CN110890280B - Method for preparing oxide semiconductor Schottky diode by using palladium/palladium oxide double-layer Schottky electrode - Google Patents

Method for preparing oxide semiconductor Schottky diode by using palladium/palladium oxide double-layer Schottky electrode Download PDF

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CN110890280B
CN110890280B CN201911181274.4A CN201911181274A CN110890280B CN 110890280 B CN110890280 B CN 110890280B CN 201911181274 A CN201911181274 A CN 201911181274A CN 110890280 B CN110890280 B CN 110890280B
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schottky diode
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CN110890280A (en
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辛倩
颜世琪
宋爱民
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Shenzhen Research Institute Of Shandong University
Shandong University
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Shandong University
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
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    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes

Abstract

The invention relates to a method for preparing an oxide semiconductor Schottky diode by utilizing a palladium/palladium oxide double-layer Schottky electrode, which sequentially comprises a substrate, an active layer and Pd/PdO from bottom to top X Double-layer structure Pd/PdO X The double-layer structure sequentially comprises Pd oxide PdO from bottom to top x Metal Pd, comprising the following steps: (1) growing an ohmic electrode on a substrate; (2) growing an active layer; (3) Pd/PdO formation on active layer using magnetron sputtering X A double layer structure; (4) annealing under low temperature conditions. The invention can prepare the semiconductor film material which is similar to the target material in composition, compact and good in uniformity, can control the oxidation degree of the Schottky electrode and regulate and control the interface oxygen concentration by controlling the gas atmosphere of the sputtering chamber, can be compatible with various flexible plastic substrates, can be deposited in a large area at low cost, and is beneficial to the industrial conversion and popularization of the oxide semiconductor Schottky diode.

Description

Method for preparing oxide semiconductor Schottky diode by using palladium/palladium oxide double-layer Schottky electrode
Technical Field
The invention relates to a method for preparing an oxide semiconductor Schottky diode by utilizing a palladium/palladium oxide double-layer Schottky electrode, belonging to the technical field of semiconductor materials and devices.
Background
In the 21 st century, human beings have entered the age of rapid development of informatization, and flat panel displays have also put forward a development of fast lanes as one of important ways of information exchange, and Thin Film Transistors (TFTs) have also put forth requirements of higher standards, for example, higher mobility, processability at low temperature or even at room temperature so as to be compatible with flexible substrates such as plastics, papers, etc., transparency to visible light, etc., as core components of switching and driving. The traditional silicon-based device has not been capable of well meeting the requirements of current flexibility, transparent electronics and the like due to complex preparation process, high process temperature, difficulty in realizing flexibility, high cost, opacity and the like.
In recent years, transparent oxide semiconductors represented by indium gallium zinc oxide In-Ga-Zn-O (IGZO) have been favored by researchers at home and abroad, and they have high mobility (-10-100 cm) 2 and/Vs), the wide forbidden band is transparent to visible light, can be processed on a flexible substrate at room temperature, can form a film uniformly in a large area, and the like. Like transistors, diodes are the basic components in semiconductor circuits, and high performance schottky diodes in radio frequency ID tags, solar cells, amplification circuits, and logic circuits play a vital role. Schottky diodes (SBD) utilize a schottky barrier formed when a metal is in contact with a semiconductor, which determines the current transfer and capacitance characteristics thereof. Compared with other diode structures, schottky diodes have two main advantages: firstly, the starting voltage and the on-resistance of the Schottky diode are small, so that the power consumption of the device is easier to reduce; second, schottky diodes are majority carrier transported and there is no minority carrier injection process, so their switching speed is fast, and they can be used for (ultra) high frequency applications.
