CN208272357U - A kind of semiconductor laser chip - Google Patents
A kind of semiconductor laser chip Download PDFInfo
- Publication number
- CN208272357U CN208272357U CN201820494219.5U CN201820494219U CN208272357U CN 208272357 U CN208272357 U CN 208272357U CN 201820494219 U CN201820494219 U CN 201820494219U CN 208272357 U CN208272357 U CN 208272357U
- Authority
- CN
- China
- Prior art keywords
- epitaxial structure
- solar cell
- semiconductor laser
- double
- laser chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 65
- 239000000758 substrate Substances 0.000 claims abstract description 80
- 239000002184 metal Substances 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 22
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 11
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 4
- 238000005498 polishing Methods 0.000 abstract description 20
- 241000218202 Coptis Species 0.000 abstract description 4
- 235000002991 Coptis groenlandica Nutrition 0.000 abstract description 4
- 210000004027 cell Anatomy 0.000 description 68
- 238000000034 method Methods 0.000 description 16
- 239000010410 layer Substances 0.000 description 15
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 230000010354 integration Effects 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000009987 spinning Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The utility model discloses a kind of semiconductor laser chips, comprising: twin polishing substrate, laser epitaxial structure and solar battery epitaxial structure；Wherein, laser epitaxial structure is set to the front of twin polishing substrate；Solar battery epitaxial structure is set to the back side of twin polishing substrate；Metal heat sink is set to side of the laser epitaxial structure far from twin polishing substrate, connect with the electrode of laser epitaxial structure；The p side electrode of solar battery epitaxial structure is connect by gold thread with metal heat sink.Semiconductor laser epitaxial structure and solar battery epitaxial structure are grown respectively in the front and back sides of twin polishing substrate, it is electrically connected with gold thread and heat sink realization, enable semiconductor laser chip by the solar cell for supplying power in self structure, improves the integrated level of device.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a semiconductor laser chip.
Background
With the increasingly wide application of semiconductor lasers, the requirements for corresponding driving power supplies are more and more diversified.
At present, the laser chip needs extra external power supply for working, so that the integration of a separation device is not facilitated.
Disclosure of Invention
In view of this, embodiments of the present invention provide a semiconductor laser chip to solve the problem in the prior art that the integration degree of the device is low because the laser chip needs an additional external power supply for operation.
According to a first aspect, embodiments of the present invention provide a semiconductor laser chip, including: the device comprises a double-sided polishing substrate, a laser epitaxial structure and a solar cell epitaxial structure; the laser epitaxial structure is arranged on the front side of the double-sided polishing substrate; the solar cell epitaxial structure is arranged on the back surface of the double-sided polished substrate; the metal heat sink is arranged on one side of the laser epitaxial structure, which is far away from the double-sided polishing substrate, and is connected with an electrode of the laser epitaxial structure; and the P-surface electrode of the solar cell epitaxial structure is connected with the metal heat sink through a gold wire.
Optionally, the double-sided polished substrate is N-doped GaAs or InP with a thickness of 300 μm to 400 μm.
Optionally, the doping concentration of the double-side polished substrate is greater than 1E19cm3。
Optionally, the lattice constants of the epitaxial layers of the solar cell epitaxial structure and the laser epitaxial structure are consistent with the lattice constant of the double-sided polished substrate.
Alternatively, when the double-side polished substrate is a GaAs substrate, the laser epitaxial structure is a semiconductor laser of an AlGaAs structure.
Optionally, the solar cell epitaxial structure is a multijunction solar cell composed of a GaAs subcell and a GaInP subcell.
Optionally, a ridge waveguide region is formed on the surface of the laser epitaxial structure.
Optionally, an antireflective film is formed on the solar cell epitaxial structure.
Optionally, the semiconductor laser chip is the same size as the solar cell epitaxial structure.
According to a second aspect, an embodiment of the present invention provides a method for manufacturing a semiconductor laser chip, including:
selecting a double-sided polishing substrate;
generating a laser epitaxial structure and a solar cell epitaxial structure; the laser epitaxial structure is arranged on the front surface of the double-sided polishing substrate; the solar cell epitaxial structure is arranged on the back surface of the double-sided polished substrate;
arranging a metal heat sink; the heat sink is arranged on one side of the laser epitaxial structure, which is far away from the double-sided polishing substrate, and is connected with an electrode of the laser epitaxial structure;
setting a gold thread; and the P-surface electrode of the solar cell epitaxial structure is connected with the metal heat sink through a gold wire.
