CN104617168A - Radiation-proof three-junction cascade gallium arsenide solar cell and preparation method - Google Patents
Radiation-proof three-junction cascade gallium arsenide solar cell and preparation method Download PDFInfo
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title claims abstract description 37
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 37
- 238000002360 preparation method Methods 0.000 title claims description 8
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims abstract description 75
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 26
- 239000002253 acid Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 13
- 239000011449 brick Substances 0.000 claims description 9
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- 238000000576 coating method Methods 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 229910052717 sulfur Inorganic materials 0.000 claims description 5
- 229910052714 tellurium Inorganic materials 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 2
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- 238000006243 chemical reaction Methods 0.000 abstract description 12
- 230000005855 radiation Effects 0.000 abstract description 11
- 238000009792 diffusion process Methods 0.000 abstract description 5
- 230000009467 reduction Effects 0.000 abstract description 4
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- 238000001228 spectrum Methods 0.000 abstract description 3
- 230000003139 buffering effect Effects 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 description 10
- 238000001451 molecular beam epitaxy Methods 0.000 description 5
- 230000003595 spectral effect Effects 0.000 description 5
- 230000001360 synchronised effect Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000006059 cover glass Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000007792 gaseous phase Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003471 anti-radiation Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
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Abstract
The invention relates to a radiation-proof three-junction cascade gallium arsenide solar cell. The radiation-proof three-junction cascade gallium arsenide solar cell is that a contact layer is arranged on a top cell; a first tunnel junction is arranged between the top cell and a medium cell; a second tunnel junction, at least one layer of distributed bragg reflectors, a buffering layer and a coring layer are sequentially arranged between the medium cell and a bottom cell; a substrate is arranged below the bottom cell. According to the radiation-proof three-junction cascade gallium arsenide solar cell, the thickness of a GaInAs base area of the GaInAs medium cell is adjusted to be 1.4 to 2 microns to solve the problem of collection due to the reduction of a current carrier diffusion length caused by radiation, and therefore, the radiation resistance can be improved; meanwhile, at least one layer of distributed bragg reflectors is arranged between the GaInAs medium cell and the Ge bottom cell, so that a light path route of the spectrum corresponding to the GaInAs medium cell, in the GaInAs medium cell can be improved, the short-current density can be increased, and relatively high conversion efficiency can be remained at the end period of the work; after the test equivalent to the total radiation of all high-energy particles on a geostationary satellite on the track in 15 years, the reduction rate of the conversion efficiency is only half that of the traditional structural solar cell.
Description
Technical field
The invention belongs to gallium arsenide solar cell technical field of structures, especially a kind of Flouride-resistani acid phesphatase three ties cascade gallium arsenide solar cell and preparation method.
Background technology
Solar energy power generating is a kind of clean generation mode, it is for people to use that it changes sunlight into electric energy, tradition more often uses polysilicon and monocrystalline silicon battery, along with the development of technology, three-junction gallium arsenide solar battery obtains to be applied widely, this is because this solar cell forbidden band is wide compared with silicon, spectral response and Spectral matching ability comparatively silicon are good, and transformation efficiency is higher.
In some Special use occasions, such as: complicated severe space environment during spacecraft flies in-orbit, will be experienced, comprise high vacuum, thermal cycle, charged particle radiation, elemental oxygen, space junk and plasma environment etc., the various high energy particles that mainly magnetic field of the earth is captured of charged particle radiation wherein cause, its flux with particle energy and orbital environment parameter difference and change, i.e. conventional said model. Alan is with.Above-mentioned charged particle radiation can produce multiple crystal defect to solar cell, complex centre is caused to increase, the life-span of photo-generated carrier and diffusion length are reduced, cause the variation of solar cell electric property, and then reduce the photoelectric conversion efficiency of battery, directly affect reliability and the useful life of spacecraft operation on orbit.The solar battery surface that spacecraft uses all is coated with cover glass, this cover glass can stop the relative low energy particle being less than 0.3MeV, avoid it to the irradiation of solar battery surface, and slightly can reduce the energy of high energy particle, so the irradiation that should be noted that mainly is greater than the high energy particle of 0.3MeV.
