WO2019175651A1 - GaAs THREE-JUNCTION SOLAR CELL AND METHOD OF PREPARING THEREOF - Google Patents

GaAs THREE-JUNCTION SOLAR CELL AND METHOD OF PREPARING THEREOF Download PDF

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Publication number
WO2019175651A1
WO2019175651A1 PCT/IB2018/060149 IB2018060149W WO2019175651A1 WO 2019175651 A1 WO2019175651 A1 WO 2019175651A1 IB 2018060149 W IB2018060149 W IB 2018060149W WO 2019175651 A1 WO2019175651 A1 WO 2019175651A1
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Prior art keywords
solar subcell
solar
subcell
gaas
layer
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PCT/IB2018/060149
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French (fr)
Inventor
Zhenlong Wu
Wei Jiang
Yu Wang
Xiaoya HAN
Shilei DU
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Xiamen Changelight Co. Ltd.
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Publication of WO2019175651A1 publication Critical patent/WO2019175651A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0549—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising spectrum splitting means, e.g. dichroic mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present disclosure relates to a novel three -junction solar cell comprising a unique distributed Bragg reflector (DBR) layer, and methods of using and manufacturing the novel three-junction solar cell.
  • This disclosure further relates to the technical field of solar cells, and in particular to a lattice matched three -junction solar cell.
  • the present disclosure may improve the wavelength uniformity and doping uniformity of the middle solar subcell and improve the photoelectric performance of the battery.
  • GalnP / InGaAs /Ge solar cell which is the representative solar cell of GaAs three-junction solar cells, has become the leader in solar cell conversion efficiency because the GalnP / InGaAs /Ge solar cell can provide more than 30% and 40% of conversion efficiency at an extraterrestrial spectrum (AMO) and at a ground high-concentration condition (AM1.5D, 500X), respectively.
  • AMO extraterrestrial spectrum
  • AM1.5D ground high-concentration condition
  • the performance of a GalnP/InGaAs/Ge three-junction solar may be affected due to the current density decrease caused by the irradiation damage when the GalnP/InGaAs/Ge three-junction solar cell is exposed to particle irradiations.
  • a distributed Bragg reflector (DBR) layer is introduced into the middle subcell, more sunlight can be reflected into the middle subcell by the DBR layer to provide a relatively high current density.
  • the thickness of the base region of the middle subcell may be reduced thereby improving the radiation resistance features of the three-junction solar cell.
  • DBR distributed Bragg reflector
  • the present disclosure relates to a novel three -junction solar cell comprising a unique distributed Bragg reflector (DBR) layer, and methods of using and manufacturing the novel three-junction solar cell.
  • DBR distributed Bragg reflector
  • the present disclosure provides a three-junction solar cell comprising: a first bottom solar subcell; a second middle solar subcell; a third top solar subcell; a distributed Bragg reflector (DBR) layer, wherein the distributed Bragg reflector (DBR) layer is positioned immediately below the second middle solar subcell; a first tunnel junction positioned between the first bottom solar subcell and the distributed Bragg reflector (DBR) layer; and a second tunnel junction positioned between the second middle solar subcell and the third top solar subcell.
  • the distributed Bragg reflector (DBR) layer has an average lattice parameter greater than the lattice parameter of the second middle solar subcell.
  • Each of the three solar subcells is substantially lattice matched to each of the other solar subcells.
  • the present disclosure provides method of preparing a three- junction solar cell comprising: forming a first bottom solar subcell; forming a first junction tunnel; forming a distributed Bragg reflector (DBR) layer; forming a second middle solar subcell; forming a second junction tunnel; and forming a third top solar subcell.
  • the method of forming the three-junction solar cell is Metal-Organic Chemical Vapour Deposition (MOCVD) or Molecular Beam Epitaxy (MBE).
  • the distributed Bragg reflector (DBR) layer has an average lattice parameter greater than the lattice parameter of the second middle solar subcell.
  • Each of the three solar subcells is substantially lattice matched to each of the other solar subcells.
  • FIG. 1 shows a structural view of a GaAs three-junction solar cell of the present disclosure.
  • FIG. 2 shows a structural view of DBR of the present disclosure.
  • FIG. 3 shows the comparison data regarding the wavelength uniformity of the normal DBR and the DBR of the present disclosure.
  • first,“second,”“third,” etc. may be used herein to describe various information, the information should not be limited by these terms. These terms are only used to distinguish one category of information from another. For example, without departing from the scope of the present disclosure, first information may be termed as second information; and similarly, second information may also be termed as first information.
  • first information may be termed as second information; and similarly, second information may also be termed as first information.
  • second information may also be termed as first information.
  • the term“if’ may be understood to mean“when” or“upon” or“in response to” depending on the context.
  • the present disclosure provides a novel three-junction GaAs solar cells and the manufacturing method thereof.
  • the present disclosure introduces or increases the Indium (In) component in the DBR layer in such a manner that the lattice parameter of the DBR layer is greater than that of the middle subcell, for example, an InO.OlGaAs middle subcell. Therefore, a compressive stress generated by the lattice mismatch is introduced to balance the tensile stress caused by the thermal mismatch, thereby improving the wavelength and doping uniformity of the middle and top subcells to improve battery performance.
  • In Indium
  • the technical solution of the present disclosure is to balances the tensile stress caused by the thermal mismatch by increasing the lattice of the DBR reflective layer to introduce the compressive stress generated by the lattice mismatch, so that the wafer is smooth with neither concave nor convex when growing the middle and the top subcells.
  • the smooth feature of the wafer improves the temperature uniformity on the entire wafer, thereby improves the wavelength uniformity and doping uniformity of the middle and top subcells and improves the battery performance.
  • the present disclosure provides a three -junction solar cell comprising:
  • a distributed Bragg reflector (DBR) layer wherein the distributed Bragg reflector (DBR) layer is positioned immediately below the second middle solar subcell, and the distributed Bragg reflector (DBR) layer has an average lattice parameter greater than the lattice parameter of the second middle solar subcell;
  • a first tunnel junction positioned between the first bottom solar subcell and the distributed Bragg reflector (DBR) layer;
  • each of the three solar subcells is substantially lattice matched to each of the other solar subcells.
