CN109638639A - A kind of semiconductor laser chip and preparation method thereof - Google Patents
A kind of semiconductor laser chip and preparation method thereof Download PDFInfo
- Publication number
- CN109638639A CN109638639A CN201811538852.0A CN201811538852A CN109638639A CN 109638639 A CN109638639 A CN 109638639A CN 201811538852 A CN201811538852 A CN 201811538852A CN 109638639 A CN109638639 A CN 109638639A
- Authority
- CN
- China
- Prior art keywords
- epitaxial structure
- semiconductor laser
- solar battery
- twin polishing
- polishing substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
- H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to technical field of semiconductors, and in particular to a kind of semiconductor laser chip and preparation method thereof, wherein semiconductor laser chip includes: twin polishing substrate, laser epitaxial structure and solar battery epitaxial structure；Laser epitaxial structure is set to the front of twin polishing substrate；Solar battery epitaxial structure is set to the back side of twin polishing substrate；Metal heat sink is set to side of the laser epitaxial structure far from twin polishing substrate, connect with the electrode of laser epitaxial structure；The p side electrode of solar battery epitaxial structure is connect by gold thread with metal heat sink, and twin polishing substrate is the GaAs or InP of n-type doping, and with a thickness of 300-400 μm, and its doping concentration is greater than 1E19cm3.Semiconductor laser epitaxial structure and solar battery epitaxial structure are grown respectively in the front and back sides of twin polishing substrate, it is electrically connected with gold thread and heat sink realization, enable semiconductor laser chip by the solar cell for supplying power in self structure, improves the integrated level of device.
Description
Technical field
The present invention relates to technical field of semiconductors, and in particular to a kind of semiconductor laser chip and preparation method thereof.
Background technique
It is the group-III element of such as Al, Ga or In and the chemical combination of V group element N due to its band structure and chemical stability
The nitride-based semiconductor of object is promising semiconductor material for light-emitting component and power component etc..Therefore, it has attempted to
The various applications of nitride-based semiconductor, one of these applications are used as the light of the optical information recording device of such as CD drive
The nitride semiconductor laser device in source.In recent years, due to the use of GaN substrate, the progress of crystal technique, well set
The component structure of meter, improved wafer processing techniques and other factors, nitride semiconductor Laser device has been realized in can
It is reduced by property and cost, and has produced the market as commercial product.
Phase due to the short oscillation wavelength of nitride-based semiconductor, for nitride-based semiconductor as fluorescent material excitation light source
Hope to be also very high.The typical case of fluorescent material excitation light source is the white light LEDs using nitride-based semiconductor.In recent years,
The superpower laser made by nitride system semiconductor is needing directionality and high-power next-generation oriented lamp
(directionallight) and the use in television set etc. also results in the attention of people.In such applications, semiconductor swashs
Light device needs additional external power supply to power, and is unfavorable for the integrated of discrete device in this way.
Summary of the invention
Therefore, the technical problem to be solved in the present invention is that overcoming chip of laser need of work in the prior art additional
External power supply power supply, leads to the lower defect of device integration degree, to provide a kind of semiconductor laser chip and its system
Make method.
Above-mentioned technical purpose of the invention has the technical scheme that
According in a first aspect, the embodiment of the invention provides a kind of semiconductor laser chips, comprising:
Twin polishing substrate；
Laser epitaxial structure is set to the front of the twin polishing substrate；
Solar battery epitaxial structure is set to the back side of the twin polishing substrate；
Metal heat sink is set to side of the laser epitaxial structure far from the twin polishing substrate, swashs with described
The electrode of light device epitaxial structure connects；
The p side electrode of gold thread, the solar battery epitaxial structure is connect by gold thread with the metal heat sink；
Wherein, the twin polishing substrate is the GaAs or InP of n-type doping, and with a thickness of 300 μm to 400 μm, and it is adulterated
Concentration is greater than 1E19cm3。
Optionally, the lattice constant and twin polishing of solar battery epitaxial structure and the epitaxial layer of laser epitaxial structure
The lattice constant of substrate is consistent.
Optionally, when twin polishing substrate is GaAs substrate, laser epitaxial structure is the semiconductor of AlGaAs structure
Laser.
Optionally, solar battery epitaxial structure is the multi-junction solar electricity of the sub- battery of GaAs and the sub- battery composition of GaInP
Pond.
