CN103489958B - The preparation method of the silica-based gallium arsenide cells of a kind of flexibility - Google Patents
The preparation method of the silica-based gallium arsenide cells of a kind of flexibility Download PDFInfo
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- CN103489958B CN103489958B CN201310376522.7A CN201310376522A CN103489958B CN 103489958 B CN103489958 B CN 103489958B CN 201310376522 A CN201310376522 A CN 201310376522A CN 103489958 B CN103489958 B CN 103489958B
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- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 36
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 18
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 52
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 52
- 239000010703 silicon Substances 0.000 claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 238000000576 coating method Methods 0.000 claims abstract description 17
- 239000011248 coating agent Substances 0.000 claims abstract description 16
- 238000005260 corrosion Methods 0.000 claims abstract description 10
- 230000007797 corrosion Effects 0.000 claims abstract description 10
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 10
- 238000005498 polishing Methods 0.000 claims abstract description 5
- 230000003647 oxidation Effects 0.000 claims abstract description 4
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000006117 anti-reflective coating Substances 0.000 claims description 4
- 239000000470 constituent Substances 0.000 claims description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 4
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000005083 Zinc sulfide Substances 0.000 claims description 2
- 239000003518 caustics Substances 0.000 claims description 2
- 230000003628 erosive effect Effects 0.000 claims description 2
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 230000007704 transition Effects 0.000 claims description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 13
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 230000005611 electricity Effects 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000001451 molecular beam epitaxy Methods 0.000 abstract 1
- 238000010248 power generation Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 23
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 2
- 238000000527 sonication Methods 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
- H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention relates to the preparation method of the silica-based gallium arsenide cells of a kind of flexibility, belong to thin-film solar cells and manufacture field, be applicable to ground high-effective concentration electricity generation system, simultaneously due to first-selection that the characteristics such as its efficient light amount are current space power systems.The method is prepared into ultra-thin silicon substrate after first adopting the oxidation of two panels monocrystalline silicon piece, bonding, polishing; metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) method is utilized to grow Ge-Si resilient coating and multijunction solar cell material; then front adopts photoresist protection; the back side adopts chemical corrosion to carry out thinning, is finally prepared into battery.This invention is using the ultra-thin silicon of flexibility as final substrate, great specific power (>2000W/Kg) can be obtained, greatly reduce the launch cost of space power system, its curling characteristic can adapt to the generating of ground particular surroundings more simultaneously, accelerates the application and development of solar power generation.
Description
Technical field
The invention provides a kind of method preparing flexible silica-based gallium arsenide film battery, belong to hull cell and manufacture field.
Background technology
GaAs battery has that good stability, Radiation hardness are strong, the most high feature of photoelectric conversion efficiency, is a kind of Space power sources product of most potential quality.At present, the western developed countries such as America and Japan Europe are competitively developed efficiently, the GaAs hull cell of lightweight, meet the needs of respective space flight military field and Future Outer Space power plant construction; Simultaneously flexible efficient gallium arsenide cells also can meet the special applications on ground.GaAs is a kind of direct gap semiconductor material, can make multijunction cell, effectively improve photoelectric conversion efficiency.
Traditional GaAs/Ge battery, because substrate adopts the rare of the element such as gallium, germanium, epitaxial device and complex process, not only manufacturing cost is high to make efficient GaAs battery, and quality is large, is difficult to realize large-scale application, especially aerospace industry.And Si base GaAs battery, because element silicon reserves in the earth's crust are very abundant, refinement difficulty is less, production cost is lower, can be used for the efficient GaAs battery of many knots of developing low-cost, simultaneously light, the thin and substrate of flexibility can meet the extensive energy supply needs of Future Satellite, space station and space (moon) construction of base.Therefore, exploitation flexibility that is efficient, low cost ties GaAs hull cell more is following aerospace inevitable choice.
Summary of the invention
The object of the invention is to: a kind of method preparing flexible silica-based gallium arsenide film battery is provided, prepare hull cell gross thickness and be about 50 microns, flexible, rollable, specific power is greater than the high-quality battery of 2000W/Kg, this battery has unique advantage in space power field, its efficient, flexible feature also has special applications in ground moving power supply such as the fields such as individual combat simultaneously.Meanwhile, substitute monocrystalline germanium, single crystalline gallium arsenide as substrate using monocrystalline silicon, greatly can reduce the cost of multi-junction gallium arsenide battery.
For achieving the above object, technical scheme of the present invention is:
A preparation method for the silica-based gallium arsenide cells of flexibility, comprises the following steps:
1) at the temperature of 850 DEG C-900 DEG C, dry-oxygen oxidation 30min-60min, silicon substrate A and silicon substrate B grow SiO respectively
2layer; Described SiO
2the thickness of layer is 20nm-50nm;
2) through cleaning after by the SiO of silicon substrate A
2the SiO of bed boundary and silicon substrate B
2bed boundary bonding, then from room temperature to 750 DEG C-850 DEG C, then at 750 DEG C-850 DEG C heat treatment time 60min-120min;
3), after heat treatment, throw through corase grind, rough polishing and essence, by the reduced thickness of silicon substrate A, be prepared into the ultra-thin silicon substrate A that thickness is less than 48 microns;
4) after cleaning, ultra-high vacuum CVD is adopted, at ultra-thin silicon substrate A superficial growth Ge-Si resilient coating at the temperature of 600 DEG C-700 DEG C; The thickness of described Ge-Si resilient coating is 1-2 micron;
5) then adopt MOCVD on Ge-Si resilient coating, grow Ge battery layers, tunnel layer, GaAs battery layers, tunnel junction layer, GaInP battery layers, Window layer and contact layer successively;
6) adopt photoresist by coated to silicon substrate A layer, Ge-Si resilient coating, Ge battery layers, tunnel layer, GaAs battery layers, tunnel junction layer, GaInP battery layers, Window layer and contact layer, adopt caustic corrosion to remove lower surface silicon substrate B, adopt hydrofluoric acid erosion removal SiO
2layer;
7) photoresist is removed;
8) make electrode, electrode is reinforced;
9) coated with antireflection rete.
Wherein, the A of silicon substrate described in step 1) is preferably semiconductor grade P-type silicon, and silicon substrate B is preferably solar level P-type silicon.
SiO described in step 1)
2layer thickness is preferably 40nm-50nm.
Step 2) described in room temperature preferably 20 DEG C-25 DEG C.
The thickness of the substrate of ultra-thin silicon described in step 3) A is preferably 40 microns-48 microns.
The constituent content of the preferred Ge of the resilient coating of Ge-Si described in step 4) increases from the inside to the outside in proportion, and the constituent content of Si reduces from the inside to the outside in proportion, realizes the transition from Si to Ge; Wherein in the side of ultra-thin silicon substrate A is.
Step 6) is preferably corroded silicon substrate B and is adopted mass concentration to be the KOH solution of 20%-50%, corrosion SiO
2layer employing mass concentration is the HF solution of 10%-20%.
Make electrode described in step 8) to be preferably: the electrode of upper and lower surface adopts evaporation coating technique or laser transfer technology to prepare, and upper surface electrode material is silver, and figure is grid line structure; Lower surface electrode material is aluminium, all covers.
Antireflective coating described in step 9) is preferably the double-layer reflection-decreasing membrane structure of zinc sulphide and magnesium fluoride.
Compared with prior art, advantage of the present invention is:
1, method of the present invention can be prepared hull cell gross thickness and is less than 50 microns, and flexible, rollable, monolithic area can be greater than 80cm
2, conversion efficiency is more than 30%, and specific power is greater than the super-thin high efficient battery of 2000W/Kg.
2, the battery that prepared by method of the present invention has unique advantage in space power field, its efficient, flexible feature also has special applications in ground moving power supply such as the fields such as individual combat simultaneously.
3, the battery that prepared by method of the present invention substitutes monocrystalline germanium, single crystalline gallium arsenide as substrate using monocrystalline silicon, greatly can reduce the cost of multi-junction gallium arsenide battery.
4, the battery prepared of method of the present invention is using the ultra-thin silicon of flexibility as final substrate, can obtain great specific power (>2000W/Kg), greatly reduce the launch cost of space power system.
Accompanying drawing explanation
Fig. 1 is the preparation flow schematic diagram of ultra-thin silicon substrate;
Fig. 2 is the preparation flow schematic diagram of flexible silica-based gallium arsenide film battery;
Fig. 3 is the structural representation of the silica-based gallium arsenide film battery of flexibility prepared by the present invention;
Wherein, 1 is silicon silicon chip A, and 2 is silicon silicon chip B, and 3 is SiO
2layer, 4 be thinning after silicon chip A(thickness <48um), 5 is Ge-Si resilient coatings, and 6 is epitaxial loayers, and 7 is photoresists, and 8 is front electrodes, and 9 is backplates, and 10 is antireflection film layers; 11 is ohmic contact layers, and 12 is Window layer, and 13 is GaInP batteries, and 14 is tunnel junctions, and 15 is GaAs batteries, and 16 is Ge batteries, and 17 is the SiO after bonding
2layer.
Embodiment
In order to further illustrate structure of the present invention and feature, below in conjunction with embodiment and accompanying drawing, the invention will be further described.
Embodiment 1:
As depicted in figs. 1 and 2, the invention provides a kind of method preparing flexible silica-based gallium arsenide film battery, comprise the following steps:
1) adopt thermal oxidation method, silicon substrate A and silicon substrate B grow the thick SiO of 50nm
2layer, temperature 900 degree; 2) through 15% HCl solution wash after, million sonications, then complete bonding by the SiO2 interface of silicon substrate A and B, are then warming up to 850 DEG C gradually from room temperature in bonding apparatus, heat treatment time 60min at 850 DEG C;
3) throw through corase grind, rough polishing and essence, silicon substrate A is thinned to 45-48 micron thickness, is made into ultra-thin silicon substrate A;
4) ultra high vacuum CVD(VHT-CVD is adopted after cleaning), 650 degree, silicon substrate A superficial growth Ge-Si resilient coating 2 microns;
5) adopt MOCVD on Ge-Si resilient coating, grow Ge battery layers, tunnel layer, GaAs battery layers, tunnel junction layer, GaInP battery layers, Window layer and contact layer successively.(as shown in Figure 3)
6) adopt photoresist upper surface and side to be protected, adopt 20% KOH solution corrosion lower surface silicon substrate B, adopt 10% hydrofluoric acid corrosion SiO
2layer;
7) photoresist is removed;
8) adopt laser transfer technology print front surface A g electrode and back side Al back surface field, drying oven 600 degree of bottom electrodes are reinforced.
9) ZnS, MgF is plated
4antireflective coating.
As shown in Figure 3, performance comparison data are in table 1 for the final structure schematic diagram of battery.
Table 1 battery performance contrast experiment data
Embodiment 2:
The invention provides a kind of method preparing flexible silica-based gallium arsenide film battery, comprise the following steps:
1) on silicon substrate A and silicon substrate B, the thick SiO of 30nm is grown
2layer, temperature 850 degree;
2) through 20% HCl solution wash after, million sonications, then by the SiO of silicon substrate A and B
2interface completes bonding in bonding apparatus, is then warming up to 800 DEG C gradually from room temperature, and 800 DEG C of heat treatment times are 120min;
3) throw through corase grind, rough polishing and essence, silicon substrate A is thinned to 40 micron thickness, is made into ultra-thin silicon substrate A;
4) ultra high vacuum CVD(VHT-CVD is adopted after cleaning), 700 degree, silicon substrate A superficial growth Ge-Si resilient coating 2 microns;
5) adopt MOCVD on Ge-Si resilient coating, grow Ge battery layers, tunnel layer, GaAs battery layers, tunnel junction layer, GaInP battery layers, Window layer and contact layer successively.(as shown in Figure 3)
6) adopt photoresist upper surface and side to be protected, adopt 50% KOH solution corrosion lower surface silicon substrate B, adopt 20% hydrofluoric acid corrosion SiO
2layer;
7) photoresist is removed;
8) adopt laser transfer technology print front surface A g electrode and back side Al back surface field, drying oven 600 degree of bottom electrodes are reinforced.
9) ZnS, MgF is plated
4antireflective coating.
As shown in Figure 3, performance is with embodiment 1 for the final structure schematic diagram of battery.
Above-described embodiment; further detailed description has been carried out to object of the present invention, technical scheme and beneficial effect; be understood that; the foregoing is only specific embodiment of the invention scheme; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1. a preparation method for the silica-based gallium arsenide cells of flexibility, is characterized in that, comprise the following steps:
1) at the temperature of 850 DEG C-900 DEG C, dry-oxygen oxidation 30min-60min, silicon substrate A and silicon substrate B grow SiO respectively
2layer; Described SiO
2the thickness of layer is 20nm-50nm;
2) through cleaning after by the SiO of silicon substrate A
2the SiO of bed boundary and silicon substrate B
2bed boundary bonding, then from room temperature to 750 DEG C-850 DEG C, then at 750 DEG C-850 DEG C heat treatment time 60min-120min;
3), after heat treatment, throw through corase grind, rough polishing and essence, by the reduced thickness of silicon substrate A, be prepared into the ultra-thin silicon substrate A that thickness is less than 48 microns;
4) after cleaning, ultra-high vacuum CVD is adopted, at ultra-thin silicon substrate A superficial growth Ge-Si resilient coating at the temperature of 600 DEG C-700 DEG C; The thickness of described Ge-Si resilient coating is 1-2 micron;
5) then adopt MOCVD on Ge-Si resilient coating, grow Ge battery layers, tunnel layer, GaAs battery layers, tunnel junction layer, GaInP battery layers, Window layer and contact layer successively;
6) adopt photoresist by coated to silicon substrate A layer, Ge-Si resilient coating, Ge battery layers, tunnel layer, GaAs battery layers, tunnel junction layer, GaInP battery layers, Window layer and contact layer, adopt caustic corrosion to remove lower surface silicon substrate B, adopt hydrofluoric acid erosion removal SiO
2layer;
7) photoresist is removed;
8) make electrode, electrode is reinforced;
9) coated with antireflection rete on the contact layer.
2. the preparation method of flexible silica-based gallium arsenide cells according to claim 1, it is characterized in that, the A of silicon substrate described in step 1) is semiconductor grade P-type silicon, and silicon substrate B is solar level P-type silicon.
3. the preparation method of flexible silica-based gallium arsenide cells according to claim 1 or 2, is characterized in that, SiO described in step 1)
2layer thickness is 40nm-50nm.
4. the preparation method of flexible silica-based gallium arsenide cells according to claim 1 or 2, it is characterized in that, the thickness of the substrate of ultra-thin silicon described in step 3) A is 40 microns-48 microns.
5. the preparation method of flexible silica-based gallium arsenide cells according to claim 1 or 2, it is characterized in that, in the resilient coating of Ge-Si described in step 4), the constituent content of Ge increases from the inside to the outside in proportion, and the constituent content of Si reduces from the inside to the outside in proportion, realizes the transition from Si to Ge; Wherein in the side of ultra-thin silicon substrate A is.
6. the preparation method of flexible silica-based gallium arsenide cells according to claim 1 or 2, is characterized in that, step 6) corrosion silicon substrate B adopts mass concentration to be the KOH solution of 20%-50%, corrosion SiO
2layer employing mass concentration is the HF solution of 10%-20%.
7. the preparation method of flexible silica-based gallium arsenide cells according to claim 1 or 2, it is characterized in that, antireflective coating described in step 9) is the double-layer reflection-decreasing membrane structure of zinc sulphide and magnesium fluoride.
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| CN103943724A (en) * | 2014-04-17 | 2014-07-23 | 南京大学 | Flexible and efficient crystalline silicon solar cell and manufacturing method thereof |
| CN104218108B (en) * | 2014-09-18 | 2017-04-26 | 厦门乾照光电股份有限公司 | High-efficiency flexible thin film solar cell |
| CN106711251A (en) * | 2015-11-16 | 2017-05-24 | 中国科学院福建物质结构研究所 | SIS/MIS structure flexible crystalline silicon battery |
| CN110120438B (en) * | 2018-02-05 | 2021-02-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | Preparation method of solar cell based on metal flexible substrate |
| CN110085706A (en) * | 2019-05-06 | 2019-08-02 | 上海神舟新能源发展有限公司 | A kind of thining method suitable for crystalline silicon |
| CN112366243B (en) * | 2019-07-25 | 2022-07-12 | 江苏宜兴德融科技有限公司 | Four-junction flexible solar cell and preparation method thereof |
| CN114678447B (en) * | 2022-03-28 | 2024-01-30 | 中锗科技有限公司 | Processing method of ultrathin Ge monocrystalline substrate for solar cell |
| CN115070515A (en) * | 2022-06-20 | 2022-09-20 | 长春长光圆辰微电子技术有限公司 | Method for reducing CMP large area edge peeling in GOI production |
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| CN101790794A (en) * | 2007-07-03 | 2010-07-28 | 微连器件公司 | Methods for fabricating thin film iii-v compound solar cell |
| CN102804408A (en) * | 2009-09-10 | 2012-11-28 | 密歇根大学董事会 | Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth |
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| CN101790794A (en) * | 2007-07-03 | 2010-07-28 | 微连器件公司 | Methods for fabricating thin film iii-v compound solar cell |
| CN102804408A (en) * | 2009-09-10 | 2012-11-28 | 密歇根大学董事会 | Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth |
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