CN204332988U - A kind of extension wavelength indium gallium arsenic detector of composite passivated membrane structure - Google Patents

A kind of extension wavelength indium gallium arsenic detector of composite passivated membrane structure Download PDF

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Publication number
CN204332988U
CN204332988U CN201420770648.2U CN201420770648U CN204332988U CN 204332988 U CN204332988 U CN 204332988U CN 201420770648 U CN201420770648 U CN 201420770648U CN 204332988 U CN204332988 U CN 204332988U
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table top
micro
electrode
district
passivation
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唐恒敬
邵秀梅
李雪
石铭
杨靖
汤乃云
龚海梅
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Shanghai Institute of Technical Physics of CAS
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Shanghai Institute of Technical Physics of CAS
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Abstract

This patent discloses a kind of extension wavelength indium gallium arsenic detector of composite passivated membrane structure, specifically comprise: etching forms the micro-table top of p-type on epitaxial wafer; Micro-table top regional area prepares P electrode district, it is equipped with the electrode interconnection district of the micro-table top in cover part, and extend under micro-table top from micro-table top; The N groove being etched to N-shaped resilient coating is had in the side of micro-table top, and the upper N electrode district of preparation.Except P and N electrode district, whole epitaxial wafer is coated with layer compound passivation.The advantage of this patent is: Al 2o 3/ SiN xcomposite passivated membrane structure can realize the effective covering to micro-table top, promotes side passivation effect, reduces interface state density, the sensitivity of boost device; Al is prepared after high annealing 2o 3/ SiN xcomposite passivation film, avoids the outdiffusion of In element and the degeneration of film-insulated performance, improves the reliability of device.

