CN110534601A - A kind of solar cell and preparation method thereof of band protection integrated bypass diode - Google Patents
A kind of solar cell and preparation method thereof of band protection integrated bypass diode Download PDFInfo
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- CN110534601A CN110534601A CN201910749736.1A CN201910749736A CN110534601A CN 110534601 A CN110534601 A CN 110534601A CN 201910749736 A CN201910749736 A CN 201910749736A CN 110534601 A CN110534601 A CN 110534601A
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- 238000002360 preparation method Methods 0.000 title abstract description 6
- 238000004519 manufacturing process Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims description 51
- 239000000463 material Substances 0.000 claims description 38
- 239000006117 anti-reflective coating Substances 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 27
- 238000001704 evaporation Methods 0.000 claims description 16
- 238000001259 photo etching Methods 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 230000008020 evaporation Effects 0.000 claims description 12
- 238000007740 vapor deposition Methods 0.000 claims description 11
- 229910009815 Ti3O5 Inorganic materials 0.000 claims description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 7
- 229910000679 solder Inorganic materials 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 230000007797 corrosion Effects 0.000 claims description 5
- 238000005260 corrosion Methods 0.000 claims description 5
- 229910052593 corundum Inorganic materials 0.000 claims description 5
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 5
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 abstract description 45
- 238000002955 isolation Methods 0.000 abstract description 16
- 238000005516 engineering process Methods 0.000 abstract description 4
- 239000011241 protective layer Substances 0.000 abstract description 4
- 230000008878 coupling Effects 0.000 abstract description 2
- 238000010168 coupling process Methods 0.000 abstract description 2
- 238000005859 coupling reaction Methods 0.000 abstract description 2
- 230000031700 light absorption Effects 0.000 abstract description 2
- 230000003068 static effect Effects 0.000 abstract description 2
- 238000003466 welding Methods 0.000 description 8
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 6
- 208000032953 Device battery issue Diseases 0.000 description 3
- 230000006378 damage Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003902 lesion Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/044—PV modules or arrays of single PV cells including bypass diodes
- H01L31/0443—PV modules or arrays of single PV cells including bypass diodes comprising bypass diodes integrated or directly associated with the devices, e.g. bypass diodes integrated or formed in or on the same substrate as the photovoltaic cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The present invention relates to a kind of solar cells and preparation method thereof of band protection integrated bypass diode, belong to solar cell manufacturing technology field, the solar cell and a kind of solar battery array for being more specifically related to a kind of band protection integrated bypass diode include solar cell as described above.Antireflection layer is formed to battery body, increases the efficiency of light absorption of solar cell；Edge protection layer is formed to diode edge, avoids diode edge static discharge and P/N from tying edge current leakage, improves diode reliability；Protective layer is formed to diode-isolated slot, mutually contact isolation channel causes shorted diode in flakes when preventing from mutually coupling in flakes, improves the reliability of solar battery array.
Description
Technical field
The present invention relates to a kind of solar cells and preparation method thereof of band protection integrated bypass diode, belong to solar cell
Manufacturing technology field is more specifically related to the solar cell and a kind of sun electricity of a kind of band protection integrated bypass diode
Chi Zhen includes solar cell as described above.
Background technique
In Space-Work, shadow occlusion or battery itself as caused by aircraft movement solar battery array occur
Problem, so that local cell cisco unity malfunction in solar battery array, for the battery by shadow occlusion, due to other batteries
It works normally, by higher backward voltage, battery will generate heat quickly at this time, lead to permanent lesion.Monolithic battery damage will
Lead to whole string battery failure, for high-power more knot gallium arsenide solar cells, the temporary of certain string battery is failed extreme influence
The work of entire cell array.
Bypass diode is the diode in parallel with battery, it can protect battery connected in parallel from because of local shades
Caused by pyrolytic damage, and then avoid whole string battery failure, therefore bypass diode has the normal work of protection solar battery array
Important role.
An a kind of primary corrosion of caustic solution (application number 201410655829.5) use of multijunction gallium arsenide solar cell
Isolation channel and scribe line is made in technique, and the solar cell with integrated bypass diode is made, and diode-isolated slot is in battery side
Edge.Isolation channel and scribe line are substantially Ge substrate, and the difference in height between isolation channel and front electrode is the thickness of intermediate layers of material
The sum of degree, only several microns have the risk mutually connected in flakes welded with diode front.