Optionally, ridge waveguide area is formed on laser epitaxial structure surface.
Optionally, antireflective coating is formed on solar battery epitaxial structure upper layer.
Optionally, semiconductor laser chip is consistent with the size of solar battery epitaxial structure.
According to second aspect, the embodiment of the invention provides a kind of production methods of semiconductor laser chip, including such as
Lower step:
Choose twin polishing substrate；
Generate laser epitaxial structure and solar battery epitaxial structure, wherein laser epitaxial structure is set to double
The front of face polishing substrate；Solar battery epitaxial structure is set to the back side of twin polishing substrate；
Metal heat sink is set, and metal heat sink is set to side of the laser epitaxial structure far from twin polishing substrate, and swashs
The electrode of light device epitaxial structure connects；
Gold thread is set, and the p side electrode of solar battery epitaxial structure is connect by gold thread with metal heat sink.
Technical solution of the present invention has the advantages that
1, the present invention implement provide semiconductor laser chip, comprising: twin polishing substrate, laser epitaxial structure with
And solar battery epitaxial structure；Wherein, laser epitaxial structure is set to the front of twin polishing substrate；Outside solar battery
Prolong structure setting in the back side of twin polishing substrate；Metal heat sink is set to laser epitaxial structure far from twin polishing substrate
Side, connect with the electrode of laser epitaxial structure；The p side electrode of solar battery epitaxial structure passes through gold thread and metal fever
Heavy connection.Semiconductor laser epitaxial structure and solar battery epitaxy junction are grown respectively in the front and back sides of twin polishing substrate
Structure is electrically connected with gold thread and heat sink realization device, enables semiconductor laser chip by the solar-electricity in self structure
Pond power supply, improves the integrated level of device.
2, the present invention implements semiconductor laser chip provided and preparation method thereof, and twin polishing substrate is n-type doping
GaAs or InP, with a thickness of 300 μm to 400 μm.Using n-type doping GaAs or InP the twin polishing substrate with a thickness of 350 μm,
Substrate thickness is controlled, on the one hand reduces resistance, on the other hand reduces the semiconductor laser chip for being integrated with solar battery
Volume.
3, the present invention implements semiconductor laser chip provided and preparation method thereof, the doping concentration of twin polishing substrate
Greater than 1E19cm3, the conductivity of substrate can be improved by carrying out n-type doping to semiconductor substrate, therefore the n-type doping of high concentration is two-sided
Polishing substrate has good conductive property.
4, the present invention implements semiconductor laser chip provided and preparation method thereof, 30 He of solar battery epitaxial structure
The lattice constant of the epitaxial layer of laser epitaxial structure 20 is consistent with the lattice constant of twin polishing substrate 10, use and high concentration
GaAs the or InP consistent epitaxial layer of twin polishing substrate lattice constant of n-type doping come formed solar battery epitaxial structure and
Laser epitaxial structure, reducing lattice mismatch bring influences, and improves the reliable of the semiconductor laser chip in the present embodiment
Property.
5, the present invention implements semiconductor laser chip provided and preparation method thereof, and solar battery epitaxial structure is
The multijunction solar cell of the sub- battery of GaAs and the sub- battery composition of GaInP.The sub- battery of growth GaAs and GaInP on gaas substrates
The multijunction solar cell of sub- battery composition compares unijunction solar cell, possesses higher photoelectric conversion efficiency.
6, the present invention implements semiconductor laser chip provided and preparation method thereof, on solar battery epitaxial structure
Layer forms antireflective coating.Increase light transmission capacity by the way that antireflective coating is arranged in solar cell surface, reduces the reflection damage of light
It loses.
7, the present invention implements semiconductor laser chip provided and preparation method thereof, semiconductor laser chip and the sun
The size of energy battery epitaxial structure is consistent.The size of chip of laser is consistent with solar battery chip size, is guaranteed most
Laser scribing and sliver operation will not damage solar battery chip afterwards.
Detailed description of the invention
It, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical solution in the prior art
Embodiment or attached drawing needed to be used in the description of the prior art be briefly described, it should be apparent that, it is described below
Attached drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not making the creative labor
It puts, is also possible to obtain other drawings based on these drawings.