The semiconductor laser chip provided by the embodiment of the invention has the following advantages:
1. the semiconductor laser chip provided by the implementation of the invention comprises: the device comprises a double-sided polishing substrate, a laser epitaxial structure and a solar cell epitaxial structure; the laser epitaxial structure is arranged on the front side of the double-sided polishing substrate; the solar cell epitaxial structure is arranged on the back surface of the double-sided polished substrate; the metal heat sink is arranged on one side of the laser epitaxial structure, which is far away from the double-sided polishing substrate, and is connected with an electrode of the laser epitaxial structure; and the P-surface electrode of the solar cell epitaxial structure is connected with the metal heat sink through a gold wire. The semiconductor laser epitaxial structure and the solar cell epitaxial structure are respectively grown on the front side and the back side of the double-sided polished substrate, and the gold wire and the heat sink are used for realizing electric connection of devices, so that a semiconductor laser chip can be powered by the solar cell in the structure of the semiconductor laser chip, and the integration level of the devices is improved.
2. The semiconductor laser chip provided by the embodiment of the invention has the advantages that the double-sided polishing substrate is N-type doped GaAs or InP, and the thickness is 300-400 mu m. The N-type doped GaAs or InP double-sided polishing substrate with the thickness of 350 mu m is adopted, and the thickness of the substrate is controlled, so that the resistance is reduced on one hand, and the volume of a semiconductor laser chip integrated with a solar cell is reduced on the other hand.
3. The semiconductor laser chip provided by the invention has the doping concentration of the double-sided polished substrate being more than 1E19cm3The conductivity of the substrate can be improved by carrying out N-type doping on the semiconductor substrate, so that the high-concentration N-type doped double-sided polished substrate has good conductivity.
4. In the semiconductor laser chip provided by the embodiment of the invention, the lattice constants of the epitaxial layers of the solar cell epitaxial structure 30 and the laser epitaxial structure 20 are consistent with the lattice constant of the double-sided polishing substrate 10, and the epitaxial layers consistent with the lattice constant of the high-concentration N-type doped GaAs or InP double-sided polishing substrate are adopted to form the solar cell epitaxial structure and the laser epitaxial structure, so that the influence caused by lattice mismatch is reduced, and the reliability of the semiconductor laser chip in the embodiment is improved.
5. According to the semiconductor laser chip provided by the embodiment of the invention, the solar cell epitaxial structure is a multi-junction solar cell consisting of a GaAs sub cell and a GaInP sub cell. The multi-junction solar cell formed by the GaAs sub-cell and the GaInP sub-cell grows on the GaAs substrate, and compared with a single-junction solar cell, the multi-junction solar cell has higher photoelectric conversion efficiency.
6. According to the semiconductor laser chip provided by the embodiment of the invention, the antireflection film is formed on the solar cell epitaxial structure. The light transmission amount is increased by arranging the antireflection film on the surface of the solar cell, and the reflection loss of light rays is reduced.
7. According to the semiconductor laser chip provided by the embodiment of the invention, the semiconductor laser chip and the solar cell epitaxial structure have the same size. The size of the laser chip is consistent with that of the solar cell chip, and the last scribing and splitting operation of the laser is guaranteed not to damage the solar cell chip.
Drawings
The features and advantages of the present invention will be more clearly understood by reference to the accompanying drawings, which are illustrative and not to be construed as limiting the invention in any way, and in which:
fig. 1 is a schematic structural diagram of a semiconductor laser chip according to an embodiment of the present invention;
fig. 2 is a flow chart of a method for fabricating a semiconductor laser chip according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a process of a method for manufacturing a semiconductor laser chip according to an embodiment of the present invention;
fig. 4 is another schematic structural diagram during a manufacturing method of a semiconductor laser chip according to an embodiment of the invention;
fig. 5 is a schematic structural diagram of a semiconductor laser chip during a manufacturing method thereof according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1, an embodiment of the present invention provides a semiconductor laser chip, including: a double-sided polished substrate 10, a laser epitaxial structure 20 and a solar cell epitaxial structure 30; wherein, the laser epitaxial structure 20 is arranged on the front side of the double-sided polished substrate 10; the solar cell epitaxial structure 30 is arranged on the back surface of the double-sided polished substrate 10; the metal heat sink 40 is arranged on one side of the laser epitaxial structure 20, which is far away from the double-sided polished substrate 10, and is connected with the electrode 21 of the laser epitaxial structure 20; the P-side electrode 31 of the solar cell epitaxial structure 30 is connected to the metal heat sink 40 by a gold wire 50.
