CN115172500A - Laser battery pack - Google Patents
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- CN115172500A CN115172500A CN202210817562.XA CN202210817562A CN115172500A CN 115172500 A CN115172500 A CN 115172500A CN 202210817562 A CN202210817562 A CN 202210817562A CN 115172500 A CN115172500 A CN 115172500A
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- 238000002955 isolation Methods 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 18
- 230000005641 tunneling Effects 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000004642 Polyimide Substances 0.000 claims description 7
- 229920001721 polyimide Polymers 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000003292 glue Substances 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 3
- 210000004027 cell Anatomy 0.000 abstract description 22
- 230000005540 biological transmission Effects 0.000 abstract description 11
- 210000003850 cellular structure Anatomy 0.000 abstract description 3
- 238000009413 insulation Methods 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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Abstract
The invention discloses a laser battery pack, which belongs to the technical field of photovoltaic batteries and comprises: the laser battery comprises an insulating substrate, M laser battery units, an isolation groove, an insulating layer and a bridging electrode. The laser battery unit comprises a lower electrode, a battery epitaxial active layer, an upper electrode and an antireflection structure. The laser battery units are separated by the isolation grooves, the side walls of the laser battery units are insulated and passivated by the insulation layers, the upper electrodes and the lower electrodes of the adjacent laser battery units are connected by the bridging electrodes, the electrical connection of the adjacent laser battery units is realized, and the M laser battery units are sequentially connected in series. The laser cell component with the structure can give consideration to both cell efficiency and applicability in the application of long-distance high-power laser wireless energy transmission.
Description
Technical Field
The invention belongs to the technical field of photovoltaic cells, and particularly relates to a laser cell assembly.
Background
The laser wireless energy transmission has the advantages of high transmission energy density, high transmission and conversion efficiency, high comprehensive energy utilization rate, small system volume, small limitation on energy supply scenes and the like, and is very suitable for space environment application. Solar energy conversion is realized to high rail space vehicle's solar cell array for the electric energy, and the electric energy is the laser again for, realizes laser with the help of laser battery to other space vehicle or near space unmanned aerial vehicle energy supplies. The laser battery is the most important component of the laser receiving end of the wireless energy transmission system. The photoelectric conversion efficiency of the laser cell component directly determines the overall transmission efficiency of the wireless energy transmission system.
The wireless biography of laser of long-distance high power can, guarantee the higher photoelectric conversion efficiency of laser battery subassembly among the practical application, put forward more harsh requirement to the laser battery subassembly, include: large size, high voltage and strong adaptability to laser intensity and incidence angle variation. For a single-junction III-V group semiconductor laser battery, under the irradiation of high-power laser, a large working current is generated, and the excessive current causes higher energy loss in a circuit, so that the photoelectric conversion efficiency of a laser battery component is reduced. The method of connecting sub-cells in series is generally adopted to increase the voltage of the battery, thereby reducing the output current of the battery.
The conventional laser battery sub-cell has a series structure of two types, i.e., a transverse structure and a longitudinal structure. However, there are dividing regions between the sub-cells in the lateral series structure, which reduces the effective power generation area of the cell. The longitudinal series structure can only optimize the absorption thickness of each junction of the sub-cells according to single laser intensity. Both light intensity and angle of incidence variations affect its efficiency, and the more longitudinal junctions the greater the effect. Therefore, the laser battery with the traditional structure cannot meet the requirement of long-distance high-power laser wireless energy transmission.
Disclosure of Invention
The invention provides a laser battery assembly for solving the technical problems in the prior art, which can simultaneously meet three requirements of large size, high voltage and strong adaptability to laser light intensity and incident angle change of a laser battery assembly in long-distance high-power laser wireless energy transmission, and has the advantages of larger effective light receiving area of the battery, smaller series resistance of the battery and higher photoelectric conversion efficiency.
An object of the present invention is to provide a laser battery assembly comprising: insulating substrate, M laser battery unit, isolation tank, insulating layer, bridging electrode, wherein: m is a natural number greater than 0.
The laser battery unit comprises a lower electrode, a battery epitaxial active layer, an upper electrode and an antireflection structure.
The isolation groove separates adjacent laser battery units, the insulating layer insulates and passivates the side wall of each laser battery unit, the bridging electrode connects the upper electrode and the lower electrode of each adjacent laser battery unit to realize the electrical connection of the adjacent laser battery units, and the M laser battery units are sequentially connected in series.
Preferably, the material of the insulating substrate is one of silicon oxide, polyimide and quartz.
