CN114122166A - N-type GaAs ohmic contact electrode material and preparation method thereof - Google Patents
N-type GaAs ohmic contact electrode material and preparation method thereof Download PDFInfo
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- CN114122166A CN114122166A CN202111439744.XA CN202111439744A CN114122166A CN 114122166 A CN114122166 A CN 114122166A CN 202111439744 A CN202111439744 A CN 202111439744A CN 114122166 A CN114122166 A CN 114122166A
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- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 41
- 239000007772 electrode material Substances 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 31
- 238000004544 sputter deposition Methods 0.000 claims abstract description 26
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 25
- 239000000956 alloy Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000000137 annealing Methods 0.000 claims abstract description 20
- 239000010931 gold Substances 0.000 claims description 32
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000012300 argon atmosphere Substances 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- 230000008901 benefit Effects 0.000 abstract description 7
- 238000001514 detection method Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 24
- 239000000463 material Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000004630 atomic force microscopy Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000002288 cocrystallisation Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000006023 eutectic alloy Substances 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L31/0224—Electrodes
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract
The invention discloses an n-type GaAs ohmic contact electrode material and a preparation method thereof, wherein two electrode areas are arranged on an n-type GaAs substrate by adopting a mask method, and AuGeNi alloy is sputtered firstly and Au is sputtered secondly on the two electrode areas by adopting an ion sputtering method to form two corresponding AuGeNi/Au electrode structures; and finally, annealing at high temperature to obtain the electrode with the n-type GaAs and the stable ohmic contact. The ohmic contact electrode of the n-type GaAs prepared by the method has the advantages of uniform electrode components and smooth and flat surface through detection. The I-V curve between the two electrodes has good linear and symmetrical relation, the resistivity of the electrode is far less than that of the GaAs substrate, the performance indexes of the electrode meet the electrode requirement of stable contact, and the electrode can be successfully applied to n-type GaAs related devices. Compared with the manufacturing process in the prior art, the method has the advantages of low equipment cost, short process, electrode material saving, good economic benefit and practical value, and is particularly suitable for scientific research laboratories.
Description
Technical Field
The invention belongs to the field of photoelectric technology, relates to preparation of a semiconductor material, and particularly relates to an n-type GaAs ohmic contact electrode material and a preparation method thereof.
Background
Gallium arsenide (GaAs) is a group iii-v compound semiconductor having the crystalline structure of sphalerite. It has some properties superior to silicon and has become an important semiconductor material next to silicon material. It can be made into semi-insulating high-resistance material whose resistivity is higher than that of silicon and germanium by more than 3 orders of magnitude, and can be used in photoconductive switch, integrated circuit substrate, infrared detector and gamma photon detector, etc. In addition, gallium arsenide has an electron mobility 6 times higher than that of silicon, making it a necessity for ultra-high speed, ultra-high frequency devices and integrated circuits. It is also widely used in the military field and is an important material for laser guided missiles. Therefore, the method has high application value in modern advanced technology. However, different ohmic contact electrode materials have a great influence on the photoelectric properties thereof, so that good ohmic contact electrode materials and preparation techniques thereof are continuously sought.
The ohmic contact means a contact pattern having a linear and symmetrical current-voltage characteristic curve between a semiconductor material and an electrode. In the early days, the n-type GaAs electrode is made of AuGe eutectic alloy, and the process is to carry out vacuum evaporation and then carry out high-temperature annealing to realize cocrystallization, but Au is easy to ball in the process, so that the unevenness of the electrode body is caused, and the electrode can fall off; in order to solve the problem, researchers in the industry add Ni in the eutectic process to prevent Au from pilling; tungsten nitride (WN) is added in the subsequent process improvement to be used as a diffusion-proof layer, and finally Au is evaporated to form an ohmic contact electrode. At present, the relatively mature n-type GaAs ohmic contact electrode material is AuGeNi/Au electrode with Au wt88% (weight percentage), Ge wt12%, + Ni wt 5%. The preparation process generally adopts an evaporation method. The disadvantages of this method are: in order to prevent the alloy from being oxidized during vapor deposition, a high vacuum degree is required, the requirement cannot be met only by using a mechanical pump for pumping, and a molecular pump needs to be arranged, so that the equipment cost is high. In addition, the material is diffused into the whole cavity in the evaporation process, so that the waste is serious and the cleaning is troublesome. Therefore, it is a subject of research by technical personnel in the industry to find a method for obtaining an ohmic contact electrode of n-type GaAs, which has a simple process and a low cost.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide an n-type GaAs ohmic contact electrode material and a preparation method thereof.