In the embodiment, a double-sided polished substrate is adopted, and a semiconductor laser epitaxial structure and a solar cell epitaxial structure are grown on the front side and the back side of the double-sided polished substrate respectively; the metal heat sink is arranged on one side of the electrode of the semiconductor laser and is electrically connected with the electrode of the semiconductor laser; and the gold wire is connected with the P-surface electrode of the solar cell and the metal heat sink, so that the solar cell and the semiconductor laser form a loop. In a specific embodiment, a P-surface electrode of the solar cell is an anode, an electrode of the semiconductor laser is also an anode, and the P-surface electrode and the electrode are connected with the metal heat sink through gold wires; and the solar cell and the semiconductor laser are both cathodes at one side close to the double-sided polished substrate, and the solar cell and the semiconductor laser are electrically connected through the double-sided polished substrate. According to the semiconductor laser chip provided by the embodiment, the semiconductor laser epitaxial structure and the solar cell epitaxial structure are respectively grown on the front side and the back side of the double-sided polished substrate, and the gold wire and the heat sink are used for realizing the electric connection of the device, so that the semiconductor laser chip can be powered by the solar cell in the structure of the semiconductor laser chip, and the integration level of the device is improved.
As an alternative embodiment, the double-side polished substrate 10 is N-type doped GaAs or InP with a thickness of 300 to 400 μm.
In this embodiment, an N-type doped GaAs or InP double-sided polished substrate having a thickness of 350 μm is used, and the thickness of the substrate is controlled to reduce the resistance on the one hand and to reduce the volume of the semiconductor laser chip integrated with the solar cell on the other hand.
As an alternative embodiment, the double-side polished substrate 10 has a doping concentration greater than 1E19cm3。
In the embodiment, the conductivity of the substrate can be improved by N-doping the semiconductor substrate, so that the high-concentration N-doped double-sided polished substrate has good conductivity.
As an alternative embodiment, the lattice constants of the epitaxial layers of the solar cell epitaxial structure 30 and the laser epitaxial structure 20 are identical to the lattice constant of the double-sided polished substrate 10.
In this embodiment, the solar cell epitaxial structure and the laser epitaxial structure are formed by using the epitaxial layer having the same lattice constant as that of the high-concentration N-type doped GaAs or InP double-sided polished substrate, so that the influence caused by lattice mismatch is reduced, and the reliability of the semiconductor laser chip in this embodiment is improved.
As an alternative embodiment, when the double-side polished substrate 10 is a GaAs substrate, the laser epitaxial structure 20 is a semiconductor laser of an AlGaAs structure.
In this embodiment, a laser structure in which an active layer is AlGaAs is epitaxially grown on a GaAs substrate.
As an alternative embodiment, the solar cell epitaxial structure 30 is a multijunction solar cell composed of GaAs subcells and GaInP subcells.
In the embodiment, the multi-junction solar cell formed by the GaAs sub cell and the GaInP sub cell grown on the GaAs substrate has higher photoelectric conversion efficiency compared with a single-junction solar cell.
As an alternative embodiment, a ridge waveguide region 22 is formed on the surface of the laser epitaxial structure 20.
In the present embodiment, a ridge waveguide region 22 is formed on the laser epitaxial structure 20, and the effective refractive index of the waveguide is controlled by the shape of the waveguide, thereby confining the optical field to the center of the active region.
As an alternative embodiment, an antireflection film 32 is formed on the solar cell epitaxial structure 30.
In this embodiment, an antireflection film is disposed on the surface of the solar cell to increase the amount of light transmission and reduce the reflection loss of light.
As an alternative embodiment, the semiconductor laser chip is the same size as the solar cell epitaxial structure 30.
In this embodiment, the size of the laser chip is consistent with that of the solar cell chip, so as to ensure that the solar cell chip is not damaged by the final laser scribing and breaking operation.
As shown in fig. 2, an embodiment of the present invention further provides a method for manufacturing a semiconductor laser, including:
step S1, selecting a double-sided polished substrate.
In this embodiment, an N-type heavily doped GaAs or InP double-side polished substrate with a thickness of 350 μm is selected.
And step S2, generating a laser epitaxial structure and a solar cell epitaxial structure. The laser epitaxial structure is arranged on the front surface of the double-sided polishing substrate; and the solar cell epitaxial structure is arranged on the back surface of the double-sided polished substrate.