Fig. 1 is a kind of structural schematic diagram of semiconductor laser chip in the embodiment of the present invention；
Fig. 2 is a kind of production method flow chart of semiconductor laser chip in the embodiment of the present invention；
Fig. 3 is a structural representation during the production method of semiconductor laser chip a kind of in the embodiment of the present invention
Figure；
Fig. 4 shows for another structure during the production method of semiconductor laser chip a kind of in the embodiment of the present invention
It is intended to；
Fig. 5 shows for another structure during the production method of semiconductor laser chip a kind of in the embodiment of the present invention
It is intended to.
Description of symbols:
10, twin polishing substrate；20, laser epitaxial structure；21, electrode；22, ridge waveguide area；30, solar battery
Epitaxial structure；31, p side electrode；32, antireflective coating；40, metal heat sink；50, gold thread；60, adhesive；70, support substrate.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
As shown in Figure 1, the embodiment of the invention provides a kind of semiconductor laser chips, comprising: twin polishing substrate 10,
Laser epitaxial structure 20 and solar battery epitaxial structure 30；Wherein, laser epitaxial structure 20 is set to twin polishing
The front of substrate 10；Solar battery epitaxial structure 30 is set to the back side of twin polishing substrate 10；Metal heat sink 40, is set to
Side of the laser epitaxial structure 20 far from twin polishing substrate 10 is connect with the electrode 21 of laser epitaxial structure 20；The sun
The p side electrode 31 of energy battery epitaxial structure 30 is connect by gold thread 50 with metal heat sink 40.
In the present embodiment, using the substrate of twin polishing, half is generated in the obverse and reverse of twin polishing substrate respectively
Conductor laser epitaxial structure and solar battery epitaxial structure；The electrode side of semiconductor laser is arranged in metal heat sink,
And it is electrically connected with the formation of the electrode of semiconductor laser；Gold thread connects the p side electrode and metal heat sink of solar battery, makes the sun
It can battery and semiconductor laser forming circuit.In a particular embodiment, the p side electrode of solar battery is anode, semiconductor
The electrode of laser is also anode, and the two is connect by gold thread with metal heat sink；And solar battery and semiconductor laser lean on
Nearly twin polishing one side of substrate is all cathode, and the two realizes electrical connection by twin polishing substrate.According to provided in this embodiment
Semiconductor laser chip grows semiconductor laser epitaxial structure and solar-electricity in the front and back sides of twin polishing substrate respectively
Pond epitaxial structure is electrically connected with gold thread and heat sink realization device, enables semiconductor laser chip by self structure
Solar cell for supplying power improves the integrated level of device.
As optional embodiment, twin polishing substrate 10 is the GaAs or InP of n-type doping, extremely with a thickness of 300 μm
400μm。
In the present embodiment, using n-type doping GaAs or InP the twin polishing substrate with a thickness of 350 μm, it is thick to control substrate
On the one hand degree reduces resistance, on the other hand reduces the volume for being integrated with the semiconductor laser chip of solar battery.
As optional embodiment, the doping concentration of twin polishing substrate 10 is greater than 1E19cm3。
In the present embodiment, the conductivity of substrate, therefore the N of high concentration can be improved by carrying out n-type doping to semiconductor substrate
Type doping twin polishing substrate has good conductive property.
As optional embodiment, the crystalline substance of the epitaxial layer of solar battery epitaxial structure 30 and laser epitaxial structure 20
Lattice constant is consistent with the lattice constant of twin polishing substrate 10.
In the present embodiment, using consistent with GaAs the or InP twin polishing substrate lattice constant of high concentration n-type doping
Epitaxial layer forms solar battery epitaxial structure and laser epitaxial structure, and reducing lattice mismatch bring influences, improve this
The reliability of semiconductor laser chip in embodiment.
As optional embodiment, when twin polishing substrate 10 is GaAs substrate, laser epitaxial structure 20 is
The semiconductor laser of AlGaAs structure.
In the present embodiment, the laser structure that epitaxial growth active layer is AlGaAs on gaas substrates.
As optional embodiment, solar battery epitaxial structure 30 is the sub- battery of GaAs and the sub- battery composition of GaInP
Multijunction solar cell.
In the present embodiment, the multi-junction solar of GaAs battery and the sub- battery composition of GaInP is grown on gaas substrates
Battery compares unijunction solar cell, possesses higher photoelectric conversion efficiency.
