CN101577310A - Resistance transition type memory and manufacturing method thereof - Google Patents
Resistance transition type memory and manufacturing method thereof Download PDFInfo
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- CN101577310A CN101577310A CNA2009103029142A CN200910302914A CN101577310A CN 101577310 A CN101577310 A CN 101577310A CN A2009103029142 A CNA2009103029142 A CN A2009103029142A CN 200910302914 A CN200910302914 A CN 200910302914A CN 101577310 A CN101577310 A CN 101577310A
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- electric resistance
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- storage layer
- type memory
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Abstract
The invention relates to a resistance transition type memory and a manufacturing method thereof, belonging to the technical field of information storage. The memory comprises an upper electrode, a lower electrode and a resistance transition storage layer positioned between the upper electrode and the lower electrode, wherein, the upper electrode and the lower electrode are both made of materials with work function of 4.5-6 electron volts, and the resistance transition storage layer is a thin film made of P-type semiconductor binary metal oxides. The resistance transition type memory of the invention has simple structure, employs the materials with high work function to manufacture the upper electrode and the lower electrode, and uses the thin film made of the P-type semiconductor binary metal oxides as the resistance transition storage layer so that interfaces of the upper electrode, the lower electrode resistance transition storage layer can form ohmic contact or low Schottky contact and a memory device can realize the transition between high resistance state and low resistance state under low operating voltage, thus reducing the operating voltage of the memory device.
Description
Technical field
The present invention relates to a kind of memory and preparation method thereof, relate in particular to a kind of electric resistance transition type memory and preparation method thereof, belong to technical field of information storage.
Background technology
Popular gradually along with portable personal devices such as mobile phone, MP3, MP4 and notebook computers, non-volatility memorizer is being played the part of more and more important role in semicon industry, its biggest advantage is that the data of being stored when non-transformer is supplied still can be kept down for a long time, the characteristics of its existing ROM have very high access speed again.Non-volatility memorizer in the market is a main flow with flash memory (Flash) still.Along with the high-tech develop rapidly of numeral, the performance of memory is also had higher requirement, as high-speed, high density, low-power consumption, long-life and littler size etc.But the Flash storage component part exists, and operating voltage is excessive, service speed is slow, endurance is good inadequately and along with tunneling medium layer thin excessively in the device dimensions shrink process will cause shortcomings such as the device retention time falls short of.This has limited further developing of traditional flash memory to a certain extent.Therefore, be badly in need of a kind of brand-new Information Access technology of exploitation and solve above problem.
The novel non-volatility memorizer of having developed at present comprises: ferroelectric memory (FeRAM), magnetic memory (MRAM), phase transition storage (PRAM) and resistance-variable storing device (RRAM) are electric resistance transition type memory.In the middle of these memories, resistance-variable storing device since have simple device architecture, higher device density, lower power consumption, faster read or write speed, with the compatible advantage such as good of traditional cmos process, therefore receive much attention.Resistance-variable storing device is as a kind of novel non-volatility memorizer, is can realize reversiblely being converted to basic functional principle and as memory style between high-impedance state (HRS) and low resistance state (LRS) with the resistance of thin-film material.
Fig. 1 is the basic structure schematic diagram of prior art electric resistance transition type memory.As shown in Figure 1, between top electrode 101 and bottom electrode 103, be provided with electric resistance converting storage layer 102.The resistance value of electric resistance converting storage layer 102 can have two kinds of different states under the applied voltage effect, i.e. high-impedance state and low resistance state, and it can be used for characterizing " 0 " and " 1 " two states respectively.Under the effect of different applied voltages, but the resistance value of electric resistance transition type memory can realize inverse conversion between high-impedance state and low resistance state, realizes the function of information stores with this.
Fig. 2 has the current-voltage characteristic curve schematic diagram of the electric resistance transition type memory of one pole transfer characteristic in the ideal case for prior art.Described one pole conversion is meant that the transformation of resistance occurs on the identical polar.As shown in Figure 2, on positive direction or negative direction, increase to U when voltage
OnThe time, electric current sharply increases, and memistor changes low resistance state into by high-impedance state, and (Set) process promptly is set; When equidirectional voltage is U
OffThe time, electric current reduces rapidly, and memistor changes high-impedance state into by low resistance state, (Reset) process of promptly resetting.
Fig. 3 has the current-voltage characteristic curve schematic diagram of the electric resistance transition type memory of bipolar transfer characteristic in the ideal case for prior art.Described bipolar conversion is meant that the transformation of resistance occurs on the opposite polarity.As shown in Figure 3, line 201 to 203 expression resistance change the I-V curve of low resistance state into by high-impedance state, increase to U when voltage gradually since 0 to positive direction
OnThe time, electric current sharply increases, and shows that memistor changes low resistance state (Set process HRS → LRS) into by high-impedance state; Line 204 to 206 expression resistance change the I-V curve of high-impedance state into by low resistance state, increase to U when voltage gradually since 0 by negative direction
OffThe time, electric current reduces rapidly, and memistor changes high-impedance state (Reset process LRS → HRS) into by low resistance state.
