CN104576772B - laser photovoltaic cell and manufacturing method thereof - Google Patents
laser photovoltaic cell and manufacturing method thereof Download PDFInfo
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- CN104576772B CN104576772B CN201310497211.6A CN201310497211A CN104576772B CN 104576772 B CN104576772 B CN 104576772B CN 201310497211 A CN201310497211 A CN 201310497211A CN 104576772 B CN104576772 B CN 104576772B
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a laser photovoltaic cell. The laser photovoltaic cell comprises a semi-insulating substrate, a conductive layer, a barrier layer, a PN joint, a window layer and a contact layer, wherein the conductive layer, the barrier layer, the PN joint, the window layer and the contact layer are sequentially formed on the semi-insulating substrate; an upper electrode is formed on the contact layer; a lower electrode window is formed in the semi-insulating substrate in the vertical direction in a penetrating way and is in contact with the bottom surface of the conductive layer; a lower electrode is arranged on the bottom surface, exposed in the lower electrode window, of the conductive layer. The invention further discloses a manufacturing method of the laser photovoltaic cell. The lower electrode window is etched at the back of the semi-insulating substrate, and a large-area ohmic contact is manufactured below an absorption layer; compared with the situation that the lower electrode is led out of the front surface of a conventional laser photovoltaic device, the laser photovoltaic cell has the advantages that due to the avoidance of long-distance transverse transmission of charges in a lower electrode contact layer, the series resistance of the device is reduced, and the performance of the cell is improved.
Description
Technical field
The application is related to a kind of laser photovoltaic cell and preparation method thereof, more particularly to a kind of laser of back electrode technology
Photovoltaic cell and preparation method thereof.
Background technology
Laser power supply system is the energy delivery system of an innovation, by this system, the light that LASER Light Source is sent
It is transported in laser photovoltaic cell it is provided that stable power supply exports by optical fiber.Electricity ratio is converted into by fiber optic conduction light
Traditional metal wire and coaxial cable power transmission technology have more advantages, can apply and need to eliminate electromagnetic interference or needing
In the case that electronic device is isolated with surrounding, in radio communication, industrial sensor, national defence, aviation, medicine, energy
There is important application in the directions such as source.The operation principle of laser photovoltaic cell is similar with solaode, simply can obtain higher
Conversion efficiency, bigger output voltage, can transmit more energy, light source is using the 790nm-850nm ripple being suitable for fiber-optic transfer
Long laser.
Gaas pn-junction battery can be used for for the laser energy of 808nm being converted to electric energy, as in laser power supply system
Laser battery, but the open-circuit voltage of gaas battery only has for 1v the power supply it is impossible to enough be directly used in electronic circuit.Early
The laser photovoltaic cell of phase is that gaas pn-junction battery is grown on semi-insulating gaas substrate, by etching the side of isolated groove
The battery chip of unit area is isolated by formula, then by way of lead, the series connection of several single junction cell units is obtained high electricity
Pressure output.Due to drawing bottom electrode from front in conventional laser photovoltaic device, in bottom electrode contact layer, the distance of electric charge is horizontal
Transmission leads to series resistance larger.
Content of the invention
It is an object of the invention to provide a kind of laser photovoltaic cell and preparation method thereof, it can draw from front effectively solving electrode
Go out the problem leading to series resistance big.
For achieving the above object, the following technical scheme of present invention offer:
A kind of laser photovoltaic cell of disclosure, including SI-substrate and be sequentially formed in described SI-substrate
On conductive layer, barrier layer, pn-junction, Window layer and contact layer, described contact layer is formed with Top electrode, described is semi-insulating
Substrate is vertically formed through bottom electrode window, and bottom electrode window is contacted with the bottom surface of conductive layer, and described conductive layer is sudden and violent
The bottom surface being exposed in described bottom electrode window is provided with bottom electrode.
Preferably, in above-mentioned laser photovoltaic cell, described SI-substrate is gaas substrate.
Preferably, in above-mentioned laser photovoltaic cell, described bottom electrode be covered in described conductive layer be exposed to described
The bottom surface of bottom electrode window.
Preferably, in above-mentioned laser photovoltaic cell, described conductive layer is p-type gaas conductive layer；Described potential barrier
Layer is p-type algaas or (al) gainp barrier layer；Described pn-junction includes p-type gaas absorbed layer and N-shaped gaas absorbed layer；Institute
The Window layer stated is N-shaped algaas or (al) gainp Window layer；Described contact layer is N-shaped gaas contact layer.
Described (al) gainp refers to gainp or algainp.
Preferably, in above-mentioned laser photovoltaic cell, it is also formed between described SI-substrate and conductive layer
Alas corrosion barrier layer.
Preferably, in above-mentioned laser photovoltaic cell, between described alas corrosion barrier layer and SI-substrate, go back shape
Become to have gaas cushion.
Correspondingly, disclosed herein as well is a kind of manufacture method of laser photovoltaic cell, including step:
S1, in gaas Grown gaas cushion；
S2, on gaas cushion grow alas corrosion barrier layer；
S3, on alas corrosion barrier layer grow p-type doping content 1 × 1018cm-3Above gaas conductive layer, and at this
Doping content 1 × 10 is grown on p-type gaas conductive layer18cm-3Above p-type algaas or (al) gainp barrier layer；
S4, p-type gaas absorbed layer and N-shaped gaas absorbed layer are grown on p-type algaas or (al) gainp barrier layer successively
Form pn-junction；
S5, in pn-junction growth doping content 1 × 1018cm-3Above n-type window layer, described n-type window layer by
alxga1-xAs (x >=0.2) or ga0.51in0.49P forms；
S6, in above-mentioned n-type window layer growth doping content 5 × 1018cm-3Above N-shaped gaas contact layer is used as Europe
Nurse contacts；
S7, on the photovoltaic cell matrix being formed by described step s1 to s6 processing is formed isolation channel, making Top electrode,
SI-substrate back side corrosion bottom electrode window, making bottom electrode, prepared target product.
Preferably, in the manufacture method of above-mentioned laser photovoltaic cell, in described step s7, it is sequentially etched semi-insulating
Substrate, gaas cushion, alas corrosion barrier layer, until expose p-type electric-conducting layer to form bottom electrode window, then again through bottom electrode
Window prepares bottom electrode on p-type electric-conducting layer.
Preferably, in the manufacture method of above-mentioned laser photovoltaic cell, in described step s7, using will not be distributed in
Contact layer below Top electrode removes, and prepares znse/mgf by chemical vapor deposition techniques or coater2Or tio2/sio2Subtract
Reflectance coating.
Compared with prior art, it is an advantage of the current invention that:
1. the laser photovoltaic cell in back electrode technology of present invention design be may produce up to by there being several unit series connection
The output voltage of the three ten-day period of hot season.
2. the present invention is designed at the laser photovoltaic cell of back electrode technology and efficiently solves in conventional laser photovoltaic device
Draw bottom electrode from front and lead to the big problem of series resistance.
Brief description
In order to be illustrated more clearly that the embodiment of the present application or technical scheme of the prior art, below will be to embodiment or existing
Have technology description in required use accompanying drawing be briefly described it should be apparent that, drawings in the following description be only this
Some embodiments described in application, for those of ordinary skill in the art, on the premise of not paying creative work,
Other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 is the cross-sectional view of laser photovoltaic cell matrix in a preferred embodiment of the present invention；
Fig. 2 is the cross-sectional view of isolation channel in laser photovoltaic cell in a preferred embodiment of the present invention；
Fig. 3 is the cross-sectional view of laser photovoltaic cell in a preferred embodiment of the present invention；
Fig. 4 is laser photovoltaic cell upper electrode arrangement schematic diagram in a preferred embodiment of the present invention；
Fig. 5 be electrically insulated in a preferred embodiment of the present invention heat sink on structural representation.
Specific embodiment
In view of many deficiencies of the prior art, how to reduce series resistance, the conversion efficiency of increase laser battery, and
Solve corresponding production technology to be significant.
For this reason, the invention provides laser photovoltaic cell and its processing technology.The feature of this photovoltaic cell is: this photovoltaic
The pn-junction battery of battery system gaas, carries out corrosion in substrate back and forms bottom electrode window.
Further say, this laser photovoltaic cell includes SI-substrate and is sequentially formed on described SI-substrate
Conductive layer, barrier layer, pn-junction, Window layer and contact layer, described contact layer is formed with Top electrode, described semi-insulating lining
Bottom is vertically formed through bottom electrode window, and bottom electrode window is contacted with the bottom surface of conductive layer, and described conductive layer exposes
Bottom surface in described bottom electrode window is provided with bottom electrode.
The manufacture method of aforementioned laser photovoltaic cell comprises the following steps:
S1, in gaas Grown gaas cushion；
S2, on gaas cushion grow alas corrosion barrier layer；
S3, on alas corrosion barrier layer grow p-type doping content 1 × 1018cm-3Above gaas conductive layer, and at this
Doping content 1 × 10 is grown on p-type gaas conductive layer18cm-3Above p-type algaas or (al) gainp barrier layer；
S4, p-type gaas absorbed layer and N-shaped gaas absorbed layer are grown on p-type algaas or (al) gainp barrier layer successively
Form pn-junction；
S5, in pn-junction growth doping content 1 × 1018cm-3Above n-type window layer, described n-type window layer by
alxga1-xAs (x >=0.2) or ga0.51in0.49P forms；
S6, in above-mentioned n-type window layer growth doping content 5 × 1018cm-3Above N-shaped gaas contact layer is used as Europe
Nurse contacts；
S7, on the photovoltaic cell matrix being formed by described step s1 to s6 processing is formed isolation channel, making Top electrode,
SI-substrate back side corrosion bottom electrode window, making bottom electrode, prepared target product.
Each layer in this photovoltaic cell is to grow using mocvd or mbe method to be formed, and the wherein N-shaped of mocvd doping is former
Son is si, se, s or te, and p-type foreign atom is zn, mg or c；The N-shaped foreign atom of mbe is si, se, s or te, and p-type doping is former
Son is be, mg or c
In abovementioned steps (7), n-contact layer, n-type window layer, pn-junction, p-type gesture are sequentially etched by dry or wet etch
Barrier layer, p-type electric-conducting layer, alas corrosion barrier layer and gaas cushion (if there is), until expose the side of semi-insulating gaas substrate
Formula forms isolation channel with each subelement of electric isolation photovoltaic cell device in photovoltaic cell based structures, then in this isolation channel
Middle fill insulant.
In abovementioned steps (7) by dry or wet etch technique be sequentially etched substrate, gaas cushion (if there is),
Alas corrosion barrier layer, until expose, at substrate back, the mode that p-type electric-conducting layer forms anelectrode ohmic contact windows, then again
Prepare bottom electrode through bottom electrode window on p-type electric-conducting layer, this bottom electrode extends to substrate back fixation position, in N-shaped contact
Top electrode is prepared on layer.
Aforementioned bottom electrode, Top electrode are respectively in n-contact layer and p by electron beam evaporation, thermal evaporation or magnetron sputtering
Deposit on type conductive layer one or more layers metal and anneal formation Ohmic contact and make.Further, in n-contact layer shape
After becoming aforementioned Top electrode, also the contact layer not being distributed in immediately below this metal electrode is removed, by chemical vapor deposition skill
Art or coater preparation znse/mgf2Or tio2/sio2Antireflective coating.
Respective electrode on aforementioned battery chip is heat sink with the electric insulation making suitable electrode pattern is directed at bonding, then presses
The Top electrode of one unit is connected by certain order with the bottom electrode of an adjacent unit, is eventually fabricated and is connected by several units
The photovoltaic cell device at two ends.
The laser photovoltaic cell of back electrode technology of the present invention and its preparation technology using semi-insulating gaas as substrate, this battery
P-type electric-conducting layer is exposed by etched substrate and prepares electrode, by the electric insulation that performs suitable electrode pattern heat sink realize several
Being connected in series of element cell, realizing each cell device has the output voltage of several volts, thus obtaining efficient laser battery.
Below in conjunction with accompanying drawing and some preferred embodiments, technical scheme is further described.
Refering to Fig. 1-5, the processing technology of laser photovoltaic cell comprises the following steps:
Application mocvd or mbe method grows the laser photovoltaic cell of back electrode technology
1st, adopt semi-insulating gaas substrate 01, thickness at 200 to 500 μm about, as substrate growth gaas laser photovoltaic
Battery structure material；
2nd, enter mocvd or mbe growth room, first grow the gaas cushion 02 of one layer of 5-100nm, one layer of 5- of regrowth
The alas corrosion barrier layer 03 of 100nm；
3rd, p-type doping content 1 × 10 is grown on above-mentioned corrosion barrier layer 0318cm-3Above gaas conductive layer 04, and
Doping content 1 × 10 is grown on this p-type gaas conductive layer 0418cm-3Above p-type algaas or (al) gainp barrier layer
05, as the back surface field layer of gaas battery；
4th, the p-type doping content growing 2500-3500nm on barrier layer 05 is 1 × 1017-4×1018cm-3Gaas inhale
Receive layer 06；The doping content of the N-shaped of regrowth 100-600nm is 5 × 1016-1×1018cm-3Gaas absorbed layer 07, formed one
Individual pn-junction；
The 5th, the doping content 1 × 10 of 1000-3000nm is grown on gaas absorbed layer 0718cm-3Above N-shaped
alxga1-xAs (x >=0.2) or ga0.51in0.49P Window layer 08；
The 6th, the doping content 5 × 10 of 100-300nm is grown on Window layer 0818cm-3The gaas contact layer of above N-shaped
09, for doing Ohmic contact, photovoltaic cell matrix 10 is so far obtained, shown in ginseng Fig. 1；
7th, on photovoltaic cell matrix, n-contact layer 09, n-type window layer 08, n are sequentially etched by dry or wet etch
Knot absorbed layer 07, p-type absorber layer 06, p-type barrier layer 05, p-type electric-conducting layer 04, corrosion barrier layer 03, gaas cushion 02, until
Semi-insulating gaas substrate 01, then isolation channel 11 is formed by the electrically insulating material such as filler or silicon oxide, shown in ginseng Fig. 2；
8th, auge/ni/au=35/10/100nm, ag are prepared by modes such as electron beam evaporation, thermal evaporation or magnetron sputterings
=1 μm and the Top electrode 12 formation Ohmic contact of au=100nm metal material, and the metal of au=200-1000nm is carried out to it
Electrode thickeies；
9th, substrate 01, cushion 02 and corrosion barrier layer 03 are corroded successively using dry or wet, until exposing conductive layer
04, form anelectrode window 13；
10th, pd/zn/pd/au=5/10/20/ is prepared by modes such as electron beam evaporation, thermal evaporation or magnetron sputterings
200nm, ag=1 μm and the bottom electrode 14 formation Ohmic contact of au=100nm metal material, shown in ginseng Fig. 3；
11st, by wet etching, the contact layer 09 in addition to below electrode of metal 12 is removed；
12nd, antireflection layer, antireflection layer application znse/mgf are prepared by chemical vapor deposition techniques or coater2Or
tio2/sio2Etc. reflection-reducing material；
13rd, pass through will be heat sink with electric insulation for battery back bottom electrode 14 on corresponding anelectrode 15 be directed at bonding, then by one
Corresponding negative electrode 16 on electric insulation that the Top electrode 12 of one unit and an adjacent unit are bonded by fixed order is heat sink is even
Connect, form the two terminal device of six battery series connection, shown in ginseng Fig. 4 and Fig. 5.
The laser battery of the present invention obtains required output voltage, wherein gaas battery by several battery cells in series
Open-circuit voltage be about 1v, so each cell device has several units series connection just to have the output voltage (as 6v) of about several volts.Swash
Light cell be grown on semi-insulating gaas substrate in case realize in subsequent battery processing technique between each unit electricity every
From in substrate back etching ohmic contact windows, by making large area Ohmic contact below absorbed layer, with conventional laser light
The situation drawing bottom electrode from front in volt device is compared, and the distance due to avoiding electric charge in bottom electrode contact layer laterally passes
Defeated, reduce the series resistance of device, improve the performance of battery.
It should be noted that herein, such as first and second or the like relational terms are used merely to a reality
Body or operation are made a distinction with another entity or operation, and not necessarily require or imply these entities or deposit between operating
In any this actual relation or order.And, term " inclusion ", "comprising" or its any other variant are intended to
Comprising of nonexcludability, wants so that including a series of process of key elements, method, article or equipment and not only including those
Element, but also include other key elements being not expressly set out, or also include for this process, method, article or equipment
Intrinsic key element.In the absence of more restrictions, the key element that limited by sentence "including a ..." it is not excluded that
Also there is other identical element including in the process of described key element, method, article or equipment.
The above is only the specific embodiment of the application it is noted that ordinary skill people for the art
For member, on the premise of without departing from the application principle, some improvements and modifications can also be made, these improvements and modifications also should
It is considered as the protection domain of the application.
Claims (9)
1. a kind of manufacture method of laser photovoltaic cell is it is characterised in that include step:
S1, in gaas Grown gaas cushion；
S2, on gaas cushion grow alas corrosion barrier layer；
S3, on alas corrosion barrier layer grow p-type doping content 1 × 1018cm-3Above gaas conductive layer, and in this p-type
Doping content 1 × 10 is grown on gaas conductive layer18cm-3Above p-type algaas or (al) gainp barrier layer；
S4, grow p-type gaas absorbed layer successively in p-type algaas or (al) gainp barrier layer and N-shaped gaas absorbed layer is formed
Pn-junction；
S5, in pn-junction growth doping content 1 × 1018cm-3Above n-type window layer, described n-type window layer is by alxga1- xAs, x >=0.2 or ga0.51in0.49P forms；
S6, in above-mentioned n-type window layer growth doping content 5 × 1018cm-3Above N-shaped gaas contact layer connects as ohm
Touch；
S7, on the photovoltaic cell matrix being formed by described step s1 to s6 processing forms isolation channel, make Top electrode, exhausted half
Edge substrate back is corroded the bottom electrode window being contacted with the bottom surface of conductive layer and is exposed to described bottom electrode window in described conductive layer
Bottom electrode, prepared target product are made on the bottom surface in mouthful.
2. laser photovoltaic cell according to claim 1 manufacture method it is characterised in that: in described step s7, according to
Secondary etching SI-substrate, gaas cushion, alas corrosion barrier layer, until exposing p-type electric-conducting layer to form bottom electrode window, and
Prepare bottom electrode through bottom electrode window on p-type electric-conducting layer more afterwards.
3. laser photovoltaic cell according to claim 1 manufacture method it is characterised in that: in described step s7, adopt
With removing the contact layer not being distributed in below Top electrode, znse/mgf is prepared by chemical vapor deposition techniques or coater2
Or tio2/sio2Antireflective coating.
4. the laser photovoltaic cell that the method according to any one of claims 1 to 3 makes is it is characterised in that include half absolutely
Edge substrate and be sequentially formed in conductive layer on described SI-substrate, barrier layer, pn-junction, Window layer and contact layer, described
Contact layer on be formed with Top electrode, described SI-substrate is vertically formed through bottom electrode window, bottom electrode
Window is contacted with the bottom surface of conductive layer, and the bottom surface that described conductive layer is exposed in described bottom electrode window is provided with bottom electrode.
5. laser photovoltaic cell according to claim 4 it is characterised in that: described SI-substrate be gaas substrate.
6. laser photovoltaic cell according to claim 4 it is characterised in that: described bottom electrode is covered in described conductive layer
It is exposed to the bottom surface of described bottom electrode window.
7. laser photovoltaic cell according to claim 4 it is characterised in that: described conductive layer be p-type gaas conductive layer；
Described barrier layer is p-type algaas or (al) gainp barrier layer；Described pn-junction includes p-type gaas absorbed layer and N-shaped gaas
Absorbed layer；Described Window layer is N-shaped algaas or (al) gainp Window layer；Described contact layer is N-shaped gaas contact layer.
8. laser photovoltaic cell according to claim 7 it is characterised in that: between described SI-substrate and conductive layer
It is also formed with alas corrosion barrier layer.
9. laser photovoltaic cell according to claim 8 it is characterised in that: described alas corrosion barrier layer and semi-insulating lining
It is also formed with gaas cushion between bottom.
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