CN104037251A - GaAs laser photovoltaic cell with output voltage being 6V and making method thereof - Google Patents
GaAs laser photovoltaic cell with output voltage being 6V and making method thereof Download PDFInfo
- Publication number
- CN104037251A CN104037251A CN201310071968.9A CN201310071968A CN104037251A CN 104037251 A CN104037251 A CN 104037251A CN 201310071968 A CN201310071968 A CN 201310071968A CN 104037251 A CN104037251 A CN 104037251A
- Authority
- CN
- China
- Prior art keywords
- type
- layer
- photovoltaic cell
- battery
- battery unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims description 18
- 238000002955 isolation Methods 0.000 claims description 22
- 230000004888 barrier function Effects 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 8
- 239000011449 brick Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 230000031700 light absorption Effects 0.000 abstract 1
- 230000006872 improvement Effects 0.000 description 7
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000013307 optical fiber Substances 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical group [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a GaAs laser photovoltaic cell with the output voltage being 6V. The laser photovoltaic cell comprises isolating grooves which divide the laser photovoltaic cell into six cell units. The six cell units include a first cell unit and five second cell units arranged around the first cell unit, and the cell units are connected in series. According to the laser photovoltaic cell, a circular cell accounting for one sixth of the total area of the laser photovoltaic cell is arranged in the middle of the laser photovoltaic cell, the area of isolating grooves in the middle of commonly-used laser cells is reduced, absorption of light with high energy density in the center of light spots can be greatly increased, and the photoelectric conversion efficiency of the cell is improved. The GaAs laser photovoltaic cell can be widely used as an efficient laser photovoltaic cell.
Description
Technical field
The present invention relates to a kind of laser photovoltaic cell, relating in particular to a kind of output voltage is GaAs laser photovoltaic cell of 6V and preparation method thereof.
Background technology
Laser energy supplying system is the energy delivery system of an innovation, relies on this system, and the light that LASER Light Source is sent is transported on laser photovoltaic cell by optical fiber, and stable power supply output can be provided.Be converted into electricity by optical fiber transmission leaded light and have more advantage than traditional metal wire and coaxial cable power transmission technology, can be applied in and need to eliminate electromagnetic interference and maybe need, by the situation of electronic device and surrounding environment isolation, have important application in directions such as radio communication, industrial sensor, national defence, aviation, medicine, the energy.Operation principle and the solar cell of laser photovoltaic cell are similar, just can obtain higher conversion efficiency, and larger output voltage can transmit more energy, and light source adopts the laser of the 790 nm-850 nm wavelength that are applicable to Optical Fiber Transmission.
The laser photovoltaic cell of conventional 6V Voltage-output is generally six sub-batteries that the circular batteries average mark that meets laser facula size are made into formed objects same shape, as Fig. 1, like this intersection isolation channel place, center at sub-battery is produced to larger groove, will greatly reduce the area of active area, battery center.The optical energy density penetrating from optical fiber is in addition Gaussian Profile or close to Gaussian Profile, causes the energy of the light that incides battery center the strongest, so conventional laser battery structure can reduce the photoelectric conversion efficiency of battery in Fig. 1.
Summary of the invention
The GaAs laser photovoltaic cell structure that object of the present invention provides a kind of output voltage to be about 6 V, it can effectively increase battery center active region area, thereby improves the conversion efficiency of laser photovoltaic cell.
For achieving the above object, the invention provides following technical scheme:
The application discloses the GaAs laser photovoltaic cell that a kind of output voltage is 6V, described laser photovoltaic power brick is drawn together isolation channel, described photovoltaic cell is separated into 6 battery units by this isolation channel, comprise 1 the first battery unit, and around 5 the second battery units being located at described the first battery unit surrounding, between battery unit, be connected in series.
As a further improvement on the present invention, described photovoltaic cell comprises the N-type conductive layer, P/N junction battery, P type Window layer and the P type contact layer that are formed at successively on SI-substrate, and described isolation channel runs through respectively described P type contact layer, P type Window layer, P/N junction battery and N-type conductive layer.