Description

A kind of extension wavelength indium gallium arsenic detector of composite passivated membrane structure
Technical field
This patent relates to a kind of indium gallium arsenic detector, specifically refers to a kind of extension wavelength indium gallium arsenic detector of composite passivated membrane structure.
Background technology
According to response wave band In xga 1-xas detector can be divided into Lattice Matching and extension wavelength two class.Lattice Matching In xga 1-xthe In component x of As detector is 0.53, and now InGaAs epitaxial material is identical with InP substrate lattice constant, and response device cut-off wavelength is 1.7 μm; Increase In component x, extension wavelength In xga 1-xas detector can respond to 2.5 μm (In component x is 0.83).Wavelength extends the application greatly can expanding detector, but the increase of In component, can In be caused xga 1-xthe lattice mismatch of As and InP substrate.Extension wavelength In xga 1-xthis special construction of As material is had higher requirement to device technology method, the particularly surface of meas structure device and side passivation, because the side exposure of absorbed layer can introduce a large amount of interfacial state, which greatly limits the raising of device sensitivity, and bad surface and side passivation can make the reliability of device reduce.
At present, for extension wavelength In xga 1-xas detector, the main using plasma of passivating film strengthens the individual layer SiN that chemical vapour deposition (CVD) (PECVD) grows xstructure.The SiN of PECVD growth xpassivating film is at extension wavelength In xga 1-xas detector can realize good processing compatibility and device performance, but the film of PECVD method growth has following shortcoming: containing more protium, compactness is poor; Plasma power is large, causes interface state density to increase and device damage; Growth temperature is high, there is certain thermal stress between film and substrate.These factors limit the lifting of device sensitivity, and in usual device technology, SiNx film can experience the pyroprocess of alloying, causes the degeneration of the outdiffusion of In element in the semiconductor of interface and film-insulated performance, thus affects the reliability of device.
Summary of the invention
Based on above-mentioned extension wavelength In xga 1-xproblems existing in As detector passivation film structure, preparation method and device technology, the object of this patent is the mesa extension wavelength In proposing a kind of composite passivated membrane structure xga 1-xas detector chip, by ald (ALD) Al 2o 3passivation contact layer and low temperature inductively coupled plasma chemical vapour deposition (CVD) (ICPCVD) SiN xthe composite passivated membrane structure of passivation back-up coat reaches lifting passivation effect; By optimization technological process, first realize alloying, then growing mixed passivating film, solve the problem of the degeneration of In element outdiffusion and film-insulated performance, the reliability of boost device.Al prepared by ALD method 2o 3there is the advantages such as free of pinholes, density is high, step coverage, large area thickness evenness are good; ICPCVD method can produce larger plasma density, realizes SiN xpassivation back-up coat low-temperature epitaxy (being less than 75 DEG C), and plasma generating area and deposition region separately reduce the damage of plasma to substrate, and the directivity of plasma is controlled by direct current (DC) bias, can be good at the table top of filling high-aspect-ratio, the film hydrogen content of growth is little.
The mesa extension wavelength In of this patent xga 1-xas detector chip structure as shown in Figure 1, InP substrate 1 grows N-type InAlAs resilient coating 2, In successively xga 1-xas absorbed layer 3, P type InAlAs cap layers 4, P electrode district 5, electrode interconnection district 6, N electrode district 7, composite passivation film; P electrode district 5 is equipped with electrode interconnection district 6, this micro-table top in cover part, electrode interconnection district, and extends under micro-table top from micro-table top; Have in the side of micro-table top and be etched to n-InAlAs layer and the common electrode area be placed on n-InAlAs layer, i.e. N electrode district 7, except P electrode district 5 and N electrode district 7, the side whole epitaxial wafer comprising micro-table top is coated with Al 2o 3passivation contact layer 8 and SiN xpassivation back-up coat 9; It is detector light sensitive area 10 that table top is not covered electric region by pole interconnection layer.
Wherein:
The thickness of described N-type InAlAs resilient coating 21 μm to 2 μm, carrier concentration is greater than 2 × 10 18cm -3;
Described In xga 1-xthe thickness of As absorbed layer 3 is 1.5 μm to 2 μm, component 0.53<x≤0.83, carrier concentration 5 × 10 16cm -3to 1 × 10 17cm -3;
The thickness of described P type InAlAs cap layers 4 is 0.6 μm, and carrier concentration is greater than 2 × 10 18cm -3;
Described composite passivation film is by Al 2o 3passivation contact layer 8 and SiN xpassivation back-up coat 9 forms.
The preparation method of device is as follows: first by epitaxy technology by N-type InAlAs resilient coating 2, In xga 1-xas absorbed layer 3, P type InAlAs cap layers 4 are deposited in InP substrate 1 successively, then the micro-table top of p-InAlAs is formed by being etched on this p-InAlAs/i-InGaAs/n-InAlAs epitaxial wafer, the regional area of the micro-table top of p-InAlAs is prepared P electrode district 5, then rapid thermal annealing, forms ohmic contact; P electrode district 5 is equipped with electrode interconnection district 6, this micro-table top in cover part, electrode interconnection district, and extends under micro-table top from micro-table top; The N groove being etched to n-InAlAs layer is had in the side of micro-table top, and preparation thereon and N electrode district 7, except P electrode district 5 and N electrode district 7, whole epitaxial wafer comprises and covers by Al 2o 3passivation contact layer 8 and SiN xthe composite passivated membrane structure that passivation back-up coat 9 forms.
The advantage of this patent is:
