CN107527967B - High-efficiency three-junction cascading gallium arsenide solar cell with anti-radiation structure and manufacturing method thereof - Google Patents
High-efficiency three-junction cascading gallium arsenide solar cell with anti-radiation structure and manufacturing method thereof Download PDFInfo
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title claims abstract description 67
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 66
- 230000003471 anti-radiation Effects 0.000 title claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 230000005641 tunneling Effects 0.000 claims abstract description 55
- 239000000463 material Substances 0.000 claims abstract description 23
- 101000775252 Arabidopsis thaliana NADPH-dependent oxidoreductase 2-alkenal reductase Proteins 0.000 claims abstract 10
- 101100442490 Artemisia annua DBR2 gene Proteins 0.000 claims abstract 10
- 101001041031 Homo sapiens Lariat debranching enzyme Proteins 0.000 claims abstract 10
- 102100021155 Lariat debranching enzyme Human genes 0.000 claims abstract 10
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 54
- 239000002019 doping agent Substances 0.000 claims description 36
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 24
- 230000005684 electric field Effects 0.000 claims description 18
- 230000006911 nucleation Effects 0.000 claims description 18
- 238000010899 nucleation Methods 0.000 claims description 18
- 230000009286 beneficial effect Effects 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 10
- 238000009792 diffusion process Methods 0.000 claims description 7
- 230000007704 transition Effects 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 230000031700 light absorption Effects 0.000 abstract description 2
- 238000005457 optimization Methods 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- H01L31/0725—Multiple junction or tandem solar cells
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- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
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- Y02E10/544—Solar cells from Group III-V materials
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Abstract
The invention discloses a high-efficiency three-junction cascading gallium arsenide solar cell with an anti-radiation structure, which comprises a P-type contact layer, a bottom cell, a first tunneling junction, a DBR1, a middle cell, a second tunneling junction, a DBR2, a top cell and an N-type contact layer. The invention also discloses a manufacturing method of the high-efficiency three-junction cascading gallium arsenide solar cell with the anti-radiation structure. According to the invention, the cell adopts InxGa1-xAs material, the forbidden bandwidth is 1.1-1.4 eV, the top cell adopts GayIn1-yP material, the forbidden bandwidth is 1.6-1.9 eV, stress and dislocation are released and filtered in the form of DBR1 and DBR2, so that the warping condition of an epitaxial wafer is effectively solved, the thickness and doping uniformity of epitaxial growth are improved, and the yield and performance of the solar cell are improved; on the other hand, due to the transitional form of the DBR1 and the DBR2, the solar light absorption of the battery can be improved, and the irradiation resistance can be improved.
Description
Technical Field
The invention belongs to the technical field of high-efficiency solar cells, and particularly relates to a high-efficiency three-junction cascading gallium arsenide solar cell with an anti-radiation structure.
Background
With the continuous progress of aerospace technology, functions of a spacecraft are more and more complex, requirements on power supply load power are higher and higher requirements on performance of a solar battery, particularly photoelectric conversion efficiency, are required. Gallium arsenide (GaAs) three-junction solar cells have been widely used in the space field as main power sources of space vehicles due to their advantages of high conversion efficiency, long service life, excellent reliability and the like. The currently applied GaAs three-junction solar cell structure grown by the Ge substrate is GaInP/GaAs/Ge, is a lattice-matched cell structure, has the highest efficiency of nearly 30% (AM 0), and is difficult to further improve due to the limitation of band gap mismatch. In contrast, the GaAs triple-junction solar cell with the matched band gap can effectively reduce the solar energy waste problem caused by the unmatched band gap, and has obvious advantages in further improving the conversion efficiency of the triple-junction solar cell.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide the high-efficiency three-junction cascading gallium arsenide solar cell with the anti-radiation structure, which has the advantages of reasonable structure, simple process, reliable performance and low production cost.
The technical scheme of the invention is as follows:
the high-efficiency three-junction cascading gallium arsenide solar cell with the anti-radiation structure is characterized by comprising a P-type contact layer, a bottom cell, a first tunneling junction, a DBR1 (first group of distributed Bragg reflectors) with a strain structure, a middle cell, a second tunneling junction, a DBR2 (second group of distributed Bragg reflectors) with a strain structure, a top cell and an N-type contact layer;
the bottom battery, the middle battery and the top battery are three-junction sub-batteries which are sequentially arranged from bottom to top;
the bottom battery and the middle battery are connected through a first tunneling junction;
a DBR1 is further arranged between the first tunneling junction and the middle battery;
the middle battery is connected with the top battery through a second tunneling junction;
a DBR2 is further arranged between the second tunneling junction and the top battery;
the lower layer of the bottom battery is also provided with a P-type contact layer, and the P-type contact layer is a P-type Ge substrate;
the upper layer of the top battery is also provided with an N-type contact layer, and the N-type contact layer is a GaAs window layer made of GaAs materials.
