CN202855787U - Three-junction solar cell positioned on double surfaces of GaAs substrate - Google Patents

Three-junction solar cell positioned on double surfaces of GaAs substrate Download PDF

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Publication number
CN202855787U
CN202855787U CN2012205130991U CN201220513099U CN202855787U CN 202855787 U CN202855787 U CN 202855787U CN 2012205130991 U CN2012205130991 U CN 2012205130991U CN 201220513099 U CN201220513099 U CN 201220513099U CN 202855787 U CN202855787 U CN 202855787U
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thickness
gaas
shaped
battery
knot
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王帅
高鹏
刘如彬
康培
孙强
穆杰
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Tianjin Lantian Solar Tech Co ltd
CETC 18 Research Institute
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Tianjin Lantian Solar Tech Co ltd
CETC 18 Research Institute
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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Abstract

The utility model relates to a three-junction solar cell positioned on the double surfaces of a GaAs substrate. The three-junction solar cell comprises the GaAs substrate, a first junction InxGa1-xAs cell, a second junction GaAs cell and a third junction GaInP cell and is characterized in that the first junction InxGa1-xAs cell is fabricated on one surface of the GaAs substrate, the second junction GaAs cell and the third junction GaInP cell are fabricated on the other surface of the GaAs substrate, and the GaAs substrate is an n-type GaAs sheet with a thickness of more than 500 micrometers. According to the utility model, since the three unijunction cells are fabricated on the double surfaces of the GaAs substrate with a thickness of more than 500 micrometers, influence of dislocation caused by isolated lattice mismatching is exerted on the second junction cell and the third junction cell growing on the back of the substrate, photoelectric conversion efficiency of the cell is improved, stability of cell performance is guaranteed, manufacturing process for the cell is simplified, manufacturing cost for the cell is reduced, production efficiency of the cell is enhanced, and scale production of the cell can be easily realized.

Description

Be positioned at the two-sided three-joint solar cell of GaAs substrate
Technical field
The utility model belongs to technical field of solar batteries, particularly relates to the two-sided three-joint solar cell of a kind of GaAs of being positioned at substrate.
Background technology
In the solar cell, the raising of photoelectric conversion efficiency is the target that people constantly pursue all the time.At present 41.6% the standard I nGaP/GaAs/Ge three-joint solar cell technology that reached of photoelectric conversion efficiency can not be satisfied with people's further demand.For the photoelectric conversion efficiency that makes solar cell obtains further to promote, people constantly carry on technical development on standard I nGaP/GaAs/Ge three-joint solar cell basis.Find after deliberation, the reverse epitaxial growth of III-V solar cell has become at present, and another improves the important technology of photoelectric conversion efficiency, the supporter that namely shifts by a quadratic-layer, battery at the bottom of the alternative Ge of battery is finished the making of reverse epitaxial growth III-V solar cell at the bottom of adopting the technology such as wafer bonding and substrate desquamation with the InGaAs of lattice mismatch.The microcell defective that this reverse growth technology produces lattice mismatch extends to the upper strata, avoided the dislocation of lattice mismatch generation on the impact of other junction batteries, guaranteed at first epitaxially grown Lattice Matching top battery and the perfect epitaxial growth of intermediate cell, thereby made the photoelectric conversion efficiency of solar cell obtain further to promote.But, because the supporter that reverse epitaxially grown solar battery technology not only needs a quadratic-layer to shift, and the wafer bonding that adopts and film-substrate lift-off technology all belong to the processing procedure of off-gauge III-V family solar cell, these off-gauge III-V family solar cell processing procedures can't be compatible with standard I nGaP/GaAs/Ge three-joint solar cell, cause battery performance unstable, and reduced the production efficiency of solar cell, increased the cost of manufacture of battery, aspect feasibility, be not easy to realize.
Summary of the invention
The utility model provides a kind of photoelectric conversion efficiency battery performance high, that be prepared into stable for solving the technical problem that exists in the known technology, technique is simple, cost of manufacture is low, production efficiency is high, and what be easy to realize large-scale production is positioned at the two-sided three-joint solar cell of GaAs substrate.
The utility model is positioned at the two-sided three-joint solar cell of GaAs substrate and comprises following technical scheme:
Be positioned at the two-sided three-joint solar cell of GaAs substrate, comprise GaAs substrate, the first knot In xGa 1-xAs battery, the second knot GaAs battery and the 3rd knot GaInP battery are characterized in: described the first knot In xGa 1-xThe As battery is formed on the one side of GaAs substrate, and described the second knot GaAs battery and the 3rd knot GaInP battery are formed on the another side of GaAs substrate; The GaAs substrate is the N-shaped GaAs sheet of thickness 500-800 micron.
The utility model can also adopt following technical measures:
Described from GaAs substrate to the first knot In xGa 1-xAlso being shaped with successively N-shaped GaAs resilient coating and the thickness that thickness is the 0.1-0.3 micron between the As battery is the N-shaped In of 2-5 μ m x(Al yGa 1-y) 1-xThe As graded bedding; It is described that also to be shaped with successively thickness between GaAs substrate to the second knot GaAs battery be 0.1-0.3 micron N-shaped GaAs resilient coating and the first tunnel junctions; Be shaped with the second tunnel junctions between the second knot GaAs battery to the three knot GaInP batteries; The another side of the 3rd knot GaInP battery is shaped with the N-shaped GaAs cap layer that thickness is 100-1000nm.
Described the first knot In xGa 1-xThe As battery is followed successively by the p-type In of thickness 500-800nm from bottom to top xGa 1-xThe p-type In of As cap layer, thickness 100-200nm x(Al yGa 1-y) 1-xThe p-type In of As back surface field layer, thickness 1500-2000nm xGa 1-xThe N-shaped In of As base, thickness 200-400nm xGa 1-xThe N-shaped In of As emitter region and thickness 100-300nm x(Al yGa 1-y) 1-xThe As Window layer; Described the second knot GaAs battery comprises the p-type Al of thickness 100-200nm from bottom to top successively xGa 1-xThe p-type GaAs base of As back surface field layer, thickness 3000-4000nm, the N-shaped GaAs emitter region of thickness 50-200nm and thickness are the N-shaped Al of 30-100nm xGa 1-xThe As Window layer; Described the 3rd knot GaInP battery comprises the p-type GaInP base of p-type AlGaInP back surface field layer, the thickness 1000-2000nm of thickness 100-200nm, N-shaped GaInP emitter region that thickness is 50-200nm and the N-shaped AlInP Window layer of thickness 30-100nm from bottom to top successively; Described the first tunnelling is become the N-shaped GaAs layer of thickness 10nm-100nm and the p-type Al of thickness 10nm-100nm 0.4Ga 0.6The As layer; Described the second tunnelling is become the N-shaped GaAs layer of thickness 10nm-100nm and the p-type Al of thickness 10nm-100nm 0.4Ga 0.6The As layer.
The advantage that the utlity model has and good effect:
The utility model is owing to adopted device with GaInP/GaInAs/Ge three-joint solar cell compatibility, by three single junction cell being formed on two-sided greater than 500 microns GaAs substrate of thickness, both realized that dislocation that the isolation lattice mismatch produces was on the second junction battery of being grown in the substrate reverse side and the impact of the 3rd junction battery, improved the cell photoelectric conversion efficiency, reach 41%(AM1.5D, 25 ℃, 1cm 2, 500 times of optically focused), and need not to adopt off-gauge III-V family solar cell processing procedure, guaranteed the stable of battery performance, simplify battery manufacturing process, reduced the battery cost of manufacture, improved the production efficiency of battery, be easy to realize large-scale production
Description of drawings
Fig. 1 is the double-face epitaxial growth GaAs three-joint solar cell structural representation of the utility model preparation;
Among the figure: 1-GaAs cap layer; 2-the 3rd knot GaInP battery; 3-the second tunnel junctions; 4-the second knot GaAs battery; 5-the first tunnel junctions; The 6-resilient coating; The 7-GaAs substrate; The 8-resilient coating; 9-In x(Al yGa 1-y) 1-xThe As graded bedding; 10-the first knot In xGa 1-xThe As battery.
Embodiment
For further disclosing summary of the invention of the present utility model, Characteristic, also be elaborated by reference to the accompanying drawings as follows especially exemplified by following instance:
Be positioned at the two-sided three-joint solar cell of GaAs substrate, comprise GaAs substrate, the first knot In xGa 1-xAs battery, the second knot GaAs battery and the 3rd knot GaInP battery.
Innovative point of the present utility model is: described the first knot In xGa 1-xThe As battery is formed on the one side of GaAs substrate, and described the second knot GaAs battery and the 3rd knot GaInP battery are formed on the another side of GaAs substrate; The GaAs substrate is the N-shaped GaAs sheet of thickness 500-800 micron.Described from GaAs substrate to the first knot In xGa 1-xAlso being shaped with successively N-shaped GaAs resilient coating and the thickness that thickness is the 0.1-0.3 micron between the As battery is the N-shaped In of 2-5 μ m x(Al yGa 1-y) 1-xThe As graded bedding; It is described that also to be shaped with successively thickness between GaAs substrate to the second knot GaAs battery be 0.1-0.3 micron N-shaped GaAs resilient coating and the first tunnel junctions; Be shaped with the second tunnel junctions between the second knot GaAs battery to the three knot GaInP batteries; The another side of the 3rd knot GaInP battery is shaped with the N-shaped GaAs cap layer that thickness is 100-1000nm.Described the first knot In xGa 1-xThe As battery is followed successively by the p-type In of thickness 500-800nm from bottom to top xGa 1-xThe p-type In of As cap layer, thickness 100-200nm x(Al yGa 1-y) 1-xThe p-type In of As back surface field layer, thickness 1500-2000nm xGa 1-xThe N-shaped In of As base, thickness 200-400nm xGa 1-xThe N-shaped In of As emitter region and thickness 100-300nm x(Al yGa 1-y) 1-xThe As Window layer; Described the second knot GaAs battery comprises the p-type Al of thickness 100-200nm from bottom to top successively xGa 1-xThe p-type GaAs base of As back surface field layer, thickness 3000-4000nm, the N-shaped GaAs emitter region of thickness 50-200nm and thickness are the N-shaped Al of 30-100nm xGa 1-xThe As Window layer; Described the 3rd knot GaInP battery comprises the p-type GaInP base of p-type AlGaInP back surface field layer, the thickness 1000-2000nm of thickness 100-200nm, N-shaped GaInP emitter region that thickness is 50-200nm and the N-shaped AlInP Window layer of thickness 30-100nm from bottom to top successively; Described the first tunnelling is become the N-shaped GaAs layer of thickness 10nm-100nm and the p-type Al of thickness 10nm-100nm 0.4Ga 0.6The As layer; Described the second tunnelling is become the N-shaped GaAs layer of thickness 10nm-100nm and the p-type Al of thickness 10nm-100nm 0.4Ga 0.6The As layer.
Manufacturing process of the present utility model
1, selecting doping content is 1 * 10 18Cm -3, 600 microns of thickness N-shaped Doped GaAs sheet as GaAs substrate 7;
2, be ready to MOCVD equipment, the GaAs substrate one in the step 1 is inserted in the MOCVD operating room facing up, growth temperature is set to 600 ℃, successively the GaAs resilient coating 8 that mixes of epitaxial growth N-shaped, the In that N-shaped mixes on the GaAs substrate x(Al yGa 1-y) 1-xAs graded bedding 9 and the first knot In xGa 1-xAs battery 10;
The doping content of described GaAs resilient coating is 1 * 10 18Cm -3, thickness is 0.2 micron;
Described In x(Al yGa 1-y) 1-xIn the As graded bedding, 0.03≤x≤0.3,0.5≤y≤0.7, doping content is 1 * 10 19Cm -3, thickness is 3 μ m;
Described the first knot In xGa 1-xThe As battery comprises the In that p-type is mixed xGa 1-xThe In that As cap layer, p-type are mixed x(Al yGa 1-y) 1-xThe In that As back surface field layer, p-type are mixed xGa 1-xThe In that As base, N-shaped mix xGa 1-xThe In that As emitter region and N-shaped mix x(Al yGa 1-y) 1-xThe As Window layer; 0.3≤x≤0.5,0.5≤y≤0.7; Described In x(Al yGa 1-y) 1-xThe doping content of As Window layer-1 * 10 19Cm -3, thickness 100nm; Described In xGa 1-xThe doping content 1 * 10 of As emitter region 19Cm -3, thickness 200; Described In xGa 1-xThe doping content 1 * 10 of As base 18Cm -3, thickness 1500nm; Described In x(Al yGa 1-y) 1-xThe doping content 1 * 10 of As back surface field layer 19Cm -3, thickness 100nm; Described In xGa 1-xThe doping content 1 * 10 of As cap layer 19Cm -3, thickness 500nm;
3, with 180 ° of the upsets of the GaAs substrate in the MOCVD operating room, growth temperature is 600 ℃, and the GaAs resilient coating 6 of epitaxial growth N-shaped doping, the first tunnel junctions 5, the second knot GaAs battery 4, the second tunnel junctions 3, the 3rd are tied the GaAs cap layer 1 of GaInP battery 2, N-shaped doping successively on the GaAs substrate;
The doping content of described GaAs resilient coating is 1 * 10 18Cm -3, thickness is 0.1 micron;
Described the first tunnel junctions comprises the GaAs layer of N-shaped doping and the Al that p-type is mixed 0.4Ga 0.6The As layer; The doping content of described GaAs layer is 1 * 10 20Cm -3, thickness 10nm; Described Al 0.4Ga 0.6The doping content of As layer is 1 * 10 20Cm -3, thickness 10nm;
Described the second knot GaAs battery comprises the Al that p-type is mixed xGa 1-xThe Al that the GaAs emitter region that the GaAs base that As back surface field layer, p-type are mixed, N-shaped mix, N-shaped mix xGa 1-xThe As Window layer; 0.3≤x≤0.5; Described Al xGa 1-xThe doping content of As back surface field layer is 1 * 10 19Cm -3, thickness 100; The doping content of described GaAs base is 1 * 10 18Cm -3, thickness 3000nm; The doping content of described GaAs emitter region is 1 * 10 19Cm -3, thickness 100nm; Described Al xGa 1-xThe doping content of As Window layer is 1 * 10 19Cm -3, thickness is 30nm;
Described the second tunnel junctions comprises the GaAs layer of N-shaped doping and the Al that p-type is mixed 0.4Ga 0.6The As layer; The doping content of described GaAs layer is 1 * 10 20Cm -3, thickness 20nm; Described Al 0.4Ga 0.6The doping content of As layer is 1 * 10 20Cm -3, thickness 20nm;
Described the 3rd knot GaInP battery comprises AlGaInP back surface field layer, the GaInP base that p-type is mixed, the GaInP emitter region of N-shaped doping and the AlInP Window layer that N-shaped mixes that p-type is mixed; The doping content of described AlGaInP back surface field layer is 1 * 10 19Cm -3, thickness 100nm; The doping content of described GaInP base is 1 * 10 17Cm -3, thickness 1000nm; The doping content of described GaInP emitter region is 1 * 10 19Cm -3, thickness is 100nm; The doping content of described AlInP Window layer is 1 * 10 19Cm -3, thickness 50nm;
The doping content of described GaAs cap layer is 1 * 10 19Cm -3, thickness is 200nm.
4, finish the as shown in Figure 1 GaAs three-joint solar cell of the utility model double-face epitaxial growth according to the packaging technology of standard cell at last.
Although the above is described preferred embodiment of the present utility model by reference to the accompanying drawings; but the utility model is not limited to above-mentioned embodiment; above-mentioned embodiment only is schematic; be not restrictive; those of ordinary skill in the art is under enlightenment of the present utility model; not breaking away from the scope situation that the utility model aim and claim protect, can also make a lot of forms.These all belong within the protection range of the present utility model.

Claims (3)

1. be positioned at the two-sided three-joint solar cell of GaAs substrate, comprise GaAs substrate, the first knot In xGa 1-xAs battery, the second knot GaAs battery and the 3rd knot GaInP battery is characterized in that: described the first knot In xGa 1-xThe As battery is formed on the one side of GaAs substrate, and described the second knot GaAs battery and the 3rd knot GaInP battery are formed on the another side of GaAs substrate; The GaAs substrate is the N-shaped GaAs sheet of thickness 500-800 micron.
2. the two-sided three-joint solar cell of GaAs substrate that is positioned at according to claim 1 is characterized in that: described from GaAs substrate to the first knot In xGa 1-xAlso being shaped with successively N-shaped GaAs resilient coating and the thickness that thickness is the 0.1-0.3 micron between the As battery is the N-shaped In of 2-5 μ m x(Al yGa 1-y) 1-xThe As graded bedding; It is described that also to be shaped with successively thickness between GaAs substrate to the second knot GaAs battery be 0.1-0.3 micron N-shaped GaAs resilient coating and the first tunnel junctions; Be shaped with the second tunnel junctions between the second knot GaAs battery to the three knot GaInP batteries; The another side of the 3rd knot GaInP battery is shaped with the N-shaped GaAs cap layer that thickness is 100-1000nm.
3. the two-sided three-joint solar cell of GaAs substrate that is positioned at according to claim 2 is characterized in that: described the first knot In xGa 1-xThe As battery is followed successively by the p-type In of thickness 500-800nm from bottom to top xGa 1-xThe p-type In of As cap layer, thickness 100-200nm x(Al yGa 1-y) 1-xThe p-type In of As back surface field layer, thickness 1500-2000nm xGa 1-xThe N-shaped In of As base, thickness 200-400nm xGa 1-xThe N-shaped In of As emitter region and thickness 100-300nm x(Al yGa 1-y) 1-xThe As Window layer; Described the second knot GaAs battery comprises the p-type Al of thickness 100-200nm from bottom to top successively xGa 1-xThe p-type GaAs base of As back surface field layer, thickness 3000-4000nm, the N-shaped GaAs emitter region of thickness 50-200nm and thickness are the N-shaped Al of 30-100nm xGa 1-xThe As Window layer; Described the 3rd knot GaInP battery comprises the p-type GaInP base of p-type AlGaInP back surface field layer, the thickness 1000-2000nm of thickness 100-200nm, N-shaped GaInP emitter region that thickness is 50-200nm and the N-shaped AlInP Window layer of thickness 30-100nm from bottom to top successively; Described the first tunnelling is become the N-shaped GaAs layer of thickness 10nm-100nm and the p-type Al of thickness 10nm-100nm 0.4Ga 0.6The As layer; Described the second tunnelling is become the N-shaped GaAs layer of thickness 10nm-100nm and the p-type Al of thickness 10nm-100nm 0.4Ga 0.6The As layer.
CN2012205130991U 2012-10-08 2012-10-08 Three-junction solar cell positioned on double surfaces of GaAs substrate Expired - Fee Related CN202855787U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016205722A1 (en) * 2015-06-17 2016-12-22 Stc.Unm Metal matrix composites for contacts on solar cells
US12074228B2 (en) 2015-06-17 2024-08-27 Unm Rainforest Innovations Metal-carbon-nanotube metal matrix composites for metal contacts on photovoltaic cells

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016205722A1 (en) * 2015-06-17 2016-12-22 Stc.Unm Metal matrix composites for contacts on solar cells
US11374133B2 (en) 2015-06-17 2022-06-28 Unm Rainforest Innovations Metal matrix composites for contacts on solar cells
US12074228B2 (en) 2015-06-17 2024-08-27 Unm Rainforest Innovations Metal-carbon-nanotube metal matrix composites for metal contacts on photovoltaic cells

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