CN107527967A - A kind of high-efficiency three-joint cascade gallium arsenide solar cell and its manufacture method with Flouride-resistani acid phesphatase structure - Google Patents

A kind of high-efficiency three-joint cascade gallium arsenide solar cell and its manufacture method with Flouride-resistani acid phesphatase structure Download PDF

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CN107527967A
CN107527967A CN201710725701.5A CN201710725701A CN107527967A CN 107527967 A CN107527967 A CN 107527967A CN 201710725701 A CN201710725701 A CN 201710725701A CN 107527967 A CN107527967 A CN 107527967A
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张银桥
潘彬
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Nanchang Kaixun Photoelectric Co Ltd
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    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
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Abstract

The invention discloses a kind of high-efficiency three-joint with Flouride-resistani acid phesphatase structure to cascade gallium arsenide solar cell, including p-type contact layer, bottom battery, the first tunnel junctions, DBR1, middle battery, the second tunnel junctions, DBR2, top battery and N-type contact layer.The invention also discloses the preparation method that the high-efficiency three-joint of above-mentioned Flouride-resistani acid phesphatase structure cascades gallium arsenide solar cell.Battery uses InxGa1 xAs materials in the present invention, 1.1~1.4eV of energy gap, top battery uses GayIn1 yP materials, energy gap is 1.6~1.9eV, stress and filtering dislocation are discharged in the form of DBR1 and DBR2, effectively solve the warpage situation of epitaxial wafer and improve the thickness of epitaxial growth and the uniformity of doping, improve the yield rate and performance of solar cell；On the other hand, due to the interim form using DBR1 and DBR2, absorption of the battery to sunshine can be improved, improves anti-radiation performance.

Description

A kind of high-efficiency three-joint cascade gallium arsenide solar cell and its system with Flouride-resistani acid phesphatase structure Make method
Technical field
The invention belongs to high performance solar batteries technical field, and in particular to a kind of high-efficiency three-joint with Flouride-resistani acid phesphatase structure Gallium arsenide solar cell is cascaded, the invention further relates to the manufacture method of the solar cell.
Background technology
With the continuous progress of Space Science and Technology, the function of spacecraft becomes increasingly complex, the requirement to power source loads power More and more higher, higher requirement certainly will be proposed to the performance of solar cell, especially photoelectric transformation efficiency.And GaAs (GaAs) three-junction solar battery with advantages such as its higher conversion efficiency, long-life and excellent reliabilities in space field It is used widely, turns into the main power source of spacecraft.The GaAs three-junction solar battery knots for the Ge substrate growths applied at present Structure is GaInP/GaAs/Ge, is the battery structure of Lattice Matching, its peak efficiency is close to 30% (AM0), due to by band gap Unmatched limitation, conversion efficiency are difficult further to improve.By contrast, the GaAs three-junction solar batteries of band-gap can have Effect reduces wastes problem because band gap mismatches the solar energy brought, is further improving three-junction solar battery conversion efficiency side Mask has a clear superiority, the structure using with the unmatched middle top battery of substrate, for obtain crystal mass it is high middle top electricity Pond, Normal practice are to use various cushions, discharge the stress brought by lattice mismatch and dislocation, though such way The available crystalline material of solar cell can so be obtained, but remain larger stress, making to chip and after Continuous installation all brings great inconvenience, while reduces the yield rate of product, increases product cost.
The content of the invention
It is an object of the invention to overcome the deficiencies of the prior art and provide it is a kind of it is rational in infrastructure, technique is simple, performance can Lean on, a kind of high-efficiency three-joint cascade gallium arsenide solar cell of the low Flouride-resistani acid phesphatase structure of production cost.
Technical scheme is as follows：
A kind of high-efficiency three-joint cascade gallium arsenide solar cell with Flouride-resistani acid phesphatase structure, it is characterised in that connect including P types Contact layer, bottom battery, the first tunnel junctions, there is the DBR1 (the first distribution type Bragg reflector) of strain structure, middle battery, the Two tunnel junctions, the DBR2 (the second distribution type Bragg reflector) with strain structure, top battery and N-type contact layer；
The bottom battery, middle battery and top battery are three knot batteries, are arranged in order from the bottom to top；
Connected between the bottom battery and middle battery by the first tunnel junctions；
DBR1 is additionally provided between first tunnel junctions and the middle battery；
Connected between the middle battery and the top battery by the second tunnel junctions；
DBR2 is additionally provided between second tunnel junctions and the top battery；
The bottom battery lower floor is additionally provided with p-type contact layer, and the p-type contact layer is p-type Ge substrates；
The upper strata of the top battery is additionally provided with N-type contact layer, and the N-type contact layer is the GaAs Window layers of GaAs materials.
