CN110311006A - A kind of multijunction solar cell and production method improving anti-radiation performance - Google Patents
A kind of multijunction solar cell and production method improving anti-radiation performance Download PDFInfo
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- CN110311006A CN110311006A CN201910697039.6A CN201910697039A CN110311006A CN 110311006 A CN110311006 A CN 110311006A CN 201910697039 A CN201910697039 A CN 201910697039A CN 110311006 A CN110311006 A CN 110311006A
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- 230000003471 anti-radiation Effects 0.000 title claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims abstract description 81
- 239000000463 material Substances 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims description 20
- 238000001039 wet etching Methods 0.000 claims description 15
- 230000005611 electricity Effects 0.000 claims description 12
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- 238000005516 engineering process Methods 0.000 claims description 7
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 6
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
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- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0725—Multiple junction or tandem solar cells
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
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Abstract
The application provides a kind of multijunction solar cell and production method for improving anti-radiation performance, the multijunction solar cell, including at least the sub- battery of InGaAs and the sub- battery of GaInP, wherein the sub- battery of GaInP is top battery, the sub- battery of InGaAs is intermediate cell, top battery is additionally provided with light guide contact layer away from the side of intermediate cell, and the material of light guide contact layer is GaInP or AlGaInP.Ohmic contact layer in the prior art is replaced using light guide contact layer, ohmic contact layer is avoided to absorb top battery GaInP and the corresponding absorption spectrum of the sub- battery of intermediate cell InGaAs, therefore, it can be improved the extinction efficiency of top battery GaInP, particularly the sub- battery of intermediate cell InGaAs.Since the extinction efficiency of the sub- battery of InGaAs improves, its corresponding photoelectric conversion efficiency increases, and the thickness of middle subcell can reduce, and then improves the anti-radiation performance of multijunction solar cell.
Description
Technical field
The present invention relates to technical field of solar batteries more particularly to a kind of multi-junction solar electricity for improving anti-radiation performance
Pond and production method.
Background technique
Solar energy can be converted directly into electric energy by solar battery, be a kind of most effective clean energy resource form.Iii-v
Compound semiconductor solar battery transfer efficiency highest in current material system, while having that high temperature resistance is good, anti-spoke
The advantages that strong according to ability, is acknowledged as high performance and long service life space of new generation main power source, wherein GaInP/InGaAs/Ge lattice
Three junction batteries of mating structure are used widely in space industry.
There are high energy charged particles radiation for space application environment, these charged particles, which enter solar battery, makes lattice atoms
It is subjected to displacement, forms the lattice defects such as a large amount of vacancy, interstitial atom and complex.These defects can become the compound of carrier
Center leads to the photo-generated carrier lost of life, reduces the photoelectric conversion efficiency of solar battery, directly affects the in-orbit of spacecraft
Working life and reliability.
Therefore, the anti-radiation performance of solar battery how is improved, and then improves the photoelectric conversion efficiency of solar battery
As urgent problem to be solved.
Summary of the invention
In view of this, the present invention provides a kind of multijunction solar cell and production method for improving anti-radiation performance, with solution
Certainly solar battery capability of resistance to radiation is limited in the prior art, the problem for causing the photoelectric conversion efficiency of solar battery lower.
To achieve the above object, the invention provides the following technical scheme:
A kind of multijunction solar cell improving anti-radiation performance, comprising:
At least three knot batteries, include at least in the three knots battery the battery of InGaAs and the sub- battery of GaInP or
The sub- battery of AlGaInP, the sub- battery of the GaInP or the sub- battery of AlGaInP are the top battery of the multijunction solar cell, described
The sub- battery of InGaAs is the intermediate cell between the bottom battery and the top battery of the multijunction solar cell；
Deviate from the light guide contact layer of bottom battery side positioned at the top battery；
Positioned at the light guide contact layer away from the transparent electrode of the top battery side, the transparent electrode is grid line knot
Structure, and the projection overlapping of the light guide contact layer and the transparent electrode on the top battery；
Wherein, the material of the light guide contact layer is GaInP or AlGaInP.
Preferably, further includes:
Ohmic contact layer, the ohmic contact layer are located at the light guide contact layer towards the surface of the transparent electrode；
Wherein, the material of the ohmic contact layer is AuGeNi.
Preferably, the thickness range of the ohmic contact layer is 2nm-10nm, including endpoint value.
Preferably, the thickness range of the light guide contact layer is 0.2 μm -1 μm, including endpoint value；The light guide contact layer
For n-contact layer, the doping concentration range of p-type impurity is 1 × 1018/cm3~1 × 1019/cm3, including endpoint value.