Preferably, the M laser battery cells have the same area.
As an optional structure, the cell epitaxial active layer is a GaAs-based cell active layer, and includes, from bottom to top: the solar cell comprises a p-type electrode contact layer, a first Ga (In) As subcell, a tunneling junction, a second Ga (In) As subcell and an n-type electrode contact layer.
Preferably, the first junction Ga (In) As subcell comprises, from bottom to top: gaInP back surface field, ga x1 In 1-x1 As base region and Ga x1 In 1-x1 An As emitting region and a GaInP window layer, wherein x1 is more than or equal to 0.8 and less than or equal to 1.
Preferably, the second junction Ga (In) As subcell comprises, from bottom to top: gaInP back surface field, ga x2 In 1-x2 As base region and Ga x2 In 1-x2 An As emitting region and a GaInP window layer, wherein x2 is more than or equal to 0.8 and less than or equal to 1.
Preferably, the p-type electrode contact layer is a p-type GaAs layer with a doping concentration of 1 × 10 18 ～1×10 19 cm -3 Thickness of 100～200nm。
Preferably, the GaInP back field is doped p-type with the doping concentration of 1 × 10 17 ～1×10 18 cm -3 The thickness is 50-400 nm.
Preferably, the GaInP window layer is doped n-type with a doping concentration of 1 × 10 17 ～1×10 18 cm -3 The thickness is 50-400 nm.
Preferably, the Ga is x1 In 1-x1 The As base region is doped p-type with a doping concentration of 1 × 10 16 ～1×10 18 cm -3 The thickness is 1000-5000 nm.
Preferably, the Ga x1 In 1-x1 The As emitting region is doped n-type with a doping concentration of 1 × 10 17 ～1×10 19 cm -3 The thickness is 100-500 nm.
Preferably, the Ga x2 In 1-x2 The As base region is doped p-type with a doping concentration of 1 × 10 16 ～1×10 18 cm -3 The thickness is 1000-5000 nm.
Preferably, the Ga x2 In 1-x2 The As emitting region is doped n-type with a doping concentration of 1 × 10 17 ～1×10 19 cm -3 The thickness is 100-500 nm.
Preferably, the tunneling junction includes: n-type GaAs layer and p-type GaAs layer with doping concentration of 1 × 10 19 ～1×10 21 cm -3 The thickness is 10-100 nm.
Preferably, the n-type electrode contact layer is an n-type GaAs layer with a doping concentration of 1 × 10 18 ～1×10 19 cm -3 The thickness is 100-200 nm.
As another optional structure, the cell epitaxial active layer is an InP-based cell active layer, and includes, from bottom to top: the solar cell comprises a p-type electrode contact layer, a first junction GaInAsP sub-cell, a tunneling junction, a second junction GaInAsP sub-cell and an n-type electrode contact layer.
Preferably, the first junction GaInAsP subcell includes, from bottom to top: inP back surface field, ga y1 In 1-y1 As z1 P 1-z1 Base region, ga y1 In 1-y1 As z1 P 1-z1 An emitting region and an InP window layer, wherein y1 is more than or equal to 0 and less than or equal to 0.5,0 and less than or equal to z1 and less than or equal to 1.
Preferably, the second junction GaInAsP sub-battery comprises, from bottom to top: inP back surface field, ga y2 In 1-y2 As z2 P 1-z2 Base region, ga y2 In 1-y2 As z2 P 1-z2 An emission region and an InP window layer, wherein y2 is more than or equal to 0 and less than or equal to 0.5,0 and more than or equal to z2 and less than or equal to 1.
Preferably, the p-type electrode contact layer is a p-type GaInAs layer with the doping concentration of 1 × 10 18 ～1×10 19 cm -3 The thickness is 100-200 nm.
Preferably, the InP back field is doped p-type with the doping concentration of 1 × 10 17 ～1×10 18 cm -3 The thickness is 50-400 nm.
Preferably, the InP window layer is doped n-type with a doping concentration of 1 × 10 17 ～1×10 18 cm -3 The thickness is 50-400 nm.
Preferably, the Ga is y1 In 1-y1 As z1 P 1-z1 The base region is doped p-type with a doping concentration of 1 × 10 16 ～1×10 18 cm -3 The thickness is 1000-5000 nm.
Preferably, the Ga y1 In 1-y1 As z1 P 1-z1 The emitter region is doped n-type with a doping concentration of 1 × 10 17 ～1×10 19 cm -3 The thickness is 100-500 nm.
