CN103000758A - Method for manufacturing double-faced epitaxial growth GaAs triple-junction solar cell - Google Patents

Method for manufacturing double-faced epitaxial growth GaAs triple-junction solar cell Download PDF

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CN103000758A
CN103000758A CN201210378162XA CN201210378162A CN103000758A CN 103000758 A CN103000758 A CN 103000758A CN 201210378162X A CN201210378162X A CN 201210378162XA CN 201210378162 A CN201210378162 A CN 201210378162A CN 103000758 A CN103000758 A CN 103000758A
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gaas
thickness
doping content
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CN103000758B (en
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王帅
高鹏
刘如彬
康培
孙强
穆杰
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Cetc Blue Sky Technology Co ltd
Cetc Energy Co ltd
Tianjin Lantian Solar Tech Co ltd
CETC 18 Research Institute
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Tianjin Lantian Solar Tech Co ltd
CETC 18 Research Institute
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract

The invention relates to a method for manufacturing a double-faced epitaxial growth GaAs triple-junction solar cell. The method includes sequentially forming a GaAs buffer layer, an In<x>(Al<y>Ga<1-y>)<1-x>As gradient layer and a first-junction In<x>Ga<1-x>As cell on one face of a GaAs substrate in an epitaxial growth manner; and sequentially forming a GaAs buffer layer, a first tunnel junction, a second-junction GaAs cell, a second tunnel junction, a third-junction GaInP cell and a GaAs cap layer on the other face of the GaAs substrate in an epitaxial growth manner. The GaAs substrate is turned over to be subjected to double-faced epitaxial growth, so that influence of dislocation due to isolation lattice mismatch to the first-junction cell and the second-junction cell which are grown on the back face of the substrate is avoided, the photovoltaic conversion efficiency of the cell is improved, the stable performance of the cell is guaranteed, a process for manufacturing cell is simplified, the manufacturing cost of the cell is lowered, the cell production efficiency is improved, and mass production is easy to implement.

Description

The preparation method of double-face epitaxial growth GaAs three-joint solar cell
Technical field
The invention belongs to technical field of solar batteries, particularly relate to a kind of preparation method of double-face epitaxial growth GaAs three-joint solar cell.
Background technology
In the solar cell, the raising of photoelectric conversion efficiency is the target that people constantly pursue all the time.At present 41.6% the standard I nGaP/GaAs/Ge three-joint solar cell technology that reached of photoelectric conversion efficiency can not be satisfied with people's further demand.For the photoelectric conversion efficiency that makes solar cell obtains further to promote, people constantly carry on technical development on standard I nGaP/GaAs/Ge three-joint solar cell basis.Find after deliberation, the reverse epitaxial growth of III-V solar cell has become at present, and another improves the important technology of photoelectric conversion efficiency, the supporter that namely shifts by a quadratic-layer, battery at the bottom of the alternative Ge of battery is finished the making of reverse epitaxial growth III-V solar cell at the bottom of adopting the technology such as wafer bonding and substrate desquamation with the InGaAs of lattice mismatch.The microcell defective that this reverse growth technology produces lattice mismatch extends to the upper strata, avoided the dislocation of lattice mismatch generation on the impact of other junction batteries, guaranteed at first epitaxially grown Lattice Matching top battery and the perfect epitaxial growth of intermediate cell, thereby made the photoelectric conversion efficiency of solar cell obtain further to promote.But, because the supporter that reverse epitaxially grown solar battery technology not only needs a quadratic-layer to shift, and the wafer bonding that adopts and film-substrate lift-off technology all belong to the processing procedure of off-gauge III-V family solar cell, these off-gauge III-V family solar cell processing procedures can't be compatible with standard I nGaP/GaAs/Ge three-joint solar cell, cause battery performance unstable, and reduced the production efficiency of solar cell, increased the cost of manufacture of battery, aspect feasibility, be not easy to realize.
