WO2022052058A1

WO2022052058A1 - Light emitting panel and preparation method therefor, and electronic device

Info

Publication number: WO2022052058A1
Application number: PCT/CN2020/114866
Authority: WO
Inventors: 王小渭; 孔云川; 赵锋
Original assignee: 华为技术有限公司
Priority date: 2020-09-11
Filing date: 2020-09-11
Publication date: 2022-03-17
Also published as: CN116097440A; CN116097440A8

Abstract

A light emitting panel (01) and a preparation method therefor, and an electronic device, which relate to the technical field of display, and are used for solving the problems of light emitting diode (LED) chips being transferred many times and the LED chips being prone to being damaged during the manufacturing of a light emitting panel (01). The preparation method for a light emitting panel (101) comprises: transferring an LED epitaxial thin film (8) to a target substrate (1), wherein the LED epitaxial thin film (8) comprises a first semiconductor thin film (81), a light emitting thin film (82) and a second semiconductor thin film (83) that are stacked sequentially, and the doping type of the first semiconductor thin film (81) is different from that of the second semiconductor thin film (83); and patterning the LED epitaxial thin film (8) to form a plurality of LED crystal grains (2), wherein the LED crystal grains (2) comprise a first semiconductor layer (21), a light emitting layer (22) and a second semiconductor layer (23) that are stacked sequentially on the target substrate (1). The preparation method can be used for manufacturing a micro LED display panel.

Description

A light-emitting panel, a preparation method thereof, and an electronic device

technical field

The present application relates to the field of display technology, and in particular, to a light-emitting panel, a preparation method thereof, and an electronic device.

Background technique

At present, micro light emitting diodes (micro light emitting diodes, micro LEDs) have been widely used in lighting, display panels and as backlights of liquid crystal display panels due to their advantages of small size, long life, and energy saving.

The manufacturing process of the LED chip is as follows: firstly, the LED epitaxial film is grown on the substrate. The LED epitaxial film includes an N-type semiconductor film, a light-emitting film and a P-type semiconductor film stacked in sequence, and then the LED epitaxial film is etched to form a plurality of LED crystals. The LED die includes a stacked N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer. After that, an N-electrode in contact with the N-type semiconductor layer and a P-electrode in contact with the P-type semiconductor layer are fabricated, and finally cut and packaged to obtain Multiple LED chips. Generally, an LED chip with a side length of an LED chip below 50 μm or an LED chip area below 500 μm ² is called a micro LED chip. LED chips, especially micro LED chips, need to be transferred in large quantities, that is, millions to tens of millions of tiny LED chips need to be transferred to the target substrate. However, due to the small number of transfers per time, multiple transfers are required, which leads to problems such as time-consuming, low efficiency, and high production costs. In addition, because the transfer process needs to be in contact with each LED chip, the LED chip is prone to damage, and the risk of yield is too high, requiring more inspection and repair work in the later stage, reducing efficiency and increasing costs.

SUMMARY OF THE INVENTION

Embodiments of the present application provide a light-emitting panel, a method for manufacturing the same, and an electronic device, which are used to improve the problems of many times of transferring LED chips and easy damage of LED chips in the process of manufacturing the light-emitting panel.

To achieve the above object, the application adopts the following technical solutions:

In a first aspect, a method for manufacturing a light-emitting panel is provided. The preparation method of the light-emitting panel includes the following steps: firstly, transferring the light-emitting diode LED epitaxial film to the target substrate; wherein, the LED epitaxial film includes a first semiconductor film, a light-emitting film and a second semiconductor film that are stacked in sequence; the first semiconductor film The doping types of the thin film and the second semiconductor thin film are different; then, the LED epitaxial thin film is patterned to form a plurality of LED crystal grains; the LED crystal grains include a first semiconductor layer, a light-emitting layer and a second semiconductor layer that are sequentially stacked on the target substrate A semiconductor layer; wherein, the first semiconductor layer is obtained by patterning the first semiconductor film, the light-emitting layer is obtained by patterning the light-emitting film, and the second semiconductor layer is obtained by patterning the second semiconductor film. In the above-mentioned preparation method of the light-emitting panel, the LED epitaxial film is first moved to the target substrate, and then the LED epitaxial film is patterned to form a plurality of LED crystal grains. Compared with the prior art, multiple LED chips are formed first, and then multiple LED chips are transferred to the target substrate for multiple times. Since the embodiment of the present application transfers the entire LED epitaxial film to the target substrate, the transfer time can be reduced. Improve transfer efficiency. On this basis, compared with the prior art, when transferring LED chips, the transfer device needs to be in contact with each LED chip, while in the embodiment of the present application, when transferring the LED epitaxial film, since the LED epitaxial film includes the components used to form the LED die Therefore, when the transfer equipment transfers the LED epitaxial film, the transfer equipment can contact the area of the LED epitaxial film that is not used for forming LED chips, or reduce the contact with the LED epitaxial film for forming LED chips. The regional contact area of the LED die, so that the damage of the LED die during the transfer process can be reduced. In addition, in the prior art, during the preparation of LED chips, the LED epitaxial films are etched and the electrodes are fabricated by traditional LED chip manufacturers, using equipment and processes for preparing LED chips. And when LED chips are used in Micro LED display panels, when making LED chips, it is necessary to upgrade the traditional equipment for preparing LED chips and make environmental modifications, which increases production costs. In the embodiment of the present application, after the LED epitaxial film is transferred to the target substrate, the LED epitaxial film can be etched by the panel manufacturer using the panel production equipment and process. On the one hand, it saves the need to upgrade the traditional LED chip preparation equipment and environmental transformation, saving equipment investment and production costs; Therefore, large-area batch processing can be achieved, the processing accuracy is higher, and a finer LED grain size can be achieved. In the case where the light-emitting panel is a display panel, display products with higher resolution or higher pixel density can be produced.

In a possible implementation manner, the target substrate is a base substrate; after forming a plurality of LED die, the preparation method of the light-emitting panel further includes: forming a first electrode, a second electrode and a driving circuit on the LED die; The first electrode is in contact with the first semiconductor layer and is electrically connected with the driving circuit; the second electrode is in contact with the second semiconductor layer. Here, the LED epitaxial film is firstly transferred on the base substrate, and the LED epitaxial film is patterned to form a plurality of LED crystal grains, and then the first electrode, the second electrode and the driving circuit are formed, so that the requirements for the transfer accuracy will be further reduced. , to further improve yield and improve production efficiency.

In a possible implementation manner, the target substrate includes a base substrate and a plurality of driving circuits arranged on the base substrate and distributed in an array; after forming the plurality of LED die, the preparation method of the light-emitting panel further includes: on the LED die A first electrode is formed on the particle; the first electrode is in contact with the first semiconductor layer and is electrically connected with the driving circuit. The driving circuit is first formed on the base substrate, then the LED epitaxial film is transferred, and the LED epitaxial film is patterned to form a plurality of LED crystal grains, which can avoid damaging the LED crystal grains when the driving circuit is formed.

In a possible implementation manner, the target substrate includes a base substrate, a plurality of driving circuits arranged on the base substrate and distributed in an array, and a first electrode electrically connected to the driving circuit; wherein, the first semiconductor layer and the first electrode touch. Since the target substrate includes the driving circuit and the first electrode, and the first electrode is connected to the driving circuit, after forming a plurality of LED die, only the electrode in contact with the second semiconductor layer needs to be formed, and the manufacturing process is simple.

In a possible implementation manner, the target substrate further includes a common electrode layer disposed on the base substrate; after forming the plurality of LED die, the manufacturing method of the light-emitting panel further includes: forming a second electrode on the LED die ; The second electrode is in contact with the second semiconductor layer and the common electrode layer, respectively.

In a possible implementation manner, after forming the plurality of LED die, the manufacturing method of the light emitting panel further includes: forming a common electrode layer on the LED die; and the common electrode layer is in contact with the second semiconductor layer. A common electrode layer is directly fabricated, and the common electrode layer is in contact with the second semiconductor layers of all the plurality of LED chips, which can simplify the fabrication process of the light-emitting panel.

In a possible implementation manner, the driving circuit includes a transistor; the first electrode is electrically connected to the drain or source of the transistor; wherein the transistor is a thin film transistor or a MOS transistor.

In a possible implementation manner, the LED epitaxial film is planar; or, before transferring the light emitting diode LED epitaxial film to the target substrate, the preparation method of the light-emitting panel further includes: patterning the LED epitaxial film to form a plurality of The strip-shaped structure distributed in parallel; transferring the light-emitting diode LED epitaxial thin film to the target substrate includes: transferring at least one strip-shaped structure among the plurality of parallel-distributed strip-shaped structures to the target substrate. Here, when patterning the LED epitaxial film to form a plurality of parallel strip structures, the gap between two adjacent strip structures can be set to be small during the patterning process, so that the etched strips in the LED epitaxial film are small. The area will be reduced, thereby avoiding material waste and greatly improving the utilization rate of materials.

In a possible embodiment, the light-emitting layer is used to emit one of the three primary colors of light.

In a second aspect, a light-emitting panel is provided, comprising: a target substrate; a plurality of LED chips arranged on the target substrate; the LED chips include a first semiconductor layer, a light-emitting layer and a second semiconductor layered and arranged on the target substrate in sequence layer; the doping types of the first semiconductor layer and the second semiconductor layer are different; the light-emitting panel further includes: a first electrode and a driving circuit; wherein, the first electrode is respectively connected with the drain or source of the transistor in the first semiconductor layer and the driving circuit extremely contact. Since a plurality of LED crystal grains can be obtained by transferring the LED epitaxial film (the LED epitaxial film includes the first semiconductor film, the light-emitting film and the second semiconductor film stacked in sequence) to the target substrate, and patterning the LED epitaxial film, Therefore, when making LED chips, the transfer time can be reduced and the transfer efficiency can be improved. In addition, damage to the LED die during the transfer process can also be reduced.

In a possible implementation manner, the target substrate is a base substrate; the driving circuit is arranged on the LED die; the first electrode is in contact with the surface of the first semiconductor layer away from the target substrate; the second electrode; the second electrode is in contact with the surface of the second semiconductor layer away from the target substrate. First, a plurality of LED dies are formed on the base substrate, and then the first electrode, the second electrode and the driving circuit are formed, so that the requirements on the transfer accuracy will be further reduced, the yield rate will be further improved, and the production efficiency will be improved.

In a possible implementation manner, the target substrate includes a base substrate and a plurality of driving circuits arranged on the base substrate and distributed in an array; the light-emitting panel further includes a second electrode arranged on the LED die, the second electrode is connected to the first electrode The two semiconductor layers are in contact with the surface away from the target substrate; wherein, the first electrode is in contact with the surface of the first semiconductor layer away from the target substrate, and the first electrode is away from the base substrate relative to the drain or source in contact with it. The driving circuit is first formed on the base substrate, and then a plurality of LED chips are formed, so that the LED chips can be prevented from being damaged when the driving circuit is formed.

In a possible implementation manner, the target substrate further includes a common electrode layer disposed on the base substrate; the second electrode is also in contact with the common electrode layer.

In a possible implementation manner, the target substrate includes a base substrate, a plurality of driving circuits arranged on the base substrate and distributed in an array, and a first electrode in contact with the drain or source of the transistor in the driving circuit; the first electrode contact with the surface of the first semiconductor layer close to the target substrate; the light emitting panel further includes a common electrode layer disposed on the side of the second semiconductor layer away from the base substrate, the common electrode layer is in contact with the surface of the second semiconductor layer away from the target substrate. After forming a plurality of LED chips on the target substrate, a common electrode layer is directly fabricated, and the common electrode layer is in contact with the second semiconductor layers of all the plurality of LED chips, which can simplify the fabrication process of the light-emitting panel.

In a possible implementation manner, the target substrate includes a base substrate, a plurality of driving circuits arranged on the base substrate and distributed in an array, a first electrode in contact with a drain or a source of a transistor in the driving circuit, and a common electrode layer the first electrode is in contact with the surface of the first semiconductor layer close to the target substrate; the light emitting panel further includes a second electrode arranged on the target substrate; the second electrode is in contact with the surface of the second semiconductor layer away from the target substrate and the common electrode layer respectively.

In a third aspect, an electronic device is provided, including the above-mentioned light-emitting panel and printed circuit board. The electronic device has the same technical effects as the foregoing embodiments, which will not be repeated here.

Description of drawings

FIG. 1 is a schematic structural diagram of a light-emitting panel according to an embodiment of the present application;

FIG. 2a is a schematic structural diagram of a light-emitting panel according to another embodiment of the present application;

FIG. 2b is a schematic structural diagram of a light-emitting panel according to another embodiment of the present application;

FIG. 2c is a schematic structural diagram of a light-emitting panel according to still another embodiment of the present application;

FIG. 3 is a schematic structural diagram of a light-emitting panel according to another embodiment of the present application;

FIG. 4 is a schematic structural diagram of a light-emitting panel according to another embodiment of the present application;

FIG. 5 is a schematic structural diagram of a light-emitting panel according to still another embodiment of the present application;

FIG. 6 is a schematic structural diagram of a light-emitting panel according to another embodiment of the present application;

FIG. 7 is a schematic structural diagram of a light-emitting panel according to another embodiment of the present application;

FIG. 8 is a schematic structural diagram of a light-emitting panel according to still another embodiment of the present application;

FIG. 9 is a schematic structural diagram of a driving circuit provided by an embodiment of the present application;

FIG. 10 is a schematic diagram of a connection relationship between a driving circuit and a pixel according to an embodiment of the application;

11 is a schematic structural diagram of a driving circuit provided by another embodiment of the present application;

FIG. 12 is a schematic structural diagram of the pixel driving circuit in FIG. 11;

13 is a schematic flowchart of a method for manufacturing a light-emitting panel according to an embodiment of the present application;

FIG. 14 is a first structural schematic diagram in the process of a method for manufacturing a light-emitting panel provided by an embodiment of the present application;

FIG. 15 is a second structural schematic diagram in the process of a method for manufacturing a light-emitting panel provided by an embodiment of the present application;

FIG. 16 is a third structural schematic diagram in the process of a method for manufacturing a light-emitting panel provided by an embodiment of the present application;

FIG. 17 is a fourth schematic structural diagram in the process of a method for manufacturing a light-emitting panel provided by an embodiment of the present application;

FIG. 18 is a schematic structural diagram 5 in the process of a method for manufacturing a light-emitting panel provided by an embodiment of the present application;

FIG. 19 is a sixth schematic structural diagram in the process of a manufacturing method of a light-emitting panel provided by an embodiment of the present application;

FIG. 20 is a seventh schematic structural diagram in the process of a manufacturing method of a light-emitting panel provided by an embodiment of the present application;

21 is a schematic structural diagram eight in the process of a method for manufacturing a light-emitting panel according to an embodiment of the present application;

FIG. 22 is a schematic structural diagram 9 in the process of a manufacturing method of a light-emitting panel provided by an embodiment of the present application.

Reference number:

01-light-emitting panel; 02-subpixel; 03-pixel; 1-target substrate; 2-LED die; 3-drive circuit; 4-first insulating layer; 5-second insulating layer; 6-common electrode layer; 8-LED epitaxial film; 9-substrate; 10-stripe structure; 11-substrate substrate; 21-first semiconductor layer; 22-light-emitting layer; 23-second semiconductor layer; 24-first electrode; 25- 31-drain (source); 32-analog circuit part; 33-digital circuit part; 71-current source; 72-gating switch; 81-first semiconductor film; 82-light emitting film; 83- The second semiconductor thin film; 100-effective display area; 101-non-display area.

detailed description

The technical solutions in the embodiments of the present application will be described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments.

Hereinafter, the terms "first", "second", etc. are only used for convenience of description, and should not be construed as indicating or implying relative importance or implying the number of indicated technical features. Thus, a feature defined as "first", "second", etc., may expressly or implicitly include one or more of that feature. In the description of this application, unless stated otherwise, "plurality" means two or more.

In addition, in the embodiments of the present application, "upper", "lower", "left" and "right" are not limited to be defined relative to the schematic placement of components in the drawings, and it should be understood that these directional terms may be Relative notions, they are used for relative description and clarification, which may vary accordingly depending on the orientation in which the components are placed in the drawings.

In this application, unless otherwise expressly specified and limited, the term "connection" should be understood in a broad sense. For example, "connection" may be a fixed connection, a detachable connection, or an integrated body; it may be directly connected, or Can be indirectly connected through an intermediary. In addition, the term "electrical connection" may be a direct electrical connection or an indirect electrical connection through an intermediate medium.

The embodiments of the present application provide a light-emitting panel, which can be used as a light source for lighting or provide a backlight for a liquid crystal display panel, and can also be used as a display panel for displaying images and the like. In the case where the light-emitting panel is used as a display panel, the display panel may also be referred to as a micro LED display panel.

In some embodiments of the present application, as shown in FIG. 1 , the main structure of the light emitting panel 01 includes a target substrate 1 and a plurality of LED dies 2 disposed on the target substrate 1 . The LED die 2 includes a first semiconductor layer 21 , a light emitting layer 22 and a second semiconductor layer 23 sequentially stacked on the target substrate 1 , and the first semiconductor layer 21 and the second semiconductor layer 23 have different doping types. For example, the first semiconductor layer 21 is P-type doped, that is, the first semiconductor layer 21 is a P-type semiconductor layer (also referred to as a hole-type semiconductor layer), and the second semiconductor layer 23 is N-type doped, that is, the second semiconductor layer The layer 23 is an N-type semiconductor layer (also referred to as an electron-type semiconductor layer), or the first semiconductor layer 21 is N-type doped, that is, the first semiconductor layer 21 is an N-type semiconductor layer, and the second semiconductor layer 23 is a P-type semiconductor layer. type doping, that is, the second semiconductor layer 23 is a P-type semiconductor layer.

Here, the first semiconductor layer 21 may be close to the target substrate 1 relative to the second semiconductor layer 23 , or the second semiconductor layer 23 may be close to the target substrate 1 relative to the first semiconductor layer 21 , which is not limited. The drawings in the description all illustrate that the first semiconductor layer 21 is close to the target substrate 1 relative to the second semiconductor layer 23 as an example.

As shown in FIGS. 2a, 2b, 2c, 3, 4, 5 and 6, the light-emitting panel 01 further includes: a first electrode 24 and a driving circuit; wherein the first electrode 24 is respectively connected to the first semiconductor layer 21 is in contact with the drain 31 or the source 31 of the transistor in the drive circuit. 2a, 2b, 2c, 3, 4, 5 and 6 only illustrate the drain 31 or the source 31 of the transistor in the drive circuit that is in contact with the first electrode 24.