Preferably, the transparent electrode is ITO electrode, IZO electrode, IGZO electrode, AZO electrode or Graphene electrodes.
Preferably, further includes: etch stop layers；
The etch stop layers are located at the light guide contact layer towards the surface of the bottom battery.
Preferably, the etch stop layers are N-shaped AlGaAs material.
Preferably, the thickness range of the etch stop layers is 1nm-20nm, including endpoint value；Wherein, Al component is greater than
0.35, and less than 1.
Preferably, the multijunction solar cell is three-joint solar cell, and the three-joint solar cell includes:
Battery and top battery along the bottom Ge battery that the direction of growth is set gradually, InGaAs, the top battery are that GaInP is pushed up
Battery or AlGaInP push up battery.
Preferably, the multijunction solar cell is four-junction solar cell, and the four-junction solar cell includes:
The sub- battery of Ge first, the sub- battery of InGaAs second, the sub- battery of AlInGaAs third set gradually along the direction of growth
With the sub- battery of GaInP the 4th or the sub- battery of AlGaInP the 4th.
The present invention also provides a kind of multijunction solar cell production methods for improving anti-radiation performance, are formed for making
The multijunction solar cell of anti-radiation performance is improved described in any one of face, the production method includes:
Substrate is provided；
Bottom battery is formed in the side of the substrate；
The sub- battery of InGaAs is formed away from the side of the substrate in the bottom battery；
The sub- battery of GaInP is formed away from the side of the substrate in the sub- battery of the InGaAs；
It grows to form light guide contact layer away from the side of the sub- battery of the InGaAs in the sub- battery of the GaInP, the light
The material for connecting contact layer is GaInP or AlGaInP；
Transparent electrode is formed away from the side of the sub- battery of the GaInP in the light guide contact layer；
Wherein, the transparent electrode is grid line structure, and the light guide contact layer and the transparent electrode are in the top electricity
Projection overlapping on pond.
Preferably, it grows to form light guide contact layer away from the side of the sub- battery of the InGaAs in the sub- battery of the GaInP
Before, can also include:
Etch stop layers are formed away from the surface of the sub- battery of the InGaAs in the sub- battery of the GaInP；
The light guide contact layer of flood is formed away from the surface of the sub- battery of the GaInP in the etch stop layers；
The part light guide contact layer and the etch stop layers are removed using wet-etching technology, to form grid line structure
Light guide contact layer.
It can be seen via above technical scheme that the multijunction solar cell provided in the present invention for improving anti-radiation performance,
Including at least the sub- battery of InGaAs and the sub- battery of GaInP, wherein the sub- battery of GaInP is top battery, and the sub- battery of InGaAs is centre
Battery, top battery are additionally provided with light guide contact layer away from the side of intermediate cell, and the light guide contact layer deviates from the one of top battery
Side is provided with transparent electrode, and the material of light guide contact layer is GaInP or AlGaInP in the present invention.It is replaced using light guide contact layer
Ohmic contact layer in the prior art.Since the absorption spectrum of light guide contact layer is mainly to absorb 0.25 μm of -0.65 μm of section
Sunlight, and to the main absorption spectrum of the sub- battery of intermediate cell InGaAs without absorption, therefore, it can be improved intermediate cell InGaAs
The extinction efficiency of sub- battery.Since the extinction efficiency of the sub- battery of InGaAs improves, its corresponding photoelectric conversion efficiency increases,
Based on this, the thickness of the sub- battery of middle subcell InGaAs can be reduced.
And inventor has found under space environment, the electrical property that battery ratio GaInP pushes up battery in InGaAs fails fastly,
I.e. the Radiation hardness of InGaAs is in contrast weaker, after reducing the thickness of the sub- battery of InGaAs, opposite can mention
The Radiation hardness of high InGaAs, and then improve the anti-radiation performance of entire multijunction solar cell.
Simultaneously as light guide contact layer only absorbs the corresponding partial spectrum of top battery, and using after transparent electrode, top is electric
Pond receives light and increases, extinction efficiency of the multijunction solar cell provided in the present invention for improving anti-radiation performance to top battery
It improves.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of multijunction solar cell structural schematic diagram for improving anti-radiation performance provided in an embodiment of the present invention；
Fig. 2 is another multijunction solar cell structural representation for improving anti-radiation performance provided in an embodiment of the present invention
Figure；
Fig. 3 is a kind of three-joint solar cell structural schematic diagram of formal dress Lattice Matching provided in an embodiment of the present invention；
Fig. 4 is a kind of three-joint solar cell structural schematic diagram of formal dress lattice mismatch provided in an embodiment of the present invention；
Fig. 5 is a kind of four-junction solar cell structural schematic diagram of formal dress lattice mismatch provided in an embodiment of the present invention.