At present, the three-junction gallium arsenide solar battery of forward growth is the solar cell the most widely that spacecraft uses, it comprises GaInP and pushes up battery, battery at the bottom of GaInAs intermediate cell and Ge, the photon of different-energy can be absorbed by the sub-battery of different energy gap, and every sub-battery has corresponding short circuit current.Usually the conversion efficiency under top battery and intermediate cell currents match condition is the highest.The In that wherein intermediate cell base is a small amount of can realize the Lattice Matching of intermediate cell and end battery.Research finds at AM0 (when intensity of solar radiation is solar energy constant, air quality is denoted as AM0) under condition, GaInAs intermediate cell pushes up the fast of the cell performance decay of battery than GaInP, the anti-radiation performance therefore how improving GaInAs intermediate cell is the matter of utmost importance needing in practical application to solve.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, provide a kind of rational in infrastructure, preparation technology is easy, the final transformation efficiency that works reduces slow a kind of Flouride-resistani acid phesphatase three and ties cascade gallium arsenide solar cell.
The technical scheme that the present invention takes is:
A kind of Flouride-resistani acid phesphatase three ties cascade gallium arsenide solar cell, comprise top battery, intermediate cell and end battery, it is characterized in that: top battery is contact layer, be the first tunnel junctions between top battery and intermediate cell, being followed successively by the second tunnel junctions, at least one deck distributed Bragg reflector, resilient coating and nucleating layer between intermediate cell and end battery, is substrate under end battery.
And, described top battery is that GaInP pushes up battery, intermediate cell is GaInAs intermediate cell, end battery is battery at the bottom of Ge, it is GaAs contact layer that GaInP pushes up on battery, it is the first tunnel junctions that GaInP pushes up between battery and GaInAs intermediate cell, and being followed successively by the second tunnel junctions, at least one deck distributed Bragg reflector, GaInAs resilient coating and GaInP nucleating layer between battery at the bottom of GaInAs intermediate cell and Ge, is Ge substrate under battery at the bottom of Ge.
And the energy gap that described GaInP pushes up battery at the bottom of battery, GaInAs intermediate cell and Ge is respectively 1.90 ± 0.05eV, 1.39 ± 0.05eV, 0.67eV.
And the difference that described GaInAs intermediate cell and GaInP push up the short-circuit current density of battery is 0 ~ 0.5mA/cm
2.
And described GaInP pushes up power brick containing the AlInP Window layer set gradually, GaInP emitter region, GaInP base and back surface field layer from top to bottom;
Described GaInAs intermediate cell comprise from top to bottom set gradually Window layer, GaInAs emitter region, GaInAs base, back surface field layer;
Described distributed Bragg reflector DBR is made up of the elementary cell in n cycle, centered by the optical thickness of every layer material reflection wavelength 1/4;
Power brick at the bottom of described Ge is containing Ge emitter region, Ge base;
N is greater than 5 and is less than 15.
And the material that described GaInP pushes up the back surface field layer of battery and GaInAs intermediate cell is Al
xga
1-xinP or AlGaAs, the material of the Window layer of described GaInAs intermediate cell is AlInP or GaInP, and the material of described elementary cell is AlAs/GaAs, Al
xga
1-xas/GaInAs, Al
xga
1-xas/AlAs, described x is greater than 0 and is less than 1.
And the thickness of the GaInAs base of described GaInAs intermediate cell is 1.4 ~ 2 microns.
Another object of the present invention is to provide the preparation method that a kind of Flouride-resistani acid phesphatase three ties cascade gallium arsenide solar cell, it is characterized in that: use mocvd method or MBE method to grow obtained finished product successively.
And the N-type foreign atom of Ge layer is A in described mocvd method
sor P, remainder layer N-type foreign atom is Si, Se, S or Te, and P type foreign atom is Zn, Mg or C.
And the N-type foreign atom of Ge layer is A in described MBE method
sor P, remainder layer N-type foreign atom is Si, Se, S, Sn or Te, and P type foreign atom is Be, Mg or C.