Preferably, described photovoltaic cell also comprises the barrier layer between described N-type conductive layer and P/N junction battery.
Preferably, the cross section of described the first battery unit is circular, and 5 described the second battery unit sectional areas are identical, and its cross section is arc, and 5 described the second battery units form a cylindrical structure around described the first battery unit.
As a further improvement on the present invention, for uniform circular laser facula, the light-receiving area of the first described battery unit and the second battery unit of each equates.
As a further improvement on the present invention, for centrosymmetric non-homogeneous circular laser facula, 5 described the second battery units have identical light-receiving area, and the photoelectric current of the first described battery unit and the second battery unit of each equates.
Correspondingly, disclosed herein as well is a kind of output voltage is the manufacture method of the GaAs laser photovoltaic cell of 6V, comprising:
(1) the N-type conductive layer of growing on SI-substrate;
(2) barrier layer of growing on above-mentioned N-type conductive layer;
(3) grow successively on above-mentioned barrier layer N-type absorbed layer and P type absorbed layer forms P/N junction battery;
(4) growing P-type Window layer on above-mentioned P/N junction battery;
(5) in above-mentioned P type Window layer, growing P-type contact layer is used as ohmic contact;
(6) successively etching P type contact layer, P type Window layer, P/N junction battery, barrier layer, N-type conductive layer until expose SI-substrate or partial etching SI-substrate to form isolation channel;
(7) prepare positive electrode, negative electrode, antireflection layer and contact conductor, obtain target product.
As a further improvement on the present invention, described conductive layer is N-type doping content 1 × 10
18cm
-3above GaAs conductive layer; Described barrier layer is doping content 1 × 10
18cm
-3above N-type AlGaAs or AlGaInP) barrier layer; Described P type Window layer is that doping content is 1 × 10
18cm
-3above Window layer; Described P type contact layer is that doping content is 2 × 10
18cm
-3above GaAs contact layer.
As a further improvement on the present invention, in described step (7), etching P type contact layer, P type Window layer, P/N junction battery, N-type barrier layer successively, until expose N-type conductive layer to form negative electrode window, then on N-type conductive layer, prepare negative electrode through this negative electrode window again, on P type contact layer, prepare positive electrode.
Disclosed herein as well is a kind of GaAs laser photovoltaic cell, described laser photovoltaic power brick is drawn together isolation channel, described photovoltaic cell is separated into multiple battery units by this isolation channel, comprise 1 the first battery unit, and around multiple the second battery units of being located at described the first battery unit surrounding, between battery unit, be connected in series.
Compared with prior art, the invention has the advantages that:
1. the present invention designs the GaAs laser photovoltaic cell structure that a kind of output voltage is about 6 V and can avoid battery center to produce larger groove;
2. the present invention designs the GaAs laser photovoltaic cell structure that a kind of output voltage is about 6 V and can absorb more efficiently incident light.
Brief description of the drawings
In order to be illustrated more clearly in the embodiment of the present application or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, the accompanying drawing the following describes is only some embodiment that record in the application, for those of ordinary skill in the art, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Figure 1 shows that the structural representation of the laser photovoltaic cell that in prior art, output voltage is 6V;
Figure 2 shows that the structural representation of the laser photovoltaic cell that in the specific embodiment of the invention, output voltage is 6V;
Figure 3 shows that in Fig. 2 along diametric cutaway view.
Embodiment
The embodiment of the present application discloses the GaAs laser photovoltaic cell that a kind of output voltage is 6V, described laser photovoltaic power brick is drawn together isolation channel, described photovoltaic cell is separated into 6 battery units by this isolation channel, comprise 1 the first battery unit, and around 5 the second battery units being located at described the first battery unit surrounding, between battery unit, be connected in series.
Correspondingly, the embodiment of the present application also discloses the manufacture method that a kind of output voltage is the GaAs laser photovoltaic cell of 6V, comprising:
(1) the N-type conductive layer of growing on SI-substrate;
(2) barrier layer of growing on above-mentioned N-type conductive layer;
(3) grow successively on above-mentioned barrier layer N-type absorbed layer and P type absorbed layer forms P/N junction battery;
(4) growing P-type Window layer on above-mentioned P/N junction battery;
(5) in above-mentioned P type Window layer, growing P-type contact layer is used as ohmic contact;
(6) successively etching P type contact layer, P type Window layer, P/N junction battery, barrier layer, N-type conductive layer until expose SI-substrate or partial etching SI-substrate to form isolation channel;
(7) prepare positive electrode, negative electrode, antireflection layer and contact conductor, obtain target product.
The embodiment of the present application also discloses a kind of GaAs laser photovoltaic cell, described laser photovoltaic power brick is drawn together isolation channel, described photovoltaic cell is separated into multiple battery units by this isolation channel, comprise 1 the first battery unit, and around multiple the second battery units of being located at described the first battery unit surrounding, between battery unit, be connected in series.The quantity of the second battery unit is more than or equal to 2, and in the time being 2, output voltage is 3V.
In above-mentioned laser photovoltaic cell, preferred, the material of described SI-substrate, N-type conductive layer and P type contact layer is GaAs, and described P/N junction battery is GaAs battery, and the material of described P type Window layer is Al
xga
1-xas (1 > x>=0.2) or Ga
0.51in
0.49p.Wherein, conductive layer is N-type doping content 1 × 10
18cm
-3above GaAs conductive layer; Described barrier layer is doping content 1 × 10
18cm
-3above N-type AlGaAs or AlGaInP) barrier layer; Described P type Window layer is that doping content is 1 × 10
18cm
-3above Window layer; Described P type contact layer is that doping content is 2 × 10
18cm
-3above GaAs contact layer.
Preferably, positive electrode, negative electrode deposit respectively one or more layers metal annealing by electron beam evaporation, thermal evaporation or magnetron sputtering and form ohmic contact and make on P type contact layer and N-type conductive layer.Positive and negative electrode is realized the series connection of each element cell in photovoltaic cell by the mode of metal pressure-welding or evaporation metal.
Preferably, antireflection layer is ZnSe/MgF or the TiO preparing by chemical vapor deposition techniques or coating machine
2/ SiO
2antireflective coating.
As the available execution mode of one, each layer in this photovoltaic cell is to adopt MOCVD or the growth of MBE method to form, and wherein the N-type foreign atom of MOCVD is Si, Se, S or Te, and P type foreign atom is Zn, Mg or C; The N-type foreign atom of MBE is Si, Se, S or Te, and P type foreign atom is Be, Mg or C.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is described in detail, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiment.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art obtain under the prerequisite of not making creative work, belongs to the scope of protection of the invention.
The GaAs laser photovoltaic cell structure that a kind of output voltage in the present embodiment is about 6 V meets following condition:
1. between 5 the second sub-batteries 10 and the first sub-battery 20, apply dry method or wet etching isolation channel, and fill;
2. the photoelectric current of 5 the second sub-batteries 10 and the first sub-battery 20 equates;
3. on each the second sub-battery 10 and the first sub-battery 20, pass through dry method or wet etching negative electrode window of the same area;
4. for uniform circular laser facula, the light-receiving area on each the second sub-battery 10 and the first sub-battery 20 equates;
5. for centrosymmetric non-homogeneous circular laser facula, the light-receiving area of each the second sub-battery 10 is equal, and the light-receiving area that simultaneously designs the second sub-battery 10 equates with the electric current that the sensitive surface ratio of the first sub-battery 20 produces each sub-battery;
6. positive and negative electrode is realized the series connection of each element cell in battery by the mode of metal pressure-welding or evaporation metal, forms the GaAs laser photovoltaic battery device that a complete output voltage is about 6 V.
