CN109801991A - A kind of vertical stack solar battery and preparation method thereof - Google Patents
A kind of vertical stack solar battery and preparation method thereof Download PDFInfo
- Publication number
- CN109801991A CN109801991A CN201910006482.4A CN201910006482A CN109801991A CN 109801991 A CN109801991 A CN 109801991A CN 201910006482 A CN201910006482 A CN 201910006482A CN 109801991 A CN109801991 A CN 109801991A
- Authority
- CN
- China
- Prior art keywords
- doped region
- layer
- doping
- electrode
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 35
- 239000000463 material Substances 0.000 claims abstract description 61
- 238000004519 manufacturing process Methods 0.000 claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 239000010410 layer Substances 0.000 claims description 159
- 238000000926 separation method Methods 0.000 claims description 66
- 239000000758 substrate Substances 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 33
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 28
- 239000002356 single layer Substances 0.000 claims description 25
- ITRNXVSDJBHYNJ-UHFFFAOYSA-N tungsten disulfide Chemical compound S=[W]=S ITRNXVSDJBHYNJ-UHFFFAOYSA-N 0.000 claims description 22
- 239000002210 silicon-based material Substances 0.000 claims description 16
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 15
- 238000009792 diffusion process Methods 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical group [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 229910052681 coesite Inorganic materials 0.000 claims description 5
- 229910052906 cristobalite Inorganic materials 0.000 claims description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- YMWUJEATGCHHMB-UHFFFAOYSA-N methylene chloride Substances ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 claims description 5
- 229910052758 niobium Inorganic materials 0.000 claims description 5
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical group [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 5
- 229910052711 selenium Inorganic materials 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 229910052682 stishovite Inorganic materials 0.000 claims description 5
- 229910052905 tridymite Inorganic materials 0.000 claims description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- 230000003667 anti-reflective effect Effects 0.000 claims description 4
- 238000000407 epitaxy Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 4
- 238000001020 plasma etching Methods 0.000 claims description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical group C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- 239000011259 mixed solution Substances 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- 238000002207 thermal evaporation Methods 0.000 claims description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N CHCl3 Substances ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims 1
- 229910004205 SiNX Inorganic materials 0.000 claims 1
- 241000209140 Triticum Species 0.000 claims 1
- 235000021307 Triticum Nutrition 0.000 claims 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 1
- 229910052593 corundum Inorganic materials 0.000 claims 1
- 238000005566 electron beam evaporation Methods 0.000 claims 1
- 235000013312 flour Nutrition 0.000 claims 1
- 238000001659 ion-beam spectroscopy Methods 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 238000007747 plating Methods 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 238000004528 spin coating Methods 0.000 claims 1
- 238000005507 spraying Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 229910001845 yogo sapphire Inorganic materials 0.000 claims 1
- 230000005611 electricity Effects 0.000 abstract description 11
- 238000010521 absorption reaction Methods 0.000 abstract description 5
- 239000007789 gas Substances 0.000 description 18
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 14
- 239000010936 titanium Substances 0.000 description 14
- 229910052719 titanium Inorganic materials 0.000 description 14
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 229910052737 gold Inorganic materials 0.000 description 8
- 238000003475 lamination Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000013078 crystal Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000002513 implantation Methods 0.000 description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 241000209094 Oryza Species 0.000 description 4
- 235000007164 Oryza sativa Nutrition 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 125000001309 chloro group Chemical group Cl* 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000012299 nitrogen atmosphere Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 235000009566 rice Nutrition 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 206010024769 Local reaction Diseases 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 2
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 125000004437 phosphorous atom Chemical group 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical group ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- QPBYLOWPSRZOFX-UHFFFAOYSA-J tin(iv) iodide Chemical compound I[Sn](I)(I)I QPBYLOWPSRZOFX-UHFFFAOYSA-J 0.000 description 2
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 2
- 239000005052 trichlorosilane Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910000085 borane Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- -1 power 100W is etched Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of vertical stack solar battery and preparation method thereof, which from top to bottom successively includes: top cell, middle layer battery, bottom cell, and the width of bottom cell is less than the width of middle layer battery.The present invention prepares top layer and bottom cell using New Two Dimensional semiconductor material, it can use absorption of the smaller thickness realization to sunlight, reduce materials'use amount, reduce manufacturing cost, and the electricity loss of solar battery can be reduced, improve the transfer efficiency of solar battery.And it is all made of vertical multijunction structure, is the equal of multiple pn-junction series connection, so output voltage is high, output electric current can be reduced by reducing the area for the basic unit being repeated cyclically of battery, more suitable for generating electricity by way of merging two or more grid systems.
Description
Technical field
This patent is related to a kind of solar battery structure and preparation method thereof, especially with regard to a kind of vertical stack solar energy
Battery and preparation method thereof.
Background technique
The problems such as whole world environmental pollution in recent years, greenhouse effects, is on the rise, and traditional energy reserves are fewer and fewer,
Price is higher and higher, so demand of the mankind to clean energy resource is increasing, solar energy power generating is as a kind of clean energy resource
Increasingly it is valued by people.Currently, solar-energy photo-voltaic cell available on the market is largely crystal silicon solar energy battery,
Its cost of electricity-generating is still higher than traditional fossil energy.By improve crystal silicon cell transfer efficiency can reduce its power generation at
This, but the efficiency of crystal silicon cell is already close to theoretical limit at present, then the space promoted is very limited.The reason is that sunlight
The long wave of spectrum and shortwave part cannot be efficiently used by crystalline silicon material, so people attempt to utilize it in the upper surface of crystalline silicon
Its bandwidth semiconductor material bigger than crystalline silicon prepares top cell, utilizes other bandwidths in the lower surface of crystalline silicon
The semiconductor material smaller than crystalline silicon prepares bottom cell.The crystal silicon cell of top cell, bottom cell and middle layer is formed
Lamination solar cell, to improve the transfer efficiency of crystal silicon solar energy battery.People are at present mainly using three-five half
Conductor material prepares top cell, prepares bottom cell, the higher cost of these two types of materials using germanium material.Traditional lamination is too
It is positive to be electrically connected by the way of currents match between each sub- battery of battery, with the incident angle of incident sunlight,
The variation of spectrum is easy to produce current mismatch between each sub- battery, so as to cause power loss.In addition, selling currently on the market
Crystal silicon solar energy battery monolithic output voltage it is lower (be less than 0.8V), it is necessary to carrying out series connection could be used to generate electricity by way of merging two or more grid systems.
Summary of the invention
The purpose of the present invention is to provide a kind of vertical stack solar batteries, while providing the system of the solar battery
Preparation Method.
The technical scheme is that
A kind of vertical stack solar battery, the battery from top to bottom successively include: top cell, middle layer battery, bottom
Layer battery, the width of bottom cell are less than the width of middle layer battery.
Further, top cell includes: the basic unit being repeated cyclically, two sides doped region, two lateral electrodes and anti-reflection
Four part of layer is penetrated, wherein the basic unit being repeated cyclically includes:
First base area is single-layer or multi-layer tungsten disulfide material, and thickness is from 1 layer to 100 layer；
First doped region is single-layer or multi-layer tungsten disulfide material, which is produced on the side of the first base area,
Its thickness is identical as the thickness of the first base area；
Second doped region, is single-layer or multi-layer tungsten disulfide material, which is produced on the another of the first base area
Side, thickness are identical as the thickness of the first base area；
Two adjacent basic units are serially connected by the first doped region and the second doped region；
Two sides doped region are as follows:
Third doped region, is single-layer or multi-layer tungsten disulfide material, which is produced on outermost substantially single
The outside of first doped region of member, thickness are identical as the thickness of the first doped region；
4th doped region, is single-layer or multi-layer tungsten disulfide material, and the 4th doped region is produced on another outermost base
The outside of second doped region of this unit, thickness are identical as the thickness of the second doped region；
Two lateral electrodes are as follows:
First electrode, the first electrode are produced on the upper surface of third doped region, and width is less than the width of third doped region
Degree；
Second electrode, the second electrode are produced on the upper surface of the 4th doped region, width of the width less than the 4th doped region
Degree；
Antireflection layer, the antireflection layer are produced on the upper surface for the basic unit being repeated cyclically, and covering cycle repeats
Basic unit, cover third doped region and the 4th doped region end, connect with first electrode and second electrode.
Further, middle layer battery includes: the basic unit being repeated cyclically, two sides doped region, two lateral electrodes, and first
Five part of separation layer and the second separation layer, wherein the basic unit being repeated cyclically includes:
Second base area is single crystal silicon material, and thickness is less than 400 microns；
5th doped region, is single crystal silicon material, and the 5th doped region is produced on the side of the second base area, thickness and second
The thickness of base area is identical；
6th doped region is single crystal silicon material, and the 6th doped region is produced on the other side of the second base area, thickness and the
The thickness of two base areas is identical；
Two adjacent basic units are serially connected by the 5th doped region and the 6th doped region；
Two sides doped region are as follows:
7th doped region, is single crystal silicon material, and the 7th doped region is produced on the 5th doping of outermost basic unit
The outside in area, thickness are identical as the thickness of the 5th doped region；
8th doped region, is single crystal silicon material, and the 8th doped region is produced on the 6th of another outermost basic unit
The outside of doped region, thickness are identical as the thickness of the 6th doped region；
Two lateral electrodes are as follows:
Third electrode, the third electrode fabrication is in the lower surface of the 7th doped region, width of the width less than the 7th doped region
Degree；
4th electrode, the 4th electrode fabrication is in the lower surface of the 8th doped region, width of the width less than the 8th doped region
Degree；
First separation layer, first separation layer are produced on the upper surface for the basic unit being repeated cyclically, covering cycle
Duplicate basic unit, covers the 7th doped region and the 8th doped region, which is located at the periodicity weight of top cell
The lower surface of multiple basic unit covers the third doped region and the 4th doped region of top cell；
Second separation layer, second separation layer are produced on the lower surface for the basic unit being repeated cyclically, covering cycle
Duplicate basic unit covers the end of the 7th doped region and the 8th doped region, connects with third electrode and the 4th electrode.
Further, bottom cell includes: the basic unit being repeated cyclically, two sides doped region, two lateral electrodes, third every
Five part of absciss layer and back reflection layer, wherein the basic unit and two sides doped region that are repeated cyclically are located at the second of middle layer battery
The lower surface middle position of separation layer, width is less than the second separation layer, wherein the basic unit being repeated cyclically includes:
Third base area is multilayer black phosphorus material, and thickness is from 2 layers to 1000 layer；
9th doped region is multilayer black phosphorus material, and the 9th doped region is produced on the side of third base area, thickness and the
The thickness of three base areas is identical；
Tenth doped region is multilayer black phosphorus material, and the tenth doped region is produced on the other side of third base area, thickness with
The thickness of third base area is identical；
Two adjacent basic units are serially connected by the 9th doped region and the tenth doped region；
Two sides doped region are as follows:
11st doped region, is multilayer black phosphorus material, and the 11st doped region is produced on the of outermost basic unit
The outside of nine doped regions, thickness are identical as the thickness of the 9th doped region；
12nd doped region, is multilayer black phosphorus material, and the 12nd doped region is produced on another outermost basic unit
The tenth doped region outside, thickness is identical as the thickness of the tenth doped region；
Two lateral electrodes are as follows:
5th electrode, the 5th electrode fabrication is in the lower surface of the 11st doped region, and width is less than the 11st doped region
Width；
6th electrode, the 6th electrode fabrication is in the lower surface of the 12nd doped region, and width is less than the 12nd doped region
Width；
Third separation layer, the third separation layer are produced on the lower surface for the basic unit being repeated cyclically, covering cycle
Duplicate basic unit covers the end of the 11st doped region and the 12nd doped region, connects with the 5th electrode and the 6th electrode；
Back reflection layer, the back reflection layer are produced on the lower surface of third separation layer, third separation layer are covered, with the 5th electrode
Connect with the 6th electrode.
A kind of preparation method of vertical stack solar battery, the method includes the steps of:
Step 1: the second base area of the basic unit of preparation middle layer battery being repeated cyclically, the 5th doped region, the 6th
Doped region, the 7th doped region of two sides and the 8th doped region, the first separation layer and the second separation layer；
Step 2: the first base area of the basic unit of top cell being repeated cyclically is prepared in middle layer battery upper surface,
First doped region, the second doped region, the third doped region and the 4th doped region and antireflective film of two sides；
Step 3: preparing the basic unit of bottom cell being repeated cyclically in middle layer battery lower surface middle position
Third base area, the 9th doped region, the tenth doped region, the 11st doped region of two sides and the 12nd doped region, third separation layer with
And back reflection layer；
Step 4: first electrode is prepared in third doped region upper surface, prepares second electrode in the 4th doped region upper surface,
Third electrode is prepared in the 7th doped region lower surface, the 4th electrode is prepared in the 8th doped region lower surface, in the 11st doped region
Lower surface prepares the 5th electrode, prepares the 6th electrode in the 12nd doped region lower surface.
The beneficial effects of the present invention are:
1, traditional three-five semiconductor material is replaced using New Two Dimensional semiconductor material monolayer and multilayer tungsten disulfide
The optical absorption coefficient of preparation top cell, single layer and multilayer tungsten disulfide is greater than three-five semiconductor material, can use more
Small thickness realizes the absorption to sunlight, so as to reduce materials'use amount, reduces manufacturing cost, and can reduce solar energy
The electricity of battery is lost, and the transfer efficiency of solar battery is improved.
2, traditional germanium material is replaced to prepare bottom cell, multilayer black phosphorus using New Two Dimensional semiconductor material multilayer black phosphorus
Optical absorption coefficient be greater than germanium material, can use smaller thickness and realize absorption to sunlight, so as to reduce material
Expect usage amount, reduce manufacturing cost, and the electricity loss of solar battery can be reduced, improves the transfer efficiency of solar battery.
3, three component parts of vertical stack solar battery of the present invention: top cell, middle layer battery and bottom electricity
Pond is all made of vertical multijunction structure, is the equal of multiple pn-junction series connection, so output voltage is high, by the periodicity for reducing battery
The area of duplicate basic unit can reduce output electric current, therefore the battery is more suitable for than current crystal silicon solar energy battery
In generating electricity by way of merging two or more grid systems.
4, top cell of the invention, middle layer battery and bottom cell can work independently, Independent Power Generation, can also incite somebody to action
The positive electrode of the sub- battery of above three is connected with positive electrode, and negative electrode is connected with negative electrode, that is, in a manner of voltage matches
It is electrically connected.With the variation of the incident angle, spectrum of incident sunlight, the voltage mismatch that is generated between each sub- battery compared with
It is small, it is much smaller than current mismatch, the electricity loss of generation is much smaller than currents match situation.
Detailed description of the invention
For the purposes, technical schemes and advantages of this patent are more clearly understood, below in conjunction with specific embodiments and drawings,
Detailed description is as follows, in which:
Fig. 1 is the structural schematic diagram of vertical stack solar battery；
Fig. 2 is preparation flow figure of the invention.
Specific embodiment
As shown in Figs.1 and 2, the present invention mentions a kind of vertical stack solar battery, and the battery is from top to bottom successively
It include: top cell, middle layer battery, bottom cell, the width of bottom cell is less than the width of middle layer battery.
Wherein top cell includes: the basic unit being repeated cyclically, two sides doped region, two lateral electrodes and antireflection layer four
Part, wherein the basic unit being repeated cyclically includes:
First base area 10 is single layer tungsten disulfide material；
First doped region 11 is single layer tungsten disulfide material, which is produced on the side of the first base area 10,
For n-type doping, doping is chlorine atom；
Second doped region 12, is single layer tungsten disulfide material, which is produced on the another of the first base area 10
Side is adulterated for p-type, and doping is niobium atom；
Two adjacent basic units are serially connected by the first doped region 11 and the second doped region 12；
Two sides doped region are as follows:
Third doped region 13, is single layer tungsten disulfide material, which is produced on outermost basic unit
The first doped region 11 outside, be n-type doping, doping is chlorine atom, and the doping concentration of third doped region 13 is greater than first
The doping concentration of doped region 11；
4th doped region 14, is single layer tungsten disulfide material, and the 4th doped region 14 is produced on another outermost basic
The outside of second doped region 12 of unit is adulterated for p-type, and the doping concentration of the 4th doped region 14 is greater than mixing for the second doped region 12
Miscellaneous concentration, doping is niobium atom；
Two lateral electrodes are as follows:
First electrode 15, the first electrode 15 are produced on the upper surface of third doped region 13, and width is adulterated less than third
The width in area 13, the material of the first electrode 15 are the lamination of titanium and gold, titanium with a thickness of 30 nanometers, it is golden to be received with a thickness of 50
Rice；
Second electrode 16, the second electrode 16 are produced on the upper surface of the 4th doped region 14, and width is less than the 4th doping
The width in area 14, the material of the second electrode 16 are the lamination of titanium and gold, titanium with a thickness of 30 nanometers, it is golden to be received with a thickness of 50
Rice；
Antireflection layer 17, the antireflection layer 17 are produced on the upper surface for the basic unit being repeated cyclically, covering cycle
Duplicate basic unit covers the end of third doped region 13 and the 4th doped region 14, with first electrode 15 and second electrode 16
Connect, the material of the antireflection layer 17 is SiO2, with a thickness of 100 nanometers.
In vertical stack solar battery of the present invention, middle layer battery includes: the basic unit being repeated cyclically, and two sides are mixed
Miscellaneous area, two lateral electrodes, five part of the first separation layer and the second separation layer, wherein the basic unit being repeated cyclically includes:
Second base area 20 is single crystal silicon material, with a thickness of 200 microns；
5th doped region 21 is single crystal silicon material, and with a thickness of 200 microns, the 5th doped region 21 is produced on the second base area
20 side is n-type doping, and doping is phosphorus atoms；
6th doped region 22 is single crystal silicon material, and with a thickness of 200 microns, the 6th doped region 22 is produced on the second base area
20 other side is adulterated for p-type, and doping is boron atom；
Two adjacent basic units are serially connected by the 5th doped region 21 and the 6th doped region 22；
Two sides doped region are as follows:
7th doped region 23 is single crystal silicon material, and with a thickness of 200 microns, the 7th doped region 23 is produced on outermost
The outside of 5th doped region 21 of basic unit is n-type doping, and doping is phosphorus atoms, and the doping of the 7th doped region 23 is dense
Degree is greater than the doping concentration of the 5th doped region 21；
8th doped region 24 is single crystal silicon material, and with a thickness of 200 microns, the 8th doped region 24 is produced on another outermost
The outside of 6th doped region 22 of the basic unit of side is adulterated for p-type, and doping is boron atom, and the 8th doped region 24 is mixed
Miscellaneous concentration is greater than the doping concentration of the 6th doped region 22；
Two lateral electrodes are as follows:
Third electrode 25, the third electrode 25 are produced on the lower surface of the 7th doped region 23, and width is less than the 7th doping
The width in area 23, the material of the third electrode 25 are the lamination of titanium and gold, titanium with a thickness of 30 nanometers, it is golden to be received with a thickness of 50
Rice；
4th electrode 26, the 4th electrode 26 are produced on the lower surface of the 8th doped region 24, and width is less than the 8th doping
The width in area 24, the material of the 4th electrode 26 are the lamination of titanium and gold, titanium with a thickness of 30 nanometers, it is golden to be received with a thickness of 50
Rice；
First separation layer 27, first separation layer 27 are produced on the upper surface for the basic unit being repeated cyclically, covering week
The duplicate basic unit of phase property, covers the 7th doped region 23 and the 8th doped region 24, first separation layer 27 are located at top cell
The basic unit being repeated cyclically lower surface, cover the third doped region 13 and the 4th doped region 14 of top cell, this
The material of one separation layer 27 is SiO2, with a thickness of 50 nanometers；
Second separation layer 28, second separation layer 28 are produced on the lower surface for the basic unit being repeated cyclically, covering week
The duplicate basic unit of phase property covers the end of the 7th doped region 23 and the 8th doped region 24, with third electrode 25 and the 4th electricity
Pole 26 connects, and the material of second separation layer 28 is SiO2, with a thickness of 50 nanometers.
In vertical stack solar battery of the present invention, bottom cell includes: the basic unit being repeated cyclically, two sides doping
Area, two lateral electrodes, five part of third separation layer and back reflection layer, wherein position is adulterated in the basic unit being repeated cyclically and two sides
In the lower surface middle position of the second separation layer 28 of middle layer battery, width is less than the second separation layer 28, wherein periodically weight
Multiple basic unit includes:
Third base area 30 is 3 layers of black phosphorus material；
9th doped region 31 is 3 layers of black phosphorus material, and the 9th doped region 31 is produced on the side of third base area 30, is N-type
Doping, doping is aluminium atom；
Tenth doped region 32 is 3 layers of black phosphorus material, and the tenth doped region 32 is produced on the other side of third base area 30, is P
Type doping, doping is selenium atom；
Two adjacent basic units are serially connected by the 9th doped region 31 and the tenth doped region 32；
Two sides doped region are as follows:
11st doped region 33, is 3 layers of black phosphorus material, and the 11st doped region 33 is produced on outermost basic unit
The outside of 9th doped region 31 is n-type doping, and doping is aluminium atom, and the doping concentration of the 11st doped region 33 is greater than the
The doping concentration of nine doped regions 31；
12nd doped region 34, is 3 layers of black phosphorus material, and the 12nd doped region 34 is produced on another outermost substantially single
The outside of tenth doped region 32 of member is adulterated for p-type, and doping is selenium atom, and the doping concentration of the 12nd doped region 34 is big
In the doping concentration of the tenth doped region 32；
Two lateral electrodes are as follows:
5th electrode 35, the 5th electrode 35 are produced on the lower surface of the 11st doped region 33, and width is less than the 11st
The width of doped region 33, the material of the 5th electrode 35 are the lamination of titanium and gold, titanium with a thickness of 30 nanometers, it is golden with a thickness of 50
Nanometer；
6th electrode 36, the 6th electrode 36 are produced on the lower surface of the 12nd doped region 34, and width is less than the 12nd
The width of doped region 34, the material of the 6th electrode 36 are the lamination of titanium and gold, titanium with a thickness of 30 nanometers, it is golden with a thickness of 50
Nanometer；
Third separation layer 37, the third separation layer 37 are produced on the lower surface for the basic unit being repeated cyclically, covering week
The duplicate basic unit of phase property covers the end of the 11st doped region 33 and the 12nd doped region 34, with the 5th electrode 35 and the
Six electrodes 36 connect, and the material of the third separation layer 37 is SiO2, with a thickness of 50 nanometers；
Back reflection layer 38, the back reflection layer 38 are produced on the lower surface of third separation layer 37, cover third separation layer 37, with
5th electrode 35 and the 6th electrode 36 connect, and the material of the back reflection layer 38 is aluminium, with a thickness of 200 nanometers.
The battery when in use links together first electrode 15, third electrode 25 and the 5th electrode 35, as negative electricity
Pole；By second electrode 16, the 4th electrode 26 and the 6th electrode 36 link together, as positive electrode, by top cell, in
Interbed battery, the quantity for being repeated cyclically unit of bottom cell and width are adjusted, so that the output electricity of three sub- batteries
Pressure is close.
The present invention provides a kind of preparation method of vertical stack solar battery, and the method includes the steps of:
Step 1: the second base area 20 of the basic unit of preparation middle layer battery being repeated cyclically, the 5th doped region 21,
6th doped region 22, the 7th doped region 23 of two sides and the 8th doped region 24, the first separation layer 27 and the second separation layer 28.
Step 1 the following steps are included:
Step 1-1: on a surface of monocrystalline substrate by the method for thermal diffusion, phosphorus is adulterated in its near-surface region
Atom, diffusion temperature are 850 degree, and diffusion source is phosphorus oxychloride, becomes the 5th doped region 21；In the another of monocrystalline substrate
A surface boron atom is adulterated in its near-surface region, diffusion temperature is 900 degree, and diffusion source is tribromo by the method for diffusion
Change boron, become the 6th doped region 22, the undoped intermediate region of monocrystalline substrate becomes the second base area 20, completes basic base
The preparation of piece.
Step 1-2: it on the surface of the 5th doped region 21 of a basic substrate, is mixed using normal pressure epitaxy technique preparation the 7th
Miscellaneous area 23, being passed through gas is trichlorosilane, phosphine and hydrogen, 1150 degree of epitaxial temperature, completes the preparation of the first outside substrate.
Step 1-3: on the surface of the 6th doped region 22 of another basic substrate, normal pressure epitaxy technique preparation the 8th is utilized
Doped region 24, being passed through gas is trichlorosilane, borine and hydrogen, 1150 degree of epitaxial temperature, completes the system of second of outside substrate
It is standby.
Step 1-4: by multiple basic substrates according to the 5th doped region 21 and another basic substrate of a basic substrate
The sequence that connects of the 6th doped region 22 be successively stacked together, by the first outside, substrate is placed on the basic base being stacked together
Second of outside substrate, is placed on the lowest part for the basic substrate being stacked together by the topmost of piece, and the of above-mentioned all substrates
Five doped regions 21 are upper, and the 6th doped region 22 is under.
Step 1-5: being put into key and machine for the substrate being stacked together, carry out heating pressurization key and, 300 degree of heating temperature,
Pressurize pressure 10MPa, makes adjacent substrates key and to ultimately forming an entirety together.
Step 1-6: key is successively cut using carborundum line along vertical substrate surface direction and to being formed together whole base
Piece prepares a series of rectangular vertical junction being made of multiple basic units being repeated cyclically and two sides doped region of sheets
Structure.
Step 1-7: the damaging layer on vertical structure surface is eroded with nitric acid, hydrofluoric acid mixed solution.
Step 1-8: two surfaces of vertical structure using thermal oxide the first separation layer 27 of method preparation and second every
Absciss layer 28,1050 degree of oxidizing temperature, oxidizing gas selects oxygen.
Step 2: in the first base area of the basic unit of middle layer battery upper surface preparation top cell being repeated cyclically
10, the first doped region 11, the second doped region 12, the third doped region 13 and the 4th doped region 14 and antireflective film 17 of two sides.
Step 2 the following steps are included:
Step 2-1: in the upper surface of the first separation layer 27, single layer curing is prepared using the method for chemical vapor deposition
Tungsten, source material WO3Powder and S powder, gas select H2And N2, gas flow rate is 20sccm and 60sccm, deposition pressure 2Pa, deposition
900 degree of temperature.
Step 2-2: local reaction ion etching is carried out to single layer molybdenum disulfide surface using reactive ion etching process, is carved
It loses gas and selects CH2Cl2, power 50W is etched, etches air pressure 1Pa, gas flow rate 20sccm, etch period 30 seconds, part was adulterated
Cl atom, the first doped region of N-type 11 of the duplicate basic unit of manufacturing cycle.
Local reaction ion etching, etching gas choosing are carried out to single layer molybdenum disulfide surface using reactive ion etching process
Use CH2Cl2, power 100W is etched, air pressure 1Pa, gas flow rate 20sccm are etched, etch period 60 seconds, Cl atom was adulterated in part,
Prepare the N-type third doped region 13 in 11 outside of the first doped region of outermost basic unit.
Local doping is carried out to single layer tungsten disulfide using ion implantation technology, injection atom is niobium atom, implantation dosage 1
×1015/cm2, Implantation Energy 20keV, then short annealing 10s in a nitrogen atmosphere, 500 degree of annealing temperature, manufacturing cycle
The second doped region of p-type 12 of duplicate basic unit.
Local doping is carried out to single layer tungsten disulfide using ion implantation technology, injection atom is niobium atom, implantation dosage 5
×1015/cm2, Implantation Energy 20keV, then short annealing 10s in a nitrogen atmosphere, 500 degree of annealing temperature, prepare it is another most
The 4th doped region 14 of p-type in 12 outside of the second doped region of the basic unit in outside.
Step 3: preparing the basic unit of bottom cell being repeated cyclically in middle layer battery lower surface middle position
Third base area 30, the 9th doped region 31, the tenth doped region 32, the 11st doped region 33 of two sides and the 12nd doped region 34, the
Three separation layers 37 and back reflection layer 38.
Step 3 the following steps are included:
Step 3-1: 3 layers of red phosphorus, evaporation source material are prepared in the lower surface of the second separation layer 28 using the method for thermal evaporation
For block black phosphorus, 600 degree of substrate heating temperature；Then above-mentioned sample is put into CVD apparatus, source material SnI4
Powder and Sn powder, gas select argon gas, and 3 layers of red phosphorus, are become 3 layers by gas flow rate 50sccm, air pressure 2Pa by 900 degree of depositing temperature
Black phosphorus.
Step 3-2: locally adulterating aluminium atom using the method for thermal diffusion on 3 layers of black phosphorus, and diffusion source is trimethyl aluminium, expands
Dissipating temperature is 150 degree, the 9th doped region 31 of N-type of the duplicate basic unit of manufacturing cycle.
Aluminium atom is locally adulterated using the method for thermal diffusion on 3 layers of black phosphorus, diffusion source is trimethyl aluminium, and diffusion temperature is
200 degree, prepare the 11st doped region 33 of N-type in 31 outside of the 9th doped region of outermost basic unit.
Selenium atom, implantation dosage 1 × 10 are locally adulterated using the method for ion implanting on 3 layers of black phosphorus14/cm2, inject energy
20keV is measured, then short annealing 10s in a nitrogen atmosphere, 500 degree of annealing temperature, the P of the duplicate basic unit of manufacturing cycle
The tenth doped region 32 of type.
Selenium atom, implantation dosage 5 × 10 are locally adulterated using the method for ion implanting on 3 layers of black phosphorus14/cm2, inject energy
20keV is measured, then short annealing 10s in a nitrogen atmosphere, 500 degree of annealing temperature, prepares another outermost basic unit
The 12nd doped region 34 of p-type in 32 outside of the tenth doped region.
Step 3-3: SiO is deposited using chemical vapor deposition process on the basic unit surface being repeated cyclically2Film sinks
900 degree of accumulated temperature degree, deposition gases select SiH4, O2And H2, gas flow rate is 10sccm, deposition pressure 1Pa, preparation third every
Absciss layer 37.
Step 3-4: aluminium film is deposited on the surface of third separation layer 37 using magnetron sputtering technique, sputtering target material is selected
Aluminium, discharge power 200W, sputter gas select argon gas, and discharge air pressure 1Pa, prepare back reflection layer 38.
Step 4: using the method for magnetron sputtering in 13 upper surface of third doped region, 14 upper surface of the 4th doped region, the 7th
23 lower surface of doped region, 24 lower surface of the 8th doped region, 33 lower surface of the 11st doped region, 36 lower surface of the 12nd doped region are heavy
Product titanium film and gold thin film, sputtering target material select titanium and gold, discharge power 300W, and sputter gas selects argon gas, air pressure of discharging
1Pa prepares first electrode 15, second electrode 16, third electrode 25, the 4th electrode 26, the 5th electrode 35 and the 6th electrode 36.
Claims (17)
1. a kind of vertical stack solar battery, which is characterized in that the battery from top to bottom successively includes: top cell, centre
Layer battery, bottom cell, the width of bottom cell are less than the width of middle layer battery.
2. a kind of vertical stack solar battery according to claim 1, it is characterised in that: wherein top cell includes:
The basic unit being repeated cyclically, two sides doped region, four part of two lateral electrodes and antireflection layer, wherein what is be repeated cyclically is basic
Unit includes:
First base area (10) is single-layer or multi-layer tungsten disulfide material, and thickness is from 1 layer to 100 layer；
First doped region (11), is single-layer or multi-layer tungsten disulfide material, which is produced on the first base area
(10) side, thickness are identical as the thickness of the first base area (10)；
Second doped region (12), is single-layer or multi-layer tungsten disulfide material, which is produced on the first base area
(10) the other side, thickness are identical as the thickness of the first base area (10)；
Two adjacent basic units are serially connected by the first doped region (11) and the second doped region (12)；
Two sides doped region are as follows:
Third doped region (13), is single-layer or multi-layer tungsten disulfide material, which is produced on outermost base
The outside of first doped region (11) of this unit, thickness are identical as the thickness of the first doped region (11)；
4th doped region (14), is single-layer or multi-layer tungsten disulfide material, and the 4th doped region (14) is produced on another outermost
Basic unit the second doped region (12) outside, thickness is identical as the thickness of the second doped region (12)；
Two lateral electrodes are as follows:
First electrode (15), the first electrode (15) are produced on the upper surface of third doped region (13), and width is mixed less than third
The width of miscellaneous area (13)；
Second electrode (16), the second electrode (16) are produced on the upper surface of the 4th doped region (14), and width is mixed less than the 4th
The width of miscellaneous area (14)；
Antireflection layer (17), the antireflection layer (17) are produced on the upper surface for the basic unit being repeated cyclically, covering cycle
Duplicate basic unit covers the end of third doped region (13) and the 4th doped region (14), with first electrode (15) and second
Electrode (16) connects.
3. a kind of vertical stack solar battery according to claim 1, it is characterised in that: wherein middle layer battery pack
It includes: the basic unit being repeated cyclically, two sides doped region, two lateral electrodes, five part of the first separation layer and the second separation layer, wherein
The basic unit being repeated cyclically includes:
Second base area (20) is single crystal silicon material, and thickness is less than 400 microns；
5th doped region (21) is single crystal silicon material, and the 5th doped region (21) is produced on the side of the second base area (20), thick
It spends identical as the thickness of the second base area (20)；
6th doped region (22) is single crystal silicon material, and the 6th doped region (22) is produced on the other side of the second base area (20),
Thickness is identical as the thickness of the second base area (20)；
Two adjacent basic units are serially connected by the 5th doped region (21) and the 6th doped region (22)；
Two sides doped region are as follows:
7th doped region (23), is single crystal silicon material, and the 7th doped region (23) is produced on the 5th of outermost basic unit
The outside of doped region (21), thickness are identical as the thickness of the 5th doped region (21)；
8th doped region (24), is single crystal silicon material, and the 8th doped region (24) is produced on another outermost basic unit
The outside of 6th doped region (22), thickness are identical as the thickness of the 6th doped region (22)；
Two lateral electrodes are as follows:
Third electrode (25), the third electrode (25) are produced on the lower surface of the 7th doped region (23), and width is mixed less than the 7th
The width of miscellaneous area (23)；
4th electrode (26), the 4th electrode (26) are produced on the lower surface of the 8th doped region (24), and width is mixed less than the 8th
The width of miscellaneous area (24)；
First separation layer (27), first separation layer (27) are produced on the upper surface for the basic unit being repeated cyclically, covering week
The duplicate basic unit of phase property, covers the 7th doped region (23) and the 8th doped region (24), which is located at top
The lower surface for the basic unit of layer battery being repeated cyclically, covers the third doped region (13) and the 4th doped region of top cell
(14)；
Second separation layer (28), second separation layer (28) are produced on the lower surface for the basic unit being repeated cyclically, covering week
The duplicate basic unit of phase property, cover the 7th doped region (23) and the 8th doped region (24) end, with third electrode (25) and
4th electrode (26) connects.
4. a kind of vertical stack solar battery according to claim 1, it is characterised in that: wherein bottom cell includes:
The basic unit being repeated cyclically, two sides doped region, two lateral electrodes, five part of third separation layer and back reflection layer, wherein period
The duplicate basic unit of property and two sides doped region are located at the lower surface middle position of the second separation layer (28) of middle layer battery, wide
Degree is less than the second separation layer (28), wherein the basic unit being repeated cyclically includes:
Third base area (30) is multilayer black phosphorus material, and thickness is from 2 layers to 1000 layer；
9th doped region (31) is multilayer black phosphorus material, and the 9th doped region (31) is produced on the side of third base area (30),
Thickness is identical as the thickness of third base area (30)；
Tenth doped region (32) is multilayer black phosphorus material, and the tenth doped region (32) is produced on the other side of third base area (30),
Its thickness is identical as the thickness of third base area (30)；
Two adjacent basic units are serially connected by the 9th doped region (31) and the tenth doped region (32)；
Two sides doped region are as follows:
11st doped region (33), is multilayer black phosphorus material, and the 11st doped region (33) is produced on outermost basic unit
The 9th doped region (31) outside, thickness is identical as the thickness of the 9th doped region (31)；
12nd doped region (34), is multilayer black phosphorus material, and the 12nd doped region (34) is produced on another outermost basic
The outside of tenth doped region (32) of unit, thickness are identical as the thickness of the tenth doped region (32)；
Two lateral electrodes are as follows:
5th electrode (35), the 5th electrode (35) are produced on the lower surface of the 11st doped region (33), and width is less than the tenth
The width of one doped region (33)；
6th electrode (36), the 6th electrode (36) are produced on the lower surface of the 12nd doped region (34), and width is less than the tenth
The width of two doped regions (34)；
Third separation layer (37), the third separation layer (37) are produced on the lower surface for the basic unit being repeated cyclically, covering week
The duplicate basic unit of phase property covers the end of the 11st doped region (33) and the 12nd doped region (34), with the 5th electrode
(35) connect with the 6th electrode (36)；
Back reflection layer (38), the back reflection layer (38) are produced on the lower surface of third separation layer (37), cover third separation layer
(37), connect with the 5th electrode (35) and the 6th electrode (36).
5. a kind of vertical stack solar battery according to claim 2,3,4, it is characterised in that: the wherein antireflective
Layer (17), the first separation layer (27), the second separation layer (28) and third separation layer (37) material be SiC, AlN, Al2O3、
SiO2, one of SiNx or combinations thereof, for thickness less than 2000 nanometers, the material of back reflection layer (38) is aluminium or silver, thick
Degree is less than 2000 nanometers.
6. a kind of vertical stack solar battery according to claim 2, it is characterised in that: wherein the first of top cell
Base area (10) is intrinsic semiconductor or p-type doping or n-type doping, the doping class of the first doped region (11) and third doped region (13)
Type is identical, is that N-type or p-type are adulterated, and the doping concentration of third doped region (13) is greater than the doping concentration of the first doped region (11), the
The doping concentration of one doped region (11) is greater than the doping concentration of the first base area (10)；Second doped region (12) and the 4th doped region
(14) doping type is identical, is that N-type or p-type are adulterated, the doping type with the first doped region (11) and third doped region (13)
On the contrary, the doping concentration of the 4th doped region (14) is greater than the doping concentration of the second doped region (12), the second doped region (12) are mixed
Miscellaneous concentration is greater than the doping concentration of the first base area (10).
7. a kind of vertical stack solar battery according to claim 3, it is characterised in that: wherein the of middle layer battery
Two base areas (20) are intrinsic semiconductor or p-type doping or n-type doping, the doping of the 5th doped region (21) and the 7th doped region (23)
Type is identical, is that N-type or p-type are adulterated, and the doping concentration of the 7th doped region (23) is greater than the doping concentration of the 5th doped region (21),
The doping concentration of 5th doped region (21) is greater than the doping concentration of the second base area (20)；6th doped region (22) and the 8th doped region
(24) doping type is identical, is that N-type or p-type are adulterated, the doping type with the 5th doped region (21) and the 7th doped region (23)
On the contrary, the doping concentration of the 8th doped region (24) is greater than the doping concentration of the 6th doped region (22), the 6th doped region (22) are mixed
Miscellaneous concentration is greater than the doping concentration of the second base area (20).
8. a kind of vertical stack solar battery according to claim 4, it is characterised in that: the wherein third of bottom cell
Base area (30) is intrinsic semiconductor or p-type doping or n-type doping, the doping of the 9th doped region (31) and the 11st doped region (33)
Type is identical, is that N-type or p-type are adulterated, the doping that the doping concentration of the 11st doped region (33) is greater than the 9th doped region (31) is dense
Degree, the doping concentration of the 9th doped region (31) are greater than the doping concentration of third base area (30)；Tenth doped region (32) and the 12nd
The doping type of doped region (34) is identical, is that N-type or p-type are adulterated, with the 9th doped region (31) and the 11st doped region (33)
Doping type is on the contrary, the doping concentration of the 12nd doped region (34) is greater than the doping concentration of the tenth doped region (32), the tenth doping
The doping concentration in area (32) is greater than the doping concentration of third base area (30).
9. a kind of preparation method of the described in any item vertical stack solar batteries of claim 1-8, it is characterised in that: the party
Method comprises the steps of:
Step 1: the second base area (20) for the basic unit of preparation middle layer battery being repeated cyclically, the 5th doped region (21),
6th doped region (22), the 7th doped region (23) of two sides and the 8th doped region (24), the first separation layer (27) and second every
Absciss layer (28)；
Step 2: the first base area (10) for the basic unit of top cell being repeated cyclically is prepared in middle layer battery upper surface,
First doped region (11), the second doped region (12), the third doped region (13) and the 4th doped region (14) and antireflective film of two sides
(17)；
Step 3: in the third for the basic unit of middle layer battery lower surface middle position preparation bottom cell being repeated cyclically
Base area (30), the 9th doped region (31), the tenth doped region (32), the 11st doped region (33) of two sides and the 12nd doped region
(34), third separation layer (37) and back reflection layer (38)；
Step 4: preparing first electrode (15) in third doped region (13) upper surface, the preparation the in the 4th doped region (14) upper surface
Two electrodes (16) prepare third electrode (25) in the 7th doped region (23) lower surface, prepare in the 8th doped region (24) lower surface
4th electrode (26) prepares the 5th electrode (35) in the 11st doped region (33) lower surface, in the 12nd doped region (36) following table
Wheat flour is for the 6th electrode (36).
10. a kind of preparation method of vertical stack solar battery according to claim 9, it is characterised in that: wherein walk
Rapid 1 the following steps are included:
Step 1-1: on a surface of monocrystalline substrate by the method for doping, its near-surface region is made to become the 5th doping
Area (21) makes its near-surface region become the 6th doped region on another surface of monocrystalline substrate by the method for doping
(22), the undoped intermediate region of monocrystalline substrate becomes the second base area (20), completes the preparation of basic substrate；
Step 1-2: on the surface of the 5th doped region (21) of a basic substrate, the 7th doped region is prepared using epitaxy technique
(23), the preparation of the first outside substrate is completed；
Step 1-3: on the surface of the 6th doped region (22) of another basic substrate, the 8th doped region is prepared using epitaxy technique
(24), the preparation of second of outside substrate is completed；
Step 1-4: by multiple basic substrates according to the 5th doped region (21) and another basic substrate of a basic substrate
The sequence that 6th doped region (22) connects successively is stacked together, and by the first outside, substrate is placed on the basic base being stacked together
Second of outside substrate, is placed on the lowest part for the basic substrate being stacked together by the topmost of piece, and the of above-mentioned all substrates
Five doped regions (21) are upper, and the 6th doped region (22) is under；
Step 1-5: being put into key and machine for the substrate being stacked together, carry out heating pressurization key and, make adjacent substrates key and to one
It rises and ultimately forms an entirety；
Step 1-6: key is successively cut along vertical substrate surface direction and to whole substrate is formed together, prepares a series of
The rectangular vertical structure being made of multiple basic units being repeated cyclically and two sides doped region of shape；
Step 1-7: the damaging layer on vertical structure surface is eroded with nitric acid, hydrofluoric acid mixed solution；
Step 1-8: the first separation layer (27) and the second separation layer (28) are prepared respectively on two surfaces of vertical structure.
11. a kind of preparation method of vertical stack solar battery according to claim 9, it is characterised in that: wherein walk
Rapid 2 the following steps are included:
Step 2-1: single-layer or multi-layer tungsten disulfide is prepared on the surface of the first separation layer (27)；
Step 2-2: pass through the of the duplicate basic unit of method manufacturing cycle of doping on single-layer or multi-layer tungsten disulfide
The third doped region (13) and the 4th doped region of one base area (10), the first doped region (11), the second doped region (12) and two sides
(14)。
12. a kind of preparation method of vertical stack solar battery according to claim 9, it is characterised in that: wherein walk
Rapid 3 the following steps are included:
Step 3-1: multilayer black phosphorus is prepared on the surface of the second separation layer (28)；
Step 3-2: passing through the third base area (30) of the duplicate basic unit of method manufacturing cycle of doping on multilayer black phosphorus,
The 11st doped region (33) and the 12nd doped region (34) of 9th doped region (31), the tenth doped region (32) and two sides；
Step 3-3: preparing third separation layer (37) on the basic unit surface that is repeated cyclically, third separation layer (37) covering the
The end of 11 doped regions (33) and the 12nd doped region (34)；
Step 3-4: back reflection layer (38) are prepared on the surface of third separation layer (37).
13. a kind of preparation method of vertical stack solar battery according to claim 10, it is characterised in that: wherein walk
The extension of rapid 1-2 and 1-3 is the method using laser short annealing after normal pressure extension or magnetron sputtering amorphous silicon membrane.