Advantage of the present invention and good effect are:
In the present invention, the thickness of the GaInAs base of GaInAs intermediate cell is adjusted to 1.4 ~ 2 microns, the reduction of GaInAs base thickness can be offset carrier diffusion length that irradiation causes and to be declined the collection problem caused, improve Radiation hardness, at least one deck distributed Bragg reflector is set at the bottom of GaInAs intermediate cell and Ge between battery simultaneously, improve the corresponding spectrum of GaInAs intermediate cell in the light path footpath of GaInAs intermediate cell, improve short-circuit current density, still higher conversion efficiency can be kept final period in work, the present invention is after being equivalent to the test of the synchronous satellite total irradiation of all high energy particles suffered by 15 years in-orbit, the attenuation rate of conversion efficiency is only 1/2nd of traditional structure solar cell.
Accompanying drawing explanation
Fig. 1 is the structural representation that the present invention three ties cascade gallium arsenide solar cell;
Fig. 2 is the reflectivity of distributed Bragg reflector of the present invention in 300-1800 nanometer range;
Fig. 3 is traditional structure solar cell and structure solar cell of the present invention, the battery operated initial stage and work final period in, the situation of change of battery efficiency.
Embodiment
Below in conjunction with embodiment, the present invention is further described, and following embodiment is illustrative, is not determinate, can not limit protection scope of the present invention with following embodiment.
A kind of Flouride-resistani acid phesphatase three ties cascade gallium arsenide solar cell, comprise top battery, intermediate cell and end battery, innovation of the present invention is: top battery is contact layer, be the first tunnel junctions between top battery and intermediate cell, being followed successively by the second tunnel junctions, at least one deck distributed Bragg reflector, resilient coating and nucleating layer between intermediate cell and end battery, is substrate under end battery.
In the present embodiment, described top battery is that GaInP pushes up battery, intermediate cell is GaInAs intermediate cell, end battery is battery at the bottom of Ge, it is GaAs contact layer that GaInP pushes up on battery, it is the first tunnel junctions that GaInP pushes up between battery and GaInAs intermediate cell, and being followed successively by the second tunnel junctions, at least one deck distributed Bragg reflector, GaInAs resilient coating and GaInP nucleating layer between battery at the bottom of GaInAs intermediate cell and Ge, is Ge substrate under battery at the bottom of Ge.
Wherein, the energy gap that described GaInP pushes up battery at the bottom of battery, GaInAs intermediate cell and Ge is respectively 1.90 ± 0.05eV, 1.39 ± 0.05eV, 0.67eV.The difference that described GaInAs intermediate cell and GaInP push up the short-circuit current density of battery is 0 ~ 0.5mA/cm
2.
Described GaInP pushes up power brick containing the AlInP Window layer set gradually, GaInP emitter region, GaInP base and back surface field layer from top to bottom; Described GaInAs intermediate cell comprise from top to bottom set gradually Window layer, GaInAs emitter region, GaInAs base, back surface field layer; Described distributed Bragg reflector DBR is the semiconductor structure forming high reflectance in a wavelength range, be made up of the elementary cell in n cycle, to be alternately arranged the periodic structure formed in the mode of ABAB by the material of two kinds of different refractivities, centered by the optical thickness of every layer material reflection wavelength 1/4; Power brick at the bottom of described Ge is containing Ge emitter region, Ge base; N is greater than 5 and is less than 15.
The material that described GaInP pushes up the back surface field layer of battery and GaInAs intermediate cell is Al
xga
1-xinP or AlGaAs, the material of the Window layer of described GaInAs intermediate cell is AlInP or GaInP, and the material of described elementary cell is AlAs/GaAs, Al
xga
1-xas/GaInAs, Al
xga
1-xas/AlAs, described x is greater than 0 and is less than 1.
The thickness of the GaInAs base of described GaInAs intermediate cell is 1.4 ~ 2 microns, and the doping of base can be grade doping, gently mix, non-ly mix (i layer).
Due to Synchronous-Orbiting Communication Satellite operation on orbit 15 years, the highest by irradiation level at present, for stating the Radiation hardness of solar cell, EOL (the End of life of indication, work is final) be solar cell synchronous satellite orbit in-orbit 15 years time work final, BOL (Beginning of life, work initial stage).
Or EOL can with accepting 1X10
10e/cm
2s prompt dose, 1 × 10
15e/cm
2state after the 1MeV electron irradiation of fluence, carrys out the equivalent state after experiencing Energetic particle irradiation that describes.
According to the energy gap of intermediate cell and the difference of base thickness, the optical thickness of the elementary cell of DBR is regulated to change center reflection wavelength; Light reflectance can realize by regulating the periodicity of DBR elementary cell.
First tunnel junctions comprises two-layer, is the Rotating fields and AlGaAs barrier layer that are mated by AlGaAs and GaAs respectively, also can be Rotating fields and the AlGaAs barrier layer of AlGaAs and GaInP coupling.
Second tunnel junctions comprises two-layer, is the Rotating fields and AlGaAs barrier layer that are mated by AlGaAs and GaAs respectively, also can be Rotating fields and the AlGaAs barrier layer of AlGaAs and GaInP coupling.
Embodiment 1
Mocvd method (Metal Organic Chemical Vapor Deposition, metallo-organic compound chemical gaseous phase deposition) is used in the present embodiment:
1. adopt p-type single-sided polishing Ge substrate, on Ge substrate, n-type region is formed by the method for diffusion, form battery at the bottom of Ge with p-type substrate, grow 0.05-0.2 μm of N-shaped GaInP nucleating layer successively according to the method for Lattice Matching, 0.2-1 μm of N-shaped GaInAs resilient coating, multicomponent cloth Bragg reflector (DBR), second tunnel junctions, GaInAs intermediate cell, the first tunnel junctions, GaInP pushes up battery, 0.2-1 μm of n++ GaAs contact layer.
2. wherein the second tunnel junctions comprises 0.03 μm of p++ AlGaAs layer, 0.03um n++GaInP, 0.03-0.05 μm n+AlGaAs barrier layer.
3. distributed Bragg reflector (DBR) comprises 0.03-0.1 μm of n+ Al (Ga) As and 0.03-0.1 μm of n+ Ga (In) As in 15 cycles.
4.GaInAs intermediate cell comprises 0.05-0.1 μm of n+ GaInP Window layer, 0.1-0.2 μm n+ GaInAs emitter region, 1.5 ~ 2 μm of p-GaInAs bases, 0.03-0.05 μm p+ AlGaAs back surface field layers.
5. the first tunnel junctions comprises 0.02 μm of p++AlGaAs layer, 0.02 μm of n++GaInP, 0.02-0.04 μm of n+AlGaAs barrier layer.
6.GaInP pushes up power brick containing 0.03-0.05 μm of n+ AlInP Window layer, 0.05-0.1 μm n+ GaInP emitter region, 0.5-1 μm p-GaInP base, 0.03-0.05 μm p+ AlGaInP back surface field layer.
The N-type foreign atom of Ge layer is A
sor P, remainder layer N-type foreign atom is Si, Se, S or Te, and P type foreign atom is Zn, Mg or C.
N, n+, n++ represent that doping content is ~ 1.0 × 10 respectively
17-1.0 × 10
18/ cm
2, ~ 1.0 × 10
18-9.0 × 10
18/ cm
2, ~ 9.0 × 10
18-1.0 × 10
20/ cm
2; P-, p+, p++ represent that doping content is ~ 1.0 × 10 respectively
15-1.0 × 10
18/ cm
2, ~ 1.0 × 10
18-9.0 × 10
18/ cm
2, ~ 9.0 × 10
18-1.0 × 10
20/ cm
2.
Embodiment 2
MBE (Molecular Beam Epitaxy, molecular beam epitaxy) is used: with the difference of example 1 be in the present embodiment:
1. wherein the second tunnel junctions comprises 0.03 μm of p++ AlGaAs layer, 0.03 μm of n++GaAs layer, 0.03-0.05 μm n+AlGaAs barrier layer.
2. distributed Bragg reflector (DBR) comprises 0.03-0.1 μm of n+ Al (Ga) As and 0.03-0.1 μm of n+ Ga (In) As in 5 cycles.
3.GaInAs intermediate cell comprises 0.05-0.1 μm of n+ AlInP Window layer, 0.1-0.2 μm n+ GaInAs emitter region, 1.5 ~ 2 μm of p-GaInAs bases, 0.03-0.05 μm p+ (Al
xga
1-xinP) back surface field layer.
4. the first tunnel junctions comprises 0.02 μm of p++AlGaAs layer, 0.02 μm of n++GaAs layer, 0.02-0.04 μm n+AlGaAs barrier layer.
5.GaInP pushes up power brick containing 0.03-0.05 μm of n+ AlInP Window layer, 0.05-0.1 μm n+ GaInP emitter region, 0.5-1 μm p-GaInP base, 0.03-0.05 μm p+AlGaAs back surface field layer.
Embodiment 3
Use mocvd method (Metal Organic Chemical Vapor Deposition, metallo-organic compound chemical gaseous phase deposition) in the present embodiment, with the difference of example 1 be:
1. wherein the second tunnel junctions comprises 0.03 μm of p++ AlGaAs layer, 0.03 μm of n++GaAs layer, 0.03-0.05 μm n+AlGaAs barrier layer.
2. distributed Bragg reflector (DBR) comprises 0.03-0.1 μm of n+ Al (Ga) As and 0.03-0.1 μm of n+ Ga (In) As in 10 cycles.
3.GaInAs intermediate cell comprises 0.05-0.1 μm of n+ AlInP Window layer, 0.1-0.2 μm n+ GaInAs emitter region, 1.5 ~ 2 μm of p-GaInAs bases, 0.03-0.05 μm p+ (Al
xga
1-xinP) back surface field layer.
4. the first tunnel junctions comprises 0.02 μm of p++AlGaAs layer, 0.02 μm of n++GaAs layer, 0.02-0.04 μm n+AlGaAs barrier layer.
5.GaInP pushes up power brick containing 0.03-0.05 μm of n+ AlInP Window layer, 0.05-0.1 μm n+ GaInP emitter region, 0.5-1 μm p-GaInP base, 0.03-0.05 μm p+AlGaAs back surface field layer.
X value in above-mentioned three embodiments does not affect result of the test, and its value is this area routine techniques, is not described in detail at this.
The use of dbr structure in the present invention, can produce reflectance spectrum as shown in Figure 2.The spectral region of reflection and reflectivity are decided by component and the number of plies of material, by optimizing the number of plies of Al (Ga) As/Ga (In) As duplicature system, respective component and thickness, corresponding reflection peak can regulate in 800 ~ 900nm scope, spectral region adjusts within the scope of 80 ~ 120nm, and the reflectivity that reflection peak is corresponding can reach 98%.The application of DBR while minimizing GaInAs intermediate cell base thickness, can improve the absorption to the light in reflected spectral range, makes the electric current of GaInAs intermediate cell be greater than the electric current of GaInP top battery.
AM0 conversion efficiency under solar cell BOL state is 29.0%, more lower slightly than the conversion efficiency (29.5%) without the solar cell optimized.After the electron radiation through same intensity and dosage (1 × 10
15the 1-MeV electron irradiation of flux, equivalence describes the synchronous satellite irradiation effect that all high energy particles suffered by 15 years are total in-orbit), the AM0 conversion efficiency of solar cell under EOL state through optimizing is 24.65%, and the conversion efficiency without the solar cell optimized is 21.65%.Corresponding attenuation rate is respectively 17.6% and 36.2%.
In the present invention, the thickness of the GaInAs base of GaInAs intermediate cell is adjusted to 1.4 ~ 2 microns, the reduction of GaInAs base thickness can be offset carrier diffusion length that irradiation causes and to be declined the collection problem caused, improve Radiation hardness, at least one deck distributed Bragg reflector is set at the bottom of GaInAs intermediate cell and Ge between battery simultaneously, improve the corresponding spectrum of GaInAs intermediate cell in the light path footpath of GaInAs intermediate cell, improve short-circuit current density, still higher conversion efficiency can be kept final period in work, the present invention is after being equivalent to the test of the synchronous satellite total irradiation of all high energy particles suffered by 15 years in-orbit, the attenuation rate of conversion efficiency is only 1/2nd of traditional structure solar cell.
