CN115172500B - Laser battery assembly - Google Patents
Laser battery assembly Download PDFInfo
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- CN115172500B CN115172500B CN202210817562.XA CN202210817562A CN115172500B CN 115172500 B CN115172500 B CN 115172500B CN 202210817562 A CN202210817562 A CN 202210817562A CN 115172500 B CN115172500 B CN 115172500B
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- 238000002955 isolation Methods 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 18
- 230000005641 tunneling Effects 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000004642 Polyimide Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 229920001721 polyimide Polymers 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 abstract description 12
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- Condensed Matter Physics & Semiconductors (AREA)
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- General Physics & Mathematics (AREA)
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Abstract
The application discloses a laser battery component, which belongs to the technical field of photovoltaic cells and comprises the following components: the device comprises an insulating substrate, M laser battery units, an isolation groove, an insulating layer and a bridging electrode. The laser battery unit comprises a lower electrode, a battery epitaxial active layer, an upper electrode and an antireflection structure. The isolation groove separates the laser battery units, the insulating layer insulates and passivates the side walls of the laser battery units, the bridging electrode connects the upper electrode and the lower electrode of the adjacent laser battery units, the adjacent laser battery units are electrically connected, and the M laser battery units are sequentially connected in series. The laser battery assembly with the structure can give consideration to battery efficiency and applicability in long-distance high-power laser wireless energy transmission application.
Description
Technical Field
The application belongs to the technical field of photovoltaic cells, and particularly relates to a laser battery assembly.
Background
The laser wireless energy transmission has the advantages of high transmission energy density, high transmission and conversion efficiency, high comprehensive energy utilization rate, small system volume, small energy supply scene limitation and the like, and is very suitable for spatial environment application. The solar battery array of the high-orbit space vehicle realizes that solar energy is converted into electric energy, the electric energy is converted into laser, and the laser is used for supplying energy to other space vehicles or unmanned aerial vehicles in the nearby space. The laser battery is the most important component of the laser receiving end of the wireless energy transmission system. The photoelectric conversion efficiency of the laser battery assembly directly determines the overall transmission efficiency of the wireless energy transmission system.
The wireless energy transmission of long-distance high-power laser is to guarantee the higher photoelectric conversion efficiency of laser battery assembly in practical application, has put forward more harsh requirement to laser battery assembly, includes: large size, high voltage and strong adaptability to the change of laser light intensity and incidence angle. For a single-junction III-V semiconductor laser battery, under high-power laser irradiation, a large working current is generated, and an excessive current causes higher energy loss in a circuit, so that the photoelectric conversion efficiency of a laser battery component is reduced. Typically, a method of serially connecting sub-cells is adopted to increase the voltage of the cells, thereby reducing the output current of the cells.
The series structure of the traditional laser battery sub-battery has two transverse and longitudinal structures. But there are dividing regions between the sub-cells of the lateral series structure, which reduces the effective power generation area of the cells. The longitudinal series structure can only optimize the absorption thickness of each junction of the sub-cells for a single laser intensity. Both the intensity and the angle of incidence change affect its efficiency, and the greater the number of longitudinal knots, the greater the effect. Therefore, the laser battery with the traditional structure cannot meet the requirement of long-distance high-power laser wireless energy transmission.
Disclosure of Invention
The application provides a laser battery assembly, which can simultaneously meet three requirements of large size, high voltage and strong adaptability to laser light intensity and incidence angle change of the laser battery assembly in long-distance high-power laser wireless energy transmission, and has the advantages of larger effective light receiving area of a battery, smaller series resistance of the battery and higher photoelectric conversion efficiency.
An object of the present application is to provide a laser battery assembly including: insulating substrate, M laser battery unit, isolation groove, insulating layer, bridging electrode, wherein: m is a natural number greater than 0.
The laser battery unit comprises a lower electrode, a battery epitaxial active layer, an upper electrode and an antireflection structure.
The isolation groove separates adjacent laser battery cells, the side wall of each laser battery cell is insulated and passivated by the insulating layer, the upper electrode and the lower electrode of each adjacent laser battery cell are connected by the bridging electrode, the adjacent laser battery cells are electrically connected, and the M laser battery cells are sequentially connected in series.
Preferably, the material of the insulating substrate is one of silicon oxide, polyimide and quartz.
Preferably, the areas of the M laser battery cells are the same.
