CN1684275A - Thin film material for sunlight blind area ultraviolet detector and its producing method - Google Patents
Thin film material for sunlight blind area ultraviolet detector and its producing method Download PDFInfo
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- CN1684275A CN1684275A CN 200510049139 CN200510049139A CN1684275A CN 1684275 A CN1684275 A CN 1684275A CN 200510049139 CN200510049139 CN 200510049139 CN 200510049139 A CN200510049139 A CN 200510049139A CN 1684275 A CN1684275 A CN 1684275A
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- film material
- substrate
- colloidal sol
- acetate
- thin
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- 239000000463 material Substances 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 19
- 239000010409 thin film Substances 0.000 title claims description 23
- 239000000758 substrate Substances 0.000 claims abstract description 20
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims abstract description 10
- UEGPKNKPLBYCNK-UHFFFAOYSA-L magnesium acetate Chemical compound [Mg+2].CC([O-])=O.CC([O-])=O UEGPKNKPLBYCNK-UHFFFAOYSA-L 0.000 claims abstract description 9
- 229960000583 acetic acid Drugs 0.000 claims abstract description 5
- 238000001816 cooling Methods 0.000 claims abstract description 5
- 239000012362 glacial acetic acid Substances 0.000 claims abstract description 5
- 238000004528 spin coating Methods 0.000 claims abstract description 5
- 239000003054 catalyst Substances 0.000 claims abstract description 3
- 239000002904 solvent Substances 0.000 claims abstract description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000011654 magnesium acetate Substances 0.000 claims description 7
- 229940069446 magnesium acetate Drugs 0.000 claims description 7
- 235000011285 magnesium acetate Nutrition 0.000 claims description 7
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 claims description 5
- 229940078494 nickel acetate Drugs 0.000 claims description 5
- CROLBRYGLOVQCD-UHFFFAOYSA-N 6-methoxyhexan-1-ol Chemical compound COCCCCCCO CROLBRYGLOVQCD-UHFFFAOYSA-N 0.000 claims description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 4
- 230000032683 aging Effects 0.000 claims description 4
- BXNFVPMHMPQBRO-UHFFFAOYSA-N magnesium nickel(2+) oxygen(2-) Chemical compound [O--].[O--].[Mg++].[Ni++] BXNFVPMHMPQBRO-UHFFFAOYSA-N 0.000 claims description 4
- XMOKRCSXICGIDD-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O XMOKRCSXICGIDD-UHFFFAOYSA-N 0.000 claims description 2
- 238000003756 stirring Methods 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 230000029087 digestion Effects 0.000 abstract 1
- 238000001035 drying Methods 0.000 abstract 1
- WJJAQJDRYDOYLK-UHFFFAOYSA-N hexane-1,1-diol;methoxymethane Chemical compound COC.CCCCCC(O)O WJJAQJDRYDOYLK-UHFFFAOYSA-N 0.000 abstract 1
- 239000011777 magnesium Substances 0.000 description 9
- 239000000126 substance Substances 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000680 avirulence Effects 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical group [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
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Abstract
A film material used in a solar blind zone UV detector characterizes that the formula of said film material is Nil-xMgxO and said material is manufactured by the following technology steps: 1, according to the atomic ratio of Mg/Ni in the formula, Mg acetate and Ni acetate in the formula, Mg acetate and Ni acetate in the weight ratio of 1:1.27-1:4.63 are put in a container to be mixed for 50-70minutes under 60deg.C taking hexanediol methyl oxide as the solvent, glacial acetic acid as the catalyst to get a uniform transparent green sol after 24 hours digestion. 2, coating a layer of sol on the substrate with the pulling method or spin coating method, 3, drying the substrate coated with the sol under 80deg.C, heat-processing it for 1-2h under 500deg.C, then processing it under 900-1100deg.C, for 2-6h and cooling it naturally to get the necessary film material.
Description
Technical field
The present invention relates to a kind of thin-film material, particularly thin-film material and the manufacture method thereof used of a kind of day blind region ultraviolet detector device.
Background technology
Along with the development of spectral technique, the people's attention focus shifts to the short wavelength gradually, and wherein, the spectrum that wavelength is in 240～280nm scope is a special region.Because atmosphere is to the absorption of sunlight, the light in 240～280nm scope is absorbed and can't arrives earth surface, do not have the light in this wave band near the sunlight the earth surface, so this wave band is called as a day blind area.Because day blind region ultraviolet detector device is insensitive to sunlight, can be under the situation that not influenced by sunlight, survey the wake flame that aircraft from the enemy, guided missile etc. send, also can be used for fire alarm, the aspects such as online detection of ultraviolet communication, high-tension line.
At present, the thin-film material that day blind region ultraviolet detector device is used mainly is aluminum gallium nitride (GaAlN) system, this material require adopts film preparing technologies such as metal organic chemical vapor deposition, molecular beam epitaxy, exist raw material and equipment very expensive, complex manufacturing technology, the cost height, defective such as organic source toxicity is big.