As optimization, the bottom cell sequentially comprises a P-Ge base region, an N-Ge emitter region and a GaInP nucleation layer from bottom to top; passing PH over the surface of the P-type contact layer 3 The N-Ge emitter region and the GaInP nucleation layer are formed by diffusion, the P-Ge base region is a transition region of the P-type contact layer and the N-Ge emitter region, and the P-Ge base region is used as a base region of the bottom cell; the thickness of the N-Ge emission region is 0.1-0.3 mu m, and the thickness of the GaInP nucleation layer is 0.03-0.10 mu m; the forbidden bandwidth of the bottom cell is 0.67eV;
as optimization, the first tunneling junction is N ++ GaAs/P ++ GaAs, wherein N ++ GaAs layer and P ++ The thickness of the GaAs layers is 0.01-0.04 mu m, N ++ The doping agent of GaAs is one or more of Te, se and Si, and the doping concentration is 3×10 18 ～1×10 19 /cm 3 ；P ++ The doping agent of GaAs is one or more of Mg, zn and C, and the doping concentration is 2×10 19 ～5×10 19 /cm 3 ；
As optimization, an InGaAs buffer layer is arranged between the first tunneling junction and the bottom cell, and the thickness of the InGaAs buffer layer is 0.5-1.5 mu m;
as optimization, the DBR1 (first distributed Bragg reflector) consists of 10-30 pairs of InAlAs/InGaAs structures, wherein In each adjacent pair of InAlAs/InGaAs structures, the In molar composition In InGaAs is increased stepwise, the gradient is 1% -3%, the initial In molar composition is 1%, the In molar composition In InAlAs is increased stepwise, the gradient is 1% -3%, and the initial In molar composition is 0.5%; in each pair of InAlAs/InGaAs structures, the thicknesses of the InAlAs structures and the InGaAs structures are calculated according to lambda/4 n, wherein lambda is more than or equal to 850nm and less than or equal to 1200nm, and n is the refractive index of the corresponding AlGaAs or InGaAs material;
as optimization, the middle battery sequentially comprises InAlAs back electric field and In from bottom to top x Ga 1-x As base region, in x Ga 1- x An As emitter region, alInP or GaInP window layer composition, wherein In x Ga 1-x As base region and In x Ga 1-x The range of the In component x In the As emission region is 0.01-0.22; the forbidden bandwidth of the middle battery is 1.1-1.4 eV, which is beneficial to the middle battery to absorb more sunlight and improve the current density of the middle battery; the thickness of the InxGa1-xAs base region is 1.5-2.5 mu m, the thickness of the InxGa1-xAs emitting region is 0.1-0.2 mu m, and the thickness of the AlInP or GaInP window layer is 0.05-0.15 mu m; the AlInP or GaInP window layer is an AlInP window layer or a GaInP window layer;
as optimization, the second tunneling junction is N ++ GaInP/P ++ AlGaAs, wherein N ++ GaInP layer and P ++ The thickness of AlGaAs layers is 0.01-0.04 μm, N ++ The GaInP dopant is one or more of Te, se and Si, and has a doping concentration of 3×10 18 ～1×10 19 /cm 3 ；P ++ The AlGaAs dopant is one or more of Mg, zn and C, and the doping concentration is 2×10 19 ～5×10 19 /cm 3 ；
As optimization, the DBR2 (second distributed bragg reflector) is composed of 10-30 pairs of AlInP/AlGaInP structures, wherein the lattice constants of the first pair of AlInP/AlGaInP structures and the middle cell are matched and consistent, then the In mole composition of each adjacent pair of AlInP/AlGaInP structures is reduced according to steps, the In mole composition gradient In AlInP is 1% -3%, and the In mole composition gradient In AlGaInP is 1% -3%; in each pair of AlInP/AlGaInP structures, the thicknesses of the AlInP structures and the AlGaInP structures are calculated according to lambda/4 n, wherein lambda is more than or equal to 650nm and less than or equal to 800nm, and n is the refractive index of the corresponding AlInP or AlGaInP material;
as optimization, the top battery sequentially comprises AlGaInP back electric field and Ga from bottom to top y In 1-y P base region, ga y In 1- y P emitter and AlInP window layer, wherein Ga y In 1-y P base region and Ga y In 1-y The range of the component y of Ga in the P emission region is 0.30-0.50, the forbidden bandwidth of the top cell is 1.6-1.9 eV, the back electric field thickness of AlGaInP is 0.02-0.15 mu m, ga y In 1-y P base region and Ga y In 1-y The total thickness of the P emitting region is 0.5-1 mu m, and the thickness of the AlInP window layer is 0.03-0.05 mu m, which is beneficial to the top battery to absorb more sunlight and improve the current density of the top battery;
as optimization, the P-type contact layer is a substrate of P-type Ge, the doping agent is Ga, and the doping concentration is 1 multiplied by 10 18 ～10×10 18 /cm 3 ；
As optimization, the N-type contact layer is a GaAs window layer made of GaAs material, the growth thickness is 0.3-0.6 mu m, the doping agent is one or a combination of Te, se and Si, and the doping concentration is 3 multiplied by 10 18 ～9× 10 18 /cm 3 。
The invention also comprises a manufacturing method of the high-efficiency three-junction cascading gallium arsenide solar cell with the anti-radiation structure, which comprises the following steps,
(1) Preparing a bottom battery: the bottom cell comprises a P-Ge base region, an N-Ge emitter region and a GaInP nucleation layer from bottom to top in sequence; through PH on the surface of the P-type contact layer 3 The N-Ge emitter region and the GaInP nucleation layer are formed by diffusion, the P-Ge base region is a transition region of the P-type contact layer and the N-Ge emitter region, and the P-Ge base region is used as a base region of the bottom cell; the thickness of the N-Ge emission region is 0.1-0.3 mu m, and the thickness of the GaInP nucleation layer is 0.03-0.10 mu m; the forbidden bandwidth of the bottom cell is 0.67eV; the P-type contact layer is a substrate of P-type Ge, the doping agent is Ga, and the doping concentration is 1 multiplied by 10 18 ～10×10 18 /cm 3 ；
(2) Preparing a first tunneling junction: growing a first tunneling junction on the surface of the InGaAs buffer layer, wherein the first tunneling junction is N ++ GaAs/P ++ GaAs, wherein N ++ GaAs layer and P ++ The thickness of the GaAs layers is 0.01-0.04 mu m, N ++ The doping agent of GaAs is one or more of Te, se and Si, and the doping concentration is 3×10 18 ～1×10 19 /cm 3 ；P ++ The doping agent of GaAs is one or more of Mg, zn and C, and the doping concentration is 2×10 19 ～5×10 19 /cm 3 ；
(3) DBR1 was prepared: growing a DBR1 on the surface of the first tunneling junction, wherein the DBR1 (a first distributed Bragg reflector with a strain structure) consists of 10-30 pairs of InAlAs/InGaAs structures, wherein In each adjacent pair of InAlAs/InGaAs structures, the molar composition of In InGaAs is increased stepwise, the gradient is 1-3%, the initial molar composition of In is 1%, the molar composition of In InAlAs is increased stepwise, the gradient is 1-3%, and the initial molar composition of In is 0.5%; in each pair of InAlAs/InGaAs structures, the thicknesses of the InAlAs structures and the InGaAs structures are calculated according to lambda/4 n, wherein lambda is more than or equal to 850nm and less than or equal to 1200nm, and n is the refractive index of the corresponding AlGaAs or InGaAs material;
(4) The battery is prepared by the following steps: a middle cell growing on the surface of the DBR1, wherein the middle cell comprises an InAlAs back electric field and In from bottom to top x Ga 1-x As base region, in x Ga 1-x An As emitter region, alInP or GaInP window layer composition, wherein In x Ga 1- x As base region and In x Ga 1-x The range of the In component x In the As emission region is 0.01-0.22; the forbidden bandwidth of the middle battery is 1.1-1.4 eV, which is beneficial to the middle battery to absorb more sunlight and improve the current density of the middle battery; the thickness of the InxGa1-xAs base region is 1.5-2.5 mu m, the thickness of the InxGa1-xAs emitting region is 0.1-0.2 mu m, and the thickness of the AlInP or GaInP window layer is 0.05-0.15 mu m; the AlInP or GaInP window layer is an AlInP window layer or a GaInP window layer;
(5) Preparing a second tunneling junction: growing a second tunneling junction on the surface of the middle battery, wherein the second tunneling junction is N ++ GaInP/P ++ AlGaAs, wherein N ++ GaInP layer and P ++ The thickness of AlGaAs layers is 0.01-0.04 μm, N ++ The GaInP dopant is one or more of Te, se and Si, and has a doping concentration of 3×10 18 ～1×10 19 /cm 3 ；P ++ The AlGaAs dopant is one or more of Mg, zn and C, and the doping concentration is 2×10 19 ～5×10 19 /cm 3 ；
(6) DBR2 was prepared: growing a DBR2 on the surface of the second tunneling junction, wherein the DBR2 (a second distributed Bragg reflector with a strain structure) consists of 10-30 pairs of AlInP/AlGaInP structures, wherein the lattice constants of the first pair of AlInP/AlGaInP structures are matched with those of the middle cell, the In mole composition of each adjacent pair of AlInP/AlGaInP structures is reduced according to steps, the In mole composition gradient In the AlInP is 1-3%, and the In mole composition gradient In the AlGaInP is 1-3%; in each pair of AlInP/AlGaInP structures, the thicknesses of the AlInP structures and the AlGaInP structures are calculated according to lambda/4 n, wherein lambda is more than or equal to 650nm and less than or equal to 800nm, and n is the refractive index of the corresponding AlInP or AlGaInP material;
(7) Preparing a top battery: growing a top cell on the surface of the DBR2, wherein the top cell sequentially comprises an AlGaInP back electric field and Ga from bottom to top y In 1-y P base region, ga y In 1-y P emitter and AlInP window layer, wherein Ga y In 1-y P base region and Ga y In 1-y The range of the component y of Ga in the P emission region is 0.30-0.50, the forbidden band width of the top cell is 1.6-1.9 eV, the back electric field thickness of AlGaInP is 0.02-0.15 mu m, ga y In 1-y P base region and Ga y In 1-y The total thickness of the P emission region is 0.5-1 mu m, and the thickness of the AlInP window layer is 0.03-0.05 mu m, so that the top battery is beneficial to absorbing more sunlight and improving the current density of the top battery;
(8) Preparing an N-type contact layer: growing an N-type contact layer on the surface of the top battery, wherein the N-type contact layer is a GaAs window layer made of GaAs material, the growth thickness is 0.3-0.6 mu m, the doping agent is one or a combination of Te, se and Si, and the doping concentration is 3 multiplied by 10 18 ～9×10 18 /cm 3 。
As an optimization, preparing an InGaAs buffer layer after the step (1): and growing an InGaAs buffer layer on the surface of the bottom battery, wherein the thickness of the InGaAs buffer layer is 0.5-1.5 mu m.
