CN103165720B - Formal dress triple-junction monolithic solar cell and preparation method thereof - Google Patents

Formal dress triple-junction monolithic solar cell and preparation method thereof Download PDF

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CN103165720B
CN103165720B CN201310093060.8A CN201310093060A CN103165720B CN 103165720 B CN103165720 B CN 103165720B CN 201310093060 A CN201310093060 A CN 201310093060A CN 103165720 B CN103165720 B CN 103165720B
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solar cell
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gaas substrate
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CN103165720A (en
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李奎龙
董建荣
孙玉润
曾徐路
赵勇明
于淑珍
赵春雨
杨辉
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Suzhou Institute of Nano Tech and Nano Bionics of CAS
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract

The invention provides a kind of formal dress triple-junction monolithic solar cell and preparation method thereof, realize the combination of multijunction solar cell rational band gap, reduce current mismatch simultaneously and don't improve battery cost of manufacture and difficulty.At the bottom of described battery GaAs substrate, the GaInP transition zone set gradually on gaas substrates, InGaAs, battery, the first tunnel junction, InGaAsP intermediate cell, the second tunnel junction, InAlAs push up battery and ohmic contact layer.The preparation method of described battery, comprises step: 1) provide a GaAs substrate; 2) grow battery, the first tunnel junction, InGaAsP intermediate cell, the second tunnel junction, InAlAs at the bottom of the GaInP transition zone of In component stepping, InGaAs on gaas substrates successively and push up battery and ohmic contact layer; 3) on described ohmic contact layer and GaAs substrate, prepare upper and lower electrode respectively, obtain target solar cell.

Description

Formal dress triple-junction monolithic solar cell and preparation method thereof
Technical field
The present invention relates to area of solar cell, be specifically related to a kind of InAlAs/InGaAsP/InGaAs formal dress triple-junction monolithic solar cell based on GaAs substrate and preparation method thereof, this three-junction solar battery can realize making full use of solar spectrum, has the theoretical conversion efficiencies higher than 51% under optically focused.
Background technology
In iii-v solar cell field, many knots system is usually adopted to realize utilizing the grading absorption of solar spectrum, to obtain higher conversion efficiency.The system that current research is more and technology is comparatively ripe is GaInP/GaAs/Ge and GaInP/GaAs/InGaAs (~ 1.0eV) three junction battery.The most high conversion efficiency that the former reaches at present under a sun is 32-33%.But it is that Ge battery covers wider spectrum that this system still exists a subject matter, maximum 2 times of reaching other two junction batteries of its short circuit current, due to the restriction by three junction battery series connection, the energy of the solar spectrum that Ge battery is corresponding is not by abundant conversion.And the lattice mismatch of GaInP/GaAs/InGaAs (~ 1.0eV) three junction battery owing to having about 2.1% between GaAs and InGaAs battery, often adopt the method for being inverted growth, then adopt the technology such as substrate desquamation, increase difficulty and the cost of growth and technique.
How to realize the combination of multijunction solar cell rational band gap, reduce current mismatch simultaneously and don't improve battery cost of manufacture and difficulty becomes the problem that current III-V II-VI group solar cell needs solution badly.
Summary of the invention
The object of the invention is, formal dress triple-junction monolithic solar cell and preparation method thereof is provided, realize the combination of multijunction solar cell rational band gap, reduce current mismatch simultaneously and don't improve battery cost of manufacture and difficulty.
To achieve these goals, the invention provides a kind of formal dress triple-junction monolithic solar cell, comprise battery at the bottom of GaAs substrate, the GaInP transition zone set gradually on gaas substrates, InGaAs, the first tunnel junction, InGaAsP intermediate cell, the second tunnel junction, InAlAs top battery and ohmic contact layer.
Further, described InAlAs to push up at the bottom of battery, InGaAsP intermediate cell and InGaAs lattice constant match between battery, and described formal dress triple-junction monolithic solar cell band gap is combined as 1.93eV, 1.39eV, 0.94eV.
Further, there is lattice mismatch between described formal dress triple-junction monolithic solar cell and described GaAs substrate, the two grows described GaInP transition zone by lattice mutation and realizes connecting.
Further, described GaInP transition zone selects the Ga of In component stepping 1-xin xp material is as gradual transition layer, and realize by the transition of battery at the bottom of GaAs substrate to InGaAs, the value of x is changed to 0.85 by 0.49.
