CN216749922U

CN216749922U - Multi-junction laminated solar cell

Info

Publication number: CN216749922U
Application number: CN202123202597.2U
Authority: CN
Inventors: 彭学圆; 王新昊; 夏祥慧; 王舒正; 季莲
Original assignee: Nanjing Tech University
Current assignee: Nanjing Tech University
Priority date: 2021-12-20
Filing date: 2021-12-20
Publication date: 2022-06-14
Anticipated expiration: 2031-12-20

Abstract

The utility model discloses a multijunction stromatolite solar cell, include multijunction solar cell and lay the lower conversion part in the solar cell top. The utility model discloses a down conversion part of the directional regulation and control of wavelength turns into high energy photon can be by the absorptive low energy photon of partial subcell, improves this subcell electric current, realizes the electric current matching between each subcell, has improved solar cell efficiency.

Description

Multi-junction laminated solar cell

Technical Field

The utility model relates to a solar cell especially relates to a multijunction stromatolite solar cell.

Background

With the development of economy and the progress of science and technology, the larger the demand of people on energy is originally, the more important the development of solar cell technology is due to energy crisis and environmental pollution. The major bottlenecks restricting the development of solar cell technology have been low photoelectric conversion efficiency and high cost, and high efficiency solar cells have been the hot spot of research in this field. Compared with a silicon solar cell, the multi-junction III-V compound semiconductor solar cell absorbs a part of sunlight matched with the band gap width of the multi-junction III-V compound semiconductor solar cell by using a plurality of semiconductor materials with different band gap widths, so that the wide spectrum absorption of the sunlight is realized, and higher photoelectric conversion efficiency is obtained. However, when the sub-cells in the multi-junction solar cell are connected in series, and the currents generated by the sub-cells are not equal, the output current is limited by the minimum sub-cell current, and further improvement of the cell efficiency is limited.

SUMMERY OF THE UTILITY MODEL

Utility model purpose: the utility model discloses to the problem that prior art exists, a higher multijunction stromatolite solar cell of battery efficiency is provided.

The technical scheme is as follows: the utility model provides a multi-junction laminated solar cell includes from the top down superimposed down conversion part, top electrode in proper order, goes up contact layer, GaInP subcell, first GaAs tunnel junction, GaAs subcell, second GaAs tunnel junction, Ge subcell, lower contact layer and bottom electrode. The top electrode is a grid-shaped metal electrode, the lower conversion part is positioned above the upper contact layer and between the metal grid lines of the top electrode, and the lower conversion part is doped with Eu³⁺Ionic CsPbCl₃A nanocrystalline layer. The bottom electrode is a planar metal electrode.

The utility model discloses still provide another kind of multijunction stromatolite solar cell, include from the top down superimposed lower conversion part in proper order, top electrode, go up contact layer, GaInP subcell, GaInP tunnel junction, GaAs subcell, GaAs tunnel junction, InGaAsP subcell, InGaAs tunnel junction, InGaAs subcell, lower contact layer and bottom electrode, the top electrode is bars form metal electrode, lower conversion part is located go up between the metal grid line of top electrode, top electrode of contact layer, down the conversion part include from the top down the doping of setting Eu³⁺Ionic CsPbCl₃Nanocrystalline layer and doped Yb³⁺Ionic CsPbCl₃A nanocrystalline layer. The bottom electrode is a planar metal electrode.

Further, in the solar cell, the GaInP sub-cell comprises an n-AlInP window layer, an n-GaInP emitter region, a p-GaInP base region and a p-AlGaInP back field layer which are sequentially stacked from top to bottom. The GaAs sub-cell comprises an n-GaInP window layer, an n-GaAs emitter region, a p-GaAs base region and a p-GaInP back field layer which are sequentially overlapped from top to bottom. The Ge sub-cell comprises an n-GaInP window layer, an n-Ge emission region and a p-Ge base region which are sequentially overlapped from top to bottom. The InGaAsP sub-cell comprises an n-InP window layer, an n-InGaAsP emitter region, a p-InGaAsP base region and a p-InP back field layer which are sequentially stacked from top to bottom. The InGaAs sub-cell comprises an n-InP window layer, an n-InGaAs emitter region, a p-InGaAs base region and a p-InP back field layer which are sequentially stacked from top to bottom.

Has the advantages that: compared with the prior art, the utility model, it is showing the advantage and is: the utility model discloses an introduce the lower conversion part of the directional regulation and control of wavelength, adjust to the less subcell of electric current to realize the electric current matching between the subcell of multijunction stromatolite solar cell, improved solar cell's photoelectric conversion efficiency.

