrangement pattern of the particles; A first mask plate arranged or arranged in parallel proximity and having a first opening having a diameter larger than the diameter of the particles opened according to the same arrangement pattern as the second mask plate; An array drive unit connected to at least one of the stage and the second mask plate so that the mask plate can be freely moved toward and away from the mask plate; and a collection unit that collects excess particles that cannot be completely accommodated in the first opening. And a particle arrangement portion provided with the means.

In order to arrange particles using such a particle arrangement apparatus, the second mask plate and the first mask plate are held close to each other with their openings aligned with each other, and After the particles supplied from the first mask plate side are captured in the first opening while generating a suction force from the plate side, the first mask plate and the second mask plate are separated, and the second opening Arrange the particles one by one on each.
In particular, when the upper limit of the misalignment between the first opening and the second opening is defined as half of the diameter C of the particle, the diameter A of the first opening and the diameter B of the second opening are expressed by the formula (3) 0 0.5A + 0.5B−C> 0 (3) It is preferable to set such that the following relationship is satisfied.

When the particles arranged on the second mask plate in the particle arrangement section are, for example, solder balls, they must be finally arranged on a transfer object such as a device chip. . In the apparatus of the present invention, after temporarily holding the particles arranged on the arrangement surface of the porous flat plate,
A transfer head for fixing the particles on the transfer surface of the transfer object, a stage reciprocating means for reciprocating the stage between the particle array portion and the transfer head, and a transfer device for disposing the transfer object facing the transfer head. And a transfer unit for driving the transferred object.
The transfer head is a transparent flat plate having one main surface as a temporary holding surface for particles, an irradiation optical system for irradiating light from the other main surface side of the transparent flat plate, and the porous flat plate as the holding plate. And a drive unit that can freely approach / separate from / to the array surface or the transfer surface of the transfer object.

The particles are fixed on the transfer surface by bringing the particles held on the holding surface of the transfer head into contact with a coating film of a light-curing adhesive previously formed on the transfer surface. The irradiation can be performed by irradiating light using an irradiation optical system built in the transfer head to cure the coating film.

[0014]

BEST MODE FOR CARRYING OUT THE INVENTION In the particle arranging apparatus and the particle arranging method according to the present invention, particles are arranged in a space formed by overlapping a second opening having a smaller diameter than the particles and a first opening having a larger diameter than the particles. It is important that the particles be accurately captured one by one, and that the particles be stably retained on the second opening even after the first opening is removed. Therefore, in the present invention, the diameter A of the first opening, the diameter B of the second opening, the diameter C of the particles,
It is necessary to optimize the substantial depth of the opening.

First, the conditions for positioning the solder ball on the second opening when the solder ball is used as an example of the particles will be described with reference to FIGS. 10 and 11. FIG. FIG. 10 shows that the solder ball SB is in the second position.
FIG. 11 shows a case where the sound is localized on the opening, and FIG. 11 shows a case where the sound is not localized. In these drawings, the first opening 5a of the first mask plate 5 and the second opening 6a of the second mask plate 6 are overlapped with a predetermined alignment accuracy, and FIG. A state where a solder ball is caught in the first opening 5a of
(B) shows the state when the first mask plate 5 is separated. The magnitude relationship between the diameter A of the first opening 5a, the diameter B of the second opening 6a, and the diameter C of the solder ball SB is, of course, expressed by the following equation (4): B <C <A (4)

[0016] The said first aperture 5a and a second opening 6a, it is ideal to have been superimposed without causing alignment D ₁ displacement. Here, misalignment D
₁ is an amount defined as the distance between the center line a of the first opening 5a and the center line b of the second opening 6a. When ideal alignment is performed, the center lines a and b coincide,
Further, the solder ball SB held on the second opening 6a
Also coincides with these center lines a and b.

[0017] However, because the reality is plain that the slight misalignment D ₁ occurs, solder, even if this occurs
It is necessary to set conditions for holding the ball SB on the second opening 6a. At this time, as shown in FIG. 10A, even when the solder ball SB is not completely supported by the opening end of the second opening 6a when the first mask plate 5 is mounted, the solder ball SB If the center line c passes through the inside of the second opening 6a, even after the first mask plate 5 is removed, as shown in FIG.
B can be supported on the second opening 6a.