The battery of the invention comprises a P-type contact layer and a pH-type contact layer 3 A diffusion formed bottom cell, a first tunneling junction, DBR1 (first set of bragg reflectors with strained structures), a middle cell, a second tunneling junction, DBR2 (second set of bragg reflectors with strained structures), a top cell, and an N-type contact layer. In the invention, the InxGa1-xAs material is adopted in the middle battery, the forbidden bandwidth is 1.1-1.4 eV, the GayIn1-yP material is adopted in the top battery, the forbidden bandwidth is 1.6-1.9 eV, and the stress and dislocation are released and filtered in the forms of DBR1 and DBR2, so that the conventional direct growth buffer layer can be greatly improvedThe problem of incomplete stress release is solved, the warping condition of the epitaxial wafer is effectively solved, the thickness of epitaxial growth and the uniformity of doping are improved, and the yield and the performance of the solar cell are improved. On the other hand, due to the transitional form of the DBR1 and the DBR2, the solar light absorption of the battery can be improved, and the irradiation resistance can be improved.
Drawings
FIG. 1 is a schematic diagram of a GaAs solar cell of the present invention
Detailed Description
The following examples are intended to further illustrate the invention, which may take many different forms, and are merely illustrative and should not be construed as being limited to the embodiments set forth herein.
Example 1
A high-efficiency three-junction cascading gallium arsenide solar cell with an anti-radiation structure comprises a P-type contact layer, a bottom cell, a first tunneling junction, a DBR1 (first group of distributed Bragg reflectors) with a strain structure, a middle cell, a second tunneling junction, a DBR2 (second group of distributed Bragg reflectors) with a strain structure, a top cell and an N-type contact layer;
the bottom battery, the middle battery and the top battery are three-junction sub-batteries which are sequentially arranged from bottom to top;
the bottom battery sequentially comprises a P-Ge base region, an N-Ge emitter region and a GaInP nucleation layer from bottom to top; passing PH over the surface of the P-type contact layer 3 The N-Ge emitter region and the GaInP nucleation layer are formed by diffusion, the P-Ge base region is a transition region of the P-type contact layer and the N-Ge emitter region, and the P-Ge base region is used as a base region of the bottom cell; the thickness of the N-Ge emission region is 0.1-0.3 mu m, and the thickness of the GaInP nucleation layer is 0.03-0.10 mu m; the forbidden bandwidth of the bottom cell is 0.67eV;
the bottom battery and the middle battery are connected through a first tunneling junction;
an InGaAs buffer layer is arranged between the first tunneling junction and the bottom cell, and the thickness of the InGaAs buffer layer is 0.5-1.5 mu m;
the first tunneling junction is N ++ GaAs/P ++ GaAs, wherein N ++ GaAs layer and P ++ The thickness of the GaAs layers is 0.01-0.04 mu m, N ++ The doping agent of GaAs is one or more of Te, se and Si, and the doping concentration is 3×10 18 ～1×10 19 /cm 3 ；P ++ The doping agent of GaAs is one or more of Mg, zn and C, and the doping concentration is 2×10 19 ～5×10 19 /cm 3 ；
A DBR1 is further arranged between the first tunneling junction and the middle battery;
the DBR1 (first distributed Bragg reflector) consists of 10-30 pairs of InAlAs/InGaAs structures, wherein In each adjacent pair of InAlAs/InGaAs structures, the In molar composition In InGaAs is increased stepwise, the gradient is 1-3%, the initial In molar composition is 1%, the In molar composition In InAlAs is increased stepwise, the gradient is 1-3%, and the initial In molar composition is 0.5%; in each pair of InAlAs/InGaAs structures, the thicknesses of the InAlAs structures and the InGaAs structures are calculated according to lambda/4 n, wherein lambda is more than or equal to 850nm and less than or equal to 1200nm, and n is the refractive index of the corresponding AlGaAs or InGaAs material;
the middle battery sequentially comprises InAlAs back electric field and In from bottom to top x Ga 1-x As base region, in x Ga 1-x An As emitter region, alInP or GaInP window layer composition, wherein In x Ga 1-x As base region and In x Ga 1-x The range of the In component x In the As emission region is 0.01-0.22; the forbidden bandwidth of the middle battery is 1.1-1.4 eV, which is beneficial to the middle battery to absorb more sunlight and improve the current density of the middle battery; the thickness of the InxGa1-xAs base region is 1.5-2.5 mu m, the thickness of the InxGa1-xAs emitting region is 0.1-0.2 mu m, and the thickness of the AlInP or GaInP window layer is 0.05-0.15 mu m; the AlInP or GaInP window layer is an AlInP window layer or a GaInP window layer;