Specific embodiment
Just as described in the background section, the Radiation hardness of multijunction solar cell is limited in the prior art, in space
It in application environment, is easy to be radiated by high energy charged particles, be reduced so as to cause the photoelectric conversion efficiency of solar battery.
Inventors have found that the main reason for above-mentioned phenomenon occur is, it is widely used in the more of space industry in the prior art
GaInP top battery and InGaAs intermediate cell are generally included in joint solar cell.Under space environment, InGaAs intermediate cell
Electrical property than the top GaInP battery fails fastly, therefore the anti-radiation performance for how improving the sub- battery of InGaAs answers space
It is significant with the middle anti-radiation performance for improving solar cell and reliability.
So, it in order to improve the anti-radiation performance of solar battery, needs guaranteeing solar battery entirety photoelectric conversion
In the case that efficiency is higher or constant, reduce the accounting of InGaAs intermediate cell.Inventors have found that in the prior art, existing
Iii-v solar cell element manufacturing in, bullion grid line design is generallyd use, so as to preferably collect and transmit
Photo-generated carrier.
But opaque metal gate electrode can reflect and absorb incident ray, reduce effective light of solar cell device
Area, and then reduce cell output.So optimization grid line and electrode structure are transparent electrode, and by transparent electrode and
Ohmic contact layer is set between the battery of top, transparent electrode and top battery are electrically connected.It also can be reduced the noble metals such as gold and silver in this way
The use of electrode is significant for the preparation cost for reducing iii-v solar cell chip.
Although extinction area increases, it is discovered by experiment that the photoelectric conversion efficiency of solar battery is promoted,
But anti-radiation performance is again without being obviously improved.Inventors have found that this is because the material of ohmic contact layer is in the prior art
InGaAs material, since ohmic contact layer also absorbs sunlight spectrum, and it is sub with the intermediate cell InGaAs in solar battery
The absorption spectrum of battery is identical.When sunlight enters back into sub- battery by ohmic contact layer, intermediate cell InGaAs's
Absorbable spectrum absorbs a part by ohmic contact layer, therefore the photoelectric conversion efficiency of intermediate cell InGaAs does not mention
Rise, promotion be other sub- batteries photoelectric conversion efficiency.And due under space environment, InGaAs intermediate cell ratio GaInP
The electrical property of top battery fails fastly, and there is no promoted for the anti-radiation performance of solar battery.
Based on this, the present invention provides a kind of multijunction solar cell for improving anti-radiation performance, comprising:
At least three knot batteries, include at least in the three knots battery the battery of InGaAs and the sub- battery of GaInP or
The sub- battery of AlGaInP, the sub- battery of the GaInP or the sub- battery of AlGaInP are the top battery of the multijunction solar cell, described
The sub- battery of InGaAs is the intermediate cell between the bottom battery and the top battery of the multijunction solar cell；
Deviate from the light guide contact layer of bottom battery side positioned at the top battery；
Positioned at the light guide contact layer away from the transparent electrode of the top battery side, the transparent electrode is grid line knot
Structure, and the projection overlapping of the light guide contact layer and the transparent electrode on the top battery；
Wherein, the material of the light guide contact layer is GaInP or AlGaInP.
The material of light guide contact layer is GaInP or AlGaInP in the present invention.It is replaced in the prior art using light guide contact layer
Ohmic contact layer.Since the absorption spectrum of light guide contact layer is mainly the sunlight for absorbing 0.25 μm of -0.65 μm of section, and it is right
The main absorption spectrum absorption of the sub- battery of intermediate cell InGaAs is less, therefore, can be improved the sub- battery of intermediate cell InGaAs
Extinction efficiency.Since the extinction efficiency of the sub- battery of InGaAs improves, its corresponding photoelectric conversion efficiency increases, and is based on this,
The thickness of the sub- battery of middle subcell InGaAs can reduce.After reducing the thickness of the sub- battery of InGaAs, InGaAs electricity
Pond accounts for smaller, is capable of the opposite Radiation hardness for improving InGaAs, and then improve the Flouride-resistani acid phesphatase of entire multijunction solar cell
Performance.
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
The multijunction solar cell provided in an embodiment of the present invention for improving anti-radiation performance, as shown in Figure 1, comprising:
At least three knot batteries, include at least in the three knots battery the battery 01 of InGaAs and the sub- battery of GaInP or
The sub- battery 02 of AlGaInP, the sub- battery of GaInP or the sub- battery 02 of AlGaInP are the top battery of multijunction solar cell, InGaAs
Battery 01 is the intermediate cell between the bottom battery 03 and top battery 02 of multijunction solar cell；Positioned at top, battery 02 deviates from
The light guide contact layer 04 of 03 side of bottom battery；Positioned at light guide contact layer 04 away from the transparent electrode 05 of top battery side, transparent electricity
Pole 05 is grid line structure, and the projection of light guide contact layer 04 and transparent electrode 05 on the battery 02 of top is overlapped；Wherein, light guide contact
The material of layer 04 is GaInP or AlGaInP.
