CN103165720A - Formal three-junction cascade solar battery and production method thereof - Google Patents

Formal three-junction cascade solar battery and production method thereof Download PDF

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CN103165720A
CN103165720A CN2013100930608A CN201310093060A CN103165720A CN 103165720 A CN103165720 A CN 103165720A CN 2013100930608 A CN2013100930608 A CN 2013100930608A CN 201310093060 A CN201310093060 A CN 201310093060A CN 103165720 A CN103165720 A CN 103165720A
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battery
gaas substrate
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formal dress
cascade solar
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CN103165720B (en
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李奎龙
董建荣
孙玉润
曾徐路
赵勇明
于淑珍
赵春雨
杨辉
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Suzhou Institute of Nano Tech and Nano Bionics of CAS
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    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract

The invention provides a formal three-junction cascade solar battery and a production method thereof. Reasonable band gap combination of a multi-junction solar cell is achieved, and the production cost and the production difficulty of the battery are not increased while the current mismatch is reduced. The battery comprises a GaAs substrate which is provided with a GaInP transition layer, an InGaAs bottom battery, a first tunnel junction, an InGaAsP middle battery, a second tunnel junction, an InAIAs top battery and an ohmic contact layer in order. The production method of the battery comprises: 1), providing a GaAs substrate; 2), developing an In-group step entering GaIn transition layer, the InGaAs bottom battery, the first tunnel junction, the InGaAsP middle battery, the second tunnel junction, the InAIAs top battery and the ohmic contact layer in otder on the GaAs substrate; 3), producing a top electrode and a bottom electrode on the ohmic contact layer and the GaAs substrate respectively to obtain the target solar battery.

Description

Formal dress three knot cascade solar cells and preparation method thereof
Technical field
The present invention relates to area of solar cell, be specifically related to a kind of InAlAs/InGaAsP/InGaAs formal dress three based on the GaAs substrate and tie cascade solar cells and preparation method thereof, this three-junction solar battery can realize that the taking full advantage of of solar spectrum had the theoretical transformation efficient higher than 51% under optically focused.
Background technology
In III-V II-VI group solar cell field, usually adopt the realization of many knots system to the grading absorption utilization of solar spectrum, to obtain higher conversion efficiency.Studying at present system more and that technology is comparatively ripe is GaInP/GaAs/Ge and GaInP/GaAs/InGaAs (~ 1.0 eV) three junction batteries.The high conversion efficiency that the former reaches under a sun at present is 32-33%.It is that the Ge battery covers wider spectrum that but still there is a subject matter in this system, its short circuit current maximum can reach 2 times of other two junction batteries, due to the restriction that is subjected to three junction battery series connection, the energy of the solar spectrum that the Ge battery is corresponding is not by abundant conversion using.And GaInP/GaAs/InGaAs (~ 1.0 eV) three junction batteries are owing to there being approximately 2.1% lattice mismatch between GaAs and InGaAs battery, often adopt the method for being inverted growth, then adopt the technology such as substrate desquamation, increased difficulty and the cost of growth and technique.
How to realize the combination of the rational band gap of multijunction solar cell, reduce current mismatch simultaneously and don't improve the battery cost of manufacture and difficulty becomes current III-V II-VI group solar cell and needs the problem of solution badly.
Summary of the invention
The objective of the invention is, formal dress three knot cascade solar cells and preparation method thereof are provided, realize the rational band gap combination of multijunction solar cell, reduce current mismatch simultaneously and don't improve battery cost of manufacture and difficulty.
To achieve these goals, the invention provides a kind of formal dress three knot cascade solar cells, comprise the GaAs substrate, battery, the first tunnel junction, InGaAsP intermediate cell, the second tunnel junction, InAlAs top battery and ohmic contact layer at the bottom of the GaInP transition zone that sets gradually on the GaAs substrate, InGaAs.
Further, lattice constant match between battery at the bottom of described InAlAs top battery, InGaAsP intermediate cell and InGaAs, described formal dress three knot cascade solar cell band gap are combined as 1.93 eV, 1.39 eV, 0.94 eV.
Further, there is lattice mismatch between described formal dress three knot cascade solar cells and described GaAs substrate, both realizes connecting by the described GaInP transition zone of lattice mutation growth.
Further, described GaInP transition zone is selected the Ga of In component stepping 1-xIn xThe P material is as the gradual transition layer, realizes that the value of x is changed to 0.85 by 0.49 by the transition of GaAs substrate battery at the bottom of the InGaAs.
Further, described GaInP transition zone is selected the Ga of In component stepping 1-xIn xThe P material is as the gradual transition layer, and described gradual transition layer suppresses threading dislocations by a plurality of interfaces and upwards penetrates and arrive battery at the bottom of InGaAs, and the value of x is changed to 0.85 by 0.49.
Further, described GaAs substrate adopts P type GaAs substrate, perhaps adopts N-type GaAs substrate and realizes by the conversion of N-type to the P type by a tunnel junction.
To achieve these goals, the present invention also provides a kind of preparation method of formal dress of the present invention three knot cascade solar cells, comprises step: 1) provide a GaAs substrate; 2) battery, the first tunnel junction, InGaAsP intermediate cell, the second tunnel junction, InAlAs top battery and ohmic contact layer at the bottom of the GaInP transition zone of In component stepping of growing successively on the GaAs substrate, InGaAs; 3) prepare respectively upper and lower electrode on described ohmic contact layer and GaAs substrate, obtain the target solar cell.
Further, each structure sheaf in described formal dress three knot cascade solar cells all adopts the mocvd method growth to form, and N-type foreign atom wherein is Si, Se, S or Te, and P type foreign atom is Zn, Mg or C.
Further, each structure sheaf in described formal dress three knot cascade solar cells all adopts the growth of MBE method to form, and N-type foreign atom wherein is Si, Se, S, Sn or Te, and P type foreign atom is Be, Mg or C.
Formal dress three knot cascade solar cells provided by the invention and preparation method thereof, advantage is:
1. this solar cell band gap is combined as 1.93 eV, 1.39 eV, 0.94 eV, effectively realized the grading absorption to solar spectrum, the current mismatch of each sub-battery is little, has reduced the heat-energy losses in the photoelectric conversion process, and its efficient can reach more than 51% under 100 times of optically focused;
2. Lattice Matching between each sub-battery of this solar cell, and adopt traditional formal dress method growth, growth course is simple;
3. this solar cell manufacture craft is simple.
Description of drawings
Figure 1 shows that the structural representation of the formal dress three knot cascade solar cells that the embodiment of the invention provides;
Fig. 2 is the structural representation that formal dress three shown in Figure 1 is tied the cascade solar cell manufactured goods;
Figure 3 shows that preparation method's flow chart of steps of the formal dress three knot cascade solar cells that the embodiment of the invention provides.
Embodiment
Below in conjunction with accompanying drawing, formal dress three knot cascade solar cells provided by the invention and preparation method thereof are elaborated.
At first by reference to the accompanying drawings provide the embodiment of formal dress three knot cascade solar cells of the present invention.
Shown in accompanying drawing 1,2, wherein, Fig. 1 is the structural representation of the formal dress three knot cascade solar cells that provide of this embodiment, and Fig. 2 is the structural representation of formal dress three knot cascade solar cell manufactured goods shown in Figure 1, next the structure shown in accompanying drawing 1,2 is elaborated.
This embodiment provides a kind of formal dress three knot cascade solar cells, comprising: battery 24, the first tunnel junction 25, InGaAsP intermediate cell 26, the second tunnel junction 27, InAlAs top battery 28 and ohmic contact layer 23 at the bottom of GaAs substrate 31, InGaAs.Be respectively equipped with electrode ( electrode 29,30 as shown in Fig. 2) on described InAlAs top battery 28 and described GaAs substrate 31.
At the bottom of three knot battery InAlAs top batteries 28, InGaAsP intermediate cell 26 and InGaAs, the band gap of battery 24 is combined as 1.93 eV, 1.39 eV, and 0.94 eV, and lattice constant match between each sub-battery are 0.5807 nm.The currents match of each sub-battery has reduced the heat-energy losses in the photoelectric conversion process, has improved battery efficiency.
As a kind of preferred implementation, described formal dress three knot cascade solar cells adopt P type GaAs substrate 31.Be specially: growing P-type GaAs resilient coating 01 at first on P type GaAs substrate 31, its secondary growth GaInP transition zone 02, then grow successively battery 24 at the bottom of InGaAs, InGaAsP intermediate cell 26 and InAlAs top battery 28 3 knot batteries, be cascaded by tunnel junctions between each sub-battery, one deck N-type of growing at last InGaAs ohmic contact layer 23.
As another kind of preferred implementation, described formal dress three knot cascade solar cells adopt N-type GaAs substrate 31.Be specially: the N-type GaAs resilient coating 01 of at first growing on N-type GaAs substrate 31, regrowth one tunnel junction is realized by the conversion of N-type to the P type, its secondary growth GaInP transition zone 02, then battery 24 at the bottom of InGaAs, InGaAsP intermediate cell 26, the InAlAs top battery 28 3 knot batteries of growing successively, be cascaded by tunnel junctions between each sub-battery, one deck N-type of growing at last InGaAs ohmic contact layer 23.
There is lattice mismatch between each sub-battery of described formal dress three knot cascade solar cells and GaAs substrate 31, has in the present embodiment 2.72% lattice mismatch.Can be connected by lattice mutation described GaInP transition zone 02 realization of growing between described formal dress three knot cascade solar cells and described GaAs substrate 31.For example, can adopt at the Ga that adopts the stepping of lattice mutation growth In component at the bottom of GaAs substrate 31 and InGaAs between battery 24 1-xIn xThe method of P (x=0.49 ~ 0.85) transition zone realizes the transition of lattice constant.Ga 1-xIn xP content gradually variational transition zone can make lattice mismatch stress fully discharge.The Ga of In component stepping 1-xIn xP gradual transition layer can suppress threading dislocations by a plurality of interfaces and upwards penetrate and arrive battery 24 at the bottom of InGaAs.
At the bottom of described InGaAs, battery 24 comprises successively the P type GaInP back surface field layer 03 that arranges away from GaAs substrate 31 directions according to gradually, P type InGaAs base 04, N-type InGaAs emitter region 05 and N-type GaInP Window layer 06.Preferably, at the bottom of described InGaAs in battery 24 component of In be about 38%, its energy gap is about 0.94 eV.
Described the first tunnel junction 25 comprises successively according to N-type Al (Ga) InP or the InAlAs barrier layer 07 that arrange away from GaAs substrate 31 directions gradually, the heavily doped layer 08 of N-type GaInP, the heavily doped layer 09 of P type InGaAs, P type Al (Ga) InP or InAlAs barrier layer 10.Wherein, Al (Ga) InP represents AlInP or AlGaInP.
Described InGaAsP intermediate cell 26 comprises successively P type Al (Ga) InP or the InAlAs back surface field layer 11 that arranges away from GaAs substrate 31 directions according to gradually, P type InGaAsP base 12, N-type InGaAsP emitter region 13, N-type In 0.37Al 0.63As Window layer 14.Preferably, in described InGaAsP intermediate cell 26, the component of In and As is about respectively 38%, 57%, and its energy gap is about 1.39 eV.
Described the second tunnel junction 27 comprises successively according to the N-type In that arranges away from GaAs substrate 31 directions gradually 0.37Al 0.63As barrier layer 15, the heavily doped layer 16 of N-type GaInP, the heavily doped layer 17 of P type InGaAs, P type In 0.37Al 0.63As barrier layer 18.
Described InAlAs top battery 28 comprises successively according to the P type In that arranges away from GaAs substrate 31 directions gradually 0.30Al 0.70As back surface field layer 19, P type In 0.37Al 0.63As base 20, N-type In 0.37Al 0.63As emitter region 21, N-type In 0.3Al 0.7As window layer by layer 22.Preferably, in the battery 28 of described InAlAs top, the In component is 37%, and its energy gap is about 1.93 eV.
In this embodiment, also be provided with the InGaAs layer as ohmic contact layer 23 on InAlAs top battery 28, its doping type is N-type.
Described formal dress three knot cascade solar cells are respectively equipped with electrode on described ohmic contact layer 23 and GaAs substrate 31.In this embodiment, ohmic contact layer 23 is provided with electrode 30, and electrode 30 is positioned at ohmic contact layer 23 upper surfaces; GaAs substrate 31 is provided with electrode 29, thereby obtains required solar cell.
Lattice Matching between formal dress three each sub-batteries of knot cascade solar cell provided by the invention, and adopt traditional formal dress method growth, growth course and manufacture craft are simple.And the band gap of described formal dress three knot cascade solar cells is combined as ~ 1.93 eV, ~ 1.39 eV, ~ 0.94eV, effectively realized the grading absorption to solar spectrum, the current mismatch of each sub-battery is little, reduced the heat-energy losses in the photoelectric conversion process, its efficient can reach more than 51% under 100 times of optically focused.
Next provide by reference to the accompanying drawings formal dress three knot cascade solar cell preparation methods' of the present invention embodiment.
With reference to accompanying drawing 3, next the formal dress three knot cascade solar cell preparation methods' that this embodiment provides flow chart elaborates to step shown in Figure 3.
Step S301 provides a GaAs substrate.
Described formal dress three knot cascade solar cells adopt P type GaAs substrates 31, growing P-type GaAs resilient coating 01 at first on P type GaAs substrate 31, its secondary growth GaInP transition zone 02.As another kind of preferred implementation, described formal dress three knot cascade solar cells can also adopt N-type GaAs substrate 31, at first the N-type GaAs resilient coating 01 of growing on N-type GaAs substrate 31, regrowth one tunnel junction is realized by the conversion of N-type to the P type, its secondary growth GaInP transition zone 02.
Step S302, battery, the first tunnel junction, InGaAsP intermediate cell, the second tunnel junction, InAlAs top battery and ohmic contact layer at the bottom of the GaInP transition zone of In component stepping of growing successively on the GaAs substrate, InGaAs.
At GaAs Grown GaInP transition zone, described GaInP transition zone is selected the Ga of In component stepping 1-xIn xThe P material is as the gradual transition layer, realizes that the value of x is changed to 0.85 by 0.49 by the transition of GaAs substrate battery at the bottom of the InGaAs.Ga 1-xIn xP content gradually variational transition zone can make lattice mismatch stress fully discharge.The Ga of In component stepping 1-xIn xP gradual transition layer can suppress threading dislocations by a plurality of interfaces and upwards penetrate and arrive battery at the bottom of InGaAs.
Battery at the bottom of growth InGaAs on the GaInP transition zone, at the bottom of described InGaAs, battery comprises successively the P type GaInP back surface field layer that arranges away from GaAs substrate direction according to gradually, P type InGaAs base, N-type InGaAs emitter region and N-type GaInP Window layer.Preferably, at the bottom of InGaAs in battery the component of In be about 38%, its energy gap is about 0.94 eV.
Growth the first tunnel junction on battery at the bottom of InGaAs, described the first tunnel junction comprises successively according to N-type Al (Ga) InP or the InAlAs barrier layer that arrange away from GaAs substrate direction gradually, the heavily doped layer of N-type GaInP, the heavily doped layer of P type InGaAs, P type Al (Ga) InP or InAlAs barrier layer.
Growth InGaAsP intermediate cell on the first tunnel junction, described InGaAsP intermediate cell comprises successively according to P type Al (Ga) InP or the InAlAs back surface field layer that arrange away from GaAs substrate direction gradually, P type InGaAsP base, N-type InGaAsP emitter region, N-type In 0.37Al 0.63The As Window layer.Preferably, in described InGaAsP intermediate cell, the component of In and As is about respectively 38%, 57%, and its energy gap is about 1.39 eV.
Growth the second tunnel junction on the InGaAsP intermediate cell, described the second tunnel junction comprises successively according to the N-type In that arranges away from GaAs substrate direction gradually 0.37Al 0.63The As barrier layer, the heavily doped layer of N-type GaInP, the heavily doped layer of P type InGaAs, P type In 0.37Al 0.63The As barrier layer.
Growth InAlAs top battery on the second tunnel junction, described InAlAs top battery comprises successively according to the P type In that arranges away from GaAs substrate direction gradually 0.30Al 0.70As back surface field layer, P type In 0.37Al 0.63The As base, N-type In 0.37Al 0.63The As emitter region, N-type In 0.3Al 0.7The As Window layer.Preferably, in the battery of described InAlAs top, the In component is 37%, and its energy gap is about 1.93 eV.
Growth GaAs layer is as ohmic contact layer on the battery of InAlAs top, and its doping type is N-type.
Step S303, the upper and lower electrode of preparation on described ohmic contact layer and GaAs substrate, obtain the target solar cell respectively.
The surface of the InAlAs/InGaAsP/InGaAs formal dress three knot cascade solar cells of the growth ohmic contact layer on the battery of InAlAs top is prepared top electrode (for example N electrode), prepare bottom electrode (for example P electrode) on the GaAs substrate, thereby obtain required solar cell.
Above-mentioned growth course can adopt MOCVD (Metal Organic Chemical Vapor Deposition, metallo-organic compound chemical gaseous phase deposition) or MBE (Molecular Beam Epitaxy, molecular beam epitaxy) mode to grow.
If adopt the mocvd method growth to form, the N-type foreign atom in described formal dress three knot cascade solar cells is Si, Se, S or Te, and P type foreign atom is Zn, Mg or C.
If adopt the growth of MBE method to form, the N-type foreign atom in described formal dress three knot cascade solar cells is Si, Se, S, Sn or Te, and P type foreign atom is Be, Mg or C.
Formal dress three knot cascade solar cell preparation methods provided by the invention adopt the formal dress growth, avoided being inverted the complicated technology that the growth battery structure needs first to remove with other support substrates material bonding the GaAs substrate again, reduced the manufacture difficulty of battery, the Ga of In component stepping 1-xIn xP content gradually variational transition zone can suppress threading dislocations by a plurality of interfaces and upwards penetrate and arrive battery at the bottom of InGaAs, and lattice mismatch stress is fully discharged.
Next 1,2 provide one embodiment of the present invention by reference to the accompanying drawings, technical scheme provided by the invention is described further, this preferred embodiment adopts MOCVD method growth formal dress three knot cascade solar cells of the present invention.
(1) the GaAs resilient coating 01 of 0.1 micron of growing P-type thickness on P type GaAs substrate 31, then the GaInP transition zone 02 of 2.5 microns of growing P-type thickness.
(2) growing P-type doping content approximately 1 * 10 successively 18cm -3, 0.02 micron of thickness Ga 0.15In 0.85P is as back surface field layer 03, P type doping approximately 3 * 10 17cm -3, 2.0 microns of thickness In 0.38Ga 0.62As is as base 04, and the N-type doping content is about 2 * 10 18cm -3, 0.2 micron of thickness In 0.38Ga 0.62As is as emitter region 05, and N-type is highly doped, the about 0.02 micron Ga of thickness 0.15In 0.85P is as Window layer 06, forms battery 24 at the bottom of InGaAs.
(3) the N-type doping 1 * 10 of growing successively 18cm -3, 0.03 micron of thickness In 0.37Al 0.63As or In 0.85Al 0.15P is as barrier layer 07, N-type doping content 1 * 10 19cm -3The Ga that above, thickness is 0.015 micron 0.15In 0.85The heavily doped layer 08 of P, P type doping content is greater than 1 * 10 19cm -3, 0.015 micron of thickness In 0.38Ga 0.62The heavily doped layer 09 of As, and P type doping content 1 * 10 18cm -3, 0.03 micron of thickness In 0.37(Ga) Al 0.63As or In 0.85(Ga) Al 0.15P forms the first tunnel junction 25 as barrier layer 10.
(4) growing P-type doping 1 * 10 successively 18cm -3, 0.02 micron of thickness In 0.37Al 0.63As or In 0.85Al 0.15P is as back surface field layer 11, P type doping approximately 3 * 10 17cm -3, 2.0 microns of thickness InGaAsP as base 12, the N-type doping is about 2 * 10 18cm -3, 0.2 micron of thickness InGaAsP as emitter region 13, N-type is highly doped, the about 0.02 micron In of thickness 0.37Al 0.63As is as Window layer 14, forms battery 26 at the bottom of InGaAsP.
(5) the N-type doping 1 * 10 of growing successively 18cm -3, 0.03 micron of thickness In 0.37Al 0.63As is as barrier layer 15, N-type doping content 1 * 10 19cm -3The Ga that above, thickness is 0.015 micron 0.15In 0.85The heavily doped layer 16 of P, P type doping content is greater than 1 * 10 19cm -3, 0.015 micron of thickness In 0.38Ga 0.62The heavily doped layer 17 of As, and P type doping 1 * 10 18cm -3, 0.03 micron of thickness In 0.37Al 0.63As forms the second tunnel junction 27 as barrier layer 18.
(6) growing P-type is doped to 1 * 10 successively 18cm -3, 0.02 micron of thickness In 0.30Al 0.70As is as back surface field layer 19, and the doping of P type is about 3 * 10 17cm -3, 2.0 microns of thickness In 0.37Al 0.63As is as base 20, and the N-type doping content is about 2 * 10 18cm -3, 0.2 micron of thickness In 0.37Al 0.63As is as emitter region 21, and N-type is highly doped, the about 0.02 micron In of thickness 0.30Al 0.70As is as Window layer 22, forms battery 28 at the bottom of InGaAs.
(7) the N-type doping content of then growing is about 6 * 10 18cm -3, 0.5 micron of thickness In 0.38Ga 0.62As is as the ohmic contact layer 23 of solar cell.
The structure of the InAlAs/InGaAsP/InGaAs formal dress three knot cascade solar cells that obtain with MOCVD method growth as shown in Figure 1.
The technology for preparing electrode of solar cell: preparation P electrode 29 on P type GaAs substrate 31, prepare N electrode 30 on the surface of N-type ohmic contact layer 11, obtain required solar cell, its structure is as shown in Figure 2.
The above is only the preferred embodiment of the present invention; should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the principle of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.

Claims (9)

1. a formal dress three is tied cascade solar cells, comprise the GaAs substrate, it is characterized in that, be included in battery at the bottom of the GaInP transition zone that sets gradually on the GaAs substrate, InGaAs, the first tunnel junction, InGaAsP intermediate cell, the second tunnel junction, InAlAs top battery and ohmic contact layer.
2. formal dress three according to claim 1 is tied cascade solar cells, it is characterized in that, lattice constant match between battery at the bottom of described InAlAs top battery, InGaAsP intermediate cell and InGaAs, described formal dress three knot cascade solar cell band gap are combined as 1.93 eV, 1.39 eV, 0.94 eV.
3. formal dress three knot cascade solar cells according to claim 1, is characterized in that, has lattice mismatch between described formal dress three knot cascade solar cells and described GaAs substrate, both realizes connecting by lattice mutation growth GaInP transition zone.
4. according to claim 1 or 3 described formal dress three knot cascade solar cells, is characterized in that, described GaInP transition zone is selected the Ga of In component stepping 1-xIn xThe P material is as the gradual transition layer, realizes that the value of x is changed to 0.85 by 0.49 by the transition of GaAs substrate battery at the bottom of the InGaAs.
5. according to claim 1 or 3 described formal dress three knot cascade solar cells, is characterized in that, described GaInP transition zone is selected the Ga of In component stepping 1-xIn xThe P material is as the gradual transition layer, and described gradual transition layer suppresses threading dislocations by a plurality of interfaces and upwards penetrates and arrive battery at the bottom of InGaAs, and the value of x is changed to 0.85 by 0.49.
6. formal dress three knot cascade solar cells according to claim 1, is characterized in that, described GaAs substrate adopts P type GaAs substrate, perhaps adopts N-type GaAs substrate and realizes by the conversion of N-type to the P type by a tunnel junction.
7. the preparation method of formal dress three knot cascade solar cells claimed in claim 1, is characterized in that, comprises step: 1) provide a GaAs substrate;
2) battery, the first tunnel junction, InGaAsP intermediate cell, the second tunnel junction, InAlAs top battery and ohmic contact layer at the bottom of the GaInP transition zone of In component stepping of growing successively on the GaAs substrate, InGaAs;
3) prepare respectively upper and lower electrode on described ohmic contact layer and GaAs substrate, obtain the target solar cell.
8. formal dress three according to claim 7 is tied the cascade solar cell preparation methods, it is characterized in that, each structure sheaf in described formal dress three knot cascade solar cells all adopts the mocvd method growth to form, and N-type foreign atom wherein is Si, Se, S or Te, and P type foreign atom is Zn, Mg or C.
9. formal dress three according to claim 7 is tied the cascade solar cell preparation methods, it is characterized in that, each structure sheaf in described formal dress three knot cascade solar cells all adopts the growth of MBE method to form, N-type foreign atom wherein is Si, Se, S, Sn or Te, and P type foreign atom is Be, Mg or C.
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CN113921642A (en) * 2021-10-21 2022-01-11 北京工业大学 Si-based double-sided triple-junction solar cell and preparation method thereof

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CN102651417A (en) * 2012-05-18 2012-08-29 中国科学院苏州纳米技术与纳米仿生研究所 Three-knot cascading solar battery and preparation method thereof

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CN113921642A (en) * 2021-10-21 2022-01-11 北京工业大学 Si-based double-sided triple-junction solar cell and preparation method thereof
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