When cell array makes, the integrated bypass diode of every battery a piece of battery under is interconnected, integrated bypass diode
Front electrode is generally connected to the rear electrode of adjacent cell by mutually welding and drawing in flakes, and it is micro- to be mutually generally thickness more than ten in flakes
, there is the risk contacted with isolation channel, will lead to this piece shorted diode after mutually contacting in flakes with isolation channel in the thin silver film of rice, lose
Effect is deprotected, and will cause the battery short circuit being in parallel with it and fail, since welding is completed, such failure is difficult to do over again.
The battery failure as caused by connection short circuit happens occasionally at present, causes greater loss to production cost, needs to invent a kind of energy
Enough avoid the integrated diode with safeguard function of such failure.
The manufacturing method (application number 200810204034.7) of new round-angle integrated bypass diode for high-efficiency solar batteries is adopted
With the method for preparing fillet diode, the risk that electrostatic breakdown occurs is reduced, improves diode reliability, but do not refer to
Means of defence at isolation channel.
A kind of two poles of solar cell production method (application number 201510883143.6) use preparation with integrated diode
The method of tube edges protective layer avoids diode PN junction edge current leakage, optimizes PN junction quality, but do not refer at isolation channel
Means of defence, and make protective layer needs and additionally increase a photoetching process on the basis of original manufacturing process.
Summary of the invention
Technology of the invention solves the problems, such as: overcome the deficiencies in the prior art, proposes a kind of band protection two pole of integrated bypass
Solar cell of pipe and preparation method thereof.
The technical solution of the invention is as follows:
A kind of solar cell of band protection integrated bypass diode, which includes Ge substrate, bottom battery, middle electricity
Pond, top battery, cap layer, top electrode, lower electrode and oxide antireflective coating；
The lower surface of Ge substrate is lower electrode, and lower electrode is vaporized on the lower surface of Ge substrate by way of evaporation metal；
The upper surface of Ge substrate is from left to right divided into four areas, respectively the firstth area, the secondth area, third area and the 4th area；
Successively extension has bottom battery, middle battery, top battery, cap layer, cap from top to bottom in firstth area of Ge upper surface of substrate
Sublayer upper surface is top electrode, and top electrode is vaporized on the upper surface of cap layer by way of evaporation metal, and area accounts for percent
Three hereinafter, and be located at the right side of bottom battery in the firstth area of Ge upper surface of substrate, middle battery right side, push up the right side of battery
Oxide antireflective coating is vapor-deposited on the right side in face, the right side of cap layer and top electrode, meanwhile, it is located at table on Ge substrate
The non-solder area of the top electrode upper surface in the firstth area of face is vapor-deposited with oxide antireflective coating；
Successively extension has bottom battery, middle battery, top battery, cap layer, cap from top to bottom in the third area of Ge upper surface of substrate
Sublayer upper surface is top electrode, and top electrode is vaporized on the upper surface of cap layer, cap layer upper surface by way of evaporation metal
Middle section have top electrode, area is about %, and be located at Ge upper surface of substrate third area bottom battery left side and right side
Face, the left side of middle battery and right side, push up battery left side and right side, the left side of cap layer and right side and on
Oxide antireflective coating is vapor-deposited on the left side and right side of electrode；
Secondth area of Ge upper surface of substrate is vapor-deposited with oxide antireflective coating；
4th area of Ge upper surface of substrate is vapor-deposited with oxide antireflective coating；
The material of bottom battery is Ge (forming N-shaped by doping)；
The material of middle battery is InGaAs；
The material for pushing up battery is GaInP；
The material of cap layer is GaAs；
The material of top electrode is Au/AuGeNi/Au/Ag/Au；
The material of lower electrode is Pd/Ag/Au；
The material of oxide antireflective coating is Al2O3/Ti3O5。
A kind of the step of production method of the solar cell of band protection integrated bypass diode, this method includes:
(1) Pd/Ag/Au material is deposited in the lower surface of epitaxial wafer, forms lower electrode；
Epitaxial wafer includes Ge substrate, bottom battery, middle battery, top battery and cap layer；
(2) by photoetching, the upper surface of epitaxial wafer is from left to right divided into four areas, respectively the firstth area, the secondth area, the
Ge substrate is exposed using the method for corrosion in the secondth area and the 4th area in 3 area and the 4th area；Also corrode dew in the front and back in third area
Out, to make the secondth area and the 4th Qu Liantong.
