CN110224045B - Preparation method of flexible InGaAs detector - Google Patents
Preparation method of flexible InGaAs detector Download PDFInfo
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- CN110224045B CN110224045B CN201910411821.7A CN201910411821A CN110224045B CN 110224045 B CN110224045 B CN 110224045B CN 201910411821 A CN201910411821 A CN 201910411821A CN 110224045 B CN110224045 B CN 110224045B
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- 229910000530 Gallium indium arsenide Inorganic materials 0.000 title claims abstract description 43
- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- 239000010410 layer Substances 0.000 claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 11
- 239000002356 single layer Substances 0.000 claims abstract description 9
- 239000002390 adhesive tape Substances 0.000 claims abstract description 7
- 238000010521 absorption reaction Methods 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 5
- 230000006911 nucleation Effects 0.000 claims description 5
- 238000010899 nucleation Methods 0.000 claims description 5
- 238000002161 passivation Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 abstract description 17
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 2
- 238000011982 device technology Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 7
- 238000004891 communication Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 238000011112 process operation Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 238000013480 data collection Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000004297 night vision Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
- H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a preparation method of a flexible InGaAs detector, which comprises the following steps: and covering a single layer of graphene on the InP substrate, then growing an InGaAs detector structure material, preparing the InGaAs detector structure, and finally stripping the InGaAs detector structure from the InP substrate. The invention can conveniently carry out the growth of high-quality InP and InGaAs epitaxial layers; the substrate is reserved in the process of the device preparation technology, so that great convenience is brought to the device technology operation; the preparation method has the advantages that the characteristic of single-layer graphene is utilized, the heat release adhesive tape can be conveniently stripped from the substrate, and therefore the preparation of the flexible InGaAs detector is achieved. The invention can also be popularized to the preparation of other flexible III-V semiconductor devices and has good universality.
Description
Technical Field
The invention belongs to the field of semiconductor optoelectronic devices, and particularly relates to a preparation method of a flexible InGaAs detector.
Background
There are many important applications for the near infrared band. For example, silica fiber is in the low loss and low dispersion windows at 1.31 microns and 1.55 microns, respectively, and lasers and detectors at these two wavelengths are widely used in long wave fiber communication. The InGaAs detector is widely applied to optical fiber communication systems due to its good performance, and plays an important role in the current information age. The research of the detector for optical communication mainly focuses on the response speed of the device, so that structures such as a waveguide type PIN detector, an MSM structure, an APD, a WG-APD, an RCE-PIN and an RCE-APD are correspondingly developed on the basis of optimizing the traditional PIN type structure. In addition, the InGaAs detector has wide application in the fields of quantum communication, laser radar, infrared remote sensing, gas detection, night vision observation and the like.
With the urgent growth of demands for smart detection, smart sensing, big data collection, smart medical treatment, etc., wearable flexible infrared detectors are needed in numerous fields. Based on the application target, flexible infrared detectors made of various materials, such as organic materials, quantum dot materials, carbon fiber materials and the like, are developed. The flexible detector made of different materials has advantages and disadvantages in the aspects of device performances such as detectivity and sensitivity, bendability and ductility. The infrared detector prepared based on the traditional III-V group semiconductor material has the advantages of high detection rate, high sensitivity and the like, but the III-V group semiconductor material is difficult to be directly prepared on the flexible substrate and needs to be transferred to the flexible substrate after being prepared on the semiconductor substrate. This puts high demands on the preparation technology, which greatly increases the preparation difficulty.
A commonly used method is to use an etch stop layer, which is inserted between the substrate and the device layer, and then the substrate is etched away by wet etching, and the substrate is stopped at the etch stop layer. Another method is to grow a layer of AlAs sacrificial layer material between the substrate and the device layer, and to detach the device structure from the substrate after selectively etching off the AlAs sacrificial layer by hydrofluoric acid. However, for flexible InGaAs detectors, the etching of the substrate in the first method is time-consuming, labor-consuming, and also not economical and environmentally friendly, and it is necessary to protect InP in the device structure from etching during the etching of the substrate; in the second method, many dislocations are generated in the epitaxial layer due to the great lattice mismatch between AlAs and InP and InGaAs materials, which greatly affects the quality of the materials and devices.
