CN108269879A - GaInP/GaAs/Ge three-joint solar cells of Ge/Si substrates and preparation method thereof - Google Patents
GaInP/GaAs/Ge three-joint solar cells of Ge/Si substrates and preparation method thereof Download PDFInfo
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- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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Abstract
The present invention relates to a kind of GaInP/GaAs/Ge three-joint solar cells of Ge/Si substrates and preparation method thereof, wherein, the preparation method includes：Si substrates are chosen, Ge/Si substrates are formed in the Si Growns Ge epitaxial layers；SiO is formed in the Ge/Si substrate surfaces2Oxide layer；With laser, crystallization process makes the Ge epitaxial layers crystallization and etches the SiO again2Oxide layer；GaInP/GaAs/Ge three-joint solar cell layers are prepared on the Ge epitaxial layers；Contact electrode is prepared to complete the preparation of the GaInP/GaAs/Ge three-joint solar cells of Ge/Si substrates；Heretofore described Ge/Si substrates are thin Ge epitaxial layers to be formed through two-step method by magnetron sputtering, then crystallization process grows Ge transverse crystallizings again with laser, can effectively reduce the dislocation density of Ge/Si substrates.Meanwhile also more aforementioned common methods are thinner for Ge film thicknesses on Si substrates, so as to be more advantageous to the transmission of light.Therefore, the GaInP/GaAs/Ge three-joint solar cells of the Ge/Si substrates of high quality prepared by the present invention will obtain higher electricity conversion.
Description
Technical field
The present invention relates to technical field of integrated circuits, tri- knots of GaInP/GaAs/Ge of more particularly to a kind of Ge/Si substrates are too
Positive energy battery and preparation method thereof.
Background technology
Solar energy is dirty to alleviating increasingly serious energy crisis and environment as a kind of important reproducible clean energy resource
Dye is of great significance to.Solar cell is the technical principle for the opto-electronic conversion for utilizing semiconductor, and solar energy source is straight
Switch through the technology for changing electric energy into.Compared with other energy, solar cell power generation has the following advantages：Without exhausted dangerous；It is absolutely dry
Only；It is not limited by resource distribution region；It can nearby generate electricity at electricity consumption；Energy quality is high；It is short to obtain the time that the energy is spent.
Solar cell can be divided mainly into silicon solar cell and compound semiconductor (such as GaAs, cadmium telluride) solar cell
Two classes, for current photovoltaic technology, silicon (Si) and GaAs (GaAs) base III-V group solar cell are to be studied and real
Two big emphasis of existing industrialization.The theoretical efficiency of wherein silion cell is about 23%, and the gallium arsenide cells theoretical efficiency of unijunction
Reach 27%.At present, the laboratory record efficiency of unijunction GaAs hull cells is 26.1%, the value already close to theoretical limit,
From the perspective of solar energy utilization ratio or than relatively low.In order to develop high performance solar batteries technology, it is necessary to it is single to break through limitation
The main constraint of junction battery efficiency.And a kind of important method for improving battery efficiency is folded using more knots (multi-junction)
Layer structure, it is common practice that be sequentially connected in series the different two or more sub- batteries of band gap together by band gap size.Work as the sun
During light incidence, high-energy photons are first absorbed by the big sub- battery of band gap, and subsequent energy photons are again by the relatively narrow sub- battery of band gap
It absorbs, and so on.Its essence is equivalent to is divided into several sections solar spectrum, each sub- battery absorb with its band gap it is immediate that
One section of light.The absorptivity to low energy end spectrum had not only been increased in this way, but also has reduced the energy loss of high-energy photons, improved electricity
The advantage of pond efficiency is apparent.More III-V compounds of group solar cells of knot due to having higher photoelectric conversion efficiency,
The key content of high performance solar batteries technical research is become.
At present, more III-V race's solar cells of knot are mostly using GaAs, Ge and Si base Ge films as substrate.Wherein, GaAs and
Ge substrate prices compare Si substrates costliness, and mechanical performance and thermal stability are also not so good as Si substrates.Although Si base Ge substrates have both Si
The advantage of substrate and Ge films, but Ge films are prepared on Si substrates still has technical problem to need to solve.For being prepared on Si substrates
For two methods of the common content gradually variational SiGe buffer layer techniques of Ge films and hypo-hyperthermia two-step growth method, the former technique
More complicated, buffer layer is thicker；The latter still can not solve the appearance of a large amount of dislocations in Ge epitaxial layers, this causes solar cell
Photoelectric conversion efficiency substantially reduces.
Therefore, which kind of material and technique is selected to become particularly to make the solar cell of higher electricity conversion
It is important.
Invention content
In order to obtain the solar cell of higher electricity conversion, the present invention provides a kind of Ge/Si substrates
GaInP/GaAs/Ge three-joint solar cells and preparation method thereof.The technical problem to be solved in the present invention passes through following technical side
Case is realized：
The embodiment provides a kind of preparations of the GaInP/GaAs/Ge three-joint solar cells of Ge/Si substrates
Method, wherein, the preparation method includes：
(a) Si substrates are chosen, Ge/Si substrates are formed in the Si Growns Ge epitaxial layers；
(b) SiO is formed in the Ge/Si substrate surfaces2Oxide layer；
(c) with laser, crystallization (LaserRe-Crystallization, abbreviation LRC) technique makes the Ge extensions layer crystal again
Change and etch the SiO2Oxide layer；
(d) GaInP/GaAs/Ge three-joint solar cell layers are prepared on the Ge epitaxial layers；
(e)) GaAs contact layers and reflectance coating are prepared on the GaInP/GaAs/Ge three-joint solar cells layer；
(f) contact electrode is prepared to complete the preparation of the GaInP/GaAs/Ge three-joint solar cells of Ge/Si substrates.
In one embodiment of the invention, the Si substrates are 2 μm of single crystalline Si；The Ge epitaxial layers are splashed by magnetic control
Method is penetrated to be grown with two-step process on the Si substrates.
In one embodiment of the invention, the Ge epitaxy layer thickness is 500nm.
In one embodiment of the invention, the SiO2The thickness of oxide layer is 150nm.
In one embodiment of the invention, the GaInP/GaAs/Ge three-joint solar cells layer includes：Ge base areas,
Cell back field in Ge emitter region, GaAs Window layers, the first GaAs tunnel knots, GaAs, GaAs base areas, GaAs emitter region,
Ga0.51In0.49P Window layers, the 2nd GaAs tunnel knots, Ga0.51In0.49P tops cell back field, Ga0.51In0.49P base areas,
Ga0.51In0.49P emitter region and Al0.53In0.47P Window layers.
In one embodiment of the invention, the laser crystallization technological parameter is：Laser power is 6.1kW/m, laser
Movement speed is 400mm/min.
In one embodiment of the invention, step (d) includes：
(d1) Ge bottoms battery layers are formed on the Ge/Si substrates；
(d2) the first tunnel knot is formed on the battery of the Ge bottoms；
(d3) battery layers in GaAs are formed in first tunnel junctions；
(d4) the second tunnel knot is formed on battery in the GaAs；
(d5) Ge is formed in second tunnel junctions0.51In0.49P pushes up battery layers.
In one embodiment of the invention, step (e) includes：
(e1) using MBE techniques, in the Al0.53In0.47P window layer surfaces form the GaAs contact layers；GaAs is contacted
Layer thickness is 0.5um；
(e2) at 250 DEG C, using pecvd process, in the Al0.53In0.47P Window layers form the reflectance coating.It is described
Reflection film thickness is 100nm.
In one embodiment of the invention, the material of the reflectance coating is Si3N4。
An alternative embodiment of the invention provides a kind of GaInP/GaAs/Ge three-joint solar cells of Ge/Si substrates,
The GaInP/GaAs/Ge three-joint solar cells are prepared by claim 1~9 any one of them method and are formed.
Compared with prior art, the invention has the advantages that：
1st, the present invention uses silicon materials to reduce the manufacture cost of solar cell as substrate；
2nd, the present invention is served as a contrast by the Ge film thicknesses that continuous laser auxiliary crystallization Ge/Si substrates obtain less than conventional method Si
Ge film thicknesses on bottom are more advantageous to light enhancing and penetrate, and then can improve solar cell properties；
3rd, the present invention can effectively reduce the dislocation density of Ge/Si substrates by continuous laser auxiliary crystallization, be served as a contrast based on Ge/Si
The GaInP/GaAs/Ge three-joint solar cells at bottom can effectively reduce recombination current density, turn so as to obtain higher photoelectricity
Change efficiency.
Description of the drawings
Below in conjunction with attached drawing, the specific embodiment of the present invention is described in detail.
Fig. 1 is a kind of system of the GaInP/GaAs/Ge three-joint solar cells of Ge/Si substrates provided in an embodiment of the present invention
Preparation Method flow chart；
Fig. 2 is a kind of schematic diagram of LRC techniques provided in an embodiment of the present invention；
Fig. 3 is the phase transition temperature relation schematic diagram in a kind of thin film actuated light irradiation process provided in an embodiment of the present invention；
Fig. 4 is a kind of FEM Numerical Simulation schematic diagram of the technique of Ge/Si substrate materials provided in an embodiment of the present invention；
Fig. 5 is a kind of continuous LRC technological effects schematic diagram provided in an embodiment of the present invention；And
Fig. 6 a- Fig. 6 p are a kind of GaInP/GaAs/Ge three-joint solar cells of Ge/Si substrates of the embodiment of the present invention
Preparation method schematic diagram；
Specific embodiment
Further detailed description is done to the present invention, but embodiments of the present invention are not limited to reference to specific embodiment
This.
Embodiment one
Fig. 1 is referred to, Fig. 1 is a kind of tri- knot sun of GaInP/GaAs/Ge of Ge/Si substrates provided in an embodiment of the present invention
The preparation method of energy battery, wherein, the preparation method includes：
(a) Si substrates are chosen, Ge/Si substrates are formed in the Si Growns Ge epitaxial layers；
(b) SiO is formed in the Ge/Si substrate surfaces2Oxide layer；
(c) with laser, crystallization (LaserRe-Crystallization, abbreviation LRC) technique makes the Ge extensions layer crystal again
Change and etch the SiO2Oxide layer；
(d) GaInP/GaAs/Ge three-joint solar cell layers are prepared on the Ge epitaxial layers；
(e) GaAs contact layers and reflectance coating are prepared on the GaInP/GaAs/Ge three-joint solar cells layer；
(f) contact electrode is prepared to complete the preparation of the GaInP/GaAs/Ge three-joint solar cells of Ge/Si substrates.
Wherein, the Si substrates are 2 μm of single crystalline Si；The Ge epitaxial layers are by magnetron sputtering method on the Si substrates
It is grown with two-step process.
Further, the Ge epitaxy layer thickness is 500nm.
Wherein, the Ge epitaxial layers are grown by magnetron sputtering method, deposition rate is high, and film is high-quality, suitable
Large-scale production.
Preferably, the SiO2The thickness of oxide layer is 150nm.
Wherein, the GaInP/GaAs/Ge three-joint solar cells layer includes：Ge base areas, Ge emitter region, GaAs windows
Cell back field, GaAs base areas, GaAs emitter region, Ga in layer, the first GaAs tunnel knots, GaAs0.51In0.49P Window layers, second
GaAs tunnel knots, Ga0.51In0.49P tops cell back field, Ga0.51In0.49P base areas, Ga0.51In0.49P emitter region and
Al0.53In0.47P Window layers.
Wherein, crystallization process is laser power to the laser again is 6.1kW/m, laser traverse speed 400mm/min, even
Crystallization causes the dislocation rate of the Ge epitaxial layers to substantially reduce to continuous laser again.
Wherein, step (d) includes：
(d1) Ge bottoms battery layers are formed on the Ge/Si substrates；
(d2) the first tunnel knot is formed on the battery of the Ge bottoms；
(d3) battery layers in GaAs are formed in first tunnel junctions；
(d4) the second tunnel knot is formed on battery in the GaAs；
(d5) Ge is formed in second tunnel junctions0.51In0.49P pushes up battery layers.
Wherein, step (e) includes：
(e1) using MBE techniques, in the Al0.53In0.47P window layer surfaces form the GaAs contact layers；GaAs is contacted
Layer thickness is 0.5um；
(e2) at 250 DEG C, using pecvd process, in the Al0.53In0.47P Window layers form the reflectance coating.It is described
Reflection film thickness is 100nm.
Wherein, the material of the reflectance coating is Si3N4。
Fig. 2 is referred to, Fig. 2 is a kind of schematic diagram of LRC techniques provided in an embodiment of the present invention.First use magnetron sputtering technique
Or thin Ge is formed through two-step method using chemical vapor deposition (Chemical Vapor Deposition, abbreviation CVD) technique
Epitaxial layer, then the dislocation mismatch between Ge and Si is discharged with continuous LRC transverse directions, so as to reduce in epitaxial layer since lattice mismatch draws
The dislocation risen, prepares Ge/Si substrates best in quality.
Fig. 3 is referred to, Fig. 3 is that the phase transition temperature in a kind of thin film actuated light irradiation process provided in an embodiment of the present invention closes
It is schematic diagram；Wherein, the principle of LRC is that material surface transient heating is allowed to using the high-energy of laser to melt crystallization,
Matter is the process of thermal induced phase transition, this point also has essential distinction with traditional laser thermal anneal.Therefore, LRC can be regarded as laser
To the fuel factor of film, i.e. laser is melted illuminated film by fuel factor, and crystallization is allowed to cool in the shorter time
Process.Crystallization is broadly divided into following three phases to laser again：
1) interaction stage of laser and substance.This stage material absorbing laser energy is changed into thermal energy, reaches fusing
State.During high-order harmonics spectrum, electric property, optical property, constructional aspect of substance etc. change.
2) the heat transfer stage of material.According to thermodynamics basic law, laser action in will occur on material conduction, it is right
Three kinds of heat transfer types of stream and radiation, heating speed is fast at this time, and temperature gradient is big.
3) mass transfer stage of the material under laser action.Mass transfer, i.e. substance move to separately from a certain position in space or space
The phenomenon that one position.In this stage, the particle setting in motion of energy is obtained through laser emission.There are two kinds of forms for mass transfer：Diffusion
Mass transfer and convective mass transfer.What diffusion mass transfer represented is the microscopic motion of atom or molecule；Convective mass transfer is then the macroscopic view fortune of fluid
It is dynamic.For melting crystallization mechanism completely, the temperature variations of laser crystallization rear film again are as shown in Figure 3.
It assists preparing high quality void Ge substrates using LRC technologies, it is desirable that Ge layers of temperature of void are at least up to molten under laser action
Point, and close proximity to scorification point, reach the nearly complete molten condition of preferable crystallization, ensure the follow-up perfect crystallization of Ge crystal grain.Together
When, the Si substrate layers below epitaxial layer cannot reach fusing point, ensure that LRC does not have an impact substrate.It is accordingly, it is determined that rational
LRC related process parameters (such as laser power density, movement speed) control epitaxial layer Temperature Distribution, will be the technique success or failure
Key.Fig. 4 is referred to, Fig. 4 is a kind of finite element simulation knot of the technique of Ge/Si substrate materials provided in an embodiment of the present invention
Fruit schematic diagram.In figure, ordinate represents Ge/Si system thickness, using sharp on the Ge/Si substrates of Ge epitaxy layer thickness 500nm
Luminous power is 6.1kW/m, and the process conditions that laser traverse speed is 400mm/min can realize that Ge melts crystallization and Si does not melt.
Fig. 5 is referred to, Fig. 5 is a kind of continuous laser provided in an embodiment of the present invention crystallization process effect diagram again.Swash
Light is pointed into sample stage by total reflection prism, and passes through in convex lens focus to sample, thin in thermal histories so as to prevent
Liquid after film melts is affected by gravity and flows the influence generated to crystallization.Laser again crystallization when, stepper motor drive sample
Platform moves, and is often moved to a position and carries out a laser irradiation, the position is made to become the blockage with high-energy, is then stopped
Only laser irradiation, sample stage are further continued for laser irradiation when being moved to the next position.So it is whole so that laser is irradiated to successively for cycle
A film surface so far completes continuous laser crystallization process again.
In addition, it is necessary to it emphasizes, LRC techniques of the invention and laser annealing (laser annealing) technique
There is significant difference.Laser annealing technique belongs to thermal anneal process scope.It uses laser only to be carried out as heat source to semiconductor
Heat treatment, does not generate phase transition process.And laser of the present invention, again in crystallization process processing procedure, semi-conducting material can occur twice
Phase transformation -- melt the solid-phase crystallization again that liquefies then.Thus, both this technique has significant difference in itself.
From the foregoing, it will be observed that the Ge/Si substrates are thin Ge epitaxial layers to be formed through two-step method, then swashed with continuous by magnetron sputtering
Light crystallization grows Ge transverse crystallizings, can effectively reduce the dislocation density of Ge/Si substrates.Meanwhile Ge film thicknesses on Si substrates
Also more aforementioned common methods are thinner, so as to be more advantageous to the transmission of light.Therefore, the Ge/Si of high quality prepared by the present invention
The GaInP/GaAs/Ge three-joint solar cells of substrate will obtain higher electricity conversion.
Embodiment two
Please refer to a kind of GaInP/GaAs/Ge for Ge/Si substrates that Fig. 6 a- Fig. 6 p, Fig. 6 a- Fig. 6 p are the embodiment of the present invention
The preparation method of three-joint solar cell, on the basis of above-described embodiment, the present embodiment will be in more detail to the present invention's
Technological process is introduced.This method includes：
S101, as shown in Figure 6 a, it is original material to choose the monocrystalline silicon Si substrate slices 001 that thickness is 2 μm；
S102, as shown in Figure 6 b grows one layer on the Si substrates 001 using magnetron sputtering method with two-step process
The Ge epitaxial layers 002 of 500nm thickness form Ge/Si substrates, deposit film by magnetron sputtering method, deposition rate is high, and film
It is high-quality, it is suitable for mass production；
S103, as fig. 6 c, using CVD techniques, in the SiO of Ge/Si substrate surfaces deposit 150nm2Oxide layer
003；
S104,500K is first heated the material on the basis of Fig. 6 c, SiO is then carried by LRC techniques crystallization2Oxidation
The Ge epitaxial layers 002 of layer 003, wherein laser power are 6.1kW/m, and laser traverse speed 400mm/min then makes material
Expect natural cooling.Continuous laser crystallization causes the dislocation rate of Ge epitaxial layers 002 to substantially reduce；
S105, as shown in fig 6d, the SiO in Fig. 6 c is etched using dry etch process2Oxide layer 003, obtains height
The Ge/Si substrates of quality.
It is prepared by S106, bottom battery layers；Here is to prepare the experimental detail of different solar cell layers：The preparation of GaAs materials
TMGa is used as group III source, ASH3For group V source, 500-600 DEG C of GaAs individual layer doped growings temperature.The p-type layer of GaAs materials
Dopant selects C, and n-layer dopant selects Se.Ge0.51In0.49The preparation of P materials is with TMGa, TMIn and PH3For source, reative cell
60 Torrs of pressure, 80-120 revs/min of substrate bracket disk rotating speed, wherein 650-680 DEG C of growth parameter(s), H2Se is as GalnP2N-shaped doping
Agent, using DEZn as the p-type dopant of InGaP.
S1061, as shown in fig 6e prepares base area and the emitter region of bottom battery.Using MBE techniques, extension is given birth at 500 DEG C
Base area 004 of the Ge materials of long 500nm thickness as bottom battery, and p-type doping is carried out to it, doping concentration is 2 × 1017cm-3；
Emitter region 005 of the Ge materials of subsequent extension 300nm thickness again as bottom battery, and n-type doping, doping concentration 1 are carried out to it
×1018cm-3。
S1062, as shown in Figure 6 f, utilizes metallo-organic compound chemical gaseous phase deposition (Metal-organic
Chemical Vapor Deposition, abbreviation MOCVD) technique, deposition thickness is the GaAs of 200nm the bottom of as at 600 DEG C
The Window layer 006 of battery, and pass through thermal diffusion technology and n-type doping, concentration about 1 × 10 are carried out to Window layer18cm-3。
It is prepared by S107, middle battery layers；
S1071, as shown in figure 6g prepares the GaAs tunnel knots of bottom battery and middle battery.The GaAs tunnel knots reative cell
60 Torrs of pressure, 100 revs/min of graphite substrate support rotary speed.Grow n-type doping layer 007 first, doping concentration for 1 ×
1019cm-3, 550 DEG C of growth temperature, using bradyauxesis, growth rate 5nm/min, thickness about 15nm；Then 600 are warming up to
DEG C growing P-type doped layer 008, doping concentration are 5 × 1019cm-3, growth rate is then 10nm/min, thickness about 15nm.
S1072, as shown in figure 6h, using MOCVD techniques, deposition thickness is the GaAs material conducts of 100nm at 600 DEG C
Cell back field 009 in preparation, and p-type doping is carried out to back surface field layer, a concentration of 5 × 1018cm-3。
S1073, as shown in Fig. 6 i, using MOCVD techniques, the base area 010 of battery and transmitting in GaAs are deposited at 600 DEG C
Area 011.Base area thickness about 2um, n-type doping, a concentration of 1 × 1017cm-3, emitter region thickness about 0.5um, n-type doping is a concentration of
1×1018cm-3。
S1074, as shown in Fig. 6 j, using MOCVD techniques, deposition thickness is the Ge of 100nm at 650 DEG C0.51In0.49P makees
For the Window layer 012 of middle battery, and pass through thermal diffusion technology and n-type doping, concentration about 2 × 10 are carried out to Window layer18cm-3。
It is prepared by S108, top battery layers；
S1081, as shown in Fig. 6 k, prepare the GaAs tunnel knots of top battery and middle battery.N-type doping layer 013 is grown first,
Doping concentration is 1 × 1019cm-3, 550 DEG C of growth temperature, thickness about 15nm；Then 600 DEG C of growing P-type doped layers are warming up to
014, doping concentration is 5 × 1019cm-3, thickness about 15nm.
S1082, as shown in Fig. 6 l, utilize MOCVD techniques, deposit Ga0.51In0.49P materials are as preparation top cell back field
015.Back surface field layer thickness is 100nm, is adulterated using p-type, a concentration of 1 × 1018cm-3。
S1083, as shown in Fig. 6 m, utilize MOCVD techniques, deposit Ga0.51In0.49Base area 016 of the P materials as top battery
With emitter region 017.Base area thickness about 500nm, n-type doping, a concentration of 1 × 1017cm-3, emitter region thickness about 100nm, p-type mixes
It is miscellaneous, a concentration of 1 × 1018cm-3。
S1084, as shown in Fig. 6 n, deposit Al0.53In0.47Window layers 018 of the P as top battery, and N is carried out to Window layer
Type adulterates, concentration about 2 × 1018cm-3, window layer thickness 30nm.
S108, GaAs contact layers and reflectance coating are prepared.As shown in Fig. 6 o, the GaAs of epitaxial growth 0.5um thickness is as window
Layer 019, and a concentration of 1 × 10 is carried out to GaAs19cm-3N-type doping, and use plasma-reinforced chemical vapor deposition technology
In the silicon nitride that 250 DEG C deposit 100nm thickness as antireflective coating 020.
S109, contact electrode is prepared.
It is deposited back electrode first, when plated film continuously plates back electrode 021 successively in evaporation coating machine, and back electrode has been deposited
Afterwards, in N2It is placed under protection in sintering furnace and 20min is sintered with 380 DEG C of temperature, to enhance the combination of back electrode and silicon, and with phase
Positive electrode 022 is prepared with mode, as shown in Fig. 6 p.
Embodiment three
A kind of GaInP/GaAs/Ge three-joint solar cells of Ge/Si substrates provided in an embodiment of the present invention, wherein, institute
It states GaInP/GaAs/Ge three-joint solar cells and is prepared as the method described in above-described embodiment and formed.
In the present embodiment, above-mentioned various technological parameters are the conventional means for example, according to those skilled in the art
The transformation done is the protection domain of the application.
In conclusion the specific case used herein GaInP/GaAs/Ge tri- of Ge/S i substrate a kind of to the present invention
The preparation method of joint solar cell is expounded, and the explanation of above example is only intended to help to understand method of the invention
And its core concept；Meanwhile for those of ordinary skill in the art, thought according to the present invention, in specific embodiment and
There will be changes in application range, in conclusion the content of the present specification should not be construed as limiting the invention, the present invention
Protection domain should be subject to appended claim.
Claims (10)
- A kind of 1. preparation method of the GaInP/GaAs/Ge three-joint solar cells of Ge/Si substrates, which is characterized in that the system Preparation Method includes：(a) Si substrates are chosen, Ge/Si substrates are formed in the Si Growns Ge epitaxial layers；(b) SiO is formed in the Ge/Si substrate surfaces2Oxide layer；(c) with laser, crystallization process makes the Ge epitaxial layers crystallization and etches the SiO again2Oxide layer；(d) GaInP/GaAs/Ge three-joint solar cell layers are prepared on the Ge epitaxial layers；(e) GaAs contact layers and reflectance coating are prepared on the GaInP/GaAs/Ge three-joint solar cells layer；(f) contact electrode is prepared to complete the preparation of the GaInP/GaAs/Ge three-joint solar cells of Ge/Si substrates.
- 2. preparation method according to claim 1, which is characterized in that the Si substrates are 2 μm of single crystalline Si；Outside the Ge Prolong layer to be grown with two-step process on the Si substrates by magnetron sputtering method.
- 3. preparation method according to claim 1, which is characterized in that the Ge epitaxy layer thickness is 500nm.
- 4. preparation method according to claim 1, which is characterized in that the SiO2The thickness of oxide layer is 150nm.
- 5. preparation method according to claim 1, which is characterized in that the GaInP/GaAs/Ge three-joint solar cells Layer includes：Cell back field, GaAs base areas, GaAs in Ge base areas, Ge emitter region, GaAs Window layers, the first GaAs tunnel knots, GaAs Emitter region, Ga0.51In0.49P Window layers, the 2nd GaAs tunnel knots, Ga0.51In0.49P tops cell back field, Ga0.51In0.49P base areas, Ga0.51In0.49P emitter region and Al0.53In0.47P Window layers.
- 6. preparation method according to claim 1, which is characterized in that in step (c), crystallization process is the laser again： Laser power is 6.1kW/m, laser traverse speed 400mm/min.
- 7. preparation method according to claim 1, which is characterized in that step (d) includes：(d1) Ge bottoms battery layers are formed on the Ge/Si substrates；(d2) the first tunnel knot is formed on the battery of the Ge bottoms；(d3) battery layers in GaAs are formed in first tunnel junctions；(d4) the second tunnel knot is formed on battery in the GaAs；(d5) Ge is formed in second tunnel junctions0.51In0.49P pushes up battery layers.
- 8. preparation method according to claim 1, which is characterized in that step (e) includes：(e1) using MBE techniques, in the Al0.53In0.47P window layer surfaces form the GaAs contact layers；GaAs contacts thickness It spends for 0.5um；(e2) at 250 DEG C, using pecvd process, in the Al0.53In0.47P Window layers form the reflectance coating.The reflection Film thickness is 100nm.
- 9. preparation method according to claim 8, which is characterized in that the material of the reflectance coating is Si3N4。
- A kind of 10. GaInP/GaAs/Ge three-joint solar cells of Ge/Si substrates, which is characterized in that the GaInP/GaAs/ Ge three-joint solar cells are prepared by claim 1~9 any one of them method and are formed.
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| CN112289881A (en) * | 2020-10-27 | 2021-01-29 | 北京工业大学 | GaInP/GaAs/Ge/Si four-junction solar cell and preparation method thereof |
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