As optional embodiment, ridge waveguide area 22 is formed on 20 surface of laser epitaxial structure.
In the present embodiment, ridge waveguide area 22 is formed in laser epitaxial structure 20, is controlled by the shape of waveguide
The effective refractive index of waveguide processed, so that light field to be limited in the central location of active area.
As optional embodiment, antireflective coating 32 is formed on 30 upper layer of solar battery epitaxial structure.
In the present embodiment, antireflective coating is set to increase light transmission capacity in solar cell surface, reduces the reflection of light
Loss.
As optional embodiment, semiconductor laser chip is consistent with the size of solar battery epitaxial structure 30.
In the present embodiment, the size of chip of laser is consistent with solar battery chip size, is guaranteed last sharp
The scribing of light device and sliver operation will not damage solar battery chip.
As shown in Fig. 2, the embodiment of the invention also provides a kind of production methods of semiconductor laser, comprising:
Step S1 chooses twin polishing substrate 10.
In the present embodiment, GaAs the or InP twin polishing substrate of N-type high-concentration dopant is chosen, with a thickness of 350 μm.
Step S2 generates laser epitaxial structure 20 and solar battery epitaxial structure 30.Wherein, laser epitaxial knot
Structure 20 is set to the front of twin polishing substrate 10；Solar battery epitaxial structure 30 is set to the back of twin polishing substrate 10
Face.
In the present embodiment, as shown in figure 3, first growing laser epitaxial structure 20 in the front of twin polishing substrate 10,
Then in the back side growth for solar battery structure 30 of substrate.It further include step S21 after the completion of growth, as shown in figure 4, swashing
20 surface spin coating a layer of adhesive 60 of light device epitaxial structure, take with the duplicate support substrate 70 of epitaxial growth substrate size,
70 surface of support substrate and 20 surface bonding of laser epitaxial structure.Wherein, adhesive 60 can select wax, and support substrate 70 can
Be selected as silicon wafer, the adhesive 60 is compatible with Subsequent semiconductor planar technology, will not the solution used in technique dissolve.
Step S22 forms electrode using conventional solar battery process to the solar battery epitaxial structure 20 at the back side
31.It is specific as follows: to use photolithography method, spin coating photoresist, exposure and imaging obtains gate electrode figure；It is steamed using electron beam
Hair evaporated metal layer of equipment, 2 μm of thickness or so；The functional layer that metal has been deposited is immersed in acetone soln, light is removed
The metal on photoresist and photoresist surface, without the region of photoresist overlay, metal is retained.
Step S23 forms antireflective coating 32 using solar battery process.Specifically, using photolithography method, spin coating photoetching
Glue, exposure and imaging protect electrode metal part with photoresist, with etchant solution by the contact of battery functi on layer surface
Layer (GaAs) erodes, then deposited by electron beam evaporation equipment, TiO2 and SiO2 is successively deposited as antireflective coating, then will be deposited
The functional layer of reflectance coating is impregnated in acetone, and the antireflective coating on photoresist and photoresist surface is removed, obtain it is as shown in Figure 4 too
Positive energy battery structure.
Step S24 is dissolved adhesive using the solution that can remove adhesive 40, is made outside support substrate 5 and laser
Prolong layer surface separation.Solution can select toluene.
Step S25, in the surface spin coating adhesive 40 for completing solar battery process, by support substrate 50 and solar-electricity
Pool surface bonding, shields, as shown in Figure 5 in technical process.
Step S26 forms ridged in the laser epitaxial structure 20 of substrate face using chip of laser manufacture craft
Waveguide section 22.Specifically, using photolithography method, spin coating photoresist, exposure and imaging, by rib region, that is, electrode zone photoetching
Glue protects, with the contact layer and part limiting layer of etchant solution corrosion rib region two sides；SiO2 layers are deposited using PECVD
23, the general 100nm-200nm of thickness mainly play insulating effect；It is opened a window later using the method for photoetching, the face P metal electrode is deposited
21, obtain laser structure as shown in Figure 5.
Step S24 is repeated, adhesive 4 and support substrate 5 are removed.
Metal heat sink is arranged in step S3.It is heat sink to be set to side of the laser epitaxial structure far from twin polishing substrate, with
The electrode of laser epitaxial structure connects.
In the present embodiment, it as shown in Figure 1, being arranged heat sink in facet surface, is connect with the p side electrode of laser.