1. adopt the ALD Al that density is high, uniformity is good 2o 3as passivation contact layer, the effective covering to micro-table top can be realized, promote side passivation effect, reduce Al 2o 3/ In xga 1-xthe surface charge density at As interface and interface state density, and then reduce dark current, improve extension wavelength In xga 1-xthe responsiveness of As detector and detectivity.
2. adopt SiN prepared by ICPCVD method xas passivation back-up coat, compactness is good, and side/surface thickness is than high, and good insulation preformance, can realize and Al 2o 3and the Stress match of semi-conducting material, play the effect of anti-reflection film, the responsiveness of boost device and reliability simultaneously.
3, Al in device technology 2o 3/ SiN xafter composite passivation film preparation technology is placed at alloying technology, avoid pyroprocess to cause the degeneration of the outdiffusion of In element and film-insulated performance, improve the reliability of device.
Accompanying drawing explanation
Fig. 1 is extension wavelength In xga 1-xthe cross-sectional view of As detector;
Fig. 2 is extension wavelength In xga 1-xthe vertical view of As detector;
Fig. 3 is the processing step flow chart of this patent.
In figure:
1---InP substrate;
2---N-type InAlAs resilient coating;
3---In xga 1-xas absorbed layer;
4---P type InAlAs cap layers;
5---P electrode district;
6---electrode interconnection district;
7---N electrode district;
8---Al 2o 3passivation contact layer;
9---SiN xpassivation back-up coat;
10---light sensitive area.
Embodiment
Be described in further detail below in conjunction with the specific implementation method of drawings and Examples to this patent.
Fig. 1 is the cross-sectional view of the present embodiment.The present embodiment epitaxial wafer used is be that in the semi-insulating InP substrate 1 of 350 μm, growth thickness is the N-type InAlAs resilient coating 2 of 1 μm to 2 μm successively at thickness by MBE technology, and carrier concentration is greater than 2 × 10 18cm -3; Thickness is the In of 1.5 μm to 2 μm xga 1-xas absorbed layer 3 (0.53<x≤0.83), carrier concentration 2 × 10 18cm -3to 1 × 10 17cm -3; Thickness is the P type InAlAs cap layers 4 of 0.6 μm, and carrier concentration is greater than 2 × 10 18cm -3.
Epitaxial wafer forms the micro-table top of p-InAlAs by etching, the regional area of the micro-table top of p-InAlAs is prepared P electrode district 5, then rapid thermal annealing, form ohmic contact; P electrode district 5 is equipped with electrode interconnection district 6, this micro-table top in cover part, electrode interconnection district, and extends under micro-table top from micro-table top; Have in the side of micro-table top and be etched to n-InAlAs layer and the common electrode area be placed on n-InAlAs layer, i.e. N electrode district 7, except P electrode district 5 and N electrode district 7, the side whole epitaxial wafer comprising micro-table top is coated with Al 2o 3passivation contact layer 8 and SiN xpassivation back-up coat 9; It is detector light sensitive area 10 that table top is not covered electric region by pole interconnection layer.
The detector chip of the present embodiment is prepared specific embodiment and is:
1 epitaxial wafer material clean, adopt chloroform, ether, acetone, MOS level ethanol purge successively, nitrogen dries up;
2 deposit SiN xetch mask: adopt PECVD skill deposition thickness to be the SiN of 300nm x, underlayer temperature is 300 DEG C ~ 330 DEG C, RF power is 40W ~ 50W, gas flow is SiH 4: N 2=50mL/min:900mL/min;
3 open etching window: adopt inductively coupled plasma (ICP) to etch SiN x, etching condition is: ICP power is 2000W, RF power is 35W, SF 6gas flow is 45sccm, chamber pressure is 9mTorr, temperature is 5 DEG C, then at room temperature corrodes 5s with buffered hydrofluoric acid solution;
4 micro-table tops are shaping: adopt ICP mesa etch, etching condition is: ICP power 350W, RF power 130W, Cl 2: N 2=10sccm:60sccm, operating air pressure 10mTorr, temperature 170 DEG C; Then concentration is adopted to be 5%H 3pO 4corrosion 5s;
5 open N electrode groove: after photoetching, adopt 50% tartaric acid solution: H 2o 2=5:1 selective corrosion solution wet chemical etching technique In xga 1-xas absorbed layer;
6 remove etch mask: remove diffusion mask, and adopt buffered hydrofluoric acid solution wet etching, corrosive liquid proportioning is identical with step 4;
7 growth p-electrode: positive glue photoetching, dry 20 minutes of rear baking 65 DEG C, then Ti/Pt/Au (20/30/20nm) electrode district 5 of electron beam evaporation growth and p-InGaAs ohmic contact;
8 rapid thermal annealings: the condition of process is 420 DEG C, time 45s;
9ALD deposit Al 2o 3: adopt ALD method deposit Al 2o 3, growth temperature 200 DEG C, process gas flow is argon gas 400sccm, and pulse parameter is 0.1ms/1s/0.3ms/1s, and source adopts trimethyl aluminium (TMA) and water (H 2o), grow 88 circulations, growth thickness is 10nm;
10ICPCVD deposit SiN x: adopt ICPCVD method growth SiN xpassivation back-up coat 9, growth thickness is determined according to response wave band, for the extension wavelength In of In component x=0.83 xga 1-xas detector, SiN xthe Thickness Design of passivation back-up coat 9 is 260nm, and growth conditions is: ICP power is 750W, underlayer temperature 75 DEG C, RF power are 0W, pressure 12mTorr, gas flow SiH 4: N 2=12.5sccm:15.5sccm;
11 open P, N electrode hole: adopt ICP to etch Ti/Pt/A uwith the SiN under N electrode district 7 on electrode district 5 xpassivation back-up coat 9, etching condition is: ICP power is 2000W, RF power is 35W W, SF 6gas flow is 45sccm, chamber pressure is 9mTorr, temperature is 5 DEG C, then at room temperature corrodes 5s with buffered hydrofluoric acid solution; Employing concentration is 5%H 3pO 4with the Al under N electrode district 7 on corrosion ICP etching Ti/Pt/Au electrode district 5 2o 3passivation contact layer 8, etching time is 6 ~ 8 minutes;
12 deposits add thick electrode: after positive glue photoetching, adopt ion beam sputtering growth Cr/Au N electrode district 7 and electrode interconnect layers 6, first use Ar before growth +auxiliary source cleans 3 minutes, and growth thickness is 20nm/400nm;
13 floating glue: acetone floats glue, ethanol purge, and nitrogen dries up;
14 scribings: scribing, the extension wavelength In of composite passivated membrane structure xga 1-xprepared by As detector chip, see Fig. 2.