Claims (10)
1. a Flouride-resistani acid phesphatase three ties cascade gallium arsenide solar cell, comprise top battery, intermediate cell and end battery, it is characterized in that: top battery is contact layer, be the first tunnel junctions between top battery and intermediate cell, being followed successively by the second tunnel junctions, at least one deck distributed Bragg reflector, resilient coating and nucleating layer between intermediate cell and end battery, is substrate under end battery.
2. a kind of Flouride-resistani acid phesphatase three according to claim 1 ties cascade gallium arsenide solar cell, it is characterized in that: described top battery is that GaInP pushes up battery, intermediate cell is GaInAs intermediate cell, end battery is battery at the bottom of Ge, it is GaAs contact layer that GaInP pushes up on battery, it is the first tunnel junctions that GaInP pushes up between battery and GaInAs intermediate cell, being followed successively by the second tunnel junctions, at least one deck distributed Bragg reflector, GaInAs resilient coating and GaInP nucleating layer between battery at the bottom of GaInAs intermediate cell and Ge, is Ge substrate under battery at the bottom of Ge.
3. a kind of Flouride-resistani acid phesphatase three according to claim 2 ties cascade gallium arsenide solar cell, it is characterized in that: the energy gap that described GaInP pushes up battery at the bottom of battery, GaInAs intermediate cell and Ge is respectively 1.90 ± 0.05eV, 1.39 ± 0.05eV, 0.67eV.
4. a kind of Flouride-resistani acid phesphatase three according to claim 3 ties cascade gallium arsenide solar cell, it is characterized in that: the difference that described GaInAs intermediate cell and GaInP push up the short-circuit current density of battery is 0 ~ 0.5mA/cm
2.
5. a kind of Flouride-resistani acid phesphatase three according to claim 4 ties cascade gallium arsenide solar cell, it is characterized in that:
Described GaInP pushes up power brick containing the AlInP Window layer set gradually, GaInP emitter region, GaInP base and back surface field layer from top to bottom;
Described GaInAs intermediate cell comprise from top to bottom set gradually Window layer, GaInAs emitter region, GaInAs base, back surface field layer;
Described distributed Bragg reflector DBR is made up of the elementary cell in n cycle, centered by the optical thickness of every layer material reflection wavelength 1/4;
Power brick at the bottom of described Ge is containing Ge emitter region, Ge base;
N is greater than 5 and is less than 15.
6. a kind of Flouride-resistani acid phesphatase three according to claim 5 ties cascade gallium arsenide solar cell, it is characterized in that: the material that described GaInP pushes up the back surface field layer of battery and GaInAs intermediate cell is Al
xga
1-xinP or AlGaAs, the material of the Window layer of described GaInAs intermediate cell is AlInP or GaInP, and the material of described elementary cell is AlAs/GaAs, Al
xga
1-xas/GaInAs, Al
xga
1-xas/AlAs, described x is greater than 0 and is less than 1.
7. a kind of Flouride-resistani acid phesphatase three according to claim 6 ties cascade gallium arsenide solar cell, it is characterized in that: the thickness of the GaInAs base of described GaInAs intermediate cell is 1.4 ~ 2 microns.
8. a kind of Flouride-resistani acid phesphatase three according to claim 7 ties the preparation method of cascade gallium arsenide solar cell, it is characterized in that: use mocvd method or MBE method to grow obtained finished product successively.
9. a kind of Flouride-resistani acid phesphatase three according to claim 8 ties the preparation method of cascade gallium arsenide solar cell, it is characterized in that: in described mocvd method, the N-type foreign atom of Ge layer is A
sor P, remainder layer N-type foreign atom is Si, Se, S or Te, and P type foreign atom is Zn, Mg or C.
10. a kind of Flouride-resistani acid phesphatase three according to claim 8 ties the preparation method of cascade gallium arsenide solar cell, it is characterized in that: in described MBE method, the N-type foreign atom of Ge layer is A
sor P, remainder layer N-type foreign atom is Si, Se, S, Sn or Te, and P type foreign atom is Be, Mg or C.
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