Consult Fig. 2 and Fig. 3, the manufacture craft that this kind of output voltage is about the chip of the GaAs laser photovoltaic cell structure of 6 V comprises the following steps:
1, form photovoltaic cell matrix by MOCVD or MBE growing epitaxial structure on Semi-insulating GaAs substrate 01, this epitaxial structure comprises that the height of the lower conductiving layer N-type of battery mixes GaAs layer 02, N-type AlGaAs or AlGaInP) barrier layer 03, the PN junction 04 of GaAs, P type Ga
0.51in
0.49p Window layer 05, P type GaAs contact layer 06;
2, in conjunction with shown in Fig. 3, on photovoltaic cell matrix, pass through dry method or wet etching to Semi-insulating GaAs substrate, then isolate by materials such as filler or silica electric insulations, form isolation channel 30;
3, be etched to successively N-type GaAs conductive layer by dry method or wet etching, form negative electrode window (not shown);
4, by the modes such as electron beam evaporation, thermal evaporation or magnetron sputtering on P type GaAs contact layer 06, prepare the positive electrode of Pd/Zn/Pd/Au=5/10/20/200 nm metal material respectively, on conductive layer 02, prepare AuGe/Ni/Au=35/10/100 nm metal material negative electrode form ohmic contact, the column electrode Au that goes forward side by side thickeies to 2 μ m;
5, by selective corrosion, the contact layer below electrode is removed, application coating machine is prepared TiO
2/ SiO
2antireflection layer;
6, prepare contact conductor, realize battery series connection;
7, after scribing, form single group laser photovoltaic cell chips.
Laser battery of the present invention comprises 5 arc batteries and a circular batteries, the photoelectric current of described five arc batteries and circular batteries equates, five arc batteries form a unitary circular structure around circular batteries, and six sub-batteries realize by being connected in series the output voltage that is about 6 V.The present invention is provided with a circular batteries that accounts for the battery gross area 1/6th in the middle of battery, reduces the area of conventional laser battery intermediate isolating groove, can greatly increase the absorption to hot spot middle position high-energy-density light, has improved the photoelectric conversion efficiency of battery.
In other embodiments, in laser photovoltaic cell, PN junction battery also can oppositely arrange; Isolation channel also can sub-battery be unequal cuts apart by 5 second.
It should be noted that, in this article, relational terms such as the first and second grades is only used for an entity or operation to separate with another entity or operating space, and not necessarily requires or imply and between these entities or operation, have the relation of any this reality or sequentially.And, term " comprises ", " comprising " or its any other variant are intended to contain comprising of nonexcludability, thereby the process, method, article or the equipment that make to comprise a series of key elements not only comprise those key elements, but also comprise other key elements of clearly not listing, or be also included as the intrinsic key element of this process, method, article or equipment.The in the situation that of more restrictions not, the key element being limited by statement " comprising ... ", and be not precluded within process, method, article or the equipment that comprises described key element and also have other identical element.
The above is only the application's embodiment; it should be pointed out that for those skilled in the art, do not departing under the prerequisite of the application's principle; can also make some improvements and modifications, these improvements and modifications also should be considered as the application's protection range.
Claims (10)
1. the GaAs laser photovoltaic cell that output voltage is 6V, it is characterized in that: described laser photovoltaic power brick is drawn together isolation channel, described photovoltaic cell is separated into 6 battery units by this isolation channel, comprise 1 the first battery unit, and around 5 the second battery units being located at described the first battery unit surrounding, between battery unit, be connected in series.
2. the GaAs laser photovoltaic cell that output voltage according to claim 1 is 6V, it is characterized in that: described photovoltaic cell comprises the N-type conductive layer, P/N junction battery, P type Window layer and the P type contact layer that are formed at successively on SI-substrate, and described isolation channel runs through respectively described P type contact layer, P type Window layer, P/N junction battery and N-type conductive layer.
3. the GaAs laser photovoltaic cell that output voltage according to claim 2 is 6V, is characterized in that: described photovoltaic cell also comprises the barrier layer between described N-type conductive layer and P/N junction battery.
