CN114335241A - Flexible gallium arsenide solar cell for space and preparation method - Google Patents
Flexible gallium arsenide solar cell for space and preparation method Download PDFInfo
- Publication number
- CN114335241A CN114335241A CN202111552062.XA CN202111552062A CN114335241A CN 114335241 A CN114335241 A CN 114335241A CN 202111552062 A CN202111552062 A CN 202111552062A CN 114335241 A CN114335241 A CN 114335241A
- Authority
- CN
- China
- Prior art keywords
- electrode
- metal
- solar cell
- gallium arsenide
- scribing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title claims abstract description 30
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 30
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 44
- 239000002184 metal Substances 0.000 claims abstract description 44
- 238000003466 welding Methods 0.000 claims abstract description 39
- 238000005530 etching Methods 0.000 claims abstract description 17
- 238000001704 evaporation Methods 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 238000002955 isolation Methods 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 15
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims abstract description 4
- 239000010936 titanium Substances 0.000 claims description 13
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 12
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 10
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 9
- 239000007788 liquid Substances 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 239000011259 mixed solution Substances 0.000 claims description 5
- 238000001039 wet etching Methods 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 238000009713 electroplating Methods 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 239000000243 solution Substances 0.000 claims description 4
- BMYNFMYTOJXKLE-UHFFFAOYSA-N 3-azaniumyl-2-hydroxypropanoate Chemical compound NCC(O)C(O)=O BMYNFMYTOJXKLE-UHFFFAOYSA-N 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- FMLYSTGQBVZCGN-UHFFFAOYSA-N oxosilicon(2+) oxygen(2-) titanium(4+) Chemical compound [O-2].[Ti+4].[Si+2]=O.[O-2].[O-2] FMLYSTGQBVZCGN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- -1 titanium oxide-aluminum oxide-magnesium fluoride Chemical compound 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- 239000000872 buffer Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims 2
- 238000005260 corrosion Methods 0.000 abstract description 13
- 230000007797 corrosion Effects 0.000 abstract description 13
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 19
- 239000010931 gold Substances 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000010944 silver (metal) Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000006172 buffering agent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a flexible gallium arsenide solar cell for space and a preparation method thereof, belonging to the technical field of solar cells and being characterized by at least comprising the following steps: s1, preparing lower electrode seed layer metal; growing an epitaxial layer in MOCVD to obtain an epitaxial wafer, evaporating a metal electrode on the back surface of the epitaxial wafer, S2, and preparing a supporting metal electrode; s3, bonding the temporary substrate; s4, removing the substrate; s5, evaporating an upper electrode; s6, etching an isolation groove; s7, evaporating an antireflection film; s8, corroding the antireflection film at the welding points; s9, scribing; and placing the epitaxial wafer into an automatic scribing machine or a laser scribing machine, with the light receiving surface upward, aligning with a scribing mark, starting scribing, scribing the epitaxial wafer into the required battery, and removing the temporary substrate. The invention is suitable for the isolated groove corrosion process of one-time wet corrosion to the bottom, the space is designed by the back electrode of the flexible gallium arsenide battery, and a plurality of welding points of the upper electrode and the lower electrode are on the same surface, thereby being beneficial to the subsequent combined welding.
Description
Technical Field
The invention belongs to the technical field of solar cells, and particularly relates to a flexible gallium arsenide solar cell for space and a preparation method thereof.
Background
Flexible gallium arsenide solar cells are an important development direction for compound solar cells. Under the condition of ensuring the efficiency of the flexible gallium arsenide solar cell, the weight of the cell is far lower than that of the rigid cell, the weight ratio power of the flexible gallium arsenide solar cell is not lower than 1.5W/g, and the weight ratio power is 3 times that of the rigid cell, and the flexible gallium arsenide solar cell for the space is the most effective means for improving the weight ratio power of a solar cell array, so that the emission weight can be greatly reduced, and the emission cost is reduced. The flexible solar cell can be bent and is used behind a spacecraft
At present, flexible gallium arsenide solar cells for domestic and foreign spaces are reported more, and comprise structures such as single junction, double junction, triple junction, quadruple junction and the like. The space flexible gallium arsenide solar cell electrode can be manufactured on the same surface or can be manufactured on two surfaces, wherein the manufacturing on the same surface can be convenient for combination welding. The flexible gallium arsenide solar cell is subjected to isolated groove corrosion in the process of manufacturing, and each single cell is separated, so that a cutting channel is obtained. The isolation groove can be prepared by adopting two modes of plasma etching and wet etching, wherein the flexible gallium arsenide solar cell with the electrode on the same surface has problems in the implementation process of the wet etching process, different epitaxial materials are directly opposite in the etching process, and multiple times of alternate etching are adopted, so that the etching edge is irregular, the side etching is serious, and the adverse effect is caused on the electrical property of the cell.
