CN115332379A - Multi-junction solar cell with multi-quantum well structure - Google Patents
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Abstract
The present invention provides a multijunction solar cell having a multiple quantum well structure comprising: the multi-quantum well structure in the multi-junction solar cell is composed of a plurality of groups of first stacked film layers which are sequentially stacked, wherein the first stacked film layers comprise InGaAs potential well layers, first AlInGaAs transition layers, gaAsP potential barrier layers and second AlInGaAs transition layers, and the first AlInGaAs transition layers and the second AlInGaAs transition layers are different in thickness and/or composition. The two AlInGaAs transition layers can buffer and transition energy band steps existing on the interface between the potential well layer and the barrier layer; in addition, the thickness and/or the composition of the two AlInGaAs transition layers are different, so that the energy band of an interface between the potential well layer and the barrier layer can be further influenced, the problem that the atomic diffusion of different interfaces is different can be better solved, and the photoelectric performance of the multi-junction solar cell with the multi-quantum well structure is improved.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a multi-junction solar cell with a multi-quantum well structure.
Background
With the continuous development of science and technology, solar cells gradually enter people's lives, can directly convert solar energy into electric energy, are effective clean energy forms, have the advantages of good high-temperature resistance, strong radiation resistance and the like due to the highest conversion efficiency of III-V group compound semiconductor solar cells in the current material system, are known as a new generation of high-performance long-life space main power supply, and among the multi-junction solar cells with a GaInP/InGaAs/Ge lattice matching structure are widely applied in the aerospace field.
The current density of a top cell GaInP, a middle cell InGaAs and a bottom cell Ge in the traditional lattice matching multi-junction solar cell is not matched, and the improvement of the photoelectric conversion efficiency is limited. At present, two approaches can improve the current density of the sub-cell to solve the problem, one is to improve the cell efficiency by improving the In component of InGaAs of the middle cell, reducing the band gap of the middle top sub-cell, increasing the short-circuit current of the middle top sub-cell, and realizing better current matching with Ge of the bottom cell, but the high In component can cause larger lattice mismatch between the final Ge substrate and the InGaAs, thereby causing the performance reduction of the multi-junction solar cell; and the other approach is to adopt a quantum well structure, and because the quantum well structure introduces an intermediate energy level, the spectral response of the middle cell is expanded, and the matching current of the middle top sub-cell can be adjusted, so that the performance of the multi-junction solar cell is improved.
However, although the crystal defects can be reduced by balancing stress by adopting the stress balancing quantum well structure design in the prior art, the photoelectric performance of the multi-junction solar cell needs to be improved by enough quantum wells, and the excessive quantum wells cause the problem of atomic diffusion caused by too many interfaces, thereby finally affecting the photoelectric performance of the multi-junction solar cell with the multi-quantum well structure.
Disclosure of Invention
In view of the above, in order to solve the above problems, the present invention provides a multi-junction solar cell having a multi-quantum well structure, and the technical solution is as follows:
a multijunction solar cell having a multiquantum well structure, the multijunction solar cell comprising:
a substrate;
the first sub-battery, the second sub-battery and the third sub-battery are sequentially arranged on one side of the substrate in a first direction, and the first direction is perpendicular to the plane of the substrate and points to the first sub-battery from the substrate;
the second sub-battery comprises a multi-quantum well structure, the multi-quantum well structure comprises a plurality of groups of first stacked film layers, and the plurality of groups of first stacked film layers are sequentially stacked in the first direction;
the first stacked film layer comprises an InGaAs well layer, a first AlInGaAs transition layer, a GaAsP barrier layer and a second AlInGaAs transition layer which are sequentially stacked in the first direction;
wherein the first AlInGaAs transition layer and the second AlInGaAs transition layer are different in thickness and/or composition.
Preferably, in the multi-junction solar cell having a multi-quantum well structure, the second sub-cell is an InGaAs sub-cell, and the second sub-cell further includes:
in the first direction, a first emission region and a first window layer are sequentially arranged on one side, away from the substrate, of the multiple quantum well structure;
the first base region is positioned on one side, away from the first emitting region, of the multi-quantum well structure;
and the first back field layer is positioned on one side of the first base region, which is far away from the multiple quantum well structure.
Preferably, in the multi-junction solar cell having the multi-quantum well structure, the material of the first back field layer is GaInP material or AlGaAs material, and the material of the first window layer is AlGaInP material or AlInP material.
Preferably, in the multijunction solar cell having the multiquantum well structure, the number of cycles of the multiquantum well structure is in a range of 1 to 100.
Preferably, in the multijunction solar cell having a multiquantum well structure described above, the band gap of the first AlInGaAs transition layer is between the band gap of the InGaAs well layer and the band gap of the GaAsP barrier layer; the second AlInGaAs transition layer has a band gap between a band gap of the InGaAs well layer and a band gap of the GaAsP barrier layer.
Preferably, in the multijunction solar cell having the multiquantum well structure, the InGaAs well layer is In x Ga 1-x An As potential well layer, wherein the value range of x is more than or equal to 0 and less than or equal to 0.3;
the GaAsP barrier layer is GaAs 1-y P y The value range of y is more than or equal to 0 and less than or equal to 0.5;
said In x Ga 1-x The thickness of As potential well layer is 1nm-20nm, and the GaAs layer 1-y P y The barrier layer has a thickness in the range of 1nm to 20nm.
Preferably, in the multi-junction solar cell with the multi-quantum well structure, the thickness of the first AlInGaAs transition layer is smaller than that of the second AlInGaAs transition layer, the thickness of the first AlInGaAs transition layer is in a range from 0.5nm to 3nm, and the thickness of the second AlInGaAs transition layer is in a range from 1nm to 6nm.
Preferably, in the multi-junction solar cell having a multi-quantum well structure, the substrate is a p-type Ge substrate, and the first sub-cell further includes:
the n-type emission region is positioned on one side, facing the second sub-battery, of the p-type Ge substrate;
and the nucleation layer is positioned on one side of the n-type emitter region, which faces away from the p-type Ge substrate.
Preferably, in the multijunction solar cell having a multiquantum well structure described above, the multijunction solar cell further comprises:
a first tunneling junction between the first subcell and the second subcell;
the first tunneling junction comprises a first N-type layer and a first P-type layer which are sequentially arranged in the first direction;
a second tunneling junction between the second subcell and the third subcell;
the second tunneling junction comprises a second N-type layer and a second P-type layer which are sequentially arranged in the first direction.
Preferably, in the multi-junction solar cell with the multiple quantum well structure, the first N-type layer is made of GaAs material or GaInP material, the first P-type layer is made of GaAs material or AlGaAs material, the second N-type layer is made of GaAs material or GaInP material, and the second P-type layer is made of GaAs material or AlGaAs material.
Preferably, in the multi-junction solar cell having a multi-quantum well structure described above, the third sub-cell is a GaInP sub-cell or an AlGaInP sub-cell, and the third sub-cell further includes:
and in the first direction, a second back field layer, a second base region, a second emitter region and a second window layer are sequentially arranged on one side, away from the substrate, of the second sub-cell.
Preferably, in the multi-junction solar cell having the multi-quantum well structure, the material of the second back field layer is an AlGaInP material, and the material of the second window layer is an AlInP material.
Preferably, in the multijunction solar cell having a multiquantum well structure described above, the multijunction solar cell further comprises:
and the N-type contact layer is positioned on one side of the third sub-battery, which is far away from the substrate.
Compared with the prior art, the invention has the following beneficial effects:
the present invention provides a multijunction solar cell having a multiquantum well structure, the multijunction solar cell comprising: a substrate; the first sub-battery, the second sub-battery and the third sub-battery are sequentially arranged on one side of the substrate in a first direction, and the first direction is perpendicular to the plane of the substrate and points to the first sub-battery from the substrate; the second sub-battery comprises a multi-quantum well structure, the multi-quantum well structure comprises a plurality of groups of first stacked film layers, and the plurality of groups of first stacked film layers are sequentially stacked in the first direction; the first stacked film layer comprises an InGaAs potential well layer, a first AlInGaAs transition layer, a GaAsP barrier layer and a second AlInGaAs transition layer which are sequentially stacked in the first direction; wherein the first AlInGaAs transition layer and the second AlInGaAs transition layer are different in thickness and/or composition. The multijunction solar cell with the multiquantum well structure can take the first AlInGaAs transition layer and the second AlInGaAs transition layer as step potential wells, and takes buffer transition for energy band steps existing on an interface between the InGaAs potential well layer and the GaAsP potential barrier layer; in addition, the InGaAs well layer and the GaAsP barrier layer which are sequentially arranged can generate two different interfaces, and the atomic diffusion problem of the different interfaces is different, so that the energy bands of the interfaces between the InGaAs well layer and the GaAsP barrier layer can be further influenced due to the fact that the thicknesses and/or the components of the first AlInGaAs transition layer and the second AlInGaAs transition layer are different, the problem that the atomic diffusion of the different interfaces is different is better solved, and the photoelectric performance of the multi-junction solar cell with the multi-quantum well structure is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a multijunction solar cell having a multiple quantum well structure according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of another multijunction solar cell having a multiquantum well structure according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a multijunction solar cell having a multiquantum well structure according to another embodiment of the present invention;
fig. 4 is a schematic structural diagram of a multiple quantum well structure according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a multijunction solar cell having a multiquantum well structure according to another embodiment of the present invention;
fig. 6 is a schematic structural diagram of a multi-junction solar cell having a multi-quantum well structure according to an embodiment of the present invention;
fig. 7 is a schematic structural diagram of a multi-junction solar cell having a multi-quantum well structure according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In order to make the aforementioned objects, features and advantages of the present invention more comprehensible, the present invention is described in detail with reference to the accompanying drawings and the detailed description thereof.
An embodiment of the present invention provides a multijunction solar cell having a multiple quantum well structure, and referring to fig. 1, fig. 1 is a schematic structural diagram of a multijunction solar cell having a multiple quantum well structure according to an embodiment of the present invention, and with reference to fig. 1, the multijunction solar cell having a multiple quantum well structure includes:
a substrate 11; the first sub-cell 12, the second sub-cell 13 and the third sub-cell 14 are sequentially arranged on one side of the substrate 11 in a first direction a, the first direction a is perpendicular to a plane where the substrate 11 is located, and the substrate 11 points to the first sub-cell 12.
The second subcell 13 includes a multiple quantum well structure including multiple sets of first stacked film layers 131, the multiple sets of first stacked film layers 131 being sequentially stacked in the first direction a.
The first stacked film layer 131 includes an InGaAs well layer 1311, a first AlInGaAs transition layer 1312, a GaAsP barrier layer 1313, and a second AlInGaAs transition layer 1314 that are stacked in this order in the first direction a.
Wherein the first AlInGaAs transition layer 1312 and the second AlInGaAs transition layer 1314 are different in thickness and/or composition.
Specifically, in the embodiment of the present invention, in the first direction a, the first sub cell 12 is disposed on one side of the substrate 11, the second sub cell 13 is disposed on one side of the first sub cell 12 facing away from the substrate 11, and the third sub cell 14 is disposed on one side of the second sub cell 13 facing away from the substrate 11.
Wherein the second sub-cell 13 includes a multi-quantum well structure, as shown in fig. 1, the multi-quantum well structure includes N groups of first stacked film layers 131, and the N groups of the first stacked film layers 131 are sequentially stacked in the first direction a.
Specifically, in the embodiment of the present invention, the first stacked film layer 131 includes an InGaAs well layer 1311, a first AlInGaAs transition layer 1312, a GaAsP barrier layer 1313, and a second AlInGaAs transition layer 1314, which are stacked in this order in the first direction a.
Wherein the first AlInGaAs transition layer 1312 is the InGaAs well layer 1311 on a side facing the substrate 11, and the GaAsP barrier layer 1313 on a side facing away from the substrate 11; the GaAsP barrier layer 1313 is on the side of the second AlInGaAs transition layer 1314 facing the substrate 11, and the InGaAs well layer 1311 is on the side facing away from the substrate 11.
In addition, in the embodiment of the present invention, the thicknesses and compositions of the first AlInGaAs transition layer 1312 and the second AlInGaAs transition layer 1314 may be different, or may be different.
Compared with the prior art, the multi-junction solar cell with the multi-quantum well structure only comprises a GaAsP barrier layer and an InGaAs well layer in the prior art, the multi-quantum well structure not only comprises a GaAsP barrier layer 1313 and an InGaAs well layer 1311, but also comprises a first AlInGaAs transition layer 1312 and a second AlInGaAs transition layer 1314, and the thicknesses and/or compositions of the first AlInGaAs transition layer 1312 and the second AlInGaAs transition layer 1314 are different, the multi-junction solar cell with the multi-quantum well structure provided by the invention can take the first AlInGaAs transition layer 1312 and the second AlInGaAs transition layer 1314 as step wells and make buffer transition for energy band steps existing at an interface between the InGaAs well layer 1311 and the AsGaP barrier layer 1313; in addition, because the InGaAs well layer 1311 and the GaAsP barrier layer 1313 which are sequentially arranged may generate two different interfaces, and the atomic diffusion problem of the different interfaces also has a difference, the thickness and/or composition of the first AlInGaAs transition layer 1312 and the second AlInGaAs transition layer 1314 may further affect the energy band of the interface between the InGaAs well layer 1311 and the GaAsP barrier layer 1313, and the difference problem of atomic diffusion of the different interfaces may be better handled, so that the multi-junction solar cell with the multi-quantum well structure provided by the present invention may more effectively reduce the atomic diffusion problem of the different interfaces formed by the GaAsP barrier layer 1313 and the InGaAs layer 1311 compared to the prior art, and the multi-junction solar cell with the multi-quantum well structure provided by the present invention further has a more precise balance stress to reduce defect generation, and may finally significantly improve the photoelectric performance of the solar cell.
Optionally, in another embodiment of the present invention, the multi-junction solar cell with a multiple quantum well structure is further described, referring to fig. 2, fig. 2 is a schematic structural diagram of another multi-junction solar cell with a multiple quantum well structure according to an embodiment of the present invention, and the multi-junction solar cell with a multiple quantum well structure is described in detail with reference to fig. 2:
the substrate 11 is a p-type Ge substrate, and the first sub-cell 12 further includes:
and an n-type emitter region 121 located on the side of the p-type Ge substrate facing the second subcell 13.
A nucleation layer 122 on a side of the n-type emitter region 121 facing away from the p-type Ge substrate.
Specifically, in the embodiment of the present invention, the multi-junction solar cell having a multiple quantum well structure includes, but is not limited to, a forward triple-junction solar cell having a multiple quantum well structure, in the embodiment of the present invention, the forward triple-junction solar cell having a multiple quantum well structure is taken as an example for description, the substrate 11 is a p-type Ge substrate, and the embodiment of the present invention includes, but is not limited to, growing the forward triple-junction solar cell on the p-type Ge substrate by metal organic chemical vapor phase epitaxy deposition or molecular beam epitaxy. In addition, in the embodiment of the present invention, the p-type Ge substrate may be understood as a substrate of the first sub-cell 12, or may be understood as a substrate of the entire multi-junction solar cell.
Specifically, the n-type emitter region 121 is located on the side of the p-type Ge substrate facing the second subcell 13; the n-type emitter region 121 is obtained by phosphorus diffusion on the p-type Ge substrate, and the n-type emitter region 121 and the p-type Ge substrate constitute a pn junction of the first sub-cell 12.
A nucleation layer 122 is located on a side of the n-type emitter region 121 facing away from the p-type Ge substrate; the nucleation layer 122 is lattice matched to the p-type Ge substrate, and the nucleation layer 122 may also serve as a window layer for the first subcell 12; the material of the nucleation layer 122 may be GaInP material or AlGaInP material.
In the embodiment of the invention, phosphorus diffusion is performed on the p-type Ge substrate to obtain the n-type emitting region 121, and the pn junction of the first sub-cell 12 is formed, so that the electron mobility is greater than that of the hole, the conversion efficiency of the multi-junction solar cell is higher, and the photoelectric performance of the multi-junction solar cell is favorably improved. The nucleation layer 122 located on the n-type emitter region 121 on the side away from the p-type Ge substrate can also enhance the reflection capability of carriers, help to collect carriers, and further improve the photoelectric performance of the multi-junction solar cell.
Optionally, in another embodiment of the present invention, a structure of the second sub-cell 13 in the multi-junction solar cell with a multiple quantum well structure is described, referring to fig. 3, fig. 3 is a schematic structural diagram of another multi-junction solar cell with a multiple quantum well structure according to an embodiment of the present invention, and the structure of the second sub-cell 13 is described in detail with reference to fig. 3:
the second sub-battery 13 adopted in the embodiment of the present invention is an InGaAs sub-battery, and as shown in fig. 3, the second sub-battery 13 further includes:
in the first direction a, a first emitter region 132 and a first window layer 133 are sequentially disposed on a side of the multiple quantum well structure facing away from the substrate 11.
A first base region 134 located on a side of the multiple quantum well structure facing away from the first emitter region 132.
And a first back field layer 135 positioned on a side of the first base region 134 facing away from the multiple quantum well structure.
The material of the first back field layer 135 is GaInP material or AlGaAs material, and the material of the first window layer 133 is AlGaInP material or AlInP material.
Specifically, in the embodiment of the present invention, in the first direction a, the first emission region 132 is disposed on a side of the multiple quantum well structure facing away from the substrate 11, and the first window layer 133 is disposed on a side of the first emission region 132 facing away from the substrate 11.
In the second direction B, the first base region 134 is disposed on a side of the multiple quantum well structure facing away from the first emitter region 132, and the first back field layer 135 is disposed on a side of the first base region 134 facing away from the multiple quantum well structure; wherein the second direction B is opposite to the first direction a, the second direction B is perpendicular to the plane of the substrate 11, and is directed to the substrate 11 by the second sub-battery 13.
Specifically, the first base region 134 is a p-type doped InGaAs layer base region, the first emitter region 132 is an n-type doped GaInP layer emitter region, a PN junction is formed at an interface between the first emitter region 132 and the first base region 134, holes of the first base region 134 diffuse into the first emitter region 132, impurity ions doped with negative charges are left, electrons in the first emitter region 132 diffuse into the first base region 134, and impurity ions doped with positive charges are left, so that space charge regions are formed at two sides of the interface between the first emitter region 132 and the first base region 134, and a built-in electric field in the space charge regions is directed to the first base region 134 from the first emitter region 132, which is beneficial to improving the transport efficiency of carriers in the second cell 13 and improving the photoelectric performance of the multi-junction solar cell.
Optionally, in another embodiment of the present invention, a multiple quantum well structure in the multi-junction solar cell with a multiple quantum well structure is further described, referring to fig. 4, fig. 4 is a schematic structural diagram of a multiple quantum well structure provided in the embodiment of the present invention, and the multiple quantum well structure is described in detail with reference to fig. 4:
the value range of the periodicity of the multiple quantum well structure is 1-100.
Specifically, in the embodiment of the present invention, as shown in fig. 4, the multiple quantum well structure includes multiple sets of first stacked film layers 131, where one set of first stacked film layers 131 is a period, and the multiple quantum well structure of the period includes an InGaAs well layer 1311, a first AlInGaAs transition layer 1312, a GaAsP barrier layer 1313, and a second AlInGaAs transition layer 1314 that are sequentially stacked in the first direction a; the multiple quantum well structure shown in fig. 4 includes N groups of first stacked film layers 131 sequentially stacked in the first direction a, where N is a number of cycles of the multiple quantum well structure, and a value of the number of cycles is in a range of 1 to 100.
For example, if the number of periods of the multiple quantum well structure is 2, the quantum well structure includes an InGaAs well layer 1311, a first AlInGaAs transition layer 1312, a GaAsP barrier layer 1313, a second AlInGaAs transition layer 1314, an InGaAs well layer 1311, a first AlInGaAs transition layer 1312, a GaAsP barrier layer 1313, and a second AlInGaAs transition layer 1314, which are sequentially arranged in the first direction a.
The first AlInGaAs transition layer 1312 has a band gap between that of the InGaAs well layer 1311 and that of the GaAsP barrier layer 1313; the band gap of the second AlInGaAs transition layer 1314 is between the band gap of the InGaAs well layer 1311 and the GaAsP barrier layer 1314.
The InGaAs well layer 1311 is In x Ga 1-x The As potential well layer, x is greater than or equal to 0 and less than or equal to 0.3; said In x Ga 1-x The thickness of the As well layer is in the range of 1nm to 20nm.
Specifically, in the embodiments of the present invention, the In x Ga 1-x The thickness of the As well layer may take any value in the range of 1nm to 20nm, for example: said In x Ga 1-x The thickness of the As well layer may be 1nm, 5.5nm, 10nm, 16.7nm, 20nm, etc., and the In is x Ga 1-x The thickness of the As well layer may be determined according to the performance of the multijunction solar cell.
The GaAsP barrier layer 1313 is GaAs 1-y P y The value range of y is more than or equal to 0 and less than or equal to 0.5; the GaAs 1- y P y The barrier layer has a thickness in the range of 1nm to 20nm.
In particular, in the embodiment of the invention, the GaAs 1-y P y The thickness of the barrier layer may take any value in the range of 1nm to 20nm, for example: the GaAs 1-y P y The barrier layer may have a thickness of 1nm, 5nm, 9.5nm, 15.8nm, 20nm, etc., and the GaAs layer may be a layer of a material selected from the group consisting of GaAs, and GaAs 1-y P y The thickness of the barrier layer may be determined according to the performance of the multijunction solar cell.
The thickness of the first AlInGaAs transition layer 1312 is smaller than that of the second AlInGaAs transition layer 1314, the thickness of the first AlInGaAs transition layer 1312 ranges from 0.5nm to 3nm, and the thickness of the second AlInGaAs transition layer 1314 ranges from 1nm to 6nm.
Specifically, in the embodiment of the present invention, the thickness of the first AlInGaAs transition layer 1312 may be any value within a range from 0.5nm to 3nm, for example: the thickness of the first AlInGaAs transition layer 1312 may be 0.5nm, 1.2nm, 2nm, 2.6nm, 3nm, etc., and the thickness of the first AlInGaAs transition layer 1312 may be determined according to the performance of the multi-junction solar cell.
Specifically, in the embodiment of the present invention, the thickness of the second AlInGaAs transition layer 1314 may take any value within a range from 1nm to 6nm, for example: the thickness of the second AlInGaAs transition layer 1314 may be 1nm, 2.1nm, 3nm, 5.7nm, 6nm, etc., and the thickness of the second AlInGaAs transition layer 1314 may be determined according to the performance of the multi-junction solar cell.
Note that the thicknesses of the InGaAs well layer 1311, the first AlInGaAs transition layer 1312, the GaAsP barrier layer 1313, and the second AlInGaAs transition layer 1314 are all thicknesses in the first direction a.
In the embodiment of the invention, the multi-quantum well structure is adopted, so that the performance of the solar cell is improved by collecting photons; in addition, because the InGaAs well layer 1311 and the GaAsP barrier layer 1313 which are sequentially arranged have different thicknesses and/or compositions, two different interfaces are generated, and the problem of atomic diffusion of the different interfaces is also different, so that the difference in thickness and/or composition between the first AlInGaAs transition layer 1312 and the second AlInGaAs transition layer 1314 can further affect the energy band of the interface between the InGaAs well layer 1311 and the GaAsP barrier layer 1313, and the problem of the difference in atomic diffusion of the different interfaces can be better solved, thereby improving the photoelectric performance of the multijunction solar cell with a multiquantum well structure.
Optionally, in another embodiment of the present invention, the multi-junction solar cell with a multiple quantum well structure is further described, referring to fig. 5, fig. 5 is a schematic structural diagram of another multi-junction solar cell with a multiple quantum well structure according to an embodiment of the present invention, and with reference to fig. 5, the multi-junction solar cell further includes:
a first tunnel junction 15 between the first sub-cell 12 and the second sub-cell 13.
The first tunneling junction 15 includes a first N-type layer and a first P-type layer sequentially arranged in the first direction a.
Specifically, in the embodiment of the present invention, the first N-type layer is made of GaAs material or GaInP material, and the first P-type layer is made of GaAs material or AlGaAs material, where the first N-type layer and the first P-type layer are doped with Si and C, respectively.
A second tunnel junction 16 between the second subcell 13 and the third subcell 14.
The second tunneling junction 16 includes a second N-type layer and a second P-type layer sequentially disposed in the first direction a.
Specifically, in the embodiment of the present invention, the material of the second N-type layer is GaAs material or GaInP material, and the material of the second P-type layer is GaAs material or AlGaAs material, where the doping of the second N-type layer and the doping of the second P-type layer are Si doping and C doping, respectively.
It should be noted that the materials of the first N-type layer and the second N-type layer may be the same, for example: the first N-type layer and the second N-type layer may be both made of GaAs materials or GaInP materials. Similarly, the materials of the first P-type layer and the second P-type layer may be the same, for example: the first P-type layer and the second P-type layer can be made of GaAs materials or AlGaAs materials.
The materials of the first N-type layer and the second N-type layer may also be different, for example: the first N-type layer may be made of GaAs material, and the second N-type layer may be made of GaInP material, or the first N-type layer may be made of GaInP material, and the second N-type layer may be made of GaAs material. Similarly, the materials of the first P-type layer and the second P-type layer may also be different, for example: the material of the first P-type layer may be GaAs while the material of the second P-type layer is AlGaAs, or the material of the first P-type layer may be AlGaAs while the material of the second P-type layer is GaAs.
In the embodiment of the invention, the first tunneling junction 15 is adopted to connect the first sub-battery 12 and the second sub-battery 13, the second tunneling junction 16 is adopted to connect the second sub-battery 13 and the third sub-battery 14, and the tunneling junctions have good carrier transport efficiency and conductivity modulation effect, so that the high-efficiency transport of carriers in the multi-junction solar battery is facilitated, and the photoelectric effect of the multi-junction solar battery is improved.
Optionally, in another embodiment of the present invention, a structure of the third sub-cell 14 in the multi-junction solar cell with the multiple quantum well structure is further described, referring to fig. 6, fig. 6 is a schematic structural diagram of another multi-junction solar cell with the multiple quantum well structure according to an embodiment of the present invention, and the structure of the third sub-cell 14 in the multi-junction solar cell is described in detail with reference to fig. 6:
the third sub-cell 14 adopted in the embodiment of the present invention is a GaInP sub-cell or an AlGaInP sub-cell, as shown in fig. 6, the third sub-cell 14 further includes:
in the first direction a, a second back field layer 141, a second base region 142, a second emitter region 143, and a second window layer 144 are sequentially disposed on a side of the second sub-cell 13 facing away from the substrate 11.
Specifically, in the embodiment of the present invention, in the first direction a, the second back field layer 141 is disposed on a side of the second sub-cell 13 facing away from the substrate 11, the second base region 142 is disposed on a side of the second back field layer 141 facing away from the substrate 11, the second emitter region 143 is disposed on a side of the second base region 142 facing away from the substrate 11, and the second window layer 144 is disposed on a side of the second emitter region 143 facing away from the substrate 11.
The material of the second back field layer 141 is AlGaInP, and the material of the second window layer 144 is AlInP.
Specifically, the second base region 142 is a p-type doped AlGaInP layer or GaInP layer base region, the second emitter region 143 is an n-type doped AlGaInP layer or GaInP layer emitter region, a PN junction is formed at an interface between the second emitter region 143 and the second base region 142, holes of the second base region 142 are diffused toward the second emitter region 143, and doped impurity ions with negative charges remain, electrons in the second emitter region 143 are diffused toward the second base region 142, and doped impurity ions with positive charges remain, so that space charge regions are formed at two sides of the interface between the second emitter region 143 and the second base region 142, and a built-in electric field in the space charge regions is directed from the second emitter region 143 to the second base region 142, which is beneficial to improving the carrier transport efficiency in the third cell 14 and improving the photoelectric performance of the multi-junction solar cell.
Optionally, in another embodiment of the present invention, the multi-junction solar cell having a multiple quantum well structure is further described, referring to fig. 7, fig. 7 is a schematic structural diagram of another multi-junction solar cell having a multiple quantum well structure according to an embodiment of the present invention, and with reference to fig. 7, the multi-junction solar cell further includes:
an N-type contact layer 17 on the side of the third subcell 14 facing away from the substrate 11.
Specifically, the material of the N-type contact layer 17 provided in the embodiment of the present invention may be GaAs material or InGaAs material.
In the embodiment of the present invention, the finally grown N-type contact layer 17 on the side of the third sub-cell 14 away from the substrate 11 may be used as an ohmic contact layer formed with an electrode, which is beneficial to input and output of current, and further improves the performance of the multi-junction solar cell.
The multi-junction solar cell with a multi-quantum well structure provided by the present invention is described in detail above, and the principle and the embodiment of the present invention are explained in the present document by applying specific examples, and the description of the above examples is only used to help understanding the method of the present invention and the core idea thereof; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
It should be noted that, in the present specification, the embodiments are all described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments may be referred to each other. The device disclosed in the embodiment corresponds to the method disclosed in the embodiment, so that the description is simple, and the relevant points can be referred to the description of the method part.
It is further noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include or include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrases "comprising one of 8230; \8230;" 8230; "does not exclude the presence of additional like elements in a process, method, article, or apparatus that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (13)
1. A multijunction solar cell having a multiquantum well structure, the multijunction solar cell comprising:
a substrate;
the first sub-battery, the second sub-battery and the third sub-battery are sequentially arranged on one side of the substrate in a first direction, the first direction is perpendicular to the plane of the substrate, and the substrate points to the first sub-battery;
the second sub-battery comprises a multi-quantum well structure, the multi-quantum well structure comprises a plurality of groups of first stacked film layers, and the plurality of groups of first stacked film layers are sequentially stacked in the first direction;
the first stacked film layer comprises an InGaAs well layer, a first AlInGaAs transition layer, a GaAsP barrier layer and a second AlInGaAs transition layer which are sequentially stacked in the first direction;
wherein the first AlInGaAs transition layer and the second AlInGaAs transition layer are different in thickness and/or composition.
2. The multijunction solar cell of claim 1, wherein the second subcell is an InGaAs subcell, further comprising:
in the first direction, a first emission region and a first window layer are sequentially arranged on one side, away from the substrate, of the multiple quantum well structure;
the first base region is positioned on one side, away from the first emitting region, of the multi-quantum well structure;
and the first back field layer is positioned on one side of the first base region, which is deviated from the multiple quantum well structure.
3. The multijunction solar cell of claim 2, wherein the material of the first back-field layer is GaInP or AlGaAs material and the material of the first window layer is AlGaInP or AlInP material.
4. The multijunction solar cell of claim 1, wherein the number of periods of the multiquantum well structure ranges from 1 to 100.
5. The multijunction solar cell of claim 1, wherein the first AlInGaAs transition layer has a band gap between a band gap of the InGaAs well layer and a band gap of the GaAsP barrier layer; the second AlInGaAs transition layer has a band gap between a band gap of the InGaAs well layer and a band gap of the GaAsP barrier layer.
6. The multijunction solar cell In accordance with claim 1, wherein the InGaAs well layer is In x Ga 1-x The As potential well layer, x is greater than or equal to 0 and less than or equal to 0.3;
the GaAsP barrier layer is GaAs 1-y P y The value range of y is more than or equal to 0 and less than or equal to 0.5;
said In x Ga 1-x The thickness of the As potential well layer is in the range of 1nm-20nm, and the GaAs layer 1-y P y The thickness of the barrier layer is in the range of 1nm-20nm.
7. The multijunction solar cell of claim 1, wherein the first AlInGaAs transition layer has a thickness less than the second AlInGaAs transition layer, the first AlInGaAs transition layer has a thickness in a range of 0.5nm to 3nm, and the second AlInGaAs transition layer has a thickness in a range of 1nm to 6nm.
8. The multijunction solar cell of claim 1, wherein the substrate is a p-type Ge substrate, the first subcell further comprising:
the n-type emission region is positioned on one side, facing the second sub-battery, of the p-type Ge substrate;
and the nucleation layer is positioned on one side of the n-type emitter region, which faces away from the p-type Ge substrate.
9. The multijunction solar cell of claim 1, further comprising:
a first tunneling junction between the first subcell and the second subcell;
the first tunneling junction comprises a first N-type layer and a first P-type layer which are sequentially arranged in the first direction;
a second tunneling junction between the second subcell and the third subcell;
the second tunneling junction comprises a second N-type layer and a second P-type layer which are sequentially arranged in the first direction.
10. The multijunction solar cell of claim 9, wherein the first N-type layer is made of GaAs or GaInP, the first P-type layer is made of GaAs or AlGaAs, the second N-type layer is made of GaAs or GaInP, and the second P-type layer is made of GaAs or AlGaAs.
11. The multijunction solar cell of claim 1, wherein the third subcell is a GaInP subcell or an AlGaInP subcell, further comprising:
and in the first direction, a second back field layer, a second base region, a second emitter region and a second window layer are sequentially arranged on one side, away from the substrate, of the second sub-cell.
12. The multijunction solar cell of claim 11, wherein the material of the second back-field layer is an AlGaInP material and the material of the second window layer is an AlInP material.
13. The multijunction solar cell of claim 1, further comprising:
and the N-type contact layer is positioned on one side of the third sub-battery, which is far away from the substrate.
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| CN117393666A (en) * | 2023-12-12 | 2024-01-12 | 度亘核芯光电技术(苏州)有限公司 | Super-radiation light-emitting diode |
| CN117393666B (en) * | 2023-12-12 | 2024-03-22 | 度亘核芯光电技术(苏州)有限公司 | Super-radiation light-emitting diode |
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