4. the GaAs laser photovoltaic cell that output voltage according to claim 1 is 6V, it is characterized in that: the cross section of described the first battery unit is for circular, 5 described the second battery unit sectional areas are identical, and its cross section is arc, 5 described the second battery units form a cylindrical structure around described the first battery unit.
5. the GaAs laser photovoltaic cell that output voltage according to claim 1 is 6V, is characterized in that: for uniform circular laser facula, the light-receiving area of the first described battery unit and the second battery unit of each equates.
6. the GaAs laser photovoltaic cell that output voltage according to claim 1 is 6V, it is characterized in that: for centrosymmetric non-homogeneous circular laser facula, 5 described the second battery units have identical light-receiving area, and the photoelectric current of the first described battery unit and the second battery unit of each equates.
7. the manufacture method of the GaAs laser photovoltaic cell that the arbitrary described output voltage of claim 1 to 6 is 6V, is characterized in that, comprising:
(1) the N-type conductive layer of growing on SI-substrate;
(2) barrier layer of growing on above-mentioned N-type conductive layer;
(3) grow successively on above-mentioned barrier layer N-type absorbed layer and P type absorbed layer forms P/N junction battery;
(4) growing P-type Window layer on above-mentioned P/N junction battery;
(5) in above-mentioned P type Window layer, growing P-type contact layer is used as ohmic contact;
(6) successively etching P type contact layer, P type Window layer, P/N junction battery, barrier layer, N-type conductive layer until expose SI-substrate or partial etching SI-substrate to form isolation channel;
(7) prepare positive electrode, negative electrode, antireflection layer and contact conductor, obtain target product.
8. the manufacture method of laser photovoltaic cell according to claim 7, is characterized in that: described conductive layer is N-type doping content 1 × 10
18cm
-3above GaAs conductive layer; Described barrier layer is doping content 1 × 10
18cm
-3above N-type AlGaAs or AlGaInP barrier layer; Described P type Window layer is that doping content is 1 × 10
18cm
-3above Window layer; Described P type contact layer is that doping content is 2 × 10
18cm
-3above GaAs contact layer.
9. the manufacture method of laser photovoltaic cell according to claim 7, it is characterized in that: in described step (7), etching P type contact layer, P type Window layer, P/N junction battery, N-type barrier layer successively, until expose N-type conductive layer to form negative electrode window, then on N-type conductive layer, prepare negative electrode through this negative electrode window again, on P type contact layer, prepare positive electrode.
10. a GaAs laser photovoltaic cell, it is characterized in that: described laser photovoltaic power brick is drawn together isolation channel, described photovoltaic cell is separated into multiple battery units by this isolation channel, comprise 1 the first battery unit, and around multiple the second battery units of being located at described the first battery unit surrounding, between battery unit, be connected in series.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310071968.9A CN104037251A (en) | 2013-03-07 | 2013-03-07 | GaAs laser photovoltaic cell with output voltage being 6V and making method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310071968.9A CN104037251A (en) | 2013-03-07 | 2013-03-07 | GaAs laser photovoltaic cell with output voltage being 6V and making method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104037251A true CN104037251A (en) | 2014-09-10 |
Family
ID=51467951
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310071968.9A Pending CN104037251A (en) | 2013-03-07 | 2013-03-07 | GaAs laser photovoltaic cell with output voltage being 6V and making method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104037251A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105762211A (en) * | 2015-12-31 | 2016-07-13 | 天津蓝天太阳科技有限公司 | Photoelectric energy conversion module |