The specific knot number of multijunction solar cell is not limited in the embodiment of the present invention, the multijunction solar cell can be
Three-joint solar cell is also possible to four-junction solar cell, moreover, the three-joint solar cell and four-junction solar cell
The multijunction solar cell that can be Lattice Matching is also possible to the multijunction solar cell of lattice mismatch, the embodiment of the present invention
In this is not construed as limiting.Wherein, the three-joint solar cell may include: the bottom the Ge battery set gradually along the direction of growth,
Battery and GaInP push up battery in InGaAs.The four-junction solar cell may include: the Ge set gradually along the direction of growth
One sub- battery, the sub- battery of InGaAs second, the sub- battery of AlInGaAs third and the sub- battery of GaInP the 4th.
Transparent electrode 05 is the biggish conductive material of light transmittance in the embodiment of the present invention, in one embodiment of the present of invention
In, the material of the transparent electrode is tin indium oxide, the zinc oxide or graphene for mixing Al.That is, the transparent electrode is oxidation
Indium tin electrode, the zinc oxide electrode or Graphene electrodes for mixing Al.
It should be noted that in order to improve the Ohmic contact between light guide contact layer and transparent electrode, the embodiment of the present invention
In, it can also include ohmic contact layer 06, refer to Fig. 2, Fig. 2 is another multi-junction solar electricity provided in an embodiment of the present invention
Pool structure schematic diagram；The ohmic contact layer is located at the light guide contact layer towards the surface of the transparent electrode；Wherein, described
The material of ohmic contact layer is AuGeNi.In order to guarantee preferable Ohmic contact effect and avoid ohmic contact layer to light absorption
More, optional in the embodiment of the present invention, the thickness range of ohmic contact layer is 2nm-10nm, including endpoint value.Due to ohm
Contact layer material is metal alloy, and when thinner thickness, essentially transparent configuration is less to the absorption of light.But thickness is too thin, then
Ohmic contact effect is not had, therefore, limits its thickness range.
Likewise, when the thickness of light guide contact layer is larger, it is more to light absorption, to the absorbable spectrum of the top GaInP battery
Absorb it is more, influence GaInP top battery photoelectric conversion efficiency.When light guide contact layer thinner thickness, contact can not be played
Effect, therefore, in the embodiment of the present invention, the thickness range of light guide contact layer is 0.2 μm -1 μm, including endpoint value；The present embodiment
Described in light guide contact layer be n-contact layer, the doping concentration range of p-type impurity is 1 × 1018/cm3~1 × 1019/cm3, packet
Include endpoint value.
The production method of multijunction solar cell is not limited in the embodiment of the present invention, it should be noted that due to transparent electricity
Extremely grid line structure, and light guide contact layer is Chong Die with projection of the transparent electrode on the battery of top, light guide connects in the embodiment of the present invention
Contact layer is also grid line structure.In the production process, the light guide contact layer of grid line structure can be formed using wet-etching technology,
The light guide contact layer of grid line structure can also be formed using dry etch process, this is not construed as limiting in the present embodiment.It needs
It is bright, when forming the light guide contact layer of grid line structure using wet-etching technology, in order to control the essence of wet etching
It spends, further includes etch stop layers in the present embodiment, the etch stop layers are located at the light guide contact layer towards the bottom battery
Surface.In this way, in the production process, it, can be on etch stop layers when wet etching light guide contact layer forms grid line structure
Stop, to control the etching precision of wet etching.
The material of the etch stop layers is not identical as the material of light guide contact layer, and when use wet-etching technology, carves
It is larger to lose rate difference, ends so as to play the role of corrosion, optional in the present embodiment, the etch stop layers are n
Type AlGaAs material.Optionally, the thickness range of etch stop layers is 1nm-20nm, including endpoint value；Wherein, Al component is greater than
0.35, and less than 1.
It is provided in the present invention improve anti-radiation performance multijunction solar cell, include at least the sub- battery of InGaAs and
The sub- battery of GaInP, wherein the sub- battery of GaInP is top battery, and the sub- battery of InGaAs is intermediate cell, and top battery deviates from intermediate cell
Side be additionally provided with light guide contact layer, the light guide contact layer is provided with transparent electrode away from the side of top battery, the present invention
The material of middle light guide contact layer is GaInP or AlGaInP.Ohmic contact layer in the prior art is replaced using light guide contact layer.