The material system of resistance-variable storing device is varied, comprises PrCaMnO
3, strontium zirconate (SrZrO
3), strontium titanates (SrTiO
3) wait perovskite complex oxide, macromolecule organic material and simple binary transition group metallic oxide such as Al
2O
3, TiO2, NiO, ZrO
2, HfO
2Deng.Compare with other material, Dyadic transition group metallic oxide since have simple in structure, make low, and and the advantage of existing CMOS process compatible receive especially concern.For the resistance-variable storing device device, low operating voltage means littler power consumption, and the operating voltage that therefore how to reduce device is a urgent problem.
Summary of the invention
The present invention is directed to and how to reduce the operating voltage that resistance-variable storing device of the prior art is an electric resistance transition type memory, a kind of electric resistance transition type memory and preparation method thereof is provided.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of electric resistance transition type memory, comprise top electrode, bottom electrode and the electric resistance converting storage layer between described top electrode and bottom electrode, described top electrode and bottom electrode are that the material of 4.5 electronvolt～6 electronvolt is made by work function, the film of described electric resistance converting storage layer for being made by the P type semiconductor binary metal oxide.
Described top electrode is made by metal material or metal alloy compositions.
Further, described bottom electrode is made by metal material or metal alloy compositions.
Further, described metal material is Au, Co, Ir, Re, Pd or Pt.
Further, described metal alloy compositions is Ti-Pt, Co-Ni or Pt-Hf.
Further, described P type semiconductor binary metal oxide is Cu
2O, NiO, MoO
2, MnO, MnO
2, Bi
2O
3, VO
2Perhaps PdO.
Further, the thickness of described top electrode or bottom electrode respectively is 10 nanometers～300 nanometers, and the thickness of described electric resistance converting storage layer is 20 nanometers～200 nanometers.
The present invention also provides a kind of technical scheme that solves the problems of the technologies described above as follows: a kind of manufacture method of electric resistance transition type memory may further comprise the steps:
Step 1: forming work function on substrate is the bottom electrode of 4.5 electronvolt～6 electronvolt;
Step 2: on described bottom electrode, form a P type semiconductor binary metal oxide film as electric resistance converting storage layer;
Step 3: forming work function on described electric resistance converting storage layer is the top electrode of 4.5 electronvolt～6 electronvolt.
Described bottom electrode and top electrode are by physical vapor deposition and chemical vapor deposition and form, and described physical vapor deposition comprises electron beam evaporation or sputter.
Further, described electric resistance converting storage layer is for forming by electron beam evaporation, plasma enhanced chemical vapor deposition or ald.
The invention has the beneficial effects as follows: electric resistance transition type memory of the present invention simple in structure, adopt the higher material of work function to make top electrode and bottom electrode, and the film that employing P type semiconductor oxide is made is as electric resistance converting storage layer, make that top electrode can form ohmic contact with bottom electrode with the electric resistance converting storage layer interface or low Schottky contacts, so, therefore storage component part can reduce the operating voltage of storage component part in the transformation that just can realize under the lower operating voltage between high-impedance state and the low resistance state.The manufacture method of electric resistance transition type memory of the present invention is simple, and cost is low, and is good with traditional CMOS processing compatibility.
Description of drawings
Fig. 1 is the basic structure schematic diagram of prior art electric resistance transition type memory;
Fig. 2 has the current-voltage characteristic curve schematic diagram of the electric resistance transition type memory of one pole transfer characteristic in the ideal case for prior art;
Fig. 3 has the current-voltage characteristic curve schematic diagram of the electric resistance transition type memory of bipolar transfer characteristic in the ideal case for prior art;
Fig. 4 is the basic structure schematic diagram of the embodiment of the invention 1 electric resistance transition type memory;
Fig. 5 is the embodiment of the invention 2 electric resistance transition type memory manufacture method flow charts.
Embodiment
Below in conjunction with accompanying drawing principle of the present invention and feature are described, institute gives an actual example and only is used to explain the present invention, is not to be used to limit scope of the present invention.
Embodiment 1
Fig. 4 is the basic structure schematic diagram of embodiment of the invention electric resistance transition type memory.As shown in Figure 4, described electric resistance transition type memory comprises substrate 401, is arranged at the bottom electrode 402 on the substrate 401, is arranged at the electric resistance converting storage layer 403 on the bottom electrode 402, and is arranged at the top electrode 404 on the electric resistance converting storage layer 403.
Described substrate 401 is generally made by silicon dioxide, doping silicon dioxide or other insulating material.