This state is, in other words, the first opening 5a.
Than the distance D ₃ from the center to the edge of the second opening 6a, a large (D _2> D ₃₎ states towards deviation D ₂ between a center of the solder ball SB of the first opening 5a. D
₂ and D ₃ are expressed by the following formulas (5) and (6): D ₂ = (A−C) / 2 (5) D ₃ = D _1- (B / 2) W (6) Therefore, the condition for achieving D ₂ > D ₃ is expressed by the following equation (7). A + BC-2D ₁ > 0 (7)

On the other hand, as shown in FIG. 11A, when the center line c of the solder ball SB passes outside the second opening 6a, the first mask plate 5 is separated. As shown in (b), the solder ball SB cannot be supported on the second opening 6a. This state, in other words, the distance D ₃ from the center to the edge of the second opening 6a of the first opening 5a is larger than the displacement D ₂ between a center of the solder ball SB of the first opening 5a (D ₂ <
D ₃₎ a state corresponds to the case where the inequality sign of orientation of the above equation (7) becomes reverse.

[0020] Thus, also to hold the solder balls SB to the second opening 6a occurs misalignment D ₁ slightly, the diameter of the first opening 5a so as to satisfy the equation (4) Equation (7) at the same time A, the diameter B of the second opening 6a and the diameter C of the solder ball SB need to be combined. However, if the diameter A of the first opening 5a is too small, the solder ball SB may remain trapped inside the first opening 5a when the first mask plate 5 is separated,
If it is too large, two or more solder balls SB may be trapped inside one first opening 5a. If the diameter B of the second opening 6a is too small, the supporting state of the solder ball SB becomes unstable. If the diameter B is too large, the solder ball SB gets into the second opening 6a deeply, and is transferred to a subsequent process. There is a fear that it may cause trouble. The first opening 5a experimentally determined by the present inventor in consideration of the above points.
The relationship between the diameter A of the second opening 6a, the diameter B of the second opening 6a, and the diameter C of the solder ball SB is as follows. 1.2C ≦ A ≦ 1.6C (1) 0.25C ≦ B ≦ 0.9C (2)

Next, regarding the substantial depth of the first opening 5a,
Consider with reference to FIGS. here,
The substantial depth H ₁ of the first opening 5 a is an amount defined as a distance from the upper surface of the second mask 6 to the upper surface of the first mask 5, and is a distance between the first mask plate 5 and the second mask plate 6. It is equal to the sum of the gap length g between them and the thickness H ₃ of the first mask plate 5.
That is, the substantial depth H ₁ is expressed by the following equation (8): H ₁ = H ₃ + g (8) In addition, one first opening 5a is closely packed with two solder balls. The lower solder
The ball SB1 is finally left in the first opening 5a, and the upper solder ball SB2 is finally removed as surplus particles.

The optimization of the substantial depth H ₁ is achieved by removing excess solder balls that cannot be accommodated in the first opening 5 a along the upper surface of the first mask plate 5 while keeping the upper surface in parallel and close proximity thereto. This is particularly important when collecting using a moving movable member. This is because the movable member has the first opening 5a.
This is because the solder ball SB1 that has been completely captured must not be damaged, and the excess solder ball SB2 remaining near the opening end of the first opening 5a must be completely removed. For satisfying such conditions are substantially the depth H ₁ is larger than the diameter C of the solder balls of the first opening 5a, and the first inside opening two solder balls are closely packed protruding height H ₂ of the open end of the upper solder balls may be any larger is than the radius (= C / 2) of the solder balls when the.

Therefore, the substantial depth H ₁ of the first opening is
What is necessary is just the range roughly shown by following formula (9). 1C ≦ H ₁ ≦ 1.5C (9) After that, based on the expression (8) as long as the expression (9) is satisfied,
The first may be determined thickness and H ₃ and the gap length g of the mask plate 5. However, it goes without saying that the gap length g should be selected sufficiently smaller than the diameter C of the solder ball SB. The gap length g may be zero. However, when the first mask plate 5 and the second mask plate 6 are separated from each other, a sudden inflow of air between the two plates causes a disorder of the solder / ball arrangement. To prevent the wear of the mask plate,
It is better to set it to a certain size.