Preferably, the Ga y2 In 1-y2 As z2 P 1-z2 The base region is doped p-type with a doping concentration of 1 × 10 16 ～1×10 18 cm -3 The thickness is 1000-5000 nm.
Preferably, the Ga is y2 In 1-y2 As z2 P 1-z2 The emitter region is doped n-type with a doping concentration of 1 × 10 17 ～1×10 19 cm -3 The thickness is 100-500 nm.
Preferably, the tunneling junction includes: n-type InP layer and p-type InP layer with doping concentration of 1 × 10 19 ～1×10 21 cm -3 The thickness is 10-100 nm.
Preferably, the n-type electrode contact layer is an n-type GaInAs layer with the doping concentration of 1 × 10 18 ～1×10 19 cm -3 The thickness is 100-200 nm.
Preferably, the upper electrode and the bridging electrode are made of Au/Ge/Ag and have the thickness of 2-5 μm; the lower electrode is made of Ti/Pd/Au/Ge/Au, and the thickness of the lower electrode is 4-8 mu m.
Preferably, the insulating layer is polyimide glue.
Preferably, the antireflection structure includes, from bottom to top: titanium oxide/silicon oxide antireflection coating, nanometer array light trapping structure.
The invention has the beneficial effects that:
1. the invention combines two technical paths of transverse series connection and longitudinal series connection of the conventional laser battery sub-battery, and invents a laser battery component with a longitudinal 2-structure inner-level connection structure. The longitudinal 2-junction structure has stronger adaptability to laser light intensity and incident angle change, the transverse internal cascade series connection structure effectively improves the battery voltage, and the battery assembly integrally reduces the loss of the effective area of the battery caused by the isolation groove while ensuring high voltage. In the application of long-distance high-power laser wireless energy transmission, the battery efficiency and the applicability can be considered at the same time.
2. The nano array structure is manufactured on the antireflection film, the light trapping structure can prolong a photon optical path, enhance the antireflection effect under the condition of oblique incidence of laser, and enhance the applicability of the laser cell component in wireless energy transmission application.
Drawings
FIG. 1 is a schematic cross-sectional view of a laser cell assembly according to a preferred embodiment of the present invention.
FIG. 2 is a schematic top view of a laser cell assembly according to a preferred embodiment of the present invention.
Fig. 3 is a schematic cross-sectional view of an epitaxial active layer of a laser cell assembly according to a preferred embodiment of the invention.
In the figure:
100. an insulating substrate;
200. a lower electrode;
300. a cell epitaxial active layer;
310. a p-type electrode contact layer;
320. a first-junction Ga (In) As subcell or a first-junction GaInAsP subcell;
321. a GaInP back-surface field or an InP back-surface field;
322、Ga x1 In 1-x1 as base region or Ga y1 In 1-y1 As z1 P 1-z1 A base region;
323、Ga x1 In 1-x1 as emitter region or Ga y1 In 1-y1 As z1 P 1-z1 An emission region;
324. a GaInP window layer or an InP window layer;
330. a tunneling junction;
331. n-type GaAs or n-type InP;
332. p-type GaAs or p-type InP;
340. a second-junction Ga (In) As subcell or a second-junction GaInAsP subcell;
341. a GaInP back-surface field or an InP back-surface field;
342、Ga x2 In 1-x2 as base region or Ga y2 In 1-y2 As z2 P 1-z2 A base region;
343、Ga x2 In 1-x2 as emitter region or Ga y2 In 1-y2 As z2 P 1-z2 An emission region;
344. a GaInP window layer or an InP window layer;
350. n-type electrode contact layer
400. Upper electrode
500. Antireflection structure
600. Insulating layer
700. Bridged electrode
Detailed Description
The following detailed description will be given with reference to the drawings in the embodiments of the present application to further understand the disclosure of the present invention.
It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments obtained by those skilled in the art without creative efforts based on the technical solutions of the present invention belong to the protection scope of the present invention.
In the description of the present invention, it should be understood that the terms "upper", "lower", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and the terms "first", "second", and the like are used to define parts, which are merely for convenience of description and simplification of description, and are not to be construed as limiting the present invention.
The invention aims to provide a laser battery pack, as shown in figures 1 and 2, comprising: insulating substrate 100, 9 laser battery units, isolation groove, insulating layer 600, bridging electrode 700.
The laser battery unit comprises a lower electrode 200, a battery epitaxial active layer 300, an upper electrode 400 and an antireflection structure 500.