As optimization, the bottom battery includes P-Ge bases, N-Ge launch sites and GaInP nucleating layers successively from the bottom to top； Pass through PH in p-type contact layer surface3N-Ge launch sites and GaInP nucleating layers are diffuseed to form, the P-Ge bases connect for p-type Contact layer and the transition region of N-Ge launch sites, base of the P-Ge bases as bottom battery；The μ of N-Ge launch sites thickness 0.1~0.3 M, 0.03~0.10 μm of the GaInP nucleating layers thickness；The bottom battery energy gap is 0.67eV；
As optimization, first tunnelling becomes N++GaAs/P++GaAs, wherein, N++GaAs layers and P++GaAs thickness degree At 0.01~0.04 μm, N++GaAs dopant is that Te, Se, Si one or more therein combine, doping concentration 3 × 1018~1 × 1019/cm3；P++GaAs dopant is Mg, Zn, C one or more kinds of combinations therein, and doping concentration requires 2 ×1019~5 × 1019/cm3；
As optimization, InGaAs cushions, the InGaAs cushions are provided between first tunnel junctions and bottom battery Thickness is 0.5~1.5 μm；
As optimization, the DBR1 (the first distributed Bragg reflector) is by 10~30 pairs of InAlAs/InGaAs structures Composition, wherein, in adjacent each pair InAlAs/InGaAs structures, the increase of In molar constituents staged, gradient are in InGaAs 1%~3%, initial In molar constituents are In molar constituents staged increase in 1%, InAlAs, and gradient is 1%~3%, initially In molar constituents are 0.5%；In each pair InAlAs/InGaAs structures, InAlAs structures, the thickness of InGaAs structures are according to λ/4n Calculate, wherein 850nm≤λ≤1200nm, n are the refractive index of corresponding A lGaAs or InGaAs material；
As optimization, the middle battery includes InAlAs back ofs the body electric field, In successively from the bottom to topxGa1-xAs bases, InxGa1- xAs launch sites, AlInP or GaInP Window layers composition, wherein InxGa1-xAs bases and InxGa1-xIn component in As launch sites X scope is 0.01≤x≤0.22；The middle battery energy gap is 1.1~1.4eV, is absorbed more too beneficial to middle battery Sunlight, the current density of battery in raising；The thickness of InxGa1-xAs bases is 1.5~2.5 μm, InxGa1-xAs launch sites Thickness is 0.1~0.2 μm, AlInP or GaInP window layer thickness is 0.05~0.15 μm；AlInP or GaInP Window layers are AlInP Window layers or GaInP Window layers；
As optimization, the second described tunnelling becomes N++GaInP/P++AlGaAs, wherein, N++GaInP layers and P++ The thickness of AlGaAs layers is 0.01~0.04 μm, N++GaInP dopant is one or more kinds of groups therein of Te, Se, Si Close, doping concentration 3 × 1018~1 × 1019/cm3；P++AlGaAs dopant is one or more kinds of groups therein of Mg, Zn, C Close, doping concentration requirement 2 × 1019~5 × 1019/cm3；
As optimization, the DBR2 (the second distributed Bragg reflector) is by 10~30 pairs of AlInP/AlGaInP structures Composition, wherein, wherein, first pair of AlInP/AlGaInP structure is consistent with middle battery lattice lattice constant match, adjacent afterwards The In molar constituents of each pair AlInP/AlGaInP structure structures are reduced according to staged, and In molar constituents gradient is in AlInP In molar constituents gradient is 1%~3% in 1%~3%, AlGaInP；In each pair AlInP/AlGaInP structures, AlInP structures, The thickness of AlGaInP structures calculates according to λ/4n, and wherein 650nm≤λ≤800nm, n are corresponding A lInP or AlGaInP material Refractive index；
As optimization, the top battery includes AlGaInP back ofs the body electric field, Ga successively from the bottom to topyIn1-yP bases, GayIn1- yP launch sites and AlInP Window layers, wherein GayIn1-yP bases and GayIn1-yGa component y scope is 0.30 in P launch sites ≤ y≤0.50, the top battery energy gap are 1.6~1.9eV, and AlGaInP back of the body electric field thickness is 0.02~0.15 μm, GayIn1-yP bases and GayIn1-yThe gross thickness of P launch sites is 0.5~1 μm, 0.03~0.05 μm of AlInP window layer thickness, is had More sunshines are absorbed beneficial to top battery, improve the current density of top battery；
As optimization, the p-type contact layer is p-type Ge substrate, and dopant Ga, doping concentration is 1 × 1018~10 ×1018/cm3；
As optimization, the N-type contact layer is the GaAs Window layers of GaAs materials, and growth thickness is 0.3~0.6 μm, is mixed Miscellaneous dose is Te, and Se, Si one or more kinds of combinations therein, doping concentration is 3 × 1018~9 × 1018/cm3。
Present invention additionally comprises the preparation method that the high-efficiency three-joint of above-mentioned Flouride-resistani acid phesphatase structure cascades gallium arsenide solar cell, and it is walked Suddenly it is,