At present, researches on an oxide semiconductor Schottky diode are still in a primary stage, related literature reports at home and abroad are few, a Honson group PLD method in Japan is used for preparing a Pt-IGZO Schottky diode, and superior performance (ideal factor 1.04; barrier height 1.2eV; rectification ratio 10) is obtained by high-temperature annealing at 200 DEG C 8 )[D.H.Lee,K.Nomura,T.Kamiya,and H.Hosono,IEEE Electron.Dev.Lett.,32,1695-1697(2011).]. PLD method preparation is difficult to be applied in industrial production due to high preparation cost, and the preparation method needs to be annealed after being subjected to high temperature of 200 DEG CThis far exceeds the temperature tolerance of most flexible substrates, greatly limiting the application prospects of IGZO SBDs in flexible and wearable electronic products. The Pd-IGZO flexible Schottky diode with excellent DC and high-frequency performance is developed on a flexible PET plastic substrate by using a non-annealing room temperature process since 2015-2019 of the applicant team of the patent, wherein the DC performance can realize an ideal factor of 1.09 and a switching ratio of 2 multiplied by 10 7 [Lulu Du,Jiawei Zhang,Yunpeng Li,Mingsheng Xu,Qingpu Wang and Aimin Song,IEEE Transactions on Electron Devices,4326-4333(2018).]The high frequency performance enables a cut-off frequency of 6.25GHz [ Zhang, J., li, Y., zhang, B.et al. Flexible instruction-gallium-zinc-oxide Schottky diode operating beyond 2.45GHz.Nat Commun 6,7561 (2015)]The highest frequency record of the flexible plastic electrons at the time is broken. However, the process must prepare the Pd schottky electrode in advance and perform oxygen treatment on the Pd electrode, and in practical circuit applications, in order to avoid the influence of other processes on the schottky interface in the early stage, it is generally desirable to prepare the schottky interface as a later stage process.
Currently IGZO schottky diodes also face a number of problems: firstly, it is difficult to obtain a stable and high-quality schottky junction by using IGZO as a semiconductor active layer, mainly because the oxide semiconductor has many defects such as oxygen vacancies and the like, and the schottky interface is very sensitive to the process. Secondly, the process for preparing the IGZO Schottky diode usually needs annealing at a higher temperature, and the process integration and the development of the IGZO Schottky diode in the fields of flexible electronics and the like are limited to a certain extent. Thirdly, the preparation process needs to perform oxygen enrichment treatment on the schottky interface, so that the schottky electrode is difficult to be used as the final process, and the schottky electrode is very sensitive to the later processes (such as atmosphere, annealing and the like), so that the application of the schottky electrode in circuit integration is limited to a great extent.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a method for preparing an indium gallium zinc oxide Schottky diode by using double-layer palladium oxide contact, and the process can realize the preparation of a Schottky electrode as a final procedure in a preparation flow.
SputteringPd/PdO x The double-layer structure is a simple, low-cost, easy to prepare in large area and good in repeatability, and the stable and high-performance Schottky diode is successfully prepared under the low-temperature annealing condition by changing the oxidation degree of the contact surface and layered sputtering, so that a foundation is laid for the application of the Schottky diode in flexible integrated circuits and the like.
Term interpretation:
Pd/PdO X the gas atmosphere in the deposition process of the contact surface contacted with the IGZO is argon-oxygen mixed gas by adopting a sputtering method, which is favorable for forming Pd oxide, on one hand, the oxygen content of the IGZO at the interface is enhanced, and on the other hand, the work function of the Pd is improved; the gas atmosphere deposited on the non-contact surface is pure argon gas, which is beneficial to forming Pd metal.