Disclosure of Invention
The invention aims to solve the technical problem of providing a preparation method of a flexible InGaAs detector, wherein the detector structure is that an InP lower contact layer, an InGaAs absorption layer and an InP upper contact layer are sequentially arranged on an InP nucleating layer, the InP upper contact layer and the InP lower contact layer are provided with contact electrodes, and the side faces of the InP upper contact layer and the InP lower contact layer are coated with a passivation film. Through single-layer graphene on the InP substrate, a potential field of the InP substrate can be used for growing high-quality InP and InGaAs epitaxial layers; the substrate and the device structure are not separated in the device preparation process, so that the device process operation is facilitated; meanwhile, the graphene isolates chemical bonds of materials on two sides, so that the stripping can be conveniently carried out, and the preparation of the flexible InGaAs detector is realized. The method specifically comprises the following steps:
(1) covering a single-layer graphene on the InP substrate;
(2) growing an InP nucleating layer at low temperature by adopting a molecular beam epitaxy method;
(3) heating the substrate to a growth temperature, and sequentially growing an InP lower contact layer, an InGaAs absorption layer and an InP upper contact layer;
(4) preparing a detector structure by using a device preparation process;
(5) and stripping the detector structure from the substrate by using a heat release adhesive tape to finish the preparation of the flexible InGaAs detector.
The growth temperature of the InP nucleation layer grown at the low temperature in the step (2) is 300-350 ℃, and the thickness is 50-200 nm.
The growth temperature in the step (3) is 500 ℃ for the InP lower contact layer and the InP upper contact layer and 550 ℃ for the InGaAs absorption layer.
Advantageous effects
According to the invention, the InGaAs detector structure material is grown through the single-layer graphene on the InP substrate, and the potential field penetration effect of the InP substrate is utilized to conveniently grow the high-quality InP and InGaAs epitaxial layers; in the process of device preparation, the substrate and the InGaAs detector device structure are kept together, which brings great convenience to device process operation; due to the fact that chemical bonds of materials on two sides are isolated by the graphene, the flexible InGaAs detector can be conveniently stripped by the aid of the heat release adhesive tape, and the flexible InGaAs detector is manufactured. The invention can also be popularized to the preparation of other flexible III-V semiconductor devices and has good universality.
Drawings
FIG. 1 is a flow chart of a method for fabricating a flexible InGaAs detector of the present invention;
FIG. 2 is a diagram of the epitaxial material structure of the flexible InGaAs detector of the present invention;
FIG. 3 is a schematic diagram of the device structure of the flexible InGaAs detector of the invention after fabrication by a device process;
fig. 4 is a schematic diagram of the final device structure of the flexible InGaAs detector of the present invention.
Detailed Description
The invention will be further illustrated with reference to the following specific examples. It should be understood that these examples are for illustrative purposes only and are not intended to limit the scope of the present invention. Further, it should be understood that various changes or modifications of the present invention may be made by those skilled in the art after reading the teaching of the present invention, and such equivalents may fall within the scope of the present invention as defined in the appended claims.
Example 1
This example 1 illustrates a method for manufacturing a flexible InGaAs detector according to the present invention, which includes the following steps:
(1) transferring a single-layer graphene material on an InP substrate;
(2) growing the undoped InP nucleation layer at low temperature by adopting a molecular beam epitaxy method, wherein the growth temperature is 300 ℃, the growth rate is 300nm/h, and the growth thickness is 50 nm;
(3) heating the substrate to 450 deg.C, growing a 1 μm thick silicon doped n-type InP lower contact layer with a doping concentration of 2 × 1018cm-3The growth rate is 1 mu m/h; then heating to 500 ℃, and growing a 2-micron-thick undoped InGaAs absorption layer at the growth rate of 1 micron/h; cooling to 450 deg.C, growing 0.6 μm thick beryllium-doped p-type InP upper contact layer with doping concentration of 2 × 1018cm-3；
(4) A mesa detector structure is obtained by photoetching and etching, a silicon nitride passivation film is grown by an inductively coupled plasma-chemical vapor deposition method, and an upper contact electrode and a lower contact electrode are evaporated by an electron beam to prepare a detector device structure.
(5) And stripping the detector structure from the substrate by using a heat release adhesive tape, thereby completing the preparation of the flexible InGaAs detector.
Example 2
This example 2 illustrates a method for manufacturing a flexible InGaAs detector, which includes the following steps:
(1) covering a single-layer graphene material on the InP substrate through epitaxy;
(2) growing the undoped InP nucleation layer at a low temperature of 320 ℃, at a growth rate of 200nm/h and at a growth thickness of 80nm by adopting a molecular beam epitaxy method;
(3) heating the substrate to 480 ℃, growing a beryllium-doped p-type InP lower contact layer with the thickness of 0.5 mu m and the doping concentration of 3 multiplied by 1018cm-3The growth rate is 0.9 mu m/h; then heating to 520 ℃, growing a 2.5 mu m thick undoped InGaAs absorption layer with the growth rate of 1.1 mu m/h; cooling to 480 deg.C, growing 0.5 μm thick silicon-doped n-type InP upper contact layer with doping concentration of 3 × 1018cm-3；
(4) A mesa detector structure is obtained by photoetching and etching, a silicon nitride passivation film is grown by an inductively coupled plasma-chemical vapor deposition method, and an upper contact electrode and a lower contact electrode are evaporated by an electron beam to prepare a detector device structure.
(5) And stripping the detector structure from the substrate by using a heat release adhesive tape, thereby completing the preparation of the flexible InGaAs detector.
Example 3
This embodiment 3 illustrates a method for manufacturing a flexible InGaAs detector, which includes the following steps:
(1) transferring a single-layer graphene material on an InP substrate;
(2) growing the undoped InP nucleation layer at a low temperature of 350 ℃ by adopting a molecular beam epitaxy method, wherein the growth rate is 400nm/h, and the growth thickness is 200 nm;
(3) heating the substrate to 500 deg.C, growing a 0.8 μm thick silicon doped n-type InP lower contact layer with a doping concentration of 2 × 1018cm-3The growth rate is 0.8 mu m/h; then heating to 550 ℃, growing a 2.5 mu m thick silicon lightly doped n-type InGaAs absorption layer with the doping concentration of 1 multiplied by 1016cm-3The growth rate is 1 mu m/h; cooling to 500 deg.C, growing 0.5 μm thick beryllium-doped p-type InP upper contact layer with doping concentration of 3 × 1018cm-3；
(4) A mesa detector structure is obtained by photoetching and etching, a silicon nitride passivation film is grown by an inductively coupled plasma-chemical vapor deposition method, and an upper contact electrode and a lower contact electrode are evaporated by an electron beam to prepare a detector device structure.
(5) And stripping the detector structure from the substrate by using a heat release adhesive tape, thereby completing the preparation of the flexible InGaAs detector.
Claims (1)
1. A preparation method of a flexible InGaAs detector is characterized in that an InP lower contact layer, an InGaAs absorption layer and an InP upper contact layer are sequentially arranged on an InP nucleating layer, the InP upper contact layer and the InP lower contact layer are provided with contact electrodes, and the side faces of the InP upper contact layer and the InP lower contact layer are coated with passivation films, and the preparation method comprises the following steps:
(1) covering a single-layer graphene on the InP substrate;
(2) growing an InP nucleating layer at low temperature by adopting a molecular beam epitaxy method; the growth temperature of the InP nucleation layer grown at low temperature is 300-350 ℃, and the thickness is 50-200 nm;
(3) heating the substrate to a growth temperature, and sequentially growing an InP lower contact layer, an InGaAs absorption layer and an InP upper contact layer; the growth temperature is 450-550 ℃ for the InP lower contact layer and the InP upper contact layer, and 500-550 ℃ for the InGaAs absorption layer;
(4) preparing a detector structure by using a device preparation process;
(5) and stripping the detector structure from the substrate by using a heat release adhesive tape to finish the preparation of the flexible InGaAs detector.
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