the middle battery is connected with the top battery through a second tunneling junction;
the second tunneling junction is N ++ GaInP/P ++ AlGaAs, wherein N ++ GaInP layer and P ++ The thickness of AlGaAs layers is 0.01-0.04 μm, N ++ The GaInP dopant is one or more of Te, se and Si, and has a doping concentration of 3×10 18 ～1×10 19 /cm 3 ；P ++ The AlGaAs dopant is one or more of Mg, zn and C, and the doping concentration is 2×10 19 ～5×10 19 /cm 3 ；
A DBR2 is further arranged between the second tunneling junction and the top battery;
the DBR2 (second distributed Bragg reflector) is composed of 10-30 pairs of AlInP/AlGaInP structures, wherein the lattice constants of the first pair of AlInP/AlGaInP structures and the middle cell are matched and consistent, then the In mole components of each adjacent pair of AlInP/AlGaInP structure structures are reduced according to steps, the In mole component gradient In the AlInP is 1-3%, and the In mole component gradient In the AlGaInP is 1-3%; in each pair of AlInP/AlGaInP structures, the thicknesses of the AlInP structures and the AlGaInP structures are calculated according to lambda/4 n, wherein lambda is more than or equal to 650nm and less than or equal to 800nm, and n is the refractive index of the corresponding AlInP or AlGaInP material;
the top battery sequentially comprises AlGaInP back electric field and Ga from bottom to top y In 1-y P base region, ga y In 1-y P emitter and AlInP window layer, wherein Ga y In 1-y P base region and Ga y In 1-y The range of the component y of Ga in the P emission region is 0.30-0.50, the forbidden band width of the top cell is 1.6-1.9 eV, the back electric field thickness of AlGaInP is 0.02-0.15 mu m, ga y In 1-y P base region and Ga y In 1-y The total thickness of the P emission region is 0.5-1 mu m, and the thickness of the AlInP window layer is 0.03-0.05 mu m, so that the top battery is beneficial to absorbing more sunlight, and the current density of the top battery is improved;
the lower layer of the bottom battery is also provided with a P-type contact layer, and the P-type contact layer is a P-type Ge substrate; the doping agent of the P-type Ge substrate is Ga, and the doping concentration is 1 multiplied by 10 18 ～10×10 18 /cm 3 ；
The upper layer of the top battery is also provided with an N-type contact layer, the N-type contact layer is a GaAs window layer made of GaAs material, the growth thickness of the GaAs window layer is 0.3-0.6 mu m, the doping agent is one or a combination of more of Te, se and Si, and the doping concentration is 3 multiplied by 10 18 ～9×10 18 /cm 3 。
Example 2
In this example, MOCVD (Metal Organic Chemical Vapor Deposition ) was used for each layer.
The method for manufacturing the high-efficiency three-junction cascade gallium arsenide solar cell with the irradiation-resistant structure in the embodiment 1 comprises the following steps,
(1) Preparing a bottom battery: the bottom cell comprises a P-Ge base region, an N-Ge emitter region and a GaInP nucleation layer from bottom to top in sequence; through PH on the surface of the P-type contact layer 3 The N-Ge emitter region and the GaInP nucleation layer are formed by diffusion, the P-Ge base region is a transition region of the P-type contact layer and the N-Ge emitter region, and the P-Ge base region is used as a base region of the bottom cell; the thickness of the N-Ge emission region is 0.1-0.3 mu m, and the thickness of the GaInP nucleation layer is 0.03-0.10 mu m; the forbidden bandwidth of the bottom cell is 0.67eV; the P-type contact layer is a substrate of P-type Ge, the doping agent is Ga, and the doping concentration is 1 multiplied by 10 18 ～10×10 18 /cm 3 ；
(2) Preparation of InGaAs buffer layer: and growing an InGaAs buffer layer on the surface of the bottom battery, wherein the thickness of the InGaAs buffer layer is 0.5-1.5 mu m.
(3) Preparing a first tunneling junction: growing a first tunneling junction on the surface of the InGaAs buffer layer, wherein the first tunneling junction is N ++ GaAs/P ++ GaAs, wherein N ++ GaAs layer and P ++ The thickness of the GaAs layers is 0.01-0.04 mu m, N ++ The doping agent of GaAs is one or more of Te, se and Si, and the doping concentration is 3×10 18 ～1×10 19 /cm 3 ；P ++ The doping agent of GaAs is one or more of Mg, zn and C, and the doping concentration is 2×10 19 ～5×10 19 /cm 3 ；