| CN108879924A (en) * | 2018-06-12 | 2018-11-23 | 中国电子科技集团公司第十八研究所 | Laser energy transmission receiver |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5342451A (en) * | 1990-06-07 | 1994-08-30 | Varian Associates, Inc. | Semiconductor optical power receiver |
| US20060048811A1 (en) * | 2004-09-09 | 2006-03-09 | Krut Dimitri D | Multijunction laser power converter |
| CN101431084A (en) * | 2006-12-20 | 2009-05-13 | Jds尤尼弗思公司 | Multi-segment photovoltaic power converter with a center portion |
| CN102184999A (en) * | 2011-04-02 | 2011-09-14 | 中国科学院苏州纳米技术与纳米仿生研究所 | NPN-structure-based laser photovoltaic cell and preparation process thereof |
-
2013
- 2013-03-07 CN CN201310071968.9A patent/CN104037251A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5342451A (en) * | 1990-06-07 | 1994-08-30 | Varian Associates, Inc. | Semiconductor optical power receiver |
| US20060048811A1 (en) * | 2004-09-09 | 2006-03-09 | Krut Dimitri D | Multijunction laser power converter |
| CN101431084A (en) * | 2006-12-20 | 2009-05-13 | Jds尤尼弗思公司 | Multi-segment photovoltaic power converter with a center portion |
| CN102184999A (en) * | 2011-04-02 | 2011-09-14 | 中国科学院苏州纳米技术与纳米仿生研究所 | NPN-structure-based laser photovoltaic cell and preparation process thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105762211A (en) * | 2015-12-31 | 2016-07-13 | 天津蓝天太阳科技有限公司 | Photoelectric energy conversion module |
| CN105762211B (en) * | 2015-12-31 | 2017-08-22 | 天津蓝天太阳科技有限公司 | A kind of photoelectric energy conversion module |
| CN108879924A (en) * | 2018-06-12 | 2018-11-23 | 中国电子科技集团公司第十八研究所 | Laser energy transmission receiver |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102184999B (en) | NPN-structure-based laser photovoltaic cell and preparation process thereof | |
| JP5302414B2 (en) | Solar cell and manufacturing method thereof | |
| US8507787B2 (en) | Solar cell having a discontinuously graded doping concentration | |
| KR101579318B1 (en) | Solar cell and method for manufacturing the same | |
| US20100218818A1 (en) | Solar cell and method of manufacturing the same | |
| US11616160B2 (en) | Tandem solar cell | |
| CN102651416A (en) | Three-knot laminated GaAs laser photovoltaic battery and preparation method thereof | |
| US9698300B2 (en) | Method for manufacturing solar cell | |
| CN102651420A (en) | Double-junction GaAs lamination laser photovoltaic cell and fabrication method thereof | |
| US20130160840A1 (en) | Solar cell | |
| CN103247635B (en) | Laser photovoltaic cell of positive-negative-positive structure and preparation method thereof | |
| CN104009046B (en) | Laser photovoltaic cell of inverted structure and preparation method thereof | |
| CN111048602B (en) | Laser charging efficient solar cell based on interconnection technology and preparation method thereof | |
| CN105514207A (en) | Method for preparing integrated bypass diode of multi-junction solar cell | |
| CN104037251A (en) | GaAs laser photovoltaic cell with output voltage being 6V and making method thereof | |
| CN104037178A (en) | GaAs laser photovoltaic cell with output voltage being 5V and making method thereof | |
| CN103123923B (en) | A kind of laser photovoltaic cell and preparation method thereof | |
| CN108735848B (en) | Multi-junction laminated laser photovoltaic cell and manufacturing method thereof | |
| CN103117286B (en) | Laser photovoltaic cell and preparation method thereof | |
| CN104037252A (en) | GaAs laser photovoltaic cell with output voltage being 7V and making method thereof | |
| CN104576772B (en) | laser photovoltaic cell and manufacturing method thereof | |
| CN203071094U (en) | Laser optical fiber power supply cell and laser optical fiber power supply system | |
| CN103268893B (en) | Laser photovoltaic cell of NPN structure and preparation method thereof | |
| CN106611805A (en) | Photovoltaic device and preparation method thereof, multi-junction GaAs laminated laser photovoltaic cell | |
| CN115172500B (en) | Laser battery assembly |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140910 |
|
| RJ01 | Rejection of invention patent application after publication |