Claims (1)

1. an extension wavelength indium gallium arsenic detector for composite passivated membrane structure, its structure is: in semi-insulated InP substrate (1), grow N-type InAlAs resilient coating (2), In successively xga 1-xas absorbed layer (3), P type InAlAs cap layers (4), P electrode district (5), electrode interconnection district (6), N electrode district (7) and composite passivation film, is characterized in that:
The thickness of described N-type InAlAs resilient coating (2) 1 μm to 2 μm;
Described In xga 1-xthe thickness of As absorbed layer (3) is 1.5 μm to 2 μm;
The thickness of described P type InAlAs cap layers (4) is 0.6 μm;
Described composite passivation film is by Al 2o 3passivation contact layer (8) and SiN xpassivation back-up coat (9) forms;
P electrode district (5) is equipped with electrode interconnection district (6), this micro-table top in cover part, electrode interconnection district, and extends under micro-table top from micro-table top; Have in the side of micro-table top and be etched to N-type InAlAs resilient coating (2) and the common electrode area being placed in N-type InAlAs resilient coating (2), i.e. N electrode district (7), except P electrode district (5) and N electrode district (7), the side whole epitaxial wafer comprising micro-table top is coated with Al 2o 3passivation contact layer (8) and SiN xpassivation back-up coat (9); It is detector light sensitive area (10) that table top is not covered electric region by pole interconnection layer.
CN201420770648.2U 2014-12-09 2014-12-09 A kind of extension wavelength indium gallium arsenic detector of composite passivated membrane structure Withdrawn - After Issue CN204332988U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104538478A (en) * 2014-12-09 2015-04-22 中国科学院上海技术物理研究所 Wavelength extending indium gallium arsenic detector of composite passive film structure and manufacturing method
CN110224045A (en) * 2019-07-16 2019-09-10 中国科学院上海技术物理研究所 A kind of preparation method of flexibility InGaAs detector

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104538478A (en) * 2014-12-09 2015-04-22 中国科学院上海技术物理研究所 Wavelength extending indium gallium arsenic detector of composite passive film structure and manufacturing method
CN110224045A (en) * 2019-07-16 2019-09-10 中国科学院上海技术物理研究所 A kind of preparation method of flexibility InGaAs detector
CN110224045B (en) * 2019-07-16 2021-06-15 中国科学院上海技术物理研究所 Preparation method of flexible InGaAs detector

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