(4) DBR1 was prepared: growing a DBR1 on the surface of the first tunneling junction, wherein the DBR1 (a first distributed Bragg reflector with a strain structure) consists of 10-30 pairs of InAlAs/InGaAs structures, wherein In each adjacent pair of InAlAs/InGaAs structures, the molar composition of In InGaAs is increased stepwise, the gradient is 1-3%, the initial molar composition of In is 1%, the molar composition of In InAlAs is increased stepwise, the gradient is 1-3%, and the initial molar composition of In is 0.5%; in each pair of InAlAs/InGaAs structures, the thicknesses of the InAlAs structures and the InGaAs structures are calculated according to lambda/4 n, wherein lambda is more than or equal to 850nm and less than or equal to 1200nm, and n is the refractive index of the corresponding AlGaAs or InGaAs material;
(5) The battery is prepared by the following steps: a middle cell growing on the surface of the DBR1, wherein the middle cell comprises an InAlAs back electric field and In from bottom to top x Ga 1-x As base region, in x Ga 1-x An As emitter region, alInP or GaInP window layer composition, wherein In x Ga 1- x As base region and In x Ga 1-x The range of the In component x In the As emission region is 0.01-0.22; the forbidden bandwidth of the middle battery is 1.1-1.4 eV, which is beneficial to the middle battery to absorb more sunlight and improve the current density of the middle battery; the thickness of the InxGa1-xAs base region is 1.5-2.5 mu m, the thickness of the InxGa1-xAs emitting region is 0.1-0.2 mu m, and the thickness of the AlInP or GaInP window layer is 0.05-0.15 mu m; the AlInP or GaInP window layer is an AlInP window layer or a GaInP window layer;
(6) Preparing a second tunneling junction: growing a second tunneling junction on the surface of the middle battery, wherein the second tunneling junction is N ++ GaInP/P ++ AlGaAs, wherein N ++ GaInP layer and P ++ The thickness of AlGaAs layers is 0.01-0.04 μm, N ++ The GaInP dopant is one or more of Te, se and Si, and has a doping concentration of 3×10 18 ～1×10 19 /cm 3 ；P ++ The AlGaAs dopant is one or more of Mg, zn and C, and the doping concentration is 2×10 19 ～5×10 19 /cm 3 ；
(7) DBR2 was prepared: growing a DBR2 on the surface of the second tunneling junction, wherein the DBR2 (a second distributed Bragg reflector with a strain structure) consists of 10-30 pairs of AlInP/AlGaInP structures, wherein the lattice constants of the first pair of AlInP/AlGaInP structures are matched with those of the middle cell, the In mole composition of each adjacent pair of AlInP/AlGaInP structures is reduced according to steps, the In mole composition gradient In the AlInP is 1-3%, and the In mole composition gradient In the AlGaInP is 1-3%; in each pair of AlInP/AlGaInP structures, the thicknesses of the AlInP structures and the AlGaInP structures are calculated according to lambda/4 n, wherein lambda is more than or equal to 650nm and less than or equal to 800nm, and n is the refractive index of the corresponding AlInP or AlGaInP material;
(8) Preparing a top battery: growing a top cell on the surface of the DBR2, wherein the top cell sequentially comprises an AlGaInP back electric field and Ga from bottom to top y In 1-y P base region, ga y In 1-y P emitter and AlInP window layer, wherein Ga y In 1-y P base region and Ga y In 1-y The range of the component y of Ga in the P emission region is 0.30-0.50, the forbidden band width of the top cell is 1.6-1.9 eV, the back electric field thickness of AlGaInP is 0.02-0.15 mu m, ga y In 1-y P base region and Ga y In 1-y The total thickness of the P emission region is 0.5-1 mu m, and the thickness of the AlInP window layer is 0.03-0.05 mu m, so that the top battery is beneficial to absorbing more sunlight and improving the current density of the top battery;
(9) Preparing an N-type contact layer: growing an N-type contact layer on the surface of the top battery, wherein the N-type contact layer is a GaAs window layer made of GaAs material, the growth thickness is 0.3-0.6 mu m, the doping agent is one or a combination of Te, se and Si, and the doping concentration is 3 multiplied by 10 18 ～9×10 18 /cm 3 。
The bottom cell forbidden bandwidth is 0.67eV, the middle cell forbidden bandwidth is 1.1-1.4 eV, and the top cell forbidden bandwidth is 1.6-1.9 eV, so that current mismatch among all sub cells is reduced, loss of solar energy is reduced, and conversion efficiency is improved; meanwhile, the adopted DBR with the strain structure can effectively release stress caused by lattice mismatch and filter dislocation introduced by lattice mismatch; the DBR can effectively reflect sunlight which is not effectively absorbed in the middle battery or the top battery, so that the absorption of each sub-battery to sunlight is improved, and meanwhile, the thickness of the middle battery and the top battery can be reduced by introducing the DBR, so that the anti-radiation performance of the middle battery and the top battery is improved.