It is that the material of 4.5 electronvolt～6 electronvolt is made that described bottom electrode 402 and top electrode 404 are work function.Described bottom electrode 402 and top electrode 404 can be the single-layer metal electrode that metals such as Au, Co, Ir, Re, Pd or Pt form, also can be the double-level-metal electrode of metal alloys such as Ti-Pt, Co-Ni or Pt-Hf formation, also can make simultaneously by other electric conducting materials with higher work-functions.The thickness of described bottom electrode 402 and top electrode 404 respectively is 10 nanometers～300 nanometers.The electrode material that is appreciated that described bottom electrode 402 and top electrode 404 can be identical, also can be different, as long as the work function of the electrode material that assurance is used is between 4.5 electronvolt～6 electronvolt.The thickness of described bottom electrode 402 and top electrode 404 can be identical, also can be different, as long as between 10 nanometers～300 nanometers.
The film of described electric resistance converting storage layer 403 for making by the semiconductor binary metal oxide of P type.Described P type semiconductor binary metal oxide is the binary metal oxide with P type semiconductor character.Described electric resistance converting storage layer 403 can be Cu
2O, NiO, MoO
2, MnO, MnO
2, Bi
2O
3, VO
2Perhaps binary metal oxide with P type semiconductor characteristic such as PdO is made, and also can make for the oxide with P type semiconductor characteristic that forms that mixes by difference.The thickness of described electric resistance converting storage layer 403 is 20 nanometers～200 nanometers.
Electric resistance transition type memory of the present invention simple in structure, adopt the higher material of work function to make top electrode and bottom electrode, and the film that employing P type semiconductor oxide is made is as electric resistance converting storage layer, make that top electrode can form ohmic contact with bottom electrode with the electric resistance converting storage layer interface or low Schottky contacts, make storage component part in the transformation that just can realize under the lower operating voltage between high-impedance state and the low resistance state, therefore can reduce the operating voltage of storage component part.
Embodiment 2
Fig. 5 is an embodiment of the invention electric resistance transition type memory manufacture method flow chart.As shown in Figure 5, described manufacture method may further comprise the steps:
Step 501: forming work function on substrate is the bottom electrode of 4.5 electronvolt～6 electronvolt.
Described bottom electrode can adopt physical vapor deposition or the formation of chemical vapor deposited method such as electron beam evaporation, sputter.
Step 502: on described bottom electrode, form a P type semiconductor binary metal oxide film as electric resistance converting storage layer.
Described electric resistance converting storage layer can adopt electron beam evaporation, plasma reinforced chemical vapor deposition (PECVD) or atomic layer deposition methods such as (ALD) to form.
Step 503: forming work function on described electric resistance converting storage layer is the top electrode of 4.5 electronvolt～6 electronvolt.
Described top electrode can adopt physical vapor deposition or the formation of chemical vapor deposited method such as electron beam evaporation, sputter.
The manufacture method of electric resistance transition type memory of the present invention is simple, and cost of manufacture is low, and is good with traditional CMOS processing compatibility.
The above only is preferred embodiment of the present invention, and is in order to restriction the present invention, within the spirit and principles in the present invention not all, any modification of being done, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. electric resistance transition type memory, comprise top electrode, bottom electrode and the electric resistance converting storage layer between described top electrode and bottom electrode, it is characterized in that, described top electrode and bottom electrode are that the material of 4.5 electronvolt～6 electronvolt is made by work function, the film of described electric resistance converting storage layer for being made by the P type semiconductor binary metal oxide.
2. electric resistance transition type memory according to claim 1 is characterized in that, described top electrode is made by in metal material and the metal alloy compositions one or both.
3. electric resistance transition type memory according to claim 1 is characterized in that, described bottom electrode is made by in metal material and the metal alloy compositions one or both.
4. according to claim 2 or 3 described electric resistance transition type memories, it is characterized in that described metal material is Au, Co, Ir, Re, Pd or Pt.
5. according to claim 2 or 3 described electric resistance transition type memories, it is characterized in that described metal alloy compositions is Ti-Pt, Co-Ni or Pt-Hf.
6. electric resistance transition type memory according to claim 1 is characterized in that, described P type semiconductor binary metal oxide is Cu2O, NiO, MoO2, MnO, MnO2, Bi2O3, VO2 or PdO.
7. electric resistance transition type memory according to claim 1 is characterized in that, the thickness of described top electrode or bottom electrode respectively is 10 nanometers～300 nanometers, and the thickness of described electric resistance converting storage layer is 20 nanometers～200 nanometers.
8. the manufacture method of an electric resistance transition type memory is characterized in that, this manufacture method may further comprise the steps:
Step 1: forming work function on substrate is the bottom electrode of 4.5 electronvolt～6 electronvolt; Step 2: on described bottom electrode, form a P type semiconductor binary metal oxide film as electric resistance converting storage layer; Step 3: forming work function on described electric resistance converting storage layer is the top electrode of 4.5 electronvolt～6 electronvolt.