(1) bottom battery is prepared：Bottom battery includes P-Ge bases, N-Ge launch sites and GaInP nucleation successively from the bottom to top Layer；Pass through PH in p-type contact layer surface3N-Ge launch sites and GaInP nucleating layers are diffuseed to form, the P-Ge bases connect for p-type Contact layer and the transition region of N-Ge launch sites, base of the P-Ge bases as bottom battery；The μ of N-Ge launch sites thickness 0.1~0.3 M, 0.03~0.10 μm of the GaInP nucleating layers thickness；The bottom battery energy gap is 0.67eV；The p-type contact layer is P-type Ge substrate, dopant Ga, doping concentration is 1 × 1018~10 × 1018/cm3；
(2) the first tunnel junctions are prepared：In the tunnel junctions of superficial growth first of the InGaAs cushions, first tunnelling Become N++GaAs/P++GaAs, wherein, N++GaAs layers and P++GaAs thickness degree is at 0.01~0.04 μm, N++GaAs doping Agent is that Te, Se, Si one or more therein combine, doping concentration 3 × 1018~1 × 1019/cm3；P++GaAs dopant For Mg, Zn, C one or more kinds of combinations therein, doping concentration requirement 2 × 1019~5 × 1019/cm3；
(3) DBR1 is prepared：In the superficial growth DBR1 of first tunnel junctions, the DBR1 (has the of strain structure One distributed Bragg reflector) by 10~30 pairs of InAlAs/InGaAs structure compositions, wherein, adjacent each pair InAlAs/ In InGaAs structures, In molar constituents staged increase in InGaAs, gradient is 1%~3%, and initial In molar constituents are 1%, In molar constituents staged increase in InAlAs, gradient are 1%~3%, and initial In molar constituents are 0.5%；Each pair InAlAs/ In InGaAs structures, InAlAs structures, the thickness of InGaAs structures calculate according to λ/4n, wherein 850nm≤λ≤1200nm, n For the refractive index of corresponding A lGaAs or InGaAs material；
(4) battery in preparing：The battery in the superficial growth of the DBR1, the middle battery include successively from the bottom to top InAlAs back ofs the body electric field, InxGa1-xAs bases, InxGa1-xAs launch sites, AlInP or GaInP Window layers composition, wherein InxGa1- xAs bases and InxGa1-xIn component x scope is 0.01≤x≤0.22 in As launch sites；The middle battery energy gap is 1.1~1.4eV, absorb more sunshines, the current density of battery in raising beneficial to middle battery；The thickness of InxGa1-xAs bases Spend for 1.5~2.5 μm, the thickness of InxGa1-xAs launch sites is 0.1~0.2 μm, AlInP or GaInP window layer thickness is 0.05~0.15 μm；AlInP or GaInP Window layers are AlInP Window layers or GaInP Window layers；
(5) the second tunnel junctions are prepared：In the tunnel junctions of superficial growth second of the middle battery, second tunnelling becomes N++ GaInP/P++AlGaAs, wherein, N++GaInP layers and P++The thickness of AlGaAs layers is 0.01~0.04 μm, N++GaInP's mixes Miscellaneous dose is that Te, Se, Si one or more therein combine, doping concentration 3 × 1018~1 × 1019/cm3；P++AlGaAs's Dopant is Mg, Zn, C one or more kinds of combinations therein, and doping concentration requires 2 × 1019~5 × 1019/cm3；
(6) DBR2 is prepared：In the superficial growth DBR2 of second tunnel junctions, the DBR2 (has the of strain structure Two distributed Bragg reflectors) by 10~30 pairs of AlInP/AlGaInP structure compositions, wherein, first couple of AlInP/AlGaInP Structure is consistent with middle battery lattice lattice constant match, In moles of each pair AlInP/AlGaInP structure structures adjacent afterwards Component is reduced according to staged, and In molar constituents gradient is that In molar constituent gradients are in 1%~3%, AlGaInP in AlInP 1%~3%；In each pair AlInP/AlGaInP structures, AlInP structures, the thickness of AlGaInP structures calculate according to λ/4n, its Middle 650nm≤λ≤800nm, n are the refractive index of corresponding A lInP or AlGaInP material；
(7) top battery is prepared：In the superficial growth top battery of the DBR2, the top battery includes successively from the bottom to top AlGaInP back ofs the body electric field, GayIn1-yP bases, GayIn1-yP launch sites and AlInP Window layers, wherein GayIn1-yP bases and GayIn1-yGa component y scope is 0.30≤y≤0.50 in P launch sites, the top battery energy gap is 1.6~ 1.9eV, AlGaInP back of the body electric field thickness are 0.02~0.15 μm, GayIn1-yP bases and GayIn1-yThe gross thickness of P launch sites is 0.5~1 μm, 0.03~0.05 μm of AlInP window layer thickness, be advantageous to push up the more sunshines of battery absorption, improve top battery Current density；
(8) N-type contact layer is prepared：In the superficial growth N-type contact layer of the top battery, the N-type contact layer is GaAs The GaAs Window layers of material, growth thickness are 0.3~0.6 μm, one or more kinds of groups therein of dopant Te, Se, Si Close, doping concentration is 3 × 1018~9 × 1018/cm3。
As optimization, step (1) prepares InGaAs cushions afterwards：Buffered in the superficial growth InGaAs of the bottom battery Layer, the InGaAs buffer layer thicknesses are 0.5~1.5 μm.