In this embodiment, as shown in fig. 3, the laser epitaxial structure 20 is grown on the front side of the double-side polished substrate 10, and then the solar cell structure 30 is grown on the back side of the substrate. After the growth is completed, a step S21 is further included, as shown in fig. 4, a layer of adhesive 40 is spin-coated on the surface of the laser epitaxial structure 20, a supporting substrate 50 with the same size as the epitaxial growth substrate is taken, and the surface of the supporting substrate 50 is adhered to the epitaxial surface of the laser structure 20. Wherein the adhesive 40 may be wax and the support substrate 50 may be silicon wafer, which is compatible with subsequent semiconductor planar processing and will not be dissolved by the solution used in the process.
In step S22, the electrode 31 is formed on the epitaxial structure of the solar cell on the back surface by using a conventional solar cell process. The method comprises the following specific steps: performing spin coating of photoresist, exposure and development by adopting a photoetching method to obtain a grid electrode pattern; evaporating a metal layer once by using electron beam evaporation equipment, wherein the thickness of the metal layer is about 2 mu m; and soaking the metal-evaporated functional layer in an acetone solution to remove the photoresist and the metal on the surface of the photoresist, wherein the metal is reserved in the area not covered by the photoresist.
In step S23, the antireflection film 32 is formed using a solar cell process. Specifically, a photoetching method is adopted, photoresist is coated in a spinning mode, exposure and development are carried out, an electrode metal part is protected by the photoresist, a contact layer (GaAs) on the surface of a battery function layer is corroded by a corrosive solution, and then TiO is sequentially evaporated by an electron beam evaporation device2And SiO2And as an antireflection film, soaking the functional layer coated with the reflection film in acetone, and removing the photoresist and the antireflection film on the surface of the photoresist to obtain the solar cell structure shown in fig. 4.
In step S24, the adhesive is dissolved using a solution that can remove the adhesive 40, and the support substrate 5 is separated from the laser epitaxial layer surface. The solution may be toluene.
Step S25, spin-coating the adhesive 40 on the surface where the solar cell process is completed, and bonding the support substrate 50 to the solar cell surface for protection during the process, as shown in fig. 5.
Step S26, a laser chip fabrication process is used to form a ridge waveguide region 22 on the laser epitaxial structure 20 on the front side of the substrate. Specifically, a photoetching method is adopted, photoresist is coated in a spinning mode, exposure and development are carried out, a ridge region, namely an electrode region, is protected by the photoresist, and a contact layer and a part of a limiting layer on two sides of the ridge region are corroded by a corrosion solution; SiO deposition by PECVD2Layer 23, approximately 100nm-200nm thick, mainly serves as an insulating function; then, a window is opened by a photolithography method, and a P-side metal electrode 21 is vapor-deposited, thereby obtaining a laser structure as shown in fig. 5.
Step S24 is repeated to remove the adhesive 4 and the support substrate 5.
Step S3, a metal heat sink is provided. The heat sink is arranged on one side of the laser epitaxial structure, which is far away from the double-sided polishing substrate, and is connected with the electrode of the laser epitaxial structure.
In this embodiment, as shown in fig. 1, a heat sink is disposed on the surface of the laser and connected to the P-side electrode of the laser.
In step S4, a gold wire is set. And the P-surface electrode of the solar cell epitaxial structure is connected with the metal heat sink through a gold wire.
According to the semiconductor laser chip manufacturing method, the semiconductor laser epitaxial structure and the solar cell epitaxial structure are respectively grown on the front side and the back side of the double-sided polished substrate, and the device is electrically connected through the gold thread and the heat sink, so that the semiconductor laser chip can be powered by the solar cell in the structure, and the integration level of the device is improved.
Although the embodiments of the present invention have been described in conjunction with the accompanying drawings, those skilled in the art may make various modifications and variations without departing from the spirit and scope of the invention, and such modifications and variations fall within the scope defined by the appended claims.
Claims (9)
1. A semiconductor laser chip, comprising: a double-sided polished substrate (10), a laser epitaxial structure (20) and a solar cell epitaxial structure (30);
wherein,
the laser epitaxial structure (20) is arranged on the front surface of the double-sided polished substrate (10); the solar cell epitaxial structure (30) is arranged on the back surface of the double-sided polished substrate;
the metal heat sink (40) is arranged on one side, away from the double-sided polished substrate (10), of the laser epitaxial structure (20) and is connected with the electrode (21) of the laser epitaxial structure (20);
and the P-surface electrode (31) of the solar cell epitaxial structure (30) is connected with the metal heat sink (40) through a gold wire (50).
2. A semiconductor laser chip according to claim 1, characterized in that the double-sided polished substrate (10) is N-doped GaAs or InP with a thickness of 300 to 400 μm.