The invention is realized by the following technical scheme:
an n-type GaAs ohmic contact electrode material is prepared as using n-type GaAs as substrate, setting two electrode regions on n-type GaAs substrate by mask method, sputtering AuGeNi alloy layer on two electrode regions, sputtering Au layer on AuGeNi alloy layer to form two corresponding AuGeNi/Au electrodes.
Furthermore, the thickness of the AuGeNi alloy layer is 50-70 nm, and the thickness of the Au layer is 100-120 nm.
The invention further improves the scheme as follows:
a preparation method of an n-type GaAs ohmic contact electrode material comprises the following steps: setting two electrode areas on an n-type GaAs substrate by adopting a mask method, sputtering AuGeNi alloy firstly and then sputtering Au on the two electrode areas by adopting an ion sputtering method to form two corresponding AuGeNi/Au electrode structures; and finally, annealing at high temperature to obtain the electrode with the n-type GaAs and the stable ohmic contact.
Further, the AuGeNi alloy comprises the following components: au 88wt%, Ge 12wt%, and + Ni 5 wt%; the gold Au purity is more than 99.99%.
Furthermore, when the AuGeNi alloy is sputtered, the distance between the AuGeNi alloy target and the substrate is 5 cm, the mechanical pump is started, the cavity is vacuumized to 2Pa, air is filled into the cavity to adjust the air pressure in the cavity to 6 Pa, and then sputtering can be started, and the current is kept at 5 mA in the sputtering process by finely adjusting the air pressure.
Further, when sputtering Au, the distance between the Au target and the substrate is 7 cm, the mechanical pump is started, the cavity is vacuumized to 2Pa, air is filled into the cavity to adjust the air pressure in the cavity to 6 Pa, then sputtering can be started, and the current is kept at 5 mA in the sputtering process by finely adjusting the air pressure.
Further, during high-temperature annealing, the substrate plated with the electrode is moved to a tubular annealing furnace, and annealing treatment is carried out in an argon atmosphere at the annealing temperature of 400-450 ℃ for 8-10 hours.
The invention has the beneficial effects that:
through detection, the ohmic contact electrode of the n-type GaAs prepared by the method has uniform electrode components and flat and smooth surface. The I-V curve between the two electrodes has good linear and symmetrical relation, the resistivity of the electrode is far less than that of the GaAs substrate, the performance indexes of the electrode meet the electrode requirement of stable contact, and the electrode can be successfully applied to n-type GaAs related devices.
Compared with the prior art, the manufacturing process has the advantages of low equipment cost, short flow, no waste of electrode materials, good economic benefit and practical value, and is particularly suitable for scientific research laboratories.
Drawings
FIG. 1 is a Scanning Electron Microscope (SEM) image of an AuGeNi alloy layer;
FIG. 2 is a surface topography of AuGeNi/Au electrodes analyzed by Atomic Force Microscopy (AFM);
FIG. 3 is an X-ray energy spectroscopy (edax) spectrum of AuGeNi/GaAs;
FIG. 4 is a cross-sectional view of an AuGeNi alloy and GaAs substrate;
FIG. 5 is an I-V curve between two AuGeNi/Au electrodes;
wherein 5a is an I-V curve before electrode annealing; 5b is the I-V curve after annealing.