Since the absorption spectrum of light guide contact layer is mainly the sunlight for absorbing 0.25 μm of -0.65 μm of section, and to intermediate cell
The main absorption spectrum absorption of the sub- battery of InGaAs is less, therefore, can be improved the extinction efficiency of the sub- battery of intermediate cell InGaAs.
Since the extinction efficiency of the sub- battery of InGaAs improves, its corresponding photoelectric conversion efficiency increases, and is based on this, middle subcell
The thickness of the sub- battery of InGaAs can reduce.
And inventor has found under space environment, the electrical property that battery ratio GaInP pushes up battery in InGaAs fails fastly,
I.e. the Radiation hardness of InGaAs is in contrast weaker, after reducing the thickness of the sub- battery of InGaAs, opposite can mention
The Radiation hardness of high InGaAs, and then improve the anti-radiation performance of entire multijunction solar cell.
It should be noted that the multijunction solar cell provided in an embodiment of the present invention for improving anti-radiation performance, further includes
Other structures, such as positioned at the double layer antireflection coating of transparent electrode exterior domain, the double layer antireflection coating can pass through vapor deposition
Al2O3And TiO2It is formed, is not elaborated to this in the embodiment of the present invention.Main electrode is additionally included, main electrode is used for will
The electric current of electrically conducting transparent gate line electrode is collected, and is exported to solar battery, is powered for other electrical components.
Fig. 3 is referred to, Fig. 3 is a kind of formal dress three-joint solar cell structural schematic diagram provided in an embodiment of the present invention, institute
The direction of growth for stating formal dress three-joint solar cell layers structure is from bottom to top.As shown in Figure 3, the three knot sun of formal dress
Energy battery structure specifically includes that
Ge substrate 11 is grown on Ge substrate using metal organic chemical vapor deposition deposition MOCVD method, under
Supreme the first sub- battery 12 for successively growing formation, the first tunnel junctions 13, the reflecting layer DBR 14, the second sub- battery 15, the second tunnelling
The sub- battery 17 of knot 16, third, etch stop layers 18, light guide contact layer 19, ohmic contact layer 110 and transparent electrode 111, wherein
Ohmic contact layer 110 is AuGeNi material.
Passing through tunnel junctions between three sub- batteries to connect, wherein the first sub- battery is the bottom Ge battery, described the
Two sub- batteries are battery in InGaAs, and the sub- battery of third is that GaInP or AlGaInP pushes up battery.
Wherein, the first sub- battery 12 includes: and carries out phosphorus diffusion in p-type Ge substrate to obtain N-shaped emitter region and by p-type
Growth and GaInP layer of substrate lattice matched (Al) are as nucleating layer above Ge substrate, and the Window layer as the first sub- battery.
Wherein, GaInP layers of (Al) represents GaInP layers or AlGaInP layers.
First tunnel junctions 13 include N-type layer and p-type (Al) the GaAs material of N-shaped GaAs or N-shaped GaInP as the first tunnel junctions
Expect the P-type layer as the first tunnel junctions, wherein Si and C doping is respectively adopted in N-type and p-type doping.
The reflecting layer DBR 14, the stepped construction being alternatively formed including the first layer material of multilayer and the second layer material.Its
In, first layer materials A lxInGaAs, second layer materials A lyInGaAs, wherein 0≤x < y≤1.N week of materials at two layers alternating growth
Phase, 3≤n≤30.
Second sub- battery 15 successively includes back surface field layer, InGaAs layers of base area of p-type doping, n-type doping InGaAs from top to bottom
Layer emitter region, Window layer.Wherein back surface field layer chooses GaInP or AlGaAs material, and Window layer chooses AlGaInP or AlInP material.
Second tunnel junctions 16 include N-type layer and p-type (Al) of the N-shaped InGaAs or N-shaped GaInP as the second tunnel junctions
P-type layer of the InGaAs material as the second tunnel junctions, wherein Si and C doping is respectively adopted in N-type and p-type doping.
The sub- battery 17 of third successively includes AlGaInP or GaInP layers of AlGaInP back surface field layer, p-type doping base from the bottom up
Area, n-type doping AlGaInP or GaInP floor emitter region, AlInP Window layer.
Light guide contact layer 19 includes GaInP layer of (Al) as the N-type contact layer with the formation Ohmic contact of transparent electrode 111,
0.2 μm -1 μm of thickness, including endpoint value, the doping concentration range of p-type impurity are 1 × 1018/cm3~1 × 1019/cm3, including end
Point value.