Battery of the present invention includes p-type contact layer and passes through PH3The bottom battery diffuseed to form, the first tunnel junctions, DBR1 (tools Have first group of Bragg reflector of strain structure), middle battery, the second tunnel junctions, DBR2 (second group of cloth with strain structure Bragg reflector), push up battery and N-type contact layer.In the present invention, middle battery uses InxGa1-xAs materials, energy gap 1.1 ~1.4eV, top battery use GayIn1-yP materials, and energy gap is 1.6~1.9eV, is discharged in the form of DBR1 and DBR2 Stress and filtering dislocation, can greatly improve the incomplete problem of stress release that traditional direct growth cushion is brought, have Effect solves the warpage situation of epitaxial wafer, while improves the thickness of epitaxial growth and the uniformity of doping, improve solar cell into Product rate and performance.On the other hand, due to the interim form using DBR1 and DBR2, absorption of the battery to sunshine can be improved, Improve anti-radiation performance.
Brief description of the drawings
The structural representation of Fig. 1 gallium arsenide solar cells of the present invention
Embodiment
It is embodiment below, it is intended to which the present invention will be further described, and the present invention can have many different forms, should Embodiment is merely illustrative, and should not be construed as limited to embodiments set forth herein.
Embodiment 1
It is a kind of with Flouride-resistani acid phesphatase structure high-efficiency three-joint cascade gallium arsenide solar cell, including p-type contact layer, bottom battery, First tunnel junctions, the DBR1 (the first distribution type Bragg reflector) with strain structure, middle battery, the second tunnel junctions, tool There are the DBR2 (the second distribution type Bragg reflector), top battery and N-type contact layer of strain structure；
The bottom battery, middle battery and top battery are three knot batteries, are arranged in order from the bottom to top；
The bottom battery includes P-Ge bases, N-Ge launch sites and GaInP nucleating layers successively from the bottom to top；In the p-type Contact layer surface passes through PH3N-Ge launch sites and GaInP nucleating layers are diffuseed to form, the P-Ge bases are p-type contact layer and N- The transition region of Ge launch sites, base of the P-Ge bases as bottom battery；0.1~0.3 μm of N-Ge launch sites thickness, it is described 0.03~0.10 μm of GaInP nucleating layers thickness；The bottom battery energy gap is 0.67eV；
Connected between the bottom battery and middle battery by the first tunnel junctions；
InGaAs cushions are provided between first tunnel junctions and bottom battery, the InGaAs buffer layer thicknesses are 0.5 ~1.5 μm；
First tunnelling becomes N++GaAs/P++GaAs, wherein, N++GaAs layers and P++GaAs thickness degree 0.01~ 0.04 μm, N++GaAs dopant is that Te, Se, Si one or more therein combine, doping concentration 3 × 1018~1 × 1019/cm3；P++GaAs dopant is Mg, Zn, C one or more kinds of combinations therein, and doping concentration requires 2 × 1019~5 ×1019/cm3；
DBR1 is additionally provided between first tunnel junctions and the middle battery；
The DBR1 (the first distributed Bragg reflector) by 10~30 pairs of InAlAs/InGaAs structure compositions, wherein, In adjacent each pair InAlAs/InGaAs structures, In molar constituents staged increase in InGaAs, gradient is 1%~3%, just Beginning In molar constituent is In molar constituents staged increase in 1%, InAlAs, and gradient is 1%~3%, initial In molar constituents For 0.5%；In each pair InAlAs/InGaAs structures, InAlAs structures, the thickness of InGaAs structures calculate according to λ/4n, wherein 850nm≤λ≤1200nm, n are the refractive index of corresponding A lGaAs or InGaAs material；
