CN105374664A - Preparation method of InP film composite substrate - Google Patents
Preparation method of InP film composite substrate Download PDFInfo
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- CN105374664A CN105374664A CN201510695855.5A CN201510695855A CN105374664A CN 105374664 A CN105374664 A CN 105374664A CN 201510695855 A CN201510695855 A CN 201510695855A CN 105374664 A CN105374664 A CN 105374664A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
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- H01L21/02387—Group 13/15 materials
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Abstract
The invention provides a preparation method of an InP film composite substrate. The preparation method comprises steps of: providing an InP substrate equipped with an implantation surface, performing ion implantation on the implantation surface, and forming a defect layer at a preset depth of the InP substrate; providing a support substrate and bonding the implantation surface, subjected to the ion implantation, of the InP substrate with the support substrate with high mechanical strength and low density to form a composite structure; and separating the InP substrate along the defect layer to form the InP film composite substrate on a substrate with high mechanical strength. By means of ion implantation and bonding, the preparation method may form the InP film composite substrate high mechanical strength. The dislocation density of the InP film is obviously lower than that of a heteroepitaxial InP film. Multiple films can be cyclically separated from one InP material. Thus, the utilization rate of the InP material is increased and the cost of the InP material is decreased. The support substrate with low density may reduce the weight of the whole composite substrate and is suitable for space application.
Description
Technical field
The invention belongs to functional semiconductor technical field of material, relate to a kind of preparation method of InP Film laminated substrate, particularly relate to a kind of method utilizing ion implantation and bonding techniques to prepare to have the InP Film laminated substrate of high mechanical properties.
Background technology
InP belongs to second generation semiconductor, has the features such as electron mobility is high, breakdown potential field intensity, is widely used in the making of device with high electron mobility.InP material is direct gap semiconductor, and energy gap is 1.34eV, and the emission wavelength that its alloy is corresponding is very applicable to optical-fibre communications, and the quantum well structure of InP-base has very high absorption efficiency to sunlight.Therefore, InP material also has range of application very widely in optical communication and photovoltaic industry.
The manufacturing process of InP-base electronic device is first on InP substrate material, pass through the method growth of device active layers such as MBE or MOCVD, then make corresponding device by microelectronic processing technology on active layer.For the microwave device of InP-base, usually in InP substrate, grow the heterostructures such as InAlAs/InGaAs and make high electron mobility material.For opto-electronic device and photovoltaic device, usually in InP substrate, grow In
xga
1-xas
yp
1-ylasing efficiency or photoelectric conversion efficiency etc. is improved Deng multi-layer quantum well structure.Meanwhile, can at InP-base Grown more piece solar cell.
Although InP material has range of application very widely as backing material, the poor mechanical properties of InP material, very frangible, monolithic price is very high.So the thickness of normally used InP substrate is thicker, and frangible in device fabrication processes, reduces the utilization ratio of InP material and improve the cost of InP substrate.In addition, because the mechanical strength of InP is low, InP-base microwave device, opto-electronic device and photovoltaic device prepared by InP substrate is caused to be restricted in actual application.
Therefore, a kind of preparation method of new InP substrate is provided to be the problem that those skilled in the art need to solve.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of preparation method of InP Film laminated substrate, for solve InP substrate material expensive in prior art and InP mechanical strength deficiency cause problem frangible in processing technology and follow-up use procedure.
For achieving the above object and other relevant objects, the invention provides a kind of preparation method of InP Film laminated substrate, described preparation method at least comprises:
1) provide InP substrate, described InP substrate has injection face, carries out ion implantation from described injection face, forms defect layer at the predetermined depth place of described InP substrate;
2) substrate is provided support, by described injection face and described support substrates bonding;
3) peel off from described defect layer, obtain InP Film laminated substrate.
As the scheme of a kind of optimization of the preparation method of InP Film laminated substrate of the present invention, described step 1) in, the ion injecting InP substrate from described injection face is H ion or He ion.
As the scheme of a kind of optimization of the preparation method of InP Film laminated substrate of the present invention, in described ion implantation process, described InP substrate temperature remains between-50 DEG C ~ 300 DEG C.
As the scheme of a kind of optimization of the preparation method of InP Film laminated substrate of the present invention, the implantation dosage of described H ion or He ion is 1E16cm
-2~ 1E18cm
-2between.
As the scheme of a kind of optimization of the preparation method of InP Film laminated substrate of the present invention, described step 1) in, the depth bounds forming defect layer in ion implantation InP substrate is 10nm to 50 μm.
As the scheme of a kind of optimization of the preparation method of InP Film laminated substrate of the present invention, described step 2) in, described support substrates is silicon, sapphire, carborundum, diamond, gallium nitride, GaAs or glass.
As the scheme of a kind of optimization of the preparation method of InP Film laminated substrate of the present invention, described support substrates is crystal, polycrystalline or non-crystalline material.
As the scheme of a kind of optimization of the preparation method of InP Film laminated substrate of the present invention, described step 2) in, the method for bonding is Direct Bonding, dielectric layer bonding, metal bonding or anode linkage.
As the scheme of a kind of optimization of the preparation method of InP Film laminated substrate of the present invention, described dielectric layer bonding is growth dielectric layer bonding, polymer-bound, melten glass bonding or spin-coating glass bonding.
As the scheme of a kind of optimization of the preparation method of InP Film laminated substrate of the present invention, described step 3) in, by the mode of heating anneal, InP substrate material is peeled off from described defect layer.
As the scheme of a kind of optimization of the preparation method of InP Film laminated substrate of the present invention, described heating anneal is direct high annealing or hypo-hyperthermia annealing.
As the scheme of a kind of optimization of the preparation method of InP Film laminated substrate of the present invention, adopt the temperature range of described direct high annealing to be 200 DEG C ~ 800 DEG C, annealing time is 10 seconds to 24 hours.
As the scheme of a kind of optimization of the preparation method of InP Film laminated substrate of the present invention, adopt described hypo-hyperthermia annealing way for first carrying out low temperature preannealing carries out high temperature after annealing again, wherein, the temperature range of described low temperature preannealing is room temperature to 250 DEG C, and annealing time is 1 minute to 24 hours; The temperature range of described high temperature after annealing is 200 ~ 800 DEG C, and annealing time is 10 seconds to 24 hours
As mentioned above, the preparation method of InP Film laminated substrate of the present invention, comprise step: first provide InP substrate, described InP substrate has injection face, carries out ion implantation from described injection face, forms defect layer at the predetermined depth place of described InP substrate; Then substrate is provided support, by described injection face and described support substrates bonding; Finally peel off from described defect layer, obtain InP Film laminated substrate.By ion implantation, the thickness of the InP film of acquisition can be regulated.Preparation method of the present invention by bonding techniques by InP film transfer on the substrate with high mechanical properties, can significantly improve the mechanical strength of InP film, the high mechanical properties InP film formed is not easily broken in processing technology and follow-up use procedure.Peel off remaining InP material can also recycle, improve the utilance of InP material, reduce InP consumables cost.Meanwhile, the density due to InP is greater than the density of support substrates, and the compound substrate of formation effectively can reduce the weight of whole device, and being more suitable for should in space device as substrate epitaxial growth for solar battery structure.
Accompanying drawing explanation
Fig. 1 is the process chart of the preparation method of InP Film laminated substrate of the present invention.
Fig. 2 is preparation method's step 1 of InP Film laminated substrate of the present invention) in the structural representation that presents.
Fig. 3 is preparation method's step 2 of InP Film laminated substrate of the present invention) in the structural representation that presents.
Fig. 4 is preparation method's step 3 of InP Film laminated substrate of the present invention) in the structural representation that presents.
Element numbers explanation
1InP substrate
11 injection faces
12InP film
13 defect layers
The clout of 14InP substrate
21 support substrates
31InP Film laminated substrate
Embodiment
Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this specification can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by embodiments different in addition, and the every details in this specification also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Refer to accompanying drawing 1 ~ Fig. 4.It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, then only the assembly relevant with the present invention is shown in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
The invention provides a kind of preparation method of bright InP Film laminated substrate, as shown in Figure 1, described preparation method at least comprises the following steps:
S1, provides InP substrate, and described InP substrate has injection face, carries out ion implantation from described injection face, forms defect layer at the predetermined depth place of described InP substrate;
S2, provides support substrate, by described injection face and described support substrates bonding;
S3, peels off from described defect layer, obtains InP Film laminated substrate.
The preparation method of InP Film laminated substrate of the present invention is introduced in detail below in conjunction with concrete accompanying drawing.
First perform step S1, refer to accompanying drawing 2, provide InP substrate 1, described InP substrate 1 has injection face 11, carries out ion implantation from described injection face 11, forms defect layer 13 at the predetermined depth place of described InP substrate 1.
Described InP substrate 1 has upper and lower two relative surfaces, wherein, using upper surface as injection face 11, carries out ion implantation, as shown in Figure 2.Exemplarily, described InP substrate 1 can select business-like InP single crystal wafers.
The ionic species described InP substrate 1 being carried out to ion implantation can be H ion or He ion, certainly, also can be other suitable ionic speciess, not limit at this.The energy injecting ion is corresponding with estimating the thickness (i.e. the degree of depth of defect layer 13) of the InP film 12 obtained, in other words, the ion energy injected is larger, form defect layer 13 darker, the thickness that follow-up stripping obtains InP film 12 is also thicker, otherwise it is more shallow then to form defect layer 13, the thickness that follow-up stripping obtains InP film 12 is also thinner.In the present embodiment, the implantation dosage of described H ion or He ion is 1E16cm
-2~ 1E18cm
-2between, the depth bounds of the defect layer 13 of formation is 10nm to 50 μm.
In addition, it should be noted that, carrying out in ion implantation process, described InP substrate 1 temperature will remain between-50 DEG C ~ 300 DEG C.Preferably, in injection process, the temperature of described InP substrate 1 can remain on less than 0 DEG C or rise between 100 to 300 DEG C by temperature, now, the ion concentration injected in InP substrate 1 in gaussian shaped profile, and can introduce crystal defect formation defect layer 13 in the material.
Then perform step S2, refer to accompanying drawing 3, provide support substrate 21, by described injection face 11 and described support substrates 21 bonding.
Described support substrates 21 can be sapphire, carborundum, diamond, gallium nitride, GaAs or glass etc.In addition, described support substrates 21 can be the crystal of above material, polycrystalline or non-crystalline material.In the present embodiment, described support substrates 21 is chosen as sapphire crystal material.
See in this step, the method for described bonding can the mode such as choice for use Direct Bonding, dielectric layer bonding, metal bonding or anode linkage.Described dielectric layer bonding comprises the methods such as somatomedin layer bonding, melten glass bonding and spin-coating glass bonding.Above bonding pattern is conventional bonding method, no longer launches to describe at this.
By above bonding method, secure bond is carried out on a surface of described injection face 11 and described support substrates 21.
Finally perform step S3, refer to accompanying drawing 4, peel off from described defect layer 13, obtain InP Film laminated substrate 31.
Can be peeled off from described defect layer 13 by the processing mode of heating anneal.The mode of described heating anneal is the compound annealing that single direct high annealing or hypo-hyperthermia combine.If use direct high annealing, then the temperature range of annealing is 200 DEG C ~ 800 DEG C, and annealing time is 10 seconds to 24 hours.Preferably, the temperature of direct high annealing is 250 DEG C ~ 600 DEG C, and annealing time is 12 little of 24 hours.
In annealing process, if directly use high annealing, the ion of injection (H or He etc.) can be made to spread, and the defect in material is combined.Meanwhile, the defect in injection process can because Oswald that effect be assembled.In annealing process, the gathering of H or He can increase the pressure of defect inside, causes the fracture of chemical bond and the increment of defect, forms the defect of flatbed, and finally cause the stripping of InP film at defect layer place.
According to the compound annealing way that hypo-hyperthermia combines, then first carry out low temperature preannealing and carry out high temperature after annealing again, wherein, the temperature range of described low temperature preannealing is room temperature to 250 DEG C, and annealing time is 1 minute to 24 hours; The temperature range of described high temperature after annealing is 200 ~ 800 DEG C, and annealing time is 10 seconds to 24 hours.Preferably, the temperature range of described high temperature after annealing is 250 ~ 600 DEG C, and annealing time is 10 seconds to 10 hours.
In annealing process, if use the compound annealing process that low temperature preannealing is combined with high temperature after annealing.Low temperature preannealing can promote H or He diffusion in the material and defect in material is combined, but this process can't cause the stripping of material.In high temperature post anneal, H or He be combined with fault in material can cause the pressure of defect inside to become rapidly large, occurs the defect of flatbed and causes the stripping of InP film.The compound annealing process that low temperature preannealing and high temperature after annealing combine, compared with direct annealing process, can shorten annealing time more.
In the present embodiment, the compound annealing way adopting hypo-hyperthermia to combine, first carries out the low temperature preannealing of 150 DEG C, annealing time 5 hours, then the high temperature after annealing carrying out 300 DEG C, anneals 1 hour.The InP Film laminated substrate 31 formed comprises support substrates 21, the InP film 12 be formed in support substrates 21.After peeling off, defect layer is very thin, is also InP material.
Also it should be noted that, after InP film 12 is transferred to support substrates 21, the clout 14 of InP substrate can recycle after treatment, namely continues to use as the InP substrate 1 in Fig. 2.
InP Film laminated substrate 31 after transfer has good mechanical performance, can utilize MBE or MOCVD method or the multi-layer quantum well structure etc. of InP Film laminated substrate 31 Epitaxial growth high mobility heterojunction, laser, detector and photovoltaic device.
In sum, the invention provides a kind of preparation method of InP Film laminated substrate, comprise step: first provide InP substrate, described InP substrate has injection face, carries out ion implantation from described injection face, forms defect layer at the predetermined depth place of described InP substrate; Then substrate is provided support, by described injection face and described support substrates bonding; Finally peel off from described defect layer, obtain InP Film laminated substrate.By ion implantation, the thickness of the InP film of acquisition can be regulated.Preparation method of the present invention by bonding techniques by InP film transfer on the substrate with high mechanical properties, can significantly improve the mechanical strength of InP film, the high mechanical properties InP film formed is not easily broken in processing technology and follow-up use procedure.Peel off remaining InP material can also recycle, improve the utilance of InP material, reduce InP consumables cost.Meanwhile, the density due to InP is greater than the density of support substrates, and the compound substrate of formation effectively can reduce the weight of whole device, and being more suitable for should in space device as substrate epitaxial growth for solar battery structure.
So the present invention effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (13)
1. a preparation method for InP Film laminated substrate, is characterized in that, described preparation method at least comprises:
1) provide InP substrate, described InP substrate has injection face, carries out ion implantation from described injection face, forms defect layer at the predetermined depth place of described InP substrate;
2) substrate is provided support, by described injection face and described support substrates bonding;
3) peel off from described defect layer, obtain InP Film laminated substrate.
2. the preparation method of InP Film laminated substrate according to claim 1, is characterized in that: described step 1) in, the ion injecting InP substrate from described injection face is H ion or He ion.
3. the preparation method of InP Film laminated substrate according to claim 1 and 2, is characterized in that: in described ion implantation process, and described InP substrate temperature remains between-50 DEG C ~ 300 DEG C.
4. the preparation method of InP Film laminated substrate according to claim 2, is characterized in that: the implantation dosage of described H ion or He ion is 1E16cm
-2~ 1E18cm
-2between.
5. the preparation method of InP Film laminated substrate according to claim 1, is characterized in that: described step 1) in, the depth bounds forming defect layer in ion implantation InP substrate is 10nm to 50 μm.
6. the preparation method of InP Film laminated substrate according to claim 1, is characterized in that: described step 2) in, described support substrates is silicon, sapphire, carborundum, diamond, gallium nitride, GaAs or glass.
7. the preparation method of InP Film laminated substrate according to claim 6, is characterized in that: described support substrates is crystal, polycrystalline or non-crystalline material.
8. the preparation method of InP Film laminated substrate according to claim 1, is characterized in that: described step 2) in, the method for bonding is Direct Bonding, dielectric layer bonding, metal bonding or anode linkage.
9. the preparation method of InP Film laminated substrate according to claim 8, is characterized in that: described dielectric layer bonding is growth dielectric layer bonding, polymer-bound, melten glass bonding or spin-coating glass bonding.
10. the preparation method of InP Film laminated substrate according to claim 1, is characterized in that: described step 3) in, by the mode of heating anneal, InP substrate material is peeled off from described defect layer.
The preparation method of 11. InP Film laminated substrates according to claim 10, is characterized in that: described heating anneal is direct high annealing or hypo-hyperthermia annealing.
The preparation method of 12. InP Film laminated substrates according to claim 11, is characterized in that: adopt the temperature range of described direct high annealing to be 200 DEG C ~ 800 DEG C, annealing time is 10 seconds to 24 hours.
The preparation method of 13. InP Film laminated substrates according to claim 11, it is characterized in that: adopt described hypo-hyperthermia annealing way for first carrying out low temperature preannealing carries out high temperature after annealing again, wherein, the temperature range of described low temperature preannealing is room temperature to 250 DEG C, and annealing time is 1 minute to 24 hours; The temperature range of described high temperature after annealing is 200 ~ 800 DEG C, and annealing time is 10 seconds to 24 hours.
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| CN106653583A (en) * | 2016-11-11 | 2017-05-10 | 中国科学院上海微系统与信息技术研究所 | Preparation method of large-size III-V heterogeneous substrate |
| CN106711027A (en) * | 2017-02-13 | 2017-05-24 | 中国科学院上海微系统与信息技术研究所 | Wafer bonding method and preparation method for foreign substrate |
| CN106711026A (en) * | 2017-02-09 | 2017-05-24 | 中国科学院上海微系统与信息技术研究所 | Method for preparing InP thin film heterogeneous substrate |
| CN111146681A (en) * | 2019-12-19 | 2020-05-12 | 中国科学院上海微系统与信息技术研究所 | SiC-based InP photonic integrated module and preparation method thereof |
| WO2020098401A1 (en) * | 2018-11-15 | 2020-05-22 | 中国科学院上海微系统与信息技术研究所 | Gallium oxide semiconductor structure and preparation method therefor |
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| CN112951713A (en) * | 2021-02-07 | 2021-06-11 | 长春长光圆辰微电子技术有限公司 | Processing method of small-size wafer |
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| CN111146681A (en) * | 2019-12-19 | 2020-05-12 | 中国科学院上海微系统与信息技术研究所 | SiC-based InP photonic integrated module and preparation method thereof |
| CN111146681B (en) * | 2019-12-19 | 2022-03-15 | 中国科学院上海微系统与信息技术研究所 | SiC-based InP photonic integrated module and preparation method thereof |
| CN111262127A (en) * | 2020-02-04 | 2020-06-09 | 中国科学院上海微系统与信息技术研究所 | Preparation method of silicon-based InGaAs laser substrate, substrate and laser |
| CN111262127B (en) * | 2020-02-04 | 2022-06-10 | 中国科学院上海微系统与信息技术研究所 | Preparation method of silicon-based InGaAs laser substrate, substrate and laser |
| CN111883649A (en) * | 2020-07-23 | 2020-11-03 | 中国科学院上海微系统与信息技术研究所 | Thin film structure on heterogeneous substrate and preparation method thereof |
| CN111883649B (en) * | 2020-07-23 | 2021-04-27 | 中国科学院上海微系统与信息技术研究所 | Thin film structure on heterogeneous substrate and preparation method thereof |
| CN112951713A (en) * | 2021-02-07 | 2021-06-11 | 长春长光圆辰微电子技术有限公司 | Processing method of small-size wafer |
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