Claims (4)
1. The high-efficiency three-junction cascading gallium arsenide solar cell with the anti-radiation structure is characterized by comprising a P-type contact layer, a bottom cell, a first tunneling junction, a DBR1 with a strain structure, a middle cell, a second tunneling junction, a DBR2 with a strain structure, a top cell and an N-type contact layer;
the bottom battery, the middle battery and the top battery are three-junction sub-batteries which are sequentially arranged from bottom to top;
the bottom battery and the middle battery are connected through a first tunneling junction;
a DBR1 is further arranged between the first tunneling junction and the middle battery;
the middle battery is connected with the top battery through a second tunneling junction;
a DBR2 is further arranged between the second tunneling junction and the top battery;
the lower layer of the bottom battery is also provided with a P-type contact layer, and the P-type contact layer is a P-type Ge substrate;
the upper layer of the top battery is also provided with an N-type contact layer;
the bottom battery sequentially comprises a P-Ge base region, an N-Ge emitter region and a GaInP nucleation layer from bottom to top; through PH on the surface of the P-type contact layer 3 The N-Ge emitter region and the GaInP nucleation layer are formed by diffusion, the P-Ge base region is a transition region of the P-type contact layer and the N-Ge emitter region, and the P-Ge base region is used as a base region of the bottom cell; the thickness of the N-Ge emission region is 0.1-0.3 mu m, and the thickness of the GaInP nucleation layer is 0.03-0.10 mu m; the forbidden bandwidth of the bottom cell is 0.67eV; the P-type contact layer is a substrate of P-type Ge, the doping agent is Ga, and the doping concentration is 1 multiplied by 10 18 ～10×10 18 /cm 3 An InGaAs buffer layer is arranged between the first tunneling junction and the bottom cell;
the first tunneling junction is N ++ GaAs/P ++ GaAs, wherein N ++ GaAs layer and P ++ The thickness of the GaAs layers is 0.01-0.04 mu m, N ++ The doping agent of GaAs is one or more of Te, se and Si, and the doping concentration is 3×10 18 ～1×10 19 /cm 3 ；P ++ The doping agent of GaAs is one or more of Mg, zn and C, and the doping concentration is 2×10 19 ～5×10 19 /cm 3 ；
The DBR1 consists of 10-30 pairs of InAlAs/InGaAs structures, wherein In mole components In InGaAs In each adjacent pair of InAlAs/InGaAs structures are increased stepwise, the gradient is 1% -3%, the initial In mole component is 1%, in mole components In InAlAs In each adjacent pair of InAlAs/InGaAs structures are increased stepwise, the gradient is 1% -3%, and the initial In mole component is 0.5%; in each pair of InAlAs/InGaAs structures, the thicknesses of the InAlAs structures and the InGaAs structures are calculated according to lambda/4 n, wherein lambda is more than or equal to 850nm and less than or equal to 1200nm, and n is the refractive index of the corresponding AlGaAs or InGaAs material;
the middle battery sequentially comprises InAlAs back electric field and In from bottom to top x Ga 1-x As base region, in x Ga 1-x An As emitter region, alInP or GaInP window layer composition, wherein In x Ga 1-x As base region and In x Ga 1-x The range of the In component x In the As emission region is 0.01-0.22; the forbidden bandwidth of the middle battery is 1.1-1.4 eV, which is beneficial to the middle battery to absorb more sunlight and improve the current density of the middle battery; in (In) x Ga 1-x The thickness of the As base region is 1.5-2.5 mu m, in x Ga 1-x The thickness of the As emitting region is 0.1-0.2 mu m, and the thickness of the AlInP or GaInP window layer is 0.05-0.15 mu m; the AlInP or GaInP window layer is an AlInP window layer or a GaInP window layer;
the second tunneling junction is N ++ GaInP/P ++ AlGaAs, wherein N ++ GaInP layer and P ++ The thickness of AlGaAs layers is 0.01-0.04 μm, N ++ The GaInP dopant is one or more of Te, se and Si, and has a doping concentration of 3×10 18 ～1×10 19 /cm 3 ；P ++ The AlGaAs dopant is one or more of Mg, zn and C, and the doping concentration is 2×10 19 ～5×10 19 /cm 3 ；
The DBR2 is composed of 10-30 pairs of AlInP/AlGaInP structures, wherein the lattice constants of the first pair of AlInP/AlGaInP structures and the middle cell are matched and consistent, then the In mole components of each adjacent pair of AlInP/AlGaInP structures are reduced according to steps, the In mole component gradient In the AlInP is 1-3%, and the In mole component gradient In the AlGaInP is 1-3%; in each pair of AlInP/AlGaInP structures, the thicknesses of the AlInP structures and the AlGaInP structures are calculated according to lambda/4 n, wherein lambda is more than or equal to 650nm and less than or equal to 800nm, and n is the refractive index of the corresponding AlInP or AlGaInP material;
the top battery is arranged from bottom to topSub-include AlGaInP back electric field, ga y In 1-y P base region, ga y In 1-y P emitter and AlInP window layer, wherein Ga y In 1-y P base region and Ga y In 1-y The range of the component y of Ga in the P emission region is 0.30-0.50, the forbidden band width of the top cell is 1.6-1.9 eV, the back electric field thickness of AlGaInP is 0.02-0.15 mu m, ga y In 1-y P base region and Ga y In 1- y The total thickness of the P emission region is 0.5-1 mu m, and the thickness of the AlInP window layer is 0.03-0.05 mu m, so that the top battery is beneficial to absorbing more sunlight and improving the current density of the top battery;
the N-type contact layer is a GaAs window layer made of GaAs material, the growth thickness is 0.3-0.6 mu m, the doping agent is one or a combination of Te, se and Si, and the doping concentration is 3 multiplied by 10 18 ～9×10 18 /cm 3 。