The technical scheme of the invention is as follows:
Pd/PdO sputtering method X Method for preparing oxide semiconductor Schottky diode by double-layer structure contact, wherein the oxide semiconductor Schottky diode comprises a substrate, an ohmic electrode, an active layer and Pd/PdO from bottom to top X Double-layer structure, X is 0 in value range<X<1，Pd/PdO X The double-layer structure sequentially comprises oxide PdO from bottom to top X Metal Pd, comprising the following steps:
(1) Sequentially growing the ohmic electrode and depositing the active layer on the substrate;
(2) Generating the Pd/PdO on the active layer using magnetron sputtering X The double-layer structure comprises the following steps:
A. placing a sample and a Pd target material into a sputtering chamber, and vacuumizing;
B. setting the sputtering power to be 30-100W, and introducing O 2 Argon-oxygen mixture with the content of 2.5-35 percent is introduced into the argon-oxygen mixture to form O 2 The volume ratio of the oxide PdO is kept between 3.45 and 4.00mTorr, and 5 to 20nm of oxide PdO is generated on the active layer X ；
C. Setting the sputtering power to be 30-100W, introducing pure Ar, and keeping the working air pressure of the sputtering chamber to be 3.55-4.10mTorr in the oxide PdO X Generating 20-100nm of the metal Pd;
(3) Annealing at 50-200deg.C for 30-90 min.
The invention adopts the preparation process of the magnetron sputtering method, can prepare the semiconductor film material which is similar to the target material in composition, compact and good in uniformity, can control the oxidation degree of the Schottky electrode and regulate and control the interface oxygen concentration by controlling the gas atmosphere of the sputtering chamber, can be compatible with various flexible plastic substrates (such as PET, PEN, PI and the like), can be deposited in a large area and at low cost, and is beneficial to the industrial conversion and popularization of the oxide semiconductor Schottky diode.
The palladium oxide deposited on the contact layer of the oxide semiconductor Schottky diode fills the oxygen vacancy defect of the interface, reduces the carrier concentration at the interface, reduces the interface band gap state density and the Fermi level pinning effect caused by the interface band gap state density, and is beneficial to forming high-quality Schottky contact; secondly, palladium oxide has a work function greater than that of metallic palladium, and can form a larger schottky barrier. And metal palladium is sputtered on the non-contact upper layer, so that the contact resistance between the probe and metal in the test is reduced, and the probe penetration test is facilitated. The invention grows Pd/PdO by using a magnetron sputtering method in a mode of layering and oxygen introducing in the growth process X The double-layer structure is used as the Schottky electrode, and the stable and high-performance Schottky diode is successfully manufactured under the low-temperature annealing condition.
According to a preferred embodiment of the present invention, the oxide semiconductor schottky diode is an indium gallium zinc oxide schottky diode, wherein in the step B, sputtering power is set to 40W, and O is introduced 2 Regulating the working pressure of a sputtering chamber to 3.46mTorr by using an argon-oxygen mixture gas with the content of 25 percent, sputtering for 90 seconds, and generating the oxide PdO with the thickness of 5nm on the active layer X 。
The palladium oxide prepared by the optimal value forms good Schottky contact with high potential barrier and close to 1 (1.03) by contact with the IGZO layer, and the working principle is that: the palladium oxide deposited on the IGZO contact layer firstly fills the oxygen vacancy defect of the interface, can obviously reduce the density of the interface state, so that the Fermi level pinning effect caused by the interface state is weakened, and secondly, the work function of the palladium oxide is larger than that of the metallic palladium, so that a larger Schottky barrier can be formed.
According to the invention, preferably, the oxide semiconductor schottky diode is an indium gallium zinc oxide schottky diode, in the step C, the sputtering power is set to 40W, pure Ar is introduced, the working air pressure of the sputtering chamber is adjusted to 3.75mTorr, the sputtering is performed for 10min, and the oxide PdO is obtained X The metal Pd is formed at the upper generation thickness of 45 nm.
At oxide PdO X And the metal Pd is continuously deposited on the probe, so that the contact resistance between the probe and the metal in the test is reduced, and the probe penetration test is facilitated.
According to the invention, preferably, the oxide semiconductor schottky diode is an indium gallium zinc oxide schottky diode, and in the step (3), the oxide semiconductor schottky diode is annealed for 60min at 100 ℃ by using a Hotplate in an air environment.
