CN207320146U - A kind of high-efficiency three-joint cascade gallium arsenide solar cell with Flouride-resistani acid phesphatase structure - Google Patents
A kind of high-efficiency three-joint cascade gallium arsenide solar cell with Flouride-resistani acid phesphatase structure Download PDFInfo
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Abstract
The utility model discloses a kind of high-efficiency three-joint with Flouride-resistani acid phesphatase structure to cascade gallium arsenide solar cell, including p-type contact layer, bottom battery, the first tunnel junctions, the DBR1 with strain structure, middle battery, the second tunnel junctions, the DBR2 with strain structure, top battery and N-type contact layer.Battery uses InxGa1 xAs materials in the utility model, 1.1~1.4eV of energy gap, top battery uses GayIn1 yP materials, energy gap is 1.6~1.9eV, stress and filtering dislocation are discharged in the form of DBR1 and DBR2, can greatly improve the incomplete problem of stress release that traditional direct growth cushion is brought, effectively solves the warpage situation of epitaxial wafer, improve the thickness of epitaxial growth and the uniformity of doping at the same time, improve the yield rate and performance of solar cell；On the other hand, due to the interim form using DBR1 and DBR2, absorption of the battery to sunlight can be improved, improves anti-radiation performance.
Description
Technical field
The utility model belongs to high performance solar batteries technical field, and in particular to a kind of efficient with Flouride-resistani acid phesphatase structure
Three knots cascade gallium arsenide solar cell, and the utility model further relates to the manufacture method of the solar cell.
Background technology
With the continuous progress of Space Science and Technology, the function of spacecraft becomes increasingly complex, the requirement to power source loads power
It is higher and higher, the requirement of higher certainly will be proposed to the performance of solar cell, especially photoelectric conversion efficiency.And GaAs
(GaAs) three-junction solar battery with advantages such as its higher transfer efficiency, long-life and excellent reliabilities in space field
It is used widely, becomes the main power source of spacecraft.The GaAs three-junction solar battery knots for the Ge substrate growths applied at present
Structure is GaInP/GaAs/Ge, is the battery structure of Lattice Matching, its peak efficiency is close to 30% (AM0), due to being subject to band gap
Unmatched limitation, transfer efficiency are difficult to further improve.In contrast, the GaAs three-junction solar batteries of band-gap can have
Effect is reduced wastes problem since band gap mismatches the solar energy brought, is further improving three-junction solar battery transfer efficiency side
Mask has a clear superiority, the structure using with the unmatched middle top battery of substrate, for obtain crystal quality it is high middle top electricity
Pond, Normal practice are to use various cushions, discharge the stress brought by lattice mismatch and dislocation, though such way
The available crystalline material of solar cell can so be obtained, but remain larger stress, making to chip and after
Continuous installation all brings great inconvenience, while reduces the yield rate of product, increases product cost.
Utility model content
The purpose of the utility model is to overcome the deficiencies in the prior art, there is provided one kind is rational in infrastructure, technique is simple, performance
Reliably, the high-efficiency three-joint cascade gallium arsenide solar cell of the low a kind of Flouride-resistani acid phesphatase structure of production cost.
The technical solution of the utility model is as follows：
A kind of high-efficiency three-joint cascade gallium arsenide solar cell with Flouride-resistani acid phesphatase structure, it is characterised in that contacted including p-type
Layer, bottom battery, the first tunnel junctions, the DBR1 (the first distribution type Bragg reflector) with strain structure, middle battery, second
Tunnel junctions, the DBR2 (the second distribution type Bragg reflector) with strain structure, top battery and N-type contact layer；
The bottom battery, middle battery and top battery are three knot batteries, are arranged in order from the bottom to top；
Connected between the bottom battery and middle battery by the first tunnel junctions；
DBR1 is additionally provided between first tunnel junctions and the middle battery；
Connected between the middle battery and the top battery by the second tunnel junctions；
DBR2 is additionally provided between second tunnel junctions and the top battery；
The bottom battery lower floor is additionally provided with p-type contact layer, and the p-type contact layer is p-type Ge substrates；
The upper strata of the top battery is additionally provided with N-type contact layer, and the N-type contact layer is the GaAs Window layers of GaAs materials.
As an optimization, the bottom battery includes P-Ge bases, N-Ge launch sites and GaInP nucleating layers successively from the bottom to top；
Pass through PH in p-type contact layer surface3N-Ge launch sites and GaInP nucleating layers are diffuseed to form, the P-Ge bases connect for p-type
Contact layer and the transition region of N-Ge launch sites, base of the P-Ge bases as bottom battery；0.1~0.3 μ of N-Ge launch sites thickness
M, the GaInP are nucleated 0.03~0.10 μm of layer thickness；The bottom battery energy gap is 0.67eV；
As an optimization, first tunnelling becomes N++GaAs/P++GaAs, wherein, N++GaAs layers and P++GaAs layer thickness is equal
At 0.01~0.04 μm, N++The dopant of GaAs combines for Te, Se, Si one or more therein, doping concentration 3 × 1018
~1 × 1019/cm3；P++The dopant of GaAs combines for Mg, Zn, C one or more therein, and doping concentration requirement 2 ×
1019~5 × 1019/cm3；
As an optimization, InGaAs cushions, the InGaAs cushions are equipped between first tunnel junctions and bottom battery
Thickness is 0.5~1.5 μm；
As an optimization, the DBR1 (the first distributed Bragg reflector) is by 10~30 pairs of InAlAs/InGaAs structures
Composition, wherein, in adjacent each pair InAlAs/InGaAs structures, the increase of In molar constituents staged, gradient are in InGaAs
1%~3%, initial In molar constituents are In molar constituents staged increase in 1%, InAlAs, and gradient is 1%~3%, initially
In molar constituents are 0.5%；In each pair InAlAs/InGaAs structures, InAlAs structures, the thickness of InGaAs structures are according to λ/4n
Calculate, wherein 850nm≤λ≤1200nm, n are the refractive index of corresponding A lGaAs or InGaAs material；
As an optimization, the middle battery includes InAlAs back ofs the body electric field, In successively from the bottom to topxGa1-xAs bases, InxGa1- xAs launch sites, AlInP or GaInP Window layers composition, wherein InxGa1-xAs bases and InxGa1-xThe component x of In in As launch sites
Scope be 0.01≤x≤0.22；The middle battery energy gap is 1.1~1.4eV, absorbs more sun beneficial to middle battery
Light, the current density of battery in raising；The thickness of InxGa1-xAs bases is 1.5~2.5 μm, the thickness of InxGa1-xAs launch sites
Spend for 0.1~0.2 μm, AlInP or GaInP window layer thickness is 0.05~0.15 μm；AlInP or GaInP Window layers are AlInP
Window layer or GaInP Window layers；
As an optimization, second tunnelling becomes N++GaInP/P++AlGaAs, wherein, N++GaInP layers and P++AlGaAs
The thickness of layer is 0.01~0.04 μm, N++The dopant of GaInP is Te, Se, Si one or more kinds of combinations therein, is adulterated
Concentration 3 × 1018~1 × 1019/cm3；P++The dopant of AlGaAs is Mg, Zn, C one or more kinds of combinations therein, is adulterated
Concentration requirement 2 × 1019~5 × 1019/cm3；
As an optimization, the DBR2 (the second distributed Bragg reflector) is by 10~30 pairs of AlInP/AlGaInP structures
Composition, wherein, wherein, first pair of AlInP/AlGaInP structure is consistent with middle battery lattice lattice constant match, adjacent afterwards
The In molar constituents of each pair AlInP/AlGaInP structure structures are reduced according to staged, and In molar constituents gradient is in AlInP
In molar constituents gradient is 1%~3% in 1%~3%, AlGaInP；In each pair AlInP/AlGaInP structures, AlInP structures,
The thickness of AlGaInP structures is calculated according to λ/4n, and wherein 650nm≤λ≤800nm, n are corresponding A lInP or AlGaInP material
Refractive index；
As an optimization, the top battery includes AlGaInP back ofs the body electric field, Ga successively from the bottom to topyIn1-yP bases, GayIn1-yP
Launch site and AlInP Window layers, wherein GayIn1-yP bases and GayIn1-yThe scope of the component y of Ga is 0.30≤y in P launch sites
≤ 0.50, the top battery energy gap is 1.6~1.9eV, and AlGaInP back of the body electric field thickness is 0.02~0.15 μm, GayIn1- yP bases and GayIn1-yThe gross thickness of P launch sites is 0.5~1 μm, and 0.03~0.05 μm of AlInP window layer thickness, is conducive to push up
Battery absorbs more sunlights, improves the current density of top battery；
As an optimization, the p-type contact layer is the substrate of p-type Ge, and dopant Ga, doping concentration is 1 × 1018~10 ×
1018/cm3；
As an optimization, the N-type contact layer is the GaAs Window layers of GaAs materials, and growth thickness is 0.3~0.6 μm, is mixed
Miscellaneous dose is Te, and Se, Si one or more kinds of combinations therein, doping concentration is 3 × 1018~9 × 1018/cm3。
The production method that the utility model further includes the high-efficiency three-joint cascade gallium arsenide solar cell of above-mentioned Flouride-resistani acid phesphatase structure,
Its step is,
(1) bottom battery is prepared：Bottom battery includes P-Ge bases, N-Ge launch sites and GaInP nucleating layers successively from the bottom to top；
Pass through PH in p-type contact layer surface3N-Ge launch sites and GaInP nucleating layers are diffuseed to form, the P-Ge bases are p-type contact layer
With the transition region of N-Ge launch sites, base of the P-Ge bases as bottom battery；0.1~0.3 μm of N-Ge launch sites thickness, institute
State GaInP 0.03~0.10 μm of layer thickness of nucleation；The bottom battery energy gap is 0.67eV；The p-type contact layer is p-type Ge
Substrate, dopant Ga, doping concentration is 1 × 1018~10 × 1018/cm3；
(2) the first tunnel junctions are prepared：In one tunnel junctions of surface growth regulation of the InGaAs cushions, first tunnelling
Become N++GaAs/P++GaAs, wherein, N++GaAs layers and P++GaAs layer thickness is at 0.01~0.04 μm, N++The doping of GaAs
Agent is combined for Te, Se, Si one or more therein, doping concentration 3 × 1018~1 × 1019/cm3；P++The dopant of GaAs
For Mg, Zn, C one or more kinds of combinations therein, doping concentration requirement 2 × 1019~5 × 1019/cm3；
(3) DBR1 is prepared：Grow DBR1 on the surface of first tunnel junctions, the DBR1 (has the of strain structure
One distributed Bragg reflector) by 10~30 pairs of InAlAs/InGaAs structure compositions, wherein, adjacent each pair InAlAs/
In InGaAs structures, In molar constituents staged increase in InGaAs, gradient is 1%~3%, and initial In molar constituents are 1%,
In molar constituents staged increase in InAlAs, gradient are 1%~3%, and initial In molar constituents are 0.5%；Each pair InAlAs/
In InGaAs structures, InAlAs structures, the thickness of InGaAs structures are calculated according to λ/4n, and wherein 850nm≤λ≤1200nm, n are
The refractive index of corresponding A lGaAs or InGaAs material；
(4) battery in preparing：The battery in the growth of the surface of the DBR1, the middle battery include successively from the bottom to top
InAlAs back ofs the body electric field, InxGa1-xAs bases, InxGa1-xAs launch sites, AlInP or GaInP Window layers composition, wherein InxGa1- xAs bases and InxGa1-xThe scope of the component x of In is 0.01≤x≤0.22 in As launch sites；The middle battery energy gap is
1.1~1.4eV, absorbs more sunlights, the current density of battery in raising beneficial to middle battery；The thickness of InxGa1-xAs bases
Spend for 1.5~2.5 μm, the thickness of InxGa1-xAs launch sites is 0.1~0.2 μm, AlInP or GaInP window layer thickness is
0.05~0.15 μm；AlInP or GaInP Window layers are AlInP Window layers or GaInP Window layers；
(5) the second tunnel junctions are prepared：In two tunnel junctions of surface growth regulation of the middle battery, second tunnelling becomes N++