2. The solar cell of claim 1 wherein the InGaAs buffer layer has a thickness of 0.5 to 1.5 μm.
3. A method for manufacturing a solar cell according to any one of claim 1 to 2, comprising the steps of,
(1) Preparing a bottom battery: the bottom cell comprises a P-Ge base region, an N-Ge emitter region and a GaInP nucleation layer from bottom to top in sequence; through PH on the surface of the P-type contact layer 3 The N-Ge emitter region and the GaInP nucleation layer are formed by diffusion, the P-Ge base region is a transition region of the P-type contact layer and the N-Ge emitter region, and the P-Ge base region is used as a base region of the bottom cell; the thickness of the N-Ge emission region is 0.1-0.3 mu m, and the thickness of the GaInP nucleation layer is 0.03-0.10 mu m; the forbidden bandwidth of the bottom cell is 0.67eV; the P-type contact layer is a substrate of P-type Ge, the doping agent is Ga, and the doping concentration is 1 multiplied by 10 18 ～10×10 18 /cm 3 The method comprises the steps of carrying out a first treatment on the surface of the Growing an InGaAs buffer layer on the surface of the bottom cell;
(2) Preparing a first tunneling junction: growing a first tunneling junction on the surface of the InGaAs buffer layer, wherein the first tunneling junction is N ++ GaAs/P ++ GaAs, wherein N ++ GaAs layer and P ++ The thickness of the GaAs layers is 0.01～0.04μm，N ++ The doping agent of GaAs is one or more of Te, se and Si, and the doping concentration is 3×10 18 ～1×10 19 /cm 3 ；P ++ The doping agent of GaAs is one or more of Mg, zn and C, and the doping concentration is 2×10 19 ～5×10 19 /cm 3 ；
(3) DBR1 was prepared: growing a DBR1 on the surface of the first tunneling junction, wherein the DBR1 is composed of 10-30 pairs of InAlAs/InGaAs structures, and In each adjacent pair of InAlAs/InGaAs structures, the molar composition of In InGaAs is increased stepwise, the gradient is 1% -3%, the initial molar composition of In is 1%, the molar composition of In InAlAs is increased stepwise, the gradient is 1% -3%, and the initial molar composition of In is 0.5%; in each pair of InAlAs/InGaAs structures, the thicknesses of the InAlAs structures and the InGaAs structures are calculated according to lambda/4 n, wherein lambda is more than or equal to 850nm and less than or equal to 1200nm, and n is the refractive index of the corresponding AlGaAs or InGaAs material;
(4) The battery is prepared by the following steps: a middle cell growing on the surface of the DBR1, wherein the middle cell comprises an InAlAs back electric field and In from bottom to top x Ga 1-x As base region, in x Ga 1-x An As emitter region, alInP or GaInP window layer composition, wherein In x Ga 1-x As base region and In x Ga 1-x The range of the In component x In the As emission region is 0.01-0.22; the forbidden bandwidth of the middle battery is 1.1-1.4 eV, which is beneficial to the middle battery to absorb more sunlight and improve the current density of the middle battery; in (In) x Ga 1-x The thickness of the As base region is 1.5-2.5 mu m, in x Ga 1-x The thickness of the As emitting region is 0.1-0.2 mu m, and the thickness of the AlInP or GaInP window layer is 0.05-0.15 mu m; the AlInP or GaInP window layer is an AlInP window layer or a GaInP window layer;
(5) Preparing a second tunneling junction: growing a second tunneling junction on the surface of the middle battery, wherein the second tunneling junction is N ++ GaInP/P ++ AlGaAs, wherein N ++ GaInP layer and P ++ The thickness of AlGaAs layers is 0.01-0.04 μm, N ++ The GaInP dopant is one or more of Te, se and Si, and has a doping concentration of 3×10 18 ～1×10 19 /cm 3 ；P ++ The AlGaAs dopant is one or more of Mg, zn and C, and the doping concentration is 2×10 19 ～5×10 19 /cm 3 ；
(6) DBR2 was prepared: growing a DBR2 on the surface of the second tunneling junction, wherein the DBR2 consists of 10-30 pairs of AlInP/AlGaInP structures, the lattice constants of the first pair of AlInP/AlGaInP structures and the middle cell are matched and consistent, then the In mole composition of each adjacent pair of AlInP/AlGaInP structure structures is reduced according to steps, the In mole composition gradient In the AlInP is 1-3%, and the In mole composition gradient In the AlGaInP is 1-3%; in each pair of AlInP/AlGaInP structures, the thicknesses of the AlInP structures and the AlGaInP structures are calculated according to lambda/4 n, wherein lambda is more than or equal to 650nm and less than or equal to 800nm, and n is the refractive index of the corresponding AlInP or AlGaInP material;
(7) Preparing a top battery: growing a top cell on the surface of the DBR2, wherein the top cell sequentially comprises an AlGaInP back electric field and Ga from bottom to top y In 1-y P base region, ga y In 1-y P emitter and AlInP window layer, wherein Ga y In 1-y P base region and Ga y In 1-y The range of the component y of Ga in the P emission region is 0.30-0.50, the forbidden band width of the top cell is 1.6-1.9 eV, the back electric field thickness of AlGaInP is 0.02-0.15 mu m, ga y In 1-y P base region and Ga y In 1-y The total thickness of the P emission region is 0.5-1 mu m, and the thickness of the AlInP window layer is 0.03-0.05 mu m, so that the top battery is beneficial to absorbing more sunlight and improving the current density of the top battery;
(8) Preparing an N-type contact layer: growing an N-type contact layer on the surface of the top battery, wherein the N-type contact layer is a GaAs window layer made of GaAs material, the growth thickness is 0.3-0.6 mu m, the doping agent is one or a combination of Te, se and Si, and the doping concentration is 3 multiplied by 10 18 ～9×10 18 /cm 3 。
4. The method of claim 3, wherein the InGaAs buffer layer has a thickness of 0.5 to 1.5 μm.
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