[0024] Figure 12, Equation (1), (2), based on (9), substantially the depth H ₁ of the first opening 5a shows a case where the maximum. That is, A = 1.2C; B = 0.25
C: H ₁ = 1.5 C, and the center line of the lower solder ball SB2 substantially coincides with the edge of the second opening 6a, and is supported by the side wall surface of the first opening 5a. It has become. On the other hand, FIG. 13 shows the first opening 5 of the first opening.
shows a case where substantial depth H ₁ of a is minimized. That is, A = 1.6C; B = 0.9C; H ₁ = 1C, and the center line of the lower solder ball SB2 coincides with the center of the second opening 6a, and furthermore, the center of the first opening 5a. It is in contact with the side wall surface. For both Figure 12 and 13, the protruding height H ₂ of the upper solder ball SB2 2 /
C, and can be removed by the movable member.

The first mask plate 5 has its first
Since the diameter A of the opening 5a is larger than the diameter C of the solder ball SB, it can be configured using a metal plate or the like which can be obtained relatively inexpensively. On the other hand, as for the second mask plate 6, since the diameter B of the second opening 6a is smaller than the diameter C of the solder ball SB and high precision is required for its formation, a photosensitive resin film is used as a main body. Preferably, the second opening 6a is formed by using a photolithography technique. As the photosensitive resin film, a photoresist material used in a usual semiconductor device manufacturing process or a photosensitive polyimide film used as a passivation film can be used.

As described above, the first aspect of the particle arrangement apparatus of the present invention is described.
Although the description has been made mainly on the mutual relationship between the dimensions of the opening 5a, the second opening 6a, and the solder ball SB, it is acceptable to actually arrange the solder ball SB particles using the above-described apparatus. set the upper limit value of misalignment D _1, it will determine the diameter a of the first opening 5a to fit to the diameter B of the second opening 6a. In the present invention,
The upper limit of the solder ball S of this misalignment D ₁
Let B be half the diameter C. That is, when D ₁ = 2 / C is substituted into the above equation (7), the following equation (3) is obtained. (A / 2) + (B / 2) -C> 0 (3) The actual diameters A and B are set according to the equation (3).

In the particle arranging method of the present invention, the solder ball SB is held on the second opening 6a by generating a suction force from the second mask plate 6 side. 6 can be generated by holding on one main surface of a porous flat plate and performing exhaust from the other main surface side of the porous flat plate.

According to the present invention, it is possible to obtain a reliable and high throughput without having to strictly adjust the protrusion height of the solder ball, the flatness of the lead of the TAB tape, and the flatness of the bonding tool. Transfers solder balls. The other plane on which the particles arranged by the particle arrangement method of the present invention are transferred refers to a TAB tape on which leads are formed, a device chip having exposed pad electrodes, or a surface of such a TAB tape or device chip. This is an intermediate transfer member that further mediates the transfer of the solder ball.

Hereinafter, specific embodiments of the present invention will be described. Embodiment 1 In this embodiment , a solder-ball arrangement section and a solder-ball transfer section are arranged along one guide rail, and the arrangement and transfer of particles are continuously performed while moving a stage between these sections. A configuration example of a particle transfer device capable of performing the above will be described with reference to FIG. In this apparatus, one end (right side) of the guide rail 9 that defines the moving direction of the arrangement section stage 1 is a solder ball arrangement section I, and the other end (left side) is a solder ball transfer section II. The arrangement section stage 1 is reciprocated in the direction of arrow S between the two sections by driving means (not shown), so that the arrangement of the solder balls SB on the arrangement section stage 1 and the transfer of the solder balls SB to the transfer head 21 are performed. This is done alternately. Further, in the solder ball transfer section II, the elevating pedestal 24 on which the device chip 31 is mounted can reciprocate in the direction of arrow U along the same guide rail 9,
By being positioned just below the transfer head 21 alternately with the arrangement stage 1, the transferred solder balls SB are sequentially received on the transfer surface.

The solder ball arrangement section I is surrounded by a frame 10 having one end opened as a gate 10a for loading and unloading the stage, and the first mask plate 5, From above the first mask plate 5,
Solder ball supply pipe 1 for supplying ball SB
3. A squeegee 7 for scraping excess solder balls SB not arranged on the first mask plate 5, a guide rail 11 for regulating the operation of the squeegee 7 in the direction of arrow Q, and a squeegee 7. Driving means (not shown) for driving is incorporated.