As an optional structure, the battery epitaxial active layer is a GaAs-based battery active layer, and includes from bottom to top: a p-type electrode contact layer, a first junction Ga (In) As subcell, a tunneling junction, a second junction Ga (In) As subcell, and an n-type electrode contact layer.
Preferably, the first junction Ga (In) As subcell includes from bottom to top: gaInP back field, ga x1 In 1-x1 As base region, ga x1 In 1-x1 An As emission region and a GaInP window layer, wherein x1 is more than or equal to 0.8 and less than or equal to 1.
Preferably, the second junction Ga (In) As subcell includes from bottom to top: gaInP back field, ga x2 In 1-x2 As base region, ga x2 In 1-x2 An As emission region and a GaInP window layer, wherein x2 is more than or equal to 0.8 and less than or equal to 1.
Preferably, the p-type electrode contact layer is a p-type GaAs layer with a doping concentration of 1×10 18 ～1×10 19 cm -3 The thickness is 100-200 nm.
Preferably, the GaInP back surface field is doped with p-type material with doping concentration of 1×10 17 ～1×10 18 cm -3 The thickness is 50-400 nm.
Preferably, the GaInP window layer is doped n-type with doping concentration of 1×10 17 ～1×10 18 cm -3 The thickness is 50-400 nm.
Preferably, the Ga x1 In 1-x1 The As base region is doped with p type, and the doping concentration is 1 multiplied by 10 16 ～1×10 18 cm -3 The thickness is 1000-5000 nm.
Preferably, the Ga x1 In 1-x1 The As emitting region is n-type doped with doping concentration of 1×10 17 ～1×10 19 cm -3 The thickness is 100-500 nm.
Preferably, the Ga x2 In 1-x2 The As base region is doped with p type, and the doping concentration is 1 multiplied by 10 16 ～1×10 18 cm -3 The thickness is 1000-5000 nm.
Preferably, the Ga x2 In 1-x2 The As emitting region is n-type doped with doping concentration of 1×10 17 ～1×10 19 cm -3 The thickness is 100-500 nm.
Preferably, the tunneling junction includes: an n-type GaAs layer and a p-type GaAs layer with a doping concentration of 1×10 19 ～1×10 21 cm -3 The thickness is 10-100 nm.
Preferably, the n-type electrode contact layer is an n-type GaAs layer with a doping concentration of 1×10 18 ～1×10 19 cm -3 The thickness is 100-200 nm.
As another optional structure, the battery epitaxial active layer is an InP-based battery active layer, and includes from bottom to top: the semiconductor device comprises a p-type electrode contact layer, a first junction GaInAsP sub-cell, a tunneling junction, a second junction GaInAsP sub-cell and an n-type electrode contact layer.
Preferably, the first junction GaInAsP subcell includes from bottom to top: inP back surface field, ga y1 In 1-y1 As z1 P 1-z1 Base region, ga y1 In 1-y1 As z1 P 1-z1 An emission region and an InP window layer, wherein y1 is more than or equal to 0 and less than or equal to 0.5, and z1 is more than or equal to 0 and less than or equal to 1.
Preferably, the second junction GaInAsP subcell includes from bottom to top: inP back surface field, ga y2 In 1-y2 As z2 P 1-z2 Base region, ga y2 In 1-y2 As z2 P 1-z2 An emission region and an InP window layer, wherein y2 is more than or equal to 0 and less than or equal to 0.5, and z2 is more than or equal to 0 and less than or equal to 1.
Preferably, the p-type electrode contact layer is a p-type GaInAs layer with a doping concentration of 1×10 18 ～1×10 19 cm -3 The thickness is 100-200 nm.
Preferably, the InP back surface field is doped with p-type dopant with a doping concentration of 1×10 17 ～1×10 18 cm -3 The thickness is 50-400 nm.
Preferably, the InP window layer is doped n-type with doping concentration of 1×10 17 ～1×10 18 cm -3 The thickness is 50-400 nm.
Preferably, the Ga y1 In 1-y1 As z1 P 1-z1 The base region is doped with p-type material with doping concentration of 1×10 16 ～1×10 18 cm -3 The thickness is 1000-5000 nm.
Preferably, the Ga y1 In 1-y1 As z1 P 1-z1 The emitter region is doped n-type with doping concentration of 1×10 17 ～1×10 19 cm -3 The thickness is 100-500 nm.
Preferably, the Ga y2 In 1-y2 As z2 P 1-z2 The base region is doped with p-type material with doping concentration of 1×10 16 ～1×10 18 cm -3 The thickness is 1000-5000 nm.
Preferably, the Ga y2 In 1-y2 As z2 P 1-z2 The emitter region is doped n-type with doping concentration of 1×10 17 ～1×10 19 cm -3 The thickness is 100-500 nm.
Preferably, the tunneling junction includes: an n-type InP layer and a p-type InP layer with doping concentration of 1×10 19 ～1×10 21 cm -3 The thickness is 10-100 nm.
Preferably, the n-type electrode contact layer is an n-type GaInAs layer with a doping concentration of 1×10 18 ～1×10 19 cm -3 The thickness is 100-200 nm.
Preferably, the upper electrode and the bridging electrode are made of Au/Ge/Ag, and the thickness is 2-5 mu m; the lower electrode is made of Ti/Pd/Au/Ge/Au, and the thickness is 4-8 mu m.
Preferably, the insulating layer is polyimide glue.
Preferably, the anti-reflection structure comprises from bottom to top: titanium oxide/silicon oxide antireflection film and nano array light trapping structure.
The application has the beneficial effects that:
1. the application combines two technical paths of transverse series connection and longitudinal series connection of the sub-cells of the traditional laser battery, and invents a laser battery component with a longitudinal 2-junction internal cascade structure. The longitudinal 2-junction structure has strong adaptability to the change of laser intensity and incident angle, the transverse internal cascade connection structure effectively improves the battery voltage, and the battery assembly integrally ensures high voltage and simultaneously reduces the loss of the effective area of the battery caused by the isolation groove. In the long-distance high-power laser wireless energy transmission application, the battery efficiency and the applicability can be considered.
2. The nano array structure is manufactured on the antireflection film, the light trapping structure can prolong the photon optical path, enhance the antireflection effect of the laser under the oblique incidence condition, and enhance the applicability of the laser battery assembly in wireless energy transmission application.
Drawings
Fig. 1 is a schematic cross-sectional view of a laser battery module according to a preferred embodiment of the present application.
Fig. 2 is a schematic top plan view of a laser battery assembly according to a preferred embodiment of the present application.
Fig. 3 is a schematic cross-sectional view of an epitaxial active layer of a laser cell assembly in accordance with a preferred embodiment of the present application.
In the figure:
100. an insulating substrate;
200. a lower electrode;
300. a battery epitaxial active layer;
310. a p-type electrode contact layer;
320. a first junction Ga (In) As subcell or a first junction GaInAsP subcell;
321. a GaInP back field or InP back field;
322、Ga x1 In 1-x1 as base region or Ga y1 In 1-y1 As z1 P 1-z1 A base region;
323、Ga x1 In 1-x1 as emitter region or Ga y1 In 1-y1 As z1 P 1-z1 An emission region;
324. a GaInP window layer or an InP window layer;
330. a tunneling junction;
331. n-type GaAs or n-type InP;
332. p-type GaAs or p-type InP;
340. a second junction Ga (In) As subcell or a second junction GaInAsP subcell;
341. a GaInP back field or InP back field;
342、Ga x2 In 1-x2 as base region or Ga y2 In 1-y2 As z2 P 1-z2 A base region;
343、Ga x2 In 1-x2 as emitter region or Ga y2 In 1-y2 As z2 P 1-z2 An emission region;
344. a GaInP window layer or an InP window layer;
350. n-type electrode contact layer
400. Upper electrode
500. Anti-reflection structure
600. Insulating layer
700. Bridged electrode
Detailed Description
The following will describe the technical solution in the embodiments of the present application in detail with reference to the drawings in the embodiments of the present application, so as to further understand the summary of the present application.
It will be apparent that the described embodiments are only some, but not all, embodiments of the application. Based on the technical solutions of the present application, all other embodiments obtained by a person skilled in the art without making any creative effort fall within the protection scope of the present application.
In the description of the present application, it should be understood that the terms "upper", "lower", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and the terms "first", "second", etc. are used to define components, only for convenience in describing the present application and simplifying the description, and are not to be construed as limiting the present application.
The object of the present application is to provide a laser battery assembly, as shown in fig. 1 and 2, comprising: an insulating substrate 100, 9 laser battery cells, isolation trenches, an insulating layer 600, and a bridging electrode 700.