  • the present disclosure provides a three -junction solar cell comprising:
  • DBR distributed Bragg reflector
  • a first tunnel junction positioned between the first bottom solar subcell and the distributed Bragg reflector (DBR) layer;
  • the distributed Bragg reflector (DBR) layer comprises n repeating units of Al x In y GaAs/In z GaAs reflection layers, wherein 5 ⁇ n ⁇ 25, 0.5 ⁇ x ⁇ l, 0.0l ⁇ y ⁇ 0.05, and 0.0l ⁇ z ⁇ 0.05,
  • each of the three solar subcells is substantially lattice matched to each of the other solar subcells.
  • the distributed Bragg reflector (DBR) layer has an average lattice parameter greater than the lattice parameter of the second middle solar subcell.
  • the n repeating units of Al x In y GaAs/In z GaAs reflection layers of the DBR layer are configured such that said In z GaAs is deposited on top of said Al x In y GaAs in each unit of the Al x In y GaAs/In z GaAs reflection layer.
  • each Al x In y GaAs/In z GaAs reflection layer has an optical thickness of 1/4 wavelength of a center reflecting light.
  • the first bottom solar subcell is a Ge solar subcell.
  • the second middle solar subcell is an InGaAs solar subcell.
  • the third top solar subcell is a GalnP solar subcell.
  • the third top solar subcell is an AlGalnP solar subcell.
  • the second middle solar subcell is an Ino . oiGaAs solar subcell
  • the distributed Bragg reflector (DBR) layer has an average lattice parameter greater than the lattice parameter of the Ino . oiGaAs solar subcell.
  • the second middle solar subcell is an Ino . oiGaAs solar subcell having a lattice parameter of 0.5673 nm, and the distributed Bragg reflector (DBR) layer has an average lattice parameter greater than 0.5673 nm.
  • DBR distributed Bragg reflector
  • the first bottom solar subcell is Ge solar subcell; the second middle solar subcell is an InGaAs solar subcell; and the third top solar subcell is a GalnP solar subcell.
  • the first bottom solar subcell is Ge solar subcell; the second middle solar subcell is an InGaAs solar subcell; and the third top solar subcell is an AlGalnP solar subcell.
  • the first bottom solar subcell is Ge solar subcell; the second middle solar subcell is an Ino . oiGaAs solar subcell; the third top solar subcell is an AlGalnP solar subcell, wherein the distributed Bragg reflector (DBR) layer has an average lattice parameter greater than the lattice parameter of the Ino . oiGaAs solar subcell.
  • the first bottom solar subcell is Ge solar subcell; the second middle solar subcell is an Ino . oiGaAs solar subcell; the third top solar subcell is an AlGalnP solar subcell, wherein the distributed Bragg reflector (DBR) layer has an average lattice parameter greater than 0.5673 nm.
  • the present disclosure provides method of preparing a three- junction solar cell comprising: forming a first bottom solar subcell; forming a first junction tunnel; forming a distributed Bragg reflector (DBR) layer; forming a second middle solar subcell; forming a second junction tunnel; and forming a third top solar subcell.
  • the method of forming the three-junction solar cell is Metal-Organic Chemical Vapour Deposition (MOCVD) or Molecular Beam Epitaxy (MBE).
  • the distributed Bragg reflector (DBR) layer has an average lattice parameter greater than the lattice parameter of the second middle solar subcell.
  • Each of the three solar subcells is substantially lattice matched to each of the other solar subcells.
  • the present disclosure provides method of preparing a three- junction solar cell.
  • the method may include at least following steps: forming a first bottom solar subcell; forming a first junction tunnel; forming a distributed Bragg reflector (DBR) layer;
  • DBR distributed Bragg reflector
  • the method of forming the three-junction solar cell is Metal-Organic Chemical Vapor Deposition (MOCVD) or Molecular Beam Epitaxy (MBE).
  • the distributed Bragg reflector (DBR) layer comprises n repeating units of Al x In y GaAs/In z GaAs reflection layers, wherein 5 ⁇ n ⁇ 25, 0.5 ⁇ x ⁇ l, 0.0l ⁇ y ⁇ 0.05, and 0.0l ⁇ z ⁇ 0.05.
  • Each of the three solar subcells is substantially lattice matched to each of the other solar subcells.
  • the distributed Bragg reflector (DBR) layer has an average lattice parameter greater than the lattice parameter of the second middle solar subcell.
  • the first bottom solar subcell is Ge solar subcell; the second middle solar subcell is an InGaAs solar subcell; and the third top solar subcell is a GalnP solar subcell.
  • the first bottom solar subcell is Ge solar subcell; the second middle solar subcell is an InGaAs solar subcell; and the third top solar subcell is an AlGalnP solar subcell.
  • the first bottom solar subcell is Ge solar subcell; the second middle solar subcell is an Ino . oiGaAs solar subcell; and the third top solar subcell is a GalnP solar subcell or an AlGalnP solar subcell.
  • the second middle solar subcell is an Ino . oiGaAs solar subcell
  • the distributed Bragg reflector (DBR) layer has an average lattice parameter greater than the lattice parameter of the Ino . oiGaAs solar subcell.
  • the second middle solar subcell is an Ino . oiGaAs solar subcell having a lattice parameter of 0.5673 nm, and the distributed Bragg reflector (DBR) layer has an average lattice parameter greater than 0.5673 nm.
  • DBR distributed Bragg reflector
  • the n repeating units of Al x In y GaAs/In z GaAs reflection layers are configured such that said In z GaAs is deposited on top of said Al x In y GaAs in each unit of the Al x In y GaAs/In z GaAs reflection layer.
  • each Al x In y GaAs/In z GaAs reflection layer has an optical thickness of 1/4 wavelength of a center reflecting light.
  • the growth pause time for the hetero interface between Al x In y GaAs layer and In z GaAs is controlled between about 0.5-10 s.
  • the growth pause time is about 1-10, 1-9, 1-8, 1-7, 1-6, 1-5, 2-10, 2-9, 2-8, 2-7, 2-6, 2-5 s. In one preferred aspect, the growth pause time is about 2-5 s.
  • One of the key features of the present disclosure and the point of protection are based on the introduction of the DBR reflective layer into the middle subcell of the GalnP/InGaAs/Ge three-junction cell, and make the lattice parameter of the DBR reflective layer greater than the lattice parameter of the middle subcell, such as InO.O lGaAs subcell.
  • the prior art adopted a structure in which the lattice parameters of the DBR and the middle subcell must match each other.
  • the GalnP/InGaAs/Ge three -junction solar cell described as the embodiment of the present disclosure is grown on a Ge substrate by Metal-Organic Chemical Vapour Deposition (MOCVD) or Molecular Beam Epitaxy (MBE).
  • MOCVD Metal-Organic Chemical Vapour Deposition
  • MBE Molecular Beam Epitaxy
  • the three-junction solar cell comprises a first subcell, a first tunnel junction, a DBR reflective layer, a second sub-cell, a second tunnel junction, and a third sub-cell, wherein the three sub-cells are lattice -matched and connected by the tunnel junctions.
  • the first subcell is a bottom Ge subcell
  • the second subcell is a middle InGaAs subcell
  • the third subcell is a top (Al) GalnP subcell.
  • Phosphorus diffusion on a p-type Ge substrate provided an n-type emitter region and a pn junction of the first subcell.
  • a nucleation layer which also functioned as the window layer of the first bottom subcell, was formed by growing (Al) GalnP layer on the on the p-type Ge substrate, wherein the lattice of (Al) GalnP layer and p-type Ge substrate matched each other.
  • An n-type GaAs or n -type GalnP is then formed as the N-type layer of the first tunnel junction, and a p-type (Al) GaAs material is formed as the P-type layer of the first tunnel junction.
  • the N-type and P-type dopings are doped with Si and C, respectively.
  • a DBR reflective layer of Al x In y GaAs/In z GaAs is further formed, in which 0.5 £ x £ 1, 0.01 £ y £ 0.05, and 0.01 £ z £ 0.05.
  • the average lattice parameter of DBR layer is greater than the lattice parameter of the middle Ino . oiGaAs layer.
  • the lattice parameter of the middle Ino . oiGaAs layer is 0.5673nm
  • the average lattice parameter of DBR layer is greater than 0.5673nm.
  • the DBR layer is composed of n units of Al x In y GaAs/In z GaAs as illustrated in FIG. 2, wherein the optical thickness of each layer of material is about 1/4 wavelength of a center reflecting light, and wherein n is greater than 5 and less than 25.
  • the second subcell comprises, in an order from bottom to top, a back field layer, a p- type doped InGaAs layer as base region, an n-type doped InGaAs layer as emission region, and a window layer.
  • the back field layer comprises GalnP or AlGaAs material
  • the window layer comprises AlGalnP or AllnP material.
  • n-Type GaAs or n-type GalnP is formed as the N-type layer of the second tunnel junction; and p-type (Al) GaAs is formed as the P-type layer of the second tunnel junction.
  • the N -type and P -type dopings are doped with Si and C, respectively.
  • the third subcell comprises, in an order from bottom to top, an AlGalnP back field layer, a p-type doped AlGalnP or GalnP layer as base region, an n-type doped AlGalnP or GalnP layer as emission region, and an AllnP window layer.
  • a GaAs or InGaAs layer is formed as an N-type contact layer that forms an ohmic contact with the electrode.
  • the GalnP/InGaAs/Ge three -junction solar cell described as the comparison embodiment of the present disclosure is grown on a Ge substrate by Metal- Organic Chemical Vapour Deposition (MOCVD) or Molecular Beam Epitaxy (MBE).
  • MOCVD Metal- Organic Chemical Vapour Deposition
  • MBE Molecular Beam Epitaxy
  • the three-junction solar cell comprises a first subcell, a first tunnel junction, a DBR reflective layer, a second sub-cell, a second tunnel junction, and a third sub- cell, wherein the three sub-cells are lattice-matched and connected by the tunnel junctions .
  • the first subcell is a bottom Ge subcell
  • the second subcell is a middle InGaAs subcell
  • the third subcell is a top (Al) GalnP subcell.
  • Phosphorus diffusion on a p-type Ge substrate provided an n-type emitter region and a pn junction of the first subcell.
  • a nucleation layer which also functioned as the window layer of the first bottom subcell, was formed by growing (Al) GalnP layer on the on the p-type Ge substrate, wherein the lattice of (Al) GalnP layer and p-type Ge substrate matched each other.
  • n-type GaAs or n -type GalnP is then formed as the N-type layer of the first tunnel junction, and a p-type (Al) GaAs material is formed as the P-type layer of the first tunnel junction.
  • the N-type and P-type dopings are doped with Si and C, respectively.
  • a DBR reflective layer of Al x GaAs/InGaAs is further formed, in which 0.5 £ x £ l.
  • the DBR layer is composed of n units of AlxGaAs/InGaAs, wherein the optical thickness of each layer of material is about 1/4 wavelength of a center reflecting light, and wherein n is greater than 5 and less than 25.
  • the second subcell comprises, in an order from bottom to top, a back field layer, a p- type doped InGaAs layer as base region, an n-type doped InGaAs layer as emission region, and a window layer.
  • the back field layer comprises GalnP or AlGaAs material
  • the window layer comprises AlGalnP or AllnP material.
  • n-Type GaAs or n-type GalnP is formed as the N-type layer of the second tunnel junction; and p-type (Al) GaAs is formed as the P-type layer of the second tunnel junction.
  • the N -type and P -type dopings are doped with Si and C, respectively.
  • the third subcell comprises, in an order from bottom to top, an AlGalnP back field layer, a p-type doped AlGalnP or GalnP layer as base region, an n-type doped AlGalnP or GalnP layer as emission region, and an AllnP window layer.
  • FIG. 3 shows the comparison data regarding the wavelength uniformity of the normal DBR (the average lattice parameter of DBR is substantially the same as the lattice parameter of the middle solar subcell) and the DBR of the present disclosure (the average lattice parameter of DBR is greater than the lattice parameter of the middle solar subcell).
  • FIG. 3 clear demonstrated the significant improvement of the new DBR of the present disclosure for the wavelength uniformity for the top solar subcell.
  • the normal DBR provided uneven wavelengths between a wavelength range of about 654 nm to about 664 nm.
  • the DBR of the present disclosure provided almost constant wavelength around 656 nm. Such a improvement is clearly unexpected.
  • the present disclosure provides a novel three-junction GaAs solar cells and the manufacturing method thereof. Based on the concept of current DBR layer, the present disclosure introduces or increases the Indium (In) component in the DBR layer in such a manner that the lattice parameter of the DBR layer is greater than that of the middle subcell, for example, an InO.OlGaAs middle subcell. Therefore, a compressive stress generated by the lattice mismatch is introduced to balance the tensile stress caused by the thermal mismatch, thereby improving the wavelength and doping uniformity of the middle and top subcells to improve battery performance.
  • In Indium
  • the technical solution of the present disclosure balances the tensile stress caused by the thermal mismatch by increasing the lattice of the DBR reflective layer to introduce the compressive stress generated by the lattice mismatch, so that the wafer is smooth with neither concave nor convex when growing the middle and the top subcells.
  • the smooth feature of the wafer improves the temperature uniformity on the entire wafer, thereby improving the wavelength uniformity and doping uniformity of the middle and top subcells and improving the battery performance.

Abstract

A three-junction solar cell comprises a distributed Bragg reflector (DBR) layer. The solar cell is a lattice matched three-junction solar cell. The lattice-matched three-junction solar cell can improve the wavelength uniformity and doping uniformity of the middle solar subcell and improve the photoelectric performance of the battery. A method of manufacturing the three-junction solar cell is also provided.

Description

GaAs THREE- JUNCTION SOLAR CELL AND METHOD OF PREPARING THEREOF
TECHNICAL FIELD
[0001] The present disclosure relates to a novel three -junction solar cell comprising a unique distributed Bragg reflector (DBR) layer, and methods of using and manufacturing the novel three-junction solar cell. This disclosure further relates to the technical field of solar cells, and in particular to a lattice matched three -junction solar cell. For the lattice-matched three- junction solar cell, the present disclosure may improve the wavelength uniformity and doping uniformity of the middle solar subcell and improve the photoelectric performance of the battery.
BACKGROUND
[0002] Solar cells convert solar energy directly into electricity, making it the most effective form of clean energy. With their high conversion efficiency (about 2 times that of Si solar cells), excellent radiation resistance, stable temperature characteristics and easy scale production, GaAs three-junction solar cells have completely replaced Si solar cells to become the main power source of the spacecraft. The GalnP / InGaAs /Ge solar cell, which is the representative solar cell of GaAs three-junction solar cells, has become the leader in solar cell conversion efficiency because the GalnP / InGaAs /Ge solar cell can provide more than 30% and 40% of conversion efficiency at an extraterrestrial spectrum (AMO) and at a ground high-concentration condition (AM1.5D, 500X), respectively.
[0003] In 2011, Takamoto et al. found that when about addition 1% of indium (In) is added to the GaAs solar subcell of a GalnP/InGaAs/Ge three -junction battery to match the lattice of the three-junction solar cell, the conversion efficiency of three -junction solar cell can be effectively improved. In 2000, Stringfellow et al. found that adding a surfactant (such as Sb) to the GalnP material of the growth top cell or changing the growth conditions to change the degree of disorder of GalnP, the open circuit voltage and performance of the solar cell may be effectively improved. [0004] Under an extraterrestrial space environment, the performance of a GalnP/InGaAs/Ge three-junction solar, especially the InGaAs middle subcell, may be affected due to the current density decrease caused by the irradiation damage when the GalnP/InGaAs/Ge three-junction solar cell is exposed to particle irradiations. When a distributed Bragg reflector (DBR) layer is introduced into the middle subcell, more sunlight can be reflected into the middle subcell by the DBR layer to provide a relatively high current density. In addition, the thickness of the base region of the middle subcell may be reduced thereby improving the radiation resistance features of the three-junction solar cell.
[0005] Especially for large-sized wafers, since the thermal expansion coefficient of InGaAs material is smaller than that of Ge, when the InGaAs material is epitaxially grown on the Ge substrate, tensile stress is generated with the increase of the temperature to cause the epitaxial wafer to be concave. Therefore, there is temperature difference between the wafer center and the wafer edge . Such temperature difference may lead to a difference of the degree of disorder of GalnP, and therefore may affect the wavelength uniformity and doping uniformity of the middle and top subcells, and thus may affect the photoelectric performance of the solar cell chip.
SUMMARY
[0006] The present disclosure relates to a novel three -junction solar cell comprising a unique distributed Bragg reflector (DBR) layer, and methods of using and manufacturing the novel three-junction solar cell.
[0007] In a first aspect, the present disclosure provides a three-junction solar cell comprising: a first bottom solar subcell; a second middle solar subcell; a third top solar subcell; a distributed Bragg reflector (DBR) layer, wherein the distributed Bragg reflector (DBR) layer is positioned immediately below the second middle solar subcell; a first tunnel junction positioned between the first bottom solar subcell and the distributed Bragg reflector (DBR) layer; and a second tunnel junction positioned between the second middle solar subcell and the third top solar subcell. The distributed Bragg reflector (DBR) layer has an average lattice parameter greater than the lattice parameter of the second middle solar subcell. Each of the three solar subcells is substantially lattice matched to each of the other solar subcells.
[0008] In a second aspect, the present disclosure provides method of preparing a three- junction solar cell comprising: forming a first bottom solar subcell; forming a first junction tunnel; forming a distributed Bragg reflector (DBR) layer; forming a second middle solar subcell; forming a second junction tunnel; and forming a third top solar subcell. The method of forming the three-junction solar cell is Metal-Organic Chemical Vapour Deposition (MOCVD) or Molecular Beam Epitaxy (MBE). The distributed Bragg reflector (DBR) layer has an average lattice parameter greater than the lattice parameter of the second middle solar subcell. Each of the three solar subcells is substantially lattice matched to each of the other solar subcells.
[0009] It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention, as claimed.
BRIEF DESORPTION OF THE DRAWINGS
[0010] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and, together with the description, serve to explain the principles of the invention.
[0011] FIG. 1 shows a structural view of a GaAs three-junction solar cell of the present disclosure.
[0012] FIG. 2 shows a structural view of DBR of the present disclosure.
[0013] FIG. 3 shows the comparison data regarding the wavelength uniformity of the normal DBR and the DBR of the present disclosure.
DETAILED DESCRIPTION
[0014] Hereinafter, embodiments of the present disclosure will be described in conjunction with the accompanying drawings, rather than to limit the present disclosure. Variations of structure, method, or functional made by the ordinary skilled in the art based on these examples are all contained in the scope of the present disclosure.
[0015] The terms used in present disclosure are merely directed to illustrate the particular examples, rather than limit to the present disclosure. The singular forms“a”“an” and“the” as used in the present disclosure as well as the appended claims also refer to plural forms unless other meanings are definitely contained in the context. It should be appreciated that the term "and/or" as used herein refers to any or all possible combination of one or more associated listed items.
[0016] It shall be understood that, although the terms“first,”“second,”“third,” etc. may be used herein to describe various information, the information should not be limited by these terms. These terms are only used to distinguish one category of information from another. For example, without departing from the scope of the present disclosure, first information may be termed as second information; and similarly, second information may also be termed as first information. As used herein, the term“if’ may be understood to mean“when” or“upon” or“in response to” depending on the context.
[0017] Reference throughout this specification to“one embodiment,”“an embodiment,” “another embodiment,” or the like in the singular or plural means that one or more particular features, structures, or characteristics described in connection with an embodiment is included in at least one embodiment of the present disclosure. Thus, the appearances of the phrases“in one embodiment” or“in an embodiment,”“in another embodiment,” or the like in the singular or plural in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics in one or more embodiments may include combined in any suitable manner.
[0018] Some embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. In the case of no conflict, the following embodiments and the features in the embodiments may be combined with each other.
[0019] To solve the foregoing mentioned problems of the currently available three-junction solar cells, the present disclosure provides a novel three-junction GaAs solar cells and the manufacturing method thereof. Based on the concept of current DBR layer, the present disclosure introduces or increases the Indium (In) component in the DBR layer in such a manner that the lattice parameter of the DBR layer is greater than that of the middle subcell, for example, an InO.OlGaAs middle subcell. Therefore, a compressive stress generated by the lattice mismatch is introduced to balance the tensile stress caused by the thermal mismatch, thereby improving the wavelength and doping uniformity of the middle and top subcells to improve battery performance.
[0020] The technical solution of the present disclosure is to balances the tensile stress caused by the thermal mismatch by increasing the lattice of the DBR reflective layer to introduce the compressive stress generated by the lattice mismatch, so that the wafer is smooth with neither concave nor convex when growing the middle and the top subcells. The smooth feature of the wafer improves the temperature uniformity on the entire wafer, thereby improves the wavelength uniformity and doping uniformity of the middle and top subcells and improves the battery performance.
[0021] In one embodiment, the present disclosure provides a three -junction solar cell comprising:
[0022] a first bottom solar subcell;
[0023] a second middle solar subcell;
[0024] a third top solar subcell;
[0025] a distributed Bragg reflector (DBR) layer, wherein the distributed Bragg reflector (DBR) layer is positioned immediately below the second middle solar subcell, and the distributed Bragg reflector (DBR) layer has an average lattice parameter greater than the lattice parameter of the second middle solar subcell;
[0026] a first tunnel junction positioned between the first bottom solar subcell and the distributed Bragg reflector (DBR) layer; and
[0027] a second tunnel junction positioned between the second middle solar subcell and the third top solar subcell;
[0028] wherein each of the three solar subcells is substantially lattice matched to each of the other solar subcells. [0029] In one embodiment, the present disclosure provides a three -junction solar cell comprising:
[0030] a first bottom solar subcell;
[0031] a second middle solar subcell;
[0032] a third top solar subcell;
[0033] a distributed Bragg reflector (DBR) layer, wherein the distributed Bragg reflector (DBR) layer is positioned immediately below the second middle solar subcell;
[0034] a first tunnel junction positioned between the first bottom solar subcell and the distributed Bragg reflector (DBR) layer; and
[0035] a second tunnel junction positioned between the second middle solar subcell and the third top solar subcell;
[0036] wherein the distributed Bragg reflector (DBR) layer comprises n repeating units of AlxInyGaAs/InzGaAs reflection layers, wherein 5<n<25, 0.5<x<l, 0.0l<y<0.05, and 0.0l<z<0.05,
[0037] wherein each of the three solar subcells is substantially lattice matched to each of the other solar subcells.
[0038] In one embodiment regarding the three -junction solar cell of the present disclosure, the distributed Bragg reflector (DBR) layer has an average lattice parameter greater than the lattice parameter of the second middle solar subcell.
[0039] In one embodiment regarding the three -junction solar cell of the present disclosure, the n repeating units of AlxInyGaAs/InzGaAs reflection layers of the DBR layer are configured such that said InzGaAs is deposited on top of said AlxInyGaAs in each unit of the AlxInyGaAs/InzGaAs reflection layer.
[0040] In one embodiment regarding the three -junction solar cell of the present disclosure, each AlxInyGaAs/InzGaAs reflection layer has an optical thickness of 1/4 wavelength of a center reflecting light. [0041] In one embodiment regarding the three -junction solar cell of the present disclosure, the first bottom solar subcell is a Ge solar subcell.
[0042] In one embodiment regarding the three -junction solar cell of the present disclosure, the second middle solar subcell is an InGaAs solar subcell.
[0043] In one embodiment regarding the three -junction solar cell of the present disclosure, the third top solar subcell is a GalnP solar subcell.
[0044] In one embodiment regarding the three -junction solar cell of the present disclosure, the third top solar subcell is an AlGalnP solar subcell.
[0045] In one embodiment regarding the three -junction solar cell of the present disclosure, the second middle solar subcell is an Ino.oiGaAs solar subcell, and the distributed Bragg reflector (DBR) layer has an average lattice parameter greater than the lattice parameter of the Ino.oiGaAs solar subcell.
[0046] In one embodiment regarding the three -junction solar cell of the present disclosure, the second middle solar subcell is an Ino.oiGaAs solar subcell having a lattice parameter of 0.5673 nm, and the distributed Bragg reflector (DBR) layer has an average lattice parameter greater than 0.5673 nm.
[0047] In one embodiment regarding the three -junction solar cell of the present disclosure, the first bottom solar subcell is Ge solar subcell; the second middle solar subcell is an InGaAs solar subcell; and the third top solar subcell is a GalnP solar subcell.
[0048] In one embodiment regarding the three -junction solar cell of the present disclosure, the first bottom solar subcell is Ge solar subcell; the second middle solar subcell is an InGaAs solar subcell; and the third top solar subcell is an AlGalnP solar subcell.
