CN104362215B - A kind of high-efficiency flexible thin-film solar cells manufacture method - Google Patents

A kind of high-efficiency flexible thin-film solar cells manufacture method Download PDF

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CN104362215B
CN104362215B CN201410477359.8A CN201410477359A CN104362215B CN 104362215 B CN104362215 B CN 104362215B CN 201410477359 A CN201410477359 A CN 201410477359A CN 104362215 B CN104362215 B CN 104362215B
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battery
layer
epitaxial substrate
ohmic contact
thinning
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CN104362215A (en
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张永
林志伟
姜伟
陈凯轩
蔡建九
吴洪清
李俊承
方天足
卓祥景
张银桥
黄尊祥
王向武
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Xiamen Changelight Co Ltd
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Xiamen Changelight Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
    • H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells
    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0725—Multiple junction or tandem solar cells
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic System, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The open a kind of high-efficiency flexible thin-film solar cells manufacture method of the present invention, it is provided that epitaxial substrate；At extension Grown epitaxial structure；Epitaxial structure grows ohmic contact layer, ohmic contact layer grows extension protective layer；Extension protective layer is bonded in rigid support template；Use epitaxial substrate reduction process that epitaxial substrate is thinning；It is deposited with back electrode in epitaxial substrate after thinning, and is bonded on fexible film substrate；Remove rigid support template and extension protective layer；Being deposited with front gate line electrode on ohmic contact layer, and by the ohmic contact layer of selective corrosion technique removal extinction part, be deposited with antireflective coating at corrosion area, sliver processes and get final product.The conversion efficiency of solar cell that the present invention manufactures is high, good reliability, and flexibility preferably alleviates weight.

Description

A kind of high-efficiency flexible thin-film solar cells manufacture method
Technical field
The present invention relates to technical field of solar batteries, refer in particular to a kind of high-efficiency flexible thin-film solar cells manufacture Method.
Background technology
III-V solar cell with GaInP/GaInAs/Ge three-joint solar cell as representative has photoelectricity The advantages such as conversion efficiency is high, strong, the good temp characteristic of Radiation hardness, at Spacecraft Electrical Power System and ground high power concentrator light Overhead utility is used widely, and replacement crystal silicon solar batteries the most completely becomes spacecraft main power source.
Owing to GaInP/GaInAs/Ge three-joint solar cell is based on thicker rigidity Ge substrate, usual rigidity Ge substrate Thickness >=140 μm, battery chip weight is relatively big and lacks flexibility, adds weight and the body of spacecraft solar panel Long-pending.And traditional CIGS, cadmium telluride or non-crystalline silicon flexible thin-film solar cell owing to conversion efficiency is low, poor stability etc. Reason fails to enter space application market.
Therefore, develop flexible thin film type III-V solaode and can meet spacecraft to sun electricity Pond high efficiency, the requirement of high reliability, can effectively reduce again the weight of spacecraft solar panel.Employing fexible film electricity Pond can crimp, and reduces the volume of solar panel simultaneously, the lift-launch ability of room for promotion aircraft and reduce launch cost； Additionally, this high-efficiency flexible thin-film solar cells also is able to meet the application requirement of near space vehicle, such as solar energy Unmanned aerial vehicle, unmanned airship etc.；This case thus produces.
Summary of the invention
It is an object of the invention to provide a kind of high-efficiency flexible thin-film solar cells manufacture method, the method manufactures Conversion efficiency of solar cell is high, good reliability, and flexibility preferably alleviates weight.
For reaching above-mentioned purpose, the solution of the present invention is:
A kind of high-efficiency flexible thin-film solar cells manufacture method, comprises the following steps:
Step one, it is provided that epitaxial substrate；
Step 2, at extension Grown epitaxial structure；
Step 3, grows ohmic contact layer on epitaxial structure, grows extension protective layer on ohmic contact layer；
Step 4, is bonded to extension protective layer in rigid support template；
Step 5, uses epitaxial substrate reduction process that epitaxial substrate is thinning；
Step 6, the epitaxial substrate after thinning is deposited with back electrode, and is bonded on fexible film substrate；
Step 7, removes rigid support template and extension protective layer；
Step 8, on ohmic contact layer be deposited with front gate line electrode, and by selective corrosion technique remove light absorption unit The ohmic contact layer divided, is deposited with antireflective coating at corrosion area, and sliver processes and get final product.
Further, thinning epitaxial substrate is 20-60 μm with the gross thickness of epitaxial structure and ohmic contact layer.
Further, epitaxial substrate reduction process is: first uses high concentration etchant solution, increases corrosion temperature, corrodes at height The back side of epitaxial substrate is etched under speed；After epitaxial substrate is thinning, uses dilution etchant solution, reduce etchant solution temperature, The back side of etching epitaxial substrate is continued to target thickness under low corrosion speed.
Further, epitaxial substrate reduction process is: remove epitaxial substrate redundance by the method for mechanical lapping until Target thickness.
Further, epitaxial substrate reduction process is: first use the thinning epitaxial substrate of chemical attack, is further continued for using mechanical grinding Wear away thin epitaxy substrate to target thickness；Or first use the thinning epitaxial substrate of mechanical lapping, be further continued for using chemical attack The thinning epitaxial substrate of method is thick to target.
A kind of high-efficiency flexible thin-film solar cells, thinning epitaxial substrate side arranges back electrode, and back electrode is bonded On fexible film substrate；Thinning epitaxial substrate opposite side arranges epitaxial structure, and epitaxial structure arranges ohmic contact layer, Europe Arranging front gate line electrode, and selective corrosion ohmic contact layer on nurse contact layer, corrosion area arranges antireflective coating.
Further, thinning epitaxial substrate is 20-60 μm with the gross thickness of epitaxial structure and ohmic contact layer.
Further, epitaxial structure is single-junction structure.
Further, unijunction epitaxial structure is to arrange battery BSF layer in thinning epitaxial substrate, depends on battery BSF layer Secondary arranging battery base, battery launch site and battery Window layer, battery Window layer is adjacent with ohmic contact layer.
Further, epitaxial structure is double junction structure.
Further, binode epitaxial structure is to arrange battery BSF layer in the end in thinning epitaxial substrate, at end battery BSF layer On set gradually battery base, the end, battery launch site, the end, end battery Window layer, tunnel junctions, top battery BSF layer, top battery base, Battery launch site, top and top battery Window layer, top battery Window layer is adjacent with ohmic contact layer.
Further, epitaxial structure is three junction structures.
Further, three knot epitaxial structures are to arrange battery BSF layer in the end in thinning epitaxial substrate, at end battery BSF layer On set gradually battery base, the end, battery launch site, the end, end battery Window layer, battery tunnel junctions of the middle end, middle battery BSF layer, in Battery base, middle battery launch site, middle battery Window layer, middle top battery tunnel junctions, top battery BSF layer, battery base, top, top electricity Launch site, pond, top battery Window layer, top battery Window layer is adjacent with ohmic contact layer.
Further, three knot epitaxial structures are for arrange battery launch site, the end in Ge epitaxial substrate, on battery launch site, the end Set gradually end battery Window layer, battery tunnel junctions of the middle end, middle battery BSF layer, middle battery base, middle battery launch site, middle electricity Pond Window layer, middle top battery tunnel junctions, top battery BSF layer, battery base, top, battery launch site, top, top battery Window layer, top electricity Pond Window layer is adjacent with ohmic contact layer.
Further, the material of epitaxial substrate is InP, GaAs or Ge.
After using such scheme, the present invention is by growing epitaxial structure by epitaxy technique, so in rigidity epitaxial substrate Afterwards by the thinning epitaxial substrate of reduction process, and it is bonded on fexible film substrate be formed.
Epitaxial structure, according to energy gap order from small to large, is sequentially overlapped in epitaxial substrate from the bottom to top.This Epitaxial structure in bright is epitaxially grown monocrystalline III-V material, and quality of materials is good, and conversion efficiency is high.Additionally, adopt with tradition Different by III-V race's thin-film solar cells of inverted structure growth, epitaxial structures succession of the present invention is formal dress extension Growth, it is to avoid the adverse effects such as the P/N type doping diffusion that upside-down mounting epitaxial growth brings, remains formal dress rigid substrate III-V race The feature of multijunction solar cell, has conversion efficiency height, quality than advantages such as power (W/kg) height, good reliabilitys.
The present invention also provides for above-mentioned a kind of high-efficiency soft hull cell manufacture method, by mechanical lapping, chemical attack or Person's mechanical lapping combines the thinning epitaxial substrate of method of chemical attack, is different from the making of traditional flexible thin-film solar cell Method, it is not necessary to peeling off sacrifice layer, processing technology the most easily realizes, easily makes large-area thin-film solar cells, improves The yield rate of thin-film solar cells.
Accompanying drawing explanation
Fig. 1 is the embodiment of the present invention one epitaxial growth structure schematic diagram；
Fig. 2 be the embodiment of the present invention one thinning after epitaxial substrate structural representation；
Fig. 3 is the embodiment of the present invention one thin-film solar cells chip structure schematic diagram；
Fig. 4 is the embodiment of the present invention two epitaxial growth structure schematic diagram；
Fig. 5 be the embodiment of the present invention two thin after epitaxial substrate subtract structural representation；
Fig. 6 is the embodiment of the present invention two thin-film solar cells chip structure schematic diagram.
Label declaration
Epitaxial substrate 1 epitaxial layer 2
Battery BSF layer 21 battery base 22
Battery launch site 23 battery Window layer 24
End battery launch site, battery base 25, the end 26
End battery tunnel junctions 28 in end battery Window layer 27
Battery base 210 in middle battery BSF layer 29
Battery Window layer 212 in middle battery launch site 211
Middle top battery tunnel junctions 213 pushes up battery BSF layer 214
Battery base 215, top pushes up battery launch site 216
Top battery Window layer 217 ohmic contact layer 3
Extension protective layer 4 rigid support template 5
Back electrode 6 fexible film substrate 7
Front gate line electrode 8 antireflective coating 9.
Detailed description of the invention
Below in conjunction with drawings and the specific embodiments, the present invention is described in detail.
Embodiment one
As it is shown in figure 1, the unijunction solar cell epitaxial structure that the present invention discloses, outside epitaxial substrate 1 grows successively Prolonging layer 2, ohmic contact layer 3, extension protective layer 4, in the present embodiment, epitaxial layer 2 is to grow the battery BSF(back of the body in epitaxial substrate 1 Electric field) layer 21, battery BSF layer 21 grows battery base 22, battery launch site 23 and battery Window layer 24, battery window successively Mouth layer 24 is adjacent with ohmic contact layer 3.
During epitaxial growth, epitaxial substrate 1 uses GaAs substrate, and the thickness of epitaxial substrate 1 is 350 μm.
Battery BSF layer 21 material is AlGaAs, and thickness is 50nm.Battery base 22 and battery launch site 23 material use GaAs III-V compounds of group, battery base 22 thickness is 3 μm, and the thickness of battery launch site 23 is 500nm.Battery Window layer 24 Material is GaInP III-V compounds of group, and thickness is 50nm.
Ohmic contact layer 3 material is GaAs III-V compounds of group, and thickness is 500nm.Extension protective layer 4 material is AlGaInP III-V compounds of group, thickness is 600nm.
The connection of described extension protective layer 4 pastes in rigid support template 5, and rigid support template 5 is silicon substrate.By wet The method of method corrosion removes the part that epitaxial substrate 1 is unnecessary.Specifically, first use the etchant solution H of high corrosion rate2SO4: H2O2: the volume ratio of HF is 3:2:2, H2SO4、H2O2, HF be industry universal, and temperature increases to 70 DEG C of corrosive liquid temperature, etching The back side of epitaxial substrate 1；After 5 minutes, change to the etchant solution H of low corrosion speed2SO4: H2O2: the volume ratio of HF is 1:2:2, and temperature is adjusted to 25 DEG C of corrosive liquid temperature.After 10 minutes；Epitaxial layer 2, thinning after epitaxial substrate 1 and ohm The gross thickness of contact layer 3 is 40 μm, as shown in Figure 2.
Thinning epitaxial substrate 1 is deposited with back electrode 6, and is bonded on the fexible film substrate 5 with electric conductivity.Go Except rigid support template 5 and AlGaInP extension protective layer 4 that thickness is 600nm.Ohmic contact layer 3 is deposited with front gate line Electrode 8, and the ohmic contact layer 3 of extinction part is removed by selective corrosion technique, evaporation antireflective coating 9 is at solaode Front.Final sliver processes, and i.e. obtains described flexible thin-film solar cell by above processing technology, such as Fig. 3 institute Show.
Embodiment two
As shown in Figure 4, the solaode epitaxial structure that the present invention discloses, its epitaxial substrate 1 material is Ge, serves as a contrast in extension Grown epitaxial layer 2, ohmic contact layer 3, extension protective layer 4 successively, in the present embodiment, epitaxial layer 2 is in epitaxial substrate 1 at the end 1 Battery base 25 at the bottom of upper growth, on battery base, the end 25, grow battery launch site, the end 26, end battery Window layer 27, the middle end successively Battery tunnel junctions 28, middle battery BSF layer 29, middle battery base 210, middle battery launch site 211, middle battery Window layer 212, Zhong Ding Battery tunnel junctions 213, top battery BSF layer 214, battery base 215, top, battery launch site 216, top, top battery Window layer 217, top Battery Window layer 217 is adjacent with ohmic contact layer 3.
The material of battery base, the end 25 and battery launch site, the end 26 is growth substrates Ge, and battery launch site, the end 26 is by diffusion Group V source is formed, and thickness is 500nm；End battery Window layer 27 material is GaInP III-V compounds of group, end battery Window layer 27 Thickness be 20nm；Tunnel junctions 28 material of the middle end is that two-layer opposite polarity GaAs/GaAs material is formed by stacking, tunnel junctions of the middle end The gross thickness of 28 is 50nm；Middle battery BSF layer 29 material is AlGaAs, and the thickness of middle battery BSF layer 29 is 50nm；Middle battery base District 210 and middle battery launch site 211 material use GaInAs III-V compounds of group mated with Ge substrate lattice, and In component is 1%, middle battery base 210 thickness is 3 μm, and the thickness of middle battery launch site 211 is 100nm；Middle battery Window layer 212 material is AlInP III-V compounds of group, middle battery Window layer 212 thickness is 100nm；Middle top battery tunnel junctions 213 material is GaInP/ AlGaAs, middle top battery tunnel junctions 213 thickness is 50nm；Top battery BSF layer 214 material is AlGaInP, pushes up battery BSF layer 214 Thickness is 100nm；Battery base, top 215 and battery launch site 216, top material use GaInP III-V compounds of group, push up battery Base 215 thickness is 600nm, and battery launch site 216, top thickness is 100nm；Top battery Window layer 217 material be AlInP III- V compounds of group, top battery Window layer 217 thickness is 50nm.
Ohmic contact layer 3 material is GaAs III-V compounds of group, and thickness is 500nm.Extension protective layer 4 material is AlGaInP III-V compounds of group, thickness is 600nm.
Extension protective layer 4 connection pastes rigid support template 5, and rigid support template 5 is on silicon substrate.Rotten by wet method The method of erosion removes the part that epitaxial substrate 1 is unnecessary.Specifically, first use the etchant solution NaOH:H of high corrosion rate2O2: H2O Volume ratio be 3:6:1, NaOH, H2O2、H2O is industry universal, and temperature increases to 60 DEG C of corrosive liquid temperature, etching extension lining The back side at the end 1.After 20 minutes, change to the etchant solution NaOH:H of low corrosion speed2O2: H2The volume ratio of O is 1:2:1, And temperature is adjusted to 25 DEG C of corrosive liquid temperature, after 15 minutes, epitaxial layer 2, thinning after epitaxial substrate 1 and ohmic contact layer The gross thickness of 3 is 40 μm, as shown in Figure 5.
Thinning epitaxial substrate 1 is deposited with back electrode 6, and is bonded on the fexible film substrate 7 with electric conductivity.Go Except rigid support template 5 and AlGaInP extension protective layer 4 that thickness is 600nm.Ohmic contact layer 3 is deposited with front gate line Electrode 8, and the ohmic contact layer 3 of extinction part is removed by selective corrosion technique, evaporation antireflective coating 9 is at solaode Front, final sliver process i.e. obtain described flexible thin-film solar cell, as shown in Figure 6.
The foregoing is only presently preferred embodiments of the present invention, not the restriction to this case design, all designs according to this case are closed The equivalent variations that key is done, each falls within the protection domain of this case.

Claims (9)

1. a high-efficiency flexible thin-film solar cells manufacture method, it is characterised in that comprise the following steps:
Step one, it is provided that epitaxial substrate；
Step 2, at extension Grown epitaxial structure；
Step 3, grows ohmic contact layer on epitaxial structure, grows extension protective layer on ohmic contact layer；
Step 4, is bonded to extension protective layer in rigid support template；
Step 5, uses epitaxial substrate reduction process that epitaxial substrate is thinning；
Step 6, the epitaxial substrate after thinning is deposited with back electrode, and is bonded on fexible film substrate；
Step 7, removes rigid support template and extension protective layer；
Step 8, on ohmic contact layer, it is deposited with front gate line electrode, and removes extinction part by selective corrosion technique Ohmic contact layer, is deposited with antireflective coating at corrosion area, and sliver processes and get final product.
2. a kind of high-efficiency flexible thin-film solar cells manufacture method as claimed in claim 1, it is characterised in that thinning Epitaxial substrate is 20-60 μm with the gross thickness of epitaxial structure and ohmic contact layer.
3. a kind of high-efficiency flexible thin-film solar cells manufacture method as claimed in claim 1, it is characterised in that extension serves as a contrast End reduction process is: remove epitaxial substrate redundance by the method for mechanical lapping until target thickness.
4. a kind of high-efficiency flexible thin-film solar cells manufacture method as claimed in claim 1, it is characterised in that extension serves as a contrast End reduction process is: first use the thinning epitaxial substrate of chemical attack, is further continued for using the thinning epitaxial substrate of mechanical lapping to target Thickness；Or first use the thinning epitaxial substrate of mechanical lapping, be further continued for using the thinning epitaxial substrate of method of chemical attack to mesh Mark thickness.
5. a kind of high-efficiency flexible thin-film solar cells manufacture method as claimed in claim 1, it is characterised in that epitaxy junction Structure is single-junction structure.
6. a kind of high-efficiency flexible thin-film solar cells manufacture method as claimed in claim 5, it is characterised in that outside unijunction Prolonging structure is to arrange battery BSF layer in thinning epitaxial substrate, sets gradually battery base, battery is sent out on battery BSF layer Penetrating district and battery Window layer, battery Window layer is adjacent with ohmic contact layer.
7. a kind of high-efficiency flexible thin-film solar cells manufacture method as claimed in claim 1, it is characterised in that epitaxy junction Structure is double junction structure.
8. a kind of high-efficiency flexible thin-film solar cells manufacture method as claimed in claim 7, it is characterised in that outside binode Prolonging structure is to arrange battery BSF layer in the end in thinning epitaxial substrate, battery BSF layer in the end sets gradually battery base, the end, Battery launch site, the end, end battery Window layer, tunnel junctions, top battery BSF layer, battery base, top, battery launch site, top and top battery Window layer, top battery Window layer is adjacent with ohmic contact layer.
9. a kind of high-efficiency flexible thin-film solar cells manufacture method as claimed in claim 1, it is characterised in that epitaxy junction Structure is three junction structures；Three knot epitaxial structures are to arrange battery BSF layer in the end in thinning epitaxial substrate, on end battery BSF layer Set gradually battery base, the end, battery launch site, the end, end battery Window layer, battery tunnel junctions of the middle end, middle battery BSF layer, middle electricity Base, pond, middle battery launch site, middle battery Window layer, middle top battery tunnel junctions, top battery BSF layer, battery base, top, top battery Launch site, top battery Window layer, top battery Window layer is adjacent with ohmic contact layer.
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CN101764174A (en) * 2008-12-25 2010-06-30 上海太阳能工程技术研究中心有限公司 Method for manufacturing light-focusing multi-junction gallium arsenide solar cell
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CN101764174A (en) * 2008-12-25 2010-06-30 上海太阳能工程技术研究中心有限公司 Method for manufacturing light-focusing multi-junction gallium arsenide solar cell
CN103208561A (en) * 2013-03-22 2013-07-17 上海中科高等研究院 Flexible thin-film solar cell and preparation method for solar cell

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