Further, described GaInP transition zone selects the Ga of In component stepping 1-xin xp material is as gradual transition layer, and described gradual transition layer suppresses threading dislocation upwards to penetrate battery at the bottom of arrival InGaAs by multiple interface, and the value of x is changed to 0.85 by 0.49.
Further, described GaAs substrate adopts P type GaAs substrate, or adopts N-type GaAs substrate and realized by the conversion of N-type to P type by a tunnel junction.
To achieve these goals, the present invention also provides a kind of preparation method of formal dress triple-junction monolithic solar cell of the present invention, comprises step: 1) provide a GaAs substrate; 2) grow battery, the first tunnel junction, InGaAsP intermediate cell, the second tunnel junction, InAlAs at the bottom of the GaInP transition zone of In component stepping, InGaAs on gaas substrates successively and push up battery and ohmic contact layer; 3) on described ohmic contact layer and GaAs substrate, prepare upper and lower electrode respectively, obtain target solar cell.
Further, each structure sheaf in described formal dress triple-junction monolithic solar cell all adopts mocvd method to grow and is formed, and N-type foreign atom is wherein Si, Se, S or Te, and P type foreign atom is Zn, Mg or C.
Further, each structure sheaf in described formal dress triple-junction monolithic solar cell all adopts MBE method to grow and is formed, and N-type foreign atom is wherein Si, Se, S, Sn or Te, and P type foreign atom is Be, Mg or C.
Formal dress triple-junction monolithic solar cell provided by the invention and preparation method thereof, advantage is:
1. this solar cell band gap is combined as 1.93eV, 1.39eV, 0.94eV, effectively achieve the grading absorption to solar spectrum, the current mismatch of each sub-battery is little, reduces the heat-energy losses in photoelectric conversion process, and under 100 times of optically focused, its efficiency can reach more than 51%;
2. Lattice Matching between this solar cell each sub-battery, and adopt traditional formal dress method to grow, growth course is simple;
3. this solar cell manufacture craft is simple.
Accompanying drawing explanation
Figure 1 shows that the structural representation of the formal dress triple-junction monolithic solar cell that the embodiment of the invention provides;
Fig. 2 is the structural representation of the formal dress triple-junction monolithic solar cell manufactured goods shown in Fig. 1;
Figure 3 shows that preparation method's flow chart of steps of the formal dress triple-junction monolithic solar cell that the embodiment of the invention provides.
Embodiment
Below in conjunction with accompanying drawing, formal dress triple-junction monolithic solar cell provided by the invention and preparation method thereof is elaborated.
First the embodiment of formal dress triple-junction monolithic solar cell of the present invention is provided by reference to the accompanying drawings.
With reference to shown in accompanying drawing 1,2, wherein, Fig. 1 is the structural representation of the formal dress triple-junction monolithic solar cell that this embodiment provides, and Fig. 2 is the structural representation of the formal dress triple-junction monolithic solar cell manufactured goods shown in Fig. 1, next elaborates to the structure shown in accompanying drawing 1,2.
This embodiment provides a kind of formal dress triple-junction monolithic solar cell, comprising: at the bottom of GaAs substrate 31, InGaAs, battery 24, first tunnel junction 25, InGaAsP intermediate cell 26, second tunnel junction 27, InAlAs push up battery 28 and ohmic contact layer 23.Described InAlAs pushes up on battery 28 and described GaAs substrate 31 and is respectively equipped with electrode (as shown in Figure 2 electrode 29,30).
The band gap that three knot battery InAlAs push up battery 24 at the bottom of battery 28, InGaAsP intermediate cell 26 and InGaAs is combined as 1.93eV, 1.39eV, 0.94eV, and lattice constant match between each sub-battery, be 0.5807nm.The currents match of each sub-battery, reduces the heat-energy losses in photoelectric conversion process, improves battery efficiency.
As a kind of preferred implementation, described formal dress triple-junction monolithic solar cell adopts P type GaAs substrate 31.Be specially: first growing P-type GaAs resilient coating 01 on P type GaAs substrate 31, its secondary growth GaInP transition zone 02, then grow battery 24, InGaAsP intermediate cell 26 and InAlAs at the bottom of InGaAs successively and push up battery 28 3 knot battery, be cascaded by tunnel junctions between each sub-battery, finally grow one deck N-type InGaAs ohmic contact layer 23.