Gold thread is arranged in step S4.The p side electrode of solar battery epitaxial structure is connect by gold thread with metal heat sink.
Semiconductor laser chip production method provided by the embodiment, by being given birth to respectively in the front and back sides of twin polishing substrate
Long semiconductor laser epitaxial structure and solar battery epitaxial structure are electrically connected with gold thread and heat sink realization device, make partly to lead
Body laser chip can improve the integrated level of device by the solar cell for supplying power in self structure.
Obviously, the above embodiments are merely examples for clarifying the description, and does not limit the embodiments.It is right
For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of variation or
It changes.There is no necessity and possibility to exhaust all the enbodiments.And it is extended from this it is obvious variation or
It changes still within the protection scope of the invention.
Claims (8)
1. a kind of semiconductor laser chip characterized by comprising
Twin polishing substrate (10)；
Laser epitaxial structure (20) is set to the front of the twin polishing substrate (10)；
Solar battery epitaxial structure (30) is set to the back side of the twin polishing substrate (10)；
Metal heat sink (40) is set to the side of the laser epitaxial structure (20) far from the twin polishing substrate (10),
It is connect with the electrode (21) of the laser epitaxial structure (20)；
The p side electrode (31) of gold thread (50), the solar battery epitaxial structure (30) passes through gold thread (50) and the metal fever
Heavy (40) connection；
Wherein, the twin polishing substrate (10) is the GaAs or InP of n-type doping, and with a thickness of 300 μm to 400 μm, and it is adulterated
Concentration is greater than 1E19cm3。
2. a kind of semiconductor laser chip according to claim 1, which is characterized in that the solar battery epitaxy junction
The lattice of the lattice constant of structure (30) and the epitaxial layer of the laser epitaxial structure (20) and the twin polishing substrate (10)
Constant is consistent.
3. a kind of semiconductor laser chip according to claim 1, which is characterized in that in the twin polishing substrate
(10) be GaAs substrate when, the laser epitaxial structure (20) be AlGaAs structure semiconductor laser.
4. a kind of semiconductor laser chip according to claim 1, which is characterized in that the solar battery epitaxy junction
Structure (30) is the multijunction solar cell of the sub- battery of GaAs and the sub- battery composition of GaInP.
5. a kind of semiconductor laser chip according to claim 1, which is characterized in that in the laser epitaxial structure
(20) surface forms ridge waveguide area (22).
6. a kind of semiconductor laser chip according to claim 1, which is characterized in that in the solar battery extension
Structure (30) upper layer forms antireflective coating (32).
7. according to claim 1 to any semiconductor laser chip in 6, which is characterized in that the semiconductor laser
Device chip is consistent with the size of the solar battery epitaxial structure (30).
8. a kind of production method of semiconductor laser chip, which comprises the steps of:
It chooses twin polishing substrate (10)；
Generate laser epitaxial structure (20) and solar battery epitaxial structure (30)；Wherein, the laser epitaxial structure
(20), it is set to the front of the twin polishing substrate (10)；The solar battery epitaxial structure (20) is set to described double
Face polishes the back side of substrate (10)；
It is arranged metal heat sink (40)；The metal heat sink (40) is set to the laser epitaxial structure (20) far from described two-sided
The side for polishing substrate (10), connect with the electrode (21) of the laser epitaxial structure (20)；
It is arranged gold thread (50)；The p side electrode (31) of the solar battery epitaxial structure (30) passes through the gold thread (50) and institute
State metal heat sink (40) connection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811538852.0A CN109638639A (en) | 2018-12-14 | 2018-12-14 | A kind of semiconductor laser chip and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811538852.0A CN109638639A (en) | 2018-12-14 | 2018-12-14 | A kind of semiconductor laser chip and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109638639A true CN109638639A (en) | 2019-04-16 |
Family
ID=66074368