[0049] In one embodiment regarding the three -junction solar cell of the present disclosure, the first bottom solar subcell is Ge solar subcell; the second middle solar subcell is an Ino.oiGaAs solar subcell; the third top solar subcell is an AlGalnP solar subcell, wherein the distributed Bragg reflector (DBR) layer has an average lattice parameter greater than the lattice parameter of the Ino.oiGaAs solar subcell. [0050] In one embodiment regarding the three -junction solar cell of the present disclosure, the first bottom solar subcell is Ge solar subcell; the second middle solar subcell is an Ino.oiGaAs solar subcell; the third top solar subcell is an AlGalnP solar subcell, wherein the distributed Bragg reflector (DBR) layer has an average lattice parameter greater than 0.5673 nm.
[0051] In one embodiment, the present disclosure provides method of preparing a three- junction solar cell comprising: forming a first bottom solar subcell; forming a first junction tunnel; forming a distributed Bragg reflector (DBR) layer; forming a second middle solar subcell; forming a second junction tunnel; and forming a third top solar subcell. The method of forming the three-junction solar cell is Metal-Organic Chemical Vapour Deposition (MOCVD) or Molecular Beam Epitaxy (MBE). The distributed Bragg reflector (DBR) layer has an average lattice parameter greater than the lattice parameter of the second middle solar subcell. Each of the three solar subcells is substantially lattice matched to each of the other solar subcells.
[0052] In one embodiment, the present disclosure provides method of preparing a three- junction solar cell. The method may include at least following steps: forming a first bottom solar subcell; forming a first junction tunnel; forming a distributed Bragg reflector (DBR) layer;
[0053] forming a second middle solar subcell; forming a second junction tunnel; and forming a third top solar subcell.
[0054] The method of forming the three-junction solar cell is Metal-Organic Chemical Vapor Deposition (MOCVD) or Molecular Beam Epitaxy (MBE). The distributed Bragg reflector (DBR) layer comprises n repeating units of AlxInyGaAs/InzGaAs reflection layers, wherein 5<n<25, 0.5<x<l, 0.0l<y<0.05, and 0.0l<z<0.05. Each of the three solar subcells is substantially lattice matched to each of the other solar subcells.
[0055] In one embodiment regarding the method of preparing a three-junction solar cell of the present disclosure, the distributed Bragg reflector (DBR) layer has an average lattice parameter greater than the lattice parameter of the second middle solar subcell. [0056] In one embodiment regarding the method of preparing a three-junction solar cell of the present disclosure, the first bottom solar subcell is Ge solar subcell; the second middle solar subcell is an InGaAs solar subcell; and the third top solar subcell is a GalnP solar subcell.
[0057] In one embodiment regarding the method of preparing a three-junction solar cell of the present disclosure, the first bottom solar subcell is Ge solar subcell; the second middle solar subcell is an InGaAs solar subcell; and the third top solar subcell is an AlGalnP solar subcell.
[0058] In one embodiment regarding the method of preparing a three-junction solar cell of the present disclosure, the first bottom solar subcell is Ge solar subcell; the second middle solar subcell is an Ino.oiGaAs solar subcell; and the third top solar subcell is a GalnP solar subcell or an AlGalnP solar subcell.
[0059] In one embodiment regarding the method of preparing a three-junction solar cell of the present disclosure, the second middle solar subcell is an Ino.oiGaAs solar subcell, and the distributed Bragg reflector (DBR) layer has an average lattice parameter greater than the lattice parameter of the Ino.oiGaAs solar subcell.
[0060] In one embodiment regarding the method of preparing a three-junction solar cell of the present disclosure, the second middle solar subcell is an Ino.oiGaAs solar subcell having a lattice parameter of 0.5673 nm, and the distributed Bragg reflector (DBR) layer has an average lattice parameter greater than 0.5673 nm.
[0061] In one embodiment regarding the method of preparing a three-junction solar cell of the present disclosure, the n repeating units of AlxInyGaAs/InzGaAs reflection layers are configured such that said InzGaAs is deposited on top of said AlxInyGaAs in each unit of the AlxInyGaAs/InzGaAs reflection layer.
[0062] In one embodiment regarding the method of preparing a three-junction solar cell of the present disclosure, each AlxInyGaAs/InzGaAs reflection layer has an optical thickness of 1/4 wavelength of a center reflecting light.
[0063] In one embodiment regarding the method of preparing a three-junction solar cell of the present disclosure, more specifically in the process of fabricating DBR layer, in order to improve the heterojunction quality of the alternative AlxInyGaAs layer and InzGaAs layer in the MOCVD growth process, the growth pause time for the hetero interface between AlxInyGaAs layer and InzGaAs is controlled between about 0.5-10 s. In one aspect, the growth pause time is about 1-10, 1-9, 1-8, 1-7, 1-6, 1-5, 2-10, 2-9, 2-8, 2-7, 2-6, 2-5 s. In one preferred aspect, the growth pause time is about 2-5 s.
[0064] In conjunction with the figures and exemplary embodiments, the technical solutions in the embodiments of the present disclosure will be clearly and completely described. Obviously, the described embodiments are merely part of embodiments of the present disclosure, rather than all embodiments. Any embodiment obtained by those of ordinary skill in the art is within the scope of protection of the present application if such embodiment does not involve any inventive step in view of the present disclosure.
[0065] One of the key features of the present disclosure and the point of protection are based on the introduction of the DBR reflective layer into the middle subcell of the GalnP/InGaAs/Ge three-junction cell, and make the lattice parameter of the DBR reflective layer greater than the lattice parameter of the middle subcell, such as InO.O lGaAs subcell. On the contrary, the prior art adopted a structure in which the lattice parameters of the DBR and the middle subcell must match each other.
[0066] As illustrated in FIG. 1, the GalnP/InGaAs/Ge three -junction solar cell described as the embodiment of the present disclosure is grown on a Ge substrate by Metal-Organic Chemical Vapour Deposition (MOCVD) or Molecular Beam Epitaxy (MBE). From the bottom to the top, the three-junction solar cell comprises a first subcell, a first tunnel junction, a DBR reflective layer, a second sub-cell, a second tunnel junction, and a third sub-cell, wherein the three sub-cells are lattice -matched and connected by the tunnel junctions. In this exemplified embodiment, the first subcell is a bottom Ge subcell, the second subcell is a middle InGaAs subcell, and the third subcell is a top (Al) GalnP subcell.