Detailed Description
Example 1
Setting two electrode areas on an n-type GaAs substrate by adopting a mask method, and sputtering AuGeNi alloy by adopting an ion sputtering method: the distance between the AuGeNi alloy target and the substrate is 5 cm. And opening a mechanical pump, vacuumizing the cavity to 2Pa, filling air to adjust the air pressure in the cavity to 6 Pa, and starting sputtering, wherein the current is kept at 5 mA in the sputtering process by finely adjusting the air pressure, and the thickness of the AuGeNi alloy layer needs to reach 50-70 nm. And then sputtering gold Au: the distance between the gold Au target and the substrate is 7 cm, a mechanical pump is started, the chamber is vacuumized to 2Pa, air is filled into the chamber to adjust the air pressure in the chamber to 6 Pa, sputtering can be started, the current is kept at 5 mA in the sputtering process by fine adjustment of the air pressure, and the thickness of the Au layer needs to reach 100-120 nm. And after the thickness of the electrode meets the requirement, the substrate is moved to a tubular annealing furnace, and annealing treatment is carried out in an argon atmosphere at the annealing temperature of 400-450 ℃ for 8-10 hours.
Fig. 1 is a Scanning Electron Microscope (SEM) image of an AuGeNi alloy layer, showing that the alloy layer surface is flat and smooth.
FIG. 2 is a surface topography of AuGeNi/Au electrode analyzed by Atomic Force Microscope (AFM), the electrode material showed a columnar growth mode with a surface roughness of only 2.4 nm, again demonstrating that the electrode surface was very flat.
FIG. 3 is an X-ray energy spectrum analysis (edax) map of AuGeNi/GaAs with peaks showing the presence of Au, Ge, Ni elements and the composition shown in inset. The test is carried out on a plurality of different areas on the substrate, and the composition is uniform and has no segregation phenomenon.
Fig. 4 is a cross-sectional view of an AuGeNi alloy and GaAs substrate, showing that the AuGeNi alloy layer has a thickness of about 65 nm.
FIG. 5 is an I-V curve between two AuGeNi/Au electrodes. Wherein, 5a is an I-V curve before electrode annealing, and the curve shows a rectification characteristic, which indicates that Schottky contact is formed between the electrode and the GaAs substrate, but not ohmic contact. And 5b is an I-V curve after annealing, and the curve is linear, which indicates that ohmic contact exists between the electrode and the substrate. The resistance was reduced by a factor of 20 compared to 5 a. The results fully illustrate the importance of the annealing treatment.
The detection results of the above items prove that the ohmic contact electrode material of the n-type GaAs prepared by the invention is a stable ohmic contact electrode material meeting the requirements, and compared with the existing evaporation method, the preparation method of the invention has the advantages of simple flow, low equipment cost, high utilization rate of the electrode material, no waste, and good economic benefit and practical value.
Claims (7)
1. An n-type GaAs ohmic contact electrode material is characterized in that n-type GaAs is used as a substrate, two electrode areas are arranged on the n-type GaAs substrate by adopting a mask method, an AuGeNi alloy layer is sputtered on the two electrode areas, and an Au layer is sputtered on the AuGeNi alloy layer to form two corresponding AuGeNi/Au electrodes.
2. An n-type GaAs ohmic contact electrode material according to claim 1, wherein: the thickness of the AuGeNi alloy layer is 50-70 nm, and the thickness of the Au layer is 100-120 nm.
3. The method for preparing an n-type GaAs ohmic contact electrode material according to claim 1, comprising the steps of: setting two electrode areas on an n-type GaAs substrate by adopting a mask method, sputtering AuGeNi alloy firstly and then sputtering Au on the two electrode areas by adopting an ion sputtering method to form two corresponding AuGeNi/Au electrode structures; and finally, annealing at high temperature to obtain the electrode with the n-type GaAs and the stable ohmic contact.