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811538852.0A Withdrawn CN109638639A (en) | 2018-12-14 | 2018-12-14 | A kind of semiconductor laser chip and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109638639A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110190504A (en) * | 2019-05-24 | 2019-08-30 | 宁波东立创芯光电科技有限公司 | Semiconductor laser array encapsulating structure |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1529902A (en) * | 2001-05-09 | 2004-09-15 | ������������Үά�桤�м����� | Semiconductor device and method of making same |
| CN101009347A (en) * | 2006-01-27 | 2007-08-01 | 中国科学院物理研究所 | Non polarity A side nitride film growing on the silicon(102) substrate and its making method and use |
| CN206194791U (en) * | 2016-08-23 | 2017-05-24 | 苏州矩阵光电有限公司 | Hall element |
| CN107749561A (en) * | 2017-11-27 | 2018-03-02 | 苏州矩阵光电有限公司 | A kind of capsulation structure for semiconductor laser and preparation method thereof |
| CN108512035A (en) * | 2018-04-09 | 2018-09-07 | 苏州矩阵光电有限公司 | A kind of semiconductor laser chip and preparation method thereof |
| CN208272357U (en) * | 2018-04-09 | 2018-12-21 | 苏州矩阵光电有限公司 | A kind of semiconductor laser chip |
-
2018
- 2018-12-14 CN CN201811538852.0A patent/CN109638639A/en not_active Withdrawn
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1529902A (en) * | 2001-05-09 | 2004-09-15 | ������������Үά�桤�м����� | Semiconductor device and method of making same |
| CN101009347A (en) * | 2006-01-27 | 2007-08-01 | 中国科学院物理研究所 | Non polarity A side nitride film growing on the silicon(102) substrate and its making method and use |
| CN206194791U (en) * | 2016-08-23 | 2017-05-24 | 苏州矩阵光电有限公司 | Hall element |
| CN107749561A (en) * | 2017-11-27 | 2018-03-02 | 苏州矩阵光电有限公司 | A kind of capsulation structure for semiconductor laser and preparation method thereof |
| CN108512035A (en) * | 2018-04-09 | 2018-09-07 | 苏州矩阵光电有限公司 | A kind of semiconductor laser chip and preparation method thereof |
| CN208272357U (en) * | 2018-04-09 | 2018-12-21 | 苏州矩阵光电有限公司 | A kind of semiconductor laser chip |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110190504A (en) * | 2019-05-24 | 2019-08-30 | 宁波东立创芯光电科技有限公司 | Semiconductor laser array encapsulating structure |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7485482B2 (en) | Method for manufacturing vertical group III-nitride light emitting device | |
| US8735185B2 (en) | Light emitting device and fabrication method thereof | |
| US7294862B2 (en) | Photonic crystal light emitting device | |
| CN102222734B (en) | Method for manufacturing inverted solar cell | |
| US7422915B2 (en) | Light emitting diode and method for manufacturing the same | |
| JPH06511357A (en) | Multispectral configuration by cell stacking and its manufacturing method | |
| JPH1056204A (en) | Compound semiconductor light emitting element and fabrication thereof | |
| CN108133993A (en) | A kind of ultraviolet LED vertical chip structure | |
| JP2009117744A (en) | METHOD OF MANUFACTURING ZnO-BASED SEMICONDUCTOR DEVICE | |
| CN104022176B (en) | The preparation method of four-junction solar cell | |
| CN109473528A (en) | Area source VCSEL and preparation method thereof with total rear electrode | |
| CN101093931A (en) | Long wavelength laser transmitted perpendicular to surface of cavity by using integrated pumping light source | |
| CN208272357U (en) | A kind of semiconductor laser chip | |
| CN109638639A (en) | A kind of semiconductor laser chip and preparation method thereof | |
| US3998672A (en) | Method of producing infrared luminescent diodes | |
| CN108512035A (en) | A kind of semiconductor laser chip and preparation method thereof | |
| JPH0677580A (en) | Semiconductor structure for optoelectronic component | |
| CN209544385U (en) | Area source VCSEL with total rear electrode | |
| CN106784108B (en) | A kind of binode Thinfilm solar cell assembly and preparation method thereof | |
| TWI427821B (en) | Method for fabricating planar conduction type light emitting diodes with thermal guide substrate | |
| WO2020248509A1 (en) | Electric-injection micro-disk resonant cavity light-emitting device and preparation method therefor | |
| KR100688037B1 (en) | Iii-nitride semiconductor light emitting device | |
| CN110783437A (en) | Light emitting diode having zinc oxide layer and method for manufacturing the same | |
| CN110943139B (en) | Solar cell and manufacturing method thereof | |
| KR100234001B1 (en) | Method for manufacturing quantum wire laser diode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20190416 |
|
| WW01 | Invention patent application withdrawn after publication |