(3) using photoetching, vapor deposition method the firstth area cap layer upper surface partial region and third area cap
The intermediate region of the upper surface of sublayer grows Au/AuGeNi/Au/Ag/Au material, forms top electrode；
(4) by photoetching, vapor deposition method the firstth area the right side of epitaxial wafer, the right side of top electrode, top electrode
The non-solder area of upper surface, the cap layer exposed upper surface, and third area epitaxial wafer left side and right side,
Leading flank and trailing flank, equal evaporating Al on the left side and right side of top electrode, leading flank and trailing flank2O3/Ti3O5Form oxygen
Compound antireflective coating obtains the solar cell with protection integrated bypass diode.
A kind of solar battery array of band protection integrated bypass diode, which includes several above-mentioned sun
Battery, which is series relationship.
A kind of production method of the solar battery array of band protection integrated bypass diode, steps of the method are: it will be several
A above-mentioned solar cell carries out series connection and forms solar battery array.
The method have the advantages that oxygen is deposited in the side in firstth area, the secondth area, the 4th area and third area
Compound film, while playing the role of following: antireflection layer is formed to battery body, increases the efficiency of light absorption of solar cell；To two
Pole pipe edge forms edge protection layer, avoids diode edge static discharge and P/N from tying edge current leakage, it is reliable to improve diode
Property；Protective layer is formed to diode-isolated slot, mutually contact isolation channel causes shorted diode in flakes when preventing from mutually coupling in flakes, mentions
The reliability of high solar battery array.
Detailed description of the invention
Fig. 1 is solar cell the schematic diagram of the section structure of the invention.
Specific embodiment
As shown in Figure 1, a kind of solar cell of band protection integrated bypass diode, the solar cell include Ge substrate 101,
Bottom battery 102, middle battery 103, top battery 104, cap layer 105, top electrode 106, lower electrode 107 and oxide antireflective coating
108；
The lower surface of Ge substrate 101 is lower electrode 107, and lower electrode 107 is vaporized on Ge substrate by way of evaporation metal
101 lower surface；
The upper surface of Ge substrate 101 is from left to right divided into four areas, respectively the firstth area, the secondth area, third area and the 4th
Area；
Successively extension has bottom battery 102, middle battery 103, top battery from top to bottom in firstth area of 101 upper surface of Ge substrate
104, cap layer 105,105 upper surface of cap layer are top electrode 106, and top electrode 106 is vaporized on cap by way of evaporation metal
The upper surface of sublayer 105, area account for 3 percent hereinafter, and be located at the firstth area of 101 upper surface of Ge substrate bottom battery 102 the right side
Side, middle battery 103 right side, push up battery 104 right side, the right side of cap layer 105 and the right side of top electrode 106
On be vapor-deposited with oxide antireflective coating 108, meanwhile, positioned at 106 upper surface of top electrode in 101 upper surface of Ge substrate the firstth area
Non-solder area is vapor-deposited with oxide antireflective coating 108；
Successively extension has bottom battery 102, middle battery 103, top battery from top to bottom in the third area of 101 upper surface of Ge substrate
104, cap layer 105,105 upper surface of cap layer are top electrode 106, and top electrode 106 is vaporized on cap by way of evaporation metal
There are top electrode 106 in the upper surface of sublayer 105, the middle section of 105 upper surface of cap layer, and area is about 95%, and are located at Ge and serve as a contrast
The left side and right side, the left side of middle battery 103 and right side of the bottom battery 102 in 101 upper surface third area of bottom, top battery
On 104 left side and right side, the left side of cap layer 105 and right side and the left side and right side of top electrode 106
It is vapor-deposited with oxide antireflective coating 108；
Secondth area of 101 upper surface of Ge substrate is vapor-deposited with oxide antireflective coating 108；
4th area of 101 upper surface of Ge substrate is vapor-deposited with oxide antireflective coating 108；
The material of bottom battery 102 is Ge (forming N-shaped by doping)；
The material of middle battery 103 is InGaAs；
The material for pushing up battery 104 is GaInP；
The material of cap layer 105 is GaAs；
The material of top electrode 106 is Au/AuGeNi/Au/Ag/Au；
The material of lower electrode 107 is Pd/Ag/Au；
The material of oxide antireflective coating 108 is Al2O3/Ti3O5。
A kind of the step of production method of the solar cell of band protection integrated bypass diode, this method includes:
(1) Pd/Ag/Au material is deposited in the lower surface of epitaxial wafer, forms lower electrode 107；
Epitaxial wafer includes Ge substrate 101, bottom battery 102, middle battery 103, top battery 104 and cap layer 105；
(2) by photoetching, the upper surface of epitaxial wafer is from left to right divided into four areas, respectively the firstth area, the secondth area, the
Ge substrate 101 is exposed using the method for corrosion in the secondth area and the 4th area in 3 area and the 4th area；Also corrode the front and back in third area
Expose, to make the secondth area and the 4th Qu Liantong.