Drawings

Fig. 1 is a block diagram of one embodiment of a multi-junction tandem solar cell provided by the present invention;

FIG. 2 is a top schematic view of the multi-junction tandem solar cell of FIG. 1;

fig. 3 is a structural diagram of another embodiment of a multi-junction tandem solar cell provided by the present invention.

Detailed Description

Example 1

Referring to fig. 1, the multi-junction tandem solar cell of the present embodiment includes a lower conversion portion 11, a top electrode 12, an upper contact layer 13, a GaInP sub-cell 14, a first GaAs tunnel junction 15, a GaAs sub-cell 16, a second GaAs tunnel junction 17, a Ge sub-cell 18, a lower contact layer 19, and a bottom electrode 20, which are sequentially disposed from top to bottom, wherein the top electrode 12 is a grid-shaped metal electrode, the bottom electrode 20 is a planar metal electrode, the lower conversion portion 11 is located above the upper contact layer 13, and the top electrode 12 is made of goldBetween the gate lines 12a, as shown in fig. 2. The down-conversion part 11 is doped with Eu³⁺Ionic CsPbCl₃And a nanocrystalline layer with the diameter of 5-20nm is covered on the upper contact layer 13 and the position which is not covered by the top electrode 12 by a spin coating method during preparation.

The GaInP subcell 14 includes, from top to bottom, an n-AlInP window layer 111, an n-GaInP emitter region 112, a p-GaInP base region 113, and a p-AlGaInP back field layer 114. The GaAs sub-cell 16 sequentially comprises an n-GaInP window layer 115, an n-GaAs emitter region 116, a p-GaAs base region 117 and a p-GaInP back field layer 118 from top to bottom. The Ge sub-cell 18 comprises an n-GaInP window layer 119, an n-Ge emitter region 120 and a p-Ge base region 121 from top to bottom in sequence. The GaAs sub-cell produces less current than the GaInP and Ge sub-cells. The down-conversion part 11 can absorb photons with energy larger than the band gap energy (1.85eV) of the GaInP sub-cell and convert the photons with energy smaller than the band gap energy (1.85eV) of the GaInP sub-cell and larger than the band gap energy (1.43eV) of the GaAs sub-cell, so that the current of the GaAs sub-cell is increased, the current matching among the GaInP sub-cell, the GaAs sub-cell and the Ge sub-cell is realized, and the photoelectric conversion efficiency of the solar cell is improved.

Example 2

Referring to fig. 3, the multi-junction tandem solar cell of the present embodiment includes a lower conversion portion 21, a top electrode 22, an upper contact layer 23, a GaInP sub-cell 24, a GaInP tunnel junction 25, a GaAs sub-cell 26, a GaAs tunnel junction 27, an InGaAsP sub-cell 28, an InGaAs tunnel junction 29, an InGaAs sub-cell 30, a lower contact layer 31, and a bottom electrode 32, which are sequentially disposed from top to bottom. The top electrode 22 is a grid-like metal electrode, the bottom electrode 32 is a planar metal electrode, and the down-conversion portion 21 is located above the upper contact layer 23 and between the metal grid lines of the top electrode 22. The lower conversion part 21 comprises Eu doped sequentially from top to bottom³⁺Ionic CsPbCl₃Nanocrystalline layer 211 doped with Yb³⁺Ionic CsPbCl₃A nanocrystal layer 212. The diameter of the nano-crystal is 5-20nm, and the nano-crystal is covered on the upper contact layer 23 and the place which is not covered by the top electrode 22 by a spin coating method during preparation.

The GaInP sub-cell 24 includes an n-AlInP window layer 213, an n-GaInP emitter region 214, a p-GaInP base region 215, and a p-AlGaInP back field layer 216 in sequence from top to bottom. The GaAs sub-cell 26 sequentially comprises an n-GaInP window layer 217, an n-GaAs emitter region 218, a p-GaAs base region 219 and a p-GaInP back field layer 220 from top to bottom. The GaAs subcell produces less current than the GaInP and InGaAs subcells. The InGaAsP subcell 28 includes an n-InP window layer 221, an n-InGaAsP emitter region 222, a p-InGaAsP base region 223, and a p-InP back field layer 224 from top to bottom. The InGaAsP subcells produce less current than the GaInP and InGaAs subcells. The InGaAs sub-cell 30 sequentially comprises an n-InP window layer 225, an n-InGaAs emitter region 226, a p-InGaAs base region 227 and a p-InP back field layer 228 from top to bottom.