The laser cell includes a lower electrode 200, a cell epitaxial active layer 300, an upper electrode 400, and an anti-reflective structure 500.
The isolation groove separates adjacent laser battery units, the insulating layer 600 insulates and passivates the side walls of the laser battery units, the bridging electrode 700 connects the upper electrode and the lower electrode of the adjacent laser battery units, the adjacent laser battery units are electrically connected, and the 9 laser battery units are sequentially connected in series.
Wherein: the material of the insulating substrate 100 is one of silicon oxide, polyimide, and quartz.
The area of each laser cell is the same.
In the first embodiment, a GaAs-based laser cell module for receiving 780-850 nm wavelength band has the following structure:
as shown in fig. 3, the cell epitaxial active layer 300 is a GaAs-based cell active layer, and includes, from bottom to top: a p-type electrode contact layer 310, a first junction Ga (In) As subcell 320, a tunneling junction 330, a second junction Ga (In) As subcell 340, and an n-type electrode contact layer 350.
Wherein: the first junction Ga (In) As subcell 320 includes from bottom to top: gaInP back field 321, ga x1 In 1-x1 As base region 322, ga x1 In 1-x1 An As emitter region 323, a GaInP window layer 324, wherein 0.8.ltoreq.x1.ltoreq.1.
The second junction Ga (In) As subcell 340 includes from bottom to top: gaInP back field 341, ga x2 In 1-x2 As base region 342, ga x2 In 1-x2 An As emitter 343, a GaInP window layer 344, where 0.8.ltoreq.x2.ltoreq.1.
The p-type electrode contact layer 310 is a p-type GaAs layer with a doping concentration of 1×10 18 ～1×10 19 cm -3 The thickness is 100-200 nm.
The GaInP back fields 321, 341 are p-type doped with a doping concentration of 1×10 17 ～1×10 18 cm -3 The thickness is 50-400 nm.
The GaInP window layers 324, 344 are n-doped with a doping concentration of 1×10 17 ～1×10 18 cm -3 The thickness is 50-400 nm.
Ga x1 In 1-x1 As base region 322 is p-type doped with a doping concentration of 1×10 16 ～1×10 18 cm -3 The thickness is 1000-5000 nm.
Ga x1 In 1-x1 As emitter region 323 is doped n-type with a doping concentration of 1×10 17 ～1×10 19 cm -3 The thickness is 100-500 nm.
Ga x2 In 1-x2 As base region 342 is p-type doped with a doping concentration of 1×10 16 ～1×10 18 cm -3 The thickness is 1000-5000 nm.
Ga x2 In 1-x2 As emitter region 343 is n-doped with a doping concentration of 1×10 17 ～1×10 19 cm -3 The thickness is 100-500 nm.
The tunneling junction includes: n-type GaAs layer 334 and p-type GaAs layer 332 are doped at a concentration of 1×10 19 ～1×10 21 cm -3 The thickness is 10-100 nm.
The n-type electrode contact layer 350 is an n-type GaAs layer with a doping concentration of 1×10 18 ～1×10 19 cm -3 The thickness is 100-200 nm.
The upper electrode 400 and the bridging electrode 700 are made of Au/Ge/Ag, and the thickness is 2-5 mu m; the lower electrode 200 is made of Ti/Pd/Au/Ge/Au, and has a thickness of 4-8 μm.
The insulating layer 600 is polyimide gel.
The anti-reflection structure 500 includes from bottom to top: titanium oxide/silicon oxide antireflection film and nano array light trapping structure.
In a second embodiment, an InP-based laser cell assembly for receiving 950-1600 nm wavelength bands has the following structure:
as shown in fig. 3, the cell epitaxial active layer 300 is an InP-based cell active layer, comprising, from bottom to top: a p-type electrode contact layer 310, a first junction GaInAsP subcell 320, a tunneling junction 330, a second junction GaInAsP subcell 340, and an n-type electrode contact layer 350.
Wherein, the first junction GaInAsP subcell 320 includes from bottom to top: inP back field 321, ga y1 In 1-y1 As z1 P 1-z1 Base region 322, ga y1 In 1-y1 As z1 P 1-z1 Base emitter region 323, inP window layer 324, wherein 0.ltoreq.y1.ltoreq.0.5, 0.ltoreq.z1.ltoreq.1.
The second junction GaInAsP subcell 340 includes from bottom to top: inP back field 341, ga y2 In 1-y2 As z2 P 1-z2 Base region 342, ga y2 In 1-y2 As z2 P 1-z2 Emitter region 343, inP window layer 344, wherein 0.ltoreq.y2.ltoreq.0.5, 0.ltoreq.z2.ltoreq.1.
The p-type electrode contact layer 310 is a p-type InP layer with a doping concentration of 1×10 18 ～1×10 19 cm -3 The thickness is 100-200 nm.
The InP back fields 321, 341 are p-type doped with a doping concentration of 1×10 17 ～1×10 18 cm -3 The thickness is 50-400 nm.
The InP window layers 324, 344 are n-doped with a doping concentration of 1×10 17 ～1×10 18 cm -3 The thickness is 50-400 nm.
Ga y1 In 1-y1 As z1 P 1-z1 Base region 322 is p-doped with a doping concentration of 1×10 16 ～1×10 18 cm -3 The thickness is 1000-5000 nm.
Ga y1 In 1-y1 As z1 P 1-z1 Emitter region 323 is n-doped with a doping concentration of 1×10 17 ～1×10 19 cm -3 The thickness is 100-500 nm.
Ga y2 In 1-y2 As z2 P 1-z2 Base region 342 is p-doped with a doping concentration of 1×10 16 ～1×10 18 cm -3 The thickness is 1000-5000 nm.
Ga y2 In 1-y2 As z2 P 1-z2 Emitter region 343 is n-doped with a doping concentration of 1×10 17 ～1×10 19 cm -3 The thickness is 100-500 nm.
The tunneling junction includes: an n-type InP layer 334 and a p-type InP layer 332 with a doping concentration of 1×10 19 ～1×10 21 cm -3 The thickness is 10-100 nm.
The n-type electrode contact layer 350 is an n-type GaInAs layer with a doping concentration of 1×10 18 ～1×10 19 cm -3 The thickness is 100-200 nm.
The upper electrode 400 and the bridging electrode 700 are made of Au/Ge/Ag, and the thickness is 2-5 mu m; the lower electrode 200 is made of Ti/Pd/Au/Ge/Au, and has a thickness of 4-8 μm.
The insulating layer 600 is polyimide gel.
The anti-reflection structure 500 includes from bottom to top: titanium oxide/silicon oxide antireflection film and nano array light trapping structure.
The foregoing description is only of the preferred embodiments of the present application, and is not intended to limit the application in any way, but any simple modification, equivalent variation and modification of the above embodiments according to the technical principles of the present application are within the scope of the technical solutions of the present application.
Claims (6)
1. A laser cell assembly, comprising: the device comprises an insulating substrate, M laser battery units, an isolation groove, an insulating layer and a bridging electrode; wherein: m is a natural number greater than 0;
the laser battery unit comprises a lower electrode, a battery epitaxial active layer, an upper electrode and an antireflection structure;
the isolation groove separates adjacent laser battery cells, the side wall of each laser battery cell is insulated and passivated by the insulating layer, the upper electrode and the lower electrode of each adjacent laser battery cell are connected by the bridging electrode, the adjacent laser battery cells are electrically connected, and M laser battery cells are sequentially connected in series;
the battery epitaxial active layer is a GaAs-based battery active layer and comprises the following components from bottom to top: a p-type electrode contact layer, a first junction Ga (In) As subcell, a tunneling junction, a second junction Ga (In) As subcell, and an n-type electrode contact layer;
the first junction Ga (In) As subcell comprises from bottom to top: gaInP back field, ga x1 In 1-x1 As base region, ga x1 In 1-x1 An As emission region and a GaInP window layer, wherein x1 is more than or equal to 0.8 and less than or equal to 1;
the second junctionThe Ga (In) As subcell comprises from bottom to top: gaInP back field, ga x2 In 1-x2 As base region, ga x2 In 1-x2 An As emission region and a GaInP window layer, wherein x2 is more than or equal to 0.8 and less than or equal to 1;
the p-type electrode contact layer is a p-type GaAs layer with doping concentration of 1×10 18 ～1×10 19 cm -3 The thickness is 100-200 nm;
the GaInP back field is p-type doped with doping concentration of 1×10 17 ～1×10 18 cm -3 The thickness is 50-400 nm;