Summary of the invention
The purpose of this invention is to provide thin-film material and manufacture method thereof that a kind of day blind region ultraviolet detector device used, the optical energy gap of the thin-film material of making is 5eV, corresponding ABSORPTION EDGE wavelength is 245～255nm, this thin-film material is very little to the response of sunlight, and it is sensitive especially to the response of the ultraviolet light of same optical power density, this thin-film material manufacturing process is simple, avirulence, and cost is low.
The thin-film material that a kind of day blind region ultraviolet detector device used, it is characterized in that: this thin-film material is the nickel magnesium oxide, its molecular formula is Ni
1-XMg
XO, 0.2≤X in the formula≤0.3.
A kind of method of making above-mentioned material is characterized in that adopting following process steps:
A) according to molecular formula Ni
1-XMg
XThe scope of O and X is 0.2～0.3, the scope of corresponding magnesium/nickle atom ratio is 1: 4～1: 2.33, the magnesium acetate of corresponding above-mentioned atomic ratio and the weight ratio of nickel acetate are 1: 2.7～1: 4.63, raw acetic acid nickel and magnesium acetate are put into container by required proportioning, hexylene glycol methyl ether with 1 unit volume is a solvent, is catalyst with the glacial acetic acid of 0.05～0.1 unit volume, stirs 50～70 minutes down at 60 ℃, place ageing 24 hours, obtain the green colloidal sol of homogeneous transparent;
B) clean substrate is immersed in the colloidal sol, on substrate, be coated with last layer colloidal sol, perhaps adopt spin-coating method on substrate, to be coated with last layer colloidal sol with czochralski method;
C) the substrate that scribbles colloidal sol 80 ℃ of down oven dry 30～40 minutes, 500 ℃ of following heat treatments 1～2 hour, at 900～1100 ℃ of following high-temperature heat treatment natural cooling after 2～6 hours, obtain required thin-film material again.
There is a kind of in the silicon chip of thick oxygen silicon on substrate adopting quartz glass, sapphire and surface, and the chemical formula of nickel acetate is Ni (Ac)
24H
2O, the chemical formula of magnesium acetate are Mg (Ac)
24H
2O.
With prior art relatively, outstanding advantage of the present invention is: this thin-film material manufacturing process is simple especially, avirulence, and cost is low, is ideal a kind of in the thin-film material that uses of day blind region ultraviolet detector device.
Description of drawings
Fig. 1 is to through 2 hours nickel magnesium oxide Ni of 1000 ℃ of following heat treatments
0.7Mg
0.3The energy gap test result of O film, ordinate wherein are absorption coefficient and photon energy long-pending square, and abscissa is eV.As seen its energy gap is 5eV, and corresponding ABSORPTION EDGE wavelength is
Be positioned at solar blind
Fig. 2 is nickel magnesium oxide film Ni
0.8Mg
0.2O is to the photoconductive response curve of sunlight A and 254nm ultraviolet light B, and abscissa is time (second), and ordinate is normalization photoconduction (arbitrary unit).As seen this film is very little to the response of sunlight, and the ultraviolet light of same optical power density is had very high response.
Embodiment
Embodiment 1:
The thin-film material that a kind of day blind region ultraviolet detector device used, its molecular formula is Ni
0.7Mg
0.3O, i.e. x=0.3.Adopt following process steps: A) according to molecular formula Ni
0.7Mg
0.3Magnesium among the O/nickle atom ratio is put into glass container with 2g magnesium acetate and 5.5g nickel acetate, adds the chemical pure hexylene glycol methyl ether of 100ml then, add the chemical pure glacial acetic acid of 5ml again, stirred 70 minutes down at 60 ℃, place ageing 24 hours, obtain the green colloidal sol of homogeneous transparent; B) adopt spin-coating method on substrate, to be coated with last layer colloidal sol; C) the substrate that scribbles colloidal sol 80 ℃ of down oven dry 40 minutes, 500 ℃ of following heat treatments 2 hours, at 900 ℃ of following high-temperature heat treatment natural cooling after 6 hours, obtain required thin-film material again.When adopting spin-coating method to be coated with last layer colloidal sol on substrate, its rotary speed is 3000rpm, and substrate is a quartz glass plate.The energy gap of this thin-film material is shown in Fig. 1.
Embodiment 2:
The thin-film material that a kind of day blind region ultraviolet detector device used, its molecular formula is Ni
0.8Mg
0.2O, promptly x=0.2 adopts following process steps: A) according to molecular formula Ni
0.8Mg
0.2Magnesium among the O/nickle atom ratio is put into glassware with 1g magnesium acetate and 4.63g nickel acetate, adds the chemical pure hexylene glycol methyl ether of 100ml then, and the chemical pure glacial acetic acid of 10ml, stirred 50 minutes down at 60 ℃, place ageing 24 hours, obtain the green colloidal sol of homogeneous transparent; B) clean substrate is immersed in the colloidal sol, on substrate, be coated with last layer colloidal sol with czochralski method; C) the substrate that scribbles colloidal sol 80 ℃ of down oven dry 30 minutes, 500 ℃ of following heat treatments 1 hour, at 1100 ℃ of following high-temperature heat treatment natural cooling after 2 hours, obtain required thin-film material again.When adopting czochralski method to be coated with last layer colloidal sol on substrate, its pull rate is that per minute lifts 10 centimetres, and substrate is a sapphire sheet.The photoconductive response curve to sunlight A and 254nm ultraviolet light B of this thin-film material is shown in Fig. 2.
Claims (2)
- One kind day the thin-film material used of blind region ultraviolet detector device, it is characterized in that: this thin-film material is the nickel magnesium oxide, its molecular formula is Ni 1-XMg XO, 0.2≤X in the formula≤0.3.
- 2. method of making the described material of claim 1 is characterized in that adopting following process steps:A) according to molecular formula Ni 1-XMg XThe scope of O and X is 0.2～0.3, the scope of corresponding magnesium/nickle atom ratio is 1: 4～1: 2.33, the magnesium acetate of corresponding above-mentioned atomic ratio and the weight ratio of nickel acetate are 1: 2.7～1: 4.63, raw acetic acid nickel and magnesium acetate are put into container in required ratio, hexylene glycol methyl ether with 1 unit volume is a solvent, and the glacial acetic acid of 0.05～0.1 unit volume is a catalyst, stirs 50～70 minutes down at 60 ℃, place ageing 24 hours, obtain the green colloidal sol of homogeneous transparent;B) clean substrate is immersed in the colloidal sol, on substrate, be coated with last layer colloidal sol, perhaps adopt spin-coating method on substrate, to be coated with last layer colloidal sol with czochralski method;C) the substrate that scribbles colloidal sol 80 ℃ of down oven dry 30～40 minutes, 500 ℃ of following heat treatments 1～2 hour, at 900～1100 ℃ of following high-temperature heat treatment natural cooling after 2～6 hours, obtain required thin-film material again.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100491396A CN100358159C (en) | 2005-02-28 | 2005-02-28 | Thin film material for sunlight blind area ultraviolet detector and its producing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100491396A CN100358159C (en) | 2005-02-28 | 2005-02-28 | Thin film material for sunlight blind area ultraviolet detector and its producing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1684275A true CN1684275A (en) | 2005-10-19 |
| CN100358159C CN100358159C (en) | 2007-12-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100491396A Expired - Fee Related CN100358159C (en) | 2005-02-28 | 2005-02-28 | Thin film material for sunlight blind area ultraviolet detector and its producing method |
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| Country | Link |
|---|---|
| CN (1) | CN100358159C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101621066B (en) * | 2008-07-02 | 2011-06-01 | 中国科学院半导体研究所 | GaN-based solar-blind UV detector area array and manufacturing method thereof |
| CN103337590A (en) * | 2013-05-30 | 2013-10-02 | 浙江大学 | Highly responsive organic solar blind type ultraviolet detector |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9928727B2 (en) | 2015-07-28 | 2018-03-27 | Carrier Corporation | Flame detectors |
| US10126165B2 (en) | 2015-07-28 | 2018-11-13 | Carrier Corporation | Radiation sensors |
| US9806125B2 (en) | 2015-07-28 | 2017-10-31 | Carrier Corporation | Compositionally graded photodetectors |
| US9865766B2 (en) | 2015-07-28 | 2018-01-09 | Carrier Corporation | Ultraviolet photodetectors and methods of making ultraviolet photodetectors |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002080823A (en) * | 2000-09-08 | 2002-03-22 | Kinya Adachi | Ultraviolet ray insulating agent |
| JP4188672B2 (en) * | 2002-05-31 | 2008-11-26 | 篠田プラズマ株式会社 | Photochromic body, photochromic material and method for producing the same |
-
2005
- 2005-02-28 CN CNB2005100491396A patent/CN100358159C/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101621066B (en) * | 2008-07-02 | 2011-06-01 | 中国科学院半导体研究所 | GaN-based solar-blind UV detector area array and manufacturing method thereof |
| CN103337590A (en) * | 2013-05-30 | 2013-10-02 | 浙江大学 | Highly responsive organic solar blind type ultraviolet detector |
| CN103337590B (en) * | 2013-05-30 | 2015-12-09 | 浙江大学 | High-responsivity organic solar blind type ultraviolet detector |
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| Publication number | Publication date |
|---|---|
| CN100358159C (en) | 2007-12-26 |
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Granted publication date: 20071226 Termination date: 20100228 |