In the present embodiment, the AlInP Window layer and light guide contact layer 19 of the sub- battery 17 of third is arranged in etch stop layers 18
Between, the AlGaAs material of n-type doping is chosen, thickness 1nm-20nm, Al component is greater than 0.35 less than 1.
In addition, the other parts of solar battery structure not shown in the figure, such as deviate from the first sub- battery in Ge substrate
Surface the back metal electrode to be formed is deposited；The sub- battery of third away from Ge substrate surface formed with electrically conducting transparent grid line
The main electrode that electrode is electrically connected, zinc oxide (AZO), the IZO that transparent conductive material can use tin indium oxide (ITO), mix Al
(indium zinc oxide), IGZO (indium gallium zinc oxide) or graphene.It can also include metal main electrode in the present embodiment, be led with transparent
The main electrode of electrode forms good ohmic contact, for connecting the solar cell and external circuit.It further include being located at electrode zone
Outer antireflective coating, the antireflective coating are the Al that vapor deposition is formed2O3/TiO2Double layer antireflection coating.
Since light guide contact layer is grid line structure, in the production process, light guide contact layer, a side are removed using dry etching
Face increases process complexity and cost, and another aspect controllable degree is also poor.
Therefore, in the embodiment of the present invention, using AlGaAs material as etch stop layers, the sub- battery 17 of third is set
Between AlInP Window layer and light guide contact layer (Al) GaInP, cooperate the light guide contact layer of (Al) GaInP, so that solar cell core
It is effective after eroding light guide contact layer to control wet etching course when AlInP window layer surface makes antireflective film for blade technolgy
Stop, next proceeding through wet etching method and remove this layer of etch stop layers, expose AlInP Window layer.If without this
One layer, since the AlInP Window layer of the sub- battery 17 of light guide contact layer and third of (Al) GaInP belongs to P compound material, with change
When learning solution wet etching removal light guide contact layer, effectively control corrosion rate process light guide contact layer and Window layer can not be stopped at
Interface.
The prior art is used as ohmic contact layer using GaAs layer of (In), since its band gap is less than GaInP, so this layer for
The absorption spectrum ranges of GaInP battery and (In) GaAs battery are extinction or part extinction, even if being made using transparent electrode
For the gate electrode line of solar cell chip, for being irradiated to the spectral region in gate line electrode region in GaInP battery and (In)
The light of GaAs battery absorption region still can be absorbed through electrode by (In) GaAs ohmic contact layer, be unprofitable to improve battery
Anti-radiation performance and transfer efficiency.
The formal dress three-joint solar cell provided in the embodiment of the present invention, using GaInP or AlGaInP material as light guide
Contact layer, cooperation use gate electrode line of the transparent electrode as solar cell chip.It is irradiated to the light in gate line electrode region, wherein
Spectral region can be partially absorbed in the light of GaInP battery absorption region through electrode by GaInP light guide contact layer, and spectral region
GaInP light guide contact layer and the sub- battery of GaInP can be penetrated through electrode in the light of (In) GaAs battery absorption region, to increase
The light absorption of the sub- battery of (In) GaAs, then can accordingly reduce the base area thickness of the sub- battery of (In) GaAs, to improve electricity
The anti-radiation performance and transfer efficiency in pond.
It should be noted that being to be in above example with the GaInP/InGaAs/Ge three-junction solar battery of Lattice Matching
What example was illustrated, likewise, light guide contact layer provided by the invention can equally be suitable for the GaInP/ of lattice mismatch
The GaInP/AlInGaAs/InGaAs/Ge four-junction solar battery of InGaAs/Ge three-junction solar battery and lattice mismatch, this reality
It applies in example and does not elaborate to this.
Fig. 4 is referred to, Fig. 4 is a kind of three-joint solar cell structure of positive lattice mismatch provided in an embodiment of the present invention
Schematic diagram；Unlike the three-joint solar cell structure of positive Lattice Matching above, in the present embodiment, the three of lattice mismatch
Joint solar cell further includes metamorphic buffer layer 112, wherein metamorphic buffer layer 112 is located at the reflecting layer DBR 14 and the first tunnel junctions
Between 13.
Fig. 5 is referred to, Fig. 5 is a kind of positive four-junction solar cell structural schematic diagram provided in an embodiment of the present invention；Institute
Stating positive four-junction solar cell structure is GaInP/AlInGaAs/InGaAs/Ge forward direction four-junction solar cell, using metal
Metalorganic Chemical Vapor epitaxial deposition MOCVD method is grown on Ge substrate, and four sub- batteries successively include: along the direction of growth
First sub- battery, the second sub- battery, the sub- battery of third and the 4th sub- battery；Wherein, the first sub- battery is Ge battery；Second son
Battery is the sub- battery of InGaAs that band gap is 1.0eV；The sub- battery of third is the sub- battery of AlInGaAs that band gap is 1.4eV；4th
Sub- battery is the sub- battery of AlGaInP or the sub- battery of GaInP that band gap is 1.9eV；Wherein, the second sub- battery and the sub- battery of third are equal
For the sub- battery of lattice mismatch.