the GaInP window layer is doped with n type with doping concentration of 1×10 17 ～1×10 18 cm -3 The thickness is 50-400 nm;
the Ga x1 In 1-x1 The As base region is doped with p type, and the doping concentration is 1 multiplied by 10 16 ～1×10 18 cm -3 The thickness is 1000-5000 nm;
the Ga x1 In 1-x1 The As emitting region is n-type doped with doping concentration of 1×10 17 ～1×10 19 cm -3 The thickness is 100-500 nm;
the Ga x2 In 1-x2 The As base region is doped with p type, and the doping concentration is 1 multiplied by 10 16 ～1×10 18 cm -3 The thickness is 1000-5000 nm;
the Ga x2 In 1-x2 The As emitting region is n-type doped with doping concentration of 1×10 17 ～1×10 19 cm -3 The thickness is 100-500 nm;
the tunneling junction includes: n-type GaAs and p-type GaAs layers with doping concentrations of 1×10 19 ～1×10 21 cm -3 The thickness is 10-100 nm;
the n-type electrode contact layer is an n-type GaAs layer with doping concentration of 1×10 18 ～1×10 19 cm -3 The thickness is 100-200 nm;
or, the battery epitaxial active layer is an InP-based battery active layer, which comprises from bottom to top: a p-type electrode contact layer, a first junction GaInAsP subcell, a tunneling junction, a second junction GaInAsP subcell, and an n-type electrode contact layer;
the first junction GaInAsP subcell includes from bottom to top: inP back surface field, ga y1 In 1-y1 As z1 P 1-z1 Base region, ga y1 In 1- y1 As z1 P 1-z1 An emission region and an InP window layer, wherein y1 is more than or equal to 0 and less than or equal to 0.5, and z1 is more than or equal to 0 and less than or equal to 1;
the second junction GaInAsP subcell includes from bottom to top: inP back surface field, ga y2 In 1-y2 As z2 P 1-z2 Base region, ga y2 In 1- y2 As z2 P 1-z2 An emission region and an InP window layer, wherein y2 is more than or equal to 0 and less than or equal to 0.5, and z2 is more than or equal to 0 and less than or equal to 1;
the p-type electrode contact layer is a p-type GaInAs layer with doping concentration of 1×10 18 ～1×10 19 cm -3 The thickness is 100-200 nm;
the InP back field is p-type doped with doping concentration of 1×10 17 ～1×10 18 cm -3 The thickness is 50-400 nm;
the InP window layer is n-type doped with doping concentration of 1×10 17 ～1×10 18 cm -3 The thickness is 50-400 nm;
the Ga y1 In 1-y1 As z1 P 1-z1 The base region is doped with p-type material with doping concentration of 1×10 16 ～1×10 18 cm -3 The thickness is 1000-5000 nm;
the Ga y1 In 1-y1 As z1 P 1-z1 The emitter region is doped n-type with doping concentration of 1×10 17 ～1×10 19 cm -3 The thickness is 100-500 nm;
the Ga y2 In 1-y2 As z2 P 1-z2 The base region is doped with p-type material with doping concentration of 1×10 16 ～1×10 18 cm -3 The thickness is 1000-5000 nm;
the Ga y2 In 1-y2 As z2 P 1-z2 The emitter region is doped n-type with doping concentration of 1×10 17 ～1×10 19 cm -3 The thickness is 100-500 nm;
the tunneling junction includes: n-type InP and p-type InPA layer with a doping concentration of 1X 10 19 ～1×10 21 cm -3 The thickness is 10-100 nm;
the n-type electrode contact layer is an n-type GaInAs layer with doping concentration of 1×10 18 ～1×10 19 cm -3 The thickness is 100-200 nm.
2. The laser cell assembly of claim 1, wherein: the insulating substrate is made of one of silicon oxide, polyimide and quartz.
3. The laser cell assembly of claim 1, wherein: the areas of the M laser battery cells are the same.
4. The laser cell assembly of claim 1, wherein: the upper electrode and the bridging electrode are made of Au/Ge/Ag, and the thickness is 2-5 mu m; the lower electrode is made of Ti/Pd/Au/Ge/Au, and the thickness is 4-8 mu m.
5. The laser cell assembly of claim 1, wherein: the insulating layer is polyimide glue.
6. The laser cell assembly of claim 1, wherein: the anti-reflection structure comprises from bottom to top: titanium oxide/silicon oxide antireflection film and nano array light trapping structure.
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