Summary of the invention
The present invention provides a kind of photoelectric conversion efficiency battery performance high, that be prepared into stable for solving the technical problem that exists in the known technology, technique is simple, cost of manufacture is low, production efficiency is high, is easy to realize the preparation method of the double-face epitaxial growth GaAs three-joint solar cell of large-scale production.
The preparation method of double-face epitaxial growth GaAs three-joint solar cell of the present invention comprises following technical scheme:
The preparation method of double-face epitaxial growth GaAs three-joint solar cell is characterized in: comprise following preparation process:
Step 1, to select thickness be that the GaAs sheet of 500-800 micron is as the GaAs substrate;
Step 2, be ready to MOCVD equipment, the GaAs substrate one in the step 1 is inserted in the MOCVD operating room facing up, growth temperature is set to 500 ℃-800 ℃, successively the GaAs resilient coating that mixes of epitaxial growth N-shaped, the In that N-shaped mixes on the GaAs substrate x(Al yGa 1-y) 1-xAs graded bedding and the first knot In xGa 1-xThe As battery;
Step 3, with 180 ° of the GaAs substrate in MOCVD operating room upsets, growth temperature is 500 ℃-800 ℃, and the GaAs resilient coating of epitaxial growth N-shaped doping, the first tunnel junctions, the second knot GaAs battery, the second tunnel junctions, the 3rd are tied the GaAs cap layer of GaInP battery, N-shaped doping successively on the GaAs substrate;
Step 4, last packaging technology according to standard cell are prepared into the GaAs three-joint solar cell of double-face epitaxial growth.
The present invention can also adopt following technical measures:
The GaAs substrate is doping content 1 * 10 in the described step 1 17-1 * 10 18Cm -3, thickness is 600 microns N-shaped GaAs sheet; Growth temperature in described step 2 and the step 3 in the MOCVD operating room is 500 ℃, 600 ℃ or 800 ℃.
In the described step 2, the doping content of GaAs resilient coating is 1 * 10 17-1 * 10 18Cm -3, thickness is the 0.1-0.3 micron; In x(Al yGa 1-y) 1-xIn the As graded bedding, 0.03≤x≤0.3,0.5≤y≤0.7, doping content is 1 * 10 17-1 * 10 19Cm -3, thickness is 2-5 μ m; The first knot In xGa 1-xThe As battery comprises the In that p-type is mixed xGa 1-xThe In that As cap layer, p-type are mixed x(Al yGa 1-y) 1-xThe In that As back surface field layer, p-type are mixed xGa 1-xThe In that As base, N-shaped mix xGa 1-xThe In that As emitter region and N-shaped mix x(Al yGa 1-y) 1-xThe As Window layer; 0.3≤x≤0.5,0.5≤y≤0.7; Described In x(Al yGa 1-y) 1-xThe doping content 1 * 10 of As Window layer 17-1 * 10 19Cm -3, thickness 100-300nm; Described In xGa 1-xThe doping content 1 * 10 of As emitter region 17-1 * 10 19Cm -3, thickness 200-400nm; Described In xGa 1-xThe doping content 1 * 10 of As base 16-1 * 10 18Cm -3, thickness 1500-2000nm; Described In x(Al yGa 1-y) 1-xThe doping content 1 * 10 of As back surface field layer 17-1 * 10 19Cm -3, thickness 100-200nm; Described In xGa 1-xThe doping content 1 * 10 of As cap layer 18-1 * 10 19Cm -3, thickness 500-800nm; In the described step 3, the doping content of GaAs resilient coating is 1 * 10 17-1 * 10 18Cm -3, thickness is the 0.1-0.3 micron; The first tunnel junctions comprises the GaAs layer of N-shaped doping and the Al that p-type is mixed 0.4Ga 0.6The As layer; The doping content of described GaAs layer is 1 * 10 18-1 * 10 20Cm -3, thickness 10nm-100nm; Described Al 0.4Ga 0.6The doping content of As layer is 1 * 10 18-1 * 10 20Cm -3, thickness 10nm-100nm; The second knot GaAs battery comprises the Al that p-type is mixed xGa 1-xThe Al that the GaAs emitter region that the GaAs base that As back surface field layer, p-type are mixed, N-shaped mix, N-shaped mix xGa 1-xThe As Window layer; 0.3≤x≤0.5; Described Al xGa 1-xThe doping content of As back surface field layer is 1 * 10 17-1 * 10 19Cm -3, thickness 100-200nm; The doping content of described GaAs base is 1 * 10 16-1 * 10 18Cm -3, thickness 3000-4000nm; The doping content of described GaAs emitter region is 1 * 10 17-1 * 10 19Cm -3, thickness 50-200nm; Described Al xGa 1-xThe doping content of As Window layer is 1 * 10 17-1 * 10 19Cm -3, thickness is 30-100nm; The second tunnel junctions comprises the GaAs layer of N-shaped doping and the Al that p-type is mixed 0.4Ga 0.6The As layer; The doping content of described GaAs layer is 1 * 10 18-1 * 10 20Cm -3, thickness 10nm-100nm; Described Al 0.4Ga 0.6The doping content of As layer is 1 * 10 18-1 * 10 20Cm -3, thickness 10nm-100nm; The 3rd knot GaInP battery comprises AlGaInP back surface field layer, the GaInP base that p-type is mixed, the GaInP emitter region of N-shaped doping and the AlInP Window layer that N-shaped mixes that p-type is mixed; The doping content of described AlGaInP back surface field layer is 1 * 10 17-1 * 10 19Cm -3, thickness 100-200nm; The doping content of described GaInP base is 1 * 10 16-1 * 10 17Cm -3, thickness 1000-2000nm; The doping content of described GaInP emitter region is 1 * 10 17-1 * 10 19Cm -3, thickness is 50-200nm; The doping content of described AlInP Window layer is 1 * 10 17-1 * 10 19Cm -3, thickness 30-100nm; The doping content of GaAs cap layer is 1 * 10 18-1 * 10 19Cm -3, thickness is 100-1000nm.
The advantage that the present invention has and good effect:
The present invention is owing to adopted device preparation technology with GaInP/GaInAs/Ge three-joint solar cell compatibility, carry out the double-face epitaxial growth by upset thickness greater than 500 microns GaAs substrate, both realized that dislocation that the isolation lattice mismatch produces was on the second junction battery of being grown in the substrate reverse side and the impact of the 3rd junction battery, improved the cell photoelectric conversion efficiency, reach 41%(AM1.5D, 25 ℃, 1cm 2, 500 times of optically focused), and need not to adopt off-gauge III-V family solar cell processing procedure, guaranteed the stable of battery performance, simplify cell making process, reduced the battery cost of manufacture, improved the production efficiency of battery, be easy to realize large-scale production.
Description of drawings
Fig. 1 is the double-face epitaxial growth GaAs three-joint solar cell structural representation that the present invention prepares;
Among the figure: 1-GaAs cap layer; 2-the 3rd knot GaInP battery; 3-the second tunnel junctions; 4-the second knot GaAs battery; 5-the first tunnel junctions; The 6-resilient coating; The 7-GaAs substrate; The 8-resilient coating; 9-In x(Al yGa 1-y) 1-xThe As graded bedding; 10-the first knot In xGa 1-xThe As battery.
Embodiment
For further disclosing summary of the invention of the present invention, Characteristic, also be elaborated by reference to the accompanying drawings as follows especially exemplified by following instance:
The preparation method of double-face epitaxial growth GaAs three-joint solar cell is characterized in: at the GaAs resilient coating of GaAs substrate one side successively epitaxial growth N-shaped doping, the In that N-shaped mixes x(Al yGa 1-y) 1-xAs graded bedding and the first knot In xGa 1-xThe As battery; The GaAs cap layer that GaAs resilient coating, the first tunnel junctions, the second knot GaAs battery, the second tunnel junctions, the 3rd knot GaInP battery, the N-shaped that mixes at GaAs substrate another side successively epitaxial growth N-shaped mixes.
Embodiment
Consult accompanying drawing 1, the preparation method of double-face epitaxial growth GaAs three-joint solar cell of the present invention comprises following preparation process:
Step 1, to select doping content be 1 * 10 18Cm -3, 600 microns of thickness N-shaped Doped GaAs sheet as GaAs substrate 7;
Step 2, be ready to MOCVD equipment, the GaAs substrate one in the step 1 is inserted in the MOCVD operating room facing up, growth temperature is set to 600 ℃, successively the GaAs resilient coating 8 that mixes of epitaxial growth N-shaped, the In that N-shaped mixes on the GaAs substrate x(Al yGa 1-y) 1-xAs graded bedding 9 and the first knot In xGa 1-xAs battery 10;
The doping content of described GaAs resilient coating is 1 * 10 18Cm -3, thickness is 0.2 micron;
Described In x(Al yGa 1-y) 1-xIn the As graded bedding, 0.03≤x≤0.3,0.5≤y≤0.7, doping content is 1 * 10 19Cm -3, thickness is 3 μ m;
Described the first knot In xGa 1-xThe As battery comprises the In that p-type is mixed xGa 1-xThe In that As cap layer, p-type are mixed x(Al yGa 1-y) 1-xThe In that As back surface field layer, p-type are mixed xGa 1-xThe In that As base, N-shaped mix xGa 1-xThe In that As emitter region and N-shaped mix x(Al yGa 1-y) 1-xThe As Window layer; 0.3≤x≤0.5,0.5≤y≤0.7; Described In x(Al yGa 1-y) 1-xThe doping content of As Window layer-1 * 10 19Cm -3, thickness 100nm; Described In xGa 1-xThe doping content 1 * 10 of As emitter region 19Cm -3, thickness 200; Described In xGa 1-xThe doping content 1 * 10 of As base 18Cm -3, thickness 1500nm; Described In x(Al yGa 1-y) 1-xThe doping content 1 * 10 of As back surface field layer 19Cm -3, thickness 100nm; Described In xGa 1-xThe doping content 1 * 10 of As cap layer 19Cm -3, thickness 500nm;
Step 3, with 180 ° of the GaAs substrate in MOCVD operating room upsets, growth temperature is 600 ℃, and the GaAs resilient coating 6 of epitaxial growth N-shaped doping, the first tunnel junctions 5, the second knot GaAs battery 4, the second tunnel junctions 3, the 3rd are tied the GaAs cap layer 1 of GaInP battery 2, N-shaped doping successively on the GaAs substrate;
The doping content of described GaAs resilient coating is 1 * 10 18Cm -3, thickness is 0.1 micron;
Described the first tunnel junctions comprises the GaAs layer of N-shaped doping and the Al that p-type is mixed 0.4Ga 0.6The As layer; The doping content of described GaAs layer is 1 * 10 20Cm -3, thickness 10nm; Described Al 0.4Ga 0.6The doping content of As layer is 1 * 10 20Cm -3, thickness 10nm;
Described the second knot GaAs battery comprises the Al that p-type is mixed xGa 1-xThe Al that the GaAs emitter region that the GaAs base that As back surface field layer, p-type are mixed, N-shaped mix, N-shaped mix xGa 1-xThe As Window layer; 0.3≤x≤0.5; Described Al xGa 1-xThe doping content of As back surface field layer is 1 * 10 19Cm -3, thickness 100; The doping content of described GaAs base is 1 * 10 18Cm -3, thickness 3000nm; The doping content of described GaAs emitter region is 1 * 10 19Cm -3, thickness 100nm; Described Al xGa 1-xThe doping content of As Window layer is 1 * 10 19Cm -3, thickness is 30nm;
Described the second tunnel junctions comprises the GaAs layer of N-shaped doping and the Al that p-type is mixed 0.4Ga 0.6The As layer; The doping content of described GaAs layer is 1 * 10 20Cm -3, thickness 20nm; Described Al 0.4Ga 0.6The doping content of As layer is 1 * 10 20Cm -3, thickness 20nm;
Described the 3rd knot GaInP battery comprises AlGaInP back surface field layer, the GaInP base that p-type is mixed, the GaInP emitter region of N-shaped doping and the AlInP Window layer that N-shaped mixes that p-type is mixed; The doping content of described AlGaInP back surface field layer is 1 * 10 19Cm -3, thickness 100nm; The doping content of described GaInP base is 1 * 10 17Cm -3, thickness 1000nm; The doping content of described GaInP emitter region is 1 * 10 19Cm -3, thickness is 100nm; The doping content of described AlInP Window layer is 1 * 10 19Cm -3, thickness 50nm;
The doping content of described GaAs cap layer is 1 * 10 19Cm -3, thickness is 200nm.
Step 4, last packaging technology according to standard cell are prepared into as shown in Figure 1, the GaAs three-joint solar cell of the double-face epitaxial growth of the present invention's preparation.
Although the above is described the preferred embodiments of the present invention by reference to the accompanying drawings; but the present invention is not limited to above-mentioned specific embodiment; above-mentioned specific embodiment only is schematic; be not restrictive; those of ordinary skill in the art is under enlightenment of the present invention; not breaking away from the scope situation that aim of the present invention and claim protect, can also make a lot of forms.These all belong within protection scope of the present invention.

Claims (3)

1. the preparation method of double-face epitaxial growth GaAs three-joint solar cell is characterized in that: comprise following preparation process:
Step 1, to select thickness be that the GaAs sheet of 500-800 micron is as the GaAs substrate;
Step 2, be ready to MOCVD equipment, the GaAs substrate one in the step 1 is inserted in the MOCVD operating room facing up, growth temperature is set to 500 ℃-800 ℃, successively the GaAs resilient coating that mixes of epitaxial growth N-shaped, the In that N-shaped mixes on the GaAs substrate x(Al yGa 1-y) 1-xAs graded bedding and the first knot In xGa 1-xThe As battery;
Step 3, with 180 ° of the GaAs substrate in MOCVD operating room upsets, growth temperature is 500 ℃-800 ℃, and the GaAs resilient coating of epitaxial growth N-shaped doping, the first tunnel junctions, the second knot GaAs battery, the second tunnel junctions, the 3rd are tied the GaAs cap layer of GaInP battery, N-shaped doping successively on the GaAs substrate;
Step 4, last packaging technology according to standard cell are prepared into the GaAs three-joint solar cell of double-face epitaxial growth.
2. the preparation method of double-face epitaxial according to claim 1 growth GaAs three-joint solar cell, it is characterized in that: the GaAs substrate is doping content 1 * 10 in the step 1 17-1 * 10 18Cm -3, thickness is 600 microns N-shaped GaAs sheet; Growth temperature in described step 2 and the step 3 in the MOCVD operating room is 500 ℃, 600 ℃ or 800 ℃.
3. the preparation method of double-face epitaxial according to claim 1 and 2 growth GaAs three-joint solar cell is characterized in that:
In the described step 2, the doping content of GaAs resilient coating is 1 * 10 17-1 * 10 18Cm -3, thickness is the 0.1-0.3 micron; In x(Al yGa 1-y) 1-xIn the As graded bedding, 0.03≤x≤0.3,0.5≤y≤0.7, doping content is 1 * 10 17-1 * 10 19Cm -3, thickness is 2-5 μ m; The first knot In xGa 1-xThe As battery comprises the In that p-type is mixed xGa 1-xThe In that As cap layer, p-type are mixed x(Al yGa 1-y) 1-xThe In that As back surface field layer, p-type are mixed xGa 1-xThe In that As base, N-shaped mix xGa 1-xThe In that As emitter region and N-shaped mix x(Al yGa 1-y) 1-xThe As Window layer; 0.3≤x≤0.5,0.5≤y≤0.7; Described In x(Al yGa 1-y) 1-xThe doping content 1 * 10 of As Window layer 17-1 * 10 19Cm -3, thickness 100-300nm; Described In xGa 1-xThe doping content 1 * 10 of As emitter region 17-1 * 10 19Cm -3, thickness 200-400nm; Described In xGa 1-xThe doping content 1 * 10 of As base 16-1 * 10 18Cm -3, thickness 1500-2000nm; Described In x(Al yGa 1-y) 1-xThe doping content 1 * 10 of As back surface field layer 17-1 * 10 19Cm -3, thickness 100-200nm; Described In xGa 1-xThe doping content 1 * 10 of As cap layer 18-1 * 10 19Cm -3, thickness 500-800nm;
In the described step 3, the doping content of GaAs resilient coating is 1 * 10 17-1 * 10 18Cm -3, thickness is the 0.1-0.3 micron; The first tunnel junctions comprises the GaAs layer of N-shaped doping and the Al that p-type is mixed 0.4Ga 0.6The As layer; The doping content of described GaAs layer is 1 * 10 18-1 * 10 20Cm -3, thickness 10nm-100nm; Described Al 0.4Ga 0.6The doping content of As layer is 1 * 10 18-1 * 10 20Cm -3, thickness 10nm-100nm; The second knot GaAs battery comprises the Al that p-type is mixed xGa 1-xThe Al that the GaAs emitter region that the GaAs base that As back surface field layer, p-type are mixed, N-shaped mix, N-shaped mix xGa 1-xThe As Window layer; 0.3≤x≤0.5; Described Al xGa 1-xThe doping content of As back surface field layer is 1 * 10 17-1 * 10 19Cm -3, thickness 100-200nm; The doping content of described GaAs base is 1 * 10 16-1 * 10 18Cm -3, thickness 3000-4000nm; The doping content of described GaAs emitter region is 1 * 10 17-1 * 10 19Cm -3, thickness 50-200nm; Described Al xGa 1-xThe doping content of As Window layer is 1 * 10 17-1 * 10 19Cm -3, thickness is 30-100nm; The second tunnel junctions comprises the GaAs layer of N-shaped doping and the Al that p-type is mixed 0.4Ga 0.6The As layer; The doping content of described GaAs layer is 1 * 10 18-1 * 10 20Cm -3, thickness 10nm-100nm; Described Al 0.4Ga 0.6The doping content of As layer is 1 * 10 18-1 * 10 20Cm -3, thickness 10nm-100nm; The 3rd knot GaInP battery comprises AlGaInP back surface field layer, the GaInP base that p-type is mixed, the GaInP emitter region of N-shaped doping and the AlInP Window layer that N-shaped mixes that p-type is mixed; The doping content of described AlGaInP back surface field layer is 1 * 10 17-1 * 10 19Cm -3, thickness 100-200nm; The doping content of described GaInP base is 1 * 10 16-1 * 10 17Cm -3, thickness 1000-2000nm; The doping content of described GaInP emitter region is 1 * 10 17-1 * 10 19Cm -3, thickness is 50-200nm; The doping content of described AlInP Window layer is 1 * 10 17-1 * 10 19Cm -3, thickness 30-100nm; The doping content of GaAs cap layer is 1 * 10 18-1 * 10 19Cm -3, thickness is 100-1000nm.
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CN108172638A (en) * 2018-02-11 2018-06-15 扬州乾照光电有限公司 A kind of three-junction solar battery
CN112151635A (en) * 2019-06-27 2020-12-29 张家港恩达通讯科技有限公司 Three-junction solar cell and preparation method thereof
EP4213224A1 (en) * 2022-01-14 2023-07-19 SolAero Technologies Corp., a corporation of the state of Delaware Multijunction solar cells with shifted junction

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