It specifically, as shown in Figure 5, from bottom to up successively include the first sub- battery 21, the first tunnel junctions 22, rotten buffering
Layer 23, the reflecting layer DBR 24, the second sub- battery 25, the second tunnel junctions 26, the sub- battery 27 of third, the 28, the 4th son electricity of third tunnel junctions
Pond 29, light guide contact layer 210, ohmic contact layer 211 and transparent electrode 212.
The either formal dress lattice mismatch three-joint solar cell or formal dress lattice mismatch provided in the embodiment of the present invention
Four-junction solar cell, can be using GaInP or AlGaInP material as light guide contact layer, and cooperation is made using transparent electrode
For the gate electrode line of solar cell chip.It is irradiated to the light in gate line electrode region, wherein spectral region absorbs model in GaInP battery
The light enclosed can be partially absorbed through electrode by GaInP light guide contact layer, and spectral region is in (In) GaAs battery absorption region
Light can penetrate GaInP light guide contact layer and the sub- battery of GaInP through electrode, so that the light for increasing the sub- battery of (In) GaAs is inhaled
It receives, then can accordingly reduce the base area thickness of the sub- battery of (In) GaAs, to improve the anti-radiation performance and conversion effect of battery
Rate.
Based on identical inventive concept, the embodiment of the present invention also provides a kind of multi-junction solar electricity for improving anti-radiation performance
Pond production method forms the multi-junction solar electricity that anti-radiation performance is improved described in any of the above one embodiment for making
Pond, the production method include:
Substrate is provided；
Bottom battery is formed in the side of the substrate；
The sub- battery of InGaAs is formed away from the side of the substrate in the bottom battery；
The sub- battery of GaInP is formed away from the side of the substrate in the sub- battery of the InGaAs；
It grows to form light guide contact layer away from the side of the sub- battery of the InGaAs in the sub- battery of the GaInP, the light
The material for connecting contact layer is GaInP or AlGaInP；
Transparent electrode is formed away from the side of the sub- battery of the GaInP in the light guide contact layer；
Wherein, the transparent electrode is grid line structure, and the light guide contact layer and the transparent electrode are in the top electricity
Projection overlapping on pond.
Not limiting multijunction solar cell in the present embodiment is three knots or four knots, if four-junction solar cell,
It can also include the structure for forming other middle subcells, not elaborate in the present embodiment to this.
Light guide contact layer is located at the lower section of transparent electrode in the present embodiment, and and projection weight of the transparent electrode on the battery of top
It is folded, it include the processing step performed etching to light guide contact layer in the present invention, it should be noted that wet process can be used therefore
Etching technics forms the light guide contact layer of grid line structure, and the light guide contact of grid line structure can also be formed using dry etch process
Layer, this is not construed as limiting in the present embodiment.It should be noted that being connect in the light guide for forming grid line structure using wet-etching technology
It further include etch stop layers in the present embodiment in order to control the precision of wet etching when contact layer, the etch stop layers position
In the light guide contact layer towards the surface of the bottom battery.In this way, in the production process, wet etching light guide contact layer is formed
When grid line structure, it can stop on etch stop layers, to control the etching precision of wet etching.
To avoid etch stop layers from absorbing spectrum, in the light guide contact thickness for the grid line structure that completes, then select
With selective etch technique, the etch stop layers outside grid line structure are removed, so that etch stop layers equally only retain grid line knot
The corresponding part of structure.
It should be noted that all the embodiments in this specification are described in a progressive manner, each embodiment weight
Point explanation is the difference from other embodiments, and the same or similar parts between the embodiments can be referred to each other.
It should also be noted that, herein, relational terms such as first and second and the like are used merely to one
Entity or operation are distinguished with another entity or operation, without necessarily requiring or implying between these entities or operation
There are any actual relationship or orders.Moreover, the terms "include", "comprise" or its any other variant are intended to contain
Lid non-exclusive inclusion, so that article or equipment including a series of elements not only include those elements, but also
It including other elements that are not explicitly listed, or further include for this article or the intrinsic element of equipment.Do not having
In the case where more limitations, the element that is limited by sentence "including a ...", it is not excluded that in the article including above-mentioned element
Or there is also other identical elements in equipment.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest scope of cause.