The isolation groove separates adjacent laser battery units, the insulating layer 600 insulates and passivates the side wall of each laser battery unit, the bridging electrode 700 connects the upper electrode and the lower electrode of each adjacent laser battery unit to realize the electrical connection of the adjacent laser battery units, and the 9 laser battery units are sequentially connected in series.
Wherein: the material of the insulating substrate 100 is one of silicon oxide, polyimide, and quartz.
The area of each laser battery unit is the same.
In one embodiment, a GaAs-based laser cell assembly for receiving a wavelength band of 780 to 850nm has the following structure:
as shown in fig. 3, the cell epitaxial active layer 300 is a GaAs-based cell active layer, and includes, from bottom to top: a p-type electrode contact layer 310, a first Ga (In) As subcell 320, a tunneling junction 330, a second Ga (In) As subcell 340, and an n-type electrode contact layer 350.
Wherein: the first-junction Ga (In) As subcell 320 includes, from bottom to top: gaInP back surface field 321, ga x1 In 1-x1 As base region 322, ga x1 In 1-x1 An As emitting region 323 and a GaInP window layer 324, wherein x1 is more than or equal to 0.8 and less than or equal to 1.
The second junction Ga (In) As subcell 340 includes, from bottom to top: gaInP back field 341, ga x2 In 1-x2 As base region 342, ga x2 In 1-x2 An As emitting region 343, a GaInP window layer 344, wherein x2 is more than or equal to 0.8 and less than or equal to 1.
The p-type electrode contact layer 310 is a p-type GaAs layer with a doping concentration of 1 × 10 18 ～1×10 19 cm -3 The thickness is 100-200 nm.
The GaInP back fields 321 and 341 are doped p-type with a doping concentration of 1 × 10 17 ～1×10 18 cm -3 The thickness is 50-400 nm.
The GaInP window layers 324, 344 are n-type doped with a doping concentration of 1 × 10 17 ～1×10 18 cm -3 The thickness is 50-400 nm.
Ga x1 In 1-x1 The As base region 322 is doped p-type with a doping concentration of 1 × 10 16 ～1×10 18 cm -3 The thickness is 1000-5000 nm.
Ga x1 In 1-x1 As emitter region 323 is n-type doped with a doping concentration of 1 × 10 17 ～1×10 19 cm -3 The thickness is 100-500 nm.
Ga x2 In 1-x2 The As base region 342 is doped p-type with a doping concentration of 1 × 10 16 ～1×10 18 cm -3 The thickness is 1000-5000 nm.
Ga x2 In 1-x2 The As emitter region 343 is n-type doped with a doping concentration of 1 × 10 17 ～1×10 19 cm -3 The thickness is 100-500 nm.
The tunneling junction includes: n-type GaAs layer 334 and p-type GaAs layer 332 with doping concentration of 1 × 10 19 ～1×10 21 cm -3 The thickness is 10-100 nm.
The n-type electrode contact layer 350 is an n-type GaAs layer with a doping concentration of 1 × 10 18 ～1×10 19 cm -3 The thickness is 100-200 nm.
The upper electrode 400 and the bridging electrode 700 are made of Au/Ge/Ag and have the thickness of 2-5 mu m; the lower electrode 200 is made of Ti/Pd/Au/Ge/Au and has a thickness of 4-8 μm.
The insulating layer 600 is polyimide glue.
The antireflection structure 500 includes, from bottom to top: titanium oxide/silicon oxide antireflection film, nanometer array light trapping structure.
In a second embodiment, an InP-based laser cell module for receiving a wavelength band of 950 to 1600nm has the following structure:
as shown in fig. 3, the cell epitaxial active layer 300 is an InP-based cell active layer, and includes, from bottom to top: a p-type electrode contact layer 310, a first junction GaInAsP sub-cell 320, a tunneling junction 330, a second junction GaInAsP sub-cell 340 and an n-type electrode contact layer 350.
Wherein, the first GaInAsP subcell 320 comprises from bottom to top: inP back surface field 321, ga y1 In 1-y1 As z1 P 1-z1 Base region 322, ga y1 In 1-y1 As z1 P 1-z1 A base emitter region 323 and an InP window layer 324, wherein y1 is more than or equal to 0 and less than or equal to 0.5,0 and less than or equal to z1 and less than or equal to 1.
The second junction GaInAsP subcell 340 includes, from bottom to top: inP back surface field 341, ga y2 In 1-y2 As z2 P 1-z2 Base region 342, ga y2 In 1-y2 As z2 P 1-z2 An emission region 343, an InP window layer 344, wherein y2 is more than or equal to 0 and less than or equal to 0.5,0 and more than or equal to z2 and less than or equal to 1.