(3) using photoetching, vapor deposition method the firstth area cap layer 105 upper surface partial region and third area
The intermediate region of the upper surface of cap layer 105 grows Au/AuGeNi/Au/Ag/Au material, forms top electrode 106；
(4) by photoetching, vapor deposition method the right side of epitaxial wafer in the firstth area, top electrode 106 right side, power on
The non-solder area of 106 upper surface of pole, the cap layer 105 exposed upper surface, and the left side of the epitaxial wafer in third area
With right side, leading flank and trailing flank, equal evaporating Al on the left side and right side of top electrode 106, leading flank and trailing flank2O3/
Ti3O5Oxide antireflective coating 108 is formed, the solar cell with protection integrated bypass diode is obtained.
A kind of solar battery array of band protection integrated bypass diode, which includes several above-mentioned sun
Battery, which is series relationship.
A kind of production method of the solar battery array of band protection integrated bypass diode, steps of the method are: it will be several
A above-mentioned solar cell carries out series connection and forms solar battery array.
The epitaxial layer is divided into battery area (the firstth area), diode region (third area) and isolation channel area between the two
(the secondth area and the 4th area)；
106 top electrode is divided into battery area (the firstth area) electrode, diode region (third area) electrode, the battery area
Electrode and diode region electrode make, simultaneously in same plane；
Battery area (the firstth area) electrode includes main electrode, grid electrode；
Battery area (the firstth area) main electrode be whole face shape, for welding mutually in flakes；
The grid electrode includes the one-dimensional or two-dimensional grid of any direction in the plane, and grid electrode makes most of outer
It is exposed to receive light to prolong layer；
Diode region (third area) electrode is whole face shape, covers the area of 95% or more diode area, is used for
With welding mutually in flakes.
Battery area (the firstth area) electrode and diode region (third area) electrode are mutually not attached to, between described two areas
Without metal in isolation channel；
The isolation channel (the 4th area) is on battery edge cutting line；
108 oxidation film may include multilevel oxide, should cover in addition to the firstth area main electrode welding section and
Other all areas and its side other than third area electrode welding zone, are once deposited by the method for photoetching, vapor deposition.
The present invention is described in further detail below in conjunction with the drawings and specific embodiments.It should be noted that attached drawing is adopted
Only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention with very simplified form.
Step 1: preparing upper electrode, battery body electrode and diode electrode region are determined by photolithography plate, pass through electricity
The top electrode of diode and battery body is made in beamlet evaporation Au/AuGeNi/Au/Ag/Au；
Step 2: preparing isolation channel, diode-isolated slot region is determined by photolithography plate, isolation channel is cut in battery edge
On secant, once remove the sub- battery material of GaInP/GaAs in isolation channel region by wet etching, expose Ge substrate formed every
From slot；
Step 3: preparing lower electrode and lower electrode is made by electron beam evaporation Pd/Ag/Au below Ge substrate；
Step 4: high temperature alloy makes the above-mentioned epitaxial wafer for preparing electrode be in 20min in 400 DEG C of high temperature, make metal and
Epitaxial wafer generates Ohmic contact, reduces contact resistance.
Step 5: vapor deposition oxidation film makes photoresist overlay welding section by photoetching, passes through electron beam evaporation certain thickness
Al2O3/Ti3O5To diode edge, isolation channel and battery sensitive area.