3. A semiconductor laser chip as claimed in claim 1, characterized in that the doping concentration of the double-sided polished substrate (10) is greater than 1E19cm3。
4. A semiconductor laser chip according to claim 1, characterized in that the lattice constants of the epitaxial layers of the solar cell epitaxial structure (30) and the laser epitaxial structure (20) coincide with the lattice constant of the double-sided polished substrate (10).
5. A semiconductor laser chip according to claim 1, characterized in that when the double-side polished substrate (10) is a GaAs substrate, the laser epitaxial structure (20) is a semiconductor laser of AlGaAs structure.
6. A semiconductor laser chip according to claim 1, characterized in that the solar cell epitaxial structure (30) is a multijunction solar cell of GaAs subcells and GaInP subcells.
7. A semiconductor laser chip as claimed in claim 1, wherein a ridge waveguide region (22) is formed at the surface of the laser epitaxial structure (20).
8. A semiconductor laser chip according to claim 1, wherein an antireflection film (32) is formed on the solar cell epitaxial structure (30).
9. The semiconductor laser chip according to any of claims 1 to 8, characterized in that it conforms to the dimensions of the solar cell epitaxial structure (30).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820494219.5U CN208272357U (en) | 2018-04-09 | 2018-04-09 | A kind of semiconductor laser chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820494219.5U CN208272357U (en) | 2018-04-09 | 2018-04-09 | A kind of semiconductor laser chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208272357U true CN208272357U (en) | 2018-12-21 |
Family
ID=64677773
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820494219.5U Active CN208272357U (en) | 2018-04-09 | 2018-04-09 | A kind of semiconductor laser chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208272357U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108512035A (en) * | 2018-04-09 | 2018-09-07 | 苏州矩阵光电有限公司 | A kind of semiconductor laser chip and preparation method thereof |
| CN109638639A (en) * | 2018-12-14 | 2019-04-16 | 苏州矩阵光电有限公司 | A kind of semiconductor laser chip and preparation method thereof |
-
2018
- 2018-04-09 CN CN201820494219.5U patent/CN208272357U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108512035A (en) * | 2018-04-09 | 2018-09-07 | 苏州矩阵光电有限公司 | A kind of semiconductor laser chip and preparation method thereof |
| CN109638639A (en) * | 2018-12-14 | 2019-04-16 | 苏州矩阵光电有限公司 | A kind of semiconductor laser chip and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5150473B2 (en) | Stacked photoelectric conversion device | |
| KR100847741B1 (en) | Point-contacted heterojunction silicon solar cell having passivation layer between the interface of p-n junction and method for fabricating the same | |
| US9257284B2 (en) | Silicon heterojunction solar cells | |
| US20100193027A1 (en) | Solar cell and method for manufacturing the same | |
| JPH06511357A (en) | Multispectral configuration by cell stacking and its manufacturing method | |
| JPH05114747A (en) | Improved monolithic tandem-type solar cell | |
| US20100252094A1 (en) | High-Efficiency Solar Cell and Method of Manufacturing the Same | |
| JP6360471B2 (en) | Photoelectric conversion element, photoelectric conversion module, and photovoltaic power generation system | |
| CN103975449A (en) | Solar cell | |
| CN102222734A (en) | Method for manufacturing inverted solar cell | |
| TWI474488B (en) | Solar cell | |
| Jia et al. | Silicon nanowire solar cells with radial pn heterojunction on crystalline silicon thin films: Light trapping properties | |
| CN208272357U (en) | A kind of semiconductor laser chip | |
| US20160155870A1 (en) | A solar cell structure and a method of its fabrication | |
| CN110574170A (en) | flexible thin film solar cell and manufacturing method thereof | |
| CN108512035A (en) | A kind of semiconductor laser chip and preparation method thereof | |
| CN108054231B (en) | Four-junction solar cell based on Si substrate and manufacturing method | |
| US20240038911A1 (en) | Flip-chip solar cell | |
| KR101023144B1 (en) | Solar cell using layer transfer process and fabrication method thereof | |
| US11581150B2 (en) | Perovskite silicon tandem solar cell and method for manufacturing the same | |
| CN111726076B (en) | Solar-energy-based power generation and energy storage integrated device and preparation method thereof | |
| CN117321776A (en) | Multi-junction solar cell | |
| US20130042907A1 (en) | Solar cell device | |
| CN109638639A (en) | A kind of semiconductor laser chip and preparation method thereof | |
| CN113380901A (en) | Solar cell with flip-chip light trap laminated structure and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |