CN203481250U

CN203481250U - Flexible silicon-based gallium arsenide cell

Info

Publication number: CN203481250U
Application number: CN201320523877.XU
Authority: CN
Inventors: 刘文峰; 成文; 姬常晓
Original assignee: Hunan Red Sun Photoelectricity Science and Technology Co Ltd
Current assignee: Hunan Red Sun Photoelectricity Science and Technology Co Ltd
Priority date: 2013-08-27
Filing date: 2013-08-27
Publication date: 2014-03-12
Anticipated expiration: 2023-08-27

Abstract

The utility model belongs to the field of thin film solar cells, and relates to a flexible silicon-based gallium arsenide cell. The silicon-based gallium arsenide cell includes a substrate layer (1); and a Ge-Si buffering layer (2), a Ge cell layer (3), a tunnel junction A layer (4), a GaAs cell layer (5), a tunnel junction B layer (6), a GaInP cell layer (7), a window layer (8), an ohmic contact layer (9), and a reflection reducing film layer (10) which are disposed on the substrate layer (1) in sequence, wherein a front surface electrode (11) is disposed on the reflection reducing film layer (10), a rear surface electrode (12) is disposed at a lower surface of the substrate layer (1); the substrate layer (1) is a flexible silicon substrate layer with a thickness less than or equal to 48 micrometers; the total thickness of the flexible silicon-based gallium arsenide cell is less than or equal to 50 micrometers, and the area of a single cell is more than or equal to 80 cm2. In the flexible silicon-based gallium arsenide cell, flexible ultra-thin silicon is employed as a final substrate, thus extra large specific power (2000 W/Kg) is obtained, and emission cost of a space power source is greatly reduced.

Description

The silica-based GaAs battery of a kind of flexibility

Technical field

The utility model belongs to hull cell field, and a kind of flexible silica-based gallium arsenide film battery of preparing is provided.

Background technology

GaAs battery has that good stability, Radiation hardness are strong, the most high feature of photoelectric conversion efficiency, is a kind of Space power sources product of tool potential quality.At present, the western developed countries such as America and Japan Europe are competitively developed efficiently, the GaAs hull cell of lightweight, meet the needs of space flight military field separately and Future Outer Space power plant construction; Flexible efficient GaAs battery also can meet the special applications on ground simultaneously.GaAs is a kind of direct gap semiconductor material, can make multijunction cell, effectively improves photoelectric conversion efficiency.

Traditional GaAs/Ge battery, adopts the rare of the elements such as gallium, germanium due to substrate, epitaxial device and complex process, and not only manufacturing cost is high to make efficient GaAs battery, and quality is large, is difficult to realize large-scale application, especially aerospace industry.And Si base GaAs battery, because element silicon reserves in the earth's crust are very abundant, refinement difficulty is less, production cost is lower, the efficient GaAs battery of many knots that can be used for developing low-cost, light, thin and flexible substrate simultaneously can meet the extensive energy supply needs of Future Satellite, space station and space (moon) construction of base.Therefore, exploitation efficiently, flexible many knot GaAs hull cells are following aerospace inevitable choices cheaply.

Utility model content

The purpose of this utility model is: a kind of flexible silica-based gallium arsenide film battery of preparing is provided, and this battery gross thickness is about 50 microns, flexible, can be curling, and monolithic area can be greater than 80cm ², specific power is greater than the high-quality battery of 2000W/Kg.Meanwhile, the monocrystalline silicon of usining substitutes monocrystalline germanium, monocrystalline GaAs substrate, can greatly reduce the cost of multi-junction gallium arsenide battery.

For achieving the above object, the technical solution of the utility model is:

The silica-based GaAs battery of a kind of flexibility, comprise substrate layer, on substrate layer (1), there are successively Ge-Si resilient coating, Ge battery layers, tunnel junction A layer, GaAs battery layers, tunnel junction B layer, GaInP battery layers, Window layer, ohmic contact layer and antireflection film layer, and antireflection film layer is provided with front electrode, substrate layer lower surface is provided with backplate; Described substrate layer is the flexible silicon substrate layer of thickness≤48 micron; Gross thickness≤50 micron of the silica-based GaAs battery of described flexibility, monolithic area>=80cm ².

The thickness of described substrate layer is preferably 40 microns-48 microns.

Described substrate layer is preferably semiconductor grade P type silicon layer.

Compared with prior art, advantage of the present utility model is:

1, hull cell gross thickness of the present utility model is less than 50 microns, flexible, can be curling, and monolithic area can be greater than 80cm ², conversion efficiency surpasses 30%, and specific power is greater than the super-thin high efficient battery of 2000W/Kg.

2, this battery is usingd the alternative monocrystalline germanium of monocrystalline silicon, monocrystalline GaAs substrate, can greatly reduce the cost of multi-junction gallium arsenide battery.

3, the utility model battery is usingd flexible ultra-thin silicon as final substrate, can obtain great specific power (>2000W/Kg), greatly reduces the launch cost of space power system.

Accompanying drawing explanation

Fig. 1 is the structural representation of the silica-based gallium arsenide film battery of flexibility prepared of the utility model;

Wherein, the 1st, substrate layer, the 2nd, Ge-Si resilient coating, the 3rd, Ge battery layers, the 4th, tunnel junction A layer, the 5th, GaAs battery layers, the 6th, tunnel junction B layer, the 7th, GaInP battery layers, the 8th, Window layer, the 9th, ohmic contact layer, the 10th, antireflection film layer, the 11st, front electrode, the 12nd, backplate.

Embodiment

In order to further illustrate structure of the present utility model and feature, below in conjunction with embodiment and accompanying drawing, the utility model is described in further detail.

Embodiment 1:

The silica-based GaAs battery of a kind of flexibility, be followed successively by from the bottom to top substrate layer 1, Ge-Si resilient coating 2, Ge battery layers 3, tunnel junction A layer 4, GaAs battery layers 5, tunnel junction B layer 6, GaInP battery layers 7, Window layer 8, ohmic contact layer 9 and antireflection film layer 10, and on antireflection film layer 10, be provided with front electrode 11, at substrate layer 1 lower surface, be provided with backplate 12, described substrate layer 1 is the flexible silicon substrate layer of 40 microns-48 microns of thickness; Gross thickness≤50 micron of the silica-based GaAs battery of described flexibility, monolithic area>=80cm ².Described layer-of-substrate silicon is semiconductor grade P type silicon.

The preparation method of the silica-based GaAs battery of above-mentioned flexibility, comprises the following steps:

1) the thick SiO of 50nm that grows on silicon substrate A and silicon substrate B ₂layer, temperature 900 degree;

2) after 15% HCl solution is washed, million sonications then complete bonding by the SiO2 interface of silicon substrate A and B in bonding apparatus, then from room temperature, are warming up to gradually 850 ℃, and heat treatment time is 60-120min; 3) through corase grind, rough polishing and essence, throw, silicon substrate A is thinned to 45-48 micron thickness, be made into ultra-thin silicon substrate A;

4) clean the rear ultra high vacuum CVD(VHT-CVD that adopts), 650 degree, 2 microns of silicon substrate A superficial growth Ge-Si resilient coatings;

5) adopt MOCVD on Ge-Si resilient coating, grow successively Ge battery layers, tunnel junction A layer, GaAs battery layers, tunnel junction B layer, GaInP battery layers, Window layer and contact layer.

6) adopt photoresist that upper surface and side are protected, adopt 20% KOH solution corrosion lower surface silicon substrate B, adopt 10% hydrofluoric acid corrosion SiO ₂layer;

7) remove photoresist;

8) adopt laser transfer technology print front surface A g electrode and back side Al back surface field, drying oven 600 degree bottom electrodes are reinforced.

9) plating ZnS, MgF ₄antireflective coating.

The performance comparison data of the silica-based GaAs battery of above-mentioned flexibility are in Table 1.

Table 1 battery performance contrast experiment data

Claims

1. the silica-based GaAs battery of flexibility, comprise substrate layer (1), it is characterized in that, on substrate layer (1), there are successively Ge-Si resilient coating (2), Ge battery layers (3), tunnel junction A layer (4), GaAs battery layers (5), tunnel junction B layer (6), GaInP battery layers (7), Window layer (8), ohmic contact layer (9) and antireflection film layer (10), and antireflection film layer (10) is provided with front electrode (11), substrate layer (1) lower surface is provided with backplate (12); Described substrate layer (1) is the flexible silicon substrate layer of thickness≤48 micron; Gross thickness≤50 micron of the silica-based GaAs battery of described flexibility, monolithic area>=80cm ².

2. flexible silica-based GaAs battery according to claim 1, is characterized in that, the thickness of described substrate layer (1) is 40 microns-48 microns.

3. according to flexible silica-based GaAs battery described in claim 1 or 2, it is characterized in that, described substrate layer (1) is semiconductor grade P type silicon layer.