[0067] Phosphorus diffusion on a p-type Ge substrate provided an n-type emitter region and a pn junction of the first subcell. A nucleation layer, which also functioned as the window layer of the first bottom subcell, was formed by growing (Al) GalnP layer on the on the p-type Ge substrate, wherein the lattice of (Al) GalnP layer and p-type Ge substrate matched each other. [0068] An n-type GaAs or n -type GalnP is then formed as the N-type layer of the first tunnel junction, and a p-type (Al) GaAs material is formed as the P-type layer of the first tunnel junction. The N-type and P-type dopings are doped with Si and C, respectively.
[0069] A DBR reflective layer of AlxInyGaAs/InzGaAs is further formed, in which 0.5 £ x £ 1, 0.01 £ y £ 0.05, and 0.01 £ z £ 0.05. The average lattice parameter of DBR layer is greater than the lattice parameter of the middle Ino.oiGaAs layer. For example, when the lattice parameter of the middle Ino.oiGaAs layer is 0.5673nm, the average lattice parameter of DBR layer is greater than 0.5673nm. The DBR layer is composed of n units of AlxInyGaAs/InzGaAs as illustrated in FIG. 2, wherein the optical thickness of each layer of material is about 1/4 wavelength of a center reflecting light, and wherein n is greater than 5 and less than 25.
[0070] The second subcell comprises, in an order from bottom to top, a back field layer, a p- type doped InGaAs layer as base region, an n-type doped InGaAs layer as emission region, and a window layer. The back field layer comprises GalnP or AlGaAs material, and the window layer comprises AlGalnP or AllnP material.
[0071] n-Type GaAs or n-type GalnP is formed as the N-type layer of the second tunnel junction; and p-type (Al) GaAs is formed as the P-type layer of the second tunnel junction. The N -type and P -type dopings are doped with Si and C, respectively.
[0072] The third subcell comprises, in an order from bottom to top, an AlGalnP back field layer, a p-type doped AlGalnP or GalnP layer as base region, an n-type doped AlGalnP or GalnP layer as emission region, and an AllnP window layer.
[0073] Finally, a GaAs or InGaAs layer is formed as an N-type contact layer that forms an ohmic contact with the electrode.
[0074] As illustrated in FIG. 1, the GalnP/InGaAs/Ge three -junction solar cell described as the comparison embodiment of the present disclosure is grown on a Ge substrate by Metal- Organic Chemical Vapour Deposition (MOCVD) or Molecular Beam Epitaxy (MBE). From the bottom to the top, the three-junction solar cell comprises a first subcell, a first tunnel junction, a DBR reflective layer, a second sub-cell, a second tunnel junction, and a third sub- cell, wherein the three sub-cells are lattice-matched and connected by the tunnel junctions . In this exemplified embodiment, the first subcell is a bottom Ge subcell, the second subcell is a middle InGaAs subcell, and the third subcell is a top (Al) GalnP subcell.
[0075] Phosphorus diffusion on a p-type Ge substrate provided an n-type emitter region and a pn junction of the first subcell. A nucleation layer, which also functioned as the window layer of the first bottom subcell, was formed by growing (Al) GalnP layer on the on the p-type Ge substrate, wherein the lattice of (Al) GalnP layer and p-type Ge substrate matched each other.
[0076] An n-type GaAs or n -type GalnP is then formed as the N-type layer of the first tunnel junction, and a p-type (Al) GaAs material is formed as the P-type layer of the first tunnel junction. The N-type and P-type dopings are doped with Si and C, respectively.
[0077] A DBR reflective layer of AlxGaAs/InGaAs is further formed, in which 0.5 £ x £ l. The DBR layer is composed of n units of AlxGaAs/InGaAs, wherein the optical thickness of each layer of material is about 1/4 wavelength of a center reflecting light, and wherein n is greater than 5 and less than 25.
[0078] The second subcell comprises, in an order from bottom to top, a back field layer, a p- type doped InGaAs layer as base region, an n-type doped InGaAs layer as emission region, and a window layer. The back field layer comprises GalnP or AlGaAs material, and the window layer comprises AlGalnP or AllnP material.
[0079] n-Type GaAs or n-type GalnP is formed as the N-type layer of the second tunnel junction; and p-type (Al) GaAs is formed as the P-type layer of the second tunnel junction. The N -type and P -type dopings are doped with Si and C, respectively.
[0080] The third subcell comprises, in an order from bottom to top, an AlGalnP back field layer, a p-type doped AlGalnP or GalnP layer as base region, an n-type doped AlGalnP or GalnP layer as emission region, and an AllnP window layer.
[0081] Finally, a GaAs or InGaAs layer is formed as an N-type contact layer that forms an ohmic contact with the electrode. [0082] FIG. 3 shows the comparison data regarding the wavelength uniformity of the normal DBR (the average lattice parameter of DBR is substantially the same as the lattice parameter of the middle solar subcell) and the DBR of the present disclosure (the average lattice parameter of DBR is greater than the lattice parameter of the middle solar subcell). FIG. 3 clear demonstrated the significant improvement of the new DBR of the present disclosure for the wavelength uniformity for the top solar subcell. The normal DBR provided uneven wavelengths between a wavelength range of about 654 nm to about 664 nm. However, the DBR of the present disclosure provided almost constant wavelength around 656 nm. Such a improvement is clearly unexpected.
[0083] In summary, the present disclosure provides a novel three-junction GaAs solar cells and the manufacturing method thereof. Based on the concept of current DBR layer, the present disclosure introduces or increases the Indium (In) component in the DBR layer in such a manner that the lattice parameter of the DBR layer is greater than that of the middle subcell, for example, an InO.OlGaAs middle subcell. Therefore, a compressive stress generated by the lattice mismatch is introduced to balance the tensile stress caused by the thermal mismatch, thereby improving the wavelength and doping uniformity of the middle and top subcells to improve battery performance.
[0084] The technical solution of the present disclosure balances the tensile stress caused by the thermal mismatch by increasing the lattice of the DBR reflective layer to introduce the compressive stress generated by the lattice mismatch, so that the wafer is smooth with neither concave nor convex when growing the middle and the top subcells. The smooth feature of the wafer improves the temperature uniformity on the entire wafer, thereby improving the wavelength uniformity and doping uniformity of the middle and top subcells and improving the battery performance.
