CN110224045A - A kind of preparation method of flexibility InGaAs detector - Google Patents
A kind of preparation method of flexibility InGaAs detector Download PDFInfo
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- CN110224045A CN110224045A CN201910411821.7A CN201910411821A CN110224045A CN 110224045 A CN110224045 A CN 110224045A CN 201910411821 A CN201910411821 A CN 201910411821A CN 110224045 A CN110224045 A CN 110224045A
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- 229910000530 Gallium indium arsenide Inorganic materials 0.000 title claims abstract description 42
- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- 239000010410 layer Substances 0.000 claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 34
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 11
- 239000002356 single layer Substances 0.000 claims abstract description 9
- 239000002390 adhesive tape Substances 0.000 claims abstract description 7
- 206010040844 Skin exfoliation Diseases 0.000 claims abstract description 6
- 230000035618 desquamation Effects 0.000 claims abstract description 6
- 238000005516 engineering process Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 15
- 238000000407 epitaxy Methods 0.000 claims description 7
- 238000010792 warming Methods 0.000 claims description 5
- 238000005253 cladding Methods 0.000 claims 1
- 238000002161 passivation Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 18
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 238000011982 device technology Methods 0.000 abstract description 3
- 238000005530 etching Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 239000000835 fiber Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910052790 beryllium Inorganic materials 0.000 description 3
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000013480 data collection Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000004297 night vision Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
- H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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- Manufacturing & Machinery (AREA)
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Abstract
The invention discloses a kind of preparation methods of flexibility InGaAs detector: single-layer graphene is covered in InP substrate, then regrowth InGaAs panel detector structure material and preparation InGaAs panel detector structure, finally remove InGaAs panel detector structure and InP substrate.The present invention carries out the growth of high quality InP and InGaAs epitaxial layer in which can be convenient；Substrate is remained during device preparation technology, is brought great convenience for device technology operation；Adhesive tape and substrate desquamation are discharged using heat with can be convenient using the characteristic of single-layer graphene, to realize the preparation of flexible InGaAs detector.The present invention can also be generalized in the preparation of other flexible Group III-V semiconductor devices, have good versatility.
Description
Technical field
The invention belongs to semiconductor photoelectronic device field, in particular to a kind of preparation side of flexibility InGaAs detector
Method.
Background technique
There are many important applications near infrared band.For example, silica fibre is respectively in 1.31 microns and 1.55 microns
Low-loss and low dispersion window, the laser and detector of the two wavelength are widely used in long wave fiber optic communication.
InGaAs detector is sent out in the current information age since its good performance to be widely applied in fiber optic communication systems
Wave its important function.The response speed of the research main sides treasure part of optic communication detector, therefore people are to traditional
On the basis of PIN type structure optimization, developed accordingly such as waveguide type PIN detector, MSM structure, APD, WG-APD, RCE-
The structures such as PIN and RCE-APD.Furthermore InGaAs detector is in quantum communications, laser radar, infrared remote sensing, gas detection, night vision
The multiple fields such as observation also have a wide range of applications.
With the urgent growth of the demands such as wisdom detection, intelligent sensing, big data collection, intelligent medical treatment, numerous fields
Need wearable flexible infrared detector.Based on this application target, it is infrared to be developed the flexibility that multiple material is prepared
Detector, for example, by using organic material, quanta point material, carbon fibre material etc..The flexible detection being prepared by different materials
Device the device performances such as detectivity, sensitivity and flexible, in terms of respectively have advantage and disadvantage.Based on traditional iii-v
The infrared detector that semiconductor material is prepared has many advantages, such as that detectivity is high, high sensitivity, but Group III-V semiconductor material
Material is difficult to directly prepare on flexible substrates, is transferred in flexible substrate after the completion of needing to prepare on a semiconductor substrate.This is right
The technology of preparation proposes very high requirement, so that preparation difficulty greatly increases.
General common method is the method using etch stop layers, and one layer of corrosion is inserted between substrate and device layer and is cut
Only layer, later use wet etching fall substrate etching, and end at etch stop layers.Another method be in substrate and
One layer of AlAs sacrificial layer material is grown between device layer, using hydrofluoric acid selective etching fall after AlAs sacrificial layer by device architecture with
Substrate disengages.But for flexible InGaAs detector, the corrosion of substrate takes time and effort also uneconomical in first method
Environmental protection, and the InP protected in device architecture during substrate etching is needed not to be corroded；In second method due to
AlAs and the great lattice mismatch of InP and InGaAs material to generate many dislocations in the epitaxial layer, largely effect on material and
The quality of device.
Summary of the invention
Technical problem to be solved by the invention is to provide a kind of preparation method of flexibility InGaAs detector, the spies
Surveying device structure is the successively upper contact layer of contact layer, InGaAs absorbed layer and InP under InP on InP nucleating layer, the upper contact layer of InP with
Lower contact layer has contact electrode, and side coats passivating film.Through the single-layer graphene in InP substrate, the gesture of InP substrate is utilized
Field can grow high quality InP and InGaAs epitaxial layer；Substrate and device architecture are without departing from side during device preparation technology
Closet part technological operation；Simultaneously because graphene has completely cut off the chemical bond of two layers of material, removed with can be convenient, is realized soft
The preparation of property InGaAs detector.Specifically comprise the following steps:
(1) single-layer graphene is covered in InP substrate；
(2) molecular beam epitaxial method low-temperature epitaxy InP nucleating layer is used；
(3) substrate is warming up to growth temperature, successively contact layer, InGaAs absorbed layer, the upper contact layer of InP under grown InP；
(4) panel detector structure is prepared using device preparation technology；
(5) adhesive tape is discharged for panel detector structure from substrate desquamation using heat, completes the preparation of flexibility InGaAs detector.
The growth temperature of low-temperature epitaxy InP nucleating layer described in step (2) is 300-350 DEG C, with a thickness of 50-200nm.
Growth temperature described in step (3) is 450-500 DEG C for contact layer on contact layer under InP and InP, for
InGaAs absorbed layer is 500-550 DEG C.
Beneficial effect
The present invention grows InGaAs panel detector structure material through the single-layer graphene in InP substrate, utilizes InP substrate
Potential field penetration carries out the growth of high quality InP and InGaAs epitaxial layer in which can be convenient；During device preparation technology,
Substrate is retained in together with InGaAs detector device architecture, is brought great convenience for device technology operation；Due to graphene
The chemical bond for having completely cut off two layers of material is removed using heat release adhesive tape, realizes flexibility InGaAs detector in which can be convenient
Preparation.The present invention can also be generalized in the preparation of other flexible Group III-V semiconductor devices, have good versatility.
Detailed description of the invention
Fig. 1 is the preparation method flow chart of flexible InGaAs detector of the invention；
Fig. 2 is flexible InGaAs detector epitaxial material structure figure of the invention；
Fig. 3 is that flexible InGaAs detector of the invention is utilizing the device architecture schematic diagram after device technology preparation；
Fig. 4 is the final device architecture schematic diagram of flexible InGaAs detector of the invention.
Specific embodiment
Present invention will be further explained below with reference to specific examples.It should be understood that these embodiments are merely to illustrate the present invention
Rather than it limits the scope of the invention.In addition, it should also be understood that, after reading the content taught by the present invention, those skilled in the art
Member can make various changes or modifications the present invention, and such equivalent forms equally fall within the application the appended claims and limited
Range.
Embodiment 1
A kind of flexibility InGaAs detector preparation method that the present embodiment 1 illustrates the present invention, the specific steps are as follows:
(1) upper single-layer graphene material is shifted in InP substrate；
(2) the InP nucleating layer to be undoped using molecular beam epitaxial method low-temperature epitaxy, 300 DEG C of growth temperature, growth rate
300nm/h, growth thickness 50nm；
(3) substrate is warming up to 450 DEG C, 1 μ m-thick silicon of growth adulterates contact layer under N-shaped InP, doping concentration 2 × 1018cm-3, 1 μm/h of growth rate；500 DEG C are then heated to, the undoped InGaAs absorbed layer of 2 μ m-thicks, 1 μm/h of growth rate are grown；Drop
Temperature grows contact layer on 0.6 μ m-thick beryllium doped p type InP, doping concentration 2 × 10 to 450 DEG C18cm-3；
(4) mesa panel detector structure is obtained using lithography and etching, utilizes inductively coupled plasma-chemical vapor deposition
Product method grown silicon nitride passivating film contacts electrode up and down using electron beam evaporation, prepares detector device architecture.
(5) adhesive tape is discharged for panel detector structure from substrate desquamation, to complete the system of flexible InGaAs detector using heat
It is standby.
Embodiment 2
A kind of flexibility InGaAs detector preparation method that the present embodiment 2 illustrates the present invention, the specific steps are as follows:
(1) upper single-layer graphene material is covered by extension in InP substrate；
(2) it is undoped InP nucleating layer using molecular beam epitaxial method low-temperature epitaxy, 320 DEG C of growth temperature, growth rate
200nm/h, growth thickness 80nm；
(3) substrate is warming up to 480 DEG C, grows contact layer under 0.5 μ m-thick beryllium doped p type InP, doping concentration 3 ×
1018cm-3, 0.9 μm/h of growth rate；520 DEG C are then heated to, the undoped InGaAs absorbed layer of 2.5 μ m-thicks, growth speed are grown
1.1 μm/h of rate；480 DEG C are cooled to, 0.5 μ m-thick silicon of growth adulterates contact layer on N-shaped InP, doping concentration 3 × 1018cm-3；
(4) mesa panel detector structure is obtained using lithography and etching, utilizes inductively coupled plasma-chemical vapor deposition
Product method grown silicon nitride passivating film contacts electrode up and down using electron beam evaporation, prepares detector device architecture.
(5) adhesive tape is discharged for panel detector structure from substrate desquamation, to complete the system of flexible InGaAs detector using heat
It is standby.
Embodiment 3
A kind of flexibility InGaAs detector preparation method that the present embodiment 3 illustrates the present invention, the specific steps are as follows:
(1) upper single-layer graphene material is shifted in InP substrate；
(2) it is undoped InP nucleating layer using molecular beam epitaxial method low-temperature epitaxy, 350 DEG C of growth temperature, growth rate
400nm/h, growth thickness 200nm；
(3) substrate is warming up to 500 DEG C, contact layer under growth 0.8 μ m-thick silicon doping N-shaped InP, doping concentration 2 ×
1018cm-3, 0.8 μm/h of growth rate；550 DEG C are then heated to, 2.5 μ m-thick silicon lightly doped n-type InGaAs absorbed layers is grown, mixes
Miscellaneous concentration 1 × 1016cm-3, 1 μm/h of growth rate；500 DEG C are cooled to, contact layer on 0.5 μ m-thick beryllium doped p type InP is grown, mixes
Miscellaneous concentration 3 × 1018cm-3；
(4) mesa panel detector structure is obtained using lithography and etching, utilizes inductively coupled plasma-chemical vapor deposition
Product method grown silicon nitride passivating film contacts electrode up and down using electron beam evaporation, prepares detector device architecture.
(5) adhesive tape is discharged for panel detector structure from substrate desquamation, to complete the system of flexible InGaAs detector using heat
It is standby.
Claims (1)
1. a kind of preparation method of flexibility InGaAs detector, the panel detector structure is successively to connect under InP on InP nucleating layer
Contact layer on contact layer, InGaAs absorbed layer and InP, the upper contact layer of InP and lower contact layer have contact electrode, side cladding passivation
Film, it is characterised in that the following steps are included:
(1) single-layer graphene is covered in InP substrate；
(2) molecular beam epitaxial method low-temperature epitaxy InP nucleating layer is used；The growth temperature of low-temperature epitaxy InP nucleating layer is 300-
350 DEG C, with a thickness of 50-200nm；
(3) substrate is warming up to growth temperature, successively contact layer, InGaAs absorbed layer, the upper contact layer of InP under grown InP；Growth temperature
Degree is 450-500 DEG C for contact layer on contact layer under InP and InP, is 500-550 DEG C for InGaAs absorbed layer；
(4) panel detector structure is prepared using device preparation technology；
(5) adhesive tape is discharged for panel detector structure from substrate desquamation using heat, completes the preparation of flexibility InGaAs detector.
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| CN201910411821.7A CN110224045B (en) | 2019-07-16 | 2019-07-16 | Preparation method of flexible InGaAs detector |
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