It should be understood that, in the embodiment of the present application, in the case where the type of the transistor in contact with the first electrode 24 in the driving circuit is an N-type transistor, the first electrode 24 is in contact with the source electrode 31 of the transistor in the driving circuit; in the driving circuit When the type of the transistor in contact with the first electrode 24 is a P-type transistor, the first electrode 24 is in contact with the drain 31 of the transistor in the driving circuit.

An embodiment of the present application provides a light-emitting panel 01, the light-emitting panel 01 includes a target substrate 1 and a plurality of LED die 2 disposed on the target substrate 1, the light-emitting panel 01 further includes a first electrode 24 and a driving circuit; the first electrode 24 It is in contact with the first semiconductor layer 23 and the drain electrode 31 or the source electrode 31 of the transistor in the driving circuit, respectively. Compared with the prior art, a plurality of LED chips are formed first, and then the plurality of LED chips are transferred to the target substrate 1 for many times to form a micro LED display panel. Since the LED chip includes the LED die 2 and the LED die 2 Therefore, in the prior art, the LED epitaxial thin film (the LED epitaxial thin film includes the first semiconductor thin film, the light emitting thin film and the second semiconductor thin film which are stacked in sequence) must be patterned before the transfer in the prior art. , and since the first electrode 24 is in contact with the first semiconductor layer 24 and the drain electrode 31 or the source electrode 31 of the transistor in the driving circuit respectively in the embodiment of the present application, the first electrode 24 and the LED die 2 will not be transferred at the same time, Therefore, the plurality of LED die 2 can be obtained by transferring the LED epitaxial film to the target substrate 1 and patterning the LED epitaxial film. In this way, the transfer time can be reduced in the process of preparing the light-emitting panel 01 in the embodiment of the present application. Improve transfer efficiency and reduce production costs. On this basis, compared with the prior art, when transferring LED chips, the transfer device needs to be in contact with each LED chip, while in the embodiment of the present application, when transferring the LED epitaxial film, since the LED epitaxial film includes the components used to form the LED die 2 and the area not used to form LED die 2, so when the transfer device transfers the LED epitaxial film, the transfer device can contact the area of the LED epitaxial film that is not used to form the LED die 2, or reduce contact with the LED epitaxial film. The contact area of the area used to form the LED die 2 can reduce the damage of the LED die 2 during the transfer process, reduce the risk, reduce the inspection and repair work of the LED die 2 in the later stage, improve the production efficiency and reduce the production cost.

On this basis, in the prior art, during the preparation of LED chips, the LED epitaxial films are etched and the electrodes are fabricated by traditional LED chip manufacturers using equipment and processes for preparing LED chips. And when the LED chip is used in the micro LED display panel, when manufacturing the LED chip, it is necessary to upgrade and modify the environment of the traditional LED chip manufacturing equipment, which increases the production cost. In the embodiment of the present application, after the LED epitaxial film is transferred to the target substrate 1, the LED epitaxial film can be etched by the panel manufacturer using the panel production equipment and process. On the one hand, it saves the need to upgrade the traditional LED chip preparation equipment and environmental transformation, saving equipment investment and production costs; , so that large-area batch processing can be achieved, the processing accuracy is higher, and a finer LED die size can be achieved. In the case where the light-emitting panel 01 is a display panel, a display product with higher resolution or higher pixel density (pixels per inch, PPI) can be produced.

The specific implementation manner of the above-mentioned target substrate 1 will be exemplified below.

In a first possible implementation manner, as shown in FIG. 2 a , FIG. 2 b and FIG. 2 c , the above-mentioned target substrate 1 is a base substrate. The base substrate is, for example, a glass substrate. The driving circuit is disposed on the LED die 2 , and the first electrode 24 is in contact with the surface of the first semiconductor layer 21 away from the target substrate 1 .

In the embodiments of the present application, A is on B, which does not mean that the positional relationship between A and B is that A is above B, but only means that when manufacturing, B is manufactured first, and then A is manufactured. For example, the driving circuit is arranged on the LED die 2, which means that the LED die 2 is fabricated first, and then the driving circuit is fabricated.

In this possible implementation manner, in order to be able to control the LED die 2 to emit light, in some embodiments of the present application, as shown in FIGS. The second electrode 25 on the second electrode 25 is in contact with the surface of the second semiconductor layer 23 away from the target substrate 1 . In this embodiment of the present application, a first insulating layer 4 may be disposed between the LED die 2 and the first electrode 24 and the second electrode 25 , and the first insulating layer 4 may be used to protect the LED die 2 . The first electrode 24 passes through the A via hole in the insulating layer 4 is in contact with the first semiconductor layer 21 , and the second electrode 25 is in contact with the second semiconductor layer 23 through the via hole in the first insulating layer 4 .

Here, in some examples, as shown in FIG. 2 c , the first electrode 24 is disposed in the same layer as the drain electrode 31 or the source electrode 31 . The "same layer" in this application refers to a layer structure formed by using the same film forming process to form a film layer for forming a specific pattern, and then using the same mask to form a layer structure through a single patterning process. Depending on the specific pattern, the same patterning process may include multiple exposure, development or etching processes, and the specific patterns in the formed layer structure may be continuous or discontinuous, and these specific patterns may also be at different heights Or have different thicknesses. In other examples, as shown in FIG. 2a, the first electrode 24 is close to the base substrate 11 relative to the drain electrode 31 or the source electrode 31 in contact therewith, that is, the first electrode 24 is formed first, and then the drain electrode 31 or the source electrode is formed 31, or, as shown in FIG. 2b, the first electrode 24 is far from the base substrate 11 relative to the drain electrode 31 or the source electrode 31 in contact therewith, that is, the drain electrode 31 or the source electrode 31 is formed first, and then the first electrode 24 is formed. In this case, as shown in FIG. 2 a and FIG. 2 b , a second insulating layer 5 is provided between the driving circuit and the first electrode 24 and the second electrode 25 , and the first electrode 24 passes through the via hole on the second insulating layer 5 In contact with the drain electrode 31 or the source electrode 31 of the transistor in the driving circuit, the second electrode 25 is in contact with the second semiconductor layer 23 in the LED die 2 through the via hole on the second insulating layer 5 . In this example, the first electrode 24 may be disposed in the same layer as other conductive layers. For example, the first electrode 24 may be disposed in the same layer as the gate of the transistor in the driving circuit.

In a second possible implementation manner, as shown in FIG. 3 , the above-mentioned target substrate 1 includes a base substrate 11 and a plurality of driving circuits arranged on the base substrate 11 and distributed in an array.

In this possible implementation, in order to control the LED die 2 to emit light, as shown in FIG. 3 , the light-emitting panel 01 further includes a second electrode 25 disposed on the LED die 2; the second electrode 25 and the second semiconductor layer 23 is in contact with the surface away from the target substrate 1; wherein, the first electrode 24 is in contact with the surface of the first semiconductor layer 21 away from the target substrate 1, and the first electrode 24 is away from the base substrate 11 relative to the drain electrode 31 or the source electrode 31 in contact with it. . Here, a first insulating layer 4 can be provided between the LED die 2, the driving circuit and the first electrode 24 and the second electrode 25. The first insulating layer 4 can be used to protect the LED die 2 and the driving circuit. The electrode 24 is in contact with the drain electrode 31 or the source electrode 31 of the transistor in the driving circuit through the via hole in the first insulating layer 4 , and the second electrode 25 is in contact with the second semiconductor layer 23 through the via hole in the first insulating layer 4 .

In a third possible implementation manner, as shown in FIG. 4 , the above-mentioned target substrate 1 includes a base substrate 11 , a plurality of driving circuits arranged on the base substrate 11 and distributed in an array, and a common electrode layer 6 .

In this possible implementation, in order to control the LED die 2 to emit light, the light-emitting panel 01 further includes a second electrode 25 disposed on the LED die 2 ; the second electrode 25 and the second semiconductor layer 23 are far from the target substrate 1 . The surface is in contact with the common electrode layer 6; wherein, the first electrode 24 is in contact with the surface of the first semiconductor layer 21 away from the target substrate 1, and the first electrode 24 is far away from the substrate relative to the drain electrode 31 or the source electrode 31 in contact with it. On the substrate 11 , the common electrode layer 6 is close to the base substrate 11 relative to the second electrode 25 . Here, a first insulating layer 4 can be provided between the LED die 2, the driving circuit, the common electrode layer 6, the first electrode 24, the second electrode 25, and the first insulating layer 4 can be used to protect the LED die 2, The driving circuit and the common electrode layer 6, the first electrode 24 is in contact with the drain electrode 31 or the source electrode 31 of the transistor in the driving circuit through the via hole on the first insulating layer 4, and the second electrode 25 is in contact with the drain electrode 31 or the source electrode 31 of the transistor in the driving circuit through the via hole on the first insulating layer 4. The holes are in contact with the second semiconductor layer 23 .

In the above-mentioned first, second and third possible implementation manners, the first electrode 24 and the second electrode 25 may be arranged in the same layer, that is, the first electrode 24 and the second electrode 25 are formed simultaneously through one patterning process Alternatively, different layers may be arranged, that is, the first electrode 24 is formed first, and then the second electrode 25 is formed, or the second electrode 25 is formed first, and then the first electrode 24 is formed.

In the above-mentioned first and second possible implementation manners, one second electrode 25 corresponds to one LED die 2 , and a plurality of the above-mentioned second electrodes 25 may be electrically connected together (equivalent to the common electrode layer 6 ). The plurality of second electrodes 25 can be electrically connected together to form a grid electrode, for example. When the first electrode 24 and the second electrode 25 are disposed in different layers, the plurality of second electrodes 25 can be electrically connected together, for example, to form a planar electrode. In this case, an insulating layer is provided between the first electrode 24 and the second electrode 25, and the second electrode 24 is in contact with the second semiconductor layer 23 through a via hole on the insulating layer.

In a fourth possible implementation manner, as shown in FIG. 5 , the above-mentioned target substrate 1 includes a base substrate 11 , a plurality of driving circuits arranged on the base substrate 11 and distributed in an array, and drains of transistors in the driving circuit 31 or the first electrode 24 to which the source electrode 31 contacts. The first electrode 24 is in contact with the surface of the first semiconductor layer 21 close to the target substrate 1 . Here, the first insulating layer 4 may be provided between the driving circuit and the first electrode 24 .

In this possible implementation, in order to control the LED die 2 to emit light, the light-emitting panel 01 further includes a common electrode layer 6 disposed on the side of the second semiconductor layer 23 away from the base substrate 11 . The common electrode layer 6 is connected to the second semiconductor layer 23 . The layer 23 is in contact away from the surface of the target substrate 1 .

Here, a second insulating layer 5 may be disposed between the common electrode layer 6 and the LED die 2 , and the common electrode layer 6 is in contact with the second semiconductor layer 23 through via holes on the second insulating layer 5 . The second insulating layer 5 can be used to protect the LED die 2 .

In a fifth possible implementation manner, as shown in FIG. 6 , the above-mentioned target substrate 1 includes a base substrate 11 , a plurality of driving circuits arranged on the base substrate 11 and distributed in an array, and drains 31 of transistors in the driving circuit Or the first electrode 24 and the common electrode layer 6 in contact with the source electrode 31 ; the first electrode 24 is in contact with the first semiconductor layer 21 close to the surface of the target substrate 1 .

In this possible implementation, in order to control the LED die 2 to emit light, the light-emitting panel 01 includes a second electrode 25 disposed on the target substrate 1 ; the second electrode 25 and the second semiconductor layer 23 are respectively away from the surface of the target substrate 1 . contact with the common electrode layer 6 .

Here, the first insulating layer 4 may be disposed between the driving circuit and the first electrode 24, and the first electrode 24 is in contact with the drain electrode 31 or the source electrode 31 of the transistor in the driving circuit through the via hole on the first insulating layer 4 . In addition, a second insulating layer 5 can also be provided between the second electrode 25 and the LED die 2 , the driving circuit, the first electrode 24 , and the common electrode layer 6 , and the second insulating layer 5 can be used to protect the LED die 2 .

In the above-mentioned second, third, fourth and fifth possible implementation manners, it should be understood that since the target substrate 1 includes a driving circuit and the LED die 2 is disposed on the target substrate 1, the LED die The die 2 is arranged on the driving circuit 1, that is, the driving circuit 1 is first fabricated, and then the LED die 2 is fabricated. In other embodiments of the present application, the main structure of the light emitting panel 01 includes a target substrate 1 and a plurality of LED dies 2 disposed on the target substrate 1 . The LED die 2 includes a first semiconductor layer 21 , a light emitting layer 22 and a second semiconductor layer 23 sequentially stacked on the target substrate 1 , and the first semiconductor layer 21 and the second semiconductor layer 23 have different doping types. The light emitting panel 01 further includes a first electrode 24 in contact with the first semiconductor layer 21 .

In some examples, as shown in FIG. 7 , the aforementioned target substrate 1 includes a base substrate 11 and a first electrode 24 disposed on the base substrate 11 . Since the LED die 2 is disposed on the target substrate 1 , the surface of the first semiconductor layer 21 close to the target substrate 1 is in contact with the first electrode 24 . In order to control the LED die 2 to emit light, as shown in FIG. 7 , the light-emitting panel 01 further includes a common electrode layer 6 disposed on the side of the second semiconductor layer 23 away from the base substrate 11 , and the common electrode layer 6 is far away from the second semiconductor layer 23 The surface of the target substrate 1 is in contact.

Here, a first insulating layer 4 may be disposed between the common electrode layer 6 and the LED die 2 , and the common electrode layer 6 is in contact with the second semiconductor layer 23 through via holes on the first insulating layer 4 .

It should be noted that, in the example, if the light-emitting panel 01 is used for lighting or as a backlight source of a liquid crystal display panel, a plurality of first electrodes 24 can also be electrically connected together, wherein one LED die 2 corresponds to one first electrode twenty four.

In other examples, the aforementioned target substrate 1 is the base substrate 11 , and the first electrode 24 is in contact with the surface of the first semiconductor layer 21 away from the target substrate 1 . In order to control the LED die 2 to emit light, the light emitting panel 01 further includes a second electrode 25 disposed on the LED die 2 , and the second electrode 25 is in contact with the surface of the second semiconductor layer 23 away from the target substrate 1 .

In this example, if the light-emitting panel 01 is not used for display, for example, used for illumination or as a backlight source of a liquid crystal display panel, the plurality of first electrodes 24 may be electrically connected together, and the plurality of second electrodes 25 may be electrically connected to Together, one of the first electrodes 24 and one of the second electrodes 25 corresponds to one LED die 2 . If the light-emitting panel 01 is used for display, a plurality of first electrodes 24 can be connected together to form a plurality of parallel strip electrodes, and a plurality of second electrodes 25 can be connected together to form a plurality of parallel strip electrodes. electrodes, and a plurality of parallel-arranged strip electrodes formed by a plurality of first electrodes 24 intersect with a plurality of parallel-arranged strip electrodes formed by a plurality of second electrodes 25 . A plurality of second electrodes 25 may also be electrically connected together, and a plurality of first electrodes 24 are independent of each other, wherein one first electrode 24 and one second electrode 25 correspond to one LED die 2 .

Based on the above, in some embodiments, the first electrode 24 is an anode, and the second electrode 25 or the common electrode layer 6 is a cathode. In this case, the plurality of LED chips 2 share a common cathode. In other embodiments, the first electrode 24 is a cathode, and the second electrode 25 or the common electrode layer 6 is an anode. In this case, the plurality of LED chips 2 share a common anode. In addition, the above-mentioned LED die 2 , the first electrode 24 in contact with the first semiconductor layer 21 of the LED die 2 , and the second electrode 25 or the common electrode layer 6 in contact with the second semiconductor layer 23 of the LED die 2 The LED chips (also referred to as LED particles) are formed.

The transistor in the above-mentioned driving circuit may be a thin film transistor (TFT), in this case, the driving circuit may also be called a TFT driving circuit; the transistor in the driving circuit may also be a MOS (metal oxide semiconductor) tube, MOS The tube may be a PMOS tube or an NMOS tube. Here, a MOS tube may be fabricated using a COMS (complementary metal oxide semiconductor) process. In this case, the drive circuit may also be called a CMOS drive circuit. Hereinafter, the above-mentioned driving circuit will be described by taking the light-emitting panel 01 as a display panel as an example.

As shown in FIG. 8 , the display panel includes an active display area (AA) 100 and a non-display area 101 located around the active display area 100 . The active display area 100 includes a plurality of sub pixels 02 .

In some embodiments of the present application, the above-mentioned plurality of sub-pixels 02 are arranged in a matrix form. In FIG. 8 , the plurality of sub-pixels 02 arranged in a row along the horizontal direction X are sub-pixels in the same row, and the plurality of sub-pixels 02 arranged in a row along the vertical direction Y are called sub-pixels in the same column. Each sub-pixel 02 in the effective display area 100 is provided with an LED die 2 and a driving circuit 3 for driving the LED die 2 to emit light. The driving circuits 3 in the sub-pixels 02 in the same row are electrically connected to the same scan line SCAN, and the driving circuits 3 in the sub-pixels 02 in the same column are electrically connected to the same data line DL.

Specifically, as shown in FIG. 9, a schematic diagram of a driving circuit 3 is provided, which includes a first MOS transistor M1 and a second MOS transistor M2, wherein the gate g of M1 is connected to the scan line SCAN, and the source s of M1 is connected to The data line DL, the drain d of M1 is connected to the gate g of M2, and the drain d of M2 is connected to the power supply VDD through the LED chip (wherein, the second electrode 24 of the LED chip is connected to VDD, and the first electrode of the LED chip is connected to the drain of M2. The power supply VDD provides a high level VH, the source s of M2 is connected to the ground VEE, the ground VEE provides a low level VL, and a capacitor Cst is connected between the source s and the gate g of M2. In this way, usually when the pixel is addressed by the scan line SCAN, the data voltage (Vdata) is applied to the LED chip through M2, and the M2 generates a current (Idata) that flows through the LED chip to emit light. The above description is given by taking the common anode connection mode of the LED chip as an example, wherein M2 is an NMOS transistor. When M2 uses a PMOS tube, in order to ensure the stability of the source voltage of M2 and avoid the problem of source voltage floating, which affects the instability of the gate-source (gs) voltage of M2, usually the source s of M2 is connected to VDD, and the LED chip is connected. Between VEE and the drain d of M2 (wherein, the first electrode of the LED chip is connected to the drain of M2, and the second electrode of the LED chip is connected to VEE), so that the LED chips realize a common cathode connection. FIG. 9 is only an example of a driving circuit 3 , and those skilled in the art can also replace the driving circuit 3 shown in FIG. 9 with other forms of driving circuits.

In other embodiments of the present application, as shown in FIG. 10 , the effective display area 100 generally includes pixels 03 arranged in an array. In FIG. 10 , the pixel 03 includes three sub-pixels R (red, red), G (green, green) and B (blue, blue) as an example for illustration, and each sub-pixel 02 includes an LED chip. Wherein, as shown in FIG. 10 , the effective display area 100 further includes: driving circuits 3 arranged in an array, wherein a plurality of pixels 03 are distributed around any driving circuit 3 (wherein, four are used as an example for description in FIG. 10 ) . The driving circuit 3 includes a plurality of pixel driving circuits, and the pixel driving circuits are connected to the LED chips to drive the connected LED chips to emit light.

Specifically, as shown in FIG. 11 , the driving circuit 3 internally includes an analog circuit part 32 and a digital circuit part 33 . For a pixel composed of sub-pixels of three primary colors of RGB, and four pixels 03 are distributed around the driving circuit 3, the analog circuit part 32 includes 12 pixel driving circuits. Referring to FIG. 12, the pixel driving circuit is usually composed of a current source 71 and a gate switch 72. The current source 71 is connected to the LED chip (D1 in FIG. 12) through the gate switch 72, and each pixel driving circuit is a sub- The pixel's LED chip is powered. Externally, the digital circuit part 33 is controlled by the timing control chip to generate a gating signal (usually a PWM signal) for the gating switch 72 and a bias signal (Vbias) of the current source, and the gating of the output of the current source 71 is realized through the gating signal. (equivalent to selecting the pixel address by scanning lines in the above-mentioned display panel), and at the same time controlling the output power of the current source 71 through the bias signal (equivalent to using the data voltage (Vdata) to drive the transistor to generate the current (Idata) in the above-mentioned display panel) ), so as to realize the lighting control of the corresponding LED chip.

As shown in FIG. 12, a schematic diagram of a pixel driving circuit is provided, including MOS transistors M1, M2 and M3, wherein M1 is used as a gate switch and is connected in series between a current source 71 and an LED chip, and the current source 71 includes two series-connected MOS transistors M2 and M3, where the gate of M1 is used to receive the strobe signal, the source of M1 is connected to the drain of M2, the drain of M1 is connected to the power supply VDD through D1 (wherein the first electrode of D1 is connected to VDD, the first The two electrodes are connected to the drain of M1). The gate of M2 is connected to the gate of M3 for receiving a bias signal, the source of M2 is connected to the drain of M3, and the source of M3 is connected to ground VEE. In addition, the above current source is described by taking the series-connected MOS transistors M2 and M3 as an example. In some examples, the current source may only include one MOS transistor M2. At this time, the source of M2 is directly connected to ground VEE; of course, the current source can also be Including 3 or more MOS tubes connected in series. The above description is given by taking the common anode connection mode of LED chips as an example, and M1, M2 and M3 in FIG. 12 are NMOS. When using PMOS, it is necessary to connect D1 with a common cathode connection. FIG. 12 is only an example of a pixel driving circuit, and those skilled in the art can also replace the pixel driving circuit shown in FIG. 12 with other forms of pixel driving circuits.

It should be noted that the light-emitting layer 22 in the above-mentioned LED die 2 can emit visible light to the human eye, such as red light, green light, blue light or yellow light, etc., or can emit invisible light to the human eye, such as ultraviolet light or infrared light. When the light-emitting panel is used as a Micro LED display panel, in some embodiments, the light-emitting panel 01 includes the LED die 2 for emitting the first primary color light, the LED die 2 for emitting the second primary color light, and the LED die 2 for emitting the second primary color light. LED die 2 that emits light of the third primary color. The first primary color light, the second primary color light and the third primary color light may be, for example, red light, green light and blue light.

The embodiments of the present application further provide a method for manufacturing the light-emitting panel 01 , which can be used to manufacture the above-mentioned light-emitting panel 01 . As shown in FIG. 13 , the preparation method of the light-emitting panel 01 includes:

S10 , as shown in FIG. 14 , transfer the light emitting diode LED epitaxial thin film 8 onto the target substrate 1 .

The LED epitaxial thin film 8 includes a first semiconductor thin film 81 , a light emitting thin film 82 and a second semiconductor thin film 83 that are stacked in sequence; the first semiconductor thin film 81 and the second semiconductor thin film 83 have different doping types. Here, for the different doping types of the first semiconductor thin film 81 and the second semiconductor thin film 83, reference may be made to the above explanation of the different doping types of the first semiconductor layer 21 and the second semiconductor layer 23, which will not be repeated here.

On this basis, before transferring the LED epitaxial thin film 8 to the target substrate 1 , the preparation method of the light emitting panel 01 further includes: peeling the LED epitaxial thin film 8 from the substrate on which it is grown.

An example of how to peel the LED epitaxial thin film 8 from the substrate on which it is grown is as follows. For example, the substrate can be separated from the LED epitaxial thin film 8 by irradiating the substrate with a laser to separate the substrate from the first semiconductor thin film 81 or the second semiconductor thin film 83 in contact therewith. For another example, before growing the LED epitaxial film 8 on the substrate, a sacrificial layer is first formed on the substrate, and then the LED epitaxial film 8 is grown on the sacrificial layer. The layers are destroyed, thereby separating the substrate and the LED epitaxial film 8 . After the substrate and the LED epitaxial film 8 are separated, the transfer device adsorbs the LED epitaxial film 8 , so that the LED epitaxial film 8 can be transferred from the substrate to the target substrate 1 .

S11. As shown in FIG. 15, pattern the LED epitaxial film 8 to form a plurality of LED die 2; Semiconductor layer 23 . The doping types of the first semiconductor layer 21 and the second semiconductor layer 23 are different. The first semiconductor layer 21 is obtained by patterning the first semiconductor film 81 , the light-emitting layer 22 is obtained by patterning the light-emitting film 82 , and the second semiconductor layer 23 is obtained by patterning the second semiconductor film 83 of.

Here, patterning includes photoresist coating, mask exposure, development, and etching processes.

On this basis, patterning the LED epitaxial film 8 , that is, patterning the first semiconductor film 81 , the light-emitting film 82 and the second semiconductor film 83 , the first semiconductor film 81 , the light-emitting film 82 and the second semiconductor film 83 Patterning is carried out by one patterning process; two layers (such as the light-emitting film 82 and the second semiconductor film 83) can also be patterned first, and then another layer (such as the first semiconductor film 81) can be patterned; of course, the first semiconductor film 81 can also be patterned. A semiconductor thin film 81 , a light emitting thin film 82 and a second semiconductor thin film 83 are patterned respectively, that is, the LED epitaxial thin film 8 is patterned through three patterning processes.

The embodiment of the present application provides a method for fabricating a light-emitting panel. First, the LED epitaxial film 8 is moved onto the target substrate 1 , and then the LED epitaxial film 8 is patterned to form a plurality of LED die 2 . Compared with the prior art, a plurality of LED chips are formed first, and then the plurality of LED chips are transferred to the target substrate 1 for multiple times to form a Micro LED display panel. Since the embodiment of the present application is to transfer the LED epitaxial film 8 to the target substrate 1 as a whole. Therefore, the transfer time can be reduced, the transfer efficiency can be improved, and the production cost can be reduced. On this basis, compared with the prior art, the transfer device needs to be in contact with each LED chip when transferring the LED chips. In the embodiment of the present application, when transferring the LED epitaxial film 8 The area of the die 2 and the area not used to form the LED die 2, so when the transfer device transfers the LED epitaxial film 8, the transfer device can contact the area of the LED epitaxial film 8 that is not used to form the LED die 2, or reduce the contact with the LED epitaxial film 8. In the LED epitaxial film 8, the contact area of the area used to form the LED die 2 can reduce the damage of the LED die 2 during the transfer process, reduce the risk, reduce the later detection and repair work of the LED die 2, and improve the Production efficiency, reduce production costs.

On this basis, in the prior art, during the preparation of LED chips, the LED epitaxial films are etched and the electrodes are fabricated by traditional LED chip manufacturers using equipment and processes for preparing LED chips. And when LED chips are used in Micro LED display panels, when making LED chips, it is necessary to upgrade the traditional equipment for preparing LED chips and make environmental modifications, which increases production costs. In the embodiment of the present application, after the LED epitaxial film 8 is transferred to the target substrate 1, the LED epitaxial film can be etched by the panel manufacturer using the panel production equipment and process. On the one hand, it saves the need to upgrade the traditional LED chip preparation equipment and environmental transformation, saving equipment investment and production costs; , so that large-area batch processing can be achieved, the processing accuracy is higher, and a finer LED die size can be achieved. In the case where the light-emitting panel 01 is a display panel, display products with higher resolution or higher pixel density can be produced.

The specific implementation of the method for manufacturing the light-emitting panel 01 when different forms of the target substrate 1 are used will be illustrated below.

In an optional embodiment, the target substrate 1 is a base substrate 11. For example, manufacturing a light-emitting panel 01 as shown in FIG. 2a specifically includes the following steps:

S20 , transferring the light-emitting diode LED epitaxial thin film 8 onto the target substrate 1 .

The LED epitaxial thin film 8 includes a first semiconductor thin film 81 , a light emitting thin film 82 and a second semiconductor thin film 83 that are stacked in sequence; the first semiconductor thin film 81 and the second semiconductor thin film 83 have different doping types.

Here, for the specific implementation of this step, reference may be made to step S10 in FIG. 13 above.

S21 , patterning the LED epitaxial thin film 8 to form a plurality of LED die 2 .

Wherein, the LED die 2 includes a first semiconductor layer 21 , a light emitting layer 22 and a second semiconductor layer 23 which are sequentially stacked on the target substrate 1 .

Here, for the specific implementation of this step, reference may be made to step S11 in FIG. 13 above.

S22 , forming a first insulating layer 4 on the LED die 2 . Among them, the first insulating layer 4 is formed with via holes for contacting with the first semiconductor layer 21 and via holes for contacting with the second semiconductor layer 23 .

It should be noted that this step is an optional step, and may be omitted, for example, in some embodiments.

S23 , forming a first electrode 24 and a second electrode 25 on the first insulating layer 4 . The first electrode 24 is in contact with the surface of the first semiconductor layer 21 away from the target substrate 1 through the via hole in the first insulating layer 4 , and the second electrode 25 is in contact with the second semiconductor layer 23 away from the target through the via hole in the first insulating layer 4 The surface of the substrate 1 is in contact.

Here, the first electrode 24 and the second electrode 25 can be formed simultaneously, that is, a conductive layer is formed, and the first electrode 24 and the second electrode 25 are simultaneously formed on the conductive layer through a patterning process; the first electrode can also be formed first 24, and then form the second electrode 25, or first form the second electrode 25, and then form the first electrode 24, that is, form a first conductive layer, pattern the first conductive layer to form the first electrode 24; form the second conductive layer , the second conductive layer is patterned to form a second electrode 25 . One second electrode 25 corresponds to one LED die 2 , and a plurality of the second electrodes 25 can be electrically connected together (equivalent to the common electrode layer 6 ). The plurality of second electrodes 25 can be electrically connected together to form a grid electrode, for example. In the case where the first electrode 24 and the second electrode 25 are formed in steps, the plurality of second electrodes 25 can be electrically connected together, for example, to form a planar electrode. In this case, an insulating layer is provided between the first electrode 24 and the second electrode 25, and the second electrode 24 is in contact with the second semiconductor layer 23 through a via hole on the insulating layer.

In addition, the first electrode 24 may be formed in synchronization with other conductive layers, for example, the first electrode 24 may be formed in synchronization with the gate of the transistor in the driving circuit 3 .

S24 , forming the second insulating layer 5 on the first electrode 24 and the second electrode 25 .

S25 , forming the drain electrode 31 and the source electrode 31 of the transistor in the driving circuit 3 on the second insulating layer 5 , and the drain electrode 31 or the source electrode 31 of the transistor in the driving circuit 3 is connected to the first Electrodes 24 are electrically connected.

It should be understood that the first electrode 24 is electrically connected to the drain electrode 31 or the source electrode 31 of the transistor in the driving circuit 3 through the via hole on the second insulating layer 5, which is specifically related to whether the transistor is a P-type transistor or an N-type transistor, and can refer to The foregoing embodiments are not repeated here.

After the above-mentioned S20, S21 and S22, the light-emitting panel 01 shown in FIG. 2b can also be fabricated by referring to the following steps.

S26 , forming the drain electrode 31 and the source electrode 31 of the transistor in the driving circuit 3 on the first insulating layer 4 .

S27 , forming a second insulating layer 5 on the drain electrode 31 and the source electrode 31 of the transistor in the driving circuit 3 . The second insulating layer 5 is formed with a via hole for contacting the first semiconductor layer 21 , a via hole for contacting with the second semiconductor layer 23 , and a drain 31 or source for the transistor in the driving circuit 3 . 31 Vias for electrical connection.

S28 , forming the first electrode 24 and the second electrode 25 on the second insulating layer 5 . The first electrode 24 is in contact with the first semiconductor layer 21 through the via holes on the first insulating layer 4 and the second insulating layer 5 , and the second electrode 25 is in contact with the first semiconductor layer 21 through the via holes on the first insulating layer 4 and the second insulating layer 5 . The two semiconductor layers 23 are in contact with each other. The first electrode 24 is also electrically connected to the drain electrode 31 or the source electrode 31 of the transistor in the driving circuit 3 through the via hole on the second insulating layer 5 .

Here, for the specific implementation of this step, reference may be made to the foregoing step S23.

In addition, the first electrode 24 may be formed in synchronization with other conductive layers, for example, the first electrode 24 may be formed in synchronization with the gate of a transistor in the driving circuit.

After the above-mentioned S20, S21 and S22, the light-emitting panel 01 shown in FIG. 2c may also be fabricated by referring to the following steps.

S29. On the first insulating layer 4, the drain electrode 31 and the source electrode 31, the first electrode 24 and the second electrode 25 of the transistor in the driving circuit 3 are formed; The first electrodes 24 are formed simultaneously and are electrically connected. The first electrode 24 is in contact with the surface of the first semiconductor layer 21 away from the base substrate 11 , and the second electrode 25 is in contact with the surface of the second semiconductor layer 23 away from the base substrate 11 .

Here, the first electrode 24 and the second electrode 25 may be formed simultaneously, or may be formed in steps, for details, please refer to the explanation in the above step S23.

Based on the foregoing optional embodiments, in the case where the light emitting panel 01 does not include a driving circuit, the steps of preparing the light emitting panel 01 may include S20, S21, S22 and S23, wherein S22 is an optional step. On this basis, if the light-emitting panel 01 is not used for display, for example, used for illumination or as a backlight source of a liquid crystal display panel, the plurality of first electrodes 24 can be electrically connected together, and the plurality of second electrodes 25 can be electrically connected to Together, one of the first electrodes 24 and one of the second electrodes 25 corresponds to one LED die 2 . If the light-emitting panel 01 is used for display, in some embodiments, a plurality of first electrodes 24 may be connected together to form a plurality of parallel strip electrodes, and a plurality of second electrodes 25 may be connected together to form a plurality of parallel electrodes Arranged strip electrodes. In other embodiments, the plurality of second electrodes 25 are electrically connected together, and the plurality of first electrodes 24 are independent of each other, wherein one first electrode 24 and one second electrode 25 correspond to one LED die 2 .

In another optional embodiment, the above-mentioned target substrate 1 includes a base substrate 11 and a plurality of driving circuits 3 arranged on the base substrate 11 and distributed in an array. For example, a light-emitting panel as shown in FIG. 3 is fabricated, which specifically includes the following step:

S30 , transferring the light emitting diode LED epitaxial thin film 8 onto the target substrate 1 .

S31 , patterning the LED epitaxial thin film 8 to form a plurality of LED die 2 .

S32 , forming a first insulating layer 4 on the LED die 2 . The first insulating layer 4 is formed with a via hole for contact with the first semiconductor layer 21, a via hole for contact with the second semiconductor layer 23, and an electrical connection with the drain electrode 31 or the source electrode 31 of the transistor in the driving circuit. vias.

S33 , forming the first electrode 24 and the common electrode layer 6 on the first insulating layer 4 ; the first electrode 24 is in contact with the first semiconductor layer 21 through the via hole on the first insulating layer 4 , The via hole is electrically connected to the drain electrode 31 or the source electrode 31 of the transistor in the driving circuit 3 , and the common electrode layer 6 is in contact with the second semiconductor layer 23 through the via hole on the first insulating layer 4 .

It should be noted that the first electrode 24 and the common electrode layer 6 can be formed simultaneously. In this case, the common electrode layer 6 can be, for example, a grid electrode; the first electrode 24 can also be formed first, and then the common electrode layer 6 can be formed. , or, the common electrode layer 6 is formed first, and then the first electrode 24 is formed. In this case, an insulating layer is formed between the common electrode layer 6 and the first electrode 24, and the common electrode layer 6 is connected with the via hole on the insulating layer. The second semiconductor layer 23 is in contact, and the common electrode layer 6 can be, for example, a planar electrode or a grid electrode.

In another optional embodiment, the above-mentioned target substrate 1 includes a base substrate 11 , a plurality of driving circuits 3 and a common electrode layer 6 arranged in an array on the base substrate 11 . panel, which includes the following steps:

S40 , transferring the light emitting diode LED epitaxial thin film 8 onto the target substrate 1 .

S41 , patterning the LED epitaxial thin film 8 to form a plurality of LED die 2 .

S42 , forming a first insulating layer 4 on the LED die 2 . The first insulating layer 4 is formed with a via hole for contact with the first semiconductor layer 21, a via hole for contact with the second semiconductor layer 23, and an electrical connection with the drain 31 or the source 31 of the transistor in the driving circuit. and a via hole for contacting the common electrode layer 6 .

S43, the first electrode 24 and the second electrode 25 are formed on the first insulating layer 4; the first electrode 24 is in contact with the first semiconductor layer 21 through the via hole on the first insulating layer 4, and passes through the The via holes on the first insulating layer 4 are electrically connected to the driving circuit 3 ; the second electrode 25 is in contact with the second semiconductor layer 23 and the common electrode layer 6 respectively through the via holes on the first insulating layer 4 .

It should be noted that the first electrode 24 and the second electrode 25 may be formed simultaneously, or the first electrode 24 may be formed first, and then the second electrode 25 may be formed, or the second electrode 25 may be formed first, and then the first electrode 24 may be formed.

In another optional embodiment, the above-mentioned target substrate 1 includes a base substrate 11, a plurality of driving circuits 3 arranged on the base substrate 11 and distributed in an array, and a first electrode 24 electrically connected to the driving circuit 3, wherein, A first insulating layer 4 is disposed between the driving circuit 3 and the first electrode 24, and the first electrode 24 is electrically connected to the drain electrode 31 or the source electrode 31 of the driving circuit 3 through the via hole on the first insulating layer 4. The light-emitting panel 01 shown in FIG. 5 specifically includes the following steps:

S50 , transferring the light emitting diode LED epitaxial thin film 8 onto the target substrate 1 .

S51 , patterning the LED epitaxial thin film 8 to form a plurality of LED die 2 .

Wherein, the LED die 2 includes a first semiconductor layer 21 , a light emitting layer 22 and a second semiconductor layer 23 which are sequentially stacked on the target substrate 1 . The first semiconductor layer 23 in the LED die 2 is in contact with the first electrode 24 .

S52 , forming a second insulating layer 5 on the LED die 2 , and forming a via hole in contact with the second semiconductor layer 23 on the second insulating layer 5 .

S53 , forming the common electrode layer 6 on the second insulating layer 5 ; the common electrode layer 6 is in contact with the second semiconductor layer 23 through the via hole on the second insulating layer 5 .

In another optional embodiment, the above-mentioned target substrate 1 includes a base substrate 11, a plurality of driving circuits 3 arranged on the base substrate 11 and distributed in an array, and a first electrode 24 electrically connected to the driving circuit 3; the target substrate 1 further includes a common electrode layer 6 arranged on the base substrate 11, wherein a first insulating layer 4 may be arranged between the driving circuit 3 and the first electrode 24, and the first electrode 24 passes through the crossover on the first insulating layer 4. The hole is electrically connected to the drain electrode 31 or the source electrode 31 of the driving circuit 3. For example, manufacturing a light-emitting panel as shown in FIG. 6 specifically includes the following steps:

S60 , transferring the light-emitting diode LED epitaxial thin film 8 onto the target substrate 1 .

S61 , patterning the LED epitaxial thin film 8 to form a plurality of LED die 2 .

S62 , forming a second insulating layer 5 on the LED die 2 , and forming a via hole in contact with the common electrode layer 6 and a via hole in contact with the second semiconductor layer 23 on the second insulating layer 5 .

S63 , forming the second electrode 25 on the second insulating layer 5 ; the second electrode 25 is in contact with the second semiconductor layer 23 and the common electrode layer 6 respectively through the via holes on the second insulating layer 5 .

In another optional embodiment, the above-mentioned target substrate 1 includes a base substrate 11 and a first electrode 24 disposed on the base substrate 11 . For example, making a light-emitting panel as shown in FIG. 7 specifically includes the following steps:

S70 , transferring the light emitting diode LED epitaxial thin film 8 onto the target substrate 1 .

The LED epitaxial thin film 8 includes a first semiconductor thin film 81, a light emitting thin film 82 and a second semiconductor thin film 83 stacked in sequence; the doping types of the first semiconductor thin film 81 and the second semiconductor thin film 83 are different.

S71 , patterning the LED epitaxial thin film 8 to form a plurality of LED die 2 .

S72 , forming a first insulating layer 4 on the LED die 2 , and forming a via hole in contact with the second semiconductor layer 23 on the first insulating layer 4 .

S73 , forming a common electrode layer 6 on the first insulating layer 4 ; the common electrode layer 6 contacts the surface of the second semiconductor layer 23 away from the target substrate 1 through the via holes on the first insulating layer 4 .

It should be noted that, if the light-emitting panel 01 is used for lighting or as a backlight source of a liquid crystal display panel, a plurality of first electrodes 24 may also be electrically connected together, wherein one LED die 2 corresponds to one first electrode 24 .

Based on the above-mentioned preparation method of the light-emitting panel 01 , when preparing the light-emitting panel 01 , the LED epitaxial film 8 is transferred relative to the target substrate 1 formed with the plurality of driving circuits 3 distributed in an array, and the LED epitaxial film 8 is patterned to form a plurality of For the LED die 2 , the LED epitaxial film 8 is firstly transferred on the base substrate 11 , and the LED epitaxial film 8 is patterned to form a plurality of LED die 2 , and then drives corresponding to the plurality of LED die 2 are formed one-to-one. Circuit 3, in this way, the requirements for the transfer accuracy of the LED epitaxial film 8 will be further reduced, the margin (fluctuation) of the process production will be further increased, the yield rate will be further improved, the production efficiency will be improved, and the production cost will be reduced.

It should be understood that due to the high luminous efficiency and brightness of the LED die 2, the pixel aperture ratio can be made larger. Therefore, whether the LED die 2 is formed first, and then the driving circuit 3 and/or the common electrode layer 6 are formed, Even if the driving circuit 3 and/or the common electrode layer 6 are formed first, and then the LED die 2 is formed, the normal light emission of the LED die 2 will not be affected.

In the prior art, when a plurality of LED chips are transferred to a target substrate 1 formed with a plurality of driving circuits 3 distributed in an array by mass transfer technology, the plurality of LED chips need to be one-to-one with the plurality of driving circuits 3 distributed in an array. Strict and precise alignment, the alignment accuracy needs to be at the μm level, so that the transfer equipment and process requirements are higher, and the accuracy error of multiple transfers is larger. However, in the embodiment of the present application, the LED epitaxial film 8 is transferred to the target substrate, and then the LED epitaxial film 8 is patterned to form a plurality of LED die 2. In the case where the target substrate 1 includes a plurality of driving circuits 3 distributed in an array , because in the process of patterning the LED epitaxial film 8 , the LED die 2 can be accurately formed at the position corresponding to the driving circuit 3 , thereby ensuring that the driving circuit 3 and the LED die 2 can be accurately aligned. Alternatively, in the case where the target substrate 1 includes the base substrate 11 , after forming the plurality of LED die 2 , since in the process of forming the plurality of driving circuits 3 distributed in an array, it can be precisely ensured that the LED die 2 corresponds to the LED die 2 . The driving circuit 3 is formed at the position of , thereby ensuring that the driving circuit 3 and the LED die 2 can be accurately aligned.

Based on the above, the light-emitting panel 01 is a Micro LED display panel, and the Micro LED display panel includes the LED die 2 for emitting the first primary color light, the LED die 2 for emitting the second primary color light, and the LED die 2 for emitting the third primary color. In the case of the light-emitting LED die 2, when preparing the light-emitting display panel 01, as shown in FIG. 14, the LED epitaxial film 8 for emitting the first primary color light can be transferred to the target substrate 1 first, as shown in FIG. 15. As shown, the LED epitaxial thin film 8 for emitting the first primary color light is then patterned to form a plurality of LED die 2 for emitting the first primary color light.

Next, as shown in FIG. 16, the LED epitaxial film 8 for emitting the second primary color light is transferred to the target substrate 1, and as shown in FIG. 17, the LED epitaxial film 8 for emitting the second primary color light is patterned , forming a plurality of LED chips 2 for emitting the second primary color light.

After that, as shown in FIG. 18, the LED epitaxial film 8 for emitting the third primary color light is transferred to the target substrate 1, and as shown in FIG. 19, the LED epitaxial film 8 for emitting the third primary color light is patterned to form multiple LED chips 2 for emitting the third primary color light, so that a full-color Micro LED display panel can be produced.

It should be noted that, after forming a plurality of LED die 2 for emitting the first primary color light, the first electrode 24 and the second electrode 25 may be formed according to the specific implementation of the target substrate 1 and referring to the method of the light-emitting panel 01 described above. Or the common electrode layer 6; after forming a plurality of LED die 2 for emitting the second primary color light, according to the specific implementation of the target substrate 1, referring to the method of the light-emitting panel 01 described above, the first electrode 24, the second electrode 25 or the Common electrode layer 6; after forming a plurality of LED die 2 for emitting light of the third primary color, according to the specific implementation of the target substrate 1, the first electrode 24, the second electrode 25 or the common electrode is formed with reference to the method of the light-emitting panel 01 described above Layer 6. Alternatively, after forming a plurality of LED die 2 for emitting the first primary color light, a plurality of LED die 2 for emitting the second primary color light, and a plurality of LED die 2 for emitting the third primary color light, according to For the specific implementation of the target substrate 1, refer to the method of the light-emitting panel 01 described above in the LED die 2 for emitting the first primary color light, the LED die 2 for emitting the second primary color light, and the LED for emitting the third primary color light. The first electrode 24, the second electrode 25 or the common electrode layer 6 are uniformly formed on the die 2, so that the first electrode 24, the second electrode 25 or the common electrode layer 6 only need to be fabricated once, which can simplify the preparation of the light-emitting panel method.

Based on the above, it should be noted that, before transferring the LED epitaxial thin film 8 to the target substrate 1, as shown in FIG. The LED epitaxial film 8 is grown by chemical vapor deposition, metal organic compound chemical vapor deposition) process, and the LED epitaxial film 8 includes a first semiconductor film 81, a light-emitting film 82 and a second semiconductor film 83 that are stacked in sequence. In the above-mentioned growth process of the first semiconductor thin film 81 , the light emitting thin film 82 and the second semiconductor thin film 83 , the first semiconductor thin film 81 may be grown first, or the second semiconductor thin film 83 may be grown first, which is not limited.

In some embodiments, the LED epitaxial thin film 8 grown on the substrate 9 can be entirely transferred to the target substrate 1 . In this case, the LED epitaxial thin film 8 is planar. In other embodiments, a partial area in the LED epitaxial thin film 8 may be transferred onto the target substrate 1 .

Exemplarily, the light-emitting panel 01 is a Micro LED display panel, and the Micro LED display panel includes LED die 2 for emitting light of the first primary color, LED die 2 for emitting light of the second primary color, and LED die 2 for emitting light of the third primary color. LED die 2, and a column of LED die 2 for emitting the first primary color light, a column of LED die 2 for emitting the second primary color light, and a column of LED die 2 for emitting the third primary color light are arranged alternately in turn. In this case, when preparing the light-emitting panel 01, taking the LED epitaxial film 8 for emitting the first primary color light as an example, since the LED epitaxial film 8 for emitting the first primary color light is transferred to the target substrate 1 as a whole, When patterning the LED epitaxial film 8 for emitting the first primary color light, in order to leave space for making the LED die 2 for emitting the second primary color light and the third primary color light, it is necessary to use the LED epitaxial film 8 for emitting the first primary color light. Most of the area of the LED epitaxial thin film 8 for light (for example, the area where the LED die 2 for emitting the second primary color light and the third primary color light is to be formed) is etched away, so that the two adjacent columns formed are used for emitting the second primary color light and the third primary color light. The spacing of the LED chips 2 of a primary color is the spacing between two adjacent rows of sub-pixels of the same color, which will result in material waste.

Based on this, in order to save materials, before steps S10 , S20 , S30 , S40 , S50 , S60 and S70 , the preparation method of the light-emitting panel 01 further includes: as shown in FIG. 21 , patterning the LED epitaxial film 8 to form a plurality of The strip-like structures 10 are distributed in parallel. The steps S10, S20, S30, S40, S50, S60 and S70 can also be produced by referring to the following step S80.

S80 , as shown in FIG. 22 , transferring at least one strip structure 10 among the plurality of strip structures 10 distributed in parallel to the target substrate 1 .

In the embodiment of the present application, when patterning the LED epitaxial thin film 8 to form a plurality of strip-like structures 10 distributed in parallel, the gap between two adjacent strip-like structures 10 can be set to be small during the patterning process. The gap between the strip-like structures 10 can be set as the distance between two adjacent columns of sub-pixels, so that the area etched in the LED epitaxial film 8 will be reduced, thereby avoiding material waste and greatly improving the material efficiency. utilization.

It should be understood that the strip-like structures 10 should be selectively transferred during the transfer in S80, and the distance between two adjacent strip-like structures 10 to be transferred each time may be the same as that between two adjacent columns of sub-pixels of the same color. The pitches are the same, that is, two strip structures 10 are spaced between adjacent two strip structures 10 to be transferred, so that multiple strip structures 10 can be transferred to the target substrate 1 through multiple batch transfers.

It should be noted that the above-mentioned partial area of the LED epitaxial film 8 is transferred to the target substrate 1, the "partial area" here includes but not limited to a plurality of strip structures 10, and the "partial area" can also be an LED epitaxial film. 8 in a square area or rectangular area etc.

Based on this, an embodiment of the present application further provides an electronic device, the electronic device includes the above-mentioned light-emitting panel 01, and also includes components such as a printed circuit board (printed circuit board, PCB). Optionally, the electronic device is different types of user equipment or terminal equipment such as a computer, a mobile phone, a tablet computer, a wearable device, and a vehicle-mounted device.

In another aspect of the present application, there is also provided a non-transitory computer-readable storage medium for use with a computer, the computer having software for creating and manufacturing the above-mentioned light-emitting panel 01, and a computer-readable storage medium is stored on the computer-readable storage medium. or more computer readable data structures, one or more computer readable data structures having control data, eg photomask data, for manufacturing the light emitting panel 01 provided by any one of the illustrations provided above.

The above are only specific embodiments of the present application, but the protection scope of the present application is not limited to this, and any changes or substitutions within the technical scope disclosed in the present application should be covered within the protection scope of the present application. . Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims

A method for preparing a light-emitting panel, comprising:

The light-emitting diode LED epitaxial film is transferred to the target substrate; the LED epitaxial film includes a first semiconductor film, a light-emitting film and a second semiconductor film that are stacked in sequence; the first semiconductor film and the second semiconductor film are doped with Different types of miscellaneous;

The LED epitaxial film is patterned to form a plurality of LED crystal grains; the LED crystal grains include a first semiconductor layer, a light-emitting layer and a second semiconductor layer that are sequentially stacked on the target substrate; wherein the first semiconductor layer is A semiconductor layer is obtained by patterning the first semiconductor film, the light-emitting layer is obtained by patterning the light-emitting film, and the second semiconductor layer is obtained by patterning the second semiconductor film owned.
The method according to claim 1, wherein the target substrate is a base substrate; after the forming of the plurality of LED die, the preparation method of the light-emitting panel further comprises:

A first electrode, a second electrode and a driving circuit are formed on the LED die; the first electrode is in contact with the first semiconductor layer and is electrically connected to the driving circuit; the second electrode is connected to the The second semiconductor layer contacts.
The method according to claim 1, wherein the target substrate comprises a base substrate and a plurality of driving circuits arranged on the base substrate and distributed in an array;

After the forming of the plurality of LED dies, the manufacturing method of the light-emitting panel further includes:

A first electrode is formed on the LED die; the first electrode is in contact with the first semiconductor layer and is electrically connected to the driving circuit.
The method according to claim 1, wherein the target substrate comprises a base substrate, a plurality of driving circuits arranged on the base substrate and distributed in an array and a first electrode electrically connected to the driving circuits;

Wherein, the first semiconductor layer is in contact with the first electrode.
The method according to claim 3 or 4, wherein the target substrate further comprises a common electrode layer disposed on the base substrate;

After the forming of the plurality of LED dies, the manufacturing method of the light-emitting panel further includes:

A second electrode is formed on the LED die; the second electrode is in contact with the second semiconductor layer and the common electrode layer, respectively.
The method according to claim 3 or 4, characterized in that, after the forming of the plurality of LED die, the preparation method of the light-emitting panel further comprises:

A common electrode layer is formed on the LED die; the common electrode layer is in contact with the second semiconductor layer.
The method according to any one of claims 2-4, wherein the driving circuit comprises a transistor; the first electrode is electrically connected to a drain or a source of the transistor;

Wherein, the transistor is a thin film transistor or a MOS transistor.
The method according to claim 1, wherein the LED epitaxial film is planar;

Alternatively, before transferring the light-emitting diode LED epitaxial film to the target substrate, the preparation method of the light-emitting panel further includes:

patterning the LED epitaxial thin film to form a plurality of parallel distributed strip structures; transferring the light emitting diode LED epitaxial thin film to the target substrate, comprising: transferring at least one strip structure of the plurality of parallel distributed strip structures The structure is transferred onto the target substrate.
The method of claim 1, wherein the light-emitting layer is used to emit one of three primary colors of light.
A light-emitting panel, characterized in that it includes:

target substrate;

A plurality of LED crystal grains arranged on the target substrate; the LED crystal grains include a first semiconductor layer, a light-emitting layer and a second semiconductor layer sequentially stacked on the target substrate; the first semiconductor layer and The doping types of the second semiconductor layers are different;

The light-emitting panel further includes: a first electrode and a driving circuit; wherein, the first electrode is in contact with the first semiconductor layer and the drain or source of a transistor in the driving circuit, respectively.
The light-emitting panel according to claim 10, wherein the target substrate is a base substrate; the driving circuit is disposed on the LED die; the first electrode and the first semiconductor layer are far away from the the surface contact of the target substrate;

The light-emitting panel further includes a second electrode disposed on the LED die, the second electrode being in contact with a surface of the second semiconductor layer away from the target substrate.
The light-emitting panel according to claim 10, wherein the target substrate comprises a base substrate and a plurality of the driving circuits arranged on the base substrate and distributed in an array;

The light-emitting panel further includes a second electrode disposed on the LED die, the second electrode being in contact with a surface of the second semiconductor layer away from the target substrate;

Wherein, the first electrode is in contact with the surface of the first semiconductor layer away from the target substrate, and the first electrode is away from the base substrate with respect to the drain electrode or the source electrode in contact therewith.
The light-emitting panel according to claim 12, wherein the target substrate further comprises a common electrode layer disposed on the base substrate; and the second electrode is further in contact with the common electrode layer.
The light-emitting panel according to claim 10, wherein the target substrate comprises a base substrate, a plurality of the driving circuits arranged on the base substrate and distributed in an array, and all the transistors in the driving circuit. a first electrode contacting the drain or the source;

the first electrode is in contact with a surface of the first semiconductor layer close to the target substrate;

The light emitting panel further includes a common electrode layer disposed on a side of the second semiconductor layer away from the base substrate, the common electrode layer being in contact with a surface of the second semiconductor layer away from the target substrate.
The light-emitting panel according to claim 10, wherein the target substrate comprises a base substrate, a plurality of the driving circuits arranged on the base substrate and distributed in an array, and all the transistors in the driving circuit. a first electrode and a common electrode layer in contact with the drain or the source;

the first electrode is in contact with a surface of the first semiconductor layer close to the target substrate;

The light emitting panel further includes a second electrode disposed on the target substrate; the second electrode is in contact with the surface of the second semiconductor layer away from the target substrate and the common electrode layer, respectively.
An electronic device, characterized by comprising: the light-emitting panel and the printed circuit board according to any one of claims 10 to 15.