The p-type electrode contact layer 310 is a p-type InP layer with a doping concentration of 1 × 10 18 ～1×10 19 cm -3 The thickness is 100-200 nm.
The InP back fields 321 and 341 are doped p-type with a doping concentration of 1 × 10 17 ～1×10 18 cm -3 The thickness is 50-400 nm.
The InP window layers 324, 344 are n-type doped with a doping concentration of 1 × 10 17 ～1×10 18 cm -3 The thickness is 50-400 nm.
Ga y1 In 1-y1 As z1 P 1-z1 The base region 322 is doped p-type with a doping concentration of 1 × 10 16 ～1×10 18 cm -3 The thickness is 1000-5000 nm.
Ga y1 In 1-y1 As z1 P 1-z1 The emitter region 323 is doped n-type with a doping concentration of 1 × 10 17 ～1×10 19 cm -3 The thickness is 100 to 500nm。
Ga y2 In 1-y2 As z2 P 1-z2 The base region 342 is doped p-type with a doping concentration of 1 × 10 16 ～1×10 18 cm -3 The thickness is 1000-5000 nm.
Ga y2 In 1-y2 As z2 P 1-z2 The emitter region 343 is n-type doped with a doping concentration of 1 × 10 17 ～1×10 19 cm -3 The thickness is 100-500 nm.
The tunneling junction includes: n-type InP layer 334 and p-type InP layer 332 with doping concentration of 1 × 10 19 ～1×10 21 cm -3 The thickness is 10-100 nm.
The n-type electrode contact layer 350 is an n-type GaInAs layer with a doping concentration of 1 × 10 18 ～1×10 19 cm -3 The thickness is 100-200 nm.
The upper electrode 400 and the bridging electrode 700 are made of Au/Ge/Ag and have the thickness of 2-5 mu m; the lower electrode 200 is made of Ti/Pd/Au/Ge/Au and has a thickness of 4-8 μm.
The insulating layer 600 is polyimide glue.
The anti-reflective structure 500 includes, from bottom to top: titanium oxide/silicon oxide antireflection film, nanometer array light trapping structure.
The above description is only for the preferred embodiment of the present invention, and is not intended to limit the present invention in any way, and all simple modifications, equivalent changes and modifications made to the above embodiment according to the technical spirit of the present invention are within the scope of the technical solution of the present invention.
Claims (10)
1. A laser battery assembly, comprising: the device comprises an insulating substrate, M laser battery units, an isolation groove, an insulating layer and a bridging electrode; wherein: m is a natural number greater than 0;
the laser battery unit comprises a lower electrode, a battery epitaxial active layer, an upper electrode and an antireflection structure;
the isolation groove separates adjacent laser battery units, the insulating layer insulates and passivates the side wall of each laser battery unit, the bridging electrode connects the upper electrode and the lower electrode of each adjacent laser battery unit to realize the electrical connection of the adjacent laser battery units, and the M laser battery units are sequentially connected in series.
2. The laser battery assembly of claim 1, wherein: the insulating substrate is made of one of silicon oxide, polyimide and quartz.
3. The laser battery assembly of claim 1, wherein: the areas of the M laser battery units are the same.
4. The laser battery assembly of claim 1, wherein: the cell epitaxial active layer is a GaAs-based cell active layer and comprises the following components from bottom to top: the solar cell comprises a p-type electrode contact layer, a first Ga (In) As sub-cell, a tunneling junction, a second Ga (In) As sub-cell and an n-type electrode contact layer;
the first-junction Ga (In) As subcell includes, from bottom to top: gaInP back surface field, ga x1 In 1-x1 As base region and Ga x1 In 1-x1 An As emission region and a GaInP window layer, wherein x1 is more than or equal to 0.8 and less than or equal to 1;
the second-junction Ga (In) As sub-battery comprises from bottom to top: gaInP back surface field, ga x2 In 1-x2 As base region and Ga x2 In 1-x2 An As emitting region and a GaInP window layer, wherein x2 is more than or equal to 0.8 and less than or equal to 1.