[0085] Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed here. This application is intended to cover any variations, uses, or adaptations of the invention following the general principles thereof and including such departures from the present disclosure as come within known or customary practice in the art. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims.
[0086] It will be appreciated that the present invention is not limited to the exact examples described above and illustrated in the accompanying drawings, and that various modifications and changes can be made without departing from the scope thereof. It is intended that the scope of the invention only be limited by the appended claims.

Claims

What is claimed is:
1. A three -junction solar cell comprising:
a first bottom solar subcell;
a second middle solar subcell;
a third top solar subcell;
a distributed Bragg reflector (DBR) layer, wherein the distributed Bragg reflector (DBR) layer is positioned immediately below the second middle solar subcell, and the distributed Bragg reflector (DBR) layer has an average lattice parameter greater than the lattice parameter of the second middle solar subcell;
a first tunnel junction positioned between the first bottom solar subcell and the distributed Bragg reflector (DBR) layer; and
a second tunnel junction positioned between the second middle solar subcell and the third top solar subcell;
wherein each of the three solar subcells is substantially lattice matched to each of the other solar subcells.
2. The three -junction solar cell of claim 1, wherein the distributed Bragg reflector (DBR) layer comprises n repeating units of AlxInyGaAs/InzGaAs reflection layers, wherein 5<n<25, 0.5<x<l, 0.0l<y<0.05, and 0.0l<z<0.05.
3. The three-junction solar cell of claim 2, wherein the n repeating units of AlxInyGaAs/InzGaAs reflection layers are configured such that said InzGaAs is deposited on top of said AlxInyGaAs in each unit of the AlxInyGaAs/InzGaAs reflection layer.
4. The three-junction solar cell of claim 2, wherein each AlxInyGaAs/InzGaAs reflection layer has an optical thickness of 1/4 wavelength of a center reflecting light.
5. The three-junction solar cell of claim 1, wherein the first bottom solar subcell is a Ge solar subcell.
6. The three -junction solar cell of claim 1, wherein the second middle solar subcell is an InGaAs solar subcell.
7. The three-junction solar cell of claim 1, wherein the third top solar subcell is a GalnP solar subcell.
8. The three-junction solar cell of claim 1, wherein the third top solar subcell is an AlGalnP solar subcell.
9. The three -junction solar cell of claim 1, wherein the second middle solar subcell is an Ino.oiGaAs solar subcell, and the distributed Bragg reflector (DBR) layer has an average lattice parameter greater than the lattice parameter of Ino.oiGaAs solar subcell.
10. The three -junction solar cell of claim 1, wherein the first bottom solar subcell is Ge solar subcell; the second middle solar subcell is an InGaAs solar subcell; and the third top solar subcell is a GalnP solar subcell.
11. The three -junction solar cell of claim 1, wherein the first bottom solar subcell is Ge solar subcell; the second middle solar subcell is an InGaAs solar subcell; and the third top solar subcell is an AlGalnP solar subcell.
12. The three -junction solar cell of claim 1, wherein the first bottom solar subcell is Ge solar subcell; the second middle solar subcell is an Ino.oiGaAs solar subcell; the third top solar subcell is an AlGalnP solar subcell, wherein the distributed Bragg reflector (DBR) layer has an average lattice parameter greater than the lattice parameter of the second middle solar subcell.
13. A method of preparing a three-junction solar cell comprising:
forming a first bottom solar subcell;
forming a first junction tunnel;
forming a distributed Bragg reflector (DBR) layer;
forming a second middle solar subcell;
forming a second junction tunnel; and
forming a third top solar subcell;
wherein the method of forming the three-junction solar cell is Metal-Organic Chemical Vapour Deposition (MOCVD) or Molecular Beam Epitaxy (MBE), wherein the distributed Bragg reflector (DBR) layer has an average lattice parameter greater than the lattice parameter of the second middle solar subcell, wherein each of the three solar subcells is substantially lattice matched to each of the other solar subcells.
14. The method of claim 13, wherein the distributed Bragg reflector (DBR) layer comprises n repeating units of AlxInyGaAs/InzGaAs reflection layers, wherein 5<n<25, 0.5<x<l, 0.0l<y<0.05, and 0.0l<z<0.05.
15. The method of claim 13, wherein the first bottom solar subcell is Ge solar subcell; the second middle solar subcell is an InGaAs solar subcell; and the third top solar subcell is a GalnP solar subcell.
16. The method of claim 13, wherein the first bottom solar subcell is Ge solar subcell; the second middle solar subcell is an InGaAs solar subcell; and the third top solar subcell is an AlGalnP solar subcell.
17. The method of claim 13, wherein the first bottom solar subcell is Ge solar subcell; the second middle solar subcell is an Ino.oiGaAs solar subcell; and the third top solar subcell is a GalnP solar subcell or an AlGalnP solar subcell.
18. The method of claim 16, wherein the second middle solar subcell is an Ino.oiGaAs solar subcell, and the distributed Bragg reflector (DBR) layer has an average lattice parameter greater than the lattice parameter of Ino.oiGaAs solar subcell.
19. The method of claim 14, wherein the n repeating units of AlxInyGaAs/InzGaAs reflection layers are configured such that said InzGaAs is deposited on top of said ALhiyGaAs in each unit of the AlxInyGaAs/InzGaAs reflection layer.
20. The method of claim 14, wherein each AlxInyGaAs/InzGaAs reflection layer has an optical thickness of 1/4 wavelength of a center reflecting light.
21. The method of claim 14, wherein growth pause time for hetero interface between AlxInyGaAs layer and InzGaAs is between 2-5 s.
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CN112736157A (en) * 2021-04-02 2021-04-30 南昌凯迅光电有限公司 Three-junction gallium arsenide solar cell and preparation method thereof
CN112736157B (en) * 2021-04-02 2021-07-20 南昌凯迅光电有限公司 Three-junction gallium arsenide solar cell and preparation method thereof
CN115863466A (en) * 2023-03-02 2023-03-28 南昌凯迅光电股份有限公司 Gallium arsenide solar cell chip and preparation method thereof

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