The band gap energies of the GaInP sub-cell, the GaAs sub-cell, the InGaAsP sub-cell and the InGaAs sub-cell are respectively 1.85eV, 1.43eV, 1.05eV and 0.55 eV. The GaAs sub-battery and the InGaAsP sub-battery generate smaller current than the GaInP sub-battery and the InGaAs sub-battery. The nanocrystalline layer 211 can absorb photons with energy higher than the band gap energy (1.85eV) of the GaInP subcell, convert the photons with energy lower than the band gap energy (1.85eV) of the GaInP subcell into photons with energy higher than the band gap energy (1.43eV) of the GaAs subcell, convert the photons with energy lower than the band gap energy (1.85eV) of the GaAs subcell into photons with energy lower than the band gap energy (1.43eV) of the GaAs subcell and higher than the band gap energy (1.05eV) of the InGaAsP subcell, thereby improving the current of the GaAs subcell and the InGaAsP subcell, realizing the current matching among the GaInP subcell, the GaAs subcell, the InGaAsP subcell and the InGaAs subcell and improving the photoelectric conversion efficiency of the solar cell.

Each sub-cell in the multi-junction solar cell is connected in series, and when currents generated by the sub-cells are unequal, the output current is limited to the minimum current. The embodiment directly solves the problem of current mismatching between the sub-cells through the down-conversion part, and improves the efficiency of the solar cell.

The above disclosure is only illustrative of the preferred embodiments of the present invention, and should not be taken as limiting the scope of the invention, which is defined by the appended claims.

Claims

1. Multi-junctionA tandem solar cell, characterized by: the device comprises a lower conversion part, a top electrode, an upper contact layer, a GaInP sub-battery, a first GaAs tunnel junction, a GaAs sub-battery, a second GaAs tunnel junction, a Ge sub-battery, a lower contact layer and a bottom electrode which are sequentially overlapped from top to bottom, wherein the top electrode is a grid-shaped metal electrode, the lower conversion part is positioned above the upper contact layer and between metal grid lines of the top electrode, and the lower conversion part is specifically doped with Eu³⁺Ionic CsPbCl₃A nanocrystalline layer.

2. The multi-junction tandem solar cell of claim 1, wherein: the GaInP sub-cell comprises an n-AlInP window layer, an n-GaInP emitting region, a p-GaInP base region and a p-AlGaInP back field layer which are sequentially overlapped from top to bottom.

3. The multi-junction tandem solar cell of claim 1, wherein: the GaAs sub-cell comprises an n-GaInP window layer, an n-GaAs emitter region, a p-GaAs base region and a p-GaInP back field layer which are sequentially overlapped from top to bottom.

4. The multi-junction tandem solar cell of claim 1, wherein: the Ge sub-battery comprises an n-GaInP window layer, an n-Ge emitting region and a p-Ge base region which are sequentially overlapped from top to bottom.

5. The multi-junction tandem solar cell of claim 1, wherein: the bottom electrode is a planar metal electrode.

6. A multi-junction tandem solar cell, comprising: the solar cell comprises a lower conversion part, a top electrode, an upper contact layer, a GaInP sub-battery, a GaInP tunnel junction, a GaAs sub-battery, a GaAs tunnel junction, an InGaAsP sub-battery, an InGaAs tunnel junction, an InGaAs sub-battery, a lower contact layer and a bottom electrode which are sequentially stacked from top to bottom, wherein the top electrode is a grid-shaped metal electrode, the lower conversion part is positioned above the upper contact layer and between metal grid lines of the top electrode, and the lower conversion part comprises a doped layer arranged from top to bottomIs mixed with Eu³⁺Ionic CsPbCl₃Nanocrystalline layer and doped Yb³⁺Ionic CsPbCl₃A nanocrystalline layer.

7. The multi-junction tandem solar cell of claim 6, wherein: the GaInP sub-cell comprises an n-AlInP window layer, an n-GaInP emitting region, a p-GaInP base region and a p-AlGaInP back field layer which are sequentially overlapped from top to bottom.

8. The multi-junction tandem solar cell of claim 6, wherein: the GaAs sub-battery comprises an n-GaInP window layer, an n-GaAs emission region, a p-GaAs base region and a p-GaInP back field layer which are sequentially overlapped from top to bottom.

9. The multi-junction tandem solar cell of claim 6, wherein: the InGaAsP sub-cell comprises an n-InP window layer, an n-InGaAsP emitter region, a p-InGaAsP base region and a p-InP back field layer which are sequentially stacked from top to bottom.

10. The multi-junction tandem solar cell of claim 6, wherein: the InGaAs sub-cell comprises an n-InP window layer, an n-InGaAs emitter region, a p-InGaAs base region and a p-InP back field layer which are sequentially stacked from top to bottom.