The first mask plate 5 is made of a nickel plate having a thickness of about 40 μm and has a first opening 5 a having a diameter of 55 μm. The diameter of the solder ball SB to be used is 40 μm
Then, the diameter of the first opening 5a is 1.36 times the diameter. Further, if attention is paid only to the thickness of the first mask plate 5,
Although the depth of the first opening 5a is equal to the diameter of the solder ball SB, the gap length g between the first mask plate 5 and a second mask plate 6 described later is added to this thickness in actual use. The substantial depth of the first opening 5a is larger than the diameter of the solder ball SB. In other words, the first opening 5a can accommodate one solder ball SB with a margin, and when the two solder balls SB are overlapped and held, the upper solder ball SB can be accommodated by the radius or more. The squeegee 7 is made to protrude to facilitate removal. The gap between the squeegee 7 and the first mask plate 5 is set to a half or less of the diameter of the solder ball SB, here 20 μm or less, so that the surplus solder ball SB can be raked without leaking. ing.

A porous flat plate 2 made of, for example, a ceramic sintered material is fitted on the upper surface of the arrangement stage 1, and the arrangement stage 1 and the porous flat plate 2 are integrated into a closed space inside. Is formed. This closed space functions as the decompression chamber 3 by being connected to the exhaust unit 12 through the exhaust hole 4 and being exhausted in the direction of the arrow P. Since the porous flat plate 2 has pores having an average diameter of about 0.2 μm and can pass air, if the pressure of the decompression chamber 3 is made lower than the atmospheric pressure by the exhaust unit 12, Thus, a suction force can be generated on the surface of the porous flat plate 2.

A second mask plate 6 is placed on the surface of the porous chamber flat plate 2. The second mask plate 6 is made of a photosensitive polyimide film having a thickness of about 20 μm, and is formed by KrF excimer laser lithography to have a second mask plate having a diameter of about 30 μm.
An opening 6a is formed. The diameter of the second opening 6a is 0.75 of the diameter (40 μm) of the solder ball SB.
It is twice. Accordingly, the solder ball SB is
It does not fall into the inside of the opening 6a and is stably held at the upper end thereof.

The array stage 1 is provided with the guide
It is fixed on an elevating pedestal 8 engaged with a rail 9. That is, the array stage 1 is moved by moving the elevating pedestal 8 along the arrow S direction. Further, the elevating pedestal 8 is extendable in the directions of arrows R ₁ and R ₂ , and the gap length g between the second mask plate 6 and the first mask plate 5 in the solder ball arrangement portion I. Is adjustable. However, the amount of expansion and contraction in the directions of the arrows R ₁ and R ₂ may not be uniform over the entire surface of the array stage 1. For example, by using an actuator to reduce the amount of expansion and contraction at one end of the array stage 1 and to reduce the amount of expansion and contraction at the other end, the first mask plate 5 from the first mask plate 5 at the time of solder ball arrangement or after the solder ball arrangement is used. At the time of separation, the particle arrangement surface of the arrangement section stage 1 can be slightly inclined from the horizontal plane.

On the other hand, a transfer head 21 is provided in the solder / ball transfer section II. This transfer head 21
An irradiation optical system 23 is built in, and a quartz window 22 having a surface coated with an adhesive paint is provided on the surface facing the stage. The irradiation optical system 23 uses UV to fix the solder balls SB on the electrode pads 32 of the device chip 31 as described later.
An exposure light source for supplying light energy required for an adhesive curing reaction, and a light for uniformly guiding the exposure light from the light source to the quartz window 22 are provided for performing the curing through an adhesive. It consists of a fiber bundle. The transfer head 21 moves up and down along the directions of the arrows T ₁ and T ₂ to attach the solder balls SB arranged on the second mask plate 6 to the quartz window 22, and further attaches the solder balls SB. Transfer onto device chip 31. The device chip 31 is mounted on the upper surface of the transfer unit stage 25, and the transfer unit stage 25 is further connected to an elevating pedestal 24.
It is adapted to be engaged with the rail 9 and reciprocated in the direction of arrow U.

In FIG. 1, the up-and-down pedestal 8 and the up-and-down pedestal 24 move alternately below the transfer head 21. However, the particle arrangement apparatus of the present invention is not limited to such a structure. For example, solder ball SB is placed in quartz window 2
After the transfer head 21 is attached to the surface of
The chip 31 may be moved to a position where the chip 31 is held, and the solder ball SB may be transferred there.
Further, when the transfer of the solder balls SB using a transfer head 21, the transfer head alone rather than lifting the arrow T _1, T ₂ direction, even if carried out a vertical movement of the elevating pedestal 8,24 simultaneously good.