After air annealing at 100 ℃, the oxygen vacancy concentration of the IGZO layer is reduced, thereby reducing the oxygen vacancy concentration of the IGZO layer and the PdO X The carrier concentration of the layer contact surface is convenient for forming good Schottky contact, and meanwhile, the low-temperature annealing at 100 ℃ is within the tolerance range of the flexible substrate, so that the method has wide prospect in the field of flexible wearable electronics in future.
According to the present invention, preferably, in the step (1), a Ti thin film is grown on the substrate as the ohmic electrode using an electron beam evaporation plating method, comprising the steps of:
D. placing a substrate and a Ti metal source into an electron beam evaporation chamber, and vacuumizing;
E. evaporating a Ti film with the thickness of 30-100nm on the substrate.
Further preferably, in the step E, a Ti film having a thickness of 50nm is evaporated on the substrate.
The adhesion with the substrate is good, and the roughness is atomic level, which is beneficial to forming ohmic contact.
According to the present invention, preferably, the oxide semiconductor schottky diode is an indium gallium zinc oxide schottky diode, and in the step (1), an IGZO thin film is grown on the ohmic electrode as the active layer by using a magnetron sputtering method, and the method includes the steps of:
F. placing the Ti electrode sample and the IGZO ceramic target into a sputtering chamber, and vacuumizing;
G. setting the sputtering power to 50-100W, introducing O 2 And regulating the working pressure of the sputtering chamber to 3.30-4.00mTorr by using 0-5% of argon-oxygen mixed gas, and sputtering for 35 minutes, 43 seconds and 107 minutes to obtain the IGZO film with the thickness of about 50-200 nm.
Proper growth conditions effectively obtain an IGZO film with a smooth and uniform surface, and good Schottky contact is easy to prepare.
Further preferably, in the step G, the sputtering power is set to 70W, and O is introduced 2 And regulating the working pressure of a sputtering chamber to 3.58mTorr by using an argon-oxygen mixed gas with the content of 2.5%, and sputtering for 71 minutes and 25 seconds to obtain the IGZO film with the thickness of 100 nm.
At O 2 The IGZO is deposited under the condition of the argon-oxygen mixture gas with the content of 2.5%, so that the oxygen vacancy defect in the IGZO layer can be effectively reduced, carriers generated by the oxygen vacancy defect are reduced, and good Schottky contact is easier to form at an interface.
According to a preferred embodiment of the present invention, the oxide semiconductor Schottky diode is an InGaZn oxide Schottky diode, and the substrate is polished SiO of 100-300nm 2 /P + Si, the surface of the substrate is polished, and the surface is rough at near atomic level, which is beneficial to the formation of good Schottky junctions. The ohmic electrode is a Ti film with the thickness of 30-100nm, the active layer is an IGZO film with the thickness of 50-200nm, and the oxide PdO X PdO of 5-20nm x X is in the value range of 0-1, and the metal Pd is 20-100nm Pd.
Further preferably, the substrate is 100nm polished SiO 2 /P + Si, the ohmic electrode is a 50nm Ti film, the active layer is a 100nm IGZO film, the oxide PdO X PdO at 5nm X The metal Pd is 45nm Pd.
The adoption of the 100nm thick IGZO layer satisfies that the width of the intrinsic depletion region of the Schottky diode can form a good Schottky junction, and the 5nm PdOx and 45nm Pd can form enough oxide layers at the interface so as to be easier to establish a Schottky barrier, and can provide enough thickness for probe testing so as not to damage the device.
According to the present invention, preferably, the step (1) is preceded by cleaning the substrate, which means: sequentially using a Decon cleaning agent (Decon) to ultrasonically clean for 5min at 90W power, using deionized water to ultrasonically clean for 10min at 90W power, using acetone to ultrasonically clean for 5min at 90W power, using ethanol to ultrasonically clean for 5min at 90W power, and drying with nitrogen for later use.
The beneficial effects of the invention are as follows:
1. the method of the invention is characterized in that the method is realized by exploring and optimizing magnetron sputtering Pd/PdO X The double-layer structure and IGZO are annealed in low-temperature (100 ℃) air to prepare the stable high-performance Schottky diode. The method is simple, efficient and easy to repeat, and is suitable for industrial large-area production.
2. The Schottky diode prepared by the method has excellent electrical properties: an ideality factor close to 1 (1.03), a high switching current ratio (3×10) 7 ) A small series resistance (250 mΩ cm) 2 ) High barrier (0.85 eV) and higher reverse breakdown voltage (11-14V). The excellent electrical properties can be obtained through magnetron sputtering large-scale deposition and low-temperature (100 ℃) annealing conditions, so that the Schottky diode prepared by the method has wide application prospect in future large-scale flexible integrated circuits.
Drawings
FIG. 1 is an AFM image of an IGZO film;
FIG. 2 is a schematic diagram of the IGZO SBD structure;
FIG. 3 is a schematic J-V curve of the IGZO SBD;
FIG. 4A is an IGZO SBD 2 /C 2 -a V-curve schematic;
fig. 5 is a schematic diagram of breakdown curves of IGZO SBD.
Detailed Description
The invention is further defined by, but is not limited to, the following drawings and examples in conjunction with the specification.
Example 1
Pd/PdO sputtered by double layers X Method for preparing indium gallium zinc oxide Schottky diode with double-layer structure, wherein the indium gallium zinc oxide Schottky diode comprises a substrate, an ohmic electrode, an active layer and Pd/PdO from bottom to top X Double-layer structure, X is 0-1, pd/PdO X The double-layer structure sequentially comprises oxide PdO from bottom to top X Metal Pd, as shown in fig. 2, comprises the steps of:
(1) Sequentially growing an ohmic electrode and depositing an active layer on a substrate;
(2) Pd/PdO formation on the active layer using magnetron sputtering X The double-layer structure comprises the following steps:
A. placing a sample and a Pd target material into a sputtering chamber, and vacuumizing;
B. setting the sputtering power to be 30-100W, and introducing O 2 Argon-oxygen mixture with the content of 2.5-35 percent is introduced into the argon-oxygen mixture to form O 2 The volume ratio of the sputtering chamber is kept at 3.45-4.00mTorr, and oxide PdO with the thickness of 5-20nm is generated on the active layer X ；
C. Setting sputtering power to 30-100W, introducing pure Ar, maintaining working air pressure of sputtering chamber to 3.55-4.10mTorr, and oxidizing PdO X Generating 20-100nm metal Pd on the metal carrier;
(3) Annealing at 50-200deg.C for 30-90 min.
The invention adopts the preparation process of the magnetron sputtering method, can prepare the semiconductor film material which is similar to the target material in composition, compact and good in uniformity, can control the oxidation degree of the Schottky electrode and regulate and control the interface oxygen concentration by controlling the gas atmosphere of the sputtering chamber, can be compatible with various flexible plastic substrates (such as PET, PEN, PI and the like), can be deposited in a large area and at low cost, and is beneficial to the industrial conversion and popularization of the oxide semiconductor Schottky diode.
The palladium oxide deposited on the contact layer of the oxide semiconductor Schottky diode fills the oxygen vacancy defect of the interface, reduces the carrier concentration at the interface, reduces the interface band gap state density and the Fermi level pinning effect caused by the interface band gap state density, and is beneficial to forming high-quality Schottky contact; work function of palladium oxideThe number is greater than that of metallic palladium, enabling the formation of a greater schottky barrier. And metal palladium is sputtered on the non-contact upper layer, so that the contact resistance between the probe and metal in the test is reduced, and the probe penetration test is facilitated. The invention grows Pd/PdO by using a magnetron sputtering method in a mode of layering and oxygen introducing in the growth process X The double-layer structure is used as the Schottky electrode, and the stable and high-performance Schottky diode is successfully manufactured under the low-temperature annealing condition.
Example 2
A method for manufacturing an ingan-zn-oxide schottky diode using a double layer palladium oxide contact according to example 1, which is different in that:
in the step (1), a Ti film is grown on a substrate as an ohmic electrode by using an electron beam evaporation plating method, comprising the steps of:
D. placing a substrate and a Ti metal source into an electron beam evaporation chamber, and vacuumizing;
E. a Ti film having a thickness of 30-100nm is evaporated on the substrate.
In the step (1), an IGZO thin film is grown on the ohmic electrode as the active layer using a magnetron sputtering method, comprising the steps of:
F. placing a Ti electrode sample and an IGZO ceramic target into a sputtering chamber, and vacuumizing;
G. setting the sputtering power to 50-100W, introducing O 2 And regulating the working pressure of the sputtering chamber to 3.30-4.00mTorr by using 0-5% of argon-oxygen mixed gas, and sputtering for 35 minutes, 43 seconds and 107 minutes to obtain the IGZO film with the thickness of about 50-200 nm.
Polished SiO with substrate of 100-300nm 2 /P + Si, the surface of the substrate is polished, and the surface is rough at near atomic level, which is beneficial to the formation of good Schottky junctions. The ohmic electrode is a Ti film with the thickness of 30-100nm, the active layer is an IGZO film with the thickness of 50-200nm, and the oxide PdO X PdO of 5-20nm x X is in the value range of 0-1, and the metal Pd is 20-100nm Pd.
Example 3
One of the methods according to example 2 uses sputtered Pd/PdO X Preparation of indium gallium zinc oxide by double-layer structureA method of schottky diode, which differs in that:
in step E, a Ti film having a thickness of 50nm is evaporated on the substrate. The adhesion with the substrate is good, and the roughness is atomic level, which is beneficial to forming ohmic contact.
In the step G, the sputtering power is set to be 70W, and O is introduced 2 And regulating the working pressure of a sputtering chamber to 3.58mTorr by using an argon-oxygen mixed gas with the content of 2.5%, and sputtering for 71 minutes and 25 seconds to obtain the IGZO film with the thickness of 100 nm.
At O 2 The IGZO is deposited under the condition of the argon-oxygen mixture gas with the content of 2.5%, so that the oxygen vacancy defect in the IGZO layer can be effectively reduced, carriers generated by the oxygen vacancy defect are reduced, and good Schottky contact is easier to form at an interface.
In step B, the sputtering power is set to 40W, and O is introduced 2 Regulating the working pressure of a sputtering chamber to 3.46mTorr by using an argon-oxygen mixture gas with the content of 25 percent, sputtering for 90 seconds, and generating oxide PdO with the thickness of 5nm on an active layer X 。
The palladium oxide prepared by the optimal value forms good Schottky contact with high potential barrier and close to 1 (1.03) by contact with the IGZO layer, and the working principle is that: the palladium oxide deposited on the IGZO contact layer fills the oxygen vacancy defect of the interface, reduces the carrier concentration at the interface, reduces the Schottky interface state density and the Fermi pinning effect caused by the Schottky interface state density, is more beneficial to forming high-quality Schottky contact, and has a work function larger than that of palladium metal, so that a larger Schottky barrier can be formed.
In the step C, the sputtering power is set to be 40W, pure Ar is introduced, the working air pressure of a sputtering chamber is regulated to be 3.75mTorr, the sputtering is carried out for 10min, and the oxide PdO is obtained X The metal Pd with the thickness of 45nm is formed on the upper surface. The continuous deposition of Pd metal on Pd metal oxide is beneficial to reducing the contact resistance between the probe and the metal during test and is convenient for probe penetration test.
In the step (3), the annealing is performed for 60min at 100 ℃ by using a Hotplate under the air environment. After air annealing at 100 ℃, the oxygen vacancy concentration of the IGZO layer is reduced, thereby reducing the oxygen vacancy concentration of the IGZO layer and the PdO x Carrier concentration at the contact surface of the layer is convenient for formingMeanwhile, the Schottky contact of the flexible substrate and the low-temperature annealing at 100 ℃ are within the tolerance range of the flexible substrate, and the flexible substrate has wide prospect in the field of flexible wearable electronics.
The substrate is polished SiO of 100nm 2 /P + Si, ohmic electrode is 50nm Ti film, active layer is 100nm IGZO film, oxide PdO X PdO at 5nm X The metal Pd was 45nm Pd. An AFM image of the IGZO film is shown in fig. 1. As can be seen from fig. 1, the surface roughness of the active layer of the sputtered IGZO film is 1.07nm, which can further embody the process universality of the method for preparing the high-performance schottky diode.
The adoption of the 100nm thick IGZO layer satisfies that the width of the intrinsic depletion region of the Schottky diode can form a good Schottky junction, and the 5nm PdOx and 45nm Pd can form enough oxide layers at the interface so as to be easier to establish a Schottky barrier, and can provide enough thickness for probe testing so as not to damage the device.
For magnetron sputtering double-layer PdO x Detecting, analyzing and characterizing the surface morphology and the electrical property of the IGZO Schottky diode; the surface morphology and roughness of the IGZO active layer were tested with an Atomic Force Microscope (AFM), and the electrical performance of the IGZO schottky diode was tested with an Agilent B2900 semiconductor analyzer and Agilent E4980A LCR mate.
The J-V curve of the InGaZn oxide Schottky diode prepared in the embodiment is shown in FIG. 3; as can be seen from FIG. 3, the IGZO SBD prepared in this example shows excellent rectification characteristics with a current-to-switch ratio of 10, with the voltage applied to the Schottky electrode of the Schottky diode on the abscissa and the current density (current divided by Schottky junction area) on the ordinate 7 The maximum on-current density at 1V forward voltage is 2.5A cm -2 。
A of the InGaZn oxide Schottky diode prepared in this example 2 /C 2 The V curve is shown in fig. 4; the abscissa is the voltage applied to the schottky electrode of the schottky diode and the ordinate is the square of the schottky area divided by the square of the schottky capacitance. As can be seen from FIG. 4, the IGZO SBD prepared in this example has a larger A 2 /C 2 Numerical values, which means that the device has fewer interface defects.
The breakdown curve of the indium gallium zinc oxide schottky diode prepared in the embodiment is shown in fig. 5; the abscissa is the voltage applied to the schottky electrode of the schottky diode and the ordinate is the current. As can be seen from fig. 5, the breakdown voltage is 12V, which reflects good schottky junction quality.
Table 1 shows various characteristic parameters of the IGZO SBD prepared in this example, the IGZO SBD exhibits excellent electrical properties, has a low ideality factor (1.03), a high rectification ratio (3.0X10) 7 ) Low series resistance (250.3 mΩ cm) 2 ) High J-V curve barrier height 0.85 eV), high C-V curve barrier height (0.97 eV), low background doping concentration (7.12X10) 16 cm -3 ) And a high breakdown voltage (-12.15V).
TABLE 1

Claims (9)

1. Pd/PdO sputtering method X The method for preparing the oxide semiconductor Schottky diode by the double-layer structure contact is characterized in that the oxide semiconductor Schottky diode is an indium gallium zinc oxide Schottky diode, and the oxide semiconductor Schottky diode sequentially comprises a substrate, an ohmic electrode, an active layer and Pd/PdO from bottom to top X Double-layer structure, X is 0 in value range<X<1，Pd/PdO X The double-layer structure sequentially comprises oxide PdO from bottom to top X Metal Pd, comprising the following steps:
(1) Sequentially growing the ohmic electrode and depositing the active layer on the substrate;
(2) Generating the Pd/PdO on the active layer using magnetron sputtering X The double-layer structure comprises the following steps:
A. placing the substrate and Pd target material which are generated in the step (1) and deposit the active layer into a sputtering chamber, and vacuumizing;
B. setting the sputtering power to30-100W, let in O 2 Argon-oxygen mixture with the content of 2.5-35 percent is introduced into the argon-oxygen mixture to form O 2 The volume ratio of the oxide PdO is kept between 3.45 and 4.00mTorr, and 5 to 20nm of oxide PdO is generated on the active layer X ；
C. Setting sputtering power to be 30-100W, introducing pure Ar, keeping the working air pressure of a sputtering chamber to be 3.55-4.10mTorr, and forming the oxide PdO X Generating 20-100nm of the metal Pd;
(3) Annealing for 60min at 100deg.C by using Hotplate under air environment.
2. A method according to claim 1 using sputtered Pd/PdO X A method for preparing an oxide semiconductor Schottky diode by double-layer structure contact is characterized in that in the step B, sputtering power is set to be 40W, and O is introduced 2 Regulating the working pressure of a sputtering chamber to 3.46mTorr by using an argon-oxygen mixture gas with the content of 25 percent, sputtering for 90 seconds, and generating the oxide PdO with the thickness of 5nm on the active layer X 。
3. A method according to claim 1 using sputtered Pd/PdO X The method for preparing the oxide semiconductor Schottky diode by the double-layer structure contact is characterized in that in the step C, the sputtering power is set to be 40W, pure Ar is introduced, the working pressure of a sputtering chamber is regulated to be 3.75mTorr, the sputtering is carried out for 10min, and the oxide PdO is obtained X The metal Pd with the thickness of 45nm is generated.
4. A method according to claim 1 using sputtered Pd/PdO X The method for preparing the oxide semiconductor Schottky diode by the double-layer structure contact is characterized in that in the step (1), a Ti film is grown on the substrate by using an electron beam evaporation coating method as the ohmic electrode, and the method comprises the following steps:
D. placing a substrate and a Ti metal source into an electron beam evaporation chamber, and vacuumizing;
E. evaporating a Ti film with the thickness of 30-100nm on the substrate.
5. A method according to claim 4, wherein the Pd/PdO is sputtered X The method for preparing the oxide semiconductor Schottky diode by the double-layer structure contact is characterized in that in the step E, a Ti film with the thickness of 50nm is evaporated on the substrate.
6. A method according to claim 4, wherein the Pd/PdO is sputtered X The method for preparing the oxide semiconductor schottky diode by the double-layer structure contact is characterized in that in the step (1), an IGZO film is grown on the ohmic electrode by using a magnetron sputtering method as the active layer, and the method comprises the following steps:
F. placing the Ti film and the IGZO ceramic target into a sputtering chamber, and vacuumizing;
G. setting the sputtering power to 50-100W, introducing O 2 And regulating the working pressure of a sputtering chamber to 3.30-4.00mTorr by using an argon-oxygen mixed gas with the content of 0-5%, and sputtering for 35 minutes, 43 seconds and 107 minutes to obtain the IGZO film with the thickness of 50-200 nm.
7. A method according to claim 6 using sputtered Pd/PdO X A method for preparing an oxide semiconductor Schottky diode by double-layer structure contact is characterized in that in the step G, sputtering power is set to be 70W, and O is introduced 2 And regulating the working pressure of a sputtering chamber to 3.58mTorr by using an argon-oxygen mixed gas with the content of 2.5%, and sputtering for 71 minutes and 25 seconds to obtain the IGZO film with the thickness of 100 nm.
8. A method according to claim 1 using sputtered Pd/PdO X A method for preparing an oxide semiconductor Schottky diode by double-layer structure contact is characterized in that the substrate is polished SiO of 100-300nm 2 /P + Si, the ohmic electrode is a Ti film of 30-100nm, the active layer is an IGZO film of 50-200nm, the oxide PdO X PdO of 5-20nm x The metal Pd is 20-100nm Pd.
9. A method according to any one of claims 1-8 using sputtered Pd/PdO X A method for preparing an oxide semiconductor Schottky diode by double-layer structure contact is characterized in that the substrate is polished SiO of 100nm 2 /P + Si, the ohmic electrode is a 50nm Ti film, the active layer is a 100nm IGZO film, the oxide PdO X PdO at 5nm X The metal Pd is 45nm Pd.
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