The middle battery includes InAlAs back ofs the body electric field, In successively from the bottom to topxGa1-xAs bases, InxGa1-xAs launch sites, AlInP or GaInP Window layers form, wherein InxGa1-xAs bases and InxGa1-xIn component x scope is in As launch sites 0.01≤x≤0.22；The middle battery energy gap is 1.1~1.4eV, absorbs more sunshines beneficial to middle battery, improves The current density of middle battery；The thickness of InxGa1-xAs bases is 1.5~2.5 μm, and the thickness of InxGa1-xAs launch sites is 0.1 ~0.2 μm, AlInP or GaInP window layer thickness is 0.05~0.15 μm；AlInP or GaInP Window layers are AlInP Window layers Or GaInP Window layers；
Connected between the middle battery and the top battery by the second tunnel junctions；
The second described tunnelling becomes N++GaInP/P++AlGaAs, wherein, N++GaInP layers and P++The thickness of AlGaAs layers It is 0.01~0.04 μm, N++GaInP dopant is that Te, Se, Si one or more therein combine, doping concentration 3 × 1018~1 × 1019/cm3；P++AlGaAs dopant is Mg, Zn, C one or more kinds of combinations therein, and doping concentration will Ask 2 × 1019~5 × 1019/cm3；
DBR2 is additionally provided between second tunnel junctions and the top battery；
The DBR2 (the second distributed Bragg reflector) by 10~30 pairs of AlInP/AlGaInP structure compositions, wherein, Wherein, first pair of AlInP/AlGaInP structure is consistent with middle battery lattice lattice constant match, each pair AlInP/ adjacent afterwards The In molar constituents of AlGaInP structure structures are reduced according to staged, and In molar constituents gradient is 1%~3% in AlInP, In molar constituents gradient is 1%~3% in AlGaInP；In each pair AlInP/AlGaInP structures, AlInP structures, AlGaInP The thickness of structure calculates according to λ/4n, and wherein 650nm≤λ≤800nm, n are the refraction of corresponding A lInP or AlGaInP material Rate；
The top battery includes AlGaInP back ofs the body electric field, Ga successively from the bottom to topyIn1-yP bases, GayIn1-yP launch sites and AlInP Window layers, wherein GayIn1-yP bases and GayIn1-yGa component y scope is 0.30≤y≤0.50 in P launch sites, The top battery energy gap is 1.6~1.9eV, and AlGaInP back of the body electric field thickness is 0.02~0.15 μm, GayIn1-yP bases and GayIn1-yThe gross thickness of P launch sites is 0.5~1 μm, 0.03~0.05 μm of AlInP window layer thickness, is advantageous to push up battery suction More sunshines are received, improve the current density of top battery；
The bottom battery lower floor is additionally provided with p-type contact layer, and the p-type contact layer is p-type Ge substrates；The p-type Ge substrates Dopant be Ga, doping concentration is 1 × 1018~10 × 1018/cm3；
The upper strata of the top battery is additionally provided with N-type contact layer, and the N-type contact layer is the GaAs Window layers of GaAs materials, The GaAs Window layers growth thickness is 0.3~0.6 μm, dopant Te, Se, Si one or more kinds of combinations therein, is mixed Miscellaneous concentration is 3 × 1018~9 × 1018/cm3。
Embodiment 2
Each layer growth uses MOCVD technologies (Metal Organic Chemical Vapor in the present embodiment Deposition, metallo-organic compound chemical gaseous phase deposition).
The preparation method of the high-efficiency three-joint cascade gallium arsenide solar cell of Flouride-resistani acid phesphatase structure described in embodiment 1, its step is,
(1) bottom battery is prepared：Bottom battery includes P-Ge bases, N-Ge launch sites and GaInP nucleation successively from the bottom to top Layer；Pass through PH in p-type contact layer surface3N-Ge launch sites and GaInP nucleating layers are diffuseed to form, the P-Ge bases connect for p-type Contact layer and the transition region of N-Ge launch sites, base of the P-Ge bases as bottom battery；The μ of N-Ge launch sites thickness 0.1~0.3 M, 0.03~0.10 μm of the GaInP nucleating layers thickness；The bottom battery energy gap is 0.67eV；The p-type contact layer is P-type Ge substrate, dopant Ga, doping concentration is 1 × 1018~10 × 1018/cm3；
(2) InGaAs cushions are prepared：In the superficial growth InGaAs cushions of the bottom battery, the InGaAs delays Thickness degree is rushed as 0.5~1.5 μm.
(3) the first tunnel junctions are prepared：In the tunnel junctions of superficial growth first of the InGaAs cushions, first tunnelling Become N++GaAs/P++GaAs, wherein, N++GaAs layers and P++GaAs thickness degree is at 0.01~0.04 μm, N++GaAs doping Agent is that Te, Se, Si one or more therein combine, doping concentration 3 × 1018~1 × 1019/cm3；P++GaAs doping Agent is Mg, Zn, C one or more kinds of combinations therein, and doping concentration requires 2 × 1019~5 × 1019/cm3；
(4) DBR1 is prepared：In the superficial growth DBR1 of first tunnel junctions, the DBR1 (has the of strain structure One distributed Bragg reflector) by 10~30 pairs of InAlAs/InGaAs structure compositions, wherein, adjacent each pair InAlAs/ In InGaAs structures, In molar constituents staged increase in InGaAs, gradient is 1%~3%, and initial In molar constituents are 1%, In molar constituents staged increase in InAlAs, gradient are 1%~3%, and initial In molar constituents are 0.5%；Each pair InAlAs/ In InGaAs structures, InAlAs structures, the thickness of InGaAs structures calculate according to λ/4n, wherein 850nm≤λ≤1200nm, n For the refractive index of corresponding A lGaAs or InGaAs material；
(5) battery in preparing：The battery in the superficial growth of the DBR1, the middle battery include successively from the bottom to top InAlAs back ofs the body electric field, InxGa1-xAs bases, InxGa1-xAs launch sites, AlInP or GaInP Window layers composition, wherein InxGa1- xAs bases and InxGa1-xIn component x scope is 0.01≤x≤0.22 in As launch sites；The middle battery energy gap is 1.1~1.4eV, absorb more sunshines, the current density of battery in raising beneficial to middle battery；The thickness of InxGa1-xAs bases Spend for 1.5~2.5 μm, the thickness of InxGa1-xAs launch sites is 0.1~0.2 μm, AlInP or GaInP window layer thickness is 0.05~0.15 μm；AlInP or GaInP Window layers are AlInP Window layers or GaInP Window layers；
(6) the second tunnel junctions are prepared：In the tunnel junctions of superficial growth second of the middle battery, second tunnelling becomes N++ GaInP/P++AlGaAs, wherein, N++GaInP layers and P++The thickness of AlGaAs layers is 0.01~0.04 μm, N++GaInP's mixes Miscellaneous dose is that Te, Se, Si one or more therein combine, doping concentration 3 × 1018~1 × 1019/cm3；P++AlGaAs's Dopant is Mg, Zn, C one or more kinds of combinations therein, and doping concentration requires 2 × 1019~5 × 1019/cm3；
(7) DBR2 is prepared：In the superficial growth DBR2 of second tunnel junctions, the DBR2 (has the of strain structure Two distributed Bragg reflectors) by 10~30 pairs of AlInP/AlGaInP structure compositions, wherein, first couple of AlInP/AlGaInP Structure is consistent with middle battery lattice lattice constant match, In moles of each pair AlInP/AlGaInP structure structures adjacent afterwards Component is reduced according to staged, and In molar constituents gradient is that In molar constituent gradients are in 1%~3%, AlGaInP in AlInP 1%~3%；In each pair AlInP/AlGaInP structures, AlInP structures, the thickness of AlGaInP structures calculate according to λ/4n, its Middle 650nm≤λ≤800nm, n are the refractive index of corresponding A lInP or AlGaInP material；
(8) top battery is prepared：In the superficial growth top battery of the DBR2, the top battery includes successively from the bottom to top AlGaInP back ofs the body electric field, GayIn1-yP bases, GayIn1-yP launch sites and AlInP Window layers, wherein GayIn1-yP bases and GayIn1-yGa component y scope is 0.30≤y≤0.50 in P launch sites, the top battery energy gap is 1.6~ 1.9eV, AlGaInP back of the body electric field thickness are 0.02~0.15 μm, GayIn1-yP bases and GayIn1-yThe gross thickness of P launch sites is 0.5~1 μm, 0.03~0.05 μm of AlInP window layer thickness, be advantageous to push up the more sunshines of battery absorption, improve top battery Current density；
(9) N-type contact layer is prepared：In the superficial growth N-type contact layer of the top battery, the N-type contact layer is GaAs The GaAs Window layers of material, growth thickness are 0.3~0.6 μm, one or more kinds of groups therein of dopant Te, Se, Si Close, doping concentration is 3 × 1018~9 × 1018/cm3。
Battery energy gap in bottom of the present invention is 0.67eV, and middle battery energy gap is 1.1~1.4eV, and top battery forbidden band is wide Spend for 1.6~1.9eV, reduce the current mismatch between each sub- battery, reduce sunshine loss of energy, raising conversion efficiency； Meanwhile the DBR with strain structure of use, it can effectively discharge the stress that lattice mismatch is brought and draw with filtering lattice mismatch The dislocation entered；The sunshine that is not efficiently absorbed in battery or top battery, improves each sub- battery pair during DBR can effectively reflect The absorption of sunshine, at the same be introduced into DBR can be thinned in, top battery thickness, in raising battery with top battery anti-radiation performance.

Claims (8)

1. a kind of high-efficiency three-joint cascade gallium arsenide solar cell with Flouride-resistani acid phesphatase structure, it is characterised in that contacted including p-type Layer, bottom battery, the first tunnel junctions, the DBR1 with strain structure, middle battery, the second tunnel junctions, the DBR2 with strain structure, Push up battery and N-type contact layer；
The bottom battery, middle battery and top battery are three knot batteries, are arranged in order from the bottom to top；
Connected between the bottom battery and middle battery by the first tunnel junctions；
DBR1 is additionally provided between first tunnel junctions and the middle battery；
Connected between the middle battery and the top battery by the second tunnel junctions；
DBR2 is additionally provided between second tunnel junctions and the top battery；
The bottom battery lower floor is additionally provided with p-type contact layer, and the p-type contact layer is p-type Ge substrates；
The upper strata of the top battery is additionally provided with N-type contact layer, and the N-type contact layer is the GaAs Window layers of GaAs materials.
2. solar cell as claimed in claim 1, it is characterised in that first tunnelling becomes N++GaAs/P++GaAs, wherein, N++GaAs layers and P++GaAs thickness degree is at 0.01~0.04 μm, N++GaAs dopant be Te, Se, Si it is therein a kind of or Multiple combinations, doping concentration 3 × 1018~1 × 1019/cm3；P++GaAs dopant is that Mg, Zn, C are therein a kind of or more Kind combination, doping concentration requirement 2 × 1019~5 × 1019/cm3。
3. solar cell as claimed in claim 1, it is characterised in that InGaAs is provided between first tunnel junctions and bottom battery Cushion, the InGaAs buffer layer thicknesses are 0.5~1.5 μm.
4. solar cell as claimed in claim 1, it is characterised in that the DBR1 is by 10~30 pairs of InAlAs/InGaAs structures Composition, wherein, in adjacent each pair InAlAs/InGaAs structures, the increase of In molar constituents staged, gradient are in InGaAs 1%~3%, initial In molar constituents are In molar constituents staged increase in 1%, InAlAs, and gradient is 1%~3%, initially In molar constituents are 0.5%；In each pair InAlAs/InGaAs structures, InAlAs structures, the thickness of InGaAs structures are according to λ/4n Calculate, wherein 850nm≤λ≤1200nm, n are the refractive index of corresponding A lGaAs or InGaAs material.
5. solar cell as claimed in claim 1, it is characterised in that the second described tunnelling becomes N++GaInP/P++AlGaAs, Wherein, N++GaInP layers and P++The thickness of AlGaAs layers is 0.01~0.04 μm, N++GaInP dopant be Te, Se, Si its In one or more kinds of combinations, doping concentration 3 × 1018~1 × 1019/cm3；P++AlGaAs dopant be Mg, Zn, C its In one or more kinds of combinations, doping concentration requirement 2 × 1019~5 × 1019/cm3。
6. solar cell as claimed in claim 1, it is characterised in that the DBR2 is by 10~30 pairs of AlInP/AlGaInP structures Composition, wherein, wherein, first pair of AlInP/AlGaInP structure is consistent with middle battery lattice lattice constant match, adjacent afterwards The In molar constituents of each pair AlInP/AlGaInP structure structures are reduced according to staged, and In molar constituents gradient is in AlInP In molar constituents gradient is 1%~3% in 1%~3%, AlGaInP；In each pair AlInP/AlGaInP structures, AlInP structures, The thickness of AlGaInP structures calculates according to λ/4n, and wherein 650nm≤λ≤800nm, n are corresponding A lInP or AlGaInP material Refractive index.
7. the preparation method of any solar cells of claim 1-6, its step are,
(1) bottom battery is prepared：Bottom battery includes P-Ge bases, N-Ge launch sites and GaInP nucleating layers successively from the bottom to top；In P Type contact layer surface passes through PH3Diffuse to form N-Ge launch sites and GaInP nucleating layers, the P-Ge bases be p-type contact layer and The transition region of N-Ge launch sites, base of the P-Ge bases as bottom battery；0.1~0.3 μm of N-Ge launch sites thickness, it is described 0.03~0.10 μm of GaInP nucleating layers thickness；The bottom battery energy gap is 0.67eV；The p-type contact layer is p-type Ge's Substrate, dopant Ga, doping concentration is 1 × 1018~10 × 1018/cm3；
(2) the first tunnel junctions are prepared：In the tunnel junctions of superficial growth first of the InGaAs cushions, first tunnelling is become N++GaAs/P++GaAs, wherein, N++GaAs layers and P++GaAs thickness degree is at 0.01~0.04 μm, N++GaAs dopant is Te, Se, Si one or more kinds of combinations therein, doping concentration 3 × 1018~1 × 1019/cm3；P++GaAs dopant is Mg, Zn, C one or more kinds of combinations therein, doping concentration requirement 2 × 1019~5 × 1019/cm3；
(3) DBR1 is prepared：(there is first point of strain structure in the superficial growth DBR1, the DBR1 of first tunnel junctions Cloth Bragg reflector) by 10~30 pairs of InAlAs/InGaAs structure compositions, wherein, adjacent each pair InAlAs/InGaAs In structure, In molar constituents staged increase in InGaAs, gradient is 1%~3%, and initial In molar constituents are 1%, InAlAs Middle In molar constituents staged increase, gradient are 1%~3%, and initial In molar constituents are 0.5%；Each pair InAlAs/InGaAs In structure, InAlAs structures, the thickness of InGaAs structures calculate according to λ/4n, and wherein 850nm≤λ≤1200nm, n are corresponding The refractive index of AlGaAs or InGaAs materials；
(4) battery in preparing：The battery in the superficial growth of the DBR1, the middle battery include InAlAs successively from the bottom to top Carry on the back electric field, InxGa1-xAs bases, InxGa1-xAs launch sites, AlInP or GaInP Window layers composition, wherein InxGa1-xAs bases And InxGa1-xIn component x scope is 0.01≤x≤0.22 in As launch sites；The middle battery energy gap be 1.1~ 1.4eV, absorb more sunshines, the current density of battery in raising beneficial to middle battery；The thickness of InxGa1-xAs bases is 1.5~2.5 μm, the thickness of InxGa1-xAs launch sites is 0.1~0.2 μm, AlInP or GaInP window layer thickness is 0.05~ 0.15μm；AlInP or GaInP Window layers are AlInP Window layers or GaInP Window layers；
(5) the second tunnel junctions are prepared：In the tunnel junctions of superficial growth second of the middle battery, second tunnelling becomes N++ GaInP/P++AlGaAs, wherein, N++GaInP layers and P++The thickness of AlGaAs layers is 0.01~0.04 μm, N++GaInP's mixes Miscellaneous dose is that Te, Se, Si one or more therein combine, doping concentration 3 × 1018~1 × 1019/cm3；P++AlGaAs's mixes Miscellaneous dose is Mg, Zn, C one or more kinds of combinations therein, and doping concentration requires 2 × 1019~5 × 1019/cm3；
(6) DBR2 is prepared：(there is second point of strain structure in the superficial growth DBR2, the DBR2 of second tunnel junctions Cloth Bragg reflector) by 10~30 pairs of AlInP/AlGaInP structure compositions, wherein, first pair of AlInP/AlGaInP structure It is consistent with middle battery lattice lattice constant match, the In molar constituents of adjacent afterwards each pair AlInP/AlGaInP structure structures Reduced according to staged, in AlInP In molar constituents gradient be in 1%~3%, AlGaInP In molar constituents gradient be 1%~ 3%；In each pair AlInP/AlGaInP structures, AlInP structures, the thickness of AlGaInP structures calculate according to λ/4n, wherein 650nm ≤ λ≤800nm, n are the refractive index of corresponding A lInP or AlGaInP material；
(7) top battery is prepared：In the superficial growth top battery of the DBR2, the top battery includes successively from the bottom to top AlGaInP back ofs the body electric field, GayIn1-yP bases, GayIn1-yP launch sites and AlInP Window layers, wherein GayIn1-yP bases and GayIn1-yGa component y scope is 0.30≤y≤0.50 in P launch sites, the top battery energy gap is 1.6~ 1.9eV, AlGaInP back of the body electric field thickness are 0.02~0.15 μm, GayIn1-yP bases and GayIn1-yThe gross thickness of P launch sites is 0.5~1 μm, 0.03~0.05 μm of AlInP window layer thickness, be advantageous to push up the more sunshines of battery absorption, improve top battery Current density；
(8) N-type contact layer is prepared：In the superficial growth N-type contact layer of the top battery, the N-type contact layer is GaAs materials GaAs Window layers, growth thickness is 0.3~0.6 μm, dopant Te, Se, Si one or more kinds of combinations therein, doping Concentration is 3 × 1018~9 × 1018/cm3。
8. the preparation method of solar cell as claimed in claim 12, it is characterised in that step (1) prepares InGaAs bufferings afterwards Layer：In the superficial growth InGaAs cushions of the bottom battery, the InGaAs buffer layer thicknesses are 0.5~1.5 μm.
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