When the particle arrangement apparatus of the present invention having such a configuration is used, the transfer of the solder balls SB is performed while being separated from the first mask plate 5, so that the solder ball SB is transferred from the surface of the transfer substrate as in the prior art.・ Even if there is no need to perform advanced control of the protrusion height of the ball SB and the ball particle size,
It becomes possible to transfer the solder ball to the chip without leakage.

Embodiment 2 Here, FIGS. 2 to 9 show a method of actually transferring the solder balls SB onto the electrode pads 32 of the device chip 31 using the particle arrangement apparatus described in Embodiment 1. It will be described with reference to FIG. FIG. 2 shows a state where the first mask plate 5 and the second mask plate 6 are brought close to each other and held horizontally, and solder balls S are provided at one corner of the first mask plate 5.
The state which supplied B is shown. At this time, the decompression chamber 3 is exhausted in the direction of arrow P, and as a result, a suction force is generated on the surface of the second mask plate 6. The supplied solder ball SB was drawn into the first opening 5a by the suction force. At this time, a minute vibration may be applied to the first mask plate 5 to promote the incorporation of the solder ball into the first opening 5a.

Next, as shown in FIG. 3, by moving the squeegee 7 in the direction of arrow Q along the surface of the first mask plate 5, the squeegee 7 is not accommodated in the first opening 5a, or The solder balls SB protruding from the upper end of the opening 5a were collected. By this operation, only the excess solder ball SB was collected without any damage to the solder ball SB accommodated in the first opening 5a.

Next, as shown in FIG. 4, the array stage 1 was lowered in the direction of arrow R ₁ to separate the second mask plate 6 from the first mask plate 5. At this time, the evacuation of the decompression chamber 3 was continued, and one solder ball SB was stably held on each second opening 6a. If the tilting operation of the array stage 1 is performed in the initial stage of separation of the two mask plates 5 and 6, the first mask plate 5 and the array stage 1 can be moved.
Between the solder ball S
The correct sequence of B can be maintained. The attitude of the array section stage 1 may be returned to the horizontal position when the influence of the turbulence of the airflow becomes negligible.

Next, as shown in FIG. 5, the raising / lowering pedestal 8 is moved in the direction of the arrow S, so that the array stage 1 is carried into the solder / ball transfer section II and is directly below the transfer head 21. And the solder / ball arrangement surface of the second mask plate 6 and the solder / ball transfer surface of the transfer head 21, that is, the quartz window 22, were opposed in parallel.

Next, as shown in FIG. 6, the transfer head 21 is lowered in the arrow T ₁ direction, it is brought into contact with the coated surface of the quartz window 22 in advance adhesive material solder balls SB. According to the present invention, each solder ball SB is present on the second mask plate 6 in an exposed state, and the coating film of the adhesive material absorbs the difference in height of each solder ball SB to determine which ball. Was able to make enough contact. Thereafter, the evacuation of the decompression chamber 3 was stopped.

Next, as shown in FIG. 7, the transfer head 21 is raised in the arrow T ₂ direction, it returns an array unit stage 1 the solder ball array section I, transferring the transfer portion stage 25 replaces the this The head was moved directly below the head 21.
A device chip 31 is mounted on the transfer section stage 25 with the surface on which the electrode pads 32 are formed facing upward. The UV curing adhesive coating film 22 is formed on the surface of each electrode pad 32 in advance. Have been. The relative position between the transfer head 21 and the transfer unit stage 25 is adjusted so that the solder balls SB and the electrode pads 32 are accurately aligned.

Next, as shown in FIG.
1 is lowered in the arrow T ₁ direction, the solder balls SB U
The V-cured adhesive coating 22 was brought into contact. In this state, the exposure optical system 23 irradiated UV light hν. This UV light transmitted through the quartz window 22 to cure the UV curable adhesive coating 33, thereby fixing the solder balls SB on the electrode pads 32. Thereafter, the transfer head 21 is raised in the arrow T ₁ direction, as shown in FIG. 9, device chip 3
The transfer of the solder ball SB onto No. 1 has been completed. By the method as described above, the solder ball SB was quickly transferred onto the device chip 31 without any leakage and without any damage.