5. The laser cell assembly of claim 4, wherein:
the p-type electrode contact layer is a p-type GaAs layer with the doping concentration of 1 × 10 18 ～1×10 19 cm -3 The thickness is 100-200 nm;
the GaInP back field is p-type doped with a doping concentration of 1 × 10 17 ～1×10 18 cm -3 The thickness is 50-400 nm;
the GaInP window layer is doped in n type with a doping concentration of 1 × 10 17 ～1×10 18 cm -3 The thickness is 50-400 nm;
the Ga is x1 In 1-x1 The As base region is doped p-type with a doping concentration of 1 × 10 16 ～1×10 18 cm -3 The thickness is 1000-5000 nm;
the Ga x1 In 1-x1 The As emitting region is doped n-type with a doping concentration of 1 × 10 17 ～1×10 19 cm -3 The thickness is 100-500 nm;
the Ga is x2 In 1-x2 The As base region is doped p-type with a doping concentration of 1 × 10 16 ～1×10 18 cm -3 The thickness is 1000-5000 nm;
the Ga is x2 In 1-x2 The As emitting region is doped n-type with a doping concentration of 1 × 10 17 ～1×10 19 cm -3 The thickness is 100-500 nm;
the tunneling junction includes: n-type GaAs and p-type GaAs layers with doping concentration of 1 × 10 19 ～1×10 21 cm -3 The thickness is 10-100 nm;
the n-type electrode contact layer is an n-type GaAs layer with the doping concentration of 1 × 10 18 ～1×10 19 cm -3 The thickness is 100-200 nm.
6. The laser battery assembly of claim 1, wherein: the battery epitaxial active layer is an InP-based battery active layer and comprises the following components from bottom to top: the device comprises a p-type electrode contact layer, a first GaInAsP sub-battery, a tunneling junction, a second GaInAsP sub-battery and an n-type electrode contact layer;
the first GaInAsP subcell comprises from bottom to top: inP back surface field, ga y1 In 1-y1 As z1 P 1-z1 Base region, ga y1 In 1- y1 As z1 P 1-z1 The emitting region and the InP window layer, wherein y is more than or equal to 0 and less than or equal to 0.5,0 and less than or equal to z1 and less than or equal to 1;
the second-junction GaInAsP sub-battery comprises from bottom to top: inP back surface field, ga y2 In 1-y2 As z2 P 1-z2 Base region, ga y2 In 1- y2 As z2 P 1-z2 An emitting region and an InP window layer, wherein y2 is more than or equal to 0 and less than or equal to 0.5,0 and less than or equal to z2 and less than or equal to 1.
7. The laser battery assembly of claim 6, wherein:
the p-type electrode contact layer is a p-type GaInAs layer with the doping concentration of 1 × 10 18 ～1×10 19 cm -3 The thickness is 100-200 nm;
the InP back field is p-type doped with a doping concentration of 1 × 10 17 ～1×10 18 cm -3 The thickness is 50-400 nm;
the InP window layer is doped in n type with a doping concentration of 1 × 10 17 ～1×10 18 cm -3 The thickness is 50-400 nm;
the Ga y1 In 1-y1 As z1 P 1-z1 The base region is doped p-type with a doping concentration of 1 × 10 16 ～1×10 18 cm -3 The thickness is 1000-5000 nm;
the Ga is y1 In 1-y1 As z1 P 1-z1 The emitter region is doped n-type with a doping concentration of 1 × 10 17 ～1×10 19 cm -3 The thickness is 100-500 nm;
the Ga is y2 In 1-y2 As z2 P 1-z2 The base region is doped p-type with a doping concentration of 1 × 10 16 ～1×10 18 cm -3 The thickness is 1000-5000 nm;
the Ga is y2 In 1-y2 As z2 P 1-z2 The emitter region is doped n-type with a doping concentration of 1 × 10 17 ～1×10 19 cm -3 The thickness is 100-500 nm;
the tunneling junction includes: n-type InP and p-type InP layers with doping concentration of 1 × 10 19 ～1×10 21 cm -3 The thickness is 10-100 nm;
the n-type electrode contact layer is an n-type GaInAs layer with the doping concentration of 1 multiplied by 10 18 ～1×10 19 cm -3 The thickness is 100-200 nm.
8. The laser battery assembly of claim 1, wherein: the upper electrode and the bridging electrode are made of Au/Ge/Ag and have the thickness of 2-5 mu m; the lower electrode is made of Ti/Pd/Au/Ge/Au, and the thickness of the lower electrode is 4-8 mu m.
9. The laser battery assembly of claim 1, wherein: the insulating layer is made of polyimide glue.
10. The laser battery assembly of claim 1, wherein: the antireflection structure comprises from bottom to top: titanium oxide/silicon oxide antireflection film, nanometer array light trapping structure.
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