Embodiment
A kind of solar cell of band protection integrated bypass diode, the solar cell include Ge substrate 101, bottom battery 102,
Middle battery 103, top battery 104, cap layer 105, top electrode 106, lower electrode 107 and oxide antireflective coating 108；
The lower surface of Ge substrate 101 is lower electrode 107, and lower electrode 107 is vaporized on Ge substrate by way of evaporation metal
101 lower surface；
The upper surface of Ge substrate 101 is from left to right divided into four areas, respectively the firstth area, the secondth area, third area and the 4th
Area；
Successively extension has bottom battery 102, middle battery 103, top battery from top to bottom in firstth area of 101 upper surface of Ge substrate
104, cap layer 105,105 upper surface of cap layer are top electrode 106, and top electrode 106 is vaporized on cap by way of evaporation metal
The upper surface of sublayer 105, area is 3 percent, and is located at the right side of the bottom battery 102 in the firstth area of 101 upper surface of Ge substrate
On face, the right side of middle battery 103, the right side for pushing up battery 104, the right side of cap layer 105 and the right side of top electrode 106
Be vapor-deposited with oxide antireflective coating 108, meanwhile, positioned at the firstth area of 101 upper surface of Ge substrate 106 upper surface of top electrode it is non-
Welding section is vapor-deposited with oxide antireflective coating 108；
Successively extension has bottom battery 102, middle battery 103, top battery from top to bottom in the third area of 101 upper surface of Ge substrate
104, cap layer 105,105 upper surface of cap layer are top electrode 106, and top electrode 106 is vaporized on cap by way of evaporation metal
The upper surface of sublayer 105, there are top electrode 106, area 95% in the middle section of 105 upper surface of cap layer, and is located at Ge substrate
The left side and right side, the left side of middle battery 103 and right side of the bottom battery 102 of 101 upper surfaces third area, top battery
On 104 left side and right side, the left side of cap layer 105 and right side and the left side and right side of top electrode 106
It is vapor-deposited with oxide antireflective coating 108；
Secondth area of 101 upper surface of Ge substrate is vapor-deposited with oxide antireflective coating 108；
4th area of 101 upper surface of Ge substrate is vapor-deposited with oxide antireflective coating 108；
The material of bottom battery 102 is Ge, forms N-shaped by doping；
The material of middle battery 103 is InGaAs；
The material for pushing up battery 104 is GaInP；
The material of cap layer 105 is GaAs；
The material of top electrode 106 is Au/AuGeNi/Au/Ag/Au；
The material of lower electrode 107 is Pd/Ag/Au；
The material of oxide antireflective coating 108 is Al2O3/Ti3O5。
A kind of the step of production method of the solar cell of band protection integrated bypass diode, this method includes:
(1) Pd/Ag/Au material is deposited in the lower surface of epitaxial wafer, forms lower electrode 107；
Epitaxial wafer includes Ge substrate 101, bottom battery 102, middle battery 103, top battery 104 and cap layer 105；
(2) by photoetching, the upper surface of epitaxial wafer is from left to right divided into four areas, respectively the firstth area, the secondth area, the
Ge substrate 101 is exposed using the method for corrosion in the secondth area and the 4th area in 3 area and the 4th area；Also corrode the front and back in third area
Expose, to make the secondth area and the 4th Qu Liantong.
(3) using photoetching, vapor deposition method the firstth area cap layer 105 upper surface partial region and third area
The intermediate region of the upper surface of cap layer 105 grows Au/AuGeNi/Au/Ag/Au material, forms top electrode 106；
(4) by photoetching, vapor deposition method the right side of epitaxial wafer in the firstth area, top electrode 106 right side, power on
The non-solder area of 106 upper surface of pole, the cap layer 105 exposed upper surface, and the left side of the epitaxial wafer in third area
With right side, leading flank and trailing flank, equal evaporating Al on the left side and right side of top electrode 106, leading flank and trailing flank2O3/
Ti3O5Oxide antireflective coating 108 is formed, the solar cell with protection integrated bypass diode is obtained.
A kind of solar battery array of band protection integrated bypass diode, which includes several above-mentioned sun
Battery, which is series relationship.
A kind of production method of the solar battery array of band protection integrated bypass diode, steps of the method are: it will be several
A above-mentioned solar cell carries out series connection and forms solar battery array.
Solar battery array obtained above is subjected to electric performance test, does not occur battery short circuit phenomenon, the results showed that this hair
The solar cell of bright production has the function of anti-short circuit.
Obviously, those skilled in the art can carry out various changes and deformation without departing from essence of the invention to the present invention
Mind and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (10)
1. a kind of solar cell of band protection integrated bypass diode, it is characterised in that: the solar cell includes Ge substrate, bottom electricity
Pond, middle battery, top battery, cap layer, top electrode, lower electrode and oxide antireflective coating；
The lower surface of Ge substrate is lower electrode；
The upper surface of Ge substrate is from left to right divided into four areas, respectively the firstth area, the secondth area, third area and the 4th area；
Successively extension has bottom battery, middle battery, top battery, cap layer, cap layer from top to bottom in firstth area of Ge upper surface of substrate
Upper surface is top electrode；
Right side, the right side of middle battery, the right side for pushing up battery, the right side of cap layer and the top electrode of first area bottom battery
Right side on be vapor-deposited with oxide antireflective coating；
The non-solder area in the first area top electrode upper surface is vapor-deposited with oxide antireflective coating；
Successively extension has bottom battery, middle battery, top battery, cap layer, cap layer from top to bottom in the third area of Ge upper surface of substrate
There is top electrode in the middle section of upper surface；
The left side and right side of third area bottom battery, the left side of middle battery and right side, the left side and right side for pushing up battery
Face, the left side of cap layer and right side, top electrode left side and right side on be vapor-deposited with oxide antireflective coating；
Secondth area of Ge upper surface of substrate is vapor-deposited with oxide antireflective coating；
4th area of Ge upper surface of substrate is vapor-deposited with oxide antireflective coating.
2. a kind of solar cell of band protection integrated bypass diode according to claim 1, it is characterised in that: lower electrode
The lower surface of Ge substrate, the secondth area and the 4th Qu Liantong, the i.e. oxidation of the secondth area vapor deposition are vaporized on by way of evaporation metal
Object antireflective coating is connected to the oxide antireflective coating 108 that the 4th area is deposited.
3. a kind of solar cell of band protection integrated bypass diode according to claim 1 or 2, it is characterised in that: the
One area's top electrode is vaporized on the upper surface of cap layer by way of evaporation metal, and area accounts for 3 percent or less.
4. a kind of solar cell of band protection integrated bypass diode according to claim 3, it is characterised in that: third area
The top electrode area of the middle section of cap layer upper surface is 95%.
5. a kind of solar cell of band protection integrated bypass diode according to claim 1, it is characterised in that: bottom battery
Material be Ge, by doping form N-shaped.
6. a kind of solar cell of band protection integrated bypass diode according to claim 1, it is characterised in that: middle battery
Material be InGaAs；
The material for pushing up battery is GaInP；
The material of cap layer is GaAs；
The material of top electrode is Au/AuGeNi/Au/Ag/Au；
The material of lower electrode is Pd/Ag/Au.
7. according to a kind of solar cell of any band protection integrated bypass diode of claim 4-6, it is characterised in that:
The material of oxide antireflective coating is Al2O3/Ti3O5。
8. a kind of production method of the solar cell of band protection integrated bypass diode, it is characterised in that the step of this method wraps
It includes:
(1) Pd/Ag/Au material is deposited in the lower surface of epitaxial wafer, forms lower electrode；
Epitaxial wafer includes Ge substrate, bottom battery, middle battery, top battery and cap layer；
(2) by photoetching, the upper surface of epitaxial wafer is from left to right divided into four areas, respectively the firstth area, the secondth area, third area
With the 4th area, Ge substrate is exposed using the method for corrosion in the secondth area and the 4th area；The front and back in third area, which is corroded, exposes, and second
Area and the 4th Qu Liantong；
(3) using photoetching, vapor deposition method the firstth area cap layer upper surface partial region and third area cap layer
Upper surface intermediate region grow Au/AuGeNi/Au/Ag/Au material, formed top electrode；
(4) by photoetching, vapor deposition method on the right side of epitaxial wafer, the right side of top electrode, top electrode in the firstth area table
The non-solder area in face, the cap layer exposed upper surface, and the left side and right side, front side of the epitaxial wafer in third area
Face and trailing flank, equal evaporating Al on the left side and right side of top electrode, leading flank and trailing flank2O3/Ti3O5Form oxide
Antireflective coating obtains the solar cell with protection integrated bypass diode.
9. a kind of solar battery array of band protection integrated bypass diode, it is characterised in that: the solar battery array includes several
Solar cell as claimed in claim 1 to 7, which is series relationship.
10. a kind of production method of the solar battery array of band protection integrated bypass diode, it is characterised in that the step of this method
Are as follows: several solar cells as claimed in claim 1 to 7 are subjected to series connection and form solar battery array.
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