Although two embodiments of the present invention have been described above, the present invention is not limited to these embodiments. For example, after the solder balls arranged on the arrangement stage 1 are carried out to the particle transfer section, the TAB tape is directly read using a normal bonding tool without using the above-described transfer head. May be heat-pressed. In addition, the constituent materials and diameters of the solder balls, the thickness of the first mask plate and the second mask plate, the dimensions of the openings, and the details of the configuration of the particle arrangement device are appropriately changed.
Selection and combination are possible. Furthermore, the present invention
The present invention can be widely applied to the arrangement and transfer of fine particles other than balls, for example, metal particles such as Au balls, Cu balls, and Ni balls, carbon particles, or elastic conductive particles obtained by applying metal plating to the surface of resin beads. .

[0046]

As is apparent from the above description, according to the particle arrangement apparatus and the particle arrangement method using the same, the diameter of the solder ball, the flatness of the TAB tape lead, the bonding tool The solder ball balls can be simply and reliably arranged and transferred without so strictly controlling the flatness of the substrate and the parallelism of the transfer substrate (stage) with the TAB tape or semiconductor device chip. Thereby, the yield of bonding by the TAB method and the flip chip bonding method can be improved, and the productivity of the semiconductor device can be improved.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view showing one configuration example of a particle arrangement device of the present invention.

FIG. 2 is a schematic cross-sectional view showing a state where solder balls are supplied onto the first mask plate in a state where the second mask plate and the first mask plate are aligned in one example of the particle arrangement method of the present invention. is there.

FIG. 3 is a schematic cross-sectional view showing a state in which a solder ball is captured in a first opening of a first mask plate in FIG. 2 and excess solder ball is collected using a squeegee.

FIG. 4 is a schematic cross-sectional view showing a state where a first mask plate and a second mask plate of FIG. 3 are separated.

FIG. 5 is a schematic cross-sectional view showing a state in which the array stage of FIG. 4 is moved below the transfer head.

6 is a schematic cross-sectional view showing a state where a solder hole is being transferred to the transfer head of FIG. 5;

FIG. 7 is a schematic sectional view showing a state where a device chip is set below the transfer head of FIG. 6;

FIG. 8 is a schematic cross-sectional view showing a state where a solder ball is being transferred onto the device chip of FIG. 7;

FIG. 9 is a schematic cross-sectional view showing a state where solder balls have been transferred onto the device chip of FIG. 8;

10A and 10B are schematic cross-sectional views for explaining conditions when a solder ball is localized on a second opening, and FIG.
Indicates a state when the first mask plate is mounted, and (b) indicates a state when the first mask plate is separated.

FIG. 11 is a schematic cross-sectional view for explaining conditions when a solder ball is not localized on the second opening;
(A) shows the state when the first mask plate is mounted, and (b) shows the state when the first mask plate is separated.

FIG. 12 is a graph showing a condition in which the upper portion of the first opening has a substantial depth to explain conditions under which the upper solder ball particles can be removed when two solder balls are closely packed in the first opening; FIG. 4 is a schematic cross-sectional view showing a state of the second embodiment.

FIG. 13 is a graph showing a condition in which the substantial depth of the first opening is minimum in order to explain conditions under which the upper solder ball particles can be removed when two solder balls are closely packed in the first opening; FIG. 4 is a schematic cross-sectional view showing a state of the second embodiment.

FIG. 14 is a schematic cross-sectional view showing one configuration example of a conventional arrangement device of fine metal spheres.

[Explanation of symbols]

Reference Signs List 1 Arrangement stage 2 Porous flat plate 3 Decompression chamber 4 Exhaust hole 5 First mask plate 5a First opening 6 Second mask plate 6a Second opening 7 Squeegee 8, 24 Elevating pedestal 12 Exhaust unit 21 Transfer head 22 Quartz window 23 Irradiation optical system 25 Transfer stage 31 Device chip 32 Pad electrode 33 UV curing adhesive coating SB Solder ball I Solder / ball array unit II Solder / ball transfer unit A Diameter of first opening 5a B Diameter of second opening C Solder ball diameter D ₁ Misalignment between first opening and second opening D ₂ Misalignment between center of _first opening and center of solder ball D ₃ Distance from center of first opening to edge of second opening H ₁ thickness g gap length protruding height H ₃ first mask plate of the first opening of the real depth H ₂ above the solder ball

Claims (12)

[Claims] 1. A means for supplying particles, a porous flat plate having one main surface as an arrangement surface of particles supplied from the supply means, and the other of the porous flat plate supporting the porous flat plate A stage that forms a closed space together with the main surface of the porous flat plate; an exhaust unit that is connected to the closed space and that generates an attractive force on the array surface of the porous flat plates by exhausting the interior; and an array surface of the porous flat plates. A second mask plate held on the second mask plate, the second opening having a diameter smaller than the diameter of the particles, the second mask plate being opened according to a predetermined arrangement pattern of the particles; A first mask plate having a first opening having a diameter larger than the diameter of the particles is opened according to the same arrangement pattern as the second mask plate; Separable freely And an array driving unit connected to at least one of the stage and the second mask plate, and a collecting unit for collecting surplus particles that cannot be completely accommodated in the first opening. A particle arrangement device having: 2. A diameter A of a first opening of the first mask,
The diameter B of the second opening of the second mask plate and the diameter C of the particles are represented by the following equations (1) and (2): 1.2C ≦ A ≦ 1.6C (1) 0.25C ≦ B The particle arrangement device according to claim 1, wherein the following relationship is simultaneously satisfied. 3. The particle arrangement device according to claim 1, wherein said collection means includes a movable member which moves along said upper surface of said first mask plate while keeping said upper surface in parallel and close proximity thereto. 4. A method according to claim 1, wherein a substantial depth of said first opening, defined as a distance from an upper surface of said second mask plate to an upper surface of said first mask plate, is larger than a diameter of said particles, and said first opening. 4. The particle arrangement device according to claim 3, wherein the height of the upper particle projecting from the opening end when two particles are closely packed is larger than the radius of the particle. 5. The particle arrangement device according to claim 1, wherein said second opening is formed by a photolithography technique on a photosensitive resin film constituting a main body of said second mask plate. 6. A transfer head for temporarily holding particles arranged on the arrangement surface of the porous flat plate, and then fixing the particles on the transfer surface of the object, and the particle arrangement unit. A stage reciprocating unit for reciprocating the stage between the transfer head and the transfer head; and a transfer unit driving unit for disposing the transfer target to face the transfer head. A transparent flat plate having one main surface as a temporary holding surface for particles, an irradiation optical system for irradiating light from the other main surface side of the transparent flat plate, 2. The particle transfer device according to claim 1, further comprising a driving unit having a surface that can be freely moved toward and away from the arrangement surface of the porous flat plates or the transfer surface of the transfer object. 7. A second mask plate in which a second opening having a diameter smaller than the diameter of the particle is opened according to an arrangement pattern of the particles, and a first opening having a diameter larger than the diameter of the particle is formed in the second mask plate. The first mask plate opened according to the arrangement pattern is held close to each other in a state where the openings are aligned with each other, and is supplied from the first mask plate side while generating a suction force from the second mask plate side. A first step of trapping particles in the first opening; and a second step of separating the first mask plate from the second mask plate and arranging the particles one by one on each of the second openings. A particle arrangement method having the following. 8. The suction force is generated by holding the second mask plate on one main surface of a porous flat plate and exhausting air from the other main surface side of the porous flat plate. Particle transfer method. 9. When the upper limit of the misalignment between the first opening and the second opening is set to a half of the diameter C of the particle, the diameter A of the first opening and the diameter B of the second opening are expressed by the following formula. (3) The particle arrangement method according to claim 7, wherein the setting is made so as to satisfy the relationship of (A / 2) + (B / 2) -C> 0 (3). 10. After the particles arranged on the second mask plate are temporarily held on the holding surface of the transfer head, the particles are further fixed on the transfer surface of the transfer object. The particle arrangement method described in the above. 11. The fixing of the particles on the transfer surface is performed by bringing the particles held on the holding surface of the transfer head into contact with a coating film of a light-curing adhesive previously formed on the transfer surface. 11. The method according to claim 10, wherein the coating film is cured by irradiating light using an irradiation optical system built in the transfer head in this state. 12. The device according to claim 11, wherein a solder ball is used as the particles, and a device chip is used as the transfer object, and the coating film of the photocurable adhesive is formed on the electrode pads of the device chip. Particle arrangement method.