Disclosure of Invention
The invention provides a flexible gallium arsenide solar cell for space and a preparation method thereof, which are suitable for an isolation groove corrosion process of one-time wet corrosion to the bottom.
The invention provides a preparation method of a flexible gallium arsenide solar cell for space, which comprises the following steps:
s1, preparing lower electrode seed layer metal;
growing an epitaxial layer in MOCVD to obtain an epitaxial wafer, and evaporating a metal electrode on the back surface of the epitaxial wafer, wherein the metal electrode comprises:
the first layer of metal electrode is Ti, the second layer of metal is Au and/or Ag, and the other layers of metal are one or more of Ge, Au, Ag, Ni and Pd;
s2, preparing a supporting metal electrode;
electroplating Cu on the metal electrode;
s3, bonding the temporary substrate;
in a vacuum environment, firstly coating an adhesive on the metal surface of the epitaxial wafer, and then bonding the epitaxial wafer with glass with the same size;
s4, removing the substrate;
firstly, adopting sulfuric acid: hydrogen peroxide: corroding the gallium arsenide substrate by using a corrosive liquid with the water volume ratio of 1:5:1 for 40-60 min, continuously corroding for 50-70 s by using hydrochloric acid, washing by using deionized water, and drying;
s5, evaporating an upper electrode;
photoetching an illuminated surface to prepare Au, Ag, Ni, Ti and Cu metal upper electrodes;
s6, etching an isolation groove;
an isolation groove and a lower electrode welding area are formed in the edge of the battery in a sleeved mode, the width of the isolation groove is 30-200 micrometers, the number of the lower electrode welding areas is selected according to the combined welding requirement, and the area of the lower electrode welding areas is larger than that of a welding head; carrying out primary wet etching by using the mixed solution until the metal Ti electrode on the back is etched, then etching the Ti electrode by using hydrofluoric acid etching solution, and removing the photoresist by using acetone after etching;
s7, evaporating an antireflection film;
removing the CAP layer by using citric acid, and then evaporating and plating an antireflection film;
s8, corroding the antireflection film at the welding points;
carrying out alignment on the light receiving surface, and corroding the antireflection film at the welding point by adopting hydrofluoric acid corrosive liquid;
s9, scribing;
and placing the epitaxial wafer into an automatic scribing machine or a laser scribing machine, with the light receiving surface upward, aligning with a scribing mark, starting scribing, scribing the epitaxial wafer into batteries with required specifications, and removing the temporary substrate.
Preferably, the epitaxial layer is one of a reverse triple junction, a reverse double junction, or a single junction structure.
Preferably, the seed layer metal thickness is in the range of 30nm to 5000 nm.
Preferably, the thickness of Cu is not less than 10 μm.
Preferably, in S3, the bonding temperature is not lower than 90 ℃ and the degree of vacuum is not lower than 1.0X 10-1mBar。
Preferably, in S6, the mixed solution is a mixed solution including hydrobromic acid, nitric acid, and a buffer.
Preferably, in S7, single-layer or multi-layer antireflection film evaporation of titanium oxide-aluminum oxide-magnesium fluoride or titanium oxide-silicon oxide is performed using an electron beam coater.
Preferably, in S4, the etching time is 50min, and then the etching is continued for 60S with hydrochloric acid,
preferably, in S9, the required specifications include 20 × 20, 30 × 40, 40 × 80, 80 × 80.
The second purpose of the invention is to provide a flexible gallium arsenide solar cell for space use, which is obtained by the preparation method.
The invention has the advantages and positive effects that:
the invention is suitable for the isolated groove corrosion process of one-time wet corrosion to the bottom, the space is designed by the back electrode of the flexible gallium arsenide battery, and a plurality of welding points of the upper electrode and the lower electrode are on the same surface, thereby being beneficial to the subsequent combined welding.
The combined welding area of the invention is completely arranged on the light receiving surface, and a plurality of welding areas of the upper electrode and the lower electrode can be designed according to different welding requirements.
The back electrode can be used as a support substrate of a flexible battery, and cannot be damaged by the corrosive liquid of primary wet corrosion.
Drawings
FIG. 1 is a photo-etching layout of an electrode on a light-receiving surface of a solar cell in a preferred embodiment of the present invention;
FIG. 2 is a photo-etching layout of the isolation trench and the trench to be formed in the solder joint region in the preferred embodiment of the present invention;
FIG. 3 is a solder joint opening lithographic layout in a preferred embodiment of the present invention;
FIG. 4 is a schematic cross-sectional view of a solar cell in a preferred embodiment of the invention;
figure 5 is a schematic illustration of a corrosion diagram of a solar cell in a preferred embodiment of the invention.
Detailed Description
In order to further understand the contents, features and effects of the present invention, the following embodiments are illustrated and described in detail with reference to the accompanying drawings: the following examples are illustrative only, not limiting, and are not intended to limit the scope of the invention.
As shown in fig. 1 to 5, the technical solution of the present invention is:
a preparation method of a flexible gallium arsenide solar cell for space comprises the following steps:
The epitaxial wafer used has grown epitaxial layers in MOCVD, which can be reverse triple junction, reverse double junction or single junction structures. And evaporating metal electrodes on the back surface of the epitaxial wafer, wherein the first layer of metal electrode is Ti, the second layer of metal is Au and/or Ag, the other layers of metal can be Ge, Au, Ag, Ni, Pd and other metals and alloys thereof, and the thickness of the seed layer metal is 30 nm-5000 nm.
Electroplating metal Cu on the evaporated metal electrode, wherein the thickness of the metal Cu is not less than 10 mu m.
And coating an adhesive on the metal surface of the epitaxial wafer after the electroplating thickening, and adhering the epitaxial wafer with the glass with the same size. The bonding temperature is not lower than 90 ℃, and the vacuum degree is not lower than 1.0 multiplied by 10-1mBar。
Adopting sulfuric acid: hydrogen peroxide: corroding the gallium arsenide substrate by using the corrosive liquid with the water volume ratio of 1:5:1 for about 50min, continuously corroding for about 1min by using hydrochloric acid, washing by using deionized water, and drying.
Photolithography is performed on the light receiving surface, and the photolithography pattern is as shown in fig. 1. And preparing metal upper electrodes of Au, Ag, Ni, Ti, Cu and the like in the electrode welding area 1. Wherein: as is the metallic material of the seed layer.
The battery edge sleeve is carved with an isolation groove and a lower electrode welding area, a lower electrode welding area 3 and an isolation groove 2 (shown in figure 2). The width of the isolation groove is 30-200 micrometers, one or more lower electrode welding areas can be designed according to the combined welding requirement, and the area of the lower electrode welding area is larger than that of the welding head, so that the welding requirement can be met. The lower electrode welding area in this embodiment is one such area size as shown in fig. 2. And carrying out wet etching once by using a mixed solution of hydrobromic acid/nitric acid/a buffering agent until the back metal Ti electrode is etched. Then, the Ti electrode is corroded by hydrofluoric acid corrosive liquid, and the photoresist is removed by acetone after corrosion.
Step 7, evaporating and plating the antireflection film
Removing the CAP layer by using citric acid, and then performing titanium oxide-aluminum oxide-magnesium fluoride or titanium oxide-silicon oxide single-layer or multi-layer antireflection film evaporation by using an electron beam coating machine.
Step 8, corroding the antireflection film at the welding spot
The light receiving surface is subjected to overlay, the overlay pattern is shown in fig. 3, and small squares in the figure are solder joint stripping areas 4. And corroding the antireflection film at the welding spot by using hydrofluoric acid corrosive liquid.
Step 9, scribing
And placing the epitaxial wafer with corroded welding spots into an automatic scribing machine or a laser scribing machine, with the light receiving surface facing upwards, aligning with a scribing mark, automatically scribing, scribing the epitaxial wafer into batteries with required specifications such as 20 × 20, 30 × 40, 40 × 80, 80 × 80 and the like, and removing the temporary substrate.
Thus, the preparation of the flexible gallium arsenide solar cell for the space is completed.
The product structure is as follows:
as shown in fig. 4, the cross-sectional view of the product includes a lower electrode seed layer on the back surface, a supporting metal electrode, a functional layer, a light-receiving surface metal electrode 5, an upper electrode bonding region and a lower electrode bonding region on the light-receiving surface, and an antireflection film 6. The top view of the product is shown in fig. 5.
The product is characterized in that:
the metal Ti can be prevented from reacting with the corrosive liquid of the primary corrosion isolation groove, so that the smoothness of a corrosion section is ensured, the side corrosion phenomenon is reduced, and gold or silver for welding is protected; the upper electrode welding area and the lower electrode welding area are on the same surface, a plurality of welding areas can be designed according to combination requirements, and subsequent combination is more convenient.
The above description is only for the preferred embodiment of the present invention, and is not intended to limit the present invention in any way, and all simple modifications, equivalent changes and modifications made to the above embodiment according to the technical spirit of the present invention are within the scope of the technical solution of the present invention.
Claims (10)
1. A preparation method of a flexible gallium arsenide solar cell for space is characterized by at least comprising the following steps:
s1, preparing lower electrode seed layer metal;
growing an epitaxial layer in MOCVD to obtain an epitaxial wafer, and evaporating a metal electrode on the back surface of the epitaxial wafer, wherein the metal electrode comprises:
the first layer of metal electrode is Ti, the second layer of metal is Au and/or Ag, and the other layers of metal are one or more of Ge, Au, Ag, Ni and Pd;
s2, preparing a supporting metal electrode;
electroplating Cu on the metal electrode;
s3, bonding the temporary substrate;
in a vacuum environment, firstly coating an adhesive on the metal surface of the epitaxial wafer, and then bonding the epitaxial wafer with glass with the same size;
s4, removing the substrate;
firstly, adopting sulfuric acid: hydrogen peroxide: corroding the gallium arsenide substrate by using a corrosive liquid with the water volume ratio of 1:5:1 for 40-60 min, continuously corroding for 50-70 s by using hydrochloric acid, washing by using deionized water, and drying;
s5, evaporating an upper electrode;
photoetching an illuminated surface to prepare Au, Ag, Ni, Ti and Cu metal upper electrodes;
s6, etching an isolation groove;
an isolation groove and a lower electrode welding area are formed in the edge of the battery in a sleeved mode, the width of the isolation groove is 30-200 micrometers, the number of the lower electrode welding areas is selected according to the combined welding requirement, and the area of the lower electrode welding areas is larger than that of a welding head; carrying out primary wet etching by using the mixed solution until the metal Ti electrode on the back is etched, then etching the Ti electrode by using hydrofluoric acid etching solution, and removing the photoresist by using acetone after etching;
s7, evaporating an antireflection film;
removing the CAP layer by using citric acid, and then evaporating and plating an antireflection film;
s8, corroding the antireflection film at the welding points;
carrying out alignment on the light receiving surface, and corroding the antireflection film at the welding point by adopting hydrofluoric acid corrosive liquid;
s9, scribing;
and placing the epitaxial wafer into an automatic scribing machine or a laser scribing machine, with the light receiving surface upward, aligning with a scribing mark, starting scribing, scribing the epitaxial wafer into batteries with required specifications, and removing the temporary substrate.
2. The method for preparing a flexible GaAs solar cell for space use according to claim 1, wherein the epitaxial layer has one of a triple-junction structure, a double-junction structure or a single-junction structure.
3. The method for preparing a flexible gallium arsenide solar cell for space use as claimed in claim 1 wherein the back seed layer metal thickness is in the range of 30nm to 5000 nm.
4. The method for preparing a flexible gallium arsenide solar cell for space as claimed in claim 1 wherein the thickness of Cu is not less than 10 μm.
5. The method for preparing a flexible GaAs solar cell for space use according to claim 1, wherein in S3, the bonding temperature is not lower than 90 ℃ and the vacuum degree is not lower than 1.0 x 10-1mBar。
6. The method for manufacturing a flexible gallium arsenide solar cell for space use as claimed in claim 1 wherein in S6 the mixture is a mixture comprising hydrobromic acid, nitric acid and buffer.
7. The method of claim 1, wherein in step S7, an electron beam coater is used to perform evaporation of single or multiple antireflection films of titanium oxide-aluminum oxide-magnesium fluoride or titanium oxide-silicon oxide.
8. The method for preparing a flexible gallium arsenide solar cell for space use as claimed in claim 1, wherein the etching time is 50min in S4, and then the etching is continued for 60S with hydrochloric acid.
9. The method of claim 1, wherein in S9, the required specification includes 20 × 20, 30 × 40, 40 × 80, and 80 × 80.
10. A spatially flexible gallium arsenide solar cell obtainable by the preparation process according to any of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111552062.XA CN114335241A (en) | 2021-12-17 | 2021-12-17 | Flexible gallium arsenide solar cell for space and preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111552062.XA CN114335241A (en) | 2021-12-17 | 2021-12-17 | Flexible gallium arsenide solar cell for space and preparation method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114335241A true CN114335241A (en) | 2022-04-12 |
Family
ID=81052009
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111552062.XA Pending CN114335241A (en) | 2021-12-17 | 2021-12-17 | Flexible gallium arsenide solar cell for space and preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114335241A (en) |
-
2021
- 2021-12-17 CN CN202111552062.XA patent/CN114335241A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5106880B2 (en) | Metamorphic layers in multijunction solar cells. | |
| JP3169497B2 (en) | Solar cell manufacturing method | |
| JP2015532535A (en) | Photovoltaic device using electroplated metal grid | |
| CN111799344A (en) | Flexible gallium arsenide solar cell and manufacturing method thereof | |
| KR20110063546A (en) | Method for fabricating a solar cell using a direct-pattern pin-hole-free masking layer | |
| TWI445189B (en) | Lift-off structur for substrate of a photoelectric device and method thereof | |
| CN112018216A (en) | Method for transferring solar cell substrate | |
| JP2008282912A (en) | Manufacturing method for solar battery element | |
| JP5472420B2 (en) | Method for manufacturing integrated thin film element | |
| CN111524984A (en) | Flexible gallium arsenide solar cell chip and manufacturing method thereof | |
| KR20120033435A (en) | Method for fabricating high efficiency flexible compound semiconductor thin film solar cell with chalcopyrite system | |
| CN114335241A (en) | Flexible gallium arsenide solar cell for space and preparation method | |
| CN108258062B (en) | Gallium arsenide solar cell and preparation method thereof | |
| JPS61234082A (en) | Super lightweight flexible semiconductor device array and manufacture thereof | |
| CN111726076B (en) | Solar-energy-based power generation and energy storage integrated device and preparation method thereof | |
| CN113066907B (en) | Preparation method of three-junction gallium arsenide solar cell with nano-mesh surface electrode | |
| CN110828581A (en) | Flexible solar cell and manufacturing method thereof | |
| JP5288149B2 (en) | Method for manufacturing integrated thin film element | |
| CN112531077B (en) | Preparation method of flexible gallium arsenide solar cell for space | |
| TWI496308B (en) | Thin film solar cell and manufacturing method thereof | |
| JP5472419B2 (en) | Method for manufacturing integrated thin film element | |
| JP4558461B2 (en) | Solar cell and method for manufacturing the same | |
| CN109768104B (en) | Self-protection type integrated diode battery structure and preparation method thereof | |
| US20230215963A1 (en) | Solar cell device and method for producing the same | |
| CN116995108A (en) | Single-side electrode germanium thin film solar cell resistant to temperature impact and preparation method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |