CN201311936Y - Triple-junction solar cell with reflector - Google Patents
Triple-junction solar cell with reflector Download PDFInfo
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- CN201311936Y CN201311936Y CNU2008201460820U CN200820146082U CN201311936Y CN 201311936 Y CN201311936 Y CN 201311936Y CN U2008201460820 U CNU2008201460820 U CN U2008201460820U CN 200820146082 U CN200820146082 U CN 200820146082U CN 201311936 Y CN201311936 Y CN 201311936Y
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- battery
- reflector
- junction solar
- algaas
- algainp
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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Abstract
The utility model discloses a triple-junction solar cell with a reflector, which is characterized by growing and forming a semiconductor material layer of the triple-junction cell containing two distributed Bragg reflectors on a P-Ge substrate, wherein the two distributed bragg reflectors include one AlInP/AlGaInP top cell reflector for reflecting shortwave photons and an AlAs/AlGaAs intermediate cell reflector for reflecting medium wave photons. The structure of the triple-junction solar cell with reflectors can reduce thickness of the cell, decrease free path of non equilibrium carriers and increase photoelectric conversion efficiency.
Description
Technical field
The utility model belongs to technical field of semiconductors, relates to the structure of the three-junction solar battery that is applied to space and ground.
Background technology
Solar energy is a kind of of new forms of energy and regenerative resource, has special advantages and huge development and use potentiality, and this point has obtained people and fully realized.Directly solar radiant energy is converted to electric energy by conversion equipment, photoelectric conversion device normally utilizes the photovoltaic effect principle of semiconductor device to carry out opto-electronic conversion, and solar-photovoltaic technology is develop rapidly.
In recent years, be the photoelectric conversion technique fast development of representative with the photovoltaic technology, new technology constantly occurs, and battery efficiency improves constantly.The photronic research of many knot laminations is exciting especially, GaInP/Ga under the optically focused condition (In) As/Ge[gallium indium phosphorus/gallium (indium) arsenic/germanium] the laboratory transformation efficiency of multijunction photocell broken through 40%, and high efficiency battery is subjected to extensive attention.Along with the development of space science technology, the power requirement of spacecraft is also more and more higher.Especially the development of microsatellite and long-life satellite after the age is had higher requirement to the conversion efficiency and the capability of resistance to radiation of solar cell.Because multijunction solar cell has high conversion efficiency, can satisfy the develop rapidly that use in the space, become the focus of solar cell research in recent years.
Nineteen ninety, develop AM (airmass, air quality are defined as 1/cos φ, and φ is the angle of sunray and normal) 1.5 efficient and be the binode photocell of 27.3% GaInP/GaAs/Ge (gallium indium phosphorus/GaAs/germanium).Through the further improvement to battery structure and grid line, 1994, efficient was brought up to 29.5% (AM1.5) again.1997, adopt the GaInP tunnel junction structure, the photronic AM1.5 efficient of GaInP/GaAs/Ge binode brings up to 30.28%.1998, develop efficient and be 33.3% entire cascaded three knot GaInP/GaAs/Ge photocells.People have also designed the lamination photocell of 4 knots and 5 knots theoretically in addition, have provided theoretical efficiency, expectation efficient and the conventional efficient of multijunction photocell, but through making slow progress closely for many years.Cause this result's a major reason to be, in order fully to absorb sunlight, the thick partially free path of non equilibrium carrier that caused of the material thickness of battery strengthens, and has seriously reduced battery efficiency.And the adjustment of band gap has also brought not matching of lattice constant, and the existence of internal stress makes the reliability decrease of this battery.
In view of this, the inventor utilizes growth two cover Bragg reflecting layers (DBR) in solar cell material, uses by increasing the method for light absorption, reduce the growth thickness of battery, reduce the free path of non equilibrium carrier, improve photoelectric conversion efficiency well, this case produces thus.
The utility model content
The purpose of this utility model is to propose a kind of three-junction solar battery with reflector, to reduce the thickness of battery, reduces the free path of non equilibrium carrier, improves photoelectric conversion efficiency.
To achieve these goals, solution of the present utility model is:
A kind of three-junction solar battery with reflector, growth forms the semiconductor material layer of the three-junction solar battery that comprises two cover Bragg reflecting layers (DBR) on the P-Ge substrate; Two cover Bragg reflecting layers (DBR) are that a cover is used for reflecting the aluminium indium phosphorus AlInP/ AlGaInP battery reflector, AlGaInP top of shortwave photon and the aluminium arsenide AlAs/ gallium aluminium arsenic AlGaAs battery reflector that a cover is used to reflect the medium wave photon.
Described three-junction solar battery be adopt the organic gaseous phase deposition technology of metal on the P-Ge substrate, grow at the bottom of battery Window layer at the bottom of battery emitter region at the bottom of battery base at the bottom of the P-Ge, the N-Ge, the N-GaInP, the N-GaAs in regular turn in battery resilient coating, P
++-GaAs/N
++Battery Window layer, P among battery emitter region, N-Al (Ga) InP or the N-GaInP among battery base, the N-InGaAs among battery BSF (back of the body electric field), the P--InGaAs among battery reflector, the P-AlGaAs among battery tunnel junctions, the P-AlAs/AlGaAs at the bottom of-the GaAs
++-AlGaAs/N
++Top battery tunnel junctions, battery reflector, P-AlInP/AlGaInP top, P-AlGaInP top battery BSF, P among the-GaInP
--(Al) GaInP top battery base, battery emitter region, N-(Al) GaInP top, N-AlInP top battery Window layer, N-GaAs cap layer, N
++-GaAs contact layer.
The reflection wavelength in battery reflector, described AlInP/AlGaInP top is 380～500nm (nanometer).
The reflection wavelength in battery reflector is 600～880nm (nanometer) among the described AlAs/AlGaAs DBR.
Battery reflector, described AlInP/AlGaInP top is 2 pairs-10 pairs.The battery reflector is 15 pairs-25 pairs among the AlAs/AlGaAs.Logarithm has lacked and has not had reflex, and resistance in many can the increasing influence fill factor, curve factor, thereby lowers efficiency, and therefore must be optimized, and obtains the logarithm of the best.
After adopting such scheme, the utility model is because increase by two cover Bragg reflecting layers (DBR) in three-junction solar battery, one cover is used to reflect the battery reflector, top of shortwave photon, improve the absorption efficiency of top battery, a cover is used for reflecting the battery reflector of medium wave photon, the absorption efficiency of battery in the raising, so, this structure can reduce the thickness of top cell thickness and middle battery, thereby reduces the free path of non equilibrium carrier greatly, improves conversion efficiency.
On the other hand, the material that two cover Bragg reflecting layers (DBR) adopt is respectively AlInP/AlGaInP and AlAs/AlGaAs, the AlInP/AlGaInP energy gap that adopt in battery reflector, top is greater than the energy gap of top battery, can reduce of the absorption of battery reflector, top greatly to short wavelength light, battery reflector, this top and top battery are with a series of materials simultaneously, help the growth of material, the AlAs/AlGaAs energy gap that adopt in middle battery reflector is greater than the energy gap of middle battery, the absorption of the battery reflector centering glistening light of waves in can reducing greatly, battery reflector and middle battery are with a series of materials in simultaneously this, help the growth of material equally.
Description of drawings
Fig. 1 is a structural representation of the present utility model.
Embodiment
As shown in Figure 1, be a kind of three-junction solar battery that the utility model discloses with reflector.Growth forms the semiconductor material layer of the three-junction solar battery (end battery, middle battery and top battery) that comprises two cover Bragg reflecting layers (DBR) on the P-Ge substrate.Two cover Bragg reflecting layers (DBR) are that a cover is used for reflecting the battery reflector, aluminium indium phosphorus AlInP/ AlGaInP AlGaInP top 20 of shortwave photon and the aluminium arsenide AlAs/ gallium aluminium arsenic AlGaAs battery reflector 14 that a cover is used to reflect the medium wave photon.
Concrete structure and manufacturing are as follows, and each growth all is to utilize the organic gaseous phase deposition MOCVD of metal technology.
On the P-Ge substrate, under 500～700 ℃, carry out P diffusion, form at the bottom of the P-Ge battery emitter region 10 at the bottom of battery base/N-Ge.
Owing to, adopt N-GaInP as end battery Window layer 11 with the P diffusion.Purpose is to reduce recombination losses, and adopts material to be beneficial to the light transmission that end battery is absorbed.
Further deposition N-GaAs Buffer at the bottom of in battery resilient coating 12, P grows on the battery resilient coating 12 at the bottom of the N-GaAs
++-GaAs/N
++ Battery tunnel junctions 13 at the bottom of-the GaAs.Described tunnel junctions effect is that end battery and middle battery are coupled together.
Then grow 15-25 to battery reflector 14 in the P-AlAs/AlGaAs conduct.Its effect is the light that battery will absorb in the reflection.The reflection wavelength in battery reflector 14 is regulated by the thickness of regulating AlAs/AlGaAs among the AlAs/AlGaAs, and reflected wavelength range is regulated by the Al component of AlGaAs, and the range regulation of reflection wavelength is arrived 600-880nm.
And battery Window layer 18 in N-InGaAs, grow on the battery emitter region 17 N-Al (Ga) InP or the N-GaInP conduct.Purpose is to reduce recombination losses, and adopts material to be beneficial to the light transmission that middle battery is absorbed.
P grows on middle battery Window layer 18
++-AlGaAs/N
++Top battery tunnel junctions 19 among the-GaInP.Battery tunnel junctions 19 effects in top are that middle battery and top battery are coupled together in described.
Further growth 2-10 to P-AlInP/AlGaInP as battery reflector, top 20.Its effect is the light that reflection top battery will absorb.The reflection wavelength in battery reflector, P-AlInP/AlGaInP top 20 is by regulating the thickness adjusted of AlInP/AlGaInP, and reflected wavelength range is regulated by Al and the Ga ratio of component of AlGaInP, and the range regulation of reflection wavelength is arrived 380-500nm.
P-AlGaInP top battery BSF 21 then grows on battery reflector, top 20.Effect is to reduce recombination losses.
P grows on P-AlGaInP top battery BSF 21
--(Al) GaInP top battery base 22 and battery emitter region, N-(Al) GaInP top 23.
Growth N-Al InP top battery Window layer 24 on battery emitter region, N-(Al) GaInP top 23.Purpose is to reduce recombination losses, and adopts material to be beneficial to the light transmission that the top battery is absorbed.
Growth N-GaAs cap layer (Cap layer) 25 and N on N-AlInP top battery Window layer 24
++-GaAs contact layer 26.
So far, form the three-junction solar battery with reflector of the present utility model.
Claims (6)
1, have the three-junction solar battery in reflector, it is characterized in that: growth forms the semiconductor material layer of the three-junction solar battery that comprises two cover Bragg reflecting layers on the P-Ge substrate; Two cover Bragg reflecting layers are that a cover is used for reflecting the aluminium indium phosphorus AlInP/ AlGaInP battery reflector, AlGaInP top of shortwave photon and the aluminium arsenide AlAs/ gallium aluminium arsenic AlGaAs battery reflector that a cover is used to reflect the medium wave photon.
2, according to the described three-junction solar battery of claim 1, it is characterized in that with reflector: described three-junction solar battery be adopt the organic gaseous phase deposition technology of metal on the P-Ge substrate, grow at the bottom of battery Window layer at the bottom of battery emitter region at the bottom of battery base at the bottom of the P-Ge, the N-Ge, the N-GaInP, the N-GaAs in regular turn in battery resilient coating, P
++-GaAs/N
++Battery back electric field, P among battery reflector, the P-AlGaAs among battery tunnel junctions, the P-AlAs/AlGaAs at the bottom of-the GaAs
-Battery Window layer, P among battery emitter region, N-Al (Ga) InP or the N-GaInP among battery base, the N-InGaAs among-the InGaAs
++-AlGaAs/N
++Top battery tunnel junctions, battery reflector, P-AlInP/AlGaInP top, P-AlGaInP top battery back electric field, P among the-GaInP
--(Al) GaInP top battery base, battery emitter region, N-(Al) GaInP top, N-AlInP top battery Window layer, N-GaAs cap layer, N
++-GaAs contact layer.
3, according to the described three-junction solar battery with reflector of claim 2, it is characterized in that: the reflection wavelength in battery reflector, described AlInP/AlGaInP top is 380～500nm.
4, according to the described three-junction solar battery with reflector of claim 2, it is characterized in that: the reflection wavelength in battery reflector is 600～880nm among the described AlAs/AlGaAs.
5, according to the described three-junction solar battery with reflector of claim 2, it is characterized in that: battery reflector, described AlInP/AlGaInP top is 2 pairs-10 pairs.
6, according to the described three-junction solar battery with reflector of claim 2, it is characterized in that: the battery reflector is 15 pairs-25 pairs among the described AlAs/AlGaAs.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008201460820U CN201311936Y (en) | 2008-10-27 | 2008-10-27 | Triple-junction solar cell with reflector |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008201460820U CN201311936Y (en) | 2008-10-27 | 2008-10-27 | Triple-junction solar cell with reflector |
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| CN201311936Y true CN201311936Y (en) | 2009-09-16 |
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| CNU2008201460820U Expired - Lifetime CN201311936Y (en) | 2008-10-27 | 2008-10-27 | Triple-junction solar cell with reflector |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104300015A (en) * | 2014-10-13 | 2015-01-21 | 北京工业大学 | AlGaAs/GaInAs/Ge continuous spectrum solar battery |
| CN104659140A (en) * | 2015-03-06 | 2015-05-27 | 天津三安光电有限公司 | Multijunction solar cell |
| CN108198891A (en) * | 2018-01-03 | 2018-06-22 | 厦门乾照光电股份有限公司 | Solar cell and preparation method thereof |
-
2008
- 2008-10-27 CN CNU2008201460820U patent/CN201311936Y/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104300015A (en) * | 2014-10-13 | 2015-01-21 | 北京工业大学 | AlGaAs/GaInAs/Ge continuous spectrum solar battery |
| CN104659140A (en) * | 2015-03-06 | 2015-05-27 | 天津三安光电有限公司 | Multijunction solar cell |
| CN104659140B (en) * | 2015-03-06 | 2017-03-01 | 天津三安光电有限公司 | A kind of multijunction solar cell |
| CN108198891A (en) * | 2018-01-03 | 2018-06-22 | 厦门乾照光电股份有限公司 | Solar cell and preparation method thereof |
| CN108198891B (en) * | 2018-01-03 | 2019-05-10 | 厦门乾照光电股份有限公司 | Solar battery and preparation method thereof |
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|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20090916 |
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| CX01 | Expiry of patent term |