14. a kind of preparation method of vertical stack solar battery according to claim 10, it is characterised in that: wherein walk
Rapid 1-8 preparation the first separation layer (27), the second separation layer (28) are using thermal oxide, chemical vapor deposition, magnetron sputtering, ion
Beam sputtering, spraying or the method for spin coating.
15. a kind of preparation method of vertical stack solar battery according to claim 11, it is characterised in that: wherein walk
Rapid 2-1 and step 3-1 is using electron beam evaporation, thermal evaporation, magnetron sputtering, chemical vapor deposition, chemical plating, metallorganic
The method of chemical vapor deposition or trans-printing.
16. a kind of preparation method of vertical stack solar battery according to claim 11, it is characterised in that: wherein walk
It is using Cl that rapid 2-2, which forms n-type doping,2、CH2Cl2Or CHCl3The combination of one or more of gas is to single-layer or multi-layer two
The method of tungsten sulfide surface progress reactive ion etching；Forming p-type doping is the method using ion implanting niobium atom.
17. a kind of preparation method of vertical stack solar battery according to claim 12, it is characterised in that: wherein walk
It is the method using thermal diffusion that rapid 3-2, which forms n-type doping, and diffusion source is trimethyl aluminium；Forming p-type doping is using ion implanting
The method of selenium atom.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910006482.4A CN109801991B (en) | 2019-01-04 | 2019-01-04 | Vertical laminated solar cell and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910006482.4A CN109801991B (en) | 2019-01-04 | 2019-01-04 | Vertical laminated solar cell and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109801991A true CN109801991A (en) | 2019-05-24 |
| CN109801991B CN109801991B (en) | 2020-08-04 |
Family
ID=66558530
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910006482.4A Active CN109801991B (en) | 2019-01-04 | 2019-01-04 | Vertical laminated solar cell and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109801991B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140264708A1 (en) * | 2011-12-21 | 2014-09-18 | Intermolecular, Inc. | Optical Absorbers |
| CN104617168A (en) * | 2014-12-26 | 2015-05-13 | 天津蓝天太阳科技有限公司 | Radiation-proof three-junction cascade gallium arsenide solar cell and preparation method |
| US20150255666A1 (en) * | 2012-12-18 | 2015-09-10 | International Business Machines Corporation | Monolithic integration of heterojunction solar cells |
| CN106298996A (en) * | 2016-11-07 | 2017-01-04 | 天津理工大学 | A kind of vertical stratification silicon solar cell and preparation method thereof |
| JP2018006524A (en) * | 2016-06-30 | 2018-01-11 | 富士通株式会社 | Semiconductor bulk structure and optical device |
-
2019
- 2019-01-04 CN CN201910006482.4A patent/CN109801991B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140264708A1 (en) * | 2011-12-21 | 2014-09-18 | Intermolecular, Inc. | Optical Absorbers |
| US20150255666A1 (en) * | 2012-12-18 | 2015-09-10 | International Business Machines Corporation | Monolithic integration of heterojunction solar cells |
| CN104617168A (en) * | 2014-12-26 | 2015-05-13 | 天津蓝天太阳科技有限公司 | Radiation-proof three-junction cascade gallium arsenide solar cell and preparation method |
| JP2018006524A (en) * | 2016-06-30 | 2018-01-11 | 富士通株式会社 | Semiconductor bulk structure and optical device |
| CN106298996A (en) * | 2016-11-07 | 2017-01-04 | 天津理工大学 | A kind of vertical stratification silicon solar cell and preparation method thereof |
Non-Patent Citations (3)
| Title |
|---|
| A.JAGER-WALDAU等: "WS2 thin films a new candidate for solar cells", 《IEEE XPLORE》 * |
| MUNKHBAYAR BATMUNKH等: "Black Phosphorus：Synthesis and Application for Solar Cells", 《ADVANCED ENERGY MATERIALS》 * |
| 郐学良: "三结GaAs太阳能电池光电转换效率研究", 《中国优秀硕士学位论文全文数据库工程科技Ⅱ辑》 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109801991B (en) | 2020-08-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8435825B2 (en) | Methods for fabrication of nanowall solar cells and optoelectronic devices | |
| US7977568B2 (en) | Multilayered film-nanowire composite, bifacial, and tandem solar cells | |
| US7893348B2 (en) | Nanowires in thin-film silicon solar cells | |
| JP2999280B2 (en) | Photovoltaic element | |
| KR20140117420A (en) | Buffer layer for improving the performance and stability of surface passivation of si solar cells | |
| JP2000058887A (en) | Fabrication of thin film photovoltaic module having high uniformity interconnect and double layer contact | |
| JPS6348197B2 (en) | ||
| JP6404825B2 (en) | Photoelectric conversion element | |
| CN103038897A (en) | Thin film solar cell with microcrystalline absorpber layer and passivation layer and method for manufacturing such a cell | |
| CN103000742A (en) | Solar battery with band gap gradual changing silicon quantum dot multilayer film and production method thereof | |
| Zeman | Thin-film silicon PV technology | |
| JP5001985B2 (en) | A method of forming a GexSi1-x buffer layer of a solar energy battery on a silicon wafer. | |
| EP3371833A1 (en) | Photovoltaic device and method for manufacturing the same | |
| JP2001267598A (en) | Laminated solar cell | |
| CN102903775A (en) | crystalline silicon solar cell structure used for light condensation and laser energy transmission and manufacture method of crystalline silicon solar cell structure | |
| JP2001028452A (en) | Photoelectric conversion device | |
| Angadi et al. | A review on different types of materials employed in solar photovoltaic panel | |
| JP2013214672A (en) | Photoelectric conversion element | |
| CN106062973B (en) | Photoelectric conversion device | |
| RU2632266C2 (en) | Heterostructure photoelectric converter based on crystalline silicon | |
| CN109801991A (en) | A kind of vertical stack solar battery and preparation method thereof | |
| JP4412766B2 (en) | Thin film polycrystalline Si solar cell | |
| CN106298996A (en) | A kind of vertical stratification silicon solar cell and preparation method thereof | |
| JP2011018884A (en) | Photovoltaic device and manufacturing method thereof | |
| JP2004335733A (en) | Thin film solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20220617 Address after: 300461 room 214, building 3, No. 48, Jialingjiang Road, Lingang Economic Zone, Binhai New Area, Tianjin Patentee after: TJU BINHAI INDUSTRIAL RESEARCH INSTITUTE CO.,LTD. Address before: 300384 No. 391 Binshui West Road, Xiqing District, Tianjin Patentee before: TIANJIN University OF TECHNOLOGY |
|
| TR01 | Transfer of patent right | ||
| OL01 | Intention to license declared |