GaInP/P++AlGaAs, wherein, N++GaInP layers and P++AlGaAs layers of thickness is 0.01~0.04 μm, N++GaInP's mixes
Miscellaneous dose is combined for Te, Se, Si one or more therein, doping concentration 3 × 1018~1 × 1019/cm3；P++AlGaAs's mixes
Miscellaneous dose is Mg, Zn, C one or more kinds of combinations therein, and doping concentration requires 2 × 1019~5 × 1019/cm3；
(6) DBR2 is prepared：Grow DBR2 on the surface of second tunnel junctions, the DBR2 (has the of strain structure
Two distributed Bragg reflectors) by 10~30 pairs of AlInP/AlGaInP structure compositions, wherein, first couple of AlInP/AlGaInP
Structure is consistent with middle battery lattice lattice constant match, In moles of each pair AlInP/AlGaInP structure structures adjacent afterwards
Component is reduced according to staged, and In molar constituents gradient is that In molar constituent gradients are in 1%~3%, AlGaInP in AlInP
1%~3%；In each pair AlInP/AlGaInP structures, AlInP structures, the thickness of AlGaInP structures are calculated according to λ/4n, wherein
650nm≤λ≤800nm, n are the refractive index of corresponding A lInP or AlGaInP material；
(7) top battery is prepared：In the surface of DBR2 growth top battery, the top battery includes successively from the bottom to top
AlGaInP back ofs the body electric field, GayIn1-yP bases, GayIn1-yP launch sites and AlInP Window layers, wherein GayIn1-yP bases and
GayIn1-yThe scope of the component y of Ga is 0.30≤y≤0.50 in P launch sites, the top battery energy gap for 1.6~
1.9eV, AlGaInP back of the body electric field thickness are 0.02~0.15 μm, GayIn1-yP bases and GayIn1-yThe gross thickness of P launch sites is
0.5~1 μm, 0.03~0.05 μm of AlInP window layer thickness, is conducive to push up the more sunlights of battery absorption, improves top battery
Current density；
(8) N-type contact layer is prepared：N-type contact layer is grown on the surface of the top battery, the N-type contact layer is GaAs
The GaAs Window layers of material, growth thickness are 0.3~0.6 μm, dopant Te, Se, Si one or more kinds of combinations therein,
Doping concentration is 3 × 1018~9 × 1018/cm3。
As an optimization, step (1) prepares InGaAs cushions afterwards：In the surface of bottom battery growth InGaAs bufferings
Layer, the InGaAs buffer layer thicknesses are 0.5~1.5 μm.
The utility model battery includes p-type contact layer and passes through PH3The bottom battery diffuseed to form, the first tunnel junctions, DBR1
(first group of Bragg reflector with strain structure), middle battery, the second tunnel junctions, DBR2 (have the second of strain structure
Group Bragg reflector), push up battery and N-type contact layer.In the utility model, middle battery uses InxGa1-xAs materials, prohibits
1.1~1.4eV of bandwidth, top battery use GayIn1-yP materials, and energy gap is 1.6~1.9eV, using DBR1 and DBR2
Form release stress and filtering dislocation, it is incomplete can greatly to improve the stress release that traditional direct growth cushion is brought
The problem of, the warpage situation of epitaxial wafer is effectively solved, while improve the thickness of epitaxial growth and the uniformity of doping, improve the sun
The yield rate and performance of battery.On the other hand, due to the interim form using DBR1 and DBR2, battery can be improved to sunlight
Absorption, improve anti-radiation performance.
Brief description of the drawings
The structure diagram of Fig. 1 the utility model gallium arsenide solar cells
Embodiment
It is embodiment below, it is intended to the utility model is described further, the utility model can have a variety of differences
Form, which is merely illustrative, and should not be construed as limited to embodiments set forth herein.
Embodiment 1
It is a kind of with Flouride-resistani acid phesphatase structure high-efficiency three-joint cascade gallium arsenide solar cell, including p-type contact layer, bottom battery,
First tunnel junctions, the DBR1 (the first distribution type Bragg reflector) with strain structure, middle battery, the second tunnel junctions, tool
There are the DBR2 (the second distribution type Bragg reflector), top battery and N-type contact layer of strain structure；
The bottom battery, middle battery and top battery are three knot batteries, are arranged in order from the bottom to top；
The bottom battery includes P-Ge bases, N-Ge launch sites and GaInP nucleating layers successively from the bottom to top；In the p-type
Contact layer surface passes through PH3N-Ge launch sites and GaInP nucleating layers are diffuseed to form, the P-Ge bases are p-type contact layer and N-
The transition region of Ge launch sites, base of the P-Ge bases as bottom battery；0.1~0.3 μm of N-Ge launch sites thickness, it is described
GaInP is nucleated 0.03~0.10 μm of layer thickness；The bottom battery energy gap is 0.67eV；
Connected between the bottom battery and middle battery by the first tunnel junctions；
InGaAs cushions are equipped between first tunnel junctions and bottom battery, the InGaAs buffer layer thicknesses are 0.5
~1.5 μm；
First tunnelling becomes N++GaAs/P++GaAs, wherein, N++GaAs layers and P++GaAs layer thickness 0.01~
0.04 μm, N++The dopant of GaAs combines for Te, Se, Si one or more therein, doping concentration 3 × 1018~1 ×
1019/cm3；P++The dopant of GaAs is Mg, Zn, C one or more kinds of combinations therein, and doping concentration requires 2 × 1019~5
×1019/cm3；
DBR1 is additionally provided between first tunnel junctions and the middle battery；
The DBR1 (the first distributed Bragg reflector) by 10~30 pairs of InAlAs/InGaAs structure compositions, wherein,
In adjacent each pair InAlAs/InGaAs structures, In molar constituents staged increase in InGaAs, gradient is 1%~3%, just
Beginning In molar constituent is In molar constituents staged increase in 1%, InAlAs, and gradient is 1%~3%, initial In molar constituents
For 0.5%；In each pair InAlAs/InGaAs structures, InAlAs structures, the thickness of InGaAs structures are calculated according to λ/4n, wherein
850nm≤λ≤1200nm, n are the refractive index of corresponding A lGaAs or InGaAs material；
The middle battery includes InAlAs back ofs the body electric field, In successively from the bottom to topxGa1-xAs bases, InxGa1-xAs launch sites,
AlInP or GaInP Window layers form, wherein InxGa1-xAs bases and InxGa1-xThe scope of the component x of In is in As launch sites
0.01≤x≤0.22；The middle battery energy gap is 1.1~1.4eV, absorbs more sunlights beneficial to middle battery, improves
The current density of middle battery；The thickness of InxGa1-xAs bases is 1.5~2.5 μm, and the thickness of InxGa1-xAs launch sites is 0.1
~0.2 μm, AlInP or GaInP window layer thickness is 0.05~0.15 μm；AlInP or GaInP Window layers are AlInP Window layers
Or GaInP Window layers；
Connected between the middle battery and the top battery by the second tunnel junctions；
Second tunnelling becomes N++GaInP/P++AlGaAs, wherein, N++GaInP layers and P++AlGaAs layers of thickness
It is 0.01~0.04 μm, N++The dopant of GaInP combines for Te, Se, Si one or more therein, and doping concentration 3 ×
1018~1 × 1019/cm3；P++The dopant of AlGaAs is Mg, Zn, C one or more kinds of combinations therein, and doping concentration requires
2×1019~5 × 1019/cm3；
DBR2 is additionally provided between second tunnel junctions and the top battery；
The DBR2 (the second distributed Bragg reflector) by 10~30 pairs of AlInP/AlGaInP structure compositions, wherein,
Wherein, first pair of AlInP/AlGaInP structure is consistent with middle battery lattice lattice constant match, each pair AlInP/ adjacent afterwards
The In molar constituents of AlGaInP structure structures are reduced according to staged, and In molar constituents gradient is 1%~3% in AlInP,
In molar constituents gradient is 1%~3% in AlGaInP；In each pair AlInP/AlGaInP structures, AlInP structures, AlGaInP knots
The thickness of structure is calculated according to λ/4n, and wherein 650nm≤λ≤800nm, n are the refractive index of corresponding A lInP or AlGaInP material；
The top battery includes AlGaInP back ofs the body electric field, Ga successively from the bottom to topyIn1-yP bases, GayIn1-yP launch sites and
AlInP Window layers, wherein GayIn1-yP bases and GayIn1-yThe scope of the component y of Ga is 0.30≤y≤0.50 in P launch sites,
The top battery energy gap is 1.6~1.9eV, and AlGaInP back of the body electric field thickness is 0.02~0.15 μm, GayIn1-yP bases and
GayIn1-yThe gross thickness of P launch sites is 0.5~1 μm, 0.03~0.05 μm of AlInP window layer thickness, is conducive to push up battery absorption
More sunlights, improve the current density of top battery；
The bottom battery lower floor is additionally provided with p-type contact layer, and the p-type contact layer is p-type Ge substrates；The p-type Ge substrates
Dopant be Ga, doping concentration is 1 × 1018~10 × 1018/cm3；
The upper strata of the top battery is additionally provided with N-type contact layer, and the N-type contact layer is the GaAs Window layers of GaAs materials,
The GaAs Window layers growth thickness is 0.3~0.6 μm, and dopant Te, Se, Si one or more kinds of combinations therein, mix
Miscellaneous concentration is 3 × 1018~9 × 1018/cm3。
Embodiment 2
Each layer growth uses MOCVD technologies (Metal Organic Chemical Vapor in the present embodiment
Deposition, metallo-organic compound chemical gaseous phase deposition).
The production method of the high-efficiency three-joint cascade gallium arsenide solar cell of Flouride-resistani acid phesphatase structure described in embodiment 1, its step is,
(1) bottom battery is prepared：Bottom battery includes P-Ge bases, N-Ge launch sites and GaInP nucleating layers successively from the bottom to top；
Pass through PH in p-type contact layer surface3N-Ge launch sites and GaInP nucleating layers are diffuseed to form, the P-Ge bases are p-type contact layer
With the transition region of N-Ge launch sites, base of the P-Ge bases as bottom battery；0.1~0.3 μm of N-Ge launch sites thickness, institute
State GaInP 0.03~0.10 μm of layer thickness of nucleation；The bottom battery energy gap is 0.67eV；The p-type contact layer is p-type Ge
Substrate, dopant Ga, doping concentration is 1 × 1018~10 × 1018/cm3；
(2) InGaAs cushions are prepared：InGaAs cushions, the InGaAs bufferings are grown on the surface of the bottom battery
Layer thickness is 0.5~1.5 μm.
(3) the first tunnel junctions are prepared：In one tunnel junctions of surface growth regulation of the InGaAs cushions, first tunnelling
Become N++GaAs/P++GaAs, wherein, N++GaAs layers and P++GaAs layer thickness is at 0.01~0.04 μm, N++The doping of GaAs
Agent is combined for Te, Se, Si one or more therein, doping concentration 3 × 1018~1 × 1019/cm3；P++The dopant of GaAs
For Mg, Zn, C one or more kinds of combinations therein, doping concentration requirement 2 × 1019~5 × 1019/cm3；
(4) DBR1 is prepared：Grow DBR1 on the surface of first tunnel junctions, the DBR1 (has the of strain structure
One distributed Bragg reflector) by 10~30 pairs of InAlAs/InGaAs structure compositions, wherein, adjacent each pair InAlAs/
In InGaAs structures, In molar constituents staged increase in InGaAs, gradient is 1%~3%, and initial In molar constituents are 1%,
In molar constituents staged increase in InAlAs, gradient are 1%~3%, and initial In molar constituents are 0.5%；Each pair InAlAs/
In InGaAs structures, InAlAs structures, the thickness of InGaAs structures are calculated according to λ/4n, and wherein 850nm≤λ≤1200nm, n are
The refractive index of corresponding A lGaAs or InGaAs material；
(5) battery in preparing：The battery in the growth of the surface of the DBR1, the middle battery include successively from the bottom to top
InAlAs back ofs the body electric field, InxGa1-xAs bases, InxGa1-xAs launch sites, AlInP or GaInP Window layers composition, wherein InxGa1- xAs bases and InxGa1-xThe scope of the component x of In is 0.01≤x≤0.22 in As launch sites；The middle battery energy gap is
1.1~1.4eV, absorbs more sunlights, the current density of battery in raising beneficial to middle battery；The thickness of InxGa1-xAs bases
Spend for 1.5~2.5 μm, the thickness of InxGa1-xAs launch sites is 0.1~0.2 μm, AlInP or GaInP window layer thickness is
0.05~0.15 μm；AlInP or GaInP Window layers are AlInP Window layers or GaInP Window layers；
(6) the second tunnel junctions are prepared：In two tunnel junctions of surface growth regulation of the middle battery, second tunnelling becomes N++
GaInP/P++AlGaAs, wherein, N++GaInP layers and P++AlGaAs layers of thickness is 0.01~0.04 μm, N++GaInP's mixes
Miscellaneous dose is combined for Te, Se, Si one or more therein, doping concentration 3 × 1018~1 × 1019/cm3；P++AlGaAs's mixes
Miscellaneous dose is Mg, Zn, C one or more kinds of combinations therein, and doping concentration requires 2 × 1019~5 × 1019/cm3；
(7) DBR2 is prepared：Grow DBR2 on the surface of second tunnel junctions, the DBR2 (has the of strain structure
Two distributed Bragg reflectors) by 10~30 pairs of AlInP/AlGaInP structure compositions, wherein, first couple of AlInP/AlGaInP
Structure is consistent with middle battery lattice lattice constant match, In moles of each pair AlInP/AlGaInP structure structures adjacent afterwards
Component is reduced according to staged, and In molar constituents gradient is that In molar constituent gradients are in 1%~3%, AlGaInP in AlInP
1%~3%；In each pair AlInP/AlGaInP structures, AlInP structures, the thickness of AlGaInP structures are calculated according to λ/4n, wherein
650nm≤λ≤800nm, n are the refractive index of corresponding A lInP or AlGaInP material；
(8) top battery is prepared：In the surface of DBR2 growth top battery, the top battery includes successively from the bottom to top
AlGaInP back ofs the body electric field, GayIn1-yP bases, GayIn1-yP launch sites and AlInP Window layers, wherein GayIn1-yP bases and
GayIn1-yThe scope of the component y of Ga is 0.30≤y≤0.50 in P launch sites, the top battery energy gap for 1.6~
1.9eV, AlGaInP back of the body electric field thickness are 0.02~0.15 μm, GayIn1-yP bases and GayIn1-yThe gross thickness of P launch sites is
0.5~1 μm, 0.03~0.05 μm of AlInP window layer thickness, is conducive to push up the more sunlights of battery absorption, improves top battery
Current density；
(9) N-type contact layer is prepared：N-type contact layer is grown on the surface of the top battery, the N-type contact layer is GaAs
The GaAs Window layers of material, growth thickness are 0.3~0.6 μm, dopant Te, Se, Si one or more kinds of combinations therein,
Doping concentration is 3 × 1018~9 × 1018/cm3。
The utility model bottom battery energy gap is 0.67eV, and middle battery energy gap is 1.1~1.4eV, and top battery is prohibited
Bandwidth is 1.6~1.9eV, reduces the current mismatch between each sub- battery, reduces sunlight loss of energy, improves conversion effect
Rate；Meanwhile the DBR with strain structure of use, it can effectively discharge stress and filtering lattice mistake that lattice mismatch is brought
Dislocation with introducing；The sunlight that is not efficiently absorbed in battery or top battery, improves each height electricity during DBR can effectively reflect
Absorption of the pond to sunlight, at the same be introduced into DBR can be thinned in, top battery thickness, in raising battery with top battery Flouride-resistani acid phesphatase
Performance.
Claims (10)
1. a kind of high-efficiency three-joint cascade gallium arsenide solar cell with Flouride-resistani acid phesphatase structure, it is characterised in that contacted including p-type
Layer, bottom battery, the first tunnel junctions, the DBR1 with strain structure, middle battery, the second tunnel junctions, the DBR2 with strain structure,
Push up battery and N-type contact layer；
The bottom battery, middle battery and top battery are three knot batteries, are arranged in order from the bottom to top；
Connected between the bottom battery and middle battery by the first tunnel junctions；
DBR1 is additionally provided between first tunnel junctions and the middle battery；
Connected between the middle battery and the top battery by the second tunnel junctions；
DBR2 is additionally provided between second tunnel junctions and the top battery；
The bottom battery lower floor is additionally provided with p-type contact layer, and the p-type contact layer is p-type Ge substrates；
The upper strata of the top battery is additionally provided with N-type contact layer, and the N-type contact layer is the GaAs Window layers of GaAs materials.
2. solar cell as claimed in claim 1, it is characterised in that the bottom battery from the bottom to top successively include P-Ge bases,
N-Ge launch sites and GaInP nucleating layers；Pass through PH in p-type contact layer surface3Diffuse to form N-Ge launch sites and GaInP into
Stratum nucleare, the P-Ge bases are the transition region of p-type contact layer and N-Ge launch sites, base of the P-Ge bases as bottom battery；Institute
0.1~0.3 μm of N-Ge launch sites thickness is stated, the GaInP is nucleated 0.03~0.10 μm of layer thickness；The bottom battery energy gap
For 0.67eV.
3. solar cell as claimed in claim 1, it is characterised in that first tunnelling becomes N++GaAs/P++GaAs, wherein, N++GaAs layers and P++GaAs layer thickness is at 0.01~0.04 μm.
4. solar cell as claimed in claim 1, it is characterised in that InGaAs is equipped between first tunnel junctions and bottom battery
Cushion, the InGaAs buffer layer thicknesses are 0.5~1.5 μm.
5. solar cell as claimed in claim 1, it is characterised in that the DBR1 is by 10~30 pairs of InAlAs/InGaAs structures
Composition；In each pair InAlAs/InGaAs structures, InAlAs structures, the thickness of InGaAs structures are calculated according to λ/4n, wherein
850nm≤λ≤1200nm, n are the refractive index of corresponding A lGaAs or InGaAs material.
6. solar cell as claimed in claim 1, it is characterised in that the middle battery includes InAlAs back of the body electricity successively from the bottom to top
Field, InxGa1-xAs bases, InxGa1-xAs launch sites, AlInP or GaInP Window layers composition；The middle battery energy gap is
1.1~1.4eV；The thickness of InxGa1-xAs bases is 1.5~2.5 μm, and the thickness of InxGa1-xAs launch sites is 0.1~0.2 μ
M, AlInP or GaInP window layer thickness are 0.05~0.15 μm；AlInP or GaInP Window layers are AlInP Window layers or GaInP
Window layer.
7. solar cell as claimed in claim 1, it is characterised in that second tunnelling becomes N++GaInP/P++AlGaAs,
Wherein, N++GaInP layers and P++AlGaAs layers of thickness is 0.01~0.04 μm.
8. solar cell as claimed in claim 1, it is characterised in that the DBR2 is by 10~30 pairs of AlInP/AlGaInP structures
Composition；In each pair AlInP/AlGaInP structures, AlInP structures, the thickness of AlGaInP structures are calculated according to λ/4n, wherein
650nm≤λ≤800nm, n are the refractive index of corresponding A lInP or AlGaInP material.
9. solar cell as claimed in claim 1, it is characterised in that the top battery includes AlGaInP and carries on the back successively from the bottom to top
Electric field, GayIn1-yP bases, GayIn1-yP launch sites and AlInP Window layers, the top battery energy gap is 1.6~1.9eV,
AlGaInP back of the body electric field thickness is 0.02~0.15 μm, GayIn1-yP bases and GayIn1-yThe gross thickness of P launch sites is 0.5~1 μ
0.03~0.05 μm of m, AlInP window layer thickness.
10. solar cell as claimed in claim 1, it is characterised in that the N-type contact layer is the GaAs windows of GaAs materials
Layer, growth thickness are 0.3~0.6 μm.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108198891A (en) * | 2018-01-03 | 2018-06-22 | 厦门乾照光电股份有限公司 | Solar cell and preparation method thereof |
| CN109950331A (en) * | 2019-03-22 | 2019-06-28 | 天津三安光电有限公司 | A kind of multijunction solar cell |
| CN112864282A (en) * | 2021-04-23 | 2021-05-28 | 南昌凯迅光电有限公司 | Preparation method of anti-irradiation efficient gallium arsenide solar cell |
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2017
- 2017-08-22 CN CN201721055690.6U patent/CN207320146U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108198891A (en) * | 2018-01-03 | 2018-06-22 | 厦门乾照光电股份有限公司 | Solar cell and preparation method thereof |
| CN108198891B (en) * | 2018-01-03 | 2019-05-10 | 厦门乾照光电股份有限公司 | Solar battery and preparation method thereof |
| CN109950331A (en) * | 2019-03-22 | 2019-06-28 | 天津三安光电有限公司 | A kind of multijunction solar cell |
| CN112864282A (en) * | 2021-04-23 | 2021-05-28 | 南昌凯迅光电有限公司 | Preparation method of anti-irradiation efficient gallium arsenide solar cell |
| CN112864282B (en) * | 2021-04-23 | 2021-11-05 | 南昌凯迅光电有限公司 | Preparation method of anti-irradiation efficient gallium arsenide solar cell |
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