9. the manufacture method of electric resistance transition type memory according to claim 8 is characterized in that, described bottom electrode and top electrode are by physical vapor deposition and chemical vapor deposition and form, and described physical vapor deposition comprises electron beam evaporation or sputter
10. the manufacture method of electric resistance transition type memory according to claim 8 is characterized in that, described electric resistance converting storage layer is for forming by electron beam evaporation, plasma enhanced chemical vapor deposition or ald.
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|---|---|---|---|
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|---|---|---|---|
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102237491A (en) * | 2010-05-06 | 2011-11-09 | 复旦大学 | Manganese oxide base resistance memory containing silicon doping and preparation method thereof |
| CN102487123A (en) * | 2010-12-06 | 2012-06-06 | 中国科学院微电子研究所 | Nanoscale non-volatile resistive random access memory unit and preparation method thereof |
| CN102610273A (en) * | 2011-12-22 | 2012-07-25 | 北京大学 | Method for reducing converted currents of resistive random access memories |
| CN102623045A (en) * | 2011-01-27 | 2012-08-01 | 中国科学院微电子研究所 | Resistive random access memory unit and resistive random access memory |
| WO2016208552A1 (en) * | 2015-06-26 | 2016-12-29 | 田中貴金属工業株式会社 | Platinum alloy target |
| CN106992192A (en) * | 2016-01-20 | 2017-07-28 | 中国科学院宁波材料技术与工程研究所 | A kind of photoelectric processing device |
| CN108796532A (en) * | 2017-05-03 | 2018-11-13 | 天津大学 | Nickel oxide-cuprous oxide homojunction photocathode and preparation method thereof and the application in photocatalysis |
| CN110165056A (en) * | 2019-04-12 | 2019-08-23 | 西交利物浦大学 | A kind of CTM memory and preparation method thereof |
| CN110890280A (en) * | 2019-11-27 | 2020-03-17 | 山东大学 | Method for preparing oxide semiconductor Schottky diode by using palladium/palladium oxide double-layer Schottky electrode |
-
2009
- 2009-06-04 CN CNA2009103029142A patent/CN101577310A/en active Pending
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102237491A (en) * | 2010-05-06 | 2011-11-09 | 复旦大学 | Manganese oxide base resistance memory containing silicon doping and preparation method thereof |
| CN102237491B (en) * | 2010-05-06 | 2013-06-12 | 复旦大学 | Manganese oxide base resistance memory containing silicon doping and preparation method thereof |
| CN102487123A (en) * | 2010-12-06 | 2012-06-06 | 中国科学院微电子研究所 | Nanoscale non-volatile resistive random access memory unit and preparation method thereof |
| CN102487123B (en) * | 2010-12-06 | 2013-11-06 | 中国科学院微电子研究所 | Nanoscale non-volatile resistive random access memory unit and preparation method thereof |
| CN102623045B (en) * | 2011-01-27 | 2014-10-29 | 中国科学院微电子研究所 | Resistive random access memory unit and memory |
| CN102623045A (en) * | 2011-01-27 | 2012-08-01 | 中国科学院微电子研究所 | Resistive random access memory unit and resistive random access memory |
| CN102610273B (en) * | 2011-12-22 | 2014-10-08 | 北京大学 | Method for reducing converted currents of resistive random access memories |
| CN102610273A (en) * | 2011-12-22 | 2012-07-25 | 北京大学 | Method for reducing converted currents of resistive random access memories |
| WO2016208552A1 (en) * | 2015-06-26 | 2016-12-29 | 田中貴金属工業株式会社 | Platinum alloy target |
| JP2017014536A (en) * | 2015-06-26 | 2017-01-19 | 田中貴金属工業株式会社 | Platinum alloy target |
| CN106992192A (en) * | 2016-01-20 | 2017-07-28 | 中国科学院宁波材料技术与工程研究所 | A kind of photoelectric processing device |
| CN108796532A (en) * | 2017-05-03 | 2018-11-13 | 天津大学 | Nickel oxide-cuprous oxide homojunction photocathode and preparation method thereof and the application in photocatalysis |
| CN110165056A (en) * | 2019-04-12 | 2019-08-23 | 西交利物浦大学 | A kind of CTM memory and preparation method thereof |
| CN110890280A (en) * | 2019-11-27 | 2020-03-17 | 山东大学 | Method for preparing oxide semiconductor Schottky diode by using palladium/palladium oxide double-layer Schottky electrode |
| CN110890280B (en) * | 2019-11-27 | 2024-02-06 | 山东大学 | Method for preparing oxide semiconductor Schottky diode by using palladium/palladium oxide double-layer Schottky electrode |
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Open date: 20091111 |