4. The method for preparing an n-type GaAs ohmic contact electrode material according to claim 3, wherein: the AuGeNi alloy comprises the following components: au 88wt%, Ge 12wt%, and + Ni 5 wt%; the gold Au purity is more than 99.99%.
5. The method for preparing an n-type GaAs ohmic contact electrode material according to claim 3, wherein: when the AuGeNi alloy is sputtered, the distance between an AuGeNi alloy target and a substrate is 5 cm, a mechanical pump is started, the chamber is vacuumized to 2Pa, air is filled into the chamber to adjust the air pressure in the chamber to 6 Pa, and then sputtering can be started, and the current is kept at 5 mA in the sputtering process by finely adjusting the air pressure.
6. The method for preparing an n-type GaAs ohmic contact electrode material according to claim 3, wherein: when sputtering Au, the distance between the Au target and the substrate is 7 cm, a mechanical pump is started, the cavity is vacuumized to 2Pa, air is filled into the cavity to adjust the air pressure in the cavity to 6 Pa, sputtering can be started, and the current is kept at 5 mA by finely adjusting the air pressure in the sputtering process.
7. The method for preparing an n-type GaAs ohmic contact electrode material according to claim 3, wherein: and during high-temperature annealing, the substrate plated with the electrode is moved to a tubular annealing furnace, and annealing treatment is carried out in an argon atmosphere at the annealing temperature of 400-450 ℃ for 8-10 hours.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06120163A (en) * | 1992-09-30 | 1994-04-28 | Victor Co Of Japan Ltd | Forming of electrode of semiconductor device |
| CN103794664A (en) * | 2014-02-28 | 2014-05-14 | 淮阴师范学院 | Novel n type semi-insulating GaAs ohmic contact electrode material and method for preparing novel n type semi-insulating GaAs ohmic contact electrode material |
| US20170040477A1 (en) * | 2014-04-24 | 2017-02-09 | Sumitomo Electric Industries, Ltd. | Semiconductor layered structure and photodiode |
| CN107256895A (en) * | 2017-05-23 | 2017-10-17 | 西安航谷微波光电科技有限公司 | A kind of preparation method of high-performance GaAs laser batteries |
-
2021
- 2021-11-30 CN CN202111439744.XA patent/CN114122166A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06120163A (en) * | 1992-09-30 | 1994-04-28 | Victor Co Of Japan Ltd | Forming of electrode of semiconductor device |
| CN103794664A (en) * | 2014-02-28 | 2014-05-14 | 淮阴师范学院 | Novel n type semi-insulating GaAs ohmic contact electrode material and method for preparing novel n type semi-insulating GaAs ohmic contact electrode material |
| US20170040477A1 (en) * | 2014-04-24 | 2017-02-09 | Sumitomo Electric Industries, Ltd. | Semiconductor layered structure and photodiode |
| CN107256895A (en) * | 2017-05-23 | 2017-10-17 | 西安航谷微波光电科技有限公司 | A kind of preparation method of high-performance GaAs laser batteries |
Non-Patent Citations (4)
| Title |
|---|
| S. TAHAMTAN等: "Investigation on the effect of annealing process parameters on AuGeNi ohmic contact to n-GaAs using microstructural characteristics", MICROELECTRONICS RELIABILITY, vol. 51, no. 8, pages 1330 - 1336, XP028236010, DOI: 10.1016/j.microrel.2011.03.039 * |
| 刘文超, 夏冠群, 李冰寒, 黄文奎, 刘延祥: "难熔金属与n-GaAs的欧姆接触特性", 半导体学报, no. 01, pages 57 - 61 * |
| 刘青: "GaAs半导体激光器的欧姆接触研究", 中国优秀硕士学位论文全文数据库（电子期刊） 信息科技辑, no. 12, pages 135 - 22 * |
| 左芬等: "n型GaAs欧姆接触电极制备工艺", 人工晶体学报, vol. 51, no. 4, pages 606 - 610 * |
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