As another kind of preferred implementation, described formal dress triple-junction monolithic solar cell adopts N-type GaAs substrate 31.Be specially: on N-type GaAs substrate 31, first grow N-type GaAs resilient coating 01, regrowth one tunnel junction realizes by the conversion of N-type to P type, its secondary growth GaInP transition zone 02, then battery 24 at the bottom of InGaAs, InGaAsP intermediate cell 26, InAlAs top battery 28 3 knot battery is grown successively, be cascaded by tunnel junctions between each sub-battery, finally grow one deck N-type InGaAs ohmic contact layer 23.
There is lattice mismatch between each sub-battery of described formal dress triple-junction monolithic solar cell and GaAs substrate 31, there is the lattice mismatch of 2.72% in the present embodiment.Described GaInP transition zone 02 can be grown by lattice mutation between described formal dress triple-junction monolithic solar cell with described GaAs substrate 31 to realize being connected.Such as, can adopt and adopt lattice mutation to grow the Ga of In component stepping between battery 24 at the bottom of GaAs substrate 31 and InGaAs 1-xin xthe method of P (x=0.49 ~ 0.85) transition zone realizes the transition of lattice constant.Ga 1-xin xp content gradually variational transition zone can make lattice mismatch stress fully discharge.The Ga of In component stepping 1-xin xp gradual transition layer can suppress threading dislocation upwards to penetrate battery 24 at the bottom of arrival InGaAs by multiple interface.
Battery 24 at the bottom of described InGaAs comprises successively according to P type GaInP back surface field layer 03, the P type InGaAs base 04 arranged away from GaAs substrate 31 direction gradually, N-type InGaAs emitter region 05 and N-type GaInP Window layer 06.Preferably, in battery 24 at the bottom of described InGaAs, the component of In is about 38%, and its energy gap is about 0.94eV.
Described first tunnel junction 25 comprise successively according to gradually away from GaAs substrate 31 direction arrange N-type Al (Ga) InP or InAlAs barrier layer 07, the heavily doped layer 08 of N-type GaInP, P type InGaAs heavily doped layer 09, P type Al (Ga) InP or InAlAs barrier layer 10.Wherein, Al (Ga) InP represents AlInP or AlGaInP.
Described InGaAsP intermediate cell 26 comprises successively according to P type Al (Ga) InP or InAlAs back surface field layer 11, the P type InGaAsP base 12 arranged away from GaAs substrate 31 direction gradually, N-type InGaAsP emitter region 13, N-type In 0.37al 0.63as Window layer 14.Preferably, in described InGaAsP intermediate cell 26, the component of In and As is about 38%, 57% respectively, and its energy gap is about 1.39eV.
Described second tunnel junction 27 comprise successively according to gradually away from GaAs substrate 31 direction arrange N-type In 0.37al 0.63heavily doped layer 16, the P type InGaAs of As barrier layer 15, N-type GaInP heavily doped layer 17, P type In 0.37al 0.63as barrier layer 18.
Described InAlAs pushes up battery 28 and comprises successively according to gradually away from the P type In that GaAs substrate 31 direction is arranged 0.30al 0.70as back surface field layer 19, P type In 0.37al 0.63as base 20, N-type In 0.37al 0.63as emitter region 21, N-type In 0.3al 0.7as window layer by layer 22.Preferably, it is 37% that described InAlAs pushes up In component in battery 28, and its energy gap is about 1.93eV.
In this embodiment, push up on battery 28 at InAlAs and be also provided with InGaAs layer as ohmic contact layer 23, its doping type is N-type.
Described formal dress triple-junction monolithic solar cell is respectively equipped with electrode on described ohmic contact layer 23 and GaAs substrate 31.In this embodiment, ohmic contact layer 23 is provided with electrode 30, and electrode 30 is positioned at ohmic contact layer 23 upper surface; GaAs substrate 31 is provided with electrode 29, thus the solar cell needed for obtaining.
Lattice Matching between formal dress triple-junction monolithic solar cell provided by the invention each sub-battery, and adopt traditional formal dress method to grow, growth course and manufacture craft simple.And the band gap of described formal dress triple-junction monolithic solar cell is combined as ~ 1.93eV, ~ 1.39eV, ~ 0.94eV, effectively achieve the grading absorption to solar spectrum, the current mismatch of each sub-battery is little, reduce the heat-energy losses in photoelectric conversion process, under 100 times of optically focused, its efficiency can reach more than 51%.
Next the embodiment of formal dress triple-junction monolithic solar cell preparation method of the present invention is provided by reference to the accompanying drawings.
With reference to accompanying drawing 3, the flow chart of the formal dress triple-junction monolithic solar cell preparation method that this embodiment provides, next elaborates to the step shown in Fig. 3.
Step S301, provides a GaAs substrate.
Described formal dress triple-junction monolithic solar cell adopts P type GaAs substrate 31, first growing P-type GaAs resilient coating 01 on P type GaAs substrate 31, its secondary growth GaInP transition zone 02.As another kind of preferred implementation, described formal dress triple-junction monolithic solar cell can also adopt N-type GaAs substrate 31, first N-type GaAs substrate 31 grows N-type GaAs resilient coating 01, and regrowth one tunnel junction realizes by the conversion of N-type to P type, its secondary growth GaInP transition zone 02.
Step S302, grows battery at the bottom of the GaInP transition zone of In component stepping, InGaAs, the first tunnel junction, InGaAsP intermediate cell, the second tunnel junction, InAlAs top battery and ohmic contact layer on gaas substrates successively.
Grow GaInP transition zone on gaas substrates, described GaInP transition zone selects the Ga of In component stepping 1-xin xp material is as gradual transition layer, and realize by the transition of battery at the bottom of GaAs substrate to InGaAs, the value of x is changed to 0.85 by 0.49.Ga 1-xin xp content gradually variational transition zone can make lattice mismatch stress fully discharge.The Ga of In component stepping 1-xin xp gradual transition layer can suppress threading dislocation upwards to penetrate battery at the bottom of arrival InGaAs by multiple interface.
GaInP transition zone grows battery at the bottom of InGaAs, battery at the bottom of described InGaAs successively according to gradually away from GaAs substrate direction arrange P type GaInP back surface field layer, P type InGaAs base, N-type InGaAs emitter region and N-type GaInP Window layer.Preferably, in battery at the bottom of InGaAs, the component of In is about 38%, and its energy gap is about 0.94eV.
Battery at the bottom of InGaAs grows the first tunnel junction, described first tunnel junction comprise successively according to gradually away from GaAs substrate direction arrange N-type Al (Ga) InP or InAlAs barrier layer, the heavily doped layer of N-type GaInP, the heavily doped layer of P type InGaAs, P type Al (Ga) InP or InAlAs barrier layer.
In the first tunnel junctions growth InGaAsP intermediate cell, described InGaAsP intermediate cell comprise successively according to gradually away from GaAs substrate direction arrange P type Al (Ga) InP or InAlAs back surface field layer, P type InGaAsP base, N-type InGaAsP emitter region, N-type In 0.37al 0.63as Window layer.Preferably, in described InGaAsP intermediate cell, the component of In and As is about 38%, 57% respectively, and its energy gap is about 1.39eV.
InGaAsP intermediate cell grows the second tunnel junction, described second tunnel junction comprise successively according to gradually away from GaAs substrate direction arrange N-type In 0.37al 0.63as barrier layer, the heavily doped layer of N-type GaInP, the heavily doped layer of P type InGaAs, P type In 0.37al 0.63as barrier layer.
Push up battery at the second tunnel junctions growth InAlAs, described InAlAs pushes up battery successively according to gradually away from the P type In that GaAs substrate direction is arranged 0.30al 0.70as back surface field layer, P type In 0.37al 0.63as base, N-type In 0.37al 0.63as emitter region, N-type In 0.3al 0.7as Window layer.Preferably, it is 37% that described InAlAs pushes up In component in battery, and its energy gap is about 1.93eV.
Push up on battery at InAlAs and grow GaAs layer as ohmic contact layer, its doping type is N-type.
Step S303, prepares upper and lower electrode respectively on described ohmic contact layer and GaAs substrate, obtains target solar cell.
Top electrode (such as N electrode) is prepared on the surface of the ohmic contact layer of the InAlAs/InGaAsP/InGaAs formal dress triple-junction monolithic solar cell of growth on the battery of InAlAs top, prepare bottom electrode (such as P electrode) on gaas substrates, thus the solar cell needed for obtaining.
Above-mentioned growth course can adopt MOCVD (MetalOrganicChemicalVaporDeposition, metallo-organic compound chemical gaseous phase deposition) or MBE (MolecularBeamEpitaxy, molecular beam epitaxy) mode to grow.
Formed according to mocvd method growth, the N-type foreign atom in described formal dress triple-junction monolithic solar cell is Si, Se, S or Te, and P type foreign atom is Zn, Mg or C.
Formed according to the growth of MBE method, the N-type foreign atom in described formal dress triple-junction monolithic solar cell is Si, Se, S, Sn or Te, and P type foreign atom is Be, Mg or C.
Formal dress triple-junction monolithic solar cell preparation method provided by the invention adopts formal dress to grow, avoid the complicated technology be inverted growth battery structure and needed first to remove again with other support substrates material binds GaAs substrate, reduce the manufacture difficulty of battery, the Ga of In component stepping 1-xin xp content gradually variational transition zone can suppress threading dislocation upwards to penetrate battery at the bottom of arrival InGaAs by multiple interface, and lattice mismatch stress can be made fully to discharge.
Next 1,2 provide one embodiment of the present invention by reference to the accompanying drawings, be described further technical scheme provided by the invention, this preferred embodiment adopts MOCVD method to grow formal dress triple-junction monolithic solar cell of the present invention.
(1) the GaAs resilient coating 01 of growing P-type thickness 0.1 micron on P type GaAs substrate 31, the then GaInP transition zone 02 of growing P-type thickness 2.5 microns.
(2) growing P-type doping content about 1 × 10 successively 18cm -3, thickness 0.02 micron Ga 0.15in 0.85p is as back surface field layer 03, P type doping about 3 × 10 17cm -3, thickness 2.0 microns In 0.38ga 0.62as is as base 04, and N-type doping content is about 2 × 10 18cm -3, thickness 0.2 micron In 0.38ga 0.62as is as emitter region 05, and N-type is highly doped, thickness about 0.02 micron of Ga 0.15in 0.85p, as Window layer 06, forms battery 24 at the bottom of InGaAs.
(3) N-type doping 1 × 10 is grown successively 18cm -3, thickness 0.03 micron In 0.37al 0.63as or In 0.85al 0.15p as barrier layer 07, N-type doping content 1 × 10 19cm -3above, the Ga of thickness 0.015 micron 0.15in 0.85p heavily doped layer 08, P type doping content is greater than 1 × 10 19cm -3, thickness 0.015 micron In 0.38ga 0.62the heavily doped layer 09 of As, and P type doping content 1 × 10 18cm -3, thickness 0.03 micron In 0.37(Ga) Al 0.63as or In 0.85(Ga) Al 0.15p forms the first tunnel junction 25 as barrier layer 10.
(4) growing P-type doping 1 × 10 successively 18cm -3, thickness 0.02 micron In 0.37al 0.63as or In 0.85al 0.15p is as back surface field layer 11, P type doping about 3 × 10 17cm -3, thickness 2.0 microns InGaAsP as base 12, N-type doping be about 2 × 10 18cm -3, thickness 0.2 micron InGaAsP as emitter region 13, N-type is highly doped, thickness about 0.02 micron of In 0.37al 0.63as, as Window layer 14, forms battery 26 at the bottom of InGaAsP.
(5) N-type doping 1 × 10 is grown successively 18cm -3, thickness 0.03 micron In 0.37al 0.63as barrier layer 15, N-type doping content 1 × 10 19cm -3above, the Ga of thickness 0.015 micron 0.15in 0.85p heavily doped layer 16, P type doping content is greater than 1 × 10 19cm -3, thickness 0.015 micron In 0.38ga 0.62the heavily doped layer 17 of As, and P type doping 1 × 10 18cm -3, thickness 0.03 micron In 0.37al 0.63as forms the second tunnel junction 27 as barrier layer 18.
(6) growing P-type is doped to 1 × 10 successively 18cm -3, thickness 0.02 micron In 0.30al 0.70as is about 3 × 10 as the doping of back surface field layer 19, P type 17cm -3, thickness 2.0 microns In 0.37al 0.63as is as base 20, and N-type doping content is about 2 × 10 18cm -3, thickness 0.2 micron In 0.37al 0.63as is as emitter region 21, and N-type is highly doped, thickness about 0.02 micron of In 0.30al 0.70as, as Window layer 22, forms battery 28 at the bottom of InGaAs.
(7) then grow N-type doping content and be about 6 × 10 18cm -3, thickness 0.5 micron In 0.38ga 0.62as is as the ohmic contact layer 23 of solar cell.
The structure of the InAlAs/InGaAsP/InGaAs formal dress triple-junction monolithic solar cell obtained with the growth of MOCVD method as shown in Figure 1.
The technology for preparing electrode of solar cell: prepare P electrode 29 on P type GaAs substrate 31, prepare N electrode 30 on the surface of N-type ohmic contact layer 11, the solar cell needed for acquisition, its structure as shown in Figure 2.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.

Claims (8)

1. a formal dress triple-junction monolithic solar cell, comprise GaAs substrate, it is characterized in that, comprise the GaInP transition zone, battery, the first tunnel junction, InGaAsP intermediate cell, the second tunnel junction, the InAlAs at the bottom of InGaAs that set gradually on gaas substrates and push up battery and ohmic contact layer, described GaInP transition zone selects the Ga1-xInxP material of In component stepping as gradual transition layer, realize by the transition of battery at the bottom of GaAs substrate to InGaAs, the value of x is changed to 0.85 by 0.49.
2. formal dress triple-junction monolithic solar cell according to claim 1, it is characterized in that, described InAlAs to push up at the bottom of battery, InGaAsP intermediate cell and InGaAs lattice constant match between battery, the band gap that described InAlAs pushes up battery at the bottom of battery, InGaAsP intermediate cell and InGaAs is combined as 1.93eV, 1.39eV, 0.94eV.
3. formal dress triple-junction monolithic solar cell according to claim 1, it is characterized in that, there is lattice mismatch between each sub-battery of described formal dress triple-junction monolithic solar cell and described GaAs substrate, the two realizes connecting by lattice mutation growth GaInP transition zone.
4. the formal dress triple-junction monolithic solar cell according to claim 1 or 3, it is characterized in that, described GaInP transition zone selects the Ga1-xInxP material of In component stepping as gradual transition layer, described gradual transition layer suppresses threading dislocation upwards to penetrate battery at the bottom of arrival InGaAs by multiple interface, and the value of x is changed to 0.85 by 0.49.
5. formal dress triple-junction monolithic solar cell according to claim 1, is characterized in that, described GaAs substrate adopts P type GaAs substrate, or adopts N-type GaAs substrate and realized by the conversion of N-type to P type by a tunnel junction.
6. a preparation method for formal dress triple-junction monolithic solar cell according to claim 1, is characterized in that, comprise step:
1) a GaAs substrate is provided;
2) grow battery, the first tunnel junction, InGaAsP intermediate cell, the second tunnel junction, InAlAs at the bottom of the GaInP transition zone of In component stepping, InGaAs on gaas substrates successively and push up battery and ohmic contact layer, described GaInP transition zone selects the Ga1-xInxP material of In component stepping as gradual transition layer, realize by the transition of battery at the bottom of GaAs substrate to InGaAs, the value of x is changed to 0.85 by 0.49;
3) on described ohmic contact layer and GaAs substrate, prepare upper and lower electrode respectively, obtain target solar cell, described bottom electrode is positioned at the lower surface of GaAs substrate.
7. formal dress triple-junction monolithic solar cell preparation method according to claim 6, it is characterized in that, each structure sheaf in described formal dress triple-junction monolithic solar cell all adopts mocvd method to grow and is formed, and N-type foreign atom is wherein Si, Se, S or Te, and P type foreign atom is Zn, Mg or C.
8. formal dress triple-junction monolithic solar cell preparation method according to claim 6, it is characterized in that, each structure sheaf in described formal dress triple-junction monolithic solar cell all adopts MBE method to grow and is formed, N-type foreign atom is wherein Si, Se, S, Sn or Te, and P type foreign atom is Be, Mg or C.
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CN102651417A (en) * 2012-05-18 2012-08-29 中国科学院苏州纳米技术与纳米仿生研究所 Three-knot cascading solar battery and preparation method thereof

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