Claims (12)
1. a kind of multijunction solar cell for improving anti-radiation performance characterized by comprising
At least three knot batteries, include at least in the three knots battery the battery of InGaAs and the sub- battery of GaInP or
The sub- battery of AlGaInP, the sub- battery of the GaInP or the sub- battery of AlGaInP are the top battery of the multijunction solar cell, described
The sub- battery of InGaAs is the intermediate cell between the bottom battery and the top battery of the multijunction solar cell；
Deviate from the light guide contact layer of bottom battery side positioned at the top battery；
Positioned at the light guide contact layer away from the transparent electrode of the top battery side, the transparent electrode is grid line structure, and
The projection overlapping of the light guide contact layer and the transparent electrode on the top battery；
Wherein, the material of the light guide contact layer is GaInP or AlGaInP.
2. the multijunction solar cell according to claim 1 for improving anti-radiation performance, which is characterized in that further include:
Ohmic contact layer, the ohmic contact layer are located at the light guide contact layer towards the surface of the transparent electrode；
Wherein, the material of the ohmic contact layer is AuGeNi.
3. the multijunction solar cell according to claim 2 for improving anti-radiation performance, which is characterized in that described ohm connects
The thickness range of contact layer is 2nm-10nm, including endpoint value.
4. the multijunction solar cell according to claim 1 for improving anti-radiation performance, which is characterized in that the light guide connects
The thickness range of contact layer is 0.2 μm -1 μm, including endpoint value；The light guide contact layer is n-contact layer, the doping of p-type impurity
Concentration range is 1 × 1018/cm3~1 × 1019/cm3, including endpoint value.
5. the multijunction solar cell according to claim 1 for improving anti-radiation performance, which is characterized in that the transparent electricity
Extremely ITO electrode, IZO electrode, IGZO electrode, AZO electrode or Graphene electrodes.
6. the multijunction solar cell according to claim 1 for improving anti-radiation performance, which is characterized in that further include: it is rotten
Lose cutoff layer；
The etch stop layers are located at the light guide contact layer towards the surface of the bottom battery.
7. the multijunction solar cell according to claim 6 for improving anti-radiation performance, which is characterized in that the corrosion is cut
Only layer is N-shaped AlGaAs material.
8. the multijunction solar cell according to claim 7 for improving anti-radiation performance, which is characterized in that the corrosion is cut
Only the thickness range of layer is 1nm-20nm, including endpoint value；Wherein, Al component is greater than 0.35, and less than 1.
9. the multijunction solar cell according to any one of claims 1 to 8 for improving anti-radiation performance, which is characterized in that
The multijunction solar cell is three-joint solar cell, and the three-joint solar cell includes:
Battery and top battery along the bottom Ge battery that the direction of growth is set gradually, InGaAs, the top battery are the top GaInP battery
Or AlGaInP pushes up battery.
10. the multijunction solar cell according to any one of claims 1 to 8 for improving anti-radiation performance, feature exist
In the multijunction solar cell is four-junction solar cell, and the four-junction solar cell includes:
The sub- battery of Ge first that is set gradually along the direction of growth, the sub- battery of InGaAs second, the sub- battery of AlInGaAs third and
The sub- battery of GaInP the 4th or the sub- battery of AlGaInP the 4th.
11. a kind of multijunction solar cell production method for improving anti-radiation performance, which is characterized in that form right for making
It is required that improving the multijunction solar cell of anti-radiation performance described in 1-10 any one, the production method includes:
Substrate is provided；
Bottom battery is formed in the side of the substrate；
The sub- battery of InGaAs is formed away from the side of the substrate in the bottom battery；
The sub- battery of GaInP is formed away from the side of the substrate in the sub- battery of the InGaAs；
It grows to form light guide contact layer away from the side of the sub- battery of the InGaAs in the sub- battery of the GaInP, the light guide connects
The material of contact layer is GaInP or AlGaInP；
Transparent electrode is formed away from the side of the sub- battery of the GaInP in the light guide contact layer；
Wherein, the transparent electrode is grid line structure, and the light guide contact layer and the transparent electrode are on the top battery
Projection overlapping.
12. the multijunction solar cell production method according to claim 11 for improving anti-radiation performance, which is characterized in that
Before the side that the sub- battery of the GaInP deviates from the sub- battery of the InGaAs grows and to form light guide contact layer, can also include:
Etch stop layers are formed away from the surface of the sub- battery of the InGaAs in the sub- battery of the GaInP；
The light guide contact layer of flood is formed away from the surface of the sub- battery of the GaInP in the etch stop layers；
The part light guide contact layer and the etch stop layers are removed